JPH0244633A - Flash high-speed atomic beam source - Google Patents
Flash high-speed atomic beam sourceInfo
- Publication number
- JPH0244633A JPH0244633A JP63193731A JP19373188A JPH0244633A JP H0244633 A JPH0244633 A JP H0244633A JP 63193731 A JP63193731 A JP 63193731A JP 19373188 A JP19373188 A JP 19373188A JP H0244633 A JPH0244633 A JP H0244633A
- Authority
- JP
- Japan
- Prior art keywords
- anode
- cathode
- gas
- atomic beam
- capacitor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000003990 capacitor Substances 0.000 claims abstract description 23
- 230000007246 mechanism Effects 0.000 claims description 3
- 239000007789 gas Substances 0.000 abstract description 36
- -1 oxygen ions Chemical class 0.000 abstract description 20
- 239000001301 oxygen Substances 0.000 abstract description 9
- 229910052760 oxygen Inorganic materials 0.000 abstract description 9
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 abstract description 7
- 229910001882 dioxygen Inorganic materials 0.000 abstract description 7
- 238000010884 ion-beam technique Methods 0.000 abstract description 6
- 230000000694 effects Effects 0.000 abstract description 4
- 230000005611 electricity Effects 0.000 abstract description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical group [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 31
- 229910052786 argon Inorganic materials 0.000 description 20
- 125000004429 atom Chemical group 0.000 description 9
- 238000010586 diagram Methods 0.000 description 7
- 238000004458 analytical method Methods 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 230000007935 neutral effect Effects 0.000 description 5
- 239000012212 insulator Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000000992 sputter etching Methods 0.000 description 3
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000000087 stabilizing effect Effects 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000008685 targeting Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Particle Accelerators (AREA)
- Electron Sources, Ion Sources (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、半導体、金属、絶縁物から構成され４Ｌｓ
［用材料に電子素子パターンをスパッタエツチングで作
製する場合や、絶縁物の組成分析を行う場合等に使用さ
れるビームとして好適である収束性が高くかつ高出力な
高速原子線をパルス的に発生させるフラッシュ高速原子
線源に関するものである。[Detailed Description of the Invention] [Industrial Application Field] The present invention is a 4Ls
[Generates a high-speed atomic beam with high convergence and high output in a pulsed manner, which is suitable as a beam used when creating electronic device patterns on materials by sputter etching or when analyzing the composition of insulators. This relates to a flash fast atomic beam source.
［従来の技術］
常温の大気中で熱運動している原子は、概ね０．０５ｅ
Ｖ（電子ボルト）前後の運動エネルギーを有している。[Prior art] Atoms in thermal motion in the atmosphere at room temperature are approximately 0.05e
It has a kinetic energy of around V (electron volt).
これに比べて遥かに大きな運動エネルギーで飛翔する原
子１分子を総称して「高速原子」と呼び、それが一方向
にビーム状に流れる場合に「高速原子線」と言う。A single atom molecule that flies with far greater kinetic energy is collectively called a "high-speed atom," and when it flows in a beam in one direction, it is called a "high-speed atomic beam."
半導体、金属、絶縁物から構成されるＬＳＩ用材料に、
電子素子パターンをスパッタエツチングで作製する場合
や、絶縁物の組成分析を行う時に、これまではイオンビ
ームを用いていたが、イオンの電荷が絶縁物表面に帯電
して、加工や分析の妨害となっていた。しかし、イオン
ビームの替わりに、電荷を有しない高速原子線を用いれ
ば、帯電に起因するトラブルが回避され、加工精度や分
析の信頼性の向上が期待される。そこで従来より、この
ような用途に好適なビームとして収束性が高くかつ高出
力な高速原子線源が求められていた。For LSI materials composed of semiconductors, metals, and insulators,
Until now, ion beams have been used to fabricate electronic device patterns by sputter etching or to analyze the composition of insulators, but the ions charge the surface of the insulator, which can interfere with processing and analysis. It had become. However, if an uncharged high-speed atomic beam is used instead of an ion beam, troubles caused by charging can be avoided, and it is expected that processing accuracy and analysis reliability will be improved. Therefore, there has been a demand for a high-speed atomic beam source with high convergence and high output as a beam suitable for such uses.
