JPH02267933A - Wiring in a viahole and its formation - Google Patents
Wiring in a viahole and its formationInfo
- Publication number
- JPH02267933A JPH02267933A JP8861989A JP8861989A JPH02267933A JP H02267933 A JPH02267933 A JP H02267933A JP 8861989 A JP8861989 A JP 8861989A JP 8861989 A JP8861989 A JP 8861989A JP H02267933 A JPH02267933 A JP H02267933A
- Authority
- JP
- Japan
- Prior art keywords
- conductor layer
- via hole
- wiring
- viahole
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000015572 biosynthetic process Effects 0.000 title description 2
- 239000004020 conductor Substances 0.000 claims abstract description 34
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 11
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 9
- 239000004065 semiconductor Substances 0.000 claims abstract description 8
- 239000010937 tungsten Substances 0.000 claims abstract description 8
- 238000000034 method Methods 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 claims description 9
- 238000001947 vapour-phase growth Methods 0.000 claims description 4
- 239000002994 raw material Substances 0.000 claims description 3
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 claims description 2
- 230000001603 reducing effect Effects 0.000 abstract description 3
- 229910000838 Al alloy Inorganic materials 0.000 abstract 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- 239000010410 layer Substances 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 6
- 239000001257 hydrogen Substances 0.000 description 6
- 229910052739 hydrogen Inorganic materials 0.000 description 6
- 238000006722 reduction reaction Methods 0.000 description 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- YNLAOSYQHBDIKW-UHFFFAOYSA-M diethylaluminium chloride Chemical compound CC[Al](Cl)CC YNLAOSYQHBDIKW-UHFFFAOYSA-M 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 229910001020 Au alloy Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 239000003353 gold alloy Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000003197 catalytic effect Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000002496 gastric effect Effects 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 1
- WNUPENMBHHEARK-UHFFFAOYSA-N silicon tungsten Chemical compound [Si].[W] WNUPENMBHHEARK-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 210000002784 stomach Anatomy 0.000 description 1
- VOITXYVAKOUIBA-UHFFFAOYSA-N triethylaluminium Chemical compound CC[Al](CC)CC VOITXYVAKOUIBA-UHFFFAOYSA-N 0.000 description 1
- MCULRUJILOGHCJ-UHFFFAOYSA-N triisobutylaluminium Chemical compound CC(C)C[Al](CC(C)C)CC(C)C MCULRUJILOGHCJ-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、半導体集積回路におけるＭ間配線のためのビ
ア、ホール内配線との形成方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a method for forming vias and in-hole wiring for M wiring in a semiconductor integrated circuit.
半導体素子の高速化、大容量化に伴ない、素子の集積度
をより向上させることが急務となっている。このため、
高度な微細プロセス技術が要求され、例えば１６Ｍビッ
トＤＲＡＭではサブミクロンの精度が必要となる。微細
プロセス技術の中でも、特に微細配線技術は素子サイズ
に直接影響を与えることから重要度を増している。素子
の高速性を上げるには、配線抵抗の低減が不可欠であり
、その一つの解決策として、近年多層金属配線が用いら
れるようになった。この場合、層間配線のためにビアホ
ール内の配線が必要になる。2. Description of the Related Art As semiconductor devices increase in speed and capacity, there is an urgent need to further improve the degree of integration of devices. For this reason,
Advanced microprocessing technology is required; for example, 16 Mbit DRAM requires submicron precision. Among microprocessing technologies, microwiring technology in particular is becoming increasingly important because it directly affects device size. In order to increase the speed of devices, it is essential to reduce wiring resistance, and multilayer metal wiring has recently come to be used as one solution. In this case, wiring within the via hole is required for interlayer wiring.
ビアホール内配線の形成には、従来、蒸着法またはスパ
ッタ法が用いられてきた。しかし、ビアホール径がサブ
ミクロンになると、蒸着法ではアスペクト比の高いビア
ホールを埋めきることができないという問題点が生じる
。このため、気相成長法（Ｃｈｅｍｉｃａｌ Ｖａｐｏ
ｒ Ｄｅｐｏｓｉｔｉｏｎ、以下ＣＶＤと記す）を用い
、ビアホール部分に選択的に金属を堆積させることが試
みられるようになった。金属の選択ＣＶＤの例として、
タングステン（Ｗ）、タングステンシリサイド（ＷＳｉ
ｘ）があげられる。Conventionally, a vapor deposition method or a sputtering method has been used to form wiring inside a via hole. However, when the diameter of the via hole becomes submicron, a problem arises in that the vapor deposition method cannot completely fill the via hole with a high aspect ratio. For this reason, the chemical vapor growth method (Chemical Vapo
Attempts have been made to selectively deposit metal in via hole portions using CVD (hereinafter referred to as CVD). As an example of metal selection CVD,
Tungsten (W), tungsten silicide (WSi)
x) can be given.
