JPH02235789A - Optical data recording member and recording regeneration part thereof - Google Patents
Optical data recording member and recording regeneration part thereofInfo
- Publication number
- JPH02235789A JPH02235789A JP1058371A JP5837189A JPH02235789A JP H02235789 A JPH02235789 A JP H02235789A JP 1058371 A JP1058371 A JP 1058371A JP 5837189 A JP5837189 A JP 5837189A JP H02235789 A JPH02235789 A JP H02235789A
- Authority
- JP
- Japan
- Prior art keywords
- recording
- reflectivity
- optical information
- layer
- reflectance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 18
- 230000008929 regeneration Effects 0.000 title 1
- 238000011069 regeneration method Methods 0.000 title 1
- 239000000463 material Substances 0.000 claims abstract description 15
- 239000000956 alloy Substances 0.000 claims abstract description 11
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 11
- 238000010521 absorption reaction Methods 0.000 claims abstract description 8
- 230000001678 irradiating effect Effects 0.000 claims abstract description 5
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 4
- 229910052763 palladium Inorganic materials 0.000 claims abstract description 4
- 229910052804 chromium Inorganic materials 0.000 claims abstract description 3
- 229910052697 platinum Inorganic materials 0.000 claims abstract description 3
- 229910052709 silver Inorganic materials 0.000 claims abstract description 3
- 150000004770 chalcogenides Chemical class 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 7
- 229910052714 tellurium Inorganic materials 0.000 claims description 4
- 229910052711 selenium Inorganic materials 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- 230000001747 exhibiting effect Effects 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 5
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 abstract description 2
- 229910001120 nichrome Inorganic materials 0.000 abstract description 2
- 238000002310 reflectometry Methods 0.000 abstract 7
- 239000000126 substance Substances 0.000 abstract 2
- 239000010410 layer Substances 0.000 description 24
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 229910052798 chalcogen Inorganic materials 0.000 description 3
- 150000001787 chalcogens Chemical class 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000004417 polycarbonate Substances 0.000 description 3
- 229920000515 polycarbonate Polymers 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 229910003069 TeO2 Inorganic materials 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000012782 phase change material Substances 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- LAJZODKXOMJMPK-UHFFFAOYSA-N tellurium dioxide Chemical compound O=[Te]=O LAJZODKXOMJMPK-UHFFFAOYSA-N 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
Landscapes
- Thermal Transfer Or Thermal Recording In General (AREA)
- Optical Record Carriers And Manufacture Thereof (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、レーザ光を用いて情報の記録、再生可能な光
学情報記録部材、およびその記録再生方法に関するもの
である。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to an optical information recording member capable of recording and reproducing information using laser light, and a recording and reproducing method thereof.
従来の技術
近年、レーザ光を用いて情報を記録、再生する光ディス
クが実用化ざれている。光ディスクには、再生専用のも
のや、一度だけ記録可能な追記型と呼ばれるもの、ある
いは記録、消去が可能なものがある。これらは、それぞ
れの目的、用途に応じて使い分けられているが、現在最
も広く普及しているのが、音楽用コンパクトディスク（
ＣＤ）である。これに用いられているフォーマットはさ
らに、ＣＤ−ＲＯＭ，ＣＤ−Ｉ，ＣＤ−Ｖなどと呼称さ
れるように、単に音楽だけでなく映像、データなども処
理できるようになってきており、今後新たな市場が期待
ざれる。こうした事情から、最近は、単に再生専用のみ
ならず、記録、消去が可能なＣＤの開発もなされるよう
になってきている。2. Description of the Related Art In recent years, optical discs that record and reproduce information using laser light have been put into practical use. Optical discs include read-only discs, write-once discs that can be recorded only once, and discs that can be recorded and erased. These discs are used differently depending on their purpose and use, but the most widely used one currently is the music compact disc (
CD). The formats used for this are now also called CD-ROM, CD-I, CD-V, etc., and are capable of processing not only music but also images and data, and new formats will be added in the future. A promising market is expected. Under these circumstances, recently, CDs have been developed that are not only for playback, but also recordable and erasable.