従来発表されている、気体原子の高速原子線を発生ずる
高速原子線源のうち、運動エネルギーが０．５〜１０ｋ
ｅＶのアルゴン原子を放射する高速原子線源の一例を第
４図に示す。図中、１は円筒形の陰極、２はドーナッツ
状の陽極、３は０゜５〜ｌ０ｋｅＶの直流高圧電源、４
はガスノズル、５はアルゴンガス、６はプラズマ、７は
高速原子線の放出孔、８は高速原子線、９は放電安定抵
抗である。Among the previously announced high-speed atomic beam sources that generate high-speed atomic beams of gas atoms, those with kinetic energy of 0.5 to 10 k
An example of a fast atomic beam source that emits eV argon atoms is shown in FIG. In the figure, 1 is a cylindrical cathode, 2 is a donut-shaped anode, 3 is a 0°5 to 10 keV DC high voltage power supply, and 4 is a cylindrical cathode.
5 is a gas nozzle, 5 is an argon gas, 6 is a plasma, 7 is a high-speed atomic beam discharge hole, 8 is a high-speed atomic beam, and 9 is a discharge stabilizing resistor.
この従来例の動作は次のとうりである。直流高圧電源３
、放電安定抵抗９以外の構成要素を真空容器に入れ十分
に排気した後、ガスノズル４からアルゴンガス５を円筒
形陰極１の内部に注入する。The operation of this conventional example is as follows. DC high voltage power supply 3
After the components other than the discharge stabilizing resistor 9 are placed in a vacuum container and sufficiently evacuated, argon gas 5 is injected into the cylindrical cathode 1 from the gas nozzle 4.
ここで直流高圧電源３によって、陽極２が正電位、陰極
ｌが負電位となるように、直流高電圧を印加する。これ
で陰［！１・陽極２間にグロー放電が起き、プラズマ６
が発生し、アルゴンイオンと電子が生成される。さらに
この放電において、円筒形陰極ｌの底面１ａから放出す
る電子は、陽極２に向かって加速され、陽極２の中央の
孔を通過して、円筒形陰極ｌの反対側の底面ｔｂに達し
、ここで速度を失って反転し、あらためて陽極２に向か
って加速され始める。このように電子は陽極２の中央の
孔を介して、円筒形陰極ｌの両方の底面１ａ。Here, a DC high voltage is applied by the DC high voltage power supply 3 so that the anode 2 has a positive potential and the cathode 1 has a negative potential. This is a shade [! Glow discharge occurs between 1 and anode 2, and plasma 6
occurs, and argon ions and electrons are generated. Further, in this discharge, electrons emitted from the bottom surface 1a of the cylindrical cathode l are accelerated toward the anode 2, pass through the central hole of the anode 2, and reach the bottom surface tb on the opposite side of the cylindrical cathode l. Here, it loses speed, reverses, and begins to accelerate toward the anode 2 again. In this way, electrons pass through the central hole of the anode 2 to both bottom surfaces 1a of the cylindrical cathode l.
１ｂの間を高周波振動し、その間にアルゴンガスに衝突
して、多数のアルゴンイオンを生成する。1b, and collides with argon gas during that time to generate a large number of argon ions.
