JPH02245761A - Photosensitive body using superlattice avalanche photodiode and electrostatic charge image recording method - Google Patents
Photosensitive body using superlattice avalanche photodiode and electrostatic charge image recording methodInfo
- Publication number
- JPH02245761A JPH02245761A JP1067246A JP6724689A JPH02245761A JP H02245761 A JPH02245761 A JP H02245761A JP 1067246 A JP1067246 A JP 1067246A JP 6724689 A JP6724689 A JP 6724689A JP H02245761 A JPH02245761 A JP H02245761A
- Authority
- JP
- Japan
- Prior art keywords
- charge
- layer
- electrode
- photoreceptor
- superlattice
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 37
- 108091008695 photoreceptors Proteins 0.000 claims description 50
- 230000014759 maintenance of location Effects 0.000 claims description 41
- 238000010030 laminating Methods 0.000 abstract description 8
- 239000010410 layer Substances 0.000 description 100
- 238000000098 azimuthal photoelectron diffraction Methods 0.000 description 30
- 239000000463 material Substances 0.000 description 23
- 239000010408 film Substances 0.000 description 16
- 238000000576 coating method Methods 0.000 description 12
- 238000003860 storage Methods 0.000 description 12
- 229920005989 resin Polymers 0.000 description 10
- 239000011347 resin Substances 0.000 description 10
- 238000001514 detection method Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 230000003287 optical effect Effects 0.000 description 8
- 238000007740 vapor deposition Methods 0.000 description 8
- -1 silver halide Chemical class 0.000 description 7
- 239000002904 solvent Substances 0.000 description 7
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 239000011230 binding agent Substances 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- HEDRZPFGACZZDS-UHFFFAOYSA-N Chloroform Chemical compound ClC(Cl)Cl HEDRZPFGACZZDS-UHFFFAOYSA-N 0.000 description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000002985 plastic film Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 230000005525 hole transport Effects 0.000 description 3
- 239000000123 paper Substances 0.000 description 3
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 3
- 239000004926 polymethyl methacrylate Substances 0.000 description 3
- 235000011649 selenium Nutrition 0.000 description 3
- 229920002050 silicone resin Polymers 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- GGCZERPQGJTIQP-UHFFFAOYSA-N sodium;9,10-dioxoanthracene-2-sulfonic acid Chemical compound [Na+].C1=CC=C2C(=O)C3=CC(S(=O)(=O)O)=CC=C3C(=O)C2=C1 GGCZERPQGJTIQP-UHFFFAOYSA-N 0.000 description 3
- 238000005728 strengthening Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- WYURNTSHIVDZCO-UHFFFAOYSA-N tetrahydrofuran Substances C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 3
- SCYULBFZEHDVBN-UHFFFAOYSA-N 1,1-Dichloroethane Chemical compound CC(Cl)Cl SCYULBFZEHDVBN-UHFFFAOYSA-N 0.000 description 2
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 2
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 2
- UJOBWOGCFQCDNV-UHFFFAOYSA-N 9H-carbazole Chemical compound C1=CC=C2C3=CC=CC=C3NC2=C1 UJOBWOGCFQCDNV-UHFFFAOYSA-N 0.000 description 2
- 229920000178 Acrylic resin Polymers 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229920000877 Melamine resin Polymers 0.000 description 2
- 239000004640 Melamine resin Substances 0.000 description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 2
- 239000011354 acetal resin Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000000284 extract Substances 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000005011 phenolic resin Substances 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 229920005668 polycarbonate resin Polymers 0.000 description 2
- 239000004431 polycarbonate resin Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000009719 polyimide resin Substances 0.000 description 2
- 239000002861 polymer material Substances 0.000 description 2
- 229920006324 polyoxymethylene Polymers 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 239000011669 selenium Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 229920003048 styrene butadiene rubber Polymers 0.000 description 2
- 229920005992 thermoplastic resin Polymers 0.000 description 2
- 229920006337 unsaturated polyester resin Polymers 0.000 description 2
- 229920002554 vinyl polymer Polymers 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- QGKMIGUHVLGJBR-UHFFFAOYSA-M (4z)-1-(3-methylbutyl)-4-[[1-(3-methylbutyl)quinolin-1-ium-4-yl]methylidene]quinoline;iodide Chemical compound [I-].C12=CC=CC=C2N(CCC(C)C)C=CC1=CC1=CC=[N+](CCC(C)C)C2=CC=CC=C12 QGKMIGUHVLGJBR-UHFFFAOYSA-M 0.000 description 1
- DHKHKXVYLBGOIT-UHFFFAOYSA-N 1,1-Diethoxyethane Chemical compound CCOC(C)OCC DHKHKXVYLBGOIT-UHFFFAOYSA-N 0.000 description 1
- YJTKZCDBKVTVBY-UHFFFAOYSA-N 1,3-Diphenylbenzene Chemical group C1=CC=CC=C1C1=CC=CC(C=2C=CC=CC=2)=C1 YJTKZCDBKVTVBY-UHFFFAOYSA-N 0.000 description 1
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- 229920002799 BoPET Polymers 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- ZCQWOFVYLHDMMC-UHFFFAOYSA-N Oxazole Chemical compound C1=COC=N1 ZCQWOFVYLHDMMC-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004696 Poly ether ether ketone Substances 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 239000005083 Zinc sulfide Substances 0.000 description 1
- QLNFINLXAKOTJB-UHFFFAOYSA-N [As].[Se] Chemical compound [As].[Se] QLNFINLXAKOTJB-UHFFFAOYSA-N 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 150000004982 aromatic amines Chemical class 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 125000000664 diazo group Chemical group [N-]=[N+]=[*] 0.000 description 1
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 description 1
- AXAZMDOAUQTMOW-UHFFFAOYSA-N dimethylzinc Chemical compound C[Zn]C AXAZMDOAUQTMOW-UHFFFAOYSA-N 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 229920006351 engineering plastic Polymers 0.000 description 1
- HQQADJVZYDDRJT-UHFFFAOYSA-N ethene;prop-1-ene Chemical group C=C.CC=C HQQADJVZYDDRJT-UHFFFAOYSA-N 0.000 description 1
- 210000004709 eyebrow Anatomy 0.000 description 1
- 229920002457 flexible plastic Polymers 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- CPBQJMYROZQQJC-UHFFFAOYSA-N helium neon Chemical compound [He].[Ne] CPBQJMYROZQQJC-UHFFFAOYSA-N 0.000 description 1
- 150000007857 hydrazones Chemical class 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 229910052809 inorganic oxide Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 125000001434 methanylylidene group Chemical group [H]C#[*] 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 1
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 1
- 229920001568 phenolic resin Polymers 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920001197 polyacetylene Polymers 0.000 description 1
- 229920002530 polyetherether ketone Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- DNXIASIHZYFFRO-UHFFFAOYSA-N pyrazoline Chemical compound C1CN=NC1 DNXIASIHZYFFRO-UHFFFAOYSA-N 0.000 description 1
- WVIICGIFSIBFOG-UHFFFAOYSA-N pyrylium Chemical compound C1=CC=[O+]C=C1 WVIICGIFSIBFOG-UHFFFAOYSA-N 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000007665 sagging Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229940065287 selenium compound Drugs 0.000 description 1
- 125000003748 selenium group Chemical group *[Se]* 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 125000005504 styryl group Chemical group 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- PCCVSPMFGIFTHU-UHFFFAOYSA-N tetracyanoquinodimethane Chemical compound N#CC(C#N)=C1C=CC(=C(C#N)C#N)C=C1 PCCVSPMFGIFTHU-UHFFFAOYSA-N 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 150000003852 triazoles Chemical class 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000012800 visualization Methods 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Photoreceptors In Electrophotography (AREA)
- Combination Of More Than One Step In Electrophotography (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は露光部での像電荷の生成効率がよく、また電圧
印加時露光に使用され、電荷保持媒体に露光部と未露光
のコントラスト比の優れた像電荷を蓄積することができ
る感光体及び静電画像記録方法に関する。Detailed Description of the Invention [Industrial Application Field] The present invention has high image charge generation efficiency in the exposed area, and is used for exposure when a voltage is applied, and the contrast ratio between the exposed area and the unexposed area is The present invention relates to a photoreceptor capable of accumulating an excellent image charge and an electrostatic image recording method.