発明が解決しようとする課題
ここで、問題となるのは、再生専用のＣＤの規格が既に
決定されており、記録、消去が可能な媒体であろうとも
、この規格を満足させることが、広い普及を図る上で必
要なことである。しかしながら、このことが逆に開発上
のネックになっている。その一つが反射率で、現在のＣ
Ｄの規格ではＴｏ−９０％以上とざれており、例えば、
相変化型材料ではこの値を満足させることは、非常に困
難である。その理由は、相変化に用いられて材料そのも
のの反射率がそれほど高くはないこと、光学的に膜厚を
設計して反射率を上げたとしても、レーザ光の吸収が低
くなり、市販されている半導体レーザが使用できなくな
るといった欠点を有していた。Problems to be Solved by the Invention The problem here is that the standard for playback-only CDs has already been determined, and even if the medium is recordable and erasable, it is difficult to satisfy this standard. This is necessary in order to popularize it. However, this has become a bottleneck in development. One of them is reflectance, and the current C
The D standard specifies To-90% or more, for example,
It is extremely difficult to satisfy this value with phase change materials. The reason for this is that the reflectance of the material itself used for phase change is not very high, and even if the reflectance is increased by optically designing the film thickness, the absorption of laser light will be low, and it will not be commercially available. This had the disadvantage that the existing semiconductor laser could no longer be used.
本発明は、上述した事情に鑑み、記録は従来の相変化と
同様な状態、すなわち低パワーで行なうことが可能で、
再生は、現行のＣＤと同様な反射率を有し、コンパチビ
リティーを持った光学情報記録部材及びその記録再生方
法を提供することを目的とする。In view of the above-mentioned circumstances, the present invention enables recording to be performed under the same conditions as conventional phase change, that is, at low power.
The purpose of reproduction is to provide an optical information recording member having a reflectance similar to that of a current CD and having compatibility, and a recording/reproducing method thereof.
課題を解決するための手段
本発明は、２層以上で構成し、半導体レーザに吸収を持
つｒ！！（低反射率）とレーザ光を吸収しない反射Ｎ（
高反射率）とからなり、これをレーザて照射することに
より高反射層を部分的に反応させ、低反射率を有するカ
ルコゲン化物を形成することにより、記録するものであ
る。Means for Solving the Problems The present invention provides an r! ! (low reflectance) and reflection N (which does not absorb laser light)
By irradiating this with a laser, the high reflective layer is partially reacted to form a chalcogenide having a low reflectance, thereby recording.
作用
記録、再生の方法として、記録時には低反射層側からデ
ィスクの回転を再生時とは反対方向に回転させることに
より行い、再生は現行のＣＤと同様の回転方向で再生可
能としたものである。The recording and playback method is such that during recording, the disc is rotated from the low-reflection layer side in the opposite direction to that during playback, and playback can be performed in the same rotational direction as current CDs. .
実施例 以下に、本発明の実施例を図面を参照にして説明する。Example Embodiments of the present invention will be described below with reference to the drawings.
図に本発明の記録部材の一実施例の概略断面図を示す。The figure shows a schematic sectional view of an embodiment of the recording member of the present invention.
図において１は基材でポリカーボネート、アクリルガラ
スなどが用いられる。４は保護層でスビンコートなどに
より塗布ざれる紫外線硬化樹脂などである。２は反射層
で高い反射率を示す、Ａｕ， ＡＩ， Ａｇ， Ｐｔ，
Ｐｄ， Ｎｉ， Ｃｒ， Ｃｏより選択される元素、
並びにこれらの元素を含む合金で構成される。これらの
金属屯独では、一般に熱電導率が大きく、レーザ光の熱
をより有効に利用とする目的から熱電導率の小さいＮｉ
Ｃｒなどの合金も本発明に含まれる。反射層に求められ
る特性は、反射率が高く、上述したカルコゲン化物と合
金を形成することが挙げられる。形成された反射層の反
射率は膜厚にも依存し、Ａｕの場合、基板にポリカーボ
ネートを用いると、 １００Ａで４５％、 ２００Ａで
７０％、３００Ａで８５％となり、かなり薄くても高い
反射率が得られるので有利となる。本発明の主旨は、反
射率を高くすることにより、記録可能なＣＤでも高い反
射率を有することにあり、７０％以上の反射率が得られ
る膜厚を選択する必要かある。In the figure, reference numeral 1 denotes a base material made of polycarbonate, acrylic glass, or the like. 4 is a protective layer made of an ultraviolet curable resin or the like which is coated by subin coating or the like. 2 is a reflective layer showing high reflectance, Au, AI, Ag, Pt,
An element selected from Pd, Ni, Cr, Co,
and an alloy containing these elements. These metals generally have a high thermal conductivity, and in order to use the heat of the laser beam more effectively, Ni, which has a low thermal conductivity, is used.
