JPH02286358A - Light emitting device - Google Patents
Light emitting deviceInfo
- Publication number
- JPH02286358A JPH02286358A JP1107761A JP10776189A JPH02286358A JP H02286358 A JPH02286358 A JP H02286358A JP 1107761 A JP1107761 A JP 1107761A JP 10776189 A JP10776189 A JP 10776189A JP H02286358 A JPH02286358 A JP H02286358A
- Authority
- JP
- Japan
- Prior art keywords
- array
- light emitting
- substrate
- nucleation
- emitting element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 48
- 230000003287 optical effect Effects 0.000 claims abstract description 19
- 238000010899 nucleation Methods 0.000 claims description 36
- 230000006911 nucleation Effects 0.000 claims description 35
- 239000013078 crystal Substances 0.000 claims description 22
- 238000000034 method Methods 0.000 abstract description 16
- 230000002349 favourable effect Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 239000007789 gas Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000010365 information processing Effects 0.000 description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000010884 ion-beam technique Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000004943 liquid phase epitaxy Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000000927 vapour-phase epitaxy Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910001424 calcium ion Inorganic materials 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000001182 laser chemical vapour deposition Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001741 metal-organic molecular beam epitaxy Methods 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007736 thin film deposition technique Methods 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
- G09F13/00—Illuminated signs; Luminous advertising
- G09F13/20—Illuminated signs; Luminous advertising with luminescent surfaces or parts
- G09F13/22—Illuminated signs; Luminous advertising with luminescent surfaces or parts electroluminescent
Landscapes
- Exposure Or Original Feeding In Electrophotography (AREA)
- Illuminated Signs And Luminous Advertising (AREA)
- Led Devices (AREA)
- Dot-Matrix Printers And Others (AREA)
- Printers Or Recording Devices Using Electromagnetic And Radiation Means (AREA)
Abstract
Description
【発明の詳細な説明】
（Ｍ東上の利用分野）
本発明は発光素子と光学系とを基板上に集積した発光装
置に関し、とくに、元プリンタのプリンタヘッド、情報
処理用光源−むして使用する発光装置に関するものであ
る。[Detailed Description of the Invention] (Field of Application of M Tojo) The present invention relates to a light-emitting device in which a light-emitting element and an optical system are integrated on a substrate, and particularly to a printer head of a former printer, a light source for information processing, etc. This invention relates to a light emitting device.
（従来の技術）
従来、ＩＪＤプリンタなどの発光装置として用いられる
ＬＥＤアレイ２３は第６図に示されるようにロッドレン
ズアレイ２４と組合わされて使用されるので、組立てに
際しては光軸調整を行なう必要があり、このための機械
設備を必要とする。また、ＩＪＤアレイ２３と感光ドラ
ム２５の位置関係はロット０レンズアレイ２４を挾んで
いる関係で、ロッＰし／ズの共役長（２０〜４０闘）だ
け対称に離されている。(Prior Art) Conventionally, an LED array 23 used as a light emitting device in an IJD printer or the like is used in combination with a rod lens array 24 as shown in FIG. 6, so it is necessary to adjust the optical axis during assembly. There is a need for mechanical equipment for this purpose. Further, the positional relationship between the IJD array 23 and the photosensitive drum 25 is such that they sandwich the lot 0 lens array 24, and are symmetrically separated by the conjugate length (20 to 40 degrees) of the lot 0 lens array 24.
（発明が解決しようとする課題）
しかしながら、上述の従来例ではＬＥＤアレイ２３とロ
ッドレンズアレイ２４との光軸調整に手間がかかり、ま
た、ロッドレンズアレイ２４のためにＬＥＤアレイ２３
と感光ドラム２５との間の距離は一定値以下には縮める
ことができない。(Problems to be Solved by the Invention) However, in the conventional example described above, it takes time and effort to adjust the optical axes of the LED array 23 and the rod lens array 24.
The distance between the photosensitive drum 25 and the photosensitive drum 25 cannot be reduced below a certain value.