従来、高感度橋形技術として銀塩写真法が知られている
。この写真法においては、措影像は現像工程を経てフィ
ルム等に記録され、画像を再現する場合には銀塩乳剤（
印画紙等）を用いるか、または現像フィルムを光学走査
して陰極線管（以下ＣＲＴ）に再現させる等により行わ
れている。Conventionally, silver halide photography has been known as a highly sensitive cross-sectional technique. In this photography method, the photographic image is recorded on a film, etc. through a developing process, and when reproducing the image, a silver salt emulsion (
This is done by using a photographic paper (such as photographic paper) or by optically scanning a developed film and reproducing it on a cathode ray tube (hereinafter referred to as CRT).
また、光導電層に電極を蒸着し、暗所で光導電層上にコ
ロナ帯電により全面帯電させ、次いで強い光で露光して
光の当たった部位の光導電層を導電性にし、その部位の
電荷をリークさせて除去することにより静電荷潜像を光
導電層の面上に光学的に形成させ、その残留静電荷と逆
極性の電荷（または同種性の電荷）を有するトナーを付
着させて現像する電子写真技術があるが、これは主とし
て複写用に用いられており、一般に低感度のため撮影用
としては使用できず、静電荷の保持時間が短いために静
電潜像形成後、直ちにトナー現像するのが普通である。In addition, electrodes are deposited on the photoconductive layer, the entire surface of the photoconductive layer is charged by corona charging in a dark place, and then exposed to strong light to make the photoconductive layer conductive in the areas exposed to the light. By leaking and removing the charge, an electrostatic latent image is optically formed on the surface of the photoconductive layer, and a toner having a charge of the opposite polarity (or a charge of the same type) as the residual electrostatic charge is deposited. There is an electrophotographic technology that involves developing, but this is mainly used for copying and cannot be used for photography due to its low sensitivity.The retention time of electrostatic charge is short, so it is not possible to use it immediately after forming an electrostatic latent image. It is common to use toner for development.
また、ＴＶＶ影技術は邊像管で撮影し、光半導体を利用
して得た画像情報を電気信号として取り出し、そのまま
ＣＲＴに出力させるか、磁気記録等を用いてビデオ記録
し、任意の時にＣＲＴ上に像出力させる等の方法がある
。In addition, TVV shadow technology takes pictures with a picture tube, extracts the image information obtained using an optical semiconductor as an electrical signal, outputs it as is to a CRT, or records it as a video using magnetic recording, etc. There are methods such as outputting an image on top.
銀塩写真法は被写体像を保存する手段として優れている
が、銀塩像を形成させるために現像工程を必要とし、像
再現においてはハードコピー、ソフトコピー（ＣＲＴ出
力）等に至る複雑な光学的、電気的、または化学的処理
が必要である。Silver halide photography is an excellent means of preserving images of subjects, but it requires a developing process to form silver halide images, and image reproduction involves complex optical processes such as hard copy and soft copy (CRT output). physical, electrical, or chemical treatment is required.
電子写真技術は、得られた静電潜像の顕像化は銀塩写真
法よりも簡単、迅速であるが潜像保存は極めて短く、現
像剤の解離性、画質等は銀塩に劣る。In electrophotographic technology, the visualization of the obtained electrostatic latent image is easier and faster than in silver salt photography, but the storage time of the latent image is extremely short, and the developer dissociation properties, image quality, etc. are inferior to silver salt.
ＴＶ盪形影技術盪像管で得られた電気的像信号を取り出
し、また記録するためには線順次走査が必要となる。線
順次走査は撮像管内では電子ビームで、ビデオ記録では
磁気ヘッドで行うが、解像性は走査線数に依存するため
、銀塩写真のような面状アナログ記録に比して著しく劣
化する。Line-sequential scanning is required to extract and record the electrical image signals obtained with the TV image tube. Line-sequential scanning is performed using an electron beam in the image pickup tube and a magnetic head for video recording, but since resolution depends on the number of scanning lines, it is significantly degraded compared to planar analog recording such as silver halide photography.
また、近年発達しつつある固体撮像素子（ＣＯＤ等）を
利用したＴＶ撮像系も解像性に関しては本質的に同様で
ある。Furthermore, TV imaging systems using solid-state imaging devices (COD, etc.), which have been developing in recent years, are essentially the same in terms of resolution.
これらの技術の内蔵する問題点は画像記録が高品質、高
解像であれば処理工程が複雑であり、工程が簡便であれ
ば記憶機能の欠如、あるいは画質の基本的劣化等があっ
た。Problems inherent in these technologies include a complicated processing process if the image recording is of high quality and high resolution, and a lack of storage function or basic deterioration of image quality if the process is simple.
本発明者は、先に前面に電極が設けられた光導電層から
なる感光体と、該感光体に対向し、後面に電極が設けら
れた電荷保持層からなる電荷保持媒体とを光軸上に配置
し、両電極間に電圧を印加しつつ露光することにより入
射光学像に応じた静電潜像を電荷保持媒体上に形成する
静電画像記録方法を出願（特願昭６３−１２１５９２号
）したが、この感光体は露光量に応じた光キャリアーし
か発生せず、その感度に一定の課題を有している。The present inventor first proposed a photoreceptor consisting of a photoconductive layer provided with an electrode on the front surface, and a charge retention medium consisting of a charge retention layer facing the photoreceptor and provided with an electrode on the rear surface on the optical axis. An application was filed for an electrostatic image recording method in which an electrostatic latent image corresponding to an incident optical image is formed on a charge-retaining medium by exposure while applying a voltage between both electrodes (Japanese Patent Application No. 63-121592). ) However, this photoreceptor only generates photocarriers depending on the amount of exposure, and has a certain problem with its sensitivity.
本発明は上記課題を解決するもので、露光量に応じて露
光部での像電荷を増幅しうる感光体及び静電画像記録方
法の提供を課題とする。The present invention is intended to solve the above-mentioned problems, and an object of the present invention is to provide a photoreceptor and an electrostatic image recording method that can amplify the image charge in the exposed area according to the amount of exposure.
本発明の超格子アバランシェホトダイオード（以下、超
格子ＡＰＤという）を使用した感光体は、電極上に光導
電層として電荷発生層、超格子ＡＰＤ層、電荷輸送層を
順次積層したことを特徴とする。A photoreceptor using a superlattice avalanche photodiode (hereinafter referred to as superlattice APD) of the present invention is characterized in that a charge generation layer, a superlattice APD layer, and a charge transport layer are sequentially laminated as a photoconductive layer on an electrode. .
また本発明の静電画像記録方法は、前面に電極が設けら
れ、該電極上に光導電層として電荷発生層、超格子ＡＰ
Ｄ層、電荷輸送層を順次積層した感光体と、後面に電極
が設けられた電荷保持層からなる電荷保持媒体とを対向
させ、接触又は非接触で配置し、両電極間に電圧印加時
露光し、電荷保持媒体に露光パターンに対応する静電荷
パターンを形成することを特徴とする。Further, in the electrostatic image recording method of the present invention, an electrode is provided on the front surface, and a charge generation layer and a superlattice AP are provided as a photoconductive layer on the electrode.
A photoreceptor in which a D layer and a charge transport layer are sequentially laminated, and a charge retention medium consisting of a charge retention layer with an electrode provided on the rear surface are placed facing each other in contact or non-contact, and exposed when a voltage is applied between both electrodes. The method is characterized in that an electrostatic charge pattern corresponding to the exposure pattern is formed on the charge retention medium.
まず、本発明の超格子ＡＰＤを使用した感光体について
説明する。First, a photoreceptor using the superlattice APD of the present invention will be explained.
第１図は本発明の感光体の概略を示す断面図で、図中１
は感光体、５は感光体支持体、７は感光体電極、９は光
導電層で、９ａは１荷発生層、９ｂは超格子ＡＰＤｊｉ
！ｌ、９ｃは電荷輸送層である。FIG. 1 is a cross-sectional view schematically showing the photoreceptor of the present invention.
is a photoreceptor, 5 is a photoreceptor support, 7 is a photoreceptor electrode, 9 is a photoconductive layer, 9a is a charge generation layer, 9b is a superlattice APDji
! 1 and 9c are charge transport layers.
本発明の感光体は、まず支持体上５に積層された電極層
７上に、光導電材料である電荷発生Ｎ９ａを積層し、次
いで電子ナダレ特性を有する超格子ＡＰＤＪ！１９ｂ、
更にその超格子ＡＰＤ層上に電で輸送特性を有する電荷
輸送層９ｃを積層することにより形成される。In the photoreceptor of the present invention, a charge generating N9a which is a photoconductive material is first laminated on an electrode layer 7 laminated on a support 5, and then a superlattice APDJ! having an electron sag characteristic is laminated. 19b,
Furthermore, it is formed by laminating a charge transport layer 9c having electric transport properties on the superlattice APD layer.
