JPH0230189B2 - - Google Patents

Info

Publication number: JPH0230189B2
Authority: JP; Japan
Prior art keywords: signal charge; storage region; transfer means; charge transfer; region
Prior art date: 1980-10-02
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

JP55138026A

Other languages

English (en)

Japanese (ja)

Other versions

JPS5762557A (en

Inventor

Shinichi Teranishi

Yasuo Ishihara

Hiromitsu Shiraki

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

NEC Corp

Original Assignee

Nippon Electric Co Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1980-10-02

Filing date

1980-10-02

Publication date

1990-07-04

1980-10-02 Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd

1980-10-02 Priority to JP55138026A priority Critical patent/JPS5762557A/ja

1981-08-31 Priority to US06/297,759 priority patent/US4484210A/en

1982-04-15 Publication of JPS5762557A publication Critical patent/JPS5762557A/ja

1990-07-04 Publication of JPH0230189B2 publication Critical patent/JPH0230189B2/ja

Status Granted legal-status Critical Current

Links

238000003384 imaging method Methods 0.000 claims description 26
239000000758 substrate Substances 0.000 claims description 26
238000009825 accumulation Methods 0.000 claims description 23
239000002344 surface layer Substances 0.000 claims description 13
238000000034 method Methods 0.000 claims description 6
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
239000004065 semiconductor Substances 0.000 claims description 4
206010047571 Visual impairment Diseases 0.000 description 10
238000009826 distribution Methods 0.000 description 7
238000010586 diagram Methods 0.000 description 6
230000000694 effects Effects 0.000 description 5
239000010410 layer Substances 0.000 description 4
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
229910052710 silicon Inorganic materials 0.000 description 3
239000010703 silicon Substances 0.000 description 3
230000015556 catabolic process Effects 0.000 description 2
239000012535 impurity Substances 0.000 description 2
230000007935 neutral effect Effects 0.000 description 2
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
229910052782 aluminium Inorganic materials 0.000 description 1
238000006243 chemical reaction Methods 0.000 description 1
230000005669 field effect Effects 0.000 description 1
238000005286 illumination Methods 0.000 description 1
238000005036 potential barrier Methods 0.000 description 1
235000012239 silicon dioxide Nutrition 0.000 description 1
239000000377 silicon dioxide Substances 0.000 description 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14831—Area CCD imagers

Landscapes

Physics & Mathematics (AREA)
Engineering & Computer Science (AREA)
Power Engineering (AREA)
Electromagnetism (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Light Receiving Elements (AREA)
Solid State Image Pick-Up Elements (AREA)
Transforming Light Signals Into Electric Signals (AREA)

JP55138026A 1980-09-05 1980-10-02 Solid state image pickup device and driving method therefor Granted JPS5762557A (en)

Priority Applications (2)

Application Number	Priority Date	Filing Date	Title
JP55138026A JPS5762557A (en)	1980-10-02	1980-10-02	Solid state image pickup device and driving method therefor
US06/297,759 US4484210A (en)	1980-09-05	1981-08-31	Solid-state imaging device having a reduced image lag

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP55138026A JPS5762557A (en)	1980-10-02	1980-10-02	Solid state image pickup device and driving method therefor

Publications (2)

Publication Number	Publication Date
JPS5762557A JPS5762557A (en)	1982-04-15
JPH0230189B2 true JPH0230189B2 (ko)	1990-07-04

Family

ID=15212308

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP55138026A Granted JPS5762557A (en)	1980-09-05	1980-10-02	Solid state image pickup device and driving method therefor

Country Status (1)

Country	Link
JP (1)	JPS5762557A (ko)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS58187082A (ja) *	1982-04-26	1983-11-01	Matsushita Electric Ind Co Ltd	固体撮像装置の駆動方法
JPS6273662A (ja) *	1985-09-26	1987-04-04	Toshiba Corp	固体撮像装置の製造方法
JPS62124771A (ja) *	1985-11-25	1987-06-06	Sharp Corp	固体撮像装置
JPH06105782B2 (ja) *	1985-12-20	1994-12-21	株式会社東芝	固体撮像装置
JP2517882B2 (ja) *	1986-12-23	1996-07-24	ソニー株式会社	固体撮像装置
JPH02280377A (ja) *	1989-04-20	1990-11-16	Matsushita Electron Corp	固体撮像装置およびその駆動方法
JP2595138B2 (ja) *	1990-06-14	1997-03-26	三菱電機株式会社	固体撮像素子及びその製造方法
JP3284986B2 (ja)	1998-12-04	2002-05-27	日本電気株式会社	光電変換素子およびそれを用いた固体撮像装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5386516A (en) *	1977-01-10	1978-07-31	Hitachi Ltd	Solid state pickup device
JPS5437422A (en) *	1977-08-29	1979-03-19	Toshiba Corp	Solid state pickup device

1980
- 1980-10-02 JP JP55138026A patent/JPS5762557A/ja active Granted

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS5386516A (en) *	1977-01-10	1978-07-31	Hitachi Ltd	Solid state pickup device
JPS5437422A (en) *	1977-08-29	1979-03-19	Toshiba Corp	Solid state pickup device

Also Published As

Publication number	Publication date
JPS5762557A (en)	1982-04-15

Publication	Publication Date	Title
US4484210A (en)	1984-11-20	Solid-state imaging device having a reduced image lag
JPH0410785B2 (ko)	1992-02-26
JPS5917581B2 (ja)	1984-04-21	固体撮像装置
JPS5819080A (ja)	1983-02-03	固体撮像素子
US4688098A (en)	1987-08-18	Solid state image sensor with means for removing excess photocharges
KR101788890B1 (ko)	2017-10-20	전하 인티그레이션을 가지는 멀티리니어 이미지 센서
JPS6216599B2 (ko)	1987-04-13
JPH0230189B2 (ko)	1990-07-04
EP0453530B1 (en)	1996-01-31	Solid-state image sensor
KR0139314B1 (ko)	1998-05-15	고체촬상장치 및 그 구동방법
US5774182A (en)	1998-06-30	Solid-state image sensor device with pixel array structure of interline transfer CCD image sensor
JPH0453149B2 (ko)	1992-08-25
JP2004087963A (ja)	2004-03-18	固体撮像素子、固体撮像装置、および固体撮像素子の駆動方法
JPH0424870B2 (ko)	1992-04-28
US4321614A (en)	1982-03-23	Radiant energy sensor with blooming control
JPS6161589B2 (ko)	1986-12-26
JPH0689998A (ja)	1994-03-29	固体撮像装置
US5047862A (en)	1991-09-10	Solid-state imager
KR950002194B1 (ko)	1995-03-14	프레임 트랜스퍼방식의 ccd 영상센서
JPH031871B2 (ko)	1991-01-11
JPH0421351B2 (ko)	1992-04-09
JPS5917585B2 (ja)	1984-04-21	固体撮像装置
JP3087718B2 (ja)	2000-09-11	固体撮像装置
EP0029367A2 (en)	1981-05-27	Solid state imaging apparatus
JPS63155759A (ja)	1988-06-28	イメ−ジセンサ