DE3104960A1 - "FINE WIRE" - Google Patents

"FINE WIRE"

Info

Publication number
DE3104960A1
DE3104960A1 DE19813104960 DE3104960A DE3104960A1 DE 3104960 A1 DE3104960 A1 DE 3104960A1 DE 19813104960 DE19813104960 DE 19813104960 DE 3104960 A DE3104960 A DE 3104960A DE 3104960 A1 DE3104960 A1 DE 3104960A1
Authority
DE
Germany
Prior art keywords
copper
weight
fine wire
aluminum
fine
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19813104960
Other languages
German (de)
Other versions
DE3104960C2 (en
Inventor
Fritz Dipl.-Ing. Dr. 6458 Rodenbach Aldinger
Albrecht Dipl.-Phys. Dr. 6454 Bruchköbel Bischoff
Wolfgang 6052 Mühlheim Bonifer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
WC Heraus GmbH and Co KG
Original Assignee
WC Heraus GmbH and Co KG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by WC Heraus GmbH and Co KG filed Critical WC Heraus GmbH and Co KG
Priority to DE19813104960 priority Critical patent/DE3104960A1/en
Priority to DE3153395A priority patent/DE3153395C2/en
Priority to GB8135741A priority patent/GB2093064B/en
Priority to CH79/82A priority patent/CH652532A5/en
Priority to FR8202254A priority patent/FR2499767A1/en
Priority to JP57019859A priority patent/JPS57149744A/en
Publication of DE3104960A1 publication Critical patent/DE3104960A1/en
Application granted granted Critical
Publication of DE3104960C2 publication Critical patent/DE3104960C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/05624—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/4501—Shape
    • H01L2224/45012—Cross-sectional shape
    • H01L2224/45015—Cross-sectional shape being circular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
    • H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485—Material
    • H01L2224/48505—Material at the bonding interface
    • H01L2224/48699—Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
    • H01L2224/487—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48717—Principal constituent of the connecting portion of the wire connector being Aluminium (Al) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950 °C
    • H01L2224/48724—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852—Applying energy for connecting
    • H01L2224/85201—Compression bonding
    • H01L2224/85205—Ultrasonic bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01023—Vanadium [V]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01024—Chromium [Cr]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0103—Zinc [Zn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0104—Zirconium [Zr]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0105—Tin [Sn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01057—Lanthanum [La]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01061—Promethium [Pm]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01075—Rhenium [Re]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01076—Osmium [Os]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/012—Semiconductor purity grades
    • H01L2924/01203—3N purity grades, i.e. 99.9%
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20751—Diameter ranges larger or equal to 10 microns less than 20 microns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20752—Diameter ranges larger or equal to 20 microns less than 30 microns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20753—Diameter ranges larger or equal to 30 microns less than 40 microns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20754—Diameter ranges larger or equal to 40 microns less than 50 microns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20755—Diameter ranges larger or equal to 50 microns less than 60 microns
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/20—Parameters
    • H01L2924/207—Diameter ranges
    • H01L2924/20756—Diameter ranges larger or equal to 60 microns less than 70 microns

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Conductive Materials (AREA)
  • Wire Bonding (AREA)
  • Connections Effected By Soldering, Adhesion, Or Permanent Deformation (AREA)

Description

Hanau, cltMi U. Irin·. 1981 /(M -Pr/i iHanau, cltMi U. Irin ·. 1981 / (M -Pr / i i

W. C. lleraeus GmbH, HanauW. C. lleraeus GmbH, Hanau

PatentanmeldungPatent application

"Feinstdraht""Fine wire"

Die LrTiIi(JiIUg betrifft die» Verwendung eines einen Durchmesner von 0,01 bis 0,06 mm aufweisenden Feinstdrahtes für die Herstellung der Außenanschlüsse von Halbleiter-Bauelementen.The LrTiIi (JiIUg concerns the »use of a one diameter from 0.01 to 0.06 mm fine wire for the production the external connections of semiconductor components.

