JPH02243599A - Vapor phase synthesis method for oriented diamond thin film - Google Patents
Vapor phase synthesis method for oriented diamond thin filmInfo
- Publication number
- JPH02243599A JPH02243599A JP6565389A JP6565389A JPH02243599A JP H02243599 A JPH02243599 A JP H02243599A JP 6565389 A JP6565389 A JP 6565389A JP 6565389 A JP6565389 A JP 6565389A JP H02243599 A JPH02243599 A JP H02243599A
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- diamond
- vapor phase
- diamond thin
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 58
- 239000010432 diamond Substances 0.000 title claims abstract description 58
- 239000010409 thin film Substances 0.000 title claims abstract description 31
- 239000012808 vapor phase Substances 0.000 title claims abstract description 21
- 238000001308 synthesis method Methods 0.000 title claims description 6
- 238000003786 synthesis reaction Methods 0.000 claims abstract description 28
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 26
- 238000000034 method Methods 0.000 claims abstract description 22
- 239000007789 gas Substances 0.000 claims abstract description 21
- 229930195733 hydrocarbon Natural products 0.000 claims abstract description 14
- 150000002430 hydrocarbons Chemical class 0.000 claims abstract description 13
- 239000004215 Carbon black (E152) Substances 0.000 claims abstract description 12
- 239000002994 raw material Substances 0.000 claims abstract description 9
- 238000006243 chemical reaction Methods 0.000 claims abstract description 6
- 239000001257 hydrogen Substances 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 2
- 239000000758 substrate Substances 0.000 abstract description 35
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 4
- 239000000203 mixture Substances 0.000 abstract description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052799 carbon Inorganic materials 0.000 abstract 1
- 239000013078 crystal Substances 0.000 description 14
- 239000010408 film Substances 0.000 description 10
- 239000012495 reaction gas Substances 0.000 description 8
- 238000002441 X-ray diffraction Methods 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 238000000576 coating method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 238000002083 X-ray spectrum Methods 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 239000013626 chemical specie Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000006356 dehydrogenation reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- -1 hydrocarbon ions Chemical class 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、切削工具コーティング、ＩＣ（集積回路）基
板のヒートシンク（冷却用放熱器）、電子デバイス等の
用途に好適な配向性の強いダイヤモンド薄膜を気相合成
法によって得るための方法に関する。DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention provides highly oriented diamond that is suitable for applications such as cutting tool coatings, heat sinks (cooling radiators) for IC (integrated circuit) substrates, and electronic devices. This invention relates to a method for obtaining a thin film by vapor phase synthesis.
（従来の技術）
ダイヤモンドは、硬度、耐熱性、耐薬品性や耐放射線性
などの点で他の物質より優れた緒特性を持っており、ダ
イヤモンドの薄膜は前記用途の開発、高度化の重要手段
である。このようなダイヤモンドの薄膜は、プラズマ反
応を利用した熱フィラメント法、高周波プラズマＣＶＤ
法、マイクロ波プラズマＣＶＤ法、直流プラズマＣＶＤ
法等によって形成される。これらの合成法は、通常、濃
度を調整した炭化水素ガスと水素との混合ガスを原料ガ
スとして合成反応室に供給し、室内でそれぞれのエネル
ギーによりプラズマ化し、このプラズマ中に成膜基板を
置いて、基板上にダイヤモンドを気相合成して薄膜状に
形成させるものである。(Conventional technology) Diamond has properties superior to other materials in terms of hardness, heat resistance, chemical resistance, radiation resistance, etc., and diamond thin films are important for the development and advancement of the above-mentioned applications. It is a means. Such diamond thin films can be produced using hot filament method using plasma reaction, high frequency plasma CVD
method, microwave plasma CVD method, direct current plasma CVD
Formed by law, etc. In these synthesis methods, a mixed gas of hydrocarbon gas and hydrogen whose concentration has been adjusted is usually supplied to a synthesis reaction chamber as a raw material gas, turned into plasma by the respective energies in the chamber, and a film-forming substrate is placed in this plasma. In this method, diamond is formed into a thin film on a substrate by vapor phase synthesis.
