JPH0237095B2 - - Google Patents

Info

Publication number
JPH0237095B2
JPH0237095B2 JP57019859A JP1985982A JPH0237095B2 JP H0237095 B2 JPH0237095 B2 JP H0237095B2 JP 57019859 A JP57019859 A JP 57019859A JP 1985982 A JP1985982 A JP 1985982A JP H0237095 B2 JPH0237095 B2 JP H0237095B2
Authority
JP
Japan
Prior art keywords
copper
weight
wire
ultra
wires
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57019859A
Other languages
Japanese (ja)
Other versions
JPS57149744A (en
Inventor
Arudeingaa Furitsutsu
Bishotsufu Arupuretsuhito
Hoonifuaa Uorufugangu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
WC Heraus GmbH and Co KG
Original Assignee
WC Heraus GmbH and Co KG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by WC Heraus GmbH and Co KG filed Critical WC Heraus GmbH and Co KG
Publication of JPS57149744A publication Critical patent/JPS57149744A/en
Publication of JPH0237095B2 publication Critical patent/JPH0237095B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
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    • H01L24/42—Wire connectors; Manufacturing methods related thereto
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    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
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Abstract

Ultra-fine wires of copper or a copper alloy of 98 to 99.9% by weight of copper and 0.1 to 2% by weight of beryllium, tin, zinc, silver, zirconium, chromium or iron, are utilised for the production of the external connectors or terminals for semiconductor components. The wires may have a diameter of 0.01 to 0.06mm.

Description

【発明の詳細な説明】 この発明は半導体素子の外部接続の製造に直径
0.01mm〜0.06mmの極細ワイヤを使用することに関
する。DETAILED DESCRIPTION OF THE INVENTION The present invention provides a method for manufacturing external connections of semiconductor devices.
Concerning the use of ultra-fine wires of 0.01mm to 0.06mm.

半導体素子の外部接続製造用に金、アルミニウ
ムまたはアルミニウム合金、例えばAlSi1（Al−
１％Si）、AlCu4（Al−４％Cu）（ドイツ特許公開
公報第2929623号）及びAlMg1（Al−１％Mg）か
らなる極細ワイヤを使用することは既知である。 Gold, aluminum or aluminum alloys, such as AlSi1 (Al-
It is known to use ultra-fine wires of AlCu4 (Al-4% Cu) (DE-A-2929623) and AlMg1 (Al-1% Mg).

銅または銅合金〔特にCuSn6（Cu−６％Sn）〕
心線及びアルミニウムまたはアルミニウム合金か
らなる被覆からなる極細ワイヤはドイツ特許
P3023528.0に記載されている。 Copper or copper alloy [especially CuSn6 (Cu-6%Sn)]
German patent for ultra-fine wire consisting of core wire and coating made of aluminum or aluminum alloy
Described in P3023528.0.

アルミニウム及びアルミニウム合金からなる極
細ワイヤは楔−楔法（Wedge−Wedge−
Verfahren）による超音波溶接接合の製造に優先
的に使用されるが、心線／被覆ワイヤ（銅／アル
ミニウム極細ワイヤ）は楔−楔法による超音波溶
接により、ならびに釘頭接触（Nagelkopf−
Kontaktierung）法による熱音波
（Thermosonic）溶接により半導体素子と接続要
素とに結合される。 Ultra-fine wires made of aluminum and aluminum alloys are manufactured using the wedge method.
Cored/coated wire (copper/aluminum ultra-fine wire) is preferentially used for the production of ultrasonic welded joints by the wedge-to-wedge method as well as by nail-head contact (Nagelkopf-
The semiconductor component and the connecting element are bonded by thermosonic welding using the Kontaktierung method.

これらの銅／被覆ワイヤと半導体素子間の結合
の機械強度と電導性とは良好である。しかし、銅
または銅合金からなる接続要素（外部接続構造）
例えば装置取付け部材と前記ワイヤとの間の結合
の形成の際、損傷が生ずることがあり、これらの
損傷が生ずると使用条件下においてはワイヤは剥
離する。 The mechanical strength and electrical conductivity of the bond between these copper/coated wires and the semiconductor device are good. However, connection elements made of copper or copper alloys (external connection structures)
For example, during the formation of the bond between the device mounting member and the wire, damage may occur, which causes the wire to separate under conditions of use.