こうして発生したアルゴンイオンは、円筒形陰極ｌの底
面に向かって加速され、十分な運動エネルギーを得るに
到る。この運動エネルギーは、陽極２・陰極１間の放電
維持電圧が、例えば１ｋＶのときは１ｋｅＶ程度の値と
なる。円筒形陰極ｌの底面近傍の空間で、アルゴンイオ
ンは残留しているアルゴンガスと接触して電荷を失い中
性のアルゴン原、子に戻る。また、円筒形陰極ｌの底面
近傍の空間は高周波振動をする電子の折り返し点であっ
て、低エネルギーの電子が多数存在する空間であり、こ
の空間に入射したアルゴンイオンは電子と再結合してア
ルゴン原子に戻る。前述のアルゴンイオンとアルゴンガ
スの接触は、アルゴンイオンの運動エネルギーが大幅に
変わってしまう程激しいものではないので、アルゴンイ
オンの運動エネルギーがそのまま中性のアルゴン原子に
受は継がれて、高速の原子線が誕生する。また、アルゴ
ンイオンと電子の衝突においても、電子の質量がアルゴ
ンイオンに比べて無視できる程に小さいために、アルゴ
ンイオンの運動エネルギーは殆ど損失せずにそのままア
ルゴン原子に受は継がれて、アルゴン原子は高速原子と
なる。したがって、この場合の高速原子の運動エネルギ
ーは、１ｋｅＶ程度となるのである。このようにして発
生した高速原子は、円筒形陰極ｌの一方の底面ｔｂに穿
たれた放出孔７から高速原子線８となって放出される。The argon ions thus generated are accelerated toward the bottom surface of the cylindrical cathode 1 and acquire sufficient kinetic energy. This kinetic energy has a value of about 1 keV when the discharge sustaining voltage between the anode 2 and the cathode 1 is, for example, 1 kV. In the space near the bottom of the cylindrical cathode l, the argon ions come into contact with the remaining argon gas, lose their charge, and return to neutral argon atoms and atoms. In addition, the space near the bottom of the cylindrical cathode l is a turning point for high-frequency oscillating electrons, and is a space where many low-energy electrons exist, and argon ions that enter this space recombine with electrons. Return to the argon atom. The contact between the argon ions and the argon gas mentioned above is not so intense that the kinetic energy of the argon ions changes significantly, so the kinetic energy of the argon ions is transferred directly to the neutral argon atoms, resulting in a high-speed Atomic rays are born. Also, in the collision between argon ions and electrons, the mass of the electrons is negligibly small compared to the argon ions, so the kinetic energy of the argon ions is transferred to the argon atoms without any loss, and the argon atoms Atoms become fast atoms. Therefore, the kinetic energy of the fast atoms in this case is about 1 keV. The fast atoms generated in this manner are emitted as a fast atomic beam 8 from an ejection hole 7 formed in one bottom surface tb of the cylindrical cathode l.
［発明が解決しようとする課題］
しかしながら、上記従来の技術における高速原子線源で
は、プラズマ６が円筒形陰極ｌの内部いっばいに広がっ
てしまうために、陽極２から放出孔７に向かうアルゴン
イオンを収束することが困難であり、従って高速原子線
８の収束性は劣り、また、放電電流も最大ＩＡ程度であ
って、高出力ビームの放出には適さなかった。[Problems to be Solved by the Invention] However, in the conventional fast atomic beam source described above, since the plasma 6 spreads all over the inside of the cylindrical cathode 1, argon ions traveling from the anode 2 toward the emission hole 7 Therefore, the convergence of the high-speed atomic beam 8 was poor, and the maximum discharge current was about IA, making it unsuitable for emitting a high-power beam.
本発明は、上記問題点を解決するために創案されたもの
で、微小領域の加工や分析に用いるのに好適な収束性が
高くかつ高出力な高速原子線源を発生することのできる
フラッシュ高速原子線源を提供することを目的とする。The present invention was devised to solve the above problems, and is a flash high-speed atomic beam source capable of generating a high-speed atomic beam source with high convergence and high output suitable for use in processing and analysis of microscopic areas. The purpose is to provide an atomic radiation source.
［課題を解決するための手段］
上記の目的を達成するための本発明のフラッシュ高速原
子線源の一つの構成は、
真空中において陽極とこれに対向して配置した高速原子
線の通過する開口部を有する筒形の陰極と、この筒形の
陰極の内部にガスを注入するガスノズルと、直流高電圧
電源から充電されるコンデンサと、このコンデンサと直
列に上記陽極と陰極の間に接続されオンにすることによ
り上記ガスに放電を生じさせるスイッチ手段とを備え、
上記放電により上記高速原子線を得ることを特徴とする
。[Means for Solving the Problems] One configuration of the flash fast atomic beam source of the present invention to achieve the above object is as follows: an anode and an aperture through which the fast atomic beam passes, which is disposed opposite to the anode in vacuum. A cylindrical cathode having a section, a gas nozzle for injecting gas into the cylindrical cathode, a capacitor charged from a DC high voltage power supply, and a capacitor connected in series between the anode and cathode to turn on the capacitor. switch means for causing discharge in the gas by causing the gas to discharge;
The method is characterized in that the high-speed atomic beam is obtained by the discharge.