しかし、Ｓｉ基板上にダイヤモンド薄膜を気相合成する
場合を例とすると、鏡面仕上げされたままのＳｔ基板を
用いたのではダイヤモンドの粒子が低密度で成長するだ
けとなるので、合成前に予め基板面をダイヤモンドペー
ストによす研磨して置く二七が必要になる。このように
すれば、基板面に研磨により生じた傷が、合成反応の初
期に発生するダイヤモンド結晶核の発生中心となること
により、基板上にはダイヤモンド粒子が高密度に発生し
、多結晶のダイヤモンド薄膜が速やかに形成される。However, in the case of vapor phase synthesis of a diamond thin film on a Si substrate, if a mirror-finished St substrate is used, diamond particles will only grow at a low density. It is necessary to polish the substrate surface with diamond paste. In this way, the scratches created on the substrate surface by polishing become centers of diamond crystal nuclei generated at the beginning of the synthesis reaction, and diamond particles are generated at high density on the substrate, resulting in polycrystalline formation. A diamond film forms quickly.
ところでこのようにして基板上に形成されたダイヤモン
ドの多結晶薄膜においては、特定の結晶面が基板面と平
行に向く傾向があり、これは基板に対するダイヤモンド
の配向性と呼ぶ。By the way, in a polycrystalline thin film of diamond formed on a substrate in this manner, a specific crystal plane tends to be oriented parallel to the substrate surface, and this is called the orientation of diamond with respect to the substrate.
このような配向性を示す場合、特定の結晶面におけるＸ
線回折強度は粉末試料のランダムな結晶の場合による回
折強度より大きくなる。プラズマを用いるダイヤモンド
の気相合成では、基板に対する配向性は炭化水素濃度に
依存しており、例えば炭化水素としてＣＨ，を用いた場
合、ＣＨ４濃度が１％を越えるとＸ線スペクトルの（２
２０）結晶面回折線強度が増加する。このことからダイ
ヤモンドの（１１０）結晶面が基板面に平行になる度合
が強くなっていることが知られる。When exhibiting such orientation, X in a specific crystal plane
The line diffraction intensity will be greater than that due to the random crystalline case of the powder sample. In the vapor phase synthesis of diamond using plasma, the orientation with respect to the substrate depends on the hydrocarbon concentration. For example, when using CH as the hydrocarbon, if the CH4 concentration exceeds 1%, the X-ray spectrum (2
20) Crystal plane diffraction line intensity increases. From this, it is known that the degree to which the (110) crystal plane of diamond is parallel to the substrate surface is increasing.
そこでダイヤモンドの（２２０）結晶面を基板面に対し
て平行に強く配向させるため、先ずＣＨ４が高濃度の条
件で、第２図に示すように、基板（ａ）上に密着性の良
い微結晶ダイヤモンド薄膜の第１層（ｂ）を形成し、次
いでＣＨ，が低濃度の条件に切替えて結晶性の良いダイ
ヤモンド薄膜の第二層（Ｃ）を形成する技術を先に提案
した。Therefore, in order to strongly orient the (220) crystal plane of diamond parallel to the substrate surface, first, under conditions of high CH4 concentration, as shown in Figure 2, microcrystals with good adhesion are placed on the substrate (a). We have previously proposed a technique in which a first layer (b) of a diamond thin film is formed, and then the conditions are changed to a low CH concentration to form a second layer (C) of a diamond thin film with good crystallinity.
（発明が解決しようとする問題点）
前記従来技術では、ダイヤモンドの（１１０）結晶面配
向膜を得るため原料反応ガスの混合比ＣＨ４／ＨＸ等の
気相合成条件を変化させてダイヤモンドの多層膜を形成
させなければならず、製造手順が複雑になる。またダイ
ヤモンドの成長速度は約０．１ μｍ／ｈｒと遅く、コ
ーティングに充分なダイヤモンド膜の厚さを得るのに多
くの時間と投入エネルギーを必要とする。しかもＸ線回
折による（２２０）結晶面と（１１１）結晶面のピーク
強度比Ｉ （２２０）／ Ｉ （１１１）も３程度であ
り、完全に（１１０）結晶面が基板に平行に配向してい
なかった。(Problems to be Solved by the Invention) In the prior art described above, in order to obtain a (110) crystal plane oriented film of diamond, the vapor phase synthesis conditions such as the mixture ratio of raw material reaction gases CH4/HX are changed to produce a diamond multilayer film. must be formed, which complicates the manufacturing procedure. Furthermore, the growth rate of diamond is slow at about 0.1 μm/hr, and it requires a lot of time and input energy to obtain a diamond film with a sufficient thickness for coating. Furthermore, the peak intensity ratio I (220)/I (111) between the (220) crystal plane and the (111) crystal plane determined by X-ray diffraction is approximately 3, indicating that the (110) crystal plane is completely oriented parallel to the substrate. There wasn't.