Ｗの選択成長については、アルブケルク（＾１ｂｕｑｕ
ｅｒｑｕｅ）、プロシーデイングズ オブ タングステ
ン アンド アザ−リフラクトリ−メタルズ フォー
ブイエルニスアイ アプリケーションズ（Ｐｒｏｃｅｅ
ｄｉｎｇｓ ｏｆ Ｔｕｎｇｓｔｅｎ ａｎｄ ０ｔｈ
ｅｒＲｅｆｒａｃｔｏｒｙ Ｍｅｔａｌｓ ｆｏｒ Ｖ
ＬＳＩ＾ｐｐｌｉｃａｔｉｏｎｓ）、４０７ページ、１
９８５年に、原料ガスとして六フッ化タングステン（Ｗ
Ｆ６）を用い、水素気流中でＳｉ基板上にＷが選択成長
できることが報告されている。この方法では、ある程度
Ｗが成長すると、そこで成長速度が激減してしまうため
、ビアホールを埋め込めないという問題があった。この
理由は次のように考えられている。水素よりもＳｉの方
が還元性が強いので、Ｓｉ上への成長では、水素による
還元反応と同時に、基板からＳｉｗ、子が拡散し胃Ｆ６
＋６／ｘＳｉ−＋Ｗ＋６／ｘＳｉＦｘ（ｘ＝ １
〜４） ・・・（１）
なる反応が生じる。Ｗの膜厚がある程度以上になると、
基板から拡散するＳｉ原子の数が減少する。Regarding the selective growth of W, see Albuquerque (^1buqu
erque), Proceedings of Tungsten and Other Refractory Metals for
Vuelnis Eye Applications (Procee)
dings of Tungsten and 0th
erRefractory Metals for V
LSI^pplications), page 407, 1
In 985, tungsten hexafluoride (W) was used as a raw material gas.
It has been reported that W can be selectively grown on a Si substrate in a hydrogen flow using F6). This method has a problem in that once W grows to a certain extent, the growth rate is drastically reduced, making it impossible to fill the via hole. The reason for this is thought to be as follows. Since Si has a stronger reducing property than hydrogen, when growing on Si, at the same time as the hydrogen-induced reduction reaction, Siw and its molecules diffuse from the substrate and form gastric F6.
+6/xSi-+W+6/xSiFx (x= 1
~4) ...(1) The following reaction occurs. When the film thickness of W exceeds a certain level,
The number of Si atoms diffusing from the substrate is reduced.
このため、（１）式の反応は生じなくなり、代りにＷＦ
６＋３１（２→Ｗ＋６１１Ｆ ・・・（２）な
る還元反応によりＷが成長する。しかし、（２）式によ
るＷの成長速度が非常に低いなめ、成長速度が激減する
。Therefore, the reaction of equation (1) no longer occurs, and instead, WF
6+31 (2→W+611F...(2)) W grows by the reduction reaction. However, the growth rate of W according to equation (2) is extremely low, and the growth rate is drastically reduced.
一方、ＷＳｉｘによるビアホールの埋め込みに関しては
、９１）１６をシラン（ＳｉＨ４）で還元する方法があ
り、これに関しては、ティ・オーバ、ニス・イノウニ、
エム・メダ（Ｔ、０ｈｂａ、Ｓ、Ｉｎｏｕｅ、Ｍ、Ｍｅ
ｄｉ）、プロシーテインダス オブ アイイーイーイー
アイイーデイ−エム テクニカル ダイジェスト（Ｐ
ｒｏｃｅｅｄｉｎＢ ｏｆ ＩＥＥＥ ＩＥＤＭ
Ｔｅｃｈｎｉｃａｌ Ｄｉｇｅｓｔ、）、２１３
ページ、３９８７年に報告されている。この場合、水素
還元で見られたような成長の停止、低成長速度という問
題はない。しかし、胃Ｓｉｘは金属Ｗと比べ抵抗率が１
桁以上高いため、配線材料として不利である。On the other hand, regarding filling via holes with WSix, there is a method of reducing 91)16 with silane (SiH4).