一体に結合された半導体素子の信頼性は接続ワ
イヤ、及び接続ワイヤの半導体素子と接続要素と
の結合強度とに高度に依存する。従つて接続ワイ
ヤの改善、及び半導体技術における貴金属の使用
の節約により必要となる新しい研究開発に関心が
高まつている。 The reliability of semiconductor components bonded together is highly dependent on the connection wire and the bond strength of the connection wire between the semiconductor component and the connection element. There is therefore increasing interest in new research and developments necessitated by improvements in connecting wires and the economization of the use of precious metals in semiconductor technology.

こうして、この発明の課題はアルミニウムで被
覆したケイ素半導体素子と、ならびに銅または銅
合金からなる接続要素とも信頼性ある結合を形成
する、半導体素子の外部接続を造るための、直径
0.01mm〜0.06mmの極細ワイヤを見出すにある。 The object of the invention is thus to create an external connection of a semiconductor component that forms a reliable connection with an aluminium-coated silicon semiconductor component and also with a connection element made of copper or a copper alloy.
Find ultra-fine wires of 0.01mm to 0.06mm.

この課題はこの発明により98重量％〜99.9重量
％の銅及び0.1重量％〜２重量％のベリリウム、
スズ、亜鉛、銀、ジルコニウム、クロムまたは鉄
からなる銅合金からなる極細ワイヤにより解決さ
れる。 This problem is solved by the present invention, which contains 98% to 99.9% by weight of copper and 0.1% to 2% by weight of beryllium.
The solution is ultra-fine wires made of copper alloys made of tin, zinc, silver, zirconium, chromium or iron.

銅99.4重量％とスズ0.6重量％の銅合金及び銅
99.85重量％とジルコニウム0.15重量％の銅合金
からなる極細ワイヤが特に好ましい。 Copper alloy and copper with 99.4% copper and 0.6% tin by weight
Particularly preferred is a very fine wire made of a copper alloy of 99.85% by weight and 0.15% by weight of zirconium.

なお本発明における銅合金における合金元素量
を0.1〜２重量％に限定した理由は次のとおりで
ある。 The reason why the amount of alloying elements in the copper alloy in the present invention is limited to 0.1 to 2% by weight is as follows.

銅から成る接続ワイヤに比べて優れた機械的性
質（特に疲労強度および引張り強度）および表面
変色耐性を有する接続ワイヤを得るためには、合
金元素（Be、Sn、Zn、Ag、Cr、Fe）の量は少
なくとも0.1％なくてはならない。ここに表面変
色耐性とは、主に酸化銅からなる障害層を実質的
にワイヤ表面に形成しない性質である。銅ワイヤ
の場合にはそのような層が生じる。これらの層は
非常に薄いものではあるが、接続要素すなわち外
部接続構造（基板ないしリード・フレーム）への
ワイヤの結合を弱めるものである。 In order to obtain connecting wires with superior mechanical properties (especially fatigue strength and tensile strength) and surface discoloration resistance compared to connecting wires made of copper, alloying elements (Be, Sn, Zn, Ag, Cr, Fe) The amount of must be at least 0.1%. Here, the surface discoloration resistance is a property that substantially prevents formation of an obstacle layer mainly made of copper oxide on the wire surface. Such layers occur in the case of copper wires. Although these layers are very thin, they weaken the bond of the wire to the connecting element or external connection structure (substrate or lead frame).

一方、合金元素が２重量％を越えると銅合金の
電気伝導率が小さくなりすぎる。また後記するよ
うに、ワイヤを半導体素子と結合する際、超音波
溶融によりワイヤにビードを形成するが、このビ
ードが硬くなりすぎ、シリコンチツプに亀裂
（cratering）が生じる危険が増大する。 On the other hand, if the alloying element exceeds 2% by weight, the electrical conductivity of the copper alloy becomes too low. Further, as will be described later, when a wire is bonded to a semiconductor device, a bead is formed in the wire by ultrasonic melting, but this bead becomes too hard, increasing the risk of cracking the silicon chip.

この種の銅合金自体は既知である。例えば、ス
ズ１重量％またはジルコニウム0.15重量％の銅合
金は、デイース「技術における銅および銅合金
（Kupfer und kupfer−legierungen in der
Technik）」（1967年572頁）または銅合金極細ワ
イヤは銅または銅合金からなる接続要素と楔法溶
接法（Wedge−Verfahren）による超音波溶接に
より結合される。極細ワイヤと銅及び極細ワイヤ
と銅合金との結合部分（接合部分）はきず（亀裂
など）が生じない。Cu／Cu対、CuSn0.6（Cu−
0.6％Sn）／Cu対及びCuZr0.15／Cu対の耐破損性
はCu／Al及びCu／Cu−Al対の耐破損性より大き
い。 Copper alloys of this type are known per se. For example, copper alloys with 1% by weight tin or 0.15% by weight zirconium are described in der Kupfer und kupfer-legierungen in technology.
Technik (1967, p. 572) or ultra-fine copper alloy wires are joined to connecting elements made of copper or copper alloys by ultrasonic welding using the wedge welding method (Wedge-Verfahren). No flaws (such as cracks) occur in the joints (junctions) between the ultra-fine wire and the copper and between the ultra-fine wire and the copper alloy. Cu/Cu pair, CuSn0.6 (Cu−
The fracture resistance of the 0.6%Sn)/Cu pair and the CuZr0.15/Cu pair is greater than that of the Cu/Al and Cu/Cu-Al pairs.

