JPH02243598A - Method for synthesizing diamond film - Google Patents
Method for synthesizing diamond filmInfo
- Publication number
- JPH02243598A JPH02243598A JP6203089A JP6203089A JPH02243598A JP H02243598 A JPH02243598 A JP H02243598A JP 6203089 A JP6203089 A JP 6203089A JP 6203089 A JP6203089 A JP 6203089A JP H02243598 A JPH02243598 A JP H02243598A
- Authority
- JP
- Japan
- Prior art keywords
- diamond film
- substrate
- melting point
- synthesizing
- silicon alloy
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010432 diamond Substances 0.000 title claims abstract description 29
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 28
- 230000002194 synthesizing effect Effects 0.000 title claims abstract description 8
- 238000000034 method Methods 0.000 title claims description 14
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 238000002844 melting Methods 0.000 claims abstract description 9
- 239000000956 alloy Substances 0.000 claims abstract description 8
- 230000008018 melting Effects 0.000 claims abstract description 8
- 229910000676 Si alloy Inorganic materials 0.000 claims abstract description 7
- 239000000463 material Substances 0.000 abstract description 10
- 229910045601 alloy Inorganic materials 0.000 abstract description 4
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 3
- 229910008814 WSi2 Inorganic materials 0.000 abstract description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 abstract description 2
- 229910021332 silicide Inorganic materials 0.000 abstract description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 abstract description 2
- 229910020968 MoSi2 Inorganic materials 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000010891 electric arc Methods 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 239000000498 cooling water Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910016006 MoSi Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【発明の詳細な説明】
〔概 要〕
ダイヤモンド膜の合成方法に関し、ダイヤモンド膜が基
板材料から剥離するのを防止することを目的とし、基板
材料として高融点シリコン合金材料を用いてプラズマＣ
ＶＤ法によりダイヤモンド膜を該基板上に形成するよう
に構成する。[Detailed Description of the Invention] [Summary] Regarding a method for synthesizing a diamond film, the purpose is to prevent the diamond film from peeling off from the substrate material, and a high melting point silicon alloy material is used as the substrate material, and plasma C
A diamond film is formed on the substrate by a VD method.
本発明は、ダイヤモンド膜の合成方法に関し、更に詳し
くは基板とダイヤモンド膜との密着強度を増加して基板
からダイヤモンド膜の剥離を防止しうるようにしたダイ
ヤモンド膜の合成方法に関〔従来技術および発明が解決
しようとする課題〕従来、ダイヤモンドはその高硬度を
利用し高性能工具へ適用されており、又銅の数倍にも及
び高い熱伝導度をもつことから、レーザダイオードなど
発熱量の大きい素子のヒートシンクとして利用されてい
る。The present invention relates to a method for synthesizing a diamond film, and more particularly to a method for synthesizing a diamond film that increases the adhesion strength between a substrate and a diamond film to prevent the diamond film from peeling off from the substrate. [Problem to be solved by the invention] Conventionally, diamond has been applied to high-performance tools by taking advantage of its high hardness, and because it has a high thermal conductivity several times that of copper, it is used in laser diodes and other devices that generate less heat. It is used as a heat sink for large devices.
ところで、工具やヒートシンクとして使用される板状の
ダイヤモンドはこれまで天然かあるいは高温高圧で人工
的に合成したものが使用されてきた。しかし近年ＣＶＤ
法により大面積で複雑形状のダイヤモンド膜が合成出来
るようになってきた。By the way, plate-shaped diamonds used as tools and heat sinks have so far been either natural or synthetically synthesized at high temperature and pressure. However, in recent years CVD
This method has made it possible to synthesize diamond films with large areas and complex shapes.
しかし、従来ＣＶＤ法による厚膜のダイヤモンドの合成
に使用する基板としては８１などダイヤモンド膜との密
着力の大きい材料か又はＷ、Ｍｏなど高融点の材料が主
に使用されてきた。ところで、ダイヤモンド膜合成時の
基板温度は１０００℃以上にもなるこのため、Ｓｉを基
板とした場合融解したり、あるいは割れてしまう、ある
いは又、Ｍｏ 。However, conventionally, materials such as 81 which have a strong adhesion to the diamond film, or materials with high melting points such as W and Mo have been mainly used as substrates for synthesizing thick film diamond by the CVD method. By the way, the substrate temperature during diamond film synthesis is over 1000°C, so if Si is used as a substrate, it may melt or crack, or Mo.
Ｗを用いた場合密着力が弱いため厚い膜になる前にダイ
ヤモンド膜が基板から剥離してしまうなどの問題があっ
た。When W is used, there are problems such as the diamond film peeling off from the substrate before it becomes a thick film due to its weak adhesion.
〔課題を解決するための手段、および発明の作用〕本発
明は、かかる問題を解決するためになれたものであり、
高融点のシリコン合金材料の基板上にプラズマＣＶＤ法
を用いてダイヤモンド膜を形成することを特徴とする。[Means for Solving the Problems and Effects of the Invention] The present invention has been made to solve these problems,
The method is characterized in that a diamond film is formed on a substrate made of a silicon alloy material with a high melting point using a plasma CVD method.
すなわち、本発明においては従来材料の基板の代りに新
しい基板材料としてダイヤモンド膜と密着力の大きいＳ
ｌと高温で安定なＭｏ、Ｗの合金、たとえばシリサイド
（ＭｏＳｉ、 、 ＷＳｉ□等）と呼ばれているものを
用いることで前記の両者の欠点を補うものである。That is, in the present invention, instead of the conventional substrate material, S is used as a new substrate material, which has strong adhesion to the diamond film.
By using an alloy of Mo and W that is stable at high temperatures, such as what is called silicide (MoSi, WSi□, etc.), the above-mentioned drawbacks of both can be compensated for.