また、他の構成としては、
真空中において陽極とこれに対向して配置した高速原子
線の通過する開口部を有する筒形の陰極と、高速で開閉
するパルプを有し上記筒形の陰極の内部にガスをパルス
的に注入するガスノズルと、上記陽極と陰極の間に接続
され直流高圧電源から充電されるとともに上記ガスに放
電を生じさせるコンデンサとを備え、上記放電により上
記高速原子線を得ることを特徴とする。In addition, other configurations include an anode in a vacuum, a cylindrical cathode having an opening through which a high-speed atomic beam passes, placed opposite the anode, and a cylindrical cathode having a pulp that opens and closes at high speed. A gas nozzle that injects gas into the interior in a pulsed manner, and a capacitor that is connected between the anode and the cathode and is charged from a DC high voltage power source and causes discharge in the gas, and the high-speed atomic beam is obtained by the discharge. It is characterized by
［作用］
本発明は、陰極に注入したガスにスイッチ手段によりま
たはパルス的に注入した上記のガスにより、コンデンサ
に充電した直流高電圧で放電を生じさせ、そのコンデン
サの作用によって極めて大きな放電電流を流して大量の
イオンを発生させる。[Function] The present invention causes a discharge at a high DC voltage charged in a capacitor by using the above-mentioned gas injected into the cathode by a switch means or injected in a pulsed manner, and an extremely large discharge current is generated by the action of the capacitor. It flows and generates a large amount of ions.
このイオンは、陰極に向けて加速され、ガスと接触して
電荷を失に中性の高速原子線となるが、上記イオンの大
量発生が高速原子線を高出力化する。These ions are accelerated toward the cathode, lose their charge upon contact with the gas, and become a neutral high-speed atomic beam, but the generation of a large amount of the ions increases the output of the high-speed atomic beam.
また、放Ｎ電流は極めて大きいためにピンチ効果て細く
しぼられる結果、陰極に向かうイオンが強く収束され、
従って高速原子線も高い収束性を持つようになる。In addition, since the discharged N current is extremely large, it is narrowed down by the pinch effect, and as a result, ions heading toward the cathode are strongly focused.
Therefore, high-speed atomic beams also have high convergence.
［実施例コ
以下、本発明の実施例を図面に基づいて詳細に説明する
。[Embodiments] Hereinafter, embodiments of the present invention will be described in detail based on the drawings.
第１図は本発明の第１の実施例を示す斜視的な構成図で
ある。図中、１１は針状の陽極、１２は円筒形の端面に
高速原子の通過する開口部を設は陽極１１にその開口部
を対向させて配置した陰極、１３は高耐圧の例えば１μ
Ｆ程度のコンデンサ、１４は例えば出力が３０ｋＶ程度
でありコンデンサ１３を充電するだめの直流高電圧電源
、１５は充電電流を限流するための高抵抗、１６は円筒
形の陰極１２の内部にガスを注入するガスノズル、１７
はコンデンサ１３と直列に接続されて陽極１１と陰極１
２の間に接続されるスイッチ、１８は陽極１１と陰極１
２およびガスノズル１６等を収容し図示省略の真空ポン
プ等で排気される真空容器、１９はスイッチ１７の操作
によりガスに生ずる放電で発生する高速原子線である。FIG. 1 is a perspective configuration diagram showing a first embodiment of the present invention. In the figure, 11 is a needle-shaped anode, 12 is a cathode having a cylindrical end face with an opening through which high-speed atoms pass, and is arranged with the opening facing the anode 11. 13 is a high-voltage cathode, for example, 1 μm.
14 is a DC high voltage power supply with an output of about 30 kV for charging the capacitor 13, 15 is a high resistance for limiting the charging current, and 16 is a gas inside the cylindrical cathode 12. gas nozzle for injecting, 17
is connected in series with the capacitor 13 to form the anode 11 and the cathode 1.
A switch 18 is connected between the anode 11 and the cathode 1.
2 and a vacuum container which accommodates a gas nozzle 16 and the like and is evacuated by a vacuum pump (not shown), and 19 is a high-speed atomic beam generated by a discharge generated in the gas by operating a switch 17.
