JPH02244782A - Frequency stabilized semiconductor laser driver - Google Patents
Frequency stabilized semiconductor laser driverInfo
- Publication number
- JPH02244782A JPH02244782A JP6549289A JP6549289A JPH02244782A JP H02244782 A JPH02244782 A JP H02244782A JP 6549289 A JP6549289 A JP 6549289A JP 6549289 A JP6549289 A JP 6549289A JP H02244782 A JPH02244782 A JP H02244782A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor laser
- output
- photodetector
- fabry
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 48
- 238000010521 absorption reaction Methods 0.000 claims description 23
- 238000001228 spectrum Methods 0.000 abstract description 7
- 230000005540 biological transmission Effects 0.000 abstract description 2
- 238000000034 method Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 230000007774 longterm Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- 230000000087 stabilizing effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000006094 Zerodur Substances 0.000 description 1
- BJQHLKABXJIVAM-UHFFFAOYSA-N bis(2-ethylhexyl) phthalate Chemical compound CCCCC(CC)COC(=O)C1=CC=CC=C1C(=O)OCC(CC)CCCC BJQHLKABXJIVAM-UHFFFAOYSA-N 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
- H01S5/0687—Stabilising the frequency of the laser
Landscapes
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
〈産業上の利用分野〉
この発明は、半導体レーザーを制御してその出力光の周
波数を安定化する周波数安定化半導体レーザー装置に関
し、特に周波数の安定化と発振スペクトルの狭帯域化と
を同時に実現出来る周波数安定化半導体レーザー装置に
関するものである。[Detailed Description of the Invention] <Industrial Application Field> The present invention relates to a frequency-stabilized semiconductor laser device that controls a semiconductor laser to stabilize the frequency of its output light, and particularly to a frequency-stabilized semiconductor laser device that controls a semiconductor laser to stabilize the frequency of its output light. The present invention relates to a frequency-stabilized semiconductor laser device that can achieve band narrowing at the same time.
〈従来技術〉
半導体レーザーは小型でかつ信頼性が高いという特徴が
あるが、その出力の周波数が周囲条件等によって変化し
、また光スペクトルの半値幅が広いという欠点がある。<Prior Art> Semiconductor lasers have the characteristics of being small and highly reliable, but have the disadvantage that the frequency of their output changes depending on the surrounding conditions and the half-width of the optical spectrum is wide.
第６図でこの様な半導体レーザーの欠点を改良する波長
安定化装置を説明する。第６図において、半導体レーザ
ーＬ Ｄは恒温槽に入れられ、その周囲温度が制御され
る。恒温槽は温度コントローラ１゛Ｃで制御される。こ
の半導体レーザーＬＤの出力光はレンズＬで集束され、
ハーフミラ−ＨＭで２つに分岐される。ハーフミラ−Ｈ
Ｍの透過光は出力光として外部に出力され、反射光は１
／２λ波長板Ｚを透過して偏光ビームスプリッタＰＢＳ
に入射され、２つに分岐される。With reference to FIG. 6, a wavelength stabilizing device for improving such drawbacks of semiconductor lasers will be explained. In FIG. 6, the semiconductor laser LD is placed in a constant temperature bath, and its ambient temperature is controlled. The constant temperature bath is controlled by a temperature controller 1°C. The output light of this semiconductor laser LD is focused by a lens L,
It is split into two by half mirror HM. Half mirror H
The transmitted light of M is outputted to the outside as output light, and the reflected light is 1
/2λ wavelength plate Z and polarizing beam splitter PBS
The beam is input into the , and is split into two.
分岐された一方の光は第１の光電変換素子ＰＤＩでその
強度が電気信号に変換され、第１の＃！Ｉ幅器Ｇ１で増
幅され、この第１の増幅器Ｇ１の出力は積分器Ｂに入力
される。偏光ビームスプリッタＰＢ、 Ｓで分岐された
他方の光はフアブリペロー干渉計等の波長選択素子Ｅに
入射され、その透過光は第２の充電変換素子ＰＤ２で電
気信号に変換されて積分器Ｂに入力される。積分器Ｂは
入力された２つの光電変換素子の信号の差を積分する。The intensity of one of the branched lights is converted into an electrical signal by the first photoelectric conversion element PDI, and the first #! It is amplified by an I amplifier G1, and the output of this first amplifier G1 is input to an integrator B. The other light split by the polarizing beam splitters PB and S is input to a wavelength selection element E such as a Fabry-Perot interferometer, and the transmitted light is converted into an electrical signal by a second charging conversion element PD2 and input to an integrator B. be done. Integrator B integrates the difference between the input signals of the two photoelectric conversion elements.