（発明の目的）
本発明は上記事情にもとづいてなされたもので、マイク
ロレンズアレイを基板に対してモノリシックに形成する
と共に、反対面に発光素子アレイを集積化によってモノ
リシックに形成することで、機械的な光軸調整が不要で
光軸方向への所要距離を大幅にＩＥｉ縮できる発光装置
を提供しようとするものである。(Object of the Invention) The present invention has been made based on the above circumstances, and is capable of mechanically forming a microlens array monolithically on a substrate and monolithically forming a light emitting element array on the opposite surface by integration. The present invention aims to provide a light emitting device that does not require optical axis adjustment and can significantly reduce the required distance in the optical axis direction.
（課題を解決するための手段）
このため１本発明では発光素子と光学系とを基板上に集
積した発光装置であって、上記基板には非晶質透明基板
を用い、該基板の一面にマイクロレンズアレイを、また
、上記マイクロレンズアレイの光軸に発光位置を合わせ
て発光素子アレイを上記マイクロレンズアレイとは反対
側に位置して上記基板の他面にそれぞれモノリシックに
形成している。(Means for Solving the Problems) For this reason, the present invention provides a light emitting device in which a light emitting element and an optical system are integrated on a substrate, in which an amorphous transparent substrate is used as the substrate, and one surface of the substrate is A microlens array is monolithically formed on the other surface of the substrate, and a light emitting element array is located on the opposite side of the microlens array with the light emitting position aligned with the optical axis of the microlens array.
そして、要すれば、上記発光素子プレイは、マイクロレ
ンズアレイを形成した非晶質透明基板の他面を非核形成
面とするか、あるいは非晶質透明基板の他面に反射膜を
形成し、その反射膜表面を非核形成面として、非核形成
面に核形成密度が十分大きくかつ単一の核だけが成長す
る程度に十分微細な核形成面を形成し、結晶成長処理に
よシ核形成面上の単一核から単結晶を成長させ、その単
結晶に発光素子を形成している。And, if necessary, the light emitting element play includes making the other surface of the amorphous transparent substrate on which the microlens array is formed a non-nucleation surface, or forming a reflective film on the other surface of the amorphous transparent substrate, The surface of the reflective film is used as a non-nucleation surface, and a nucleation surface with sufficiently high nucleation density and fine enough to grow only a single nucleus is formed on the non-nucleation surface, and a nucleation surface is formed on the non-nucleation surface by crystal growth processing. A single crystal is grown from the single nucleus above, and a light emitting element is formed in that single crystal.
（作用）
したがりて、発光索子アレイとマイクロレンズアレイと
の相対的な元軸整合は集積時に行なわれるのみで、安定
したものとなる。このため、上記発光装置を用いて光プ
リンタを構成した場合、機械的な光軸調整を組立てに際
して行なう必要がなく、また、感光ドラムに対する距離
も短縮でき、装置の小形化にも有利となる。また、情報
処理用光源として用いるために、基板に対して２次元的
に発光素子アレイおよびこれに対応するマイクロレンズ
プレイを配設する構成では、全体の小型化が充分に達成
できる。(Function) Therefore, the relative axis alignment between the light emitting strand array and the microlens array is only performed at the time of integration, and is stable. Therefore, when an optical printer is constructed using the above light emitting device, there is no need to perform mechanical optical axis adjustment during assembly, and the distance to the photosensitive drum can also be shortened, which is advantageous for downsizing the device. Furthermore, in order to use the device as a light source for information processing, a structure in which a light emitting element array and a corresponding microlens play are two-dimensionally disposed on a substrate can sufficiently reduce the overall size.
（実施例）
以下、本発明の実施例を図面を参照して具体的に説明す
る。(Example) Hereinafter, an example of the present invention will be specifically described with reference to the drawings.
第１図は非晶質透明基板１上にマイクロレンズアレイ２
を形成すると共に、上記マイクロレンズアレイ２のある
側とは反対側の面において、上記基板１上に発光素子ア
レイ３を集積化した発光装置を示している。ここでは非
晶質透明基板１の一面は非核形成面になっており、非核
形成面上に核形成密度が十分大きくかつ単一の核だけが
成長する程度に十分微細な核形成面を形成し、結晶成長
処理により核形成面上の単一核から単結晶を成長させ、
その単結晶上に発光素子を形成するのである。このよう
に基板ｌ上にモノリシックにマイクロレンズアレイ２お
よび発光素子アレイ３を集積化する点が本発明の特徴で
ある。Figure 1 shows a microlens array 2 on an amorphous transparent substrate 1.