半導体素子−例えばアルミニウムで被覆したケ
イ素との結合は釘頭接触法による熱音波溶融によ
り行われ、この場合極細ワイヤの溶融は保護ガス
雰囲気下で行われ、ビードが形成される。 Bonding to semiconductor components, for example silicon coated with aluminium, takes place by thermosonic melting using the nail head contact method, the melting of the fine wire taking place under a protective gas atmosphere and forming a bead.

この発明により使用する極細ワイヤ（直径25μ
ｍの場合）では溶融により生成するビードの直径
は既知の極細ワイヤの場合（AlSi1：55μｍ、
CuZr0.15：50μｍ）より小さい。この大きさの差
異は接合個所の電子顕微鏡写真の比較により示さ
れるように溶着したビードの場合一層顕著であ
る。 The ultra-fine wire (diameter 25μ) used by this invention
m), the diameter of the bead formed by melting is the same as for the known ultra-fine wire (AlSi1: 55 μm,
CuZr0.15: 50μm) smaller. This size difference is even more pronounced in the case of welded beads, as shown by comparison of electron micrographs of the joints.

半導体装置における導体接続線の微小化の進歩
に鑑みて、溶融により生成するビードの直径がよ
り小さいことはこの発明による銅合金のさらに別
の利点であることが判明した。 In view of the progress in miniaturization of conductor connection lines in semiconductor devices, it has been found that the smaller diameter of the bead produced by melting is yet another advantage of the copper alloy according to the invention.

釘頭−接点法による熱音波溶接中にノズル開口
部はワイヤ案内のための且つソノトロード
（Sonotrode）として働くノズルの出口表面と既
知の極細ワイヤとの溶着結合により閉塞されるこ
とがある。アルミニウム、アルミニウム合金また
は銅−アルミニウムからなるこの種の既知の極細
ワイヤとは異つてこの発明による銅合金極細ワイ
ヤはノズルと溶着結合する傾向はなく、従つてノ
ズル開口部が閉塞される危険は極めて少ない。 During thermosonic welding by the nailhead-contact method, the nozzle opening can be closed by a welded connection of the known ultra-thin wire to the outlet surface of the nozzle, which serves for wire guidance and as a sonotrode. In contrast to known ultra-fine wires of this kind made of aluminum, aluminum alloys or copper-aluminum, the copper alloy ultra-fine wire according to the invention has no tendency to weld to the nozzle, so that the risk of blockage of the nozzle opening is extremely low. few.

銅合金極細ワイヤは高電導性のためにアルミニ
ウム極細ワイヤ、アルミニウム合金極細ワイヤま
たは銅−アルミニウム極細ワイヤに比して疲労強
度及び引張強さが優れる。これは単に高破断性に
寄与するだけでなく、安定な回動線の形成にも寄
与する。 Due to its high conductivity, copper alloy ultrafine wire has superior fatigue strength and tensile strength compared to aluminum ultrafine wire, aluminum alloy ultrafine wire, or copper-aluminum ultrafine wire. This not only contributes to high breakability but also to the formation of a stable rotation line.

Claims (1)

【特許請求の範囲】 １ 銅98重量％〜99.9重量％およびベリリウム、
スズ、亜鉛、銀、ジルコニウム、クロムまたは鉄
0.1重量％〜２重量％の銅合金からなる直径0.01
mm〜0.06mmの半導体素子の外部接続用極細ワイ
ヤ。 ２ 銅99.4重量％及びスズ0.6重量％からなる特
許請求の範囲第１項記載の極細ワイヤ。 ３ 銅99.85重量％及びジルコニウム0.15重量％
からなる特許請求の範囲第１項記載の極細ワイ
ヤ。[Claims] 1. 98% to 99.9% by weight of copper and beryllium,
tin, zinc, silver, zirconium, chromium or iron
Diameter 0.01 made of 0.1% to 2% copper alloy
Ultra-thin wire for external connection of semiconductor devices with a diameter of mm to 0.06 mm. 2. The ultrafine wire according to claim 1, comprising 99.4% by weight of copper and 0.6% by weight of tin. 3 99.85% by weight of copper and 0.15% by weight of zirconium
An ultrafine wire according to claim 1, comprising:
JP57019859A 1981-02-12 1982-02-12 Extrafine wire Granted JPS57149744A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19813104960 DE3104960A1 (en) 1981-02-12 1981-02-12 "FINE WIRE"