また従来、熱フィラメント法によるダイヤモンド薄膜の
気相合成法が多数報告されているが、何れも無配向ダイ
ヤモンドの合成法であった。In addition, many vapor phase synthesis methods for diamond thin films using hot filament methods have been reported, but all of them were methods for synthesizing non-oriented diamond.
本発明は、上述の従来技術の問題点を解決するため、合
成条件が一定で、成膜速度が速く、配向性の強いダイヤ
モンド薄膜を得るための製造方法を提供することを目的
とする。SUMMARY OF THE INVENTION In order to solve the problems of the prior art described above, it is an object of the present invention to provide a manufacturing method for obtaining a diamond thin film with constant synthesis conditions, a fast film formation rate, and a strong orientation.
（問題点を解決するための手段）
前記問題点の解決手段としての本発明方法は、構成上、
合成手段として直流バイアスを印加した熱フィラメント
法を用いるとともに、原料として１０／１００≧［炭化
水素のＣ］／ＨＥ≧２／１００となる炭化水素ガスと水
素との混合ガスを供給するようにし、反応室ガス圧を１
０〜４０ Ｔｏｒｒとして配向性ダイヤモンドを気相合
成することを特徴とする。(Means for solving the problems) The method of the present invention as a means for solving the problems described above has the following configurations:
A hot filament method with a DC bias applied is used as a synthesis means, and a mixed gas of hydrocarbon gas and hydrogen with a ratio of 10/100≧[hydrocarbon C]/HE≧2/100 is supplied as a raw material. Reaction chamber gas pressure to 1
It is characterized by vapor phase synthesis of oriented diamond at 0 to 40 Torr.
本発明の配向性ダイヤモンド薄膜の気相合成法を第１図
を参照し、−層具体的に説明すると次のとおりである。The vapor phase synthesis method of the oriented diamond thin film of the present invention will be specifically explained below with reference to FIG.
本発明においては、第１図に例示するような熱フィラメ
ント法の装置を使用する。合成反応室（１）内の冷却管
（２）より水冷される基板ホルダー（３）上に後述材料
の基板（４）を置き、基板と約１ｃｍ離してタングステ
ンフィラメント（５）を設置する。In the present invention, a hot filament method apparatus as illustrated in FIG. 1 is used. A substrate (4) made of the material described later is placed on a substrate holder (3) that is water-cooled by a cooling pipe (2) in the synthesis reaction chamber (1), and a tungsten filament (5) is placed about 1 cm apart from the substrate.
フィラメント（５）はフィラメント電源（６）より通電
して１６００°Ｃ〜２２００’Ｃの温度とし、基板（４
）は表面温度をダイヤモンド合成に必要な６００°Ｃ〜
１２００°Ｃの温度に保つ。（７）は併用する基板ヒー
タである。合成反応室（１）には接続した原料導入管（
８）から濃度を制御した反応ガスを導入し、真空ポンプ
（９）で排気し、反応ガス圧力は１０〜４０ Ｔｏｒｒ
に保ち、反応ガスの炭化水素と水素の濃度を１０７１０
０≧［炭化水素のＣ］／Ｈ２≧２／１００とする。The filament (5) is energized from the filament power supply (6) to a temperature of 1600°C to 2200'C, and the substrate (4
) has a surface temperature of 600°C, which is necessary for diamond synthesis.
Maintain temperature at 1200°C. (7) is a substrate heater used together. The synthesis reaction chamber (1) is connected to the raw material introduction pipe (
A reaction gas with a controlled concentration is introduced from 8) and evacuated using a vacuum pump (9), with a reaction gas pressure of 10 to 40 Torr.
and the concentration of hydrocarbons and hydrogen in the reaction gas to 10710
0≧[C of hydrocarbon]/H2≧2/100.