積分器Ｂの出力は第２の増幅器Ｇ２で増幅され、その出
力は半導体レーザーＬＤの駆動電流を制御してその出力
光の波長を変化させる。この様な構成では、半導体レー
ザーＬ Ｄの出力光の波長を波長選択素子Ｅの透過光強
度の波長特性のスロープの位置に制御するので、その波
長を安定化する事が出来る。また、半導体レーザーＬＤ
の出力光を２つに分岐し、波長選択素子Ｅを透過した光
と透過しない光の差で半導体レーザーＬＤを制御するよ
うにしなので、半導体レーザーＬＤの出力光強度が変化
しても動作点がずれないという特徴もある。The output of the integrator B is amplified by the second amplifier G2, and the output controls the drive current of the semiconductor laser LD to change the wavelength of the output light. In this configuration, the wavelength of the output light of the semiconductor laser LD is controlled to be at the slope of the wavelength characteristic of the transmitted light intensity of the wavelength selection element E, so that the wavelength can be stabilized. In addition, semiconductor laser LD
Since the output light of the semiconductor laser LD is branched into two and the semiconductor laser LD is controlled by the difference between the light that passes through the wavelength selection element E and the light that does not pass through the wavelength selection element E, the operating point remains unchanged even if the output light intensity of the semiconductor laser LD changes. It also has the feature of not shifting.
〈発明が解決すべき課題〉
しかしながら、このような半導体レーザーの波長安定化
装置には次のような課題がある。波長選択素子としては
フアブリペロー干渉計又はＲｂのような特定の波長の光
のみ吸収する標準物質を封入した吸収セル等を用いるが
、フアブリペロー干渉計を使用する場合光スペクトルの
狭帯域化を行うことは出来るが、その透過光の強度特性
は２つの半透鏡の間隔によって決まるので長期的に安定
化する事は困難であった。また光の速度は空気の屈折率
によって変化するので、周波数を安定化する事が出来な
かった。一方、吸収セルは原子の吸収特性を利用してい
るので長期的な安定性は十分あるが、吸収セル自身がノ
イズを発生するので出力光のスペクトルを狭帯域化する
ことが出来なかった。<Problems to be Solved by the Invention> However, such wavelength stabilizing devices for semiconductor lasers have the following problems. As a wavelength selection element, a Fabry-Perot interferometer or an absorption cell containing a standard substance that absorbs only light of a specific wavelength, such as Rb, is used, but when using a Fabry-Perot interferometer, it is not possible to narrow the optical spectrum. However, since the intensity characteristics of the transmitted light are determined by the distance between the two semi-transparent mirrors, it has been difficult to stabilize it over the long term. Also, since the speed of light changes depending on the refractive index of the air, it was not possible to stabilize the frequency. On the other hand, absorption cells utilize the absorption characteristics of atoms, so they have sufficient long-term stability, but the absorption cells themselves generate noise, making it impossible to narrow the spectrum of output light.
〈発明の目的〉
この発明の目的は、周波数の安定化と出力光のスペクト
ルの狭帯域化が同時に行える周波数安定化半導体レーザ
ー装置を提供する事にある。<Object of the Invention> An object of the invention is to provide a frequency-stabilized semiconductor laser device that can simultaneously stabilize the frequency and narrow the spectrum of output light.