Es ist bekannt, Feinstdrähte aus Gold, Aluminium oder Aluminiumlegierungen, zum Beispiel AlSiI, AlCu4 (deutsche Offenlegungsschrift 29 29 623) und AlMgI, für die Herstellung der Außenanschlüsse von Halbleiter-Bauelementen zu verwenden.It is known to use fine wires made of gold, aluminum or aluminum alloys, for example AlSiI, AlCu4 (German Offenlegungsschrift 29 29 623) and AlMgI, for the production of the To use external connections of semiconductor components.

Feinstdrähte aus einem Kupfer- oder Kupferlegierungskern (besonders CuSn6) und einem Aluminium- oder Aluminiumlegierungsrnnntel werden in der deutschen Patentanmeldung P 30 23 528.0 I) ei! c Ii rieb on.Fine wires made from a copper or copper alloy core (especially CuSn6) and an aluminum or aluminum alloy shell are described in German patent application P 30 23 528.0 I) egg! c Ii rubbed on.

Während Feinstdrähte aus Aluminium- und Aluminiumlegierungen bevorzugt für die Herstellung Ultraschall-geschweißter Verbindungen nach dem wedge-wedge-Verfahren eingesetzt werden, können die Kern/Mantel-Drähte (Kupfer-Aluminium-Feinstdrähte) sowohl durch Ultraschall-Schweißen nach dem wedge-wedge-Verfahren als auch durch Thermosonic-Schweißen nach dem Verfahren der Nagelkopf-Kontaktierung mit den Halbleiter-Bauelementen und den Anschlußelementen verbunden werden.While fine wires made of aluminum and aluminum alloys are preferred for the production of ultrasonic welded connections are used according to the wedge-wedge process, the core / sheath wires (copper-aluminum fine wires) both by ultrasonic welding according to the wedge-wedge method and by thermosonic welding according to the method the nail head contact with the semiconductor components and the connection elements are connected.

Die mechanische Festigkeit und (Ii 12 elektrische 1. ι; i i. fiili icjke j I. der Verbindung ■ zwischen diesen Kcrn/Hiinli1 1 -Drähten und HnJbleiter-Dauelementen ist·gut. Bei der Ausbildung der Verbindung zwischen dem Draht und aus Kupfer oder einer Kupferlegierung bestehendem Anschlußelement, zum Beispiel einem Systemträyer, . können jedoch Schaden auftreten, die - unter Retr i ubsbedi rifjungen - zu einem Ablösen des Drahtes führen.The mechanical strength and (Ii 12 electrical 1. ι; i i. Fiili icjke j I. of the connection between these Kcrn / Hiinli 1 1 wires and permanent conductor elements is good. In the formation of the connection between the wire and from Copper or a copper alloy connection element, for example a system carrier, can, however, occur damage which - under retrofitting requirements - lead to the wire becoming detached.

Die .Zuverlässigkeit von integrierten Halbleiter-Bauteilen hängt in hohem Maße von den Anschlußdrahten und drr Festigkeit ihrer Verbindung mit den Halbleiter-Bauelementen und den Anschlußelementen ab. So besteht ein Interesse an der Verbesserung der Anschlußdrähte und an der Ifntw i ek 1 uinj neuer, die auch durch die sparsamere Verwendung von I".dtvl m H a 1 I i'ii in drr Halbleiter-Technologie erforderlich wird.The .reliability of integrated semiconductor components depends to a large extent on the connection wires and the strength of their connection with the semiconductor components and the connection elements away. So there is an interest in improving the connecting wires and in the Ifntw i ek 1 uinj newer, the also through the more economical use of I ".dtvl m H a 1 I i'ii in drr Semiconductor technology becomes necessary.

Es ist daher die Aufgabe der Erfindung, einen Feinstdraht mit einem Durchmesser von 0,01 bis 0,06 mm zur Herstellung der Außenanschlusse von Halbleiter-Bauelementen zu finden, der sowohl mit aluminium-beschichteten Silicium-Halbleiter-Bauelementen als auch mit Anschlußelementen aus Kupfer oder Kupferlegierungen eine zuverlässige Verbindung bildet.It is therefore the object of the invention to provide a fine wire with a diameter of 0.01 to 0.06 mm for the production of Find external connections of semiconductor components, both with aluminum-coated silicon semiconductor components as well as with connection elements made of copper or copper alloys forms a reliable connection.