電荷発生層１よ電荷発生機能に優れた光導電性材料から
なる層であり、例えばアモルファスシリコン、アモルフ
ァスセレン、有機感光材料としては顔料としてアゾ系、
ジスアゾ系、トリスアゾ系、アズレニウム塩系、フタロ
シアニン系、染料系としてシアニン系、スチリル色素系
、ピリリウム色素系、ペリレン系、メチン系、スクアリ
ウム塩基等を使用するとよい。The charge generation layer 1 is a layer made of a photoconductive material with excellent charge generation function, such as amorphous silicon, amorphous selenium, organic photosensitive materials such as azo pigments,
It is preferable to use a disazo type, a trisazo type, an azulenium salt type, a phthalocyanine type, and as a dye type, a cyanine type, a styryl dye type, a pyrylium dye type, a perylene type, a methine type, a squalium base, etc.
アモルファスシリコンを積層するには、シランガス、ま
た必要に応じて後述する不純物等を共に低真空中（１０
−”〜Ｉ Ｔｏｒｒ）に導入し、グロー放電により加熱
、或いは加熱しないで、電極上に堆積して成膜するか、
加熱した電極上に熱化学的に反応形成するか、或いは固
体原料を蒸着、或いはスパッタ法により成膜し、単層、
或いは積層するとよい。To stack amorphous silicon, silane gas and, if necessary, impurities described later are mixed in a low vacuum (10
-” to I Torr) and heated by glow discharge, or deposited on the electrode without heating, or
A single layer is formed by thermochemical reaction on a heated electrode, or by vapor deposition or sputtering of a solid raw material.
Alternatively, they may be laminated.
感光体電極の極性がプラスの場合にはＰ型としホール輸
送型とするとよく、上記不純物として硼素、ＡＪ、Ｇａ
、Ｉｎ、ＴＩ等をドーピングする。When the polarity of the photoreceptor electrode is positive, it is preferable to use a P type and a hole transport type, and the above impurities include boron, AJ, Ga.
, In, TI, etc. are doped.
また、マイナスの場合にはＮ型とし、電子輸送型とする
とよ＜、燐、銀、アンチモン、ビスマス等をドーピング
するか或いはドーピングなしで用いてもよい。In addition, in the case of a negative value, the material is N type, and may be an electron transport type. It may be doped with phosphorus, silver, antimony, bismuth, etc., or may be used without doping.
有機感光材料をバインダーと共に溶剤に溶解し、電極上
にスピンナーコーティング法、ブレードコーティング法
等により塗布することにより形成される。It is formed by dissolving an organic photosensitive material together with a binder in a solvent and applying it onto the electrode by a spinner coating method, a blade coating method, or the like.
バインダーとしてシリコーン樹脂、スチレン−ブタジェ
ン共重合体樹脂、エポキシ樹脂、アクリル樹脂、飽和又
は不飽和ポリエステル樹脂、ポリカーボネート樹脂、ポ
リビニルアセタール樹脂、フェノール樹脂、ポリメチル
メタアクリレート（ＰＭＭＡ）樹脂、メラミン樹脂、ポ
リイミド樹脂等を電荷発生材料１部に対し、０．１−１
０部添加して付着し易いようにする。As a binder, silicone resin, styrene-butadiene copolymer resin, epoxy resin, acrylic resin, saturated or unsaturated polyester resin, polycarbonate resin, polyvinyl acetal resin, phenol resin, polymethyl methacrylate (PMMA) resin, melamine resin, polyimide resin etc. to 1 part of charge generating material, 0.1-1
Add 0 parts to make it easier to adhere.
溶剤としてはバインダーの種類、電荷発生材料の種類に
依存するが、塩素系溶剤（クロロホルム、ジクロルエタ
ン、ジクロロメタン等）、ＴＨＦ。Examples of the solvent include chlorine-based solvents (chloroform, dichloroethane, dichloromethane, etc.) and THF, although it depends on the type of binder and charge-generating material.
ジオキサン、トルエン、ＭＥＫ、アルコール類を単独、
又は混合で使用するとよい。Dioxane, toluene, MEK, alcohol alone,
Or it may be used in combination.
この電荷発生層上に積層される超格子ＡＰＤ層について
説明する。The superlattice APD layer laminated on this charge generation layer will be explained.
超格子ＡＰＤとしては、第２図に示すようにそのエネル
ギーバンド図が矩形状ポテンシャル又は鋸歯状ポテンシ
ャルを有する縦型超格子ＡＰＤ、また横型超格子ＡＰＤ
を使用するものである。Superlattice APDs include vertical superlattice APDs whose energy band diagram has a rectangular potential or sawtooth potential as shown in Figure 2, and horizontal superlattice APDs.
is used.
まず縦型超格子ＡＰＤは、例えばＧａ−Ａｓ（Ａｓ比率
５０％）からなる二成分系組成物を膜厚４５０人に積層
し、そのＧａ−Ａｓ層上にＧａ −ＡｓのＧａ成分の４
５％がＡＩにより置換された三成分系組成物を膜厚を５
５０人に積層することにより得られる積層体単位を５０
周期反復して形成し、Ｇａ−Ａｓ層側を正極とし、Ａｊ
−Ｇａ−Ａｓ層側を負極として電圧印加すると、Ｇａ−
Ａｓ層をｎ゛層、Ｇａ−Ａｌ−Ａｓを９０層とするｐｎ
接合が形成されるものである。このＡＰＤの９０層から
電荷発生層側に積層することにより、本発明の縦型ＡＰ
Ｄ層を形成することができる。First, a vertical superlattice APD is produced by laminating a two-component composition consisting of, for example, Ga-As (As ratio 50%) to a thickness of 450 mm, and then depositing the Ga component of Ga-As on the Ga-As layer.
A ternary composition in which 5% was replaced by AI was applied to a film thickness of 5%.
50 laminate units obtained by stacking 50 people
The Ga-As layer side is formed as a positive electrode, and the Aj
- When voltage is applied with the Ga-As layer side as the negative electrode, the Ga-
pn with n layers of As layer and 90 layers of Ga-Al-As
A bond is formed. By stacking the 90 layers of this APD on the charge generation layer side, the vertical AP of the present invention
A D layer can be formed.
第２図（イ）にこの縦型超格子ＡＰＤのエネルギーバン
ド図を示す、縦型超格子ＡＰＤの特性は、感光体電極を
負極とし、対向した電荷保持媒体電極側を正極として電
圧印加時露光することにより、Ｍ厚方向に形成されるコ
ンダクションバンドにおけるｐｎｐ接合のエネルギー勾
配を、バレンスパントでのエネルギー勾配より高くする
ことができるもので、電荷保持媒体側からの正孔は加速
されないが、光照射により電荷発生層で発生した光電子
は電界によって膜厚方向でその勾配により加速されて電
子ナダレ現象を生じ、光キャリアーはＡＰＤ層の眉間を
移動するにつれ２０倍以上に増幅されるものである。Figure 2 (A) shows the energy band diagram of this vertical superlattice APD.The characteristics of the vertical superlattice APD are as follows: The photoreceptor electrode is the negative electrode, and the opposing charge holding medium electrode is the positive electrode. By doing this, the energy gradient of the pnp junction in the conduction band formed in the M thickness direction can be made higher than the energy gradient in the valence spunt, and holes from the charge retention medium side are not accelerated, Photoelectrons generated in the charge generation layer by light irradiation are accelerated by the gradient of the electric field in the film thickness direction, causing an electron sag phenomenon, and as the photocarriers move between the eyebrows of the APD layer, they are amplified more than 20 times. .
またこの縦型超格子ＡＰＤにおいて、その９０層でのＡ
ｌの濃度勾配を膜厚方向に電荷発生層側から連続的にＯ
→４５％となるように高めて形成することにより、第２
図（ロ）に示すようにコンダクションバンドでのエネル
ギー障壁を鋸歯状とすることができる。この場合、電圧
印加時では同図（ハ）に示すようにエネルギー障壁をな
くすことができ、電子ナダレ現象を一層生じやすくする
ことができるものである。In addition, in this vertical superlattice APD, the A
The concentration gradient of O is continuously applied in the film thickness direction from the charge generation layer side.
→ By increasing the formation to 45%, the second
As shown in figure (b), the energy barrier in the conduction band can be made into a sawtooth shape. In this case, when a voltage is applied, the energy barrier can be eliminated as shown in FIG.
