JPH0242737A - Wire bonding pad device - Google Patents

Wire bonding pad device

Info

Publication number
JPH0242737A
JPH0242737A JP1144105A JP14410589A JPH0242737A JP H0242737 A JPH0242737 A JP H0242737A JP 1144105 A JP1144105 A JP 1144105A JP 14410589 A JP14410589 A JP 14410589A JP H0242737 A JPH0242737 A JP H0242737A
Authority
JP
Japan
Prior art keywords
wire bonding
wire
bonding pad
bonding pads
width
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1144105A
Other languages
Japanese (ja)
Inventor
Keiichi Takizawa
滝沢　敬一
Kenzo Ashiuchi
芦内　賢三
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP1144105A priority Critical patent/JPH0242737A/en
Publication of JPH0242737A publication Critical patent/JPH0242737A/en
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05552—Shape in top view
    • H01L2224/05553—Shape in top view being rectangular
    • H—ELECTRICITY
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/061—Disposition
    • H01L2224/0612—Layout
    • H01L2224/0615—Mirror array, i.e. array having only a reflection symmetry, i.e. bilateral symmetry
    • H01L2224/06153—Mirror array, i.e. array having only a reflection symmetry, i.e. bilateral symmetry with a staggered arrangement, e.g. depopulated array
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49175—Parallel arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/494—Connecting portions
    • H01L2224/4943—Connecting portions the connecting portions being staggered
    • H01L2224/49431—Connecting portions the connecting portions being staggered on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/494—Connecting portions
    • H01L2224/4943—Connecting portions the connecting portions being staggered
    • H01L2224/49433—Connecting portions the connecting portions being staggered outside the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To arrange wire bonding pads with a high density by a method wherein the wire bonding pads are arranged in a zigzag manner, a width of conductors in a faced part is made narrower than a width of conductors in other parts, and a width of a first conductor group and that of a second conductor group are made substantially equal. CONSTITUTION:Wire bonding pads 161 are arranged in a zigzag manner; conductors 16 connected electrically to the wire bonding pads 161 are formed; in addition, bonding wires 17 which have been wire-bonded to the wire bonding pads 161 are formed. A width C of the conductors 16 in a part E adjacent to the wire bonding pads 161 is narrower than a width D of the conductors 16 in other parts. That is to say, since the width in the part E of the conductors 16 is made narrow, an arrangement density of the wire bonding pads 161 can be increased. Thereby, a pitch of the bonding pads can be made small and highly dense.

Description

【発明の詳細な説明】 〔発明の目的〕 （産業上の利用分野） 本発明は例えばファクシミリの感熱記録用ヘッド等に用
いられるワイヤボンディングパッド装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Field of Industrial Application) The present invention relates to a wire bonding pad device used, for example, in a thermal recording head of a facsimile.

（従来の技術） 従来、ファクシミリの感熱記録用ヘッドは第３図に示す
ように構成される。即ち、１１はセラミック等の絶縁基
板上に薄膜、厚膜等の技術によって、−列に高密度で並
べた多数の発熱抵抗体で。(Prior Art) Conventionally, a facsimile thermal recording head is constructed as shown in FIG. That is, numeral 11 is a large number of heating resistors arranged in rows with high density using thin film, thick film, etc. techniques on an insulating substrate made of ceramic or the like.

この発熱抵抗体１１は連続する複数個（この例では８個
）からなる複数のブロックに分割されている。This heating resistor 11 is divided into a plurality of blocks each consisting of a plurality of consecutive pieces (eight pieces in this example).