以上のように構成した第１の実施例の作用を述べる。ま
ず、真空容器１８を充分に排気し、ガスノズル１６から
、例えば酸素ガスを円筒形の陰極１２の内部に注入する
。またコンデンサ１３は容量が例えばｌμＦであり、高
抵抗１５を介して直流高電圧電源１４によって例えば３
０ｋＶの高電圧に充電されている。円筒形の陰極１２の
内部に注入された酸素ガスは拡散して陽極１１・陰極１
２間に充満する。この状態でスイッチ１７をＯＮ（オン
）にすると、陽極１１と陰極１２の間に放電が生じ、プ
ラズマが発生する。スイッチ１７、陰極１２、陽極１１
およびこれらを繋ぐ結線を含めたインダクタンスは、数
〜数１０μＨであるから、コンデンサ１３に充電されて
いる電気！（３０ｋＶＸｌμＦ＝０．０３Ｇ）は数μｓ
ｅｃで放電し尽くす。よってプラズマの接続時間もこの
程度であり、放電発生時の最大放電電流は数１０〜数１
００ｋＡに達し、プラズマに注入されるエネルギーは、
瞬間的にではあるが、数１００ＭＷに達する。従って、
プラズマの密度は極めて高く、温度ら高温となり、大量
の酸素イオンが発生する。The operation of the first embodiment configured as above will be described. First, the vacuum container 18 is sufficiently evacuated, and, for example, oxygen gas is injected into the cylindrical cathode 12 from the gas nozzle 16. Further, the capacitor 13 has a capacitance of, for example, 1 μF, and is connected to a DC high voltage power supply 14 via a high resistance 15, for example, 3 μF.
It is charged to a high voltage of 0kV. Oxygen gas injected into the cylindrical cathode 12 diffuses into the anode 11 and cathode 1.
It fills up between 2. When the switch 17 is turned ON in this state, a discharge occurs between the anode 11 and the cathode 12, and plasma is generated. switch 17, cathode 12, anode 11
Since the inductance including the wiring connecting these is several to several tens of μH, the electricity charged in the capacitor 13! (30kVXlμF=0.03G) is several μs
Discharge completely with EC. Therefore, the connection time of the plasma is about this level, and the maximum discharge current when a discharge occurs is several tens to several tens.
The energy injected into the plasma reaches 00kA,
Although it is instantaneous, it reaches several 100 MW. Therefore,
The density of plasma is extremely high, the temperature is high, and a large amount of oxygen ions are generated.
放電電流が極めて大であるので、ピンチ効果によって′
電流は非常に細くしぼられ、そのため発生するイオンビ
ームも強く収束される。酸素イオンは陰極１２に向かっ
て加速されて、陰極１２゛の円筒の内部に入射し、酸素
ガスと接続して電荷を失い中性の酸素原子にもどる。酸
素ガスはガスノズル１６から円筒形の陰極１２に注入さ
れるから、その円筒の内部は他よりガス圧が高く、酸素
イオンと酸素ガスの接触の効率が高い。酸素イオンと酸
素ガスの接触は、酸素イオンの運動エネルギーが大幅に
変わってしまう程厳しいものではないので、酸素イオン
の運動エネルギーがそのまま中性の酸素原子に受は継が
れて、収束性の高い酸素高速原子線１９が誕生し、円筒
形の陰極１２の開口部から外に放出される。コンデンサ
１３に充電されている電気量が放電し尽くすと、プラズ
マは消失し、高速原子線の放出も止む。ここで再びコン
デンサ１３が充電され、次のスイッチ１７のＯＮによっ
て、またプラズマが発生し、高速原子線１９が再び放出
される。このようにして収束性が高く、かつ大量の酸素
イオンが発生することから高出力の高速原子線がパルス
的に繰り返し得られる。なお、ガスノズル１６から注入
するガスが例えばアルゴンの時には、アルゴン高速原子
線が発生することになる。Since the discharge current is extremely large, the pinch effect causes
The current is narrowed down very narrowly, so the generated ion beam is also strongly focused. The oxygen ions are accelerated toward the cathode 12, enter the inside of the cylinder of the cathode 12, connect with oxygen gas, lose charge, and return to neutral oxygen atoms. Since oxygen gas is injected into the cylindrical cathode 12 from the gas nozzle 16, the gas pressure inside the cylinder is higher than elsewhere, and the efficiency of contact between oxygen ions and oxygen gas is high. The contact between oxygen ions and oxygen gas is not so severe that the kinetic energy of the oxygen ions changes significantly, so the kinetic energy of the oxygen ions is transferred directly to the neutral oxygen atoms, resulting in a highly convergent state. An oxygen fast atomic beam 19 is created and emitted from the opening of the cylindrical cathode 12. When the amount of electricity charged in the capacitor 13 is completely discharged, the plasma disappears and the emission of high-speed atomic beams also stops. Here, the capacitor 13 is charged again, and when the switch 17 is turned on next time, plasma is generated again and the high-speed atomic beam 19 is emitted again. In this way, a high-power, high-speed atomic beam can be repeatedly obtained in a pulsed manner because the convergence is high and a large amount of oxygen ions are generated. Note that when the gas injected from the gas nozzle 16 is, for example, argon, a high-speed argon atomic beam is generated.