く課題を解決する為の手段〉
前記課題を解決する為に本発明は、半導体レーザーの出
力光を吸収セルとフアブリペロー干渉計に入射し、この
吸収セル及びフアブリペロー干渉計の透過光の強度を第
１の光検出器、第２の光検出器で検出して、これらの検
出器の出力に基づいて制御手段により前記半導体レーザ
ーの出力光の周波数を制御する構成であって、前記第１
の光検出器の出力を低周波数帯域に制限して前記制御手
段に入力すると共に、前記第２の光検出器の出力を高周
波数帯域に制限して前記制御手段に入力するようにした
ものである。Means for Solving the Problems> In order to solve the above problems, the present invention makes the output light of a semiconductor laser enter an absorption cell and a Fabry-Perot interferometer, and calculates the intensity of the transmitted light of the absorption cell and Fabry-Perot interferometer. A first photodetector and a second photodetector detect the semiconductor laser, and a control means controls the frequency of the output light of the semiconductor laser based on the outputs of these detectors,
The output of the second photodetector is limited to a low frequency band and input to the control means, and the output of the second photodetector is limited to a high frequency band and input to the control means. be.
〈実施例〉
第１図に本発明に１系る周波数安定化半導体レーサー装
置の一実施例を示す、第１図において、１は半導体レー
ザーであり、恒温槽２内に配置されている。この恒温′
！Ｒ２は温度制御器３により、その内部の温度が精密に
制御される。４はアイソレータであり、レンズによって
平行化された半導体レーザー１の出力光が入力される。<Embodiment> FIG. 1 shows an embodiment of a frequency-stabilized semiconductor laser device according to the present invention. In FIG. 1, 1 is a semiconductor laser, which is placed in a thermostatic oven 2. This constant temperature'
! The temperature inside R2 is precisely controlled by the temperature controller 3. 4 is an isolator, into which the output light of the semiconductor laser 1 collimated by a lens is inputted.
アイソレータ・１は戻り光を遮断して半導体レーザー１
を安定に動作させるために用いる。５はハーフミラーテ
アリ、アイソレータ４の透過光が入射され、この光を２
つに分１技する。６はハーフミラ−であり、ハーフミラ
−５を透過した光が入射され、この光を２つに分岐する
。ハーフミラ−６を透過した光は出力光として外部に出
力される。７はハーフミラ−であり、ハーフミラ−６で
反射した光が入射され、この光を２つに分岐する。８は
吸収セルであり、ハーフミラ−７を透過した光が入射さ
れる。Isolator 1 blocks the return light and semiconductor laser 1
Used to ensure stable operation. 5 is a half mirror tear, the transmitted light of isolator 4 is incident, and this light is
Do one trick every minute. 6 is a half mirror, into which the light transmitted through the half mirror 5 is incident, and this light is split into two. The light transmitted through the half mirror 6 is output to the outside as output light. 7 is a half mirror, into which the light reflected by the half mirror 6 is incident, and this light is split into two. 8 is an absorption cell, into which the light transmitted through the half mirror 7 is incident.
吸収セル８の内部にはＩ’Ｎ ｂのような特定の周波数
の光を吸収する標準物質が封入されている。吸収セル８
は温度によってその吸収強度が変化しないように恒温Ｉ
！９内に配置され、その温度を一定にする。この恒温槽
９は温度制御器１０４．、：より制御される。１１は第
１の光検出器であり、吸収セル８の透過光が入射され、
その光強度を電気信号に変換する。１２はローパスフィ
ルタであり、第１の光検出器１１の出力が入力される。A standard substance such as I'N b that absorbs light of a specific frequency is sealed inside the absorption cell 8 . Absorption cell 8
is a constant temperature I so that its absorption intensity does not change depending on the temperature.
! 9 to keep its temperature constant. This constant temperature bath 9 has a temperature controller 104. ,: more controlled. 11 is a first photodetector, into which the transmitted light of the absorption cell 8 is incident;
The light intensity is converted into an electrical signal. 12 is a low-pass filter to which the output of the first photodetector 11 is input.
１３は制御手段であり、ローパスフィルタ１２の出力が
入力される。制御手段１３の出方はＡＣ結合により半導
体レーザー１に入力され、その注入電流を制御する。１
４はフアブリペロー干渉計であり、ハーフミラ−５で反
射した光が入射される。１５は第２の光検出器であり、
フアブリペロー干渉計１４の透過光が入射され、その光
強度を電気信号に変換する。１６はバイパスフィルタで
あり第２の光検出器１５の出力が入力される。バイパス
フィルタ１６の出力は制御手段１３に入力される。１７
は光検出器であり、ハーフミラ−７で反射された尤が入
射され、その光強度を電気信号に変換する。13 is a control means to which the output of the low-pass filter 12 is input. The output of the control means 13 is input to the semiconductor laser 1 by AC coupling, and controls the injection current. 1
4 is a Fabry-Perot interferometer, into which the light reflected by the half mirror 5 is incident. 15 is a second photodetector;
Transmitted light from the Fabry-Perot interferometer 14 is incident, and its light intensity is converted into an electrical signal. 16 is a bypass filter to which the output of the second photodetector 15 is input. The output of the bypass filter 16 is input to the control means 13. 17
is a photodetector, into which the light reflected by the half mirror 7 is incident, and the light intensity is converted into an electrical signal.