A light emitting device is shown in which a light emitting element array 3 is integrated on the substrate 1 on the surface opposite to the side where the microlens array 2 is present. Here, one surface of the amorphous transparent substrate 1 is a non-nucleation surface, and a nucleation surface is formed on the non-nucleation surface that has a sufficiently high nucleation density and is sufficiently fine that only a single nucleus grows. , a single crystal is grown from a single nucleus on the nucleation surface by a crystal growth process,
A light emitting element is formed on the single crystal. The feature of the present invention is that the microlens array 2 and the light emitting element array 3 are monolithically integrated on the substrate l in this manner.
なお、非晶質透明基板１としては石英ガラスなど、後工
程の結晶成長処理のグロセス温度に耐えられる耐熱性の
材料を用いる。Note that the amorphous transparent substrate 1 is made of a heat-resistant material such as quartz glass that can withstand the growth temperature of the crystal growth process in the subsequent process.
マイクロレンズアレイの材料としては、たとえば、石英
ガラス基板（屈折率１．４６）に対して、より屈折率の
大きいＳｌ、Ｎ４（屈折率２．０）ｆｔレンズ材料とし
て用いることができる。また、マイクロレンズアレイの
材料も結晶成長処理のグロセス温度に耐えられることが
望ましい。このようなマイクロレンズアレイは、レンズ
形状に適する膜厚分布を持つ九薄膜の堆積法を用いて形
成するとよく、それには基板加熱型のレーデＣＶＤ法（
レーデ気相成長法）が適当である。また、ウニｙトエッ
チングによって、形状を整えてもよい。As a material for the microlens array, for example, a ft lens material such as Sl or N4 (refractive index 2.0) having a larger refractive index than a quartz glass substrate (refractive index 1.46) can be used. It is also desirable that the material of the microlens array can withstand the growth temperature of the crystal growth process. Such a microlens array is preferably formed using a nine-thin film deposition method with a film thickness distribution suitable for the lens shape.
Rede vapor phase growth method) is suitable. Alternatively, the shape may be adjusted by unit etching.
非晶質基板１上に■、■族化合物半導体の単結晶を成長
させるには選択核形成法（特開昭６３−１０７０１６）
を用いるとよい。これは結晶成長させる材料の核形成密
度が小さい非核形成面４上に、核形成密度が大きい非核
形成面５を微細に形成した基板ｌを用意する（第２図（
ａ）参照）。Selective nucleation method for growing a single crystal of a group ■, group compound semiconductor on an amorphous substrate 1 (Japanese Patent Application Laid-Open No. 107016/1983)
It is recommended to use This is done by preparing a substrate l in which a non-nucleation surface 5 with a high nucleation density is finely formed on a non-nucleation surface 4 with a low nucleation density of the material to be crystal grown (see Fig. 2).
a)).