前記発熱抵抗体１１の各ブロックは夫々対応してダイオ
ードアレイ１２に接続される。このダイオードアレイ１
２はこの例では１チツプ内に８個のダイオード１２１　
を納めたフリップチップ型のダイオードアレイである。Each block of the heating resistor 11 is connected to a diode array 12 in a corresponding manner. This diode array 1
2 is 8 diodes 121 in one chip in this example.
It is a flip-chip type diode array containing a

前記発熱抵抗体１１は各一端が対応するダイオードアレ
イ１２内の各ダイオード１２１　を介してブロック選択
電極１３にブロック毎に共通接続され、各他端が各ブロ
ック間で同一位置にあるものどうし共通接続されて個別
選択電極１４に接続される。The heat generating resistor 11 has one end commonly connected to the block selection electrode 13 for each block via each diode 121 in the corresponding diode array 12, and each other end commonly connected between the blocks located at the same position. and connected to the individual selection electrodes 14.

而して、ファクシミリの記録は、所望の発熱抵抗体１１
に感熱紙を接触させて行われる。Therefore, the facsimile record indicates the desired heating resistor 11.
This is done by bringing thermal paper into contact with the

このような感熱記録用ヘッドでは発熱抵抗体１１の数が
数百ないし千数百程度と極めて多数であるため、第３図
に示すように、発熱抵抗体１１に直列に回り込み防止用
ダイオード１２１を接続したマトリクス配線によって駆
動回路数の低減を図っている。この場合に問題となるの
は、数百から千数百個という多数の発熱抵抗体１１と回
り込み防止用ダイオード１２１とをいかに作業能率よく
接続し、　かつヘッド全体をコンパクトに構成するかと
いう点である。この点を解決するため、第４図（ａ）、
　（ｂ）に示すように、複数個のダイオードを１チツプ
内に納めたダイオードアレイ１２を、発熱抵抗体１１が
形成されている基板１５上に配設し、このダイオードア
レイ１２を発熱抵抗体１１に直接接続してヘッドを小形
にまとめている。ところが、この場合にはダイオードア
レイ１２と発熱抵抗体１１からの導線１６との接続が問
題となる。ダイオードアレイ１２と導線１６とを接続す
る技術は、半導体素子のボンディング技術として各種の
方法が考えられるが、いずれの方法を用いるにしても、
導線１６のポンディングパッド１６１の相互間隔及びダ
イオードアレイ１２のポンディングパッド１２２の相互
間隔２００ＩＪＭ以下の高密度であると、ボンディング
の信頼性の点が歩留りが急激に低下する。　このため、
第４図（ａ）。In such a thermal recording head, the number of heating resistors 11 is extremely large, ranging from several hundred to several hundred, so as shown in FIG. The number of drive circuits is reduced by connecting matrix wiring. In this case, the problem is how to efficiently connect the large number of heat-generating resistors 11, ranging from several hundred to several thousand, and the bypass prevention diodes 121, and how to make the entire head compact. be. In order to solve this problem, Fig. 4(a),
As shown in (b), a diode array 12 in which a plurality of diodes are housed in one chip is disposed on a substrate 15 on which a heat generating resistor 11 is formed, and this diode array 12 is placed on a substrate 15 on which a heat generating resistor 11 is formed. The head is compact by connecting directly to the However, in this case, the connection between the diode array 12 and the conductive wire 16 from the heating resistor 11 becomes a problem. As a technique for connecting the diode array 12 and the conducting wire 16, various methods can be considered as bonding techniques for semiconductor elements, but whichever method is used,
If the mutual spacing between the bonding pads 161 of the conductor 16 and the mutual spacing between the bonding pads 122 of the diode array 12 is less than 200 IJM, the bonding reliability and yield will drop sharply. For this reason,
Figure 4(a).

（ｂ）に示すように、ダイオードアレイ１２のポンディ
ングパッド１２２及び導線Ｉ６のポンディングパッド１
６１は夫々直線状ではなく千鳥状に配設される。As shown in (b), the bonding pad 122 of the diode array 12 and the bonding pad 1 of the conductor I6
61 are arranged not in a straight line but in a staggered manner.

しかしなから、第４図（ａ）、　　（ｂ）に示す様にポ
ンディングパッド１６１を千鳥状に配設しても、そのポ
ンディングパッド１６１の高密度化には限界があった。However, even if the bonding pads 161 are arranged in a staggered manner as shown in FIGS. 4(a) and 4(b), there is a limit to increasing the density of the bonding pads 161.