Alloys such as Cr are also included in the invention. Characteristics required of the reflective layer include high reflectance and formation of an alloy with the above-mentioned chalcogenide. The reflectance of the formed reflective layer also depends on the film thickness; in the case of Au, if polycarbonate is used as the substrate, it will be 45% at 100A, 70% at 200A, and 85% at 300A, so it has a high reflectance even if it is quite thin. This is advantageous because it can be obtained. The gist of the present invention is to increase the reflectance so that even a recordable CD can have a high reflectance, and it is necessary to select a film thickness that provides a reflectance of 70% or more.
３はレーザ光を吸収して光学的変化をもたらす吸収層で
、反射率が低く、レーザ波長７５０−８５０ｎｍにおい
て吸収が認められる材料で構成されていることを特徴と
する。反射率の低い層は半導体レーザを吸収できるよう
にカルコゲナイドＴｅ，Ｓｅ，Ｓを含む材料で構成され
る。本発明の記録媒体は通常は２Ｎで構成されるが、記
録層側を多層構造とし、よりレーザ光の吸収を高めるよ
うな構成にすることは任意である。例えば記録層を、単
独の元素同志で多層構成としレーザ照射後に合金を形成
するといった構成が本発明に含まれる。記録層に用いる
カルコゲン元素としては、Ｔｅ，Ｓｅ，Ｓがあるが本発
明では、これらの元素に、その特性を改良するために、
Ｇｅ，Ｓｎ， Ｉｎ，Ｓｂ，Ｐｂ，Ｃｕ，Ｎｉ，Ｐｄ，
Ｃｏ，Ｓｉなどの金属の他、種々の酸化物、窒化物炭化
物を共存させるこども本発明の範囲内である。Reference numeral 3 denotes an absorption layer that absorbs laser light to bring about an optical change, and is characterized by being made of a material that has low reflectance and exhibits absorption at a laser wavelength of 750 to 850 nm. The layer with low reflectance is made of a material containing chalcogenides Te, Se, and S so as to be able to absorb semiconductor laser light. The recording medium of the present invention is usually composed of 2N, but it is optional to have a multilayer structure on the recording layer side to further enhance the absorption of laser light. For example, the present invention includes a configuration in which the recording layer has a multilayer structure of single elements and forms an alloy after laser irradiation. Chalcogen elements used in the recording layer include Te, Se, and S. In the present invention, in order to improve the properties of these elements,
Ge, Sn, In, Sb, Pb, Cu, Ni, Pd,
It is within the scope of the present invention to coexist various oxides, nitrides, and carbides in addition to metals such as Co and Si.
本発明の記録層は、現行の市販されている半導体レーザ
７５０〜８５０ｎｍに吸収があるものが選択ざれ、必ず
しも上述したカルコゲン化物に限定はざれないが記録特
性の観点から上述した組成が望ましい。The recording layer of the present invention is selected from a layer that absorbs in the wavelength range of 750 to 850 nm as currently available commercially available semiconductor lasers, and is not necessarily limited to the above-mentioned chalcogenide, but from the viewpoint of recording properties, the above-mentioned composition is desirable.
本発明の記録原理はカルコゲナイドと反射層を構成する
材料とが吸収された熱により反応し未記録部と状態が異
なることを利用して信号として検出するものである。異
なる状態とは、構成する材料の特性にもよるが、カルコ
ゲナイドが反射層と反応して合金を形成し、非晶質もし
くは、結晶質状態を形成することにより達成される。ま
た、必ずしも上述した状態でなくとも単に、カルコゲン
と反射層が混合された状態でもよい。要は、これらの状
態がいずれにしても、反射層単独よりは反射率が低く、
信号として検出する事が可能であることが必要条件とな
る。本発明の反射層は、カルコゲナイドの融点と比較す
るといずれも高く、またレーザ光には吸収は示さないの
で、単独では記録材料として用いることができない。し
かしながら、カルコゲンと共存させると、化合物を形成
し、融点が低下し反射層はカルコゲン化物を形成する。The recording principle of the present invention is to detect a signal by utilizing the fact that the chalcogenide reacts with the material constituting the reflective layer due to the absorbed heat, and the state is different from that of the unrecorded area. The different states are achieved by the chalcogenide reacting with the reflective layer to form an alloy and forming an amorphous or crystalline state, depending on the properties of the constituent materials. Further, the state does not necessarily have to be as described above, but may be simply a state in which chalcogen and the reflective layer are mixed. In short, in any of these conditions, the reflectance is lower than that of the reflective layer alone;
A necessary condition is that it can be detected as a signal. The reflective layer of the present invention has a melting point higher than that of chalcogenide and does not absorb laser light, so it cannot be used alone as a recording material. However, when it coexists with chalcogen, a compound is formed, the melting point is lowered, and the reflective layer forms a chalcogenide.