次にＭＯＣＶＤ法（Ｍ＠ｔａｌ Ｏｒｇａｈｉｃ Ｃｈ
＠ｍ１ｅａｌＶａｐｏｕｒＤａｐｏｓｌ ｔｌｏｎ ：
有機金属気相成長法）、クロライドＶＰＥ法（Ｃｈｌｏ
ｒｉｄ＠Ｖａｐｏｕｒ Ｐｈｒａａｅ Ｅｐｉｔａｘｙ
：クロライド気相エピタキシー） 、 ＬＰＥ法（Ｌｌ
ｑｕｌｄＰｈｒａｓ＠Ｅｐｌｔａｘｙ ：液相エピタキ
シー） ％ＭＢＥ法（Ｍｏ１ｓｃｕｌａｒ Ｂｅａｍ
Ｅｐｔｔａｘｙ ：分子線エピタキシー）、ＭＯＭＢＥ
法（Ｍｅｔａｌ Ｏｒｇａｎｉｃ Ｍｏ１ｓｃｕｌａｒ
ＢａａｍＥｐｉｔａｘｙ：有機金属分子線エピタキシ
ー）などの結晶成長法を用いて、非核形成面４上には核
が成長せず、核形成面５上にのみ選択的に核が成長する
条件で結晶成長させると、単一核６が核形成面５上に形
成される（第２図（ｂ）参照）ことを指すのであって、
更に結晶を成長させると、単結晶は非核形成面４上まで
拡大され、大きな単結晶７が生成できる（第２図（ａ）
参照）。Next, MOCVD method (M@tal Organic Ch
@m1ealVapourDaposl tron:
metal organic vapor phase epitaxy), chloride VPE method (Chlo
rid@Vapour Phraae Epitaxy
:chloride gas phase epitaxy), LPE method (Ll
quldPhras@Epltaxy: Liquid phase epitaxy) %MBE method (Mo1scular beam
Epttaxy: Molecular beam epitaxy), MOMBE
Law (Metal Organic Mo1scal
When crystal growth is performed using a crystal growth method such as BaamEpitaxy (organometallic molecular beam epitaxy) under conditions where nuclei do not grow on the non-nucleation surface 4 and nuclei selectively grow only on the nucleation surface 5. , refers to the formation of a single nucleus 6 on the nucleation surface 5 (see FIG. 2(b)),
When the crystal is further grown, the single crystal is expanded to the non-nucleation surface 4, and a large single crystal 7 can be generated (Fig. 2(a)).
reference).
なお、単結晶７上に形成する発光素子としては透明基板
１にほぼ垂直に基板側へ発光する面発光ＬＥＤ 、面発
光レーデであればどのような構造のものにしてもよい。The light emitting element formed on the single crystal 7 may be of any structure as long as it is a surface emitting LED or a surface emitting radar that emits light almost perpendicularly to the transparent substrate 1 toward the substrate.
このような構成では、第１図のように、発光素子アレイ
３から基板側へ発光した光は透明基板１を経由してマイ
クロレンズアレイ２で集光される。In such a configuration, as shown in FIG. 1, light emitted from the light emitting element array 3 toward the substrate side passes through the transparent substrate 1 and is focused by the microlens array 2.
上述の発光素子アレイ３における単結晶材料としては、
ＧａＡｓ、 ＡｂｍＡｓ、 ＩｎＰ、 ＩｎＧａＡｓＰ
、 ＩｎＧａＡｔＰ。As the single crystal material in the above-mentioned light emitting element array 3,
GaAs, AbmAs, InP, InGaAsP
, InGaAtP.
ＧａＡｍＰ、 ＧａＰ、 ＧａＮなどのｍ−ｖ族化合物
半導体や、ＺｎＳθ、 ＺｎＳなどの１−Ｖｌ族化合物
半導体を用いることができる。MV group compound semiconductors such as GaAmP, GaP, and GaN, and 1-Vl group compound semiconductors such as ZnSθ and ZnS can be used.
次に１本発明に係る発光装置の具体的な実例を述べる。Next, a specific example of a light emitting device according to the present invention will be described.
（実施例１）
先う、石英ガラス基板１上に耐熱性マイクロレンズアレ
イ２を形成する（第３図（ａ）参照）。ここでは石英ガ
ラス基板１は厚さｌ闘であり、この上に、レーデＣＶＤ
法によってスポット状にＳＩＮ Ｍ膜を、１００．ａｍ
間隔でライン状に１００個並べて形成することでマイク
ロレンズアレイ２を得る。使用レーザは波長１０，６μ
ｍの炭酸ガスレーザ（出力１０Ｗ）であり、Ｚｎ５ｓレ
ンズによりて絞ってからＺｎ５ｅ九学窓を通して光ＣＶ
Ｄ装置に導入してｂる。(Example 1) First, a heat-resistant microlens array 2 is formed on a quartz glass substrate 1 (see FIG. 3(a)). Here, the quartz glass substrate 1 has a thickness of 1, and on top of this, a Rede CVD
The SIN M film was applied in spots by the method of 100. am
A microlens array 2 is obtained by arranging 100 microlenses in a line shape at intervals. The laser used has a wavelength of 10.6μ
m carbon dioxide laser (output 10W), which is focused by a Zn5s lens and then passed through a Zn5e nine-way window to produce an optical CV.