光検出器１７の出力は制御手段１３に入力されす。The output of the photodetector 17 is input to the control means 13.
制御手段１３はローパスフィルタ１２とバイパスフィル
タ１６の出力を加算した信号から光検出器１７の出力を
減算した信号に基づいて半導体レーザー１を制御する。The control means 13 controls the semiconductor laser 1 based on a signal obtained by subtracting the output of the photodetector 17 from the signal obtained by adding the outputs of the low-pass filter 12 and the bypass filter 16.
次に、この実施例の動作を説明する。半導体レーザー１
の出力光はハーフミラ−５，６，７で４つに分岐され、
それらはフアブリペロー干渉計１４、吸収セル８、光検
出器１７に入射され、また外部に出力される。吸収セル
８は特定の周波数の光のみ吸収し、ファブリへロー干渉
計１４は特定の周波数の光のみ透過させるので、これら
の透過光強度が一定になるように半導体レーザー１の注
入電流等を制御してその出力光の周波数を変化させるこ
とにより、その周波数を−・定に制御する。Next, the operation of this embodiment will be explained. Semiconductor laser 1
The output light is split into four by half mirrors 5, 6, and 7,
They are incident on the Fabry-Perot interferometer 14, the absorption cell 8, and the photodetector 17, and are output to the outside. The absorption cell 8 absorbs only light of a specific frequency, and the Fabry-Herot interferometer 14 transmits only light of a specific frequency, so the injection current of the semiconductor laser 1, etc. is controlled so that the intensity of these transmitted lights is constant. By changing the frequency of the output light, the frequency is controlled to be constant.
この実施例では、吸収セル８の透過光強度を表わす第１
の光検出器１１の出力をローパスフィルタ１２でその高
周波成分をカットし、またファブリベロ−干渉計１４の
透過光強度を表わす第２の光検出器１５の出力をバイパ
スフィルタ１６でその低周波成分をカットしてこれらの
和信号により半導体レーザー１を制御しているので、短
周期の制御はフアブリペロー干渉計１４により行われ、
長周期の制御は吸収セル８によって行われる。その為、
吸収セル８が発生ずるノイズ及びフアブリペロー干渉計
１４の半透鏡の間隔や空気の屈折率が変化する事による
透過特性の変動による彩りを除去することが出来、光ス
ペクトルの狭帯域化と周波数の変動の抑制が同時に行え
る６例えば、フアブリペロー干渉計のみで周波数安定度
を１０−８にするためには、フアブリペロー干渉計１４
のスペーサとしてＺＥＲＯＤＵＲ等の低膨脹係数の材料
を用いたとしても温度変動を±０．２°Ｃ以下にしなけ
ればならず、エアギャップエタロンでは空気の屈折率変
動を押さえるために±０．０１°Ｃ以下に制御しな（う
ればならない、しかしながら、この実施例て゛は長期的
な安定性は吸収セル８によって制御されるので、フアブ
リペロー干渉刷１４は第２図に示す透過光のビーク１８
の肩の部分にあればよいから、肩の部分に相当するΔｆ
程度の変動は許される０通常のファブリペロ−Ｔ渉計で
はこのΔｆ′は４００ Ｍ Ｈ７，程度あるので、１．
１ｘｉｏ’の安定度があればよい。この為には、低ｖ６
服率材料を用いたとすると±２１゛Ｃ程度の温度変動は
許容され、エアギャップエタロンでも±１°Ｃの制御を
行えばよい。In this example, the first
The output of the second photodetector 11 is filtered by a low-pass filter 12 to remove its high frequency components, and the output of the second photodetector 15, which represents the transmitted light intensity of the Fabry-Bero interferometer 14, is filtered by a bypass filter 16 to remove its low frequency components. Since the semiconductor laser 1 is controlled by the sum signal of these signals, short-period control is performed by the Fabry-Perot interferometer 14.