Die Aufgabe wird erfindungsgemäß durch die Verwendung eines Feinstdrahtes aus Kupfer oder einer. Kupferlegierung aus 98 bis 99,9 Gewichts-% Kupfer und 0,1 bis 2 Gowiclits;-?i Beryllium, Zinn, Zink, Silber, Zirkonium, Chrom oder Eisen gelöst.The object is achieved according to the invention through the use of a Fine wire made of copper or a. Copper alloy from 98 bis 99.9% by weight copper and 0.1 to 2 gowiclits; -? I beryllium, Tin, zinc, silver, zirconium, chromium or iron dissolved.

Besonders bewährt haben sich Feinstdrähte aus den Legierungen aus 99,4 Gewichts-% Kupfer und 0,6 Gewichts-% Zinn und aus 99,85 Gewichts-% Kupfer und 0,15 Gewichts-% Zirkonium.Very fine wires made from the alloys of 99.4% by weight of copper and 0.6% by weight of tin and made of have proven particularly useful 99.85% by weight copper and 0.15% by weight zirconium.

Kup ΓϋΓ-Ι eni rrurujen cliuaer Art sind an sich bekannt. Zum Beispiel wrrdon Legierungen des Kupfers mit 1 Gewichts-% Zinn beziehungsweise mit 0,15 Gewichts-% Zirkonium in Dies, Kupfer und Kupfnrlogicrungen in der Technik, 1967, Seite 572, beziehungsweise in der deutschen Ausjegeschrift 10 90 437 beschrieben. Kup ΓϋΓ-Ι eni rrurujen cliuaer kind are known per se. For example wrrdon alloys of copper with 1% by weight of tin or with 0.15% by weight of zirconium in dies, copper and Kupfnrlogicrungen in der Technik, 1967, page 572, respectively described in the German Ausjegeschrift 10 90 437.

Dir Kupfer- und Kupferlegierungsfeinstdrähte werden durch U 1 I. raiifha 1 1 -iic:hu/uiC)(Mi · nach dom u/rulrjo-Vcjrf ahren mit dt;n aus Kupfer odor Kup f (!!'legierungen bestehenden Anschlußelementen verbunden. Die Verbindungsstellen (Bondstellen) Feinstdraht/ Kupfer und Feinstdraht/Kupferlegierung sind frei von Fehlstellen (Risse und dergleichen). Die Abreißfestigkeit der Paare Cu/Cu, CuSnO,6/Cu und CuZrO,15/Cu ist größer als die der Paare Cu/Al und Cu/Cu-Al.The fine copper and copper alloy wires are passed through U 1 I. raiifha 1 1 -iic: hu / uiC) (Mi after dom u / rulrjo-Vcjr proceed with dt; n Copper or Kup f (!! 'alloys existing connection elements tied together. The connection points (bonding points) fine wire / copper and fine wire / copper alloy are free from defects (Cracks and the like). The pull-off strength of the pairs Cu / Cu, CuSnO, 6 / Cu and CuZrO, 15 / Cu is greater than that of the pairs Cu / Al and Cu / Cu-Al.

Das Verbinden der Halbleiter-Bauelemente - zum Beispiel aus mit Aluminium beschichtetem Silicium - geschieht durch Thermosonic-Schweißen nach dem Verfahren der Nagelkopf-Kontaktierung, wobei das Abflammen des Feinstdrahtendes unter Bildung einer Kugel in einer Schutzgas-Atmosphäre erfolgt.The connection of the semiconductor components - for example made of silicon coated with aluminum - is done by thermosonic welding according to the method of nail head contacting, wherein the flaming of the fine wire end to form a Ball takes place in a protective gas atmosphere.

< α.<α.