更に上記縦型超格子ＡＰＤは、その膜厚方向で光電子が
移動するものであるが、ＡＰＤの積層体を層方向に直角
な方向で切断した形状として、その切断面から電荷発生
層上に積層することにより、横型超格子ＡＰＤを積層す
ることができる。Furthermore, in the above-mentioned vertical superlattice APD, photoelectrons move in the film thickness direction, and the APD stack is cut in a direction perpendicular to the layer direction, and the stack is stacked on the charge generation layer from the cut surface. By doing so, horizontal superlattice APDs can be stacked.
このＡＰＤにおけるエネルギーバンド構造を第２図（ニ
）に示す、この図から分かるように、コンダクションバ
ンドでの９６層とｎ゛層とのエネルギー準位差がバレン
スパントのそれより大きくすることができるので、２０
層からｎ°層への光電子つ移動の際に電子ナダレ現象を
生じさせることができるものである。The energy band structure in this APD is shown in Figure 2 (d). As can be seen from this figure, the energy level difference between the 96th layer and the n' layer in the conduction band can be made larger than that in the valence span. I can do it, so 20
This is capable of causing an electron sag phenomenon when photoelectrons are transferred from the layer to the n° layer.
これらのＡＰＤ層は感光体電極を負極性とする場合に有
効であるが、正孔のナダレ効果を奏するＡＰＤを使用し
てもよく、その場合には感光体電極の極性は正極性とす
るとよい。These APD layers are effective when the photoreceptor electrode has a negative polarity, but an APD that exhibits a hole sagging effect may also be used, and in that case, it is preferable that the photoreceptor electrode has a positive polarity. .
このようにして形成したＡＰＤ層上に更に電荷輸送層を
積層する。A charge transport layer is further laminated on the APD layer thus formed.
電荷輸送層は光が照射されると光キャリアー輸送特性を
有するもので、感光体電極の極性に応じて正孔輸送性、
又は電子輸送性を有する電荷輸送層とする必要がある。The charge transport layer has photocarrier transport properties when irradiated with light, and depending on the polarity of the photoreceptor electrode, it has hole transport properties,
Alternatively, the charge transport layer needs to have electron transport properties.
感光体電極が正の時には、正孔輸送性のよいアモルファ
スセレン、更に有機感光材料例えばヒドラゾン系、ピラ
ゾリン系、ＰＶＫ系、カルバゾール系、オキサゾール系
、トリアゾール系、芳香族アミン系、アミン系、トリフ
ェニルメタン系、多環芳香族化合物系等を使用するとよ
い。When the photoreceptor electrode is positive, amorphous selenium with good hole transport properties and organic photosensitive materials such as hydrazone type, pyrazoline type, PVK type, carbazole type, oxazole type, triazole type, aromatic amine type, amine type, and triphenyl are used. It is preferable to use methane type, polycyclic aromatic compound type, etc.
形成方法としては、ａ−３ｓの場合には、電荷発生層上
に、蒸着、スパック法等により形成することができ、ア
モルファスセレン、アモルファスセレンテルル、アモル
ファス砒素セレン化合物（ａ−八５ｔｓｅｓ） 、アモ
ルファス砒素セレン化合物（ａ−Ａむ５ｅｓ） ＋テル
ル等を、単層、または複層、または各種アモルファスセ
レンを組み合わせ積層するとよい、また有機感光材料の
場合には溶剤に溶かし電荷発生層上にスピンナーコーテ
ィング法等により塗布するとよい。As for the formation method, in the case of a-3s, it can be formed on the charge generation layer by vapor deposition, spuck method, etc. Arsenic selenium compound (a-Amu5es) + tellurium, etc. may be laminated in a single layer, multiple layers, or in combination with various amorphous seleniums.In the case of organic photosensitive materials, it is dissolved in a solvent and coated with a spinner on the charge generation layer. It is best to apply it according to the method.
感光体電極がマイナスの場合には、電子輸送性のよい酸
化亜鉛等を使用するとよく、その形成方法としてはコー
ティング法、或いはＣＶＤ法で作製される。コーティン
グ法としては、硫化亜鉛粒子（粒径１〜１００μｍ）を
バインダー中に分散させ、溶媒を添加して電荷発生層上
にコーティングするか、またはジエチル亜鉛、ジメチル
亜鉛等の有機金属を酸素ガスと共に低真空中（１０−”
〜Ｉ Ｔｏｒｒ）で混合し、加熱（１５０℃〜４００℃
）した電荷発生層上で化学反応させ、酸化亜鉛膜として
堆積させるとよい。When the photoreceptor electrode is negative, zinc oxide or the like with good electron transport properties may be used, and the electrode may be formed by a coating method or a CVD method. As a coating method, zinc sulfide particles (particle size 1 to 100 μm) are dispersed in a binder and a solvent is added to coat the charge generation layer, or an organic metal such as diethylzinc or dimethylzinc is coated with oxygen gas. In low vacuum (10-”
Mix at ~I Torr) and heat (150°C to 400°C
) is preferably deposited as a zinc oxide film through a chemical reaction on the charge generation layer.
なお塗布法を使用する場合にはバインダーとしてシリコ
ーン樹脂、スチレン−ブタジェン共重合体樹脂、エポキ
シ樹脂、アクリル樹脂、飽和又は不飽和ポリエステル樹
脂、ポリカーボネート樹脂、ポリビニルアセタール樹脂
、フェノール樹脂、ポリメチルメタアクリレート（ＰＭ
ＭＡ）樹脂、メラミン樹脂、ポリイミド樹脂等を電荷発
生材料と電荷発生材料各１部に対し、０．１〜１０部添
加して付着し易いようにする。コーティング法としては
、ディッピング法、蒸着法、スパッター法等を使用する
ことができる。When using the coating method, silicone resins, styrene-butadiene copolymer resins, epoxy resins, acrylic resins, saturated or unsaturated polyester resins, polycarbonate resins, polyvinyl acetal resins, phenolic resins, polymethyl methacrylate ( PM
MA) 0.1 to 10 parts of resin, melamine resin, polyimide resin, etc. are added to each part of the charge generating material and the charge generating material to facilitate adhesion. As the coating method, a dipping method, a vapor deposition method, a sputtering method, etc. can be used.
また溶媒としては、バインダーの種類、電荷発生材料の
種類に依存するが、塩素系溶剤（クロロホルム、ジクロ
ルエタン、ジクロロメタン等）、ＴＨＦ、ジオキサン、
トルエン、ＭＥＫ、アルコール類を単独、又は混合で使
用するとよい。Examples of solvents include chlorinated solvents (chloroform, dichloroethane, dichloromethane, etc.), THF, dioxane,
Toluene, MEK, and alcohols may be used alone or in combination.
膜厚としては電荷発生層９ａを０．１〜１０μｍ、Ａｐ
［］層９ｂを０． ０１−１０μｍ （縦型、横型共に
）、電荷輸送層９Ｃを１０〜５０μｍの膜厚とするとよ
い。The thickness of the charge generation layer 9a is 0.1 to 10 μm, Ap
[ ] Layer 9b is 0. It is preferable that the charge transport layer 9C has a thickness of 10 to 50 μm (for both vertical and horizontal types).
このようにして形成された感光体における電荷輸送層上
には、必要に応じて放電強化層を着膜させるとよい、放
電強化材料としては電子放出特性の高いＢａＯ、ＣａＯ
、ＳｒＯ、ＭｇＯ、ＣｅＢイＣｓＳｂ、 ５ｂＲｂ−Ｃ
ｓ、 Ａｇ−０−Ｃｓ 、 Ｗ−Ｔｈ、 ＴｉＣ、Ｔｉ
Ｏ５ＹｚＯｓ、Ｌａ＊Ｏｚ 、ＤｙｔＯｓ 、Ｔｈ０１
等の金属化合物、もしくは金属酸化物等がイ吏用される
。A discharge strengthening layer may be deposited on the charge transport layer of the photoreceptor thus formed, if necessary.As the discharge strengthening material, BaO, CaO, etc., which have high electron emission properties, may be used.
, SrO, MgO, CeB-CsSb, 5bRb-C
s, Ag-0-Cs, W-Th, TiC, Ti
O5YzOs, La*Oz, DytOs, Th01
Metal compounds such as, metal oxides, etc. are used.
この放電強化層は蒸着法、スパック法、プラズマＣＶＤ
法、またバインダー中に分散させコーティングする方法
等の通常の薄膜形成手段により形成され、その膜厚は５
０人〜５ｏｏｏ人とするとよく、特に１００人〜１００
０人とすることが望ましい。This discharge strengthening layer can be formed by vapor deposition method, spacing method, plasma CVD method, etc.
It is formed by ordinary thin film forming means such as the method of dispersing in a binder and coating, and the film thickness is 5.