例えば、Ａｕの融点は、単独では１０６３℃であるがＴ
ｅとの合金ＡｕＴｅ２は４６４℃となる。これは本発明
の他の材料でも同様である。したがって、半導体レーザ
の照射により、融点の高い反射層成分をカルコゲン化物
を形成し反射率を低減させることが十分可能である。For example, the melting point of Au alone is 1063°C, but T
The temperature of the alloy AuTe2 with e is 464°C. This also applies to other materials of the present invention. Therefore, it is possible to reduce the reflectance by forming a chalcogenide of the reflective layer component having a high melting point by irradiating the semiconductor laser.
本発明のもう一つの特徴は、上述した媒体の記録、再生
方法にある。それは、記録時には再生する面とは反対の
面（反射率の低い面）を用いて行なう点にある。こうす
ることにより、レーザ光を効率よく記録膜に吸収させる
ことが可能で、しかも再生時は反射率が高いので、現行
のＣＤ再生ドライブを用いることが可能となる。さらに
、記録時は、ディスクを再生時とは反対方向に回転する
ことにより、ディスク上のフォーマットをそのまま利用
することが可能である。現行のＣＤはグループと呼ばれ
る溝部分に記録情報が書き込まれているが、本発明にお
いては記録時には溝ではなく見かけ上、凸部（ランドと
呼ばれている）に記録することになるが、これはトラッ
キングの極性を反転させることにより簡便に行なうこと
が可能で技術的には何等問題はない。Another feature of the present invention is the method for recording and reproducing the above-mentioned medium. The reason is that during recording, the surface opposite to the surface for reproduction (a surface with low reflectance) is used. By doing so, it is possible to efficiently absorb the laser beam into the recording film, and since the reflectance is high during reproduction, it is possible to use the current CD reproduction drive. Furthermore, during recording, by rotating the disc in the opposite direction to that during playback, it is possible to use the format on the disc as is. On current CDs, recording information is written in grooves called groups, but in the present invention, when recording, information is recorded not in the grooves but in apparent protrusions (called lands). This can be easily done by reversing the tracking polarity, and there is no technical problem.
実施例１
厚さが１．２ｍｍ、直径１２０ｍｍのポリカーボネート
基材に、反射層としてＡｕをスパッタリング装置を用い
２００Ａスバッタした。その後、記録膜としてＴｅを６
０ＯＡスパッタした。この上にアクリル系の紫外線硬化
樹脂をスピンコートにより１０μｍ塗布した。Example 1 Au was sputtered at 200 A as a reflective layer onto a polycarbonate base material having a thickness of 1.2 mm and a diameter of 120 mm using a sputtering device. After that, Te6 was added as a recording film.
0OA sputtering was performed. On top of this, an acrylic ultraviolet curing resin was applied by spin coating to a thickness of 10 μm.
この試料の反射率は反射層側で７３％、記録膜側で３０
％であった。次にこのディスクを用い電気的特性を評価
した。線速度１．３ｍ／ｓで回転方向が再生時とは異な
る時計方向で回転させ、記録パワー８ｍＷで、ＥＦＭエ
ンコーダを用いて基準信号（８．１５ＭＨｚ）をＥＦＭ
−ＣＤフォーマット信号にて記録した。The reflectance of this sample was 73% on the reflective layer side and 30% on the recording film side.
%Met. Next, the electrical characteristics of this disk were evaluated. The reference signal (8.15 MHz) was rotated at a linear velocity of 1.3 m/s in a clockwise direction different from that during playback, and the reference signal (8.15 MHz) was converted to EFM using an EFM encoder at a recording power of 8 mW.
- Recorded in CD format signal.
再生は記録時の面とは異なる面で行い、再生信号を評価
したところ、良好なアイパターンが観測された。Reproduction was performed on a different surface from the recording surface, and when the reproduced signal was evaluated, a good eye pattern was observed.