M Meda (T, Ohba, S, Inoue, M, Me
di), Procedures of IEEI IEDM Technical Digest (P
roceedinB of IEEE IEDM
Technical Digest, ), 213
Page, 3987. In this case, there is no problem of halting growth or low growth rate as seen with hydrogen reduction. However, the resistivity of stomach Six is 1 compared to metal W.
It is disadvantageous as a wiring material because it is an order of magnitude more expensive.
また、水素およびシラン還元による選択成長では、成長
界面に１％近い高濃度のフッ素が蓄積することが知られ
ており、このため堆積膜の密着性が低下し、埋め込んだ
Ｗ、ＷＳｉｘが容易に剥離するという欠点があった。Furthermore, in selective growth by hydrogen and silane reduction, it is known that a high concentration of fluorine of nearly 1% accumulates at the growth interface, which reduces the adhesion of the deposited film and makes it easier for buried W and WSix to accumulate. It had the disadvantage of peeling.
本発明の目的は、抵抗が低く、かつ基板との密着性の高
いビアホール内配線とその形成法を提供することにある
。An object of the present invention is to provide a wiring in a via hole that has low resistance and high adhesion to a substrate, and a method for forming the same.
本発明のビアホール内配線は、半導体基板上に絶縁膜を
介して下層導体層と上層導体層とが設けられ、かつ前記
下層導体層と上層導体層とが前記絶縁膜に設けられたビ
アホールに埋込まれた導体で電気的に接続されているビ
アホール内配線において、前記導体が少くともタングス
テンとアルミニウムを含むことを特徴とする。In the via hole wiring of the present invention, a lower conductor layer and an upper conductor layer are provided on a semiconductor substrate via an insulating film, and the lower conductor layer and the upper conductor layer are buried in a via hole provided in the insulating film. In the wiring in the via hole that is electrically connected by a conductor inserted therein, the conductor is characterized in that the conductor contains at least tungsten and aluminum.
本発明のビアホール内配線の形成方法は、半導体基板上
の下層導体層を絶縁、膜で覆い該絶縁膜にビアホールを
形成し、該ビアホールを導体で埋めた後前記絶縁膜上に
上層導体層を形成して前記下層導体層と上層導体層とを
電気的に接続するビアホール内配線の形成方法において
、原料ガスとしてアルミニウム原子を含む有機金属と六
フッ化タングステンとを少くとも用いる気相成長法を用
いて前記ビアホール内に導体を形成することを特徴とす
る。The method for forming interconnects in via holes of the present invention includes covering a lower conductor layer on a semiconductor substrate with an insulating film, forming a via hole in the insulating film, filling the via hole with a conductor, and then forming an upper conductor layer on the insulating film. The method for forming a wiring in a via hole for electrically connecting the lower conductor layer and the upper conductor layer includes a vapor phase growth method using at least an organic metal containing aluminum atoms and tungsten hexafluoride as a raw material gas. A conductor is formed in the via hole by using a conductor.
金属アルミニウムの抵抗率は、約３Ω口とタングステン
の５Ω印の比べ低く、さらにＷＳｉｘの抵抗率の１／１
０以下である。従って、Ｗ−ＡＪ２’の合金をビアホー
ルの埋め込みに用いることで、ＷやＷＳｉｘを用いる場
合に比べ抵抗値が低減される。また、Ａｆｆのみでビア
ホールを埋め込んだ場合、エレクトロマイグレーション
による断線の可能性があるが、Ｗ−へｅ合金ではエレク
トロマイグレーションの影響は大幅に低減される。The resistivity of metal aluminum is lower than the approximately 3Ω mark and the 5Ω mark of tungsten, and it is also 1/1 of the resistivity of WSix.
It is less than or equal to 0. Therefore, by using the W-AJ2' alloy to fill the via hole, the resistance value is reduced compared to the case where W or WSix is used. Furthermore, if a via hole is filled with only Aff, there is a possibility of disconnection due to electromigration, but with the W-to-e alloy, the influence of electromigration is significantly reduced.
ところで、従来の選択ＣＶＤは、アルミニウムを広い成
長条件で選択成長させることが困難であり、本発明のビ
アホール内配線を形成することは困難であった。By the way, in the conventional selective CVD, it is difficult to selectively grow aluminum under a wide range of growth conditions, and it is difficult to form the wiring in the via hole of the present invention.
本発明による形成方法では、アルミニウムを選択的に堆
積させることができるなめ、Ｗと ＡＮからなる電極を
選択的に形成することが可能である。In the formation method according to the present invention, since aluminum can be selectively deposited, it is possible to selectively form electrodes made of W and AN.