（発明が解決しようとする問題点） 上述の問題点に鑑みて９本発明は高密度に配置されたワ
イヤボンディングパッド装置の製造方法を提供すること
を目的とする。(Problems to be Solved by the Invention) In view of the above-mentioned problems, it is an object of the present invention to provide a method for manufacturing a wire bonding pad device arranged at high density.

〔発明の構成〕[Structure of the invention]

（問題点を解決するための手段） 上記目的を達成するために、本発明のワイヤボンディン
グパッド装置は、 一方の部品のワイヤボンディングパッドと他方の部品の
ワイヤボンディングパッドとの距離の比較的近いものと
比較的遠いものとがこの部品のワイヤボンディングパッ
ド１つおきに現われる様な配置とされており、 且つ他方の部品から距離の比較的近いワイヤボンディン
グパッドどうし及び他方の部品から距離の比較的遠いワ
イヤボンディングパッドどうしを電気的に接続するボン
ディングワイヤを備え、複数のワイヤボンディングパッ
ドを一列状に配置した第１のワイヤボンディングパッド
列と、この第１のワイヤボンディングパッド列を構成す
るワイヤボンディングパッドに電気的に接続する導線か
らなる第１の導線群と、 この第１の導線群を構成する導線間に配された複数のワ
イヤボンディングパッドを一列状に配置した第２のワイ
ヤボンディングパッド列と、この第２のワイヤボンディ
ングパッド列を構成するワイヤボンディングパッドに電
気的に接続する導線からなる第２の導線群とを具備し、
前記第２のワイヤボンディングパッド列を構成するワイ
ヤボンディングパッドに対向する部分の前記第１の導線
群を構成する導線の幅は、前記第１の導線群を構成する
他の部分の導線の幅よりも狭く、且つ前記第１の導線群
を構成する偉の部分の導線の幅と前記第２の導線群を構
成する導線の幅とが実質的に等しいことを特徴とするも
のである。(Means for Solving the Problems) In order to achieve the above object, the wire bonding pad device of the present invention provides a wire bonding pad device in which the distance between the wire bonding pad of one component and the wire bonding pad of the other component is relatively short. Wire bonding pads that are relatively close to each other and wire bonding pads that are relatively far from the other component appear on every other wire bonding pad of this component, and wire bonding pads that are relatively far from the other component appear on every other wire bonding pad of this component. A first wire bonding pad row in which a plurality of wire bonding pads are arranged in a line, including bonding wires that electrically connect wire bonding pads to each other, and wire bonding pads constituting this first wire bonding pad row. a first conductive wire group consisting of electrically connected conductive wires; a second wire bonding pad row in which a plurality of wire bonding pads are arranged in a line between the conductive wires constituting the first conductive wire group; a second conductive wire group consisting of conductive wires electrically connected to the wire bonding pads constituting the second wire bonding pad row;
The width of the conductive wires constituting the first conductive wire group in the portion facing the wire bonding pads constituting the second wire bonding pad row is greater than the width of the conductive wires in other portions constituting the first conductive wire group. The conductor wire is also narrow, and the width of the conductor wire in the cross section constituting the first conductor group is substantially equal to the width of the conductor wire constituting the second conductor group.

（作用） 上述の構成をとることにより、本発明のワイヤボンディ
ングパッド装置は、そのワイヤボンディングパッドを高
密度に配置することができる。(Function) By adopting the above-described configuration, the wire bonding pad device of the present invention can arrange its wire bonding pads at high density.

（実施例） 以下図面を参照して本発明の一実施例を説明する。(Example) An embodiment of the present invention will be described below with reference to the drawings.