実施例２
実施例１において記録膜をＴｅとＴｅＯ２の混合物をス
バッタした。膜の組成は５０： ５０であった。Example 2 In Example 1, the recording film was sputtered with a mixture of Te and TeO2. The composition of the film was 50:50.
記録膜例の反射率は１０％であった。他は実施例１と同
様である。The reflectance of the recording film example was 10%. The rest is the same as in Example 1.
この試料を実施例ｌと同様の装置、条件で評価したとこ
ろ、良好なアイパターンが観測された。When this sample was evaluated using the same equipment and conditions as in Example 1, a good eye pattern was observed.
実施例３
実施例ｌにおいて反射膜をＡ１にし４０ＯＡをスパッタ
した。反射率は７５％であった。他は実施例ｌと同様で
ある。Example 3 In Example 1, the reflective film was A1 and 40OA was sputtered. The reflectance was 75%. The rest is the same as in Example 1.
この試料を実施例ｌと同様の装置、条件で評価したとこ
ろ、良好なアイパターンが観測された。When this sample was evaluated using the same equipment and conditions as in Example 1, a good eye pattern was observed.
実施例４
実施例１において反射膜をＮｉＣｒにし４００Ａをスバ
ッタした。反射率は７１％であった。他は．実施例ｌと
同様である。Example 4 In Example 1, the reflective film was made of NiCr and 400A was sputtered. The reflectance was 71%. Others. Same as Example 1.
この試料を実施例１と同様の装置、条件で評価したとこ
ろ、良好なアイパターンが観測された。When this sample was evaluated using the same equipment and conditions as in Example 1, a good eye pattern was observed.
実施例５
実施例１において記録膜をＴｅとｓｂを層状にスパッタ
した。反射層２ ０ ＯＡ， Ｓｂ２ ０ ＯＡ，
Ｔｅ３ ０ ０Ａの順である。記録膜側の反射率は２０
％であった。Example 5 In Example 1, the recording film was formed by sputtering Te and sb in a layered manner. Reflective layer 2 0 OA, Sb2 0 OA,
The order is Te3 0 0A. The reflectance on the recording film side is 20
%Met.
他は実施例Ｉと同様である。The rest is the same as in Example I.
この試料を実施例ｌと同様の装置、条件で評価したとこ
ろ、良好なアイパターンが観測された。When this sample was evaluated using the same equipment and conditions as in Example 1, a good eye pattern was observed.
発明の効果
以上述べたように本発明の光学情報記録部材、及び記録
、再生方法を用いることにより、容易に現行ＣＤとコン
パチビリティーを有し、記録可能なＣＤを提供すること
ができる。これらのＣＤの用途としては、記録可能なＣ
Ｄ． 少量多品種に対応可能なＣＤ−ＲＯＭの生産な
ど、種々の用途が考えられる。Effects of the Invention As described above, by using the optical information recording member and the recording and reproducing method of the present invention, it is possible to easily provide a recordable CD that is compatible with current CDs. These CDs are used for recordable C
D. Various applications can be considered, such as the production of CD-ROMs that can be produced in small quantities and in a wide variety of products.
図は本発明の光学情報記録媒体の一実施例の断面図であ
る。
１・・・基材、２・・・反射層、３・・・吸収層、４・
・・保護層。The figure is a sectional view of an embodiment of the optical information recording medium of the present invention. DESCRIPTION OF SYMBOLS 1... Base material, 2... Reflective layer, 3... Absorption layer, 4...
...Protective layer.
Claims (6)
光学情報記録部材において、高い反射率を有する層が、
Ａｕ、Ａｌ、Ａｇ、Ｐｔ、Ｐｄ、Ｎｉ、Ｃｒ、Ｃｏより
選択される元素、並びにこれらの元素を含む合金で構成
され、反射率の低い層が、レーザ波長７５０−８５０ｎ
ｍにおいて吸収が認められる材料で構成されたことを特
徴とする光学情報記録部材。(1) In an optical information recording member composed of a layer structure of two or more layers with different reflectances, the layer with high reflectance is
The layer with low reflectance is composed of an element selected from Au, Al, Ag, Pt, Pd, Ni, Cr, and Co, and an alloy containing these elements, and has a laser wavelength of 750-850n.
An optical information recording member characterized in that it is made of a material that exhibits absorption at m.