バイアス電源００）により基板（４）とフィラメント（
５）との間に５０〜２００ｖのバイアス電圧をかける。Bias power supply 00) connects the substrate (4) and filament (
5) Apply a bias voltage of 50 to 200v between the
反応ガスとしては、ＣＯ，の他ＣＩｈＯＨ、（ＣＨｚ）
ＩＣｏ、Ｃ２Ｈ２等の炭化水素やアルコールを用いる
ことができる。基板（４）の材料は、良質で、安価に入
手でき、ダイヤモンド薄膜の合成が容易で応用分野の目
的に適合するものとしてＳｉの他、５ｉｓＮａＡｊ！ｚ
Ｏｉ、札、Ｋ、超硬合金、Ｔａ、 Ｍｏ、ダイヤモンド
等が用いられる。Reactive gases include CO, CIhOH, (CHz)
Hydrocarbons and alcohols such as ICo and C2H2 can be used. The material for the substrate (4) is 5isNaAj! in addition to Si, which is of good quality, can be obtained at low cost, is easy to synthesize a diamond thin film, and is suitable for the purpose of the application field. z
Oi, tag, K, cemented carbide, Ta, Mo, diamond, etc. are used.
このような条件で本発明方法を実施すると、フィラメン
トに接触した反応ガス分子が分解されて炭化水素イオン
やラジカル、さらに水素原子の活性な化学種が形成され
、これらが対流、拡散により基板に到達し脱水素反応を
経て、ダイヤモンド薄膜が自然に形成されるが、その成
膜速度はマイクロ波法の１０倍以上速く、配向性の強い
ダイヤモンド薄膜となる。When the method of the present invention is carried out under these conditions, the reactive gas molecules in contact with the filament are decomposed to form hydrocarbon ions, radicals, and active chemical species of hydrogen atoms, which reach the substrate by convection and diffusion. Through the dehydrogenation reaction, a diamond thin film is naturally formed, and the film formation rate is more than 10 times faster than the microwave method, resulting in a diamond thin film with strong orientation.
反応ガス濃度はｃ／Ｈ，＜ ２ ／１００ではダイヤモ
ンド薄膜の（１１０）配向は現れず、Ｃ／Ｈ２≧２／１
００で配向膜が得られる。しかしＣ／Ｈｔ＞１０７１０
０では結晶化が起こらない。フィラメント温度は、例え
ば炭化水素ガスがＣＨ，の場合、１２００°Ｃ以下では
、その分解速度が大変に遅いため、ダイヤモンドの核発
生頻度、成長速度を上昇させるには１６００°Ｃ以上に
するが、あまり高温では気相合成操作にトラブルが生じ
易くなるので２２００°Ｃ以下とする。基板の温度は１
２００″Ｃ以上の高温ではグラファイトの生成が主とな
り、６００″Ｃ以下の低温ではダイヤモンド合成が行わ
れないので、６００ ’Ｃ〜１２００’Ｃとする。反応
ガス圧力は１０〜４０ Ｔｏｒｒ範囲で配向したダイヤ
モンド薄膜の気相合成が可能である。１０ Ｔｏｒｒ未
満では、高速で薄膜化する１ことができない。また、４
０ Ｔｏｒｅを越えたときには配向性が悪くなる。バイ
アス電圧をフィラメントと基板との間に印加するとバイ
アス電流が流れるが、このバイアス電流はあるバイアス
電圧以上ではなだれ放電により安定して流れなくなる。When the reaction gas concentration is c/H, < 2/100, the (110) orientation of the diamond thin film does not appear, and C/H2≧2/1.
00, an alignment film is obtained. But C/Ht>10710
At 0, no crystallization occurs. For example, when the hydrocarbon gas is CH, the decomposition rate is very slow below 1200°C, so in order to increase the frequency of diamond nucleation and growth rate, the filament temperature should be set above 1600°C. If the temperature is too high, problems tend to occur in the vapor phase synthesis operation, so the temperature is set at 2200°C or less. The temperature of the substrate is 1
At a high temperature of 200''C or higher, graphite is mainly produced, and at a low temperature of 600''C or lower, diamond synthesis does not occur, so the temperature is set at 600'C to 1200'C. Vapor phase synthesis of an oriented diamond thin film is possible at a reaction gas pressure in the range of 10 to 40 Torr. At less than 10 Torr, it is impossible to thin the film at high speed. Also, 4
When it exceeds 0 Tore, the orientation deteriorates. When a bias voltage is applied between the filament and the substrate, a bias current flows, but above a certain bias voltage, this bias current no longer flows stably due to avalanche discharge.