第１図（ａ）において、ワイヤボンディングパッド１６
１は千鳥状に配置され、　このワイヤボンディングパッ
ド１６１に電気的に接続する導線１６が形成されている
。１７は、このワイヤボンディングパッド１６１にワイ
ヤボンディングされたボンディングワイヤである。この
ワイヤボンディング１６１に隣接する部分Ｅの導線１６
の幅Ｃは、他の部分の導線１６の幅りよりも狭い。例え
ば、ポンディングパッド１６１の幅Ａを０．１４ｍｍ、
　ワイヤボンディングパッド１６１と導線１６との間隔
Ｂは０．０３！Ｉｔ、導線１６の幅狭部の幅Ｃは０．０
５ｍｍ、導線１６の幅広部の幅りは０．０７＋ｕ＋、ボ
ンディングワイヤ１７の径は０．０２５ｍｍとすると、
　ワイヤボンディングパッド１６１のピッチＰは、０．
１１１１１！１となる。すなわち、導線１６はＥの部分
の幅を狭くしたことにより、ワイヤボンディングパッド
１６１の配置密度が高まることになる。In FIG. 1(a), the wire bonding pad 16
1 are arranged in a staggered manner, and conductive wires 16 electrically connected to these wire bonding pads 161 are formed. 17 is a bonding wire wire-bonded to this wire bonding pad 161. Conductive wire 16 in portion E adjacent to this wire bonding 161
The width C of the conductive wire 16 is narrower than the width of the conductive wire 16 in other parts. For example, the width A of the pounding pad 161 is 0.14 mm,
The distance B between the wire bonding pad 161 and the conductive wire 16 is 0.03! It, the width C of the narrow part of the conductor 16 is 0.0
5mm, the width of the wide part of the conductor 16 is 0.07+u+, and the diameter of the bonding wire 17 is 0.025mm.
The pitch P of the wire bonding pads 161 is 0.
It becomes 11111!1. That is, by narrowing the width of the portion E of the conductive wire 16, the arrangement density of the wire bonding pads 161 is increased.

しかし、第１図（ａ）に示すワイヤボンディングパッド
装置においては、導線１６の高さとポンディングパッド
１６１の高さは第１図（ｂ）に示すように同一高さに形
成される。而して、高密度のボンディングはボンディン
グワイヤ径、ポンディングパッドピッチ及びポンディン
グパッドサイズにより制限される。このため、ワイヤボ
ンディングパッド１６１のピッチＰは、０．１１ｍｍが
限界となる。However, in the wire bonding pad device shown in FIG. 1(a), the height of the conducting wire 16 and the height of the bonding pad 161 are formed to be the same height as shown in FIG. 1(b). Thus, high-density bonding is limited by bonding wire diameter, bonding pad pitch, and bonding pad size. Therefore, the pitch P of the wire bonding pads 161 is limited to 0.11 mm.

したがって、第１図（ａ）に示すワイヤボンディングパ
ッド装置においては、そのワイヤボンデインクパッド１
６１の配置の高密度化には限界がある。Therefore, in the wire bonding pad device shown in FIG. 1(a), the wire bonding pad 1
There is a limit to increasing the density of the arrangement of 61.

なお、一実施例においても、第４図（ａ）、　（ｂ）に
示す様にワイヤボンディングパッド１６１　を千鳥状に
配置している。すなわち、各部品の複数のワイヤボンデ
ィングパッドの対応するものどうしをワイヤボンディン
グして電気的に接続するに際し、一方の部品のワイヤボ
ンディングパッドと他方の部品のワイヤボンディングパ
ッドとの距離の比較的近いものと比較的遠いものとがこ
の部品の接続端子１つおきに現われる様な配置とされて
おり、且つワイヤボンディングが他方の部品から距離の
比較的近い接続端子どうし及び他方の部品から距離の比
較的遠いワイヤボンディングパッドどうしでなされてい
る構造となっている。In one embodiment, the wire bonding pads 161 are arranged in a staggered manner as shown in FIGS. 4(a) and 4(b). In other words, when electrically connecting multiple corresponding wire bonding pads of each component by wire bonding, the distance between the wire bonding pad of one component and the wire bonding pad of the other component is relatively close. The wire bonding is arranged so that the wire bonding appears on every other connecting terminal of this component, and the wire bonding is done between the connecting terminals that are relatively close to each other and between the connecting terminals that are relatively far away from the other component. The structure is made up of wire bonding pads that are far apart.