第２図は本発明の第２の実施例を示す斜視的な構成図で
ある・。本実施例は、第１の実施例において、ガスノズ
ル１６のガス供給側に高速で開閉するバルブ２１を設け
、さらにスイッチ１７に代えて図示省略の制御機構によ
りバルブ２１の開閉に同期してオン／オフするスイッチ
２２を設けたものである。その他の構成は、第１図に示
す第１の実施例と同様であり、第２図中１１−１６．１
８゜１９で示される要素は、第１図において対応する同
一番号の要素と同一の動作９機能を有する。FIG. 2 is a perspective configuration diagram showing a second embodiment of the present invention. This embodiment differs from the first embodiment in that a valve 21 that opens and closes at high speed is provided on the gas supply side of the gas nozzle 16, and furthermore, in place of the switch 17, a control mechanism (not shown) is used to turn on/off in synchronization with the opening and closing of the valve 21. A switch 22 is provided to turn it off. The other configuration is the same as the first embodiment shown in FIG. 1, and 11-16.1 in FIG.
The element designated 8.19 has the same operation 9 function as the corresponding like-numbered element in FIG.
以上の構成の第２の実施例の作用は以下の通りである。The operation of the second embodiment having the above configuration is as follows.
まず、バルブ２１を短時間開けて、直ちに閉じる。これ
で円筒形の陰極１２にガスが注入され、拡散して陽極１
１・陰極１２間に充満する。First, the valve 21 is opened for a short time and then immediately closed. The gas is now injected into the cylindrical cathode 12 and diffused into the anode 1.
Fills between 1 and cathode 12.
バルブ２１の「開」に同期してスイッチ２２を閉じ（オ
ン）、バルブ２１の「閉」に同期してスイッチ２２を開
く（オフ）。これで放電が発生し、以下第１の実施例と
同一のプロセスによって、収束性が高くかつ高出力の高
速原子線がパルス的に放出される。この第２の実施例に
よると、注入されたガスは、コンデンサ１３が放電しつ
くして高速原子線１９の放出が停止すると直ちに、図示
省略の真空ポンプによって排出されるから、真空容器１
８の内部を常に高真空に保っておくことができると言う
メリットがある。即ち使用上、この高速原子線を利用す
る対象等の環境を良好に保つことができるなどの利点が
ある。The switch 22 is closed (turned on) in synchronization with the "opening" of the valve 21, and the switch 22 is opened (off) in synchronization with the "closing" of the valve 21. This generates a discharge, and a high-speed atomic beam with high convergence and high power is emitted in pulses by the same process as in the first embodiment. According to this second embodiment, the injected gas is exhausted by the vacuum pump (not shown) as soon as the capacitor 13 is completely discharged and the emission of the fast atomic beam 19 stops.
This has the advantage of being able to maintain a high vacuum inside the 8 at all times. In other words, it has the advantage of being able to maintain a favorable environment for the object to which this high-speed atomic beam is used.
第３図は本発明の第３の実施例を示す斜視的な構成図で
ある。本実施例は、第２の実施例からスイッチ２２を取
り除き、コンデンサ１３を陰極１１と陽極１２の間に接
続したものである。その他の構成は第２図に示す第２の
実施例と同様であり、第３図中１１−１６．１８，１９
．２１で示される要素は、第２図において対応する同一
番号の要素と同等の動作９機能を有する。FIG. 3 is a perspective configuration diagram showing a third embodiment of the present invention. In this embodiment, the switch 22 is removed from the second embodiment, and a capacitor 13 is connected between the cathode 11 and the anode 12. The rest of the structure is the same as the second embodiment shown in FIG.