Long-period control is performed by the absorption cell 8. For that reason,
It is possible to eliminate the noise generated by the absorption cell 8 and the coloring caused by variations in transmission characteristics due to changes in the spacing between the semi-transparent mirrors of the Fabry-Perot interferometer 14 and the refractive index of air, narrowing the optical spectrum and changing the frequency. For example, in order to achieve a frequency stability of 10-8 using only a Fabry-Perot interferometer, a Fabry-Perot interferometer 14
Even if a material with a low expansion coefficient such as ZERODUR is used as a spacer, temperature fluctuations must be kept below ±0.2°C, and air gap etalons have a temperature fluctuation of ±0.01° in order to suppress fluctuations in the refractive index of air. However, in this embodiment, the long-term stability is controlled by the absorption cell 8, so that the Fabry-Perot interference print 14 has a peak of transmitted light 18 shown in FIG.
Since it only needs to be at the shoulder part, Δf corresponding to the shoulder part
Some degree of variation is allowed.In a normal Fabry-Perot-T interpolator, this Δf' is about 400 MH7, so 1.
It is sufficient to have a stability of 1xio'. For this, low v6
If a material with a capacitance is used, a temperature fluctuation of about ±21°C is allowed, and even with an air gap etalon, it is sufficient to control the temperature to within ±1°C.
第３図に半導体レーザー１、第１、第２の光検出器１１
．１５、光検出器１７、ロー・・バスフィルタ１２、バ
イパスフィルタ１６、制御手段１３の具体的な構成の一
例を示す、なお、第１図と同じ要素には同一符号を付し
、説明を省略する。第３図において、光検出器１７の出
力は増幅器１９で反転増幅され、第１の光検出器１１の
出力と加算される。ローパスフィルタ１２は増幅器２０
とその帰還側に接続された抵抗及びコンデンサにより構
成されている。また、第２の光検出器１５の出力は増幅
器２１とコンデンサで構成されたバイパスフィルタ１６
に人力される。バイパスフィルタ１６とローパスフィル
タ１２の出力は２つのトランジスタで構成された制御手
段１３に入力され、半導体レーザー１の注入電流を制御
する。半導体レーザー１はローパスフィルタ１２とバイ
パスフィルタ１６の加算出力で駆動される。第４図にさ
らに他の実施例を示す。光検出器１７の出力は増幅器１
９で反転増幅され、第１の光検出器１１の出力と共にロ
ーパスフィルタ１２に人力される。FIG. 3 shows a semiconductor laser 1, a first photodetector 11, and a second photodetector 11.
．． 15. An example of a specific configuration of the photodetector 17, low-pass filter 12, bypass filter 16, and control means 13 is shown. The same elements as in FIG. do. In FIG. 3, the output of the photodetector 17 is inverted and amplified by the amplifier 19 and added to the output of the first photodetector 11. The low pass filter 12 is an amplifier 20
It consists of a resistor and a capacitor connected to the feedback side. In addition, the output of the second photodetector 15 is passed through a bypass filter 16 composed of an amplifier 21 and a capacitor.
is man-powered. The outputs of the bypass filter 16 and the low-pass filter 12 are input to a control means 13 made up of two transistors, which controls the injection current of the semiconductor laser 1. The semiconductor laser 1 is driven by the combined output of the low-pass filter 12 and the bypass filter 16. FIG. 4 shows yet another embodiment. The output of the photodetector 17 is sent to the amplifier 1
The signal is inverted and amplified at 9, and is input to the low-pass filter 12 together with the output of the first photodetector 11.
第２の光検出器１５の出力はコンデンサ２２で低周波成
分がカットされ、増幅器２３でローパスフィルタ１２の
出力と加算されて制御手段１３に入力される。The low frequency component of the output of the second photodetector 15 is cut off by a capacitor 22, added to the output of the low-pass filter 12 by an amplifier 23, and input to the control means 13.