次に、第１図（ａ）、　（ｂ）をさらに改良したワイヤ
ボンディングパッド装置の他の実施例を第２図（ａ）。Next, FIG. 2(a) shows another embodiment of the wire bonding pad device which is a further improvement on FIGS. 1(a) and 1(b).

（ｂ）にしたがって説明する。This will be explained according to (b).

第２図（ａ）、　（ｂ）において、感熱記録用ヘッドの
発熱抵抗体に接続された導線１６の先端にはワイヤボン
ディングパッド１６１が形成される。　このワイングパ
ッド１６１の位置を同一線上に配置したいわゆる千鳥状
に配設される。ワイヤボンディングパッド１６１に隣接
する導線１６部は他の導線１６部より幅狭に形成される
。而して、幅狭の導線１６部に隣接するポンディングパ
ッド１６１部（図中斑点状部）は導線１６の高さより例
えば１０ミクロン程度高くなるように例えば部分メツキ
等が施されている。１７１はボンディングワイヤ１７の
ボンディング部である。In FIGS. 2(a) and 2(b), a wire bonding pad 161 is formed at the tip of the conductive wire 16 connected to the heating resistor of the thermal recording head. The winding pads 161 are arranged on the same line in a so-called staggered manner. A portion of the conducting wire 16 adjacent to the wire bonding pad 161 is formed narrower than other portions of the conducting wire 16. The portion of the bonding pad 161 (spotted portion in the figure) adjacent to the narrow conducting wire 16 is partially plated, for example, so that it is higher than the height of the conducting wire 16 by, for example, about 10 microns. 171 is a bonding portion of the bonding wire 17.

このようにワイヤボンディングパッド１６１の高さを隣
接する導線１６の高さより高く形成することにより、ボ
ンディングワイヤ１７の径、ワイヤボンディングパッド
１６１の幅を変えることなく、　パッドピッチを詰める
ことができ高密度化を図ることができる。例えば、ワイ
ヤボンディングパッド１６１の高さを導ＮｌＡｌ６の高
さより１０ミクロン程度高くすることにより、ワイヤボ
ンディングパッド１６１のピッチＰを０．０９ｍ■にす
葛ことができ、ボンディングマシン精度を±４０ミクロ
ンまで吸収できる。　この場合、ワイヤボンディングパ
ッド１６１の幅は０．１４＋ａｍ、　ワイヤボンディン
グパッド１６１と幅狭の導線１６部との間隔Ｂは０．０
２５ｍｍ、幅狭の導線１６部の幅Ｃは０．０４ｍｍ、幅
広の導線１６部の幅りは０．０７ｍｍである。By forming the height of the wire bonding pad 161 higher than the height of the adjacent conductive wire 16 in this way, the pad pitch can be reduced without changing the diameter of the bonding wire 17 or the width of the wire bonding pad 161, resulting in high density. It is possible to aim for For example, by making the height of the wire bonding pad 161 about 10 microns higher than the height of the conductive NlAl6, the pitch P of the wire bonding pad 161 can be reduced to 0.09 m, and the bonding machine accuracy can be increased to ±40 microns. It can be absorbed. In this case, the width of the wire bonding pad 161 is 0.14+am, and the distance B between the wire bonding pad 161 and the narrow conducting wire 16 is 0.0
The width C of the 16 parts of the narrow conducting wire is 0.04 mm, and the width of the 16 parts of the wide conducting wire is 0.07 mm.