Introduce it into the D device.
ソースガスとしてＦｉ、５ＩＨ２Ｃｔ２を１０ ＳＣＣ
Ｍ 、 ＮＨ，を５０ＳＣＣＭ流し、圧力５ Ｔｏｒｒ
で、１スポツトにつき２ｍ１ｎ間、照射し、薄膜を形成
する。中心膜厚はは約２μｍで、なだらかな膜厚分布を
持ち、レンズ機能を持つ。10 SCC of Fi, 5IH2Ct2 as source gas
M, NH, was flowed at 50 SCCM, and the pressure was 5 Torr.
Then, each spot is irradiated for 2 m1n to form a thin film. The central film thickness is approximately 2 μm, has a gentle film thickness distribution, and has a lens function.
このようにして、マイクロレンズアレイ２を形成した石
英ガラス基板ｌを裏返して、集束イオンビーム装置によ
りてＧ息イオンを４０ ＫａＶ、 ２ＸＩＯ／ｃｌｆＬ
”のドーズで、１βｍ角の微細領域に打込む。このＧａ
イオンの打込み領域５は上記マイクロレンズアレイ２の
光軸に対応して１１００ａ間隔でライン状に１００個並
べて形成される（第３図（ｂ）参照）。In this way, the quartz glass substrate l on which the microlens array 2 was formed was turned over, and G ions were irradiated with a focused ion beam device at 40 KaV and 2XIO/clfL.
” into a fine area of 1βm square.
100 ion implantation regions 5 are formed in a line at intervals of 1100a, corresponding to the optical axis of the microlens array 2 (see FIG. 3(b)).
次に、Ｇａイオンの打込み領域５を表にしてＭＯＣＶＤ
装置に基板ｌｆｔセットし、ソースガスとしてトリメチ
ルガリウム、トリメチルアルミニウム、アルシン、ドー
パントガスとしてシラン、キャリヤガスとして水素を流
し、基板温度７５０℃、圧力５ Ｑ Ｔｏｒｒ 、 Ｖ
／Ｉｎ比＝８０の条件でｎ型ＡＬｘＧａ１−、Ａｍ（Ｘ
＝０．６５）の成長を行なう。この場合、石英ガラス５
ｔＯ２基板ｌの表面４は非核形成面として動き、Ｇ＆イ
オンの打込領域の表面が核形成面として働くので、その
微細な打込み領域５から直径的５μｍのＡｂｍＡｓの単
結晶粒子８が成長する（第３図（０）参照）。Next, MOCVD is performed with the Ga ion implantation region 5 facing up.
A substrate lft was set in the apparatus, trimethylgallium, trimethylaluminum, arsine was supplied as a source gas, silane was used as a dopant gas, and hydrogen was supplied as a carrier gas.The substrate temperature was 750°C and the pressure was 5Q Torr, V.
/In ratio = 80, n-type ALxGa1-, Am(X
=0.65). In this case, quartz glass 5
The surface 4 of the tO2 substrate l acts as a non-nucleation surface, and the surface of the G& ion implantation region acts as a nucleation surface, so AbmAs single crystal particles 8 with a diameter of 5 μm grow from the fine implantation region 5 ( (See Figure 3 (0)).
次いで、ガスの流量、ドーパントガス（ｐ釜のときはノ
エチル亜鉛）を切換えて、ｎ型ＡｔｘＧａ１−ｘＡｍ（
ｘ＝０．８）層９を、ノンドープのＡ７ｘＧ畠１−、Ａ
Ｍ（Ｘ＝０．３５）活性層１０を、ｐｉＪ ＡｔｘＧａ
ｌ−ｘＡｓ （ｘ＝０．８）層１１を、ｐ型Ａ４Ｇａ１
−ｘＡｓ （ｘ＝ ０．６５ ）層１２を順次成長させ
、直径約２０μｍの粒子７にする（第３図（ｄ）および
（６）参照）。Next, by changing the gas flow rate and dopant gas (noethylzinc in the case of a p-type pot), n-type AtxGa1-xAm (
x=0.8) Layer 9 is made of non-doped A7xG Hatake1-, A
M (X=0.35) active layer 10, piJ AtxGa
The l-xAs (x=0.8) layer 11 is made of p-type A4Ga1
-xAs (x=0.65) layers 12 are successively grown into particles 7 with a diameter of about 20 μm (see FIGS. 3(d) and (6)).
