JPH02271684A - Tunnel type josephson junction element - Google Patents
Tunnel type josephson junction elementInfo
- Publication number
- JPH02271684A JPH02271684A JP1094540A JP9454089A JPH02271684A JP H02271684 A JPH02271684 A JP H02271684A JP 1094540 A JP1094540 A JP 1094540A JP 9454089 A JP9454089 A JP 9454089A JP H02271684 A JPH02271684 A JP H02271684A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- lower electrode
- tunnel barrier
- oxide
- tunnel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000004888 barrier function Effects 0.000 claims abstract description 28
- 239000002887 superconductor Substances 0.000 claims abstract description 21
- 239000000470 constituent Substances 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 5
- 239000000463 material Substances 0.000 abstract description 6
- 238000000034 method Methods 0.000 abstract description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 5
- 239000001301 oxygen Substances 0.000 abstract description 5
- 229910052760 oxygen Inorganic materials 0.000 abstract description 5
- 230000008569 process Effects 0.000 abstract description 3
- 230000006866 deterioration Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 20
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- 229910052593 corundum Inorganic materials 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 229910001845 yogo sapphire Inorganic materials 0.000 description 4
- 229910052697 platinum Inorganic materials 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 239000010949 copper Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910014454 Ca-Cu Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、上下電極共に酸化物超伝導体であるトンネル
型ジョセフソン接合素子に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to a tunnel-type Josephson junction element in which both the upper and lower electrodes are made of oxide superconductor.
（従来の技術）
ジョセフソン接合で構成される論理回路や記憶回路は半
導体素子の回路に比べて消費電力が小さく、高速で動作
するという大きな利点がある。近年発見された酸化物超
伝導体は超伝導転位温度Ｔｃが１００に前後と高く、こ
の値に相当する大きなエネルギーギャップ値をもつ。そ
のため上下電極共に酸化物超伝導体を用いたジョセフソ
ン接合では、液体窒素温度（７７，３Ｋ）など従来の超
伝導体にない高温での動作や高速動作が期待される。(Prior Art) Logic circuits and memory circuits constructed using Josephson junctions have the great advantage of consuming less power and operating at high speed compared to circuits using semiconductor elements. Oxide superconductors discovered in recent years have a high superconducting transition temperature Tc of around 100, and a large energy gap value corresponding to this value. Therefore, Josephson junctions that use oxide superconductors for both the upper and lower electrodes are expected to operate at high temperatures and high speeds that conventional superconductors do not have, such as liquid nitrogen temperatures (77.3 K).
従来、酸化物超伝導体を電極材料とするトンネル型ジョ
セフソン接合素子に関しては、日中らによって１９８８
年に発表された第２０凹円体素子・材料ゴンファレンス
予稿集（Ｅｘｔｅｎｄｅｄ Ａｂｓｔｒａｃｔ ｏｆ
ｔｈｅ ２０ｔｈＣｏｎｆｅｒｅｎｃｅ ｏｎ ５ｏｌ
ｉｄ ５ｔａｔｅ Ｄｅｖｉｃｅ ａｎｄ Ｍａｔｅｒ
ｉａｌｓ）の４５５〜４５８ページの論文などがある。Conventionally, tunnel-type Josephson junction devices using oxide superconductors as electrode materials were developed by Nichi et al. in 1988.
Extended Abstract of the 20th Concave Elements and Materials Conference, published in
the 20thConference on 5ol
id 5tate Device and Mater
ials) on pages 455-458.
ここで提案されたジョセフソン接合素子は、第３図に示
すように、基板３１上に形成してＹＢａ２Ｃｕ３Ｏｘ膜
でなる下部電極３２と、この下部電極３２上に形成した
厚さ数１０人のＡｌ２Ｏ３膜でなるトンネル障壁３３と
、このトンネル障壁３３を介して下部電極３２と対向し
て形成した白金（ｐｔ）膜または銀（Ａｇ）膜でなる上
部電極３４とで構成される。As shown in FIG. 3, the Josephson junction device proposed here includes a lower electrode 32 formed on a substrate 31 and made of a YBa2Cu3Ox film, and an Al2O3 film with a thickness of several tens of layers formed on the lower electrode 32. It is composed of a tunnel barrier 33 made of a film, and an upper electrode 34 made of a platinum (PT) film or a silver (Ag) film, which is formed to face the lower electrode 32 with the tunnel barrier 33 interposed therebetween.