．． The element designated 21 has the same operation 9 function as the corresponding like-numbered element in FIG.
この実施例においては、バルブ２１の開閉によって、円
筒形の陰極１２の内部に、ガスがパルス的に注入され拡
散し、陽極１１・陰極１２間のガス圧が上昇すると、ガ
スの絶縁破壊により放電が生じて、コンデンサ１３に貯
えられた電荷が一気に放電され、以下第２の実施例と同
一のプロセスで収束性が高くかつ高出力の高速原子線が
パルス的に放射される。本実施例においても第２の実施
例と同様に、コンデンサ１３の放電終了により高速原子
線１９の放出が停止すると直ちに、注入されたガスが図
示省略の真空ポンプによって排出されるから、真空容器
１８の内部を常に高真空に保っておくことができる。さ
らに本実施例は、スイッチとその制御機構が不要なため
、装置が簡単化されろ利点を有している。In this embodiment, gas is injected and diffused into the cylindrical cathode 12 in pulses by opening and closing the valve 21, and when the gas pressure between the anode 11 and the cathode 12 increases, a dielectric breakdown of the gas causes a discharge. As a result, the charges stored in the capacitor 13 are discharged all at once, and a high-speed atomic beam with high convergence and high output is emitted in pulses in the same process as in the second embodiment. In this embodiment, as in the second embodiment, as soon as the discharge of the fast atomic beam 19 stops due to the end of discharge of the capacitor 13, the injected gas is exhausted by a vacuum pump (not shown). It is possible to maintain a high vacuum inside at all times. Furthermore, this embodiment has the advantage that the device can be simplified because a switch and its control mechanism are not required.
なお、以上の実施例における陽極や陰極とその開口部等
の構成要素の形状は一例であって、上記実施例に限定さ
れるものではない。このように、本発明はその主旨に沿
って種々に応用され、種々の実施態様を取り得るもので
ある。Note that the shapes of the anodes, cathodes, openings, and other components in the above embodiments are merely examples, and are not limited to the above embodiments. As described above, the present invention can be applied in various ways and can take various embodiments in accordance with its gist.
［発明の効果］
高速原子線は、高速のイオンビームと同様に、スパッタ
蒸着による薄膜形成、スパッタエッチングによる微細パ
ターン加工、二次イオン質量分析による材料評価などの
加工・分析に利用することができる。特に、高速原子線
は非荷電性であるために、金属、半導体ばかりでなく、
イオンビーム法が不得意とするプラスチックス、セラミ
ックスなどの絶縁物を対象とする場合にも威力がある。[Effects of the invention] Like high-speed ion beams, high-speed atomic beams can be used for processing and analysis such as thin film formation by sputter deposition, fine pattern processing by sputter etching, and material evaluation by secondary ion mass spectrometry. . In particular, since fast atomic beams are uncharged, they can be used not only for metals and semiconductors, but also for
It is also effective when targeting insulating materials such as plastics and ceramics, which the ion beam method is not good at.
本発明のフラッシュ高速原子線源によれば、これまでの
高速原子線源では実現が困難であった高い収束性を備え
た高出力の高速原子線を発生させることができ、上記し
た意味において、それらの微小領域の加工１分析に非常
に有益な効果を奏する。According to the flash fast atomic beam source of the present invention, it is possible to generate a high-power fast atomic beam with high convergence, which has been difficult to achieve with conventional fast atomic beam sources, and in the above sense, This has a very beneficial effect on processing 1 analysis of those minute areas.