次に、この粒子７の表面をラッピングおよびポリッシン
グによシ平坦化しく第３図（ｆ）および−）参照）、反
射ＥＸ （Ａｕ／ＳＩＯ□） １３、正電極（ＡｕＺｎ
）１４、負電極（ＡｕＧ・）１５などを集積して、ダ
ブルへテロ構造のＬＥＤとする（第３図（ｈ）および（
１）参照）。Next, the surfaces of the particles 7 are flattened by lapping and polishing (see FIGS. 3(f) and -)), reflection EX (Au/SIO□) 13, and positive electrode (AuZn
) 14, negative electrode (AuG・) 15, etc. are integrated to form a double heterostructure LED (Fig. 3 (h) and (
1)).
このような構成ではＬＥＤの活性層１０から放出された
光は石英ガラス１を透過してマイクロレンズアレイ２で
集光される。In such a configuration, light emitted from the active layer 10 of the LED passes through the quartz glass 1 and is focused by the microlens array 2.
（実施例２）
別の実施例としては第４図および第５図に示すような構
造の集積化が基板１上になされるが、ここでは、２次元
面発光レーデアレイと２次元マイクロレンズアレイとが
形成される。(Example 2) As another example, the structures shown in FIGS. 4 and 5 are integrated on the substrate 1, but here, a two-dimensional surface emitting radar array and a two-dimensional microlens array are integrated. is formed.
先づ、厚さ１ｊＩｍの石英ガラス基板１上に実施例１と
同様にしてレーザＣＶＤ法で５ＩＮＲ［のマイクロレン
ズアレイ２を１００μｍピッチで８×８個の２次元配列
で６４個形成する。First, 64 microlens arrays 2 of 5 INR were formed in a two-dimensional array of 8×8 at a pitch of 100 μm using the laser CVD method in the same manner as in Example 1 on a quartz glass substrate 1 with a thickness of 1 jIm.
次に、マイクロレンズアレイが形成され次層板１を裏返
して、上面にＡｕ膜１６を電子線加熱によって蒸着し、
次いで５ＩＮ４膜１７を減圧ＣＶＤ法で全面に堆積し、
基板側反射膜とする。Next, after the microlens array is formed, the next layer plate 1 is turned over, and an Au film 16 is deposited on the upper surface by electron beam heating.
Next, a 5IN4 film 17 is deposited on the entire surface by low pressure CVD method,
Use as a reflective film on the substrate side.
次に８１ 、Ｎ４膜１７上に、実施例１と同様にして集
束イオンビーム装置でＧ１イオンを１ ｘＡｍ角で打込
み、更に基板をＭＯＣＶＤ装置にセットして、選択核形
成法（先述）で、単結晶を成長する。ここではＳｌ、Ｎ
４膜１７が非核形成面となり、Ｃａイオン打込み領域の
表面が核形成面となる。しかして、実施例１と同様に、
ソースガス ）”−ノ４ントガスの流量を変え、最初に
ｎ ｍＧａＡｓ層１８１次いでｎ型、＾、ｔｘＧ畠１−
ｘＡｓ （ｘ＝０．３５ ）層１９、ノンドープのＡｔ
ｘＧａｌ−ＸＡｓ （ｘ ＝ ０．０５ ）活性４２０
．ｐ型ＡｔｘＧａ１−ｘＡｓ （ｘ ＝ ０．３５ ）
層２” ％ｐ型ＧａＡａ層２２を順次成長する。Next, 81, G1 ions were implanted onto the N4 film 17 at a angle of 1 x Am using a focused ion beam device in the same manner as in Example 1, and then the substrate was set in an MOCVD device, and by the selective nucleation method (described earlier), Grow single crystals. Here, Sl, N
4 film 17 becomes a non-nucleation surface, and the surface of the Ca ion implantation region becomes a nucleation surface. However, similar to Example 1,
Source gas )"-4 The flow rate of the source gas is changed, first the nm GaAs layer 181, then the n-type, ^, txG Hatake 1-
xAs (x=0.35) layer 19, non-doped At
xGal-XAs (x = 0.05) activity 420
．． p-type AtxGa1-xAs (x = 0.35)
Layer 2'' % p-type GaAa layer 22 is grown sequentially.