この素子は次のような工程で製造される。まず、チタン
酸ストロンチウム（ＳｒＴｉ０３Ｘ１００）単結晶から
なる基板３１上に、１Ｏ−２Ｔｏｒｒの酸素雰囲気中で
イツトリウム（Ｙ）、バリウム（Ｂａ）、銅（Ｃｕ）を
共蒸着し、厚さ１０００人のＹＢａ２Ｃｕ３Ｏｘ膜を成
長する。引き続き、この膜を２００Ｔｏｒｒの酸素雰囲
気で熱処理してａｓ−ｇｒｏｗｎで不足している酸素を
供給し、高温超伝導性の下部電極３２を形成する。次に
、下部電極３２上に厚さ６０人のＡｌ２Ｏ３を蒸着して
トンネル障壁３３を形成した後、さらに厚さ１００ＯＡ
のｐｔまたはＡｇを蒸着して上部電極３４を形成してジ
ョセフソン接合素子の基本構造を完成する。下部電極３
２及び上部電極３４のパターニングは蒸着時に金属マス
クを用いる方法で行なう。This device is manufactured through the following steps. First, yttrium (Y), barium (Ba), and copper (Cu) were co-evaporated onto a substrate 31 made of strontium titanate (SrTi03 Grow a membrane. Subsequently, this film is heat-treated in an oxygen atmosphere of 200 Torr to supply insufficient oxygen in as-grown form, thereby forming a high-temperature superconducting lower electrode 32. Next, after forming a tunnel barrier 33 by vapor depositing Al2O3 to a thickness of 60 OA on the lower electrode 32, a further thickness of 100 OA is formed.
The basic structure of the Josephson junction device is completed by depositing PT or Ag to form the upper electrode 34. Lower electrode 3
Patterning of the upper electrode 2 and the upper electrode 34 is performed by using a metal mask during vapor deposition.
（発明が解決しようとする課題）
従来例は、上部電極にノーマル金属を用いているが、窒
素温度以上で動作するジョセフソン接合素子を実現する
ためには、上下電極共に酸化物超伝導体を用いなければ
ならない。高温超伝導性の酸化物超伝導体膜の作製には
成膜時あるいは成膜後に６００°Ｃ以上の高温処理プロ
セスが不可欠であるため、良好な接合特性を得るために
は特に上部電極形成時におけるトンネル障壁材料の熱的
安定性および相互拡散防止効果が重要となる。従来例の
ように、トンネル障壁にＡｌ２Ｏ３を用いる場合には、
下部電極の構成元素であるＹの方がＡｌよりも酸素物と
して安定であるため、Ａｌ２Ｏ３が分解してその絶縁性
が失われる可能性がある。また、電極を構成する酸化物
超伝導体とトンネル障壁材料との相互拡散により、接合
界面に低Ｔｃ層やノーマル層からな゛る遷移領域が形成
され易い。その結果、ジョセフソン接合素子のギャップ
電圧の現象やサブギャップリーク電流の増加といった問
題を生じる。一般に酸化物超伝導体のコヒーレンス長（
モ）の値は故人から２０人と小さいため、接合界面にお
ける超伝導特性の変化は重大である。(Problem to be solved by the invention) In conventional examples, normal metal is used for the upper electrode, but in order to realize a Josephson junction element that operates above the nitrogen temperature, oxide superconductor is used for both the upper and lower electrodes. must be used. To create a high-temperature superconducting oxide superconductor film, a high-temperature treatment process of 600°C or higher is essential during or after film formation. Thermal stability and interdiffusion prevention effect of tunnel barrier materials are important. When using Al2O3 for the tunnel barrier as in the conventional example,
Since Y, which is a constituent element of the lower electrode, is more stable as an oxygen substance than Al, there is a possibility that Al2O3 will decompose and its insulating properties will be lost. Further, due to interdiffusion between the oxide superconductor constituting the electrode and the tunnel barrier material, a transition region consisting of a low Tc layer or a normal layer is likely to be formed at the junction interface. As a result, problems such as a gap voltage phenomenon of the Josephson junction element and an increase in sub-gap leakage current occur. In general, the coherence length of oxide superconductors (
Since the value of (mo) is as small as 20 from the deceased, the change in superconducting properties at the junction interface is significant.