Dei den erfindungsgemäß verwendeten Feinstdrähten ist - bei einem Durchmesser von 25 Mikrometer - der Durchmesser der sich beim Abflammen bildenden Kugeln kleiner als bei den bekannten Feinstdrähten (AlSiI : 55 Mikrometer, CuZrO,15 : 50 Mikrometer) Dieser Größenunterschied ist, wie ein Vergleich von rasterelektronenmikroskopischen Aufnahmen der Verbindungsstellen zeigt, bei den aufgeschweißten Kugeln noch ausgeprägter.The fine wires used according to the invention are - at a diameter of 25 micrometers - the diameter of the balls formed during flaming is smaller than the known ones Fine wires (AlSiI: 55 micrometers, CuZrO, 15: 50 micrometers) This difference in size is like a comparison of a scanning electron microscope Recordings of the connection points show that the welded-on balls are even more pronounced.

Im Hinblick auf die fortschreitende Miniaturisierung der Leiterbahnen in Halbleiter-Vorrichtungen erweist sich der geringere Durchmesser der sich beim Abflammen bildenden Kugeln als ein weiterer Vorteil der Kupfer- und Kupferlegier uIicj r, Γη i η:; t dy äh t e .In view of the progressive miniaturization of the conductor tracks in semiconductor devices, the smaller diameter of the spheres formed during flaming proves to be a further advantage of the copper and copper alloys uIicj r, Γη i η :; td y uh te.

Während des T he rmosoni e-Scliu/e.i liens nach clem \/cr f'ahrrn der Nagelkopf-Kontaktierumj kann durch VcrüchwciOcn. dci: lein:;tdrähtc mit der Auotri t Lo f läehc der zur Dr riht rüliriiritj und ;i J » Sonotrode dienenden Düoe die Düsenöffnung verstopft werden. Die Kupfer- und Kupfe r 1 eq i r rungs f e j nstdräht ο mimihui - .im Gegensatz' /U solchen au» Aluminium-, Λ 1 um i π i um 1 cm| ι t· iiiikjcmi oder Kupfer-Aluminium - kaum zum Verschweißen ni.il (ItM- Düse, so da(3 die Gefahr des Von; top I" ens der Düsenö f f'n.utnj »uhr gering ist.During the Thermosoni e-Scliu / e.i liens after clem \ / cr f'ahrrn der Nail head contacting can be done by VcrüchwciOcn. dci: lein:; tdrähtc with the auotri t Lo f läehc rüliriiritj to the Dr riht and; i J » The nozzle opening for the sonotrode is blocked. The copper and copper r 1 eq i r rungs f e j nstdräht ο mimihui - .im Opposite '/ U such on aluminum, Λ 1 by i π i by 1 cm | ι t iiiikjcmi or copper-aluminum - hardly for welding ni.il (ItM nozzle, so there (3 the risk of the nozzle opening being low is.

Weiter zeichnen sich die Kupfer- und Kupferlegierungsfeinotdrähte durch eine hohe elektrische Leitfähigkeit, eine im Vergleich zu den Feinstdrähten aus Aluminium, Alumirü umlegierungen oder Kupfer-Aluminium höhere Ermüdungsfestigkeit und eine hohe Zugfestigkeit aus, die nicht nur zu der hohen Abreißfestigkeit, sondern auch zur Ausbildung einer stabilen Drahtschleife (Loop) beiträgt.The copper and copper alloy fine wires are also distinguished due to its high electrical conductivity, an im Compared to the fine wires made of aluminum, aluminum alloys or copper-aluminum higher fatigue strength and a high tensile strength, which not only leads to the high tear strength, but also to the formation of a stable Wire loop (loop) contributes.

IT)IT)

Claims (3)