0 to 5ooo people, especially 100 to 100 people
It is desirable to have 0 people.
感光体支持体５としては、感光体を支持することができ
るある程度の強度を有していれば、厚み、材質は特に制
限がなく、例えば可撓性のあるプラスチックフィルム、
金属箔、紙、或いは硝子、プラスチックシート、金属板
（を極を兼ねることもできる）等の剛体が使用される。The thickness and material of the photoreceptor support 5 are not particularly limited as long as it has a certain level of strength to support the photoreceptor, such as a flexible plastic film,
A rigid body such as metal foil, paper, glass, plastic sheet, or metal plate (which can also serve as a pole) is used.
但し、感光体側から光を入射して情報を記録する装置に
用いられる場合には、当然その光を透過させる特性が必
要となり、例えば自然光を入射光とし、感光体側から入
射するカメラに用いられる場合には、厚み１ｍｍ程度の
透明なガラス板、或いはプラスチックのフィルム、シー
トが使用される。However, if it is used in a device that records information by entering light from the photoconductor side, it will naturally need to have the property of transmitting that light. For example, if it is used in a camera that uses natural light as incident light and enters from the photoconductor side. A transparent glass plate or a plastic film or sheet with a thickness of about 1 mm is used for this purpose.
感光体電極７は、感光体支持体５に金属のものが使用さ
れる場合を除いて感光体支持体５に形成され、その材質
は比抵抗値が１０’Ω・ｃｍ以下であれば限定されなく
、無機金属導電膜、無機金属酸化物導電膜等である。こ
のような感光体電極７は、感光体支持体５上に、蒸着、
スパッタリング、ＣＶＤ、コーティング、メツキ、ディ
ッピング、電解重合等により形成される。またその厚み
は、感光体電極７を構成する材質の電気特性、および情
報の記録の際の印加電圧により変化させる必要があるが
、例えばアルミニウムであれば、１００〜３０００人程
度である。この感光体電極７も感光体支持体５と同様に
、情報光を入射させる必要がある場合には、上述した光
学特性が要求され、例えば情報光が可視光（４００〜７
００ｎｍ）であれば、Ｉ Ｔｏ （Ｉｎｔ０３−５ｎ０
１） 、Ｓ ｎ Ｏ，等をスパッタリング、蒸着、また
はそれらの微粉末をバイングーと共にインキ化してコー
ティングしたような透明電極や、Ａｕ、ＡＩ、Ａｇ、Ｎ
ｌ、Ｃｒ等を蒸着、またはスパッタリングで作製する半
透明電橋、テトラシアノキノジメタン（Ｔ ＣＮ Ｑ）
、ポリアセチレン等のコーティングによる有ａｉ！ｉ明
電極等が使用される。The photoreceptor electrode 7 is formed on the photoreceptor support 5 except when metal is used for the photoreceptor support 5, and the material thereof is limited as long as the specific resistance value is 10'Ω·cm or less. Rather, they are inorganic metal conductive films, inorganic metal oxide conductive films, etc. Such a photoreceptor electrode 7 is formed on the photoreceptor support 5 by vapor deposition,
It is formed by sputtering, CVD, coating, plating, dipping, electrolytic polymerization, etc. Further, the thickness needs to be changed depending on the electrical characteristics of the material constituting the photoreceptor electrode 7 and the applied voltage when recording information; for example, in the case of aluminum, the thickness is about 100 to 3000. Similar to the photoreceptor support 5, this photoreceptor electrode 7 is also required to have the above-mentioned optical characteristics when information light needs to be incident thereon.
00nm), I To (Int03-5n0
1) Transparent electrodes coated with sputtering or vapor deposition of ,SnO, etc., or by making ink with fine powder thereof, Au, AI, Ag, N
Tetracyanoquinodimethane (T CN Q), a translucent electric bridge made by vapor deposition or sputtering of L, Cr, etc.
, ai! by coating with polyacetylene, etc. A bright electrode or the like is used.
また情報光が赤外（７００ｎｍ以上）光の場合も上記電
極材料が使用できるが、場合によっては可視光をカット
するために、着色された可視光吸収電極も使用できる。The above electrode materials can also be used when the information light is infrared light (700 nm or more), but in some cases, colored visible light absorbing electrodes can also be used to cut visible light.
更に、情報光が紫外（４００ｎｍ以下）光の場合も、上
記電極材料を基本的には使用できるが、電極基板材料が
紫外光を吸収するもの（有機高分子材料、ソーダガラス
等）は好ましくなく、石英ガラスのような紫外光を透過
する材料が好ましい。Furthermore, when the information light is ultraviolet light (400 nm or less), the above electrode materials can basically be used, but electrode substrate materials that absorb ultraviolet light (organic polymer materials, soda glass, etc.) are not preferred. A material that transmits ultraviolet light, such as quartz glass, is preferred.
また光の入射面には反射防止膜を形成するとよい、この
反射防止膜はフン化マグネシウム、酸化チタン等の無機
酸化物を単層あるいは複数層で形成することができる。Further, it is preferable to form an antireflection film on the light incident surface, and this antireflection film can be formed of a single layer or multiple layers of an inorganic oxide such as magnesium fluoride or titanium oxide.
次ぎに本発明の静電画像記録方法について、第３図によ
り説明する０図中、１は感光体、３は電荷保持媒体、１
１は電荷保持層、１３は電荷保持媒体電橋、１５は電荷
保持媒体支持体、１７は電源である。Next, the electrostatic image recording method of the present invention will be explained with reference to FIG.
1 is a charge retention layer, 13 is a charge retention medium bridge, 15 is a charge retention medium support, and 17 is a power source.
本発明の感光体により静電潜像が形成される電荷保持媒
体３は電極１３上に電荷保持ＪＨＩＩを積層することに
より形成され、電荷保持層１１は電荷の移動を抑えるた
め高絶縁性の高分子材料からなるものであり、比抵抗で
１０１４Ω・ｃｓ以上の絶縁性を有することが要求され
る。また１！倚保持層を構成する高分子材料としてはそ
のガラス転移温度が使用環境温度以上であることが必要
である。The charge retention medium 3 on which an electrostatic latent image is formed by the photoreceptor of the present invention is formed by laminating charge retention JHII on the electrode 13, and the charge retention layer 11 is made of highly insulating high It is made of a molecular material and is required to have insulation properties with a specific resistance of 10 14 Ω·cs or more. 1 again! The polymer material constituting the retention layer must have a glass transition temperature equal to or higher than the operating environment temperature.
このような高分子材料は、樹脂としては熱可塑性樹脂、
或いは熱硬化性樹脂、紫外線硬化性樹脂、電子線硬化性
樹脂等のエネルギー線硬化樹脂、或いはエンジニアリン
グプラスチック等を使用することができ、熱可塑性樹脂
としては例えば弗素樹脂、例えばポリテトラフルオロエ
チレン、弗素化エチレンプロピレン、テトラフルオロエ
チレン−パーフルオロアルキルビニルエーテル共重合体
、またそれらのディスバージョンタイプ、または変性タ
イプ（コーティングタイプ）、またポリエーテルエーテ
ルケトン樹脂、ポリバラキシリレン等を使用し、電荷保
持媒体電極上にコーティング、蒸着することにより層形
成されるものである。Such polymeric materials include thermoplastic resins,
Alternatively, energy ray curable resins such as thermosetting resins, ultraviolet ray curable resins, and electron beam curable resins, or engineering plastics can be used. Examples of thermoplastic resins include fluororesins, such as polytetrafluoroethylene, fluorine resins, etc. By using ethylene propylene, tetrafluoroethylene-perfluoroalkyl vinyl ether copolymer, their dispersion type or modified type (coating type), polyether ether ketone resin, polyvaraxylylene, etc., charge retention medium electrodes can be used. A layer is formed by coating or vapor deposition on top.
第３図においては、このような電荷保持媒体３に本発明
の感光体１側から露光を行い電荷保持媒体上に静電潜像
を形成させる態様を示す。FIG. 3 shows a mode in which such a charge holding medium 3 is exposed to light from the photoreceptor 1 side of the present invention to form an electrostatic latent image on the charge holding medium.
感光体ｌに対して、ＩＯμｍ程度の空隙を介して電荷保
持媒体３が配置される。電荷保持媒体３は、電荷保持層
支持体１５上に電極層を形成し、この電極上に電荷保持
層１１を形成したものである。The charge retention medium 3 is placed with respect to the photoconductor 1 with a gap of about IO μm in between. The charge retention medium 3 has an electrode layer formed on a charge retention layer support 15, and a charge retention layer 11 formed on this electrode.