本発明の目的は、このような従来の欠点を取り除いたト
ンネル型ジョセフソン接合素子を提供することにある。SUMMARY OF THE INVENTION An object of the present invention is to provide a tunnel-type Josephson junction device that eliminates such conventional drawbacks.
（課題を解決するための手段）
本発明によれば、基板上に形成した酸化物超伝導体でな
る下部電極と、この下部電極上に形成したトンネル障壁
と、このトンネル障壁を介して前記下部電極と対向して
形成した酸化物超伝導体でなる上部電極とを有するトン
ネル型ジョセフソン接合素子において、前記トンネル障
壁が前記下部電極の構成元素のうち酸素一原子当たりの
生成エネルギーが最小の元素の酸化物でなることを特徴
とするトンネル型ジョセフソン接合素子が得られる。(Means for Solving the Problem) According to the present invention, a lower electrode made of an oxide superconductor formed on a substrate, a tunnel barrier formed on the lower electrode, and a lower electrode formed on the lower electrode through the tunnel barrier. In a tunnel-type Josephson junction element having an upper electrode made of an oxide superconductor formed opposite to an electrode, the tunnel barrier is an element having the lowest production energy per oxygen atom among the constituent elements of the lower electrode. A tunnel-type Josephson junction device is obtained, which is characterized by being made of an oxide of.
（作用）
本発明では、トンネル障壁に下部電極の構成元素で、し
かも酸素一原子当たりの生成エネルギーが最小の元素の
酸化物を用いる。このトンネル障壁は熱的に安定であり
、容易には下部電極や上部電極の酸化物超伝導体とは反
応しない。また、仮に高温プロセスでトンネル障壁材料
の一部が電極との間で相互拡散しても、トンネル障壁と
電極は同一元素で構成されているため接合界面での超伝
導特性の劣化を生じにくい。(Function) In the present invention, an oxide of an element that is a constituent element of the lower electrode and has the minimum production energy per oxygen atom is used for the tunnel barrier. This tunnel barrier is thermally stable and does not easily react with the oxide superconductor of the lower and upper electrodes. Furthermore, even if part of the tunnel barrier material interdiffuses with the electrode during a high-temperature process, the superconducting properties at the junction interface are unlikely to deteriorate because the tunnel barrier and the electrode are composed of the same element.
（実施例）
本発明のトンネル型ジョセフソン接合素子の実施例を図
面を参照して説明する。このトンネル型ジョセフソン接
合素子は第１図に示すように、５ｒＴｉ０３基板１１上
に形成したＹＢａ２Ｃｕ３Ｏｘなどの下部電極１２と、
この下部電極１２上に形成したＹ２Ｏ３などのトンネル
障壁１３と、さらにこの上に形成したＹＢａ２Ｃｕ３Ｏ
ｘなどの上部電極１４とで構成される。下部電極１２と
上部電極１４の膜厚は３０００人、トンネル障壁１３の
膜厚は数人〜３０人である。下部電極１２及び上部電極
１４に用いたＹＢａ２Ｃｕ３Ｏｘの構成下その酸化物は
Ｙ２Ｏ３、ＢａＯ２、ＣｕＯで、それぞれに対する酸素
一原子当たりの生成エネルギーは一１５２ｋｃａｌ／ｍ
ａ１゜７６ｋｃａｌ／ｍｏｌ、−３８ｋｃａｌ／ｍｏｌ
である。従って、本実施例ではトンネル障壁１３にＹ２
Ｏ３を用いた。Ｙ２Ｏ３膜はＹＢａ２Ｃｕ３Ｏｘ膜には
さまれた（１η造でも熱的に安定であるため、両者の界
面における反応は起こりにくい。従って従来の構造に比
べ、接合界面での低Ｔｃ層やノーマル層による遷移領域
幅を軽減できるため、酸化物超伝導体本来の値に近いギ
ャップ電圧をもちサブギャップリークの小さいトンネル
型ジョセフソン接合素子が得られる。(Example) An example of the tunnel type Josephson junction device of the present invention will be described with reference to the drawings. As shown in FIG. 1, this tunnel type Josephson junction element includes a lower electrode 12 made of YBa2Cu3Ox or the like formed on a 5rTi03 substrate 11,
A tunnel barrier 13 such as Y2O3 formed on this lower electrode 12 and YBa2Cu3O formed further on this
x and the upper electrode 14. The thickness of the lower electrode 12 and the upper electrode 14 is 3000, and the thickness of the tunnel barrier 13 is several to 30. In the structure of YBa2Cu3Ox used for the lower electrode 12 and upper electrode 14, the oxides thereof are Y2O3, BaO2, and CuO, and the production energy per oxygen atom for each is -152 kcal/m
a1゜76kcal/mol, -38kcal/mol
It is. Therefore, in this embodiment, the tunnel barrier 13 has Y2
O3 was used. The Y2O3 film is sandwiched between the YBa2Cu3Ox films (even the 1η structure is thermally stable, so reactions at the interface between the two are less likely to occur. Therefore, compared to the conventional structure, the transition due to the low Tc layer or normal layer at the bonding interface is Since the region width can be reduced, a tunnel-type Josephson junction device with a gap voltage close to the original value of the oxide superconductor and low sub-gap leakage can be obtained.