められる材料が少なくともカルコゲナイドＴｅ、Ｓｅ、
Ｓを一種以上含んでいることを特徴とする請求項１記載
の光学情報記録部材。(2) The material exhibiting absorption at a laser wavelength of 750-850 nm is at least chalcogenide Te, Se,
The optical information recording member according to claim 1, characterized in that it contains one or more types of S.
し、未照射部との間で信号として検出可能な状態変化を
起こしていることを特徴とする請求項１又は２記載の光
学情報記録部材。(3) The optical information according to claim 1 or 2, characterized in that a layer with a high reflectance and a layer with a low reflectance react with each other due to laser irradiation, causing a state change that can be detected as a signal between the non-irradiated area and the non-irradiated area. Recording material.
波長７５０−８５０ｎｍにおいて７０％以上で有ること
を特徴とする請求項１記載の光学情報記録部材。(4) The optical information recording member according to claim 1, wherein the reflectance of the high reflectance surface is 70% or more at a laser wavelength of 750 to 850 nm in an unrecorded state.
光学情報記録部材において、記録は相対的に反射率の低
い面にレーザビームを照射して行い、再生は反射率の高
い面から行なうことを特徴とする光学情報記録部材の記
録再生方法。(5) In optical information recording members composed of two or more layers with different reflectances, recording is performed by irradiating a laser beam onto the surface with relatively low reflectance, and reproduction is performed from the surface with high reflectance. 1. A recording and reproducing method for an optical information recording member, characterized in that:
光学情報記録部材において、記録を相対的に反射率の低
い面にレーザビームを照射して行う際に、ディスクの回
転方向が再生時とは反対方向であることを特徴とする請
求項５記載の光学情報記録部材の記録再生方法。(6) In an optical information recording member composed of a layer structure of two or more layers with different reflectances, when recording is performed by irradiating a laser beam onto a surface with a relatively low reflectance, the direction of rotation of the disk is 6. The method of recording and reproducing an optical information recording member according to claim 5, wherein the direction is opposite to the time.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1058371A JPH02235789A (en) | 1989-03-10 | 1989-03-10 | Optical data recording member and recording regeneration part thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1058371A JPH02235789A (en) | 1989-03-10 | 1989-03-10 | Optical data recording member and recording regeneration part thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02235789A true JPH02235789A (en) | 1990-09-18 |
Family
ID=13082470
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1058371A Pending JPH02235789A (en) | 1989-03-10 | 1989-03-10 | Optical data recording member and recording regeneration part thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02235789A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0346135A (en) * | 1989-07-13 | 1991-02-27 | Sony Corp | Optical recording medium |
| EP0594516A2 (en) * | 1992-10-19 | 1994-04-27 | Eastman Kodak Company | High stability silver based alloy reflectors for use in a writable compact disk |
| US5389417A (en) * | 1992-08-28 | 1995-02-14 | Adk Corporation | Optical recording medium |
| JPH07232478A (en) * | 1993-12-27 | 1995-09-05 | Nec Corp | Information recording medium |
| EP0785544A1 (en) * | 1996-01-18 | 1997-07-23 | SAMSUNG ELECTRONICS Co. Ltd. | Worm type optical recording medium and optical recording method therefor |
| US5783364A (en) * | 1996-08-20 | 1998-07-21 | Presstek, Inc. | Thin-film imaging recording constructions incorporating metallic inorganic layers and optical interference structures |
-
1989
- 1989-03-10 JP JP1058371A patent/JPH02235789A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0346135A (en) * | 1989-07-13 | 1991-02-27 | Sony Corp | Optical recording medium |
| US5389417A (en) * | 1992-08-28 | 1995-02-14 | Adk Corporation | Optical recording medium |
| EP0594516A2 (en) * | 1992-10-19 | 1994-04-27 | Eastman Kodak Company | High stability silver based alloy reflectors for use in a writable compact disk |
| EP0594516A3 (en) * | 1992-10-19 | 1995-03-22 | Eastman Kodak Co | High stability silver based alloy reflectors for use in a writable compact disk. |
| JPH07232478A (en) * | 1993-12-27 | 1995-09-05 | Nec Corp | Information recording medium |
| EP0785544A1 (en) * | 1996-01-18 | 1997-07-23 | SAMSUNG ELECTRONICS Co. Ltd. | Worm type optical recording medium and optical recording method therefor |
| US5783364A (en) * | 1996-08-20 | 1998-07-21 | Presstek, Inc. | Thin-film imaging recording constructions incorporating metallic inorganic layers and optical interference structures |
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