まず、同図（イ）に示すように感光体１に対して、１０
μｍ程度の空隙を介して電荷保持媒体３をセットし、同
図（ロ）に示すように電源１７により電極７．１３間に
電圧を印加する。暗所であれば光導電Ｎ９は高抵抗体で
あるため、電極間には何の変化も生じない、感光体１側
より光が入射す名−と、光が入射した部分の光導電層９
は導電性を示し、電荷保持層１１との間に放電が生じ、
電荷保持層１１に電荷が蓄積される。First, as shown in the same figure (a), 10
The charge holding medium 3 is set through a gap of approximately μm, and a voltage is applied between the electrodes 7 and 13 by the power source 17 as shown in FIG. In the dark, the photoconductive layer 9 is a high-resistance material, so no change occurs between the electrodes.
exhibits conductivity, and a discharge occurs between it and the charge retention layer 11,
Charges are accumulated in the charge retention layer 11 .
露光が終了したら、同図（ハ）に示すように電圧をＯＦ
Ｆにし、次いで同図（ニ）に示すように電荷保持媒体３
を取り出すことにより静電潜像の形成が終了する。When the exposure is completed, turn off the voltage as shown in the same figure (c).
F, and then charge retention medium 3 as shown in the same figure (d).
By taking out the electrostatic latent image, the formation of the electrostatic latent image is completed.
このようにして画像が情報電荷として蓄積されるが、こ
の電荷保持層上に絶縁性保護膜を積層するとよく、これ
により情報電荷は明所、暗所に関係なく放電せず長期間
保存される。情報電荷は単に表面に蓄積させる場合もあ
り、また微視的には絶縁体表面付近内部に侵入し、その
物質の構造内に電子またはホールがトラップされる場合
もあるので長期間の保存が行われる。In this way, images are stored as information charges, but it is best to layer an insulating protective film on this charge retention layer, so that the information charges are stored for a long time without being discharged, regardless of whether it is in a bright or dark place. . Information charges may simply accumulate on the surface, or they may microscopically penetrate into the interior near the surface of the insulator, trapping electrons or holes within the structure of the material, resulting in long-term storage. be exposed.
本発明の電荷保持媒体への情報入力方法としては、高解
像度静電カメラによる方法、またレーザーによる記録方
法がある。まず本願発明で使用される高解像度静電カメ
ラは、通常のカメラに使用されている写真フィルムの代
わりに、感光体と電荷保持媒体とにより記録部材を構成
し、画電極へ電圧を印加し、入射光に応じて光導電層を
導電性として入射光量に応じて電荷保持層上に電荷を蓄
積させることにより入射光学像の静電潜像を電荷蓄積媒
体上に形成するもので、機械的なシャッタも使用しうる
し、また電気的なシャンクも使用しうるものである。ま
た静電潜像は明所、暗所に関係なく長期間保持すること
が可能である。またプリズムにより光情報を、Ｒ，Ｇ、
Ｂ光成分に分離し、平行光として取り出すカラーフィル
ターを使用し、Ｒ，Ｇ、８分解した電荷保持媒体３セツ
トで１コマを形成するか、またはｌ平面上にＲ，Ｇ、Ｂ
像を並べて１セントで１コマとすることにより、カラー
憑影することもできる。Methods for inputting information to the charge retention medium of the present invention include a method using a high-resolution electrostatic camera and a recording method using a laser. First, the high-resolution electrostatic camera used in the present invention consists of a recording member made of a photoreceptor and a charge holding medium instead of the photographic film used in ordinary cameras, and a voltage is applied to the picture electrode. This method forms an electrostatic latent image of an incident optical image on a charge storage medium by making the photoconductive layer conductive depending on the incident light and accumulating charges on the charge storage layer depending on the amount of incident light. A shutter could also be used, and an electric shank could also be used. Further, the electrostatic latent image can be retained for a long period of time regardless of whether it is in a bright place or a dark place. In addition, the prism transmits optical information such as R, G,
Using a color filter that separates the B light component and extracts it as parallel light, one frame is formed with three sets of charge holding media divided into R, G, and 8 parts, or R, G, and B are separated on the l plane.
By arranging the images and making one frame for 1 cent, it is also possible to create a color image.
またレーザーによる記録方法としては、光源としてはア
ルゴンレーザー（５１４，４８８ｎｍ＞、ヘリウム−ネ
オンレーザ−（６３３ｎｍ）、半導体レーザー（７８０
ｎｍ、８１０ｎｍ等）が使用でき、感光体と電荷保持媒
体を面状で表面同志を、密着させるか、一定の間隔をお
いて対向させ、電圧印加する。この場合感光体のキャリ
アの極性と同じ極性に感光体電極をセントするとよい、
この状態で画像信号、文字信号、コード信号、線画信号
に対応したレーザー露光をスキャニングにより行うもの
である０画像のようなアナログ的な記録は、レーザーの
光強度を変調して行い、文字、コード、線画のようなデ
ジタル的な記録は、レーザー光のＯＮ−ＯＦＦｗＵ御に
より行う、また画像において網点形成されるものには、
レーザー光にドツトジェネレーター０Ｎ−ＯＦＦｉ４御
をかけて形成するものである。In addition, as a recording method using a laser, the light source is an argon laser (514,488 nm>, a helium-neon laser (633 nm), a semiconductor laser (780 nm),
(nm, 810 nm, etc.), and a voltage is applied to the photoreceptor and the charge holding medium with their surfaces brought into close contact with each other or facing each other at a fixed interval. In this case, it is recommended to center the photoreceptor electrode with the same polarity as the carrier of the photoreceptor.
In this state, laser exposure corresponding to image signals, character signals, code signals, and line drawing signals is performed by scanning. Analog recording such as 0 images is performed by modulating the light intensity of the laser, , Digital recording such as line drawings is performed by ON-OFF control of laser light, and halftone dots are formed in images.
It is formed by applying dot generator ON-OFFi4 control to laser light.
次ぎに記録された静電画像の再生方法について説明する
。Next, a method for reproducing a recorded electrostatic image will be explained.
第４図は本発明の電荷保持媒体の静電画像再生方法にお
ける電位読み取り方法の例を示す図で、第１図と同一番
号は同一内容を示している。なお、図中２１は電位読み
取り部、２３は検出電極、２５はガード電極、２７はコ
ンデンサ、２９は電圧計である。FIG. 4 is a diagram showing an example of a potential reading method in the electrostatic image reproduction method of a charge holding medium of the present invention, and the same numbers as in FIG. 1 indicate the same contents. In the figure, 21 is a potential reading section, 23 is a detection electrode, 25 is a guard electrode, 27 is a capacitor, and 29 is a voltmeter.
電位読み取り部２１を電荷保持媒体３の電荷蓄、積面に
対向させると、検出電極２３に電荷保持媒体３の電荷保
持層ｌｌ上に蓄積された電荷によって生じる電界が作用
し、検出電極面上に電荷保持媒体上の電荷と等量の誘導
電荷が生ずる。この誘導電荷と逆極性の等量の電荷でコ
ンデンサ２７が充電されるので、コンデンサの電極間に
蓄積Ｔｌ荷に応じた電位差が生じ、この値を電圧計２９
で読むことによって電荷保持体の電位を求めることがで
きる。そして、電位読み取り部２１で電荷保持媒体面上
を走査することにより静電潜像を電気信号として出力す
ることができる。なお、検出電極２３だけでは電荷保持
媒体の検出電極対向部位よりも広い範囲の電荷による電
界（を気力線）が作用して分解能が落ちるので、検出電
極の周囲に接地したガード電極２５を配置するようにし
てもよい、これによって、電気力線は面に対して垂直方
向を向くようになるので、検出電極２３に対向した部位
のみの電気力線が作用するようになり、検出電極面積に
略等しい部位の電位を読み取ることができる。電位読み
取りの精度、分解能は検出電極、ガード電極の形状、大
きさ、及び電荷保持媒体との間隔によって大きく変わる
ため、要求される性能に合わせて最適条件を求めて設計
する必要がある。When the potential reading unit 21 is placed to face the charge storage layer 11 of the charge storage medium 3, an electric field generated by the charges accumulated on the charge storage layer 11 of the charge storage medium 3 acts on the detection electrode 23, and An induced charge equal to the charge on the charge retention medium is generated. Since the capacitor 27 is charged with an equal amount of charge of opposite polarity to this induced charge, a potential difference corresponding to the accumulated Tl load is generated between the electrodes of the capacitor, and this value is measured by the voltmeter 29.