第１図は本発明の第１の実施例を示す斜視的な構成図、
第２図は本発明の第２の実施例を示す斜視的な構成図、
第３図は本発明の第３の実施例を示す斜視的な構成図、
第４図は従来例を、示す斜視的な構成図である。
１１・・・陽極、１２・・・陰極、１３；・・コンデン
サ、１４・・・直流高電圧電源、１６・・ガスノズル、
！７・・・スイッチ、
２１・・バルブ、
真空容器、
２２・・スイッチ。
・・高速原子線、FIG. 1 is a perspective configuration diagram showing a first embodiment of the present invention;
FIG. 2 is a perspective configuration diagram showing a second embodiment of the present invention;
FIG. 3 is a perspective configuration diagram showing a third embodiment of the present invention;
FIG. 4 is a perspective configuration diagram showing a conventional example. 11... Anode, 12... Cathode, 13;... Capacitor, 14... DC high voltage power supply, 16... Gas nozzle,
! 7...Switch, 21...Valve, vacuum container, 22...Switch.・High-speed atomic beam,
Claims (3)
速原子線の通過する開口部を有する筒形の陰極と、 この筒形の陰極の内部にガスを注入するガスノズルと、 直流高電圧電源から充電されるコンデンサと、このコン
デンサと直列に上記陽極と陰極の間に接続されオンにす
ることにより上記ガスに放電を生じさせるスイッチ手段
とを備え、上記放電により上記高速原子線を得ることを
特徴とするフラッシュ高速原子線源。(1) An anode in a vacuum, a cylindrical cathode placed opposite to the anode and having an opening through which a high-speed atomic beam passes, a gas nozzle for injecting gas into the cylindrical cathode, and a DC high-voltage power source. and a switch means connected in series with the capacitor between the anode and the cathode to generate a discharge in the gas by turning on the capacitor, and to obtain the high-speed atomic beam by the discharge. Features: Flash fast atomic beam source.
、 ガスノズルに設けられ高速で開閉してガスをパルス的に
注入するバルブと、 上記開閉に同期してスイッチ手段をオン／オフする機構
とを備えることを特徴とするフラッシュ高速原子線源。(2) The flash high-speed atomic beam source according to claim 1, further comprising: a valve provided in the gas nozzle that opens and closes at high speed to inject gas in pulses; and a mechanism that turns on/off the switch means in synchronization with the opening and closing. A flash fast atomic beam source comprising:
速原子線の通過する開口部を有する筒形の陰極と、 高速で開閉するバルブを有し上記筒形の陰極の内部にガ
スをパルス的に注入するガスノズルと、上記陽極と陰極
の間に接続され直流高圧電源から充電されるとともに上
記ガスに放電を生じさせるコンデンサとを備え、 上記放電により上記高速原子線を得ることを特徴とする
フラッシュ高速原子線源。(3) An anode in a vacuum, a cylindrical cathode placed opposite to the anode and having an opening through which a high-speed atomic beam passes, and a valve that opens and closes at high speed to pulse gas into the inside of the cylindrical cathode. and a capacitor connected between the anode and the cathode to be charged from a DC high-voltage power source and to cause discharge in the gas, and to obtain the high-speed atomic beam by the discharge. Flash fast atomic source.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63193731A JP2669660B2 (en) | 1988-08-03 | 1988-08-03 | Flash fast atomic beam source |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63193731A JP2669660B2 (en) | 1988-08-03 | 1988-08-03 | Flash fast atomic beam source |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0244633A true JPH0244633A (en) | 1990-02-14 |
| JP2669660B2 JP2669660B2 (en) | 1997-10-29 |
Family
ID=16312872
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63193731A Expired - Lifetime JP2669660B2 (en) | 1988-08-03 | 1988-08-03 | Flash fast atomic beam source |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2669660B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2409928A (en) * | 2004-01-09 | 2005-07-13 | Applied Materials Inc | Improvements relating to ion implantation and instabilities |
-
1988
- 1988-08-03 JP JP63193731A patent/JP2669660B2/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2409928A (en) * | 2004-01-09 | 2005-07-13 | Applied Materials Inc | Improvements relating to ion implantation and instabilities |
| GB2409928B (en) * | 2004-01-09 | 2007-03-21 | Applied Materials Inc | Improvements relating to ion implantation |
| GB2432039A (en) * | 2004-01-09 | 2007-05-09 | Applied Materials Inc | Improvements relating to ion implantation and instabilities |
| GB2432039B (en) * | 2004-01-09 | 2009-03-11 | Applied Materials Inc | Improvements relating to ion implantation |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2669660B2 (en) | 1997-10-29 |
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