バイアス電流が安定して流れるバイアス電圧領域は、フ
ィラメント、基板間距離、フィラメント温度、反応ガス
圧等の条件によって変化する。そこで装置の実施可能な
範囲によって限定する。The bias voltage range in which the bias current stably flows varies depending on conditions such as the distance between the filament and the substrate, the filament temperature, and the reaction gas pressure. Therefore, it is limited depending on the range that can be implemented by the device.
（作 用）
本発明方法によると、前項記載の作用に基づいて、従来
技術によるよりも（１１０）結晶面の配向の強いダイヤ
モンド薄膜が１０倍以上の速い成膜速度で合成される。(Function) According to the method of the present invention, based on the effects described in the previous section, a diamond thin film with a strongly oriented (110) crystal plane can be synthesized at a deposition rate that is 10 times or more faster than in the prior art.
（実施例）
（Ｉ）実施例■
第１図の熱フィラメント法の装置を用いて、本発明方法
によりダイヤモンド薄膜の気相合成を行った。基板とし
ては、１７４μ−のダイヤモンドペーストで１時間研磨
した寸法２ｃｍＸ１ｃｍのＳｉウェハーを用いた。反応
ガスとしてはＨ２で希釈したＣＨ４を用いた。合成手順
は次のとおりとした。(Examples) (I) Example ■ A diamond thin film was synthesized in a vapor phase according to the method of the present invention using the hot filament method apparatus shown in FIG. The substrate used was a Si wafer with dimensions of 2 cm x 1 cm that had been polished for 1 hour with a 174 .mu.-diamond paste. CH4 diluted with H2 was used as the reaction gas. The synthesis procedure was as follows.
先ずＣＨ４−）１．混合ガスのＣＨ，濃度を３．０％に
調整し、毎分１００ｃｃの流量で合成反応室内に導入し
た。そして反応ガスを３０ Ｔｏｒｒに調節して、タン
グステンフィラメントを通電加熱し、フィラメントと基
板との間に９０Ｖのバイアス電圧を印加した。その時、
基板温度は７５０°Ｃに設定し、ダイヤモンド薄膜の気
相合成を１４時間行った。First, CH4-)1. The CH concentration of the mixed gas was adjusted to 3.0% and introduced into the synthesis reaction chamber at a flow rate of 100 cc/min. Then, the reaction gas was adjusted to 30 Torr, the tungsten filament was electrically heated, and a bias voltage of 90 V was applied between the filament and the substrate. At that time,
The substrate temperature was set at 750°C, and the diamond thin film was vapor phase synthesized for 14 hours.
その結果、基板上には約３５μｍの厚さでダイヤモンド
薄膜が形成された。このダイヤモンド薄膜についてＸ線
回折を行ったところ、（２２０）結晶面と（１１１）結
晶面とのピーク強度比Ｉ （２２０）／ Ｉ （１１１
）が３０となり、極めて強い配向性のダイヤモンド薄膜
となっていることがわかる。As a result, a diamond thin film with a thickness of about 35 μm was formed on the substrate. When X-ray diffraction was performed on this diamond thin film, the peak intensity ratio between the (220) and (111) crystal planes was I (220)/I (111).
) is 30, indicating that the diamond thin film has extremely strong orientation.
（ＩＩ）実施例■
原料ガスとしてＣＨ４−Ｈ，混合ガスのＣＨ４濃度を５
．０％とし、他の条件は実施例■と同じにしてダイヤモ
ンドの気相合成を４時間行った。(II) Example ■ CH4-H as raw material gas, CH4 concentration of mixed gas 5
．． 0%, and other conditions were the same as in Example (2), and diamond vapor phase synthesis was carried out for 4 hours.
この場合、短時間の気相合成によりＸ線回折のピーク強
度比Ｉ （２２０）／ Ｉ （１１１）が１０となる高
い配向性を有するダイヤモンド薄膜が得られた。In this case, a highly oriented diamond film with an X-ray diffraction peak intensity ratio I (220)/I (111) of 10 was obtained by short-time vapor phase synthesis.
（Ｉｆ）実施例■
原料ガスとしてＣＨ，−Ｈ，混合ガスのＣＨ，濃度を実
施例Ｉと同じ３．０％として４時間のダイヤモンド気相
合成を行った。他の条件は実施例１と同じである。(If) Example 2 Diamond vapor phase synthesis was carried out for 4 hours using CH and -H as raw material gases, CH as a mixed gas, and the concentration of 3.0% as in Example I. Other conditions are the same as in Example 1.