次に、実施例１と同様に成長した結晶を平坦化し、反射
膜（Ａｕ ／８１０□） 、正電極（ＡｕＺｎ）１４、
負電極（ＡｕＧｅ ） １５などを形成してダブルへテ
ロ構造の面発光レーザとする。Next, the grown crystal was flattened in the same manner as in Example 1, and a reflective film (Au/810□), a positive electrode (AuZn) 14,
A negative electrode (AuGe) 15 and the like are formed to form a double heterostructure surface emitting laser.
（発明の効果）
本発明は以上詳述したようになり、非晶質透明基板上に
発光素子アレイ、マイクロレンズアレイを集積化してい
るので、発光素子アレ・イとマイクロレンズアレイの機
構的な元軸調整が不要となり、より安定した光プリンタ
や情報処理装置が構成できる。また、各別の発光素子プ
レイおよびマイクロレンズアレイを組合わせ使用する場
合よりも全体の小型化が実現できる。更に、非晶質基板
を用いるから、長尺の１次元集積化発光索子アレイや、
大面積の２次元集積化発元素子プレイの製造が可能であ
る。(Effects of the Invention) As described in detail above, the present invention integrates a light emitting element array and a microlens array on an amorphous transparent substrate. This eliminates the need for base axis adjustment, allowing more stable optical printers and information processing devices to be configured. Furthermore, the overall size can be reduced compared to the case where separate light emitting element plays and microlens arrays are used in combination. Furthermore, since an amorphous substrate is used, it is possible to create a long one-dimensional integrated luminescent cord array,
It is possible to manufacture a large-area two-dimensionally integrated power source element play.
ｇｔ図は本発明の一実施例を示す断面図、第２図（ａ）
〜（ｃ）は選択核形成法を説明するための図、第３図（
ａ）〜（１）は本発明の一具体例全示す１次元集積化Ｌ
ＥＤアレイの製作工程を示す図、第４図および第５図は
本発明の別の具体例を示す２次元集積化レーデアレイの
断面図および平面図、第６図は従来例のＬＥＤ ｆリン
クの構成図でおる。
１・・・非晶質透明基板、２・・・マイクロレンズアレ
イ、３・・・発光素子アレイ、４・・・非核形成面、５
・・・基体、６・・・単一核、７・・・単結晶。gt diagram is a sectional view showing one embodiment of the present invention, FIG. 2(a)
~(c) is a diagram for explaining the selective nucleation method, Figure 3 (
a) to (1) are one-dimensional integrated L showing one specific example of the present invention.
4 and 5 are cross-sectional views and plan views of a two-dimensional integrated radar array showing another example of the present invention, and FIG. 6 is a diagram showing the configuration of a conventional LED f-link. Illustrated. DESCRIPTION OF SYMBOLS 1... Amorphous transparent substrate, 2... Microlens array, 3... Light emitting element array, 4... Non-nucleation surface, 5
... Substrate, 6... Single nucleus, 7... Single crystal.
Claims (3)
であって、上記基板には非晶質透明基板を用い、該基板
の一面にマイクロレンズアレイを、また、この面とは反
対側の面に上記マイクロレンズアレイの光軸に発光位置
を合わせて発光素子アレイをそれぞれモノリシックに形
成していることを特徴とする発光装置。(1) A light emitting device in which a light emitting element and an optical system are integrated on a substrate, in which an amorphous transparent substrate is used as the substrate, a microlens array is arranged on one side of the substrate, and a microlens array is arranged on the opposite side of the substrate. A light-emitting device characterized in that a light-emitting element array is monolithically formed on a side surface with light-emitting positions aligned with the optical axis of the microlens array.