したがって、第２図（ａ）　、　（ｂ）に示すワイヤボ
ンディングパッド装置は、第１図（ａ）　、　（ｂ）に
示すワイヤボンディングパッド装置よりもそのワイヤボ
ンディングパッドの配置を高密度化することができる。Therefore, the wire bonding pad device shown in FIGS. 2(a) and (b) has wire bonding pads arranged more densely than the wire bonding pad device shown in FIGS. 1(a) and (b). Can be done.

〔発明の効果〕〔Effect of the invention〕

本発明のワイヤボンディングパッド装置は、上述の構成
をとることにより、ポンディングパッドのピッチを小さ
くすることができ、高密度化を行うことができる。By adopting the above-described configuration, the wire bonding pad device of the present invention can reduce the pitch of the bonding pads and achieve high density.

特に、ファクシミリの感熱記録用ヘッド等に用いて好適
する。It is particularly suitable for use in facsimile heat-sensitive recording heads and the like.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図（ａ）は本発明のワイヤボンディングパッド装置
の一実施例を示す平面図、第１図（ｂ）は第１図（ａ）
の３Ｂ　−３Ｂ線断面図、第２図（ａ）は本発明の他の
実施例を示す平面図、第２図（ｂ）は第２図（ａ）の４
８−４Ｂ線断面図、第３図は従来の感熱記録用ヘッドを
示す回路図、第４図（ａ）、（ｂ）は従来の感熱記録用
ヘッドのダイオードアレイと導線とのワイヤボンディン
グ部を示す平面図及び側面図である。 １１・・・発熱抵抗体、　　　１２・・・ダイオードア
レイ。 １２１・・・ダイオード、１６・・・導線、１６１・・
・ワイヤボンディングパッド・１７・・・ボンディング
ワイヤ、 １７１・・・ポンディングパッド部。 代理人　弁理士　則　近　憲　佑 同　　　　竹　花　喜久男 （ａ） （ａ） （ｂ） 第２図 第１図FIG. 1(a) is a plan view showing an embodiment of the wire bonding pad device of the present invention, and FIG. 1(b) is a plan view showing an embodiment of the wire bonding pad device of the present invention.
FIG. 2(a) is a plan view showing another embodiment of the present invention, and FIG. 2(b) is a sectional view taken along line 3B-3B of FIG. 2(a).
8-4B line sectional view, FIG. 3 is a circuit diagram showing a conventional thermal recording head, and FIGS. 4(a) and (b) show a wire bonding portion between a diode array and a conducting wire of a conventional thermal recording head. FIG. 2 is a plan view and a side view. 11... Heat generating resistor, 12... Diode array. 121...Diode, 16...Conductor, 161...
- Wire bonding pad - 17... Bonding wire, 171... Bonding pad part. Agent Patent attorney Noriyuki Chika Yudo Kikuo Takehana (a) (a) (b) Figure 2 Figure 1

Claims (2)