本発明の基板材料に関し、「高融点」とは少なくとも１
２００℃以上の融点をいう。Regarding the substrate material of the present invention, "high melting point" means at least 1
A melting point of 200°C or higher.
以下、更に本発明を実施例により説明する。The present invention will be further explained below with reference to Examples.
第１図は、本発明方法を実施するための基本原理図であ
る。第１図中、１は反応室、２は原料ガス、３は電極、
４は直流電源、５はアーク放電、６は基板、７は排気時
の流れ、１０は冷却水の流れを示す。FIG. 1 is a diagram of the basic principle for carrying out the method of the present invention. In Figure 1, 1 is a reaction chamber, 2 is a raw material gas, 3 is an electrode,
Reference numeral 4 indicates a DC power supply, 5 indicates an arc discharge, 6 indicates a substrate, 7 indicates a flow during exhaust, and 10 indicates a flow of cooling water.
本実施例においては、特に基板として直径１５ｍｍ厚さ
０．５ ｍｍの円板状ＭＯ３ｉ、の焼結合金を用いた。In this example, in particular, a sintered alloy in the form of a disc of MO3i with a diameter of 15 mm and a thickness of 0.5 mm was used as the substrate.
このような装置において、水素ガス、メタンガス等の原
料ガス２が反応室１の上部より導入され、ＤＣアーク放
電５によってプラズマ化され、それがプラズマジェット
８となり基板上に吹きつけられダイヤモンド膜９を合成
した。本実施にあたって、水素ガスは１０〜５０４２／
ｍｉｎとした。またアーク電流は１０〜７０Ａ、アーク
電圧は５０〜１５０Ｖであった。反応室の真空度は１に
〜１０ｋＰａであった。In such an apparatus, a raw material gas 2 such as hydrogen gas or methane gas is introduced from the upper part of a reaction chamber 1 and turned into plasma by a DC arc discharge 5, which becomes a plasma jet 8 and is blown onto a substrate to form a diamond film 9. Synthesized. In this implementation, hydrogen gas is 10~5042/
It was set to min. Further, the arc current was 10 to 70A, and the arc voltage was 50 to 150V. The degree of vacuum in the reaction chamber was 1-10 kPa.
メタンガスは０．０５〜１β／ｍ ｉ ｎとした。これ
らを基板として５ｈ成膜したところ厚さ０．５ ｍｍの
ダイヤモンド膜が途中剥離することなく合成が出来た。Methane gas was set at 0.05 to 1β/min. When a film was formed using these as a substrate for 5 hours, a diamond film with a thickness of 0.5 mm could be synthesized without peeling off during the process.
同様に基板材料として同じ寸法の円板状ＷＳｉ２の焼結
合金を用い同様の操作を行い厚さ０．５ ｍｍのダイヤ
モンド膜を途中剥離することなく合成した。Similarly, a sintered alloy of disk-shaped WSi2 of the same size was used as the substrate material, and the same operation was performed to synthesize a diamond film with a thickness of 0.5 mm without peeling it off during the process.
以上説明したように、本発明はＣＶＤ法を用いたダイヤ
モンド膜の合成方法において基板材料として高融点のシ
リコン合金を用いるように構成したものであるから、厚
膜のダイヤモンドを基板から剥離することなく安定して
合成できる効果を奏する。As explained above, the present invention is configured to use a silicon alloy with a high melting point as the substrate material in the method of synthesizing a diamond film using the CVD method, so that a thick diamond film can be easily removed from the substrate. It has the effect of being able to be synthesized stably.
第１図は本発明の基本原理図である。
１・・・反応室、 ２・・・原料ガス、３・・・
電極、 ４・・・直流電源、５・・・アーク放
電、 ６−・・基板、７・・・排気ガスの流れ、
訃・・プラズマジェット、
９・・・ダイヤモンド膜、１０・・・冷却水の流れ。
本発明の原理説明
第１図FIG. 1 is a diagram of the basic principle of the present invention. 1... Reaction chamber, 2... Source gas, 3...
Electrode, 4... DC power supply, 5... Arc discharge, 6-... Substrate, 7... Flow of exhaust gas, Death... Plasma jet, 9... Diamond film, 10... Cooling water Flow of. Figure 1 explaining the principle of the present invention
Claims (1)
ＶＤ法を用いてダイヤモンド膜を形成することを特徴と
する、ダイヤモンド膜の合成方法。1. Plasma C on a substrate made of high melting point silicon alloy material
A method for synthesizing a diamond film, the method comprising forming a diamond film using a VD method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6203089A JPH02243598A (en) | 1989-03-16 | 1989-03-16 | Method for synthesizing diamond film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6203089A JPH02243598A (en) | 1989-03-16 | 1989-03-16 | Method for synthesizing diamond film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02243598A true JPH02243598A (en) | 1990-09-27 |
Family
ID=13188361
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6203089A Pending JPH02243598A (en) | 1989-03-16 | 1989-03-16 | Method for synthesizing diamond film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02243598A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5479875A (en) * | 1993-09-17 | 1996-01-02 | Kabushiki Kaisha Kobe Seiko Sho | Formation of highly oriented diamond film |
| US5488232A (en) * | 1993-09-28 | 1996-01-30 | North Carolina State University | Oriented diamond film structures on non-diamond substrates |
-
1989
- 1989-03-16 JP JP6203089A patent/JPH02243598A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5479875A (en) * | 1993-09-17 | 1996-01-02 | Kabushiki Kaisha Kobe Seiko Sho | Formation of highly oriented diamond film |
| US5488232A (en) * | 1993-09-28 | 1996-01-30 | North Carolina State University | Oriented diamond film structures on non-diamond substrates |
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