成した非晶質透明基板の他面を非核形成面として、ここ
に核形成密度が十分大きく、且つ、単一の核だけが成長
する程度の微細な核形成面を形成し、この核形成面から
単結晶を成長させて発光素子を構成している請求項１の
発光装置。(2) The above-mentioned light emitting element array has the other surface of the amorphous transparent substrate on which the microlens array is formed as a non-nucleation surface, and the nucleation density is sufficiently high here, and the microlens is small enough that only a single nucleus grows. 2. The light emitting device according to claim 1, wherein a light emitting element is constructed by forming a nucleation surface and growing a single crystal from this nucleation surface.
形成した非晶質透明基板の他面に反射膜を形成し、該反
射膜の表面を非核形成面として、ここに核形成密度が十
分大きく、且つ、単一の核だけが成長する程度の微細な
核形成面を形成し、この核形成面から単結晶を成長させ
て発光素子を構成している請求項１の発光装置。(3) The light emitting element array has a reflective film formed on the other surface of the amorphous transparent substrate on which the microlens array is formed, and the surface of the reflective film is used as a non-nucleation surface, and the nucleation density is sufficiently high here. 2. The light emitting device according to claim 1, further comprising forming a fine nucleation surface on which only a single nucleus grows, and forming a light emitting element by growing a single crystal from this nucleation surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1107761A JPH02286358A (en) | 1989-04-28 | 1989-04-28 | Light emitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1107761A JPH02286358A (en) | 1989-04-28 | 1989-04-28 | Light emitting device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02286358A true JPH02286358A (en) | 1990-11-26 |
Family
ID=14467324
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1107761A Pending JPH02286358A (en) | 1989-04-28 | 1989-04-28 | Light emitting device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02286358A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05169721A (en) * | 1991-12-19 | 1993-07-09 | Sharp Corp | Image forming device |
| JPH05238059A (en) * | 1992-02-28 | 1993-09-17 | Kyocera Corp | Image device |
| JPH0699612A (en) * | 1992-09-18 | 1994-04-12 | Toshiba Corp | Aligner |
| US5475417A (en) * | 1991-10-25 | 1995-12-12 | Rohm Co., Ltd. | LED array printhead and method of adjusting light luminance of same |
| JP2002196571A (en) * | 2000-12-26 | 2002-07-12 | Canon Inc | Image forming device |
| WO2014109158A1 (en) * | 2013-01-11 | 2014-07-17 | 株式会社ブイ・テクノロジー | Optical interconnection device |
| CN110361947A (en) * | 2018-04-09 | 2019-10-22 | 柯尼卡美能达株式会社 | Optical writing device and image forming apparatus |
-
1989
- 1989-04-28 JP JP1107761A patent/JPH02286358A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5475417A (en) * | 1991-10-25 | 1995-12-12 | Rohm Co., Ltd. | LED array printhead and method of adjusting light luminance of same |
| JPH05169721A (en) * | 1991-12-19 | 1993-07-09 | Sharp Corp | Image forming device |
| JPH05238059A (en) * | 1992-02-28 | 1993-09-17 | Kyocera Corp | Image device |
| JPH0699612A (en) * | 1992-09-18 | 1994-04-12 | Toshiba Corp | Aligner |
| JP2002196571A (en) * | 2000-12-26 | 2002-07-12 | Canon Inc | Image forming device |
| JP4574006B2 (en) * | 2000-12-26 | 2010-11-04 | キヤノン株式会社 | Image forming apparatus |
| WO2014109158A1 (en) * | 2013-01-11 | 2014-07-17 | 株式会社ブイ・テクノロジー | Optical interconnection device |
| CN104919731A (en) * | 2013-01-11 | 2015-09-16 | 株式会社V技术 | Optical interconnection device |
| CN110361947A (en) * | 2018-04-09 | 2019-10-22 | 柯尼卡美能达株式会社 | Optical writing device and image forming apparatus |
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