なお、第５図に示すように、吸収セルの透過光特性のピ
ーク２４の単調変化部分子いに半導体レーザー１の出力
光の周波数をロックするようにすると周波数の変化が光
強度の変化に変換されるので、ロックインアンプ等の装
置を使わずに簡単な装置で周波数を安定化することが出
来る。As shown in FIG. 5, when the monotonically changing peak 24 of the transmitted light characteristic of the absorption cell is locked to the frequency of the output light of the semiconductor laser 1, the change in frequency is converted into a change in light intensity. Therefore, the frequency can be stabilized with a simple device without using a device such as a lock-in amplifier.
また、ローパスフィルタ１２、バイパスフィルタ１６、
制御手段１３は一体にして構成してらよい。In addition, a low-pass filter 12, a bypass filter 16,
The control means 13 may be constructed in one piece.
〈発明の効果〉
以り１＝実施例に基づいて具体的に説明したように、こ
の発明では半導体レーザーの出力光を吸収セル及びフア
ブリペロー干渉計に入射し、吸収セルの透過光強度１８
号を１７−バスフィルタを通した信号と２フアプリベロ
ー干渉計の透過光強度信号をバイパスフィルタに通した
信号により、前記半導体レーザーを制御するようにした
。その為、光スペクトルの狭帯域化と周波数の安定化が
同時に出来るという効果がある。<Effects of the Invention> 1 = As specifically explained based on the embodiment, in this invention, the output light of a semiconductor laser is incident on an absorption cell and a Fabry-Perot interferometer, and the transmitted light intensity of the absorption cell is 18
The semiconductor laser was controlled by a signal obtained by passing a signal passed through a bus filter and a signal obtained by passing a transmitted light intensity signal of a two-fold bellows interferometer through a bypass filter. Therefore, there is an effect that the optical spectrum can be narrowed and the frequency can be stabilized at the same time.
また、フアブリペロー干渉計の温度制御を厳密にする必
要がないので、装置の構成が簡単になるという効果もあ
る。Furthermore, since there is no need to strictly control the temperature of the Fabry-Perot interferometer, there is also the effect that the configuration of the device is simplified.
第１図は本発明に係る周波数安定化半導体レーザー装置
の一実施例を示す構成図、第２図はフアブリペロー干渉
計の特性を示す特性曲線図、第３図及び第４図は具体的
な構成を示す図、第５図は吸収セルの特性を示す特性曲
線図、第６図は従来の波長安定化半導体レーザー装置の
構成を示す構成図である。
１・・・半導体レーザー、５〜７・・・ハーフミラ−８
・・・吸収セル、１１・・・第１の光検出器、１２・・
・ローパスフィルタ、１３・・・制御手段、１４・・・
フアブリペロー干渉計、１５・・・第２の光検出器、１
６・・・バイパスフィルタ、１７・・・光検出器。
第３図
’、’、’Ｅ ２ Ｔ！
よる安定化周波数FIG. 1 is a configuration diagram showing an embodiment of a frequency-stabilized semiconductor laser device according to the present invention, FIG. 2 is a characteristic curve diagram showing the characteristics of a Fabry-Perot interferometer, and FIGS. 3 and 4 are specific configuration diagrams. FIG. 5 is a characteristic curve diagram showing the characteristics of an absorption cell, and FIG. 6 is a configuration diagram showing the configuration of a conventional wavelength-stabilized semiconductor laser device. 1... Semiconductor laser, 5-7... Half mirror 8
...Absorption cell, 11...First photodetector, 12...
-Low pass filter, 13...control means, 14...
Fabry-Perot interferometer, 15...second photodetector, 1
6... Bypass filter, 17... Photodetector. Figure 3', ','E 2 T! Stabilized frequency by
Claims (1)
される吸収セルと、この吸収セルの透過光の強度を検出
する第１の光検出器と、前記半導体レーザーの出力光が
入射されるフアブリペロー干渉計と、このフアブリペロ
ー干渉計の透過光の強度を検出する第２の光検出器と、
この第２の光検出器及び前記第１の光検出器の出力が入
力され前記半導体レーザーの出力光の周波数を制御する
制御手段とを有し、前記第１の光検出器の出力を低周波
数帯域に制限して前記制御手段に入力すると共に、前記
第２の光検出器の出力を高周波数帯域に制限して前記制
御手段に入力するようにしたことを特徴とする周波数安
定化半導体レーザー装置。A semiconductor laser, an absorption cell into which the output light of the semiconductor laser is incident, a first photodetector which detects the intensity of the transmitted light of the absorption cell, and a Fabry-Perot interferometer into which the output light of the semiconductor laser is incident. and a second photodetector that detects the intensity of the transmitted light of the Fabry-Perot interferometer.