The potential of the charge carrier can be determined by reading the . Then, by scanning the surface of the charge holding medium with the potential reading section 21, the electrostatic latent image can be output as an electrical signal. Note that if only the detection electrode 23 is used, the electric field (air line) due to charges in a wider area than the area facing the detection electrode of the charge retention medium will act and the resolution will be degraded, so a grounded guard electrode 25 is arranged around the detection electrode. As a result, the lines of electric force are oriented perpendicularly to the surface, so that the lines of electric force only act on the area facing the detection electrode 23, and the area of the detection electrode is approximately reduced. It is possible to read the potential of equal parts. Since the accuracy and resolution of potential reading vary greatly depending on the shape and size of the detection electrode and guard electrode, and the distance between them and the charge retention medium, it is necessary to find and design optimal conditions according to the required performance.
また電荷保持媒体における像電荷を、反射防止膜を設け
た電荷保持媒体電極側からレーザー光等を照射し、電気
光学結晶を介して情報として再生してもよい、この場合
電荷保持媒体はその構成材料は透明材料で形成する必要
がある。また電気光学結晶はその光路中に配置するとよ
く、このような電気光学結晶としてはチタン酸バリウム
、タンタル酸リチウム（ＬｉＴａ０ｓ）等電気光学効果
を有するものを使用するとよい。Alternatively, the image charge on the charge holding medium may be reproduced as information through an electro-optic crystal by irradiating a laser beam or the like from the side of the charge holding medium electrode provided with an antireflection film. In this case, the charge holding medium is The material must be made of transparent material. Further, an electro-optic crystal is preferably disposed in the optical path, and as such an electro-optic crystal, it is preferable to use a material having an electro-optic effect such as barium titanate or lithium tantalate (LiTa0s).
第５図は静電画像再生方法の概略構成を示す図で、図中
、６１は電位読み取り装置、６３は増幅器、６５はＣＲ
Ｔ、６７はプリンタである。FIG. 5 is a diagram showing a schematic configuration of an electrostatic image reproduction method, in which 61 is a potential reading device, 63 is an amplifier, and 65 is a CR
T, 67 is a printer.
図において、電位読み取り装置６１で電荷電位を検出し
、検出出力を増幅器６３で増幅してＣＲＴ６５で表示し
、またプリンタ６７でプリントアウトすることができる
。この場合、任意の時に、読み取りたい部位を任意に選
択して出力させることができ、また反復再生することが
可能である。In the figure, a potential reading device 61 detects the charge potential, and an amplifier 63 amplifies the detected output, which can be displayed on a CRT 65 and printed out using a printer 67. In this case, it is possible to arbitrarily select and output the part to be read at any time, and it is also possible to reproduce it repeatedly.
また静電潜像が電気信号として得られるので、必要に応
じて他の記録媒体への記録等に利用することも可能であ
る。Furthermore, since the electrostatic latent image is obtained as an electrical signal, it can also be used for recording on other recording media, etc., if necessary.
感光体は、感光することにより光導電層で生成される光
キヤリア−（例えば電子ｅ）が電荷保持媒体との電界に
引かれて移動し、感光体の対向表面に達し、電荷保持媒
体との空気ギャップにおいて放電現象又は空気のイオン
化現象を生じ、電荷保持媒体に露光量に応じた像情報を
静電荷の形として記録することができるものである。When a photoreceptor is exposed to light, photocarriers (e.g., electrons) generated in the photoconductive layer are attracted by the electric field with the charge retention medium, move, reach the opposite surface of the photoreceptor, and form a contact with the charge retention medium. A discharge phenomenon or an ionization phenomenon of air occurs in the air gap, and image information corresponding to the amount of exposure can be recorded in the form of electrostatic charges on a charge retention medium.
本発明の超格子ＡＰＤを使用した感光体は、光導電層と
して電荷発生層、超格子ＡＰＤ層、電荷輸送層を順次積
層して形成することにより、電圧印加時露光により電荷
発生層において形成された光キャリアーがＡＰＤ層にお
いて増幅され、電荷輸送層により電荷保持媒体との対向
表面に達し、電荷保持媒体に像電荷を形成することがで
きるので、入射光が弱い場合でも増幅して電荷保持媒体
に電荷を形成することができ、また露光部と未露光部で
のコントラスト比の高い静電画像を電荷保持媒体に得る
ことができるものである。A photoreceptor using the superlattice APD of the present invention is formed by sequentially laminating a charge generation layer, a superlattice APD layer, and a charge transport layer as a photoconductive layer. The photocarriers are amplified in the APD layer, reach the surface facing the charge storage medium by the charge transport layer, and can form an image charge on the charge storage medium, so even if the incident light is weak, it can be amplified and transferred to the charge storage medium. In addition, an electrostatic image with a high contrast ratio between the exposed area and the unexposed area can be obtained on the charge retaining medium.
以下、実施例を説明する。Examples will be described below.
〔実施例１〕
ガラス基板（１ｍｍ厚）上に、ＩＴＯｉ３明電極を１０
００人、スパッタ法で設け、その電極上に電荷発生層と
してアモルファスシリコン層をプラズマＣＶＤ法により
２μｍの膜厚に積層して電荷発生層を形成した０次いで
そのアモルファスシリコン層上に、縦型超格子ＡＰＤと
してＧａ−Ａｓを使用した下記の単位組成式、
Ａｌｅ、 ａｓＧａｏ、 ５ｓＡｓ（５５０人）／ Ｇ
ａＡｓ（４５０人）のｐｎ接合を５０周期積層した膜ｒ
！Ｌ５μｍのものを、その２層面から電荷発生層上にＭ
ＢＥ法を使用して積層した。[Example 1] 10 ITOi3 bright electrodes were placed on a glass substrate (1 mm thick).
00 people, a charge generation layer was formed by sputtering, and a charge generation layer was formed by laminating an amorphous silicon layer as a charge generation layer on the electrode to a thickness of 2 μm by plasma CVD.Next, a vertical superstructure was formed on the amorphous silicon layer. The following unit composition formula using Ga-As as the lattice APD: Ale, asGao, 5sAs (550 people)/G
A film r made by laminating 50 cycles of pn junctions of aAs (450 people)
! M
Lamination was performed using the BE method.
このＡＰＤ層上に、次いで電荷輸送層としてａ−３ｓ層
を２０μｍの膜厚で、真空蒸着法（ｌＯ−’Ｔｏｒｒ、
抵抗加熱）により積層し、本発明の感光体ｌを作製した
。On this APD layer, an a-3s layer with a thickness of 20 μm was deposited as a charge transport layer using a vacuum evaporation method (lO-'Torr,
The photoreceptor 1 of the present invention was produced by laminating the layers by resistance heating (resistance heating).
一方Ａｌを１０００人蒸着レムガラス基板（１＋ｓｍ厚
）に、シリコン樹脂溶液（ＴＳＲ−１４４、ＣＲ−１５
，１％；東芝シリコン社製）をスピンナーコーティング
法（１０００ｒｐｓ Ｘ ３０ｓ）で塗布し、１５０℃
、１時間乾燥させ、７μｍの膜厚の電荷保持層を有する
電荷保持媒体３を作製した。On the other hand, Al was deposited on a REM glass substrate (1+sm thickness) by 1000 people, and a silicone resin solution (TSR-144, CR-15
, 1%; manufactured by Toshiba Silicon Corporation) by a spinner coating method (1000 rps x 30 s) and heated at 150°C.
, and dried for 1 hour to produce a charge retention medium 3 having a charge retention layer with a thickness of 7 μm.
この感光体と電荷保持媒体とを、第３図に示すように対
向させ、１０．ｃａｍの空気ギャップをＰＥＴフィルム
ｌＯμｍのスペーサにより形成し、両電極間に■↑０側
を正極とし７５０Ｖの電圧印加を行い、その状態でｌＯ
ルックスのハロゲンランプ光を１秒間パターン露光し、
露光終了と同時に電圧もＯＦＦとした。10. The photoreceptor and the charge holding medium are placed facing each other as shown in FIG. The air gap of the cam is formed with a PET film lOμm spacer, and a voltage of 750V is applied between both electrodes with the ↑0 side as the positive electrode, and in that state lO
Pattern exposure for 1 second with LUX halogen lamp light,
At the same time as the exposure ended, the voltage was also turned off.
露光終了後、電荷保持媒体を取り出し、その表面電位を
測定したところ、露光部では＋４００νの電位が測定さ
れ、又未露光部では電位は＋１ｓｏｖであった。After the exposure was completed, the charge holding medium was taken out and its surface potential was measured, and a potential of +400v was measured in the exposed area, and a potential of +1 sov in the unexposed area.