Hanau, el ι1 η 11 /PL-Pr/Ft I rl) r. J W. C. Heraous GmbH, Hanau Patentanmeldung "Feinotdraht" PatentansprücheHanau, el ι1 η 11 / PL-Pr / Ft I rl) r. J W. C. Heraous GmbH, Hanau patent application "Feinotdraht" patent claims 1. Verwendung eines einen Durchmesser von 0,01 bis 0,06 mm aufweisenden Feinstdrahtes aus Kupfer oder einer Kupferlegierung aus 98 bis 99., 9 Ge\i/ichts-?o Kupfer und 0,1 bis 2 Gewichts-?o Beryllium, Zinn, Zink, Silber, Zirkonium, Chrom oder Eisen für die Herstellung der Außenanschlüsse von Halbleiter-Bauelementen.1. Use of an ultra-fine wire made of copper or a copper alloy with a diameter of 0.01 to 0.06 mm from 98 to 99., 9 Ge \ i / ichts-? o copper and 0.1 to 2 weight - o beryllium, tin, zinc, silver, zirconium, chrome or iron for making the external connections of semiconductor components. 2. Verwendung eines Feinstdrahtes aus 99,4 Gewichts-?^ Kupfer und 0,6 Gewichts-?;; Zinn für den in Anspruch 1 yminnntcMi Zweck.2. Use of a fine wire made of 99.4 weight -? ^ Copper and 0.6 weight -? ;; Tin for the yminnntcMi in claim 1 Purpose. 3. Verwendung eines Feinstdrahtes aus 99,85 Gewichts-?i Kupfer und 0,15 Gewichts-?Ä Zirkonium für den in Anspruch 1 genannten Zweck.3. Use of a fine wire made of 99.85% copper by weight and 0.15% by weight of zirconium for the purpose stated in claim 1.
DE19813104960 1981-02-12 1981-02-12 "FINE WIRE" Granted DE3104960A1 (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
DE19813104960 DE3104960A1 (en) 1981-02-12 1981-02-12 "FINE WIRE"
DE3153395A DE3153395C2 (en) 1981-02-12 1981-02-12 Use of a very fine wire made of a copper/tin alloy
GB8135741A GB2093064B (en) 1981-02-12 1981-11-26 External connectors or terminals
CH79/82A CH652532A5 (en) 1981-02-12 1982-01-07 USE OF A FINEST WIRE FOR MAKING EXTERNAL TERMINALS OF SEMICONDUCTOR COMPONENTS.
FR8202254A FR2499767A1 (en) 1981-02-12 1982-02-11 APPLICATION OF AN EXTRA-FINE METAL WIRE TO MAKE EXTERNAL CONNECTIONS OF SEMICONDUCTOR COMPONENTS
JP57019859A JPS57149744A (en) 1981-02-12 1982-02-12 Extrafine wire

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19813104960 DE3104960A1 (en) 1981-02-12 1981-02-12 "FINE WIRE"

Publications (2)

Publication Number Publication Date
DE3104960A1 true DE3104960A1 (en) 1982-08-26
DE3104960C2 DE3104960C2 (en) 1987-09-24

Family

ID=6124622

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19813104960 Granted DE3104960A1 (en) 1981-02-12 1981-02-12 "FINE WIRE"

Country Status (5)

Country Link
JP (1) JPS57149744A (en)
CH (1) CH652532A5 (en)
DE (1) DE3104960A1 (en)
FR (1) FR2499767A1 (en)
GB (1) GB2093064B (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3514253A1 (en) * 1984-04-19 1985-10-31 Hitachi, Ltd., Tokio/Tokyo SEMICONDUCTOR DEVICE
DE3606224A1 (en) * 1985-03-01 1986-09-04 Mitsubishi Denki K.K., Tokio/Tokyo BALL TYPE BOND WIRE FOR SEMICONDUCTOR DEVICES AND METHOD FOR THEIR PRODUCTION
DE3610587A1 (en) * 1985-03-27 1986-11-06 Mitsubishi Kinzoku K.K., Tokio/Tokyo WIRE SUITABLE FOR BONDING SEMICONDUCTOR DEVICES AND METHOD FOR THE PRODUCTION THEREOF
EP1357197A1 (en) * 2002-01-07 2003-10-29 Senju Metal Industry Co., Ltd. Minute copper balls and a method for their manufacture
DE102018122574A1 (en) * 2018-09-14 2020-03-19 Kme Germany Gmbh & Co. Kg Copper alloy
DE102019113082A1 (en) * 2019-05-17 2020-11-19 Infineon Technologies Ag SEMICONDUCTOR HOUSING AND METHOD OF FORMING A SEMICONDUCTOR HOUSING
DE112017003058B4 (en) * 2016-06-20 2021-06-10 Nippon Micrometal Corporation Copper alloy bond wires for semiconductor components