有機アルミニウムとしてジエチルアルミニウムクロライ
ド（ＤＥＡｅＣｆｆ）を例にとると、ＤＥＡＩＣ／！は
５ｉ０２、ＳｉＮｘ上の分解温度が金属や半導体表面上
での分解温度より高いなめ、４００℃以下では後者の上
にのみ選択的に堆積する。従って、ｌ１ｆＦ６をＤＥＡ
ｅ（、ｊ？と同時に供給すると、ＷＦ、、＋２ 人！
→Ｗ＋２ 人２Ｆ３なる還元反応により ｌ？が堆積
した部分のみにＷが堆積し、結果としてＷ−ｋｅ金合金
選択的に堆積させることができる。生成されたｌ’Ｆ３
は蒸気圧が高いため、成長表面に滞在することがない。Taking diethylaluminium chloride (DEAeCff) as an example of organic aluminum, DEAIC/! Since the decomposition temperature on 5i02 and SiNx is higher than that on metal and semiconductor surfaces, it is selectively deposited only on the latter at temperatures below 400°C. Therefore, l1fF6 is DEA
If you supply e(,j? at the same time, WF,,+2 people!
→W+2 Due to the reduction reaction 2F3, l? W is deposited only on the portion where W-ke gold alloy is deposited, and as a result, W-ke gold alloy can be selectively deposited. generated l'F3
Because of its high vapor pressure, it does not stay on the growth surface.
よって、ＷＦ６の水素、シラン還元でみちれたような成
長界面へのフッ素の蓄積が起こらず、下地との密着性も
よい。さらに、Ｗと １’の組成比を、ＷＦ６と有機ア
ルミニウムの供給量により調節てきるという特徴をを持
つ。Therefore, the accumulation of fluorine at the growth interface, which is full of hydrogen and silane reduction of WF6, does not occur, and the adhesion to the base is good. Furthermore, it has the characteristic that the composition ratio of W and 1' can be adjusted by the amount of WF6 and organic aluminum supplied.
次に、本発明の一実施例について図面を用いて説明する
。Next, one embodiment of the present invention will be described using the drawings.
第１図は本発明の実施に使用する気相成長装置の系統図
である。FIG. 1 is a system diagram of a vapor phase growth apparatus used in carrying out the present invention.
アルミニウム原子を含む有機金属としてジエチルアルミ
ニウムクロライド（以下ＤＥＡｆＣｅと記す）を用いた
。恒温槽１により６０℃に保たれたＤＥＡｔ？Ｃ４？２
はキャリア窒素３によりバブルされ、反応管４に供給さ
れる。途中配管は、Ｄ ＥＡｅＣｅの析出を防ぐなめ、
ヒーター５によつ８０℃に昇温した。キャリア窒素３の
流量および？／Ｆ、ガス６の流量は流量制御器７により
制御した。基板８はカーボンサセプタ９上に置かれ、高
周波加熱により成長温度まで昇温される０反応管３は圧
力制御器１０およびポンプ１］により１００ Ｔｏｒｒ
に保った。ＤＥＡｆＣｆｆのキャリア窒素は４００３Ｃ
ＣＭとし、ＷＦ６流量は２５．５０．７５．１１００５
ＣＣとした。全窒素量は２ＳＬＭとし、成長温度は３２
℃とした。Diethyl aluminum chloride (hereinafter referred to as DEAfCe) was used as an organic metal containing an aluminum atom. DEAt? maintained at 60°C in thermostatic chamber 1? C4?2
is bubbled by carrier nitrogen 3 and supplied to reaction tube 4. The intermediate piping should be licked to prevent precipitation of D EAeCe.
The temperature was raised to 80°C using heater 5. Flow rate of carrier nitrogen 3 and ? /F, the flow rate of gas 6 was controlled by a flow rate controller 7. The substrate 8 is placed on a carbon susceptor 9, and the reaction tube 3 is heated to the growth temperature by high-frequency heating.The reaction tube 3 is heated to 100 Torr by a pressure controller 10 and a pump 1.
I kept it. The carrier nitrogen of DEAfCff is 4003C
CM, WF6 flow rate is 25.50.75.11005
CC. The total nitrogen amount was 2SLM, and the growth temperature was 32
℃.
第２図は本発明の実施に使用した基板の断面図である。FIG. 2 is a cross-sectional view of a substrate used to implement the present invention.