この場合、Ｘ線回折のピーク強度比Ｉ （２２０）／Ｉ
（１１１）が４となり、短時間でも尚配向性の良いダ
イヤモンド薄膜が得られている。In this case, the X-ray diffraction peak intensity ratio I (220)/I
(111) was 4, and a diamond thin film with good orientation was obtained even in a short time.
（ＩＶ）実施例■
ダイヤモンド（１１０）結晶面を基板として本発明方法
を実施した。この場合、ダイヤモンド基板上に（１１０
）結晶面を持つダイヤモンド膜を速い合成速度で強く配
合させることができた。これはエビタアキシャル成長が
行われたことによる。(IV) Example ■ The method of the present invention was carried out using a diamond (110) crystal face as a substrate. In this case, (110
) It was possible to form a diamond film with crystal planes in a strong composition at a fast synthesis rate. This is due to Evitaaxial growth.
（発明の効果）
本発明方法によると、ダイヤモンドの気相合成により配
向性の強いダイヤモンド薄膜を基板上に速い成長速度で
形成することができる。単独またはドーピングによる半
導体化と組合せれば一層デバイス化を進め得る可能性が
それにより生ずる。(Effects of the Invention) According to the method of the present invention, a highly oriented diamond thin film can be formed on a substrate at a high growth rate by diamond vapor phase synthesis. If used alone or in combination with semiconductor formation by doping, the possibility arises that further device fabrication can be achieved.
第１図は本発明方法の実施に使用する熱フィラメント法
の装置の１例の略示断面図、第２図は従来技術のダイヤ
モンド薄膜構成例の拡大縦断模式図である。
（１）・・・合成反応室、（２）・・・冷却管、（３）
・・・基板ホルタ−１（４）・・・基板、（５）・・・
フィラメント、（６）・・・フィラメント電源、（７）
・・・基板ヒータ、（８）・・・原料導入管、（９）・
・・真空ポンプ、００）・・・バイアス電源、（ａ）・
・・基板、ら）・・・第１層、（Ｃ）・・・第２層。FIG. 1 is a schematic sectional view of an example of an apparatus for the hot filament method used to carry out the method of the present invention, and FIG. 2 is an enlarged longitudinal sectional view of an example of a prior art diamond thin film configuration. (1)...Synthesis reaction chamber, (2)...Cooling pipe, (3)
... Board halter 1 (4) ... Board, (5) ...
Filament, (6)...Filament power supply, (7)
... Substrate heater, (8) ... Raw material introduction pipe, (9).
・・Vacuum pump, 00)・・Bias power supply, (a)・
...Substrate, et al.)...First layer, (C)...Second layer.
Claims (1)
段として直流バイアスを印加した熱フィラメント法を用
いるとともに、原料として１０／１００≧［炭化水素の
Ｃ］／Ｈ＿２≧２／１００となる炭化水素ガスと水素と
の混合ガスを供給するようにし、反応室ガス圧を１０〜
４０Ｔｏｒｒとしたことを特徴とする配向性ダイヤモン
ド薄膜の気相合成法。In the vapor phase synthesis method of an oriented diamond thin film, a hot filament method with a DC bias applied is used as a synthesis means, and a hydrocarbon gas with a relationship of 10/100≧[C of hydrocarbon]/H_2≧2/100 is used as a raw material. Supply a mixed gas with hydrogen, and keep the reaction chamber gas pressure at 10~
A vapor phase synthesis method for an oriented diamond thin film, characterized in that the pressure is 40 Torr.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6565389A JPH02243599A (en) | 1989-03-16 | 1989-03-16 | Vapor phase synthesis method for oriented diamond thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6565389A JPH02243599A (en) | 1989-03-16 | 1989-03-16 | Vapor phase synthesis method for oriented diamond thin film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02243599A true JPH02243599A (en) | 1990-09-27 |
Family
ID=13293183
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6565389A Pending JPH02243599A (en) | 1989-03-16 | 1989-03-16 | Vapor phase synthesis method for oriented diamond thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02243599A (en) |
-
1989
- 1989-03-16 JP JP6565389A patent/JPH02243599A/en active Pending
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