実施例における光導電層としてＡＰＤ層を設けないで電
荷発生層、電荷輸送層とから形成した感光体を使用し、
実施例同様に静電画像記録を行ったところ、電荷保持媒
体における露光部では１５０ｖ、未露光部では１００ｖ
であった。Using a photoreceptor formed from a charge generation layer and a charge transport layer without providing an APD layer as the photoconductive layer in the example,
When electrostatic image recording was performed in the same manner as in the example, the charge retention medium had a voltage of 150 V in the exposed area and 100 V in the unexposed area.
Met.
本発明のＡＰＤ層を設けた感光体と比較すると、露光部
での電荷量が低く、また露光部と未露光部でのコントラ
スト比があまり鮮明ではないものが得られた。Compared to the photoconductor provided with the APD layer of the present invention, the amount of charge in the exposed area was low, and the contrast ratio between the exposed area and the unexposed area was not very sharp.
本発明の超格子ＡＰＤを使用した感光体は、生成した光
キャリアーの増幅機能を有し、電荷保持媒体と組み合わ
せた静電画像記録方法に使用されることにより、露光部
での高い像！荷量を電荷保持媒体に与えることができ、
また露光部と未露光部でのコントラスト比の高い静電画
像を電荷保持媒体に得ることができるものである。The photoreceptor using the superlattice APD of the present invention has a function of amplifying the generated photocarriers, and when used in an electrostatic image recording method in combination with a charge retention medium, it can produce a high image quality in the exposed area. A charge can be imparted to the charge retention medium,
Furthermore, an electrostatic image with a high contrast ratio between exposed and unexposed areas can be obtained on a charge retention medium.
第１図は本発明の感光体の断面図、第２図は本発明で使
用する超格子ＡＰＤのエネルギーバンドを説明するため
の図、第３図は本発明の静電画像記録方法を説明するた
めの図、第４図は直流増幅型の電位読み取り方法の例を
示す図、第５図は静電画像再生の概略構成を示す図であ
る。
図中１は感光体、３は電荷保持媒体、５は感光体支持体
、７は感光体電極、９は光導電層で、９ａは電荷発生層
、９ｂは超格子ＡＰＤＩｉ、９ｃは電荷輸送層、１１は
電荷保持層、１３は電荷保持媒体電極、１５は電荷保持
媒体支持体、１７・・・電源を示す。
出 願 人 大日本印刷株式会社代理人 弁理士
内１）亘彦（外５名）第２囚
（ニ）
第１図
（ホ）
第３図
（ハ）
第４
図FIG. 1 is a cross-sectional view of the photoreceptor of the present invention, FIG. 2 is a diagram for explaining the energy band of the superlattice APD used in the present invention, and FIG. 3 is a diagram for explaining the electrostatic image recording method of the present invention. FIG. 4 is a diagram showing an example of a DC amplification type potential reading method, and FIG. 5 is a diagram showing a schematic configuration for electrostatic image reproduction. In the figure, 1 is a photoreceptor, 3 is a charge retention medium, 5 is a photoreceptor support, 7 is a photoreceptor electrode, 9 is a photoconductive layer, 9a is a charge generation layer, 9b is a superlattice APDIi, and 9c is a charge transport layer. , 11 is a charge retention layer, 13 is a charge retention medium electrode, 15 is a charge retention medium support, and 17... is a power source. Applicant Dainippon Printing Co., Ltd. Agent Patent attorney (1) Nobuhiko (5 others) 2nd prisoner (d) Figure 1 (E) Figure 3 (C) Figure 4
Claims (2)
ランシェホトダイオード層、電荷輸送層を順次積層した
ことを特徴とする超格子アバランシェホトダイオードを
使用した感光体。(1) A photoreceptor using a superlattice avalanche photodiode, characterized in that a charge generation layer, a superlattice avalanche photodiode layer, and a charge transport layer are sequentially laminated as photoconductive layers on an electrode.
て電荷発生層、超格子アバランシェホトダイオード、電
荷輸送層を順次積層した感光体と、後面に電極が設けら
れた電荷保持層からなる電荷保持媒体とを対向させ、接
触又は非接触で配置し、両電極間に電圧印加時露光し、
電荷保持媒体に露光パターンに対応する静電荷パターン
を形成することを特徴とする静電画像記録方法。(2) Consisting of a photoreceptor with an electrode on the front surface, a photoconductive layer on which a charge generation layer, a superlattice avalanche photodiode, and a charge transport layer are sequentially laminated, and a charge retention layer with an electrode on the rear surface. A charge holding medium is placed facing each other in contact or non-contact, and exposed when a voltage is applied between both electrodes,
An electrostatic image recording method comprising forming an electrostatic charge pattern corresponding to an exposure pattern on a charge holding medium.
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1067246A JPH02245761A (en) | 1989-03-18 | 1989-03-18 | Photosensitive body using superlattice avalanche photodiode and electrostatic charge image recording method |
| PCT/JP1990/000340 WO1990011551A1 (en) | 1989-03-17 | 1990-03-15 | Photosensitive member and electrostatic data recording method |
| DE69033133T DE69033133T2 (en) | 1989-03-17 | 1990-03-15 | Electrostatic process for recording and reproducing information |
| EP90904691A EP0422238B1 (en) | 1989-03-17 | 1990-03-15 | Electrostatic information recording and reproducing method |
| CA002028864A CA2028864A1 (en) | 1989-03-17 | 1990-03-15 | Photosensitive member and electrostatic information recording method |
| US08/520,854 US6025857A (en) | 1989-03-17 | 1995-08-30 | Photosensitive member and electrostatic information recording method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1067246A JPH02245761A (en) | 1989-03-18 | 1989-03-18 | Photosensitive body using superlattice avalanche photodiode and electrostatic charge image recording method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02245761A true JPH02245761A (en) | 1990-10-01 |
Family
ID=13339374
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1067246A Pending JPH02245761A (en) | 1989-03-17 | 1989-03-18 | Photosensitive body using superlattice avalanche photodiode and electrostatic charge image recording method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02245761A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5903296A (en) * | 1993-04-26 | 1999-05-11 | Dai Nippon Printing Co., Ltd. | Photoelectric sensor, information recording system and information recording and reproducing method |
-
1989
- 1989-03-18 JP JP1067246A patent/JPH02245761A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5903296A (en) * | 1993-04-26 | 1999-05-11 | Dai Nippon Printing Co., Ltd. | Photoelectric sensor, information recording system and information recording and reproducing method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5424156A (en) | Electrostatic information recording medium and method of recording and reproducing electrostatic information | |
| EP1033706B1 (en) | Electrostatic information recording medium and electrostatic information recording and reproducing method | |
| US6025857A (en) | Photosensitive member and electrostatic information recording method | |
| EP0422238B1 (en) | Electrostatic information recording and reproducing method | |
| JPH02245761A (en) | Photosensitive body using superlattice avalanche photodiode and electrostatic charge image recording method | |
| JP2842870B2 (en) | Electrostatic image recording / reproducing method | |
| JP2619948B2 (en) | Injection charge control type photoconductor | |
| JP2667222B2 (en) | Electrostatic image recording medium | |
| JP2716975B2 (en) | Charge holding medium on which voice and image information are recorded, and method for recording and reproducing the same | |
| JP2826119B2 (en) | Photoreceptor having photoelectron doubling effect and electrostatic image recording method | |
| JP2732855B2 (en) | Electrostatic camera with voice information input function | |
| JP2980349B2 (en) | Electrostatic information recording method | |
| JP2795851B2 (en) | Electrostatic image recording medium and charge holding medium | |
| JPH02245766A (en) | Amorphous silicon photosensitive body and electrostatic charge image recording method | |
| JP2667198B2 (en) | Charge retention medium | |
| JP2835368B2 (en) | Image forming method and image forming apparatus | |
| JPH02244160A (en) | Selenium photosensitive body and electrostatic image recording method | |
| JP2912429B2 (en) | Information recording medium, electrostatic information recording method, and electrostatic information recording / reproducing method | |
| JP2962780B2 (en) | Photoreceptor and electrostatic information recording method | |
| JP2980350B2 (en) | Electrostatic information recording method | |
| JPH02245763A (en) | Manufacture of photosensitive body with filter | |
| JPH03231754A (en) | A-selenium/tellurium photosensitive body and electrostatic information recording method | |
| JP3112515B2 (en) | Electrostatic information recording method | |
| JPH02242260A (en) | Photosensitive body containing dispersed photoconductive fine particles | |
| JPH01298860A (en) | Input scanner reading electrostatic latent image |