結晶面（１００）のＳＳ基板２１の上に５ｉ０２膜２２
が２００ｎｍの厚さに、＾ｌ膜２３が５００ｎｍの厚さ
に、さらに５ｉ０２膜２４が１μｍの厚さに順次堆積さ
れており、最上層のＳ１０□膜２４には０．５μｍ径の
ビアホール２５が形成されている。5i02 film 22 on the SS substrate 21 with crystal plane (100)
is sequentially deposited to a thickness of 200 nm, a ^l film 23 to a thickness of 500 nm, and a 5i02 film 24 to a thickness of 1 μm. is formed.
上記成長条件の下で、すべての試料についてビアホール
部分のみに金属のｔ９．Ｍがみられた。堆積した金属の
組成をオージェ電子分光により分析した結果、堆積した
金属はＷと ｌ？からなること、およびＷＦ６流量の増
加と共にＷ含有率が増加することがわかった。また、フ
ッ素は検出されず、体積した膜の密着性も良好であった
。Under the above growth conditions, metal was deposited only in the via hole portion for all samples at t9. M was seen. As a result of analyzing the composition of the deposited metal by Auger electron spectroscopy, the deposited metal was composed of W and l? It was found that the W content increased as the WF6 flow rate increased. Further, no fluorine was detected, and the adhesion of the stacked film was also good.
ＷＦ６流ス５０ＳＣＣＭの条件で、ビアホールを完全に
埋め込み、その後Ａｔ？を蒸着したところ、第１層の＾
ｅＨと電気的に良好なコンタクトがとれていることがわ
かった。また、ビアホール部分の抵抗率はバルクの値と
ほぼ等しかった。Completely fill the via hole under the condition of WF6 flow rate 50SCCM, and then At? When evaporated, the first layer ^
It was found that good electrical contact was made with eH. Furthermore, the resistivity of the via hole portion was almost equal to the bulk value.
次に、比較のため、名訳成長を行ったのと同じ基板上に
Ｗ、ｋｅを蒸着法でそれぞれ１μｍ Ｄｉ Ｎしたもの
を作製した。この場合、段切れにより第１層とのコンタ
クトがとれないものが全体の約４０％あった。また、段
切れしていないものについても、ビアホール全体が埋め
込まれていないなめ、ビアホール部分の抵抗率が高かっ
た。これにより、本発明により高アスペクト比のビアホ
ールに対しても、良好なコンタクトをとることができる
ことがわかった。Next, for comparison, 1 μm of W and ke were deposited on the same substrate on which the epitaxial growth was performed, respectively, by vapor deposition. In this case, about 40% of the cases were unable to make contact with the first layer due to step breaks. In addition, even in the case where the steps were not cut, the resistivity of the via hole portion was high because the entire via hole was not filled. This revealed that the present invention allows good contact to be made even to via holes with high aspect ratios.
本実施例では、へｌ原子を含む有機金属とじてジエチル
アルミニウムクロライドを用いたが、本発明はこれに限
定されず、トリエチルアルミニウム、トリイソブチルア
ルミニウムを用いた場合も同様の効果が得られる。In this example, diethylaluminum chloride was used as the organic metal containing a hel atom, but the present invention is not limited thereto, and similar effects can be obtained when triethylaluminum or triisobutylaluminum is used.
本実施例では、減圧下の成長を示したが、本発明におけ
る選択性は、基板表面の触媒作用により有機アルミニウ
ムの分解が低温で起こることを利用したものなので、常
圧下の成長でも同様の効果が得られる。また同じ理由か
ら、高周波加熱炉のかわりにホットウォール炉を用いる
こともできる。Although this example shows growth under reduced pressure, the selectivity in the present invention takes advantage of the fact that the decomposition of organoaluminum occurs at low temperatures due to the catalytic action of the substrate surface, so the same effect can be obtained even under normal pressure. is obtained. Also, for the same reason, a hot wall furnace can be used instead of the high frequency heating furnace.
本発明によれば、ＷＳｉｘを用いる場合に比べてコンタ
クト抵抗が低く、かつ基板との密着性の高いビアホール
内配線を形成することができる。さらに、本発明による
ビアホール内配線は、八ｅで問題となるエレクトロマイ
グレーションの影響もない
第１図は本発明の実施に使用する気相成長装置の系統図
、第２図は本発明の実施に使用した基板の断面図である
。According to the present invention, it is possible to form wiring within a via hole that has lower contact resistance and has higher adhesion to the substrate than when using WSix. Furthermore, the wiring within the via hole according to the present invention is free from the effects of electromigration, which is a problem in 8e. Figure 1 is a system diagram of a vapor phase growth apparatus used for implementing the present invention, and Figure 2 is a system diagram for implementing the present invention. FIG. 3 is a cross-sectional view of the substrate used.