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5149917A (en) * 1990-05-10 1992-09-22 Sumitomo Electric Industries, Ltd. Wire conductor for harness
JPH05184788A (en) * 1991-12-19 1993-07-27 Daiken Trade & Ind Co Ltd Drying storage
JPH0716797U (en) * 1993-08-27 1995-03-20 武盛 豊永 High temperature clothes dryer with dehumidifier
JP2501303B2 (en) * 1994-04-11 1996-05-29 株式会社東芝 Semiconductor device
JP2501305B2 (en) * 1994-06-06 1996-05-29 株式会社東芝 Semiconductor device
JP2501306B2 (en) * 1994-07-08 1996-05-29 株式会社東芝 Semiconductor device
DE19606116A1 (en) * 1996-02-20 1997-08-21 Berkenhoff Gmbh Electrical contact elements
TWI287282B (en) 2002-03-14 2007-09-21 Fairchild Kr Semiconductor Ltd Semiconductor package having oxidation-free copper wire
KR101016158B1 (en) 2005-01-05 2011-02-17 신닛테츠 마테리알즈 가부시키가이샤 Bonding wire for semiconductor device

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1090437B (en) * 1956-08-14 1960-10-06 Nippert Electric Products Comp Process for improving the electrical and mechanical properties of copper-zirconium alloys
DE1127000B (en) * 1956-10-31 1974-04-11
DE2929623A1 (en) * 1979-07-21 1981-01-29 Heraeus Gmbh W C FINELINE WIRE FROM AN ALUMINUM ALLOY
DE3011661A1 (en) * 1980-03-26 1981-10-01 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Connecting wires for semiconductor device - using wires of copper and tin or similar alloy and connecting to aluminium electrodes
DE3023528A1 (en) 1980-06-24 1982-01-21 W.C. Heraeus Gmbh, 6450 Hanau FINE WIRE FOR CONTACTING SEMICONDUCTOR COMPONENTS

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5678357U (en) * 1979-11-09 1981-06-25

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1090437B (en) * 1956-08-14 1960-10-06 Nippert Electric Products Comp Process for improving the electrical and mechanical properties of copper-zirconium alloys
DE1127000B (en) * 1956-10-31 1974-04-11
DE2929623A1 (en) * 1979-07-21 1981-01-29 Heraeus Gmbh W C FINELINE WIRE FROM AN ALUMINUM ALLOY
DE3011661A1 (en) * 1980-03-26 1981-10-01 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Connecting wires for semiconductor device - using wires of copper and tin or similar alloy and connecting to aluminium electrodes
DE3023528A1 (en) 1980-06-24 1982-01-21 W.C. Heraeus Gmbh, 6450 Hanau FINE WIRE FOR CONTACTING SEMICONDUCTOR COMPONENTS

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
DE-B.: Dies Kurt, Kupfer und Kupferlegierungen in der Technik, Springer-Verlag, Berlin/Heidelberg/New York, 1967, S. 191-206, 214-233, 254-404, 638-651, 704-723, 756-772 *
DE-B: Dies, Kurt: Kupfer und Kupferlegierungen in der Technik, Springer-Verlag, Berlin/Heidelberg/ New York, 1967, S. 504-577
DE-Z.: Umschau, Bd. 74, H. 17, 1974, S. 535-541 *