Publications (2)

Publication Number Publication Date
JPS57149744A JPS57149744A (en) 1982-09-16
JPH0237095B2 true JPH0237095B2 (en) 1990-08-22

Family

ID=6124622

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57019859A Granted JPS57149744A (en) 1981-02-12 1982-02-12 Extrafine wire

Country Status (5)

Country Link
JP (1) JPS57149744A (en)
CH (1) CH652532A5 (en)
DE (1) DE3104960A1 (en)
FR (1) FR2499767A1 (en)
GB (1) GB2093064B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05184788A (en) * 1991-12-19 1993-07-27 Daiken Trade & Ind Co Ltd Drying storage
JPH0716797U (en) * 1993-08-27 1995-03-20 武盛 豊永 High temperature clothes dryer with dehumidifier

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60223149A (en) * 1984-04-19 1985-11-07 Hitachi Ltd Semiconductor device
US4705204A (en) * 1985-03-01 1987-11-10 Mitsubishi Denki Kabushiki Kaisha Method of ball forming for wire bonding
GB2175009B (en) * 1985-03-27 1990-02-07 Mitsubishi Metal Corp Wire for bonding a semiconductor device and process for producing the same
US5149917A (en) * 1990-05-10 1992-09-22 Sumitomo Electric Industries, Ltd. Wire conductor for harness
JP2501303B2 (en) * 1994-04-11 1996-05-29 株式会社東芝 Semiconductor device
JP2501305B2 (en) * 1994-06-06 1996-05-29 株式会社東芝 Semiconductor device
JP2501306B2 (en) * 1994-07-08 1996-05-29 株式会社東芝 Semiconductor device
DE19606116A1 (en) * 1996-02-20 1997-08-21 Berkenhoff Gmbh Electrical contact elements
JP3891346B2 (en) * 2002-01-07 2007-03-14 千住金属工業株式会社 Fine copper ball and method for producing fine copper ball
TWI287282B (en) 2002-03-14 2007-09-21 Fairchild Kr Semiconductor Ltd Semiconductor package having oxidation-free copper wire
KR101019811B1 (en) 2005-01-05 2011-03-04 신닛테츠 마테리알즈 가부시키가이샤 Bonding wire for semiconductor device
WO2017221434A1 (en) * 2016-06-20 2017-12-28 日鉄住金マイクロメタル株式会社 Bonding wire for semiconductor device
DE102018122574B4 (en) * 2018-09-14 2020-11-26 Kme Special Products Gmbh Use of a copper alloy
DE102019113082A1 (en) * 2019-05-17 2020-11-19 Infineon Technologies Ag SEMICONDUCTOR HOUSING AND METHOD OF FORMING A SEMICONDUCTOR HOUSING

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Publication number Priority date Publication date Assignee Title
DE1090437B (en) * 1956-08-14 1960-10-06 Nippert Electric Products Comp Process for improving the electrical and mechanical properties of copper-zirconium alloys
NL219101A (en) * 1956-10-31 1900-01-01
DE2929623C2 (en) * 1979-07-21 1981-11-26 W.C. Heraeus Gmbh, 6450 Hanau Fine wire made from an aluminum alloy
JPS5678357U (en) * 1979-11-09 1981-06-25
DE3011661C2 (en) * 1980-03-26 1982-08-26 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Semiconductor arrangement with bonding wires
DE3023528C2 (en) 1980-06-24 1984-11-29 W.C. Heraeus Gmbh, 6450 Hanau Fine wire containing aluminum

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05184788A (en) * 1991-12-19 1993-07-27 Daiken Trade & Ind Co Ltd Drying storage
JPH0716797U (en) * 1993-08-27 1995-03-20 武盛 豊永 High temperature clothes dryer with dehumidifier

Also Published As

Publication number Publication date
FR2499767A1 (en) 1982-08-13
DE3104960A1 (en) 1982-08-26
CH652532A5 (en) 1985-11-15
DE3104960C2 (en) 1987-09-24
JPS57149744A (en) 1982-09-16
FR2499767B3 (en) 1984-01-06
GB2093064A (en) 1982-08-25
GB2093064B (en) 1984-10-31

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