１・・・恒温槽、２・・・ＤＥＡＩ；ＩＣＩ！、３・・
・キャリア窒素、４・・・反応管、５・・・ヒーター
６・・・ＷＦ６ガス、７・・・流量制御器、８・・・基
板、９・・・カーボンサセプタ、１０・・・圧力制御器
、１１・・・ポンプ、１２・・・Ｓｉ基板、２２・・・
５ｉ０２膜、２３・・・Ａ！膜、２４・・・５ｉ０２膜
、２５・・・ビアホール。1... Constant temperature bath, 2... DEAI; ICI! , 3...
・Carrier nitrogen, 4... Reaction tube, 5... Heater
6... WF6 gas, 7... Flow rate controller, 8... Substrate, 9... Carbon susceptor, 10... Pressure controller, 11... Pump, 12... Si substrate, 22 ...
5i02 membrane, 23...A! Membrane, 24...5i02 membrane, 25... Via hole.
代理人 弁理士 内 原 晋Agent Patent Attorney Susumu Uchihara
酷Ｚ区 Cruel Z-ku
Claims (2)
導体層とが設けられ、かつ前記下層導体層と上層導体層
とが前記絶縁膜に設けられたビアホールに埋込まれた導
体で電気的に接続されているビアホール内配線において
、前記導体が少くともタングステンとアルミニウムを含
むことを特徴とするビアホール内配線。(1) A lower conductor layer and an upper conductor layer are provided on a semiconductor substrate with an insulating film interposed therebetween, and the lower conductor layer and the upper conductor layer are conductors embedded in via holes provided in the insulating film. A wiring in a via hole that is electrically connected, wherein the conductor contains at least tungsten and aluminum.
膜にビアホールを形成し、該ビアホールを導体で埋めた
後前記絶縁膜上に上層導体層を形成して前記下層導体層
と上層導体層とを電気的に接続するビアホール内配線の
形成方法において、原料ガスとしてアルミニウム原子を
含む有機金属と六フッ化タングステンとを少くとも用い
る気相成長法を用いて前記ビアホール内に導体を形成す
ることを特徴とするビアホール内配線の形成方法。(2) Covering the lower conductor layer on the semiconductor substrate with an insulating film and forming a via hole in the insulating film, filling the via hole with a conductor, and then forming an upper conductor layer on the insulating film to connect the lower conductor layer and the upper conductor layer. In a method for forming a wiring in a via hole that electrically connects a conductor layer, a conductor is formed in the via hole using a vapor phase growth method using at least an organic metal containing aluminum atoms and tungsten hexafluoride as a raw material gas. A method for forming wiring in a via hole, the method comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1088619A JP2841449B2 (en) | 1989-04-07 | 1989-04-07 | Via-hole wiring and method of forming the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1088619A JP2841449B2 (en) | 1989-04-07 | 1989-04-07 | Via-hole wiring and method of forming the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02267933A true JPH02267933A (en) | 1990-11-01 |
| JP2841449B2 JP2841449B2 (en) | 1998-12-24 |
Family
ID=13947821
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1088619A Expired - Fee Related JP2841449B2 (en) | 1989-04-07 | 1989-04-07 | Via-hole wiring and method of forming the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2841449B2 (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6240743A (en) * | 1985-08-16 | 1987-02-21 | Toshiba Corp | Manufacture of semiconductor device |
| JPS62186548A (en) * | 1986-02-12 | 1987-08-14 | Fujitsu Ltd | Forming method for wiring layer using vapor growth |
| JPS6465852A (en) * | 1987-09-07 | 1989-03-13 | Hitachi Ltd | Method of filling fine hole with metal |
-
1989
- 1989-04-07 JP JP1088619A patent/JP2841449B2/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6240743A (en) * | 1985-08-16 | 1987-02-21 | Toshiba Corp | Manufacture of semiconductor device |
| JPS62186548A (en) * | 1986-02-12 | 1987-08-14 | Fujitsu Ltd | Forming method for wiring layer using vapor growth |
| JPS6465852A (en) * | 1987-09-07 | 1989-03-13 | Hitachi Ltd | Method of filling fine hole with metal |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2841449B2 (en) | 1998-12-24 |
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