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3514253A1 (en) * 1984-04-19 1985-10-31 Hitachi, Ltd., Tokio/Tokyo SEMICONDUCTOR DEVICE
DE3606224A1 (en) * 1985-03-01 1986-09-04 Mitsubishi Denki K.K., Tokio/Tokyo BALL TYPE BOND WIRE FOR SEMICONDUCTOR DEVICES AND METHOD FOR THEIR PRODUCTION
US4705204A (en) * 1985-03-01 1987-11-10 Mitsubishi Denki Kabushiki Kaisha Method of ball forming for wire bonding
DE3610587A1 (en) * 1985-03-27 1986-11-06 Mitsubishi Kinzoku K.K., Tokio/Tokyo WIRE SUITABLE FOR BONDING SEMICONDUCTOR DEVICES AND METHOD FOR THE PRODUCTION THEREOF
EP1357197A1 (en) * 2002-01-07 2003-10-29 Senju Metal Industry Co., Ltd. Minute copper balls and a method for their manufacture
US6799711B2 (en) 2002-01-07 2004-10-05 Senju Metal Industry Co., Ltd. Minute copper balls and a method for their manufacture
DE112017003058B4 (en) * 2016-06-20 2021-06-10 Nippon Micrometal Corporation Copper alloy bond wires for semiconductor components
DE112017008353B3 (en) 2016-06-20 2022-09-29 Nippon Micrometal Corporation Copper alloy bonding wires for semiconductor devices
DE102018122574A1 (en) * 2018-09-14 2020-03-19 Kme Germany Gmbh & Co. Kg Copper alloy
DE102018122574B4 (en) * 2018-09-14 2020-11-26 Kme Special Products Gmbh Use of a copper alloy
DE102019113082A1 (en) * 2019-05-17 2020-11-19 Infineon Technologies Ag SEMICONDUCTOR HOUSING AND METHOD OF FORMING A SEMICONDUCTOR HOUSING
US11715719B2 (en) 2019-05-17 2023-08-01 Infineon Technologies Ag Semiconductor package and method of forming a semiconductor package

Also Published As

Publication number Publication date
GB2093064A (en) 1982-08-25
FR2499767A1 (en) 1982-08-13
GB2093064B (en) 1984-10-31
CH652532A5 (en) 1985-11-15
JPS57149744A (en) 1982-09-16
DE3104960C2 (en) 1987-09-24
JPH0237095B2 (en) 1990-08-22
FR2499767B3 (en) 1984-01-06

Similar Documents

Publication Publication Date Title
DE3104960A1 (en) &#34;FINE WIRE&#34;
DE3023528C2 (en) Fine wire containing aluminum
DE3645066C2 (en)
DE19743767B4 (en) A method of manufacturing a semiconductor die package having a surface mount semiconductor die and a semiconductor die package having a semiconductor die fabricated therefrom
DE4131413C2 (en) Bonding process for semiconductor chips
DE7602014U1 (en) Superconductor
DE2910959A1 (en) STRUCTURED VOLTAGE RELIEF BUFFER MADE OF COPPER AND SEMI-CONDUCTOR COMPONENTS CONTAINING THIS BUFFER
DE102010031993A1 (en) Core-ribbon wire
DE102022204082A1 (en) Weld body manufacturing process and weld body
DE1777158A1 (en) Method and device for the production of copper-clad aluminum rods and wires
DE3300549A1 (en) PRINTED CIRCUIT BOARD AND METHOD FOR THEIR PRODUCTION
DE4232745A1 (en) Wire for ultrasonic bonding - has wire of ductile metal such as gold or copper coated with thin layer of harder material
DE3514253A1 (en) SEMICONDUCTOR DEVICE
DE2747087C2 (en) Electrical contact and method of making it
DE6606361U (en) ELECTRICAL CONNECTION BETWEEN TWO CONDUCTORS, AT LEAST ONE OF WHICH IS MADE OF A HARD SUPRALCONDUCTIVE MATERIAL
DE3704200C2 (en)
DE3153395C2 (en) Use of a very fine wire made of a copper/tin alloy
DE4433503C2 (en) Method of manufacturing a semiconductor device
DE3621917A1 (en) Method for producing electrical connections inside semiconductor components and electrical connection for semiconductor components
EP0020857B1 (en) Method and device for manufacturing a planar semiconductor element
DE102006011352A1 (en) Method for producing a wire connection
DE3011661C2 (en) Semiconductor arrangement with bonding wires
DD200954A1 (en) MICROWIRE OF ALUMINUM FOR WIRE BONDING
DE79725C (en)
WO1998021780A2 (en) A connection between two contacts and a process for producing such a connection

Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
8172 Supplementary division/partition in:

Ref country code: DE

Ref document number: 3153395

Format of ref document f/p: P

Q171 Divided out to:

Ref country code: DE

Ref document number: 3153395

AH Division in

Ref country code: DE

Ref document number: 3153395

Format of ref document f/p: P

D2 Grant after examination
AH Division in

Ref country code: DE

Ref document number: 3153395

Format of ref document f/p: P

8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: W. C. HERAEUS GMBH & CO. KG, 63450 HANAU, DE