【特許請求の範囲】[Claims] （１）一方の部品のワイヤボンディングパッドと他方の
部品のワイヤボンディングパッドとの距離の比較的近い
ものと比較的遠いものとがこの部品のワイヤボンディン
グパッド１つおきに現われる様な配置とされており、 且つ他方の部品から距離の比較的近いワイヤボンディン
グパッドどうし及び他方の部品から距離の比較的遠いワ
イヤボンディングパッドどうしを電気的に接続するボン
ディングワイヤを備え、複数のワイヤボンディングパッ
ドを一列状に配置した第１のワイヤボンディングパッド
列と、この第１のワイヤボンディングパッド列を構成す
るワイヤボンディングパッドに電気的に接続する導線か
らなる第１の導線群と、 この第１の導線群を構成する導線間に配された複数のワ
イヤボンディングパッドを一列状に配置した第２のワイ
ヤボンディングパッド列と、この第２のワイヤボンディ
ングパッド列を構成するワイヤボンディングパッドに電
気的に接続する導線からなる第２の導線群とを具備し、 前記第２のワイヤボンディングパッド列を構成するワイ
ヤボンディングパッドに対向する部分の前記第１の導線
群を構成する導線の幅は、前記第１の導線群を構成する
他の部分の導線の幅よりも狭く、且つ前記第１の導線群
を構成する他の部分の導線の幅と前記第２の導線群を構
成する導線の幅とが実質的に等しいことを特徴とするワ
イヤボンディングパッド装置。(1) The wire bonding pads of one component and the wire bonding pads of the other component are arranged so that the wire bonding pads of the other component are relatively close to each other and those that are relatively far apart appear at every other wire bonding pad of this component. and a bonding wire that electrically connects wire bonding pads that are relatively close to each other and wire bonding pads that are relatively far from the other component, and a plurality of wire bonding pads are arranged in a line. a first wire bonding pad row arranged; a first conductor group consisting of conductor wires electrically connected to the wire bonding pads constituting the first wire bonding pad row; A second wire bonding pad row in which a plurality of wire bonding pads arranged between conductive wires are arranged in a line, and a second wire bonding pad row consisting of conductive wires electrically connected to the wire bonding pads constituting the second wire bonding pad row. 2 conductive wire groups, and the width of the conductive wires constituting the first conductive wire group in the portion facing the wire bonding pads constituting the second wire bonding pad row is equal to the width of the conductive wires constituting the first conductive wire group. The width of the conductor wire in the other portion constituting the first conductor group is substantially equal to the width of the conductor wire constituting the second conductor group. Characteristic wire bonding pad device. （２）前記第２のワイヤボンディングパッド列を構成す
るワイヤボンディングパッドは、前記第２の導線群を構
成する導線より高く形成することを特徴とする特許請求
の範囲第１項記載のワイヤボンディングパッド装置。(2) The wire bonding pad according to claim 1, wherein the wire bonding pads constituting the second wire bonding pad row are formed higher than the conductors constituting the second conductor group. Device.
JP1144105A 1989-06-08 1989-06-08 Wire bonding pad device Pending JPH0242737A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1144105A JPH0242737A (en) 1989-06-08 1989-06-08 Wire bonding pad device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1144105A JPH0242737A (en) 1989-06-08 1989-06-08 Wire bonding pad device

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP56084594A Division JPS57199228A (en) 1981-06-02 1981-06-02 Wire bonding pad device

Publications (1)

Publication Number Publication Date
JPH0242737A true JPH0242737A (en) 1990-02-13

Family

ID=15354303

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1144105A Pending JPH0242737A (en) 1989-06-08 1989-06-08 Wire bonding pad device

Country Status (1)

Country Link
JP (1) JPH0242737A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1049363A2 (en) * 1999-04-30 2000-11-02 Fujitsu Limited Printed circuit board
EP1545170A1 (en) * 2003-12-16 2005-06-22 Nitto Denko Corporation Wiring circuit board
US7399061B2 (en) 2004-09-24 2008-07-15 Seiko Epson Corporation Bonding structure, actuator device and liquid-jet head

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5277744A (en) * 1975-12-24 1977-06-30 Seiko Epson Corp Liqud crystal display device
JPS57199228A (en) * 1981-06-02 1982-12-07 Toshiba Corp Wire bonding pad device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5277744A (en) * 1975-12-24 1977-06-30 Seiko Epson Corp Liqud crystal display device
JPS57199228A (en) * 1981-06-02 1982-12-07 Toshiba Corp Wire bonding pad device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1049363A2 (en) * 1999-04-30 2000-11-02 Fujitsu Limited Printed circuit board
EP1049363A3 (en) * 1999-04-30 2002-05-02 Fujitsu Limited Printed circuit board
EP1545170A1 (en) * 2003-12-16 2005-06-22 Nitto Denko Corporation Wiring circuit board
US7087844B2 (en) 2003-12-16 2006-08-08 Nitto Denko Corporation Wiring circuit board
US7399061B2 (en) 2004-09-24 2008-07-15 Seiko Epson Corporation Bonding structure, actuator device and liquid-jet head

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