本実施例では、電極を構成する酸化物超伝導体としてＹ
Ｂａ２Ｃｕ３Ｏｘ膜を用いた場合について説明したが、
Ｂ１−８ｒ−Ｃａ−Ｃｕ−０やＴｌ−Ｂａ−Ｃａ−Ｃｕ
−○などの他の酸化物超伝導体を用いてもよい。例えば
、このＢｉ系やＴｌ系に対するトンネル障壁としては、
酸素一原子当たりの生成エネルギーか最も小さいＣａの
酸化物（ＣａＯ）が望ましい。In this example, Y was used as the oxide superconductor constituting the electrode.
Although the case where a Ba2Cu3Ox film was used was explained,
B1-8r-Ca-Cu-0 and Tl-Ba-Ca-Cu
Other oxide superconductors such as −○ may also be used. For example, as a tunnel barrier for Bi-based and Tl-based systems,
Ca oxide (CaO) having the lowest production energy per oxygen atom is desirable.
次に本発明のトンネル型ジョセフソン接合素子の製造方
法を図面を用いて説明する。Next, a method for manufacturing a tunnel-type Josephson junction device according to the present invention will be explained with reference to the drawings.
まず、Ｙ−Ｂａ−Ｃｕ−０焼結体ターゲットを用いたス
パッタ法により、５ｒＴｉ○３（１００）単結晶基板２
１上に厚さ３０００人のＹＢａ２Ｃｕ３Ｏｘ膜を被着し
、引き続きこの膜上に厚さ約１０人のＹ２Ｏ３膜を被着
する。この２層膜を通常のりソグラフィ技術と加工技術
を用いてパターニングし、下部電極２２とトンネル障壁
２３を形成する（第２図（ａ））。ＹＢａ２Ｃｕ３Ｏｘ
膜のスパッタ時の雰囲気はＡｒ−２０％０２、基板温度
は５５０〜７５０’Ｃである。First, a 5rTi○3 (100) single crystal substrate 2 was prepared by sputtering using a Y-Ba-Cu-0 sintered target.
A YBa2Cu3Ox film with a thickness of 3000 thick is deposited on top of 1, followed by a Y2O3 film about 10 thick on top of this film. This two-layer film is patterned using ordinary lithography and processing techniques to form a lower electrode 22 and a tunnel barrier 23 (FIG. 2(a)). YBa2Cu3Ox
The atmosphere during sputtering of the film was Ar-20%02, and the substrate temperature was 550 to 750'C.