a control means to which the output of the second photodetector and the first photodetector is input and controls the frequency of the output light of the semiconductor laser; A frequency stabilized semiconductor laser device characterized in that the output of the second photodetector is limited to a high frequency band and input to the control means, and the output of the second photodetector is limited to a high frequency band and input to the control means. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1065492A JP2687557B2 (en) | 1989-03-17 | 1989-03-17 | Frequency stabilized semiconductor laser device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1065492A JP2687557B2 (en) | 1989-03-17 | 1989-03-17 | Frequency stabilized semiconductor laser device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02244782A true JPH02244782A (en) | 1990-09-28 |
| JP2687557B2 JP2687557B2 (en) | 1997-12-08 |
Family
ID=13288647
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1065492A Expired - Fee Related JP2687557B2 (en) | 1989-03-17 | 1989-03-17 | Frequency stabilized semiconductor laser device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2687557B2 (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0818857A1 (en) * | 1996-07-11 | 1998-01-14 | Nec Corporation | Semiconductor laser unit having a function of stabilizing an optical output and a wavelength |
| FR2828595A1 (en) * | 2001-06-14 | 2003-02-14 | Ando Electric | TUNABLE TEMPERATURE CONTROLLED LASER SOURCE DEVICE |
| WO2002031933A3 (en) * | 2000-10-10 | 2003-08-14 | Fiberspace Inc | Method and system for locking transmission wavelengths for lasers in a dense wavelength division multiplexer utilizing a tunable etalon |
| EP1436864A2 (en) * | 2001-09-28 | 2004-07-14 | Spectra Sensors, Inc. | Method and system for locking transmission wavelengths for lasers in a dense wavelength multiplexer utilizing a tunable etalon |
| US7027470B2 (en) | 2000-10-10 | 2006-04-11 | Spectrasensors, Inc. | Laser wavelength locker |
| CN100391139C (en) * | 2002-05-30 | 2008-05-28 | 中国科学技术大学 | Parallel multichunnel wavelength locking device |
-
1989
- 1989-03-17 JP JP1065492A patent/JP2687557B2/en not_active Expired - Fee Related
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0818857A1 (en) * | 1996-07-11 | 1998-01-14 | Nec Corporation | Semiconductor laser unit having a function of stabilizing an optical output and a wavelength |
| US5867513A (en) * | 1996-07-11 | 1999-02-02 | Nec Corporation | Semiconductor laser unit having a function of stabilizing an optical output and a wavelength |
| WO2002031933A3 (en) * | 2000-10-10 | 2003-08-14 | Fiberspace Inc | Method and system for locking transmission wavelengths for lasers in a dense wavelength division multiplexer utilizing a tunable etalon |
| US7027470B2 (en) | 2000-10-10 | 2006-04-11 | Spectrasensors, Inc. | Laser wavelength locker |
| US7460567B2 (en) | 2000-10-10 | 2008-12-02 | Spectrasensors, Inc. | Laser wavelength locker |
| FR2828595A1 (en) * | 2001-06-14 | 2003-02-14 | Ando Electric | TUNABLE TEMPERATURE CONTROLLED LASER SOURCE DEVICE |
| EP1436864A2 (en) * | 2001-09-28 | 2004-07-14 | Spectra Sensors, Inc. | Method and system for locking transmission wavelengths for lasers in a dense wavelength multiplexer utilizing a tunable etalon |
| EP1436864A4 (en) * | 2001-09-28 | 2006-03-15 | Spectra Sensors Inc | Method and system for locking transmission wavelengths for lasers in a dense wavelength multiplexer utilizing a tunable etalon |
| CN100391139C (en) * | 2002-05-30 | 2008-05-28 | 中国科学技术大学 | Parallel multichunnel wavelength locking device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2687557B2 (en) | 1997-12-08 |
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