Ｙ２Ｏ３膜のスパッタ条件はＡｒ−５０％ｏ２、基板温
度１００°Ｃである。次に、トンネル障壁２３上の接合
となる領域にレジストマスクを設けた後、厚さ２００Ｏ
ＡのＹ２Ｏ３膜をスパッタし、リフトオフしてスペーサ
２４を形成する（第２図（ｂ））。次に、第２図（ａ）
の下部電極２２と同様な方法で厚さａｏｏｏＡのＹＢａ
２Ｃｕ３Ｏｘ膜を被着、パターニング上部電極２５を形
成する（第２図（Ｃ））。本実施例では、上部及び下部
電極にスパッタ法により被着したＹＢａ２Ｃｕ３Ｏｘを
用いた、蒸着法やＣＶＤ法など他の成膜技術を用いても
よいし、Ｙ系薄膜の代りＢｉ系やＴｌ系などの多々の酸
化物超伝導薄膜を用いることもできる。The sputtering conditions for the Y2O3 film were Ar-50% O2 and a substrate temperature of 100°C. Next, after providing a resist mask on the region on the tunnel barrier 23 that will become the junction, a resist mask with a thickness of 200
The Y2O3 film of A is sputtered and lifted off to form a spacer 24 (FIG. 2(b)). Next, Figure 2(a)
YBa of thickness aoooA is formed in the same manner as the lower electrode 22 of
A 2Cu3Ox film is deposited and a patterned upper electrode 25 is formed (FIG. 2(C)). In this example, YBa2Cu3Ox is deposited by sputtering on the upper and lower electrodes. Other film forming techniques such as vapor deposition or CVD may also be used, and instead of the Y-based thin film, Bi-based, Tl-based, etc. Various oxide superconducting thin films can also be used.
（発明の効果）
本発明によれば、上下電極に酸化物超伝導体を場合でも
、電極とトンネル障壁との反応で生じる低Ｔｃ層やノー
マル層を介することはなく、酸化物超伝導体本来のギャ
ップ電圧をもちサブギャップリークの小さいトンネル型
ジョセフソン接合素子が得られる。(Effects of the Invention) According to the present invention, even when oxide superconductors are used in the upper and lower electrodes, the oxide superconductors are naturally A tunnel-type Josephson junction device with a gap voltage of 1 and a small sub-gap leakage can be obtained.
第１図は本発明のトンネル型ジョセフソン接合素子を示
す断面図、第２図は本発明のトンネル型ジョセフソン接
合素子の製造方法を工程順に示す断面図、第３図は従来
のトンネル型ジョセフソン接合素子を示す断面図である
。
図において、１１，２１，３１．は基板、１２，２２，
３２．は下部電極、１３，２３，３３．はトンネル障壁
、１４，２５．３４は上部電極、２４はスペーサである
。FIG. 1 is a cross-sectional view showing a tunnel-type Josephson junction device of the present invention, FIG. 2 is a cross-sectional view showing the manufacturing method of a tunnel-type Josephson junction device of the present invention in the order of steps, and FIG. 3 is a cross-sectional view showing a conventional tunnel-type Josephson junction device. FIG. 2 is a cross-sectional view showing a Son junction element. In the figure, 11, 21, 31. is the substrate, 12, 22,
32. are lower electrodes, 13, 23, 33. is a tunnel barrier, 14, 25, and 34 are upper electrodes, and 24 is a spacer.
Claims (1)
の下部電極上に形成したトンネル障壁と、このトンネル
障壁を介して前記下部電極と対向して形成した酸化物超
伝導体でなる上部電極とを有するトンネル型ジョセフソ
ン接合素子において、前記トンネル障壁が前記下部電極
の構成元素のうち酸素一原子当りの生成エネルギーが最
小の元素の酸化物でなることを特徴とするトンネル型ジ
ョセフソン接合素子。A lower electrode made of an oxide superconductor formed on a substrate, a tunnel barrier formed on this lower electrode, and an upper part made of an oxide superconductor formed opposite to the lower electrode via this tunnel barrier. A tunnel type Josephson junction element having an electrode, wherein the tunnel barrier is made of an oxide of an element having the lowest production energy per oxygen atom among the constituent elements of the lower electrode. element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1094540A JPH02271684A (en) | 1989-04-13 | 1989-04-13 | Tunnel type josephson junction element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1094540A JPH02271684A (en) | 1989-04-13 | 1989-04-13 | Tunnel type josephson junction element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02271684A true JPH02271684A (en) | 1990-11-06 |
Family
ID=14113149
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1094540A Pending JPH02271684A (en) | 1989-04-13 | 1989-04-13 | Tunnel type josephson junction element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02271684A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01106481A (en) * | 1987-10-20 | 1989-04-24 | Fujitsu Ltd | Superconductive material structure |
-
1989
- 1989-04-13 JP JP1094540A patent/JPH02271684A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01106481A (en) * | 1987-10-20 | 1989-04-24 | Fujitsu Ltd | Superconductive material structure |
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