JPH02229477A - Solid-state light-emitting display - Google Patents
Solid-state light-emitting displayInfo
- Publication number
- JPH02229477A JPH02229477A JP63282162A JP28216288A JPH02229477A JP H02229477 A JPH02229477 A JP H02229477A JP 63282162 A JP63282162 A JP 63282162A JP 28216288 A JP28216288 A JP 28216288A JP H02229477 A JPH02229477 A JP H02229477A
- Authority
- JP
- Japan
- Prior art keywords
- led chip
- hole
- insulating plate
- solid
- emitting display
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000007747 plating Methods 0.000 claims description 25
- 239000010410 layer Substances 0.000 claims description 10
- 239000012790 adhesive layer Substances 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 238000005553 drilling Methods 0.000 claims 1
- 239000000853 adhesive Substances 0.000 abstract description 17
- 230000001070 adhesive effect Effects 0.000 abstract description 17
- 229920005989 resin Polymers 0.000 abstract description 4
- 239000011347 resin Substances 0.000 abstract description 4
- 238000007789 sealing Methods 0.000 abstract description 4
- 229910052709 silver Inorganic materials 0.000 abstract description 3
- 239000004332 silver Substances 0.000 abstract description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 229910052759 nickel Inorganic materials 0.000 description 5
- 229920006015 heat resistant resin Polymers 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 239000013039 cover film Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000011889 copper foil Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000001746 injection moulding Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 244000062175 Fittonia argyroneura Species 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011256 inorganic filler Substances 0.000 description 1
- 229910003475 inorganic filler Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1515—Shape
- H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1517—Multilayer substrate
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、鉄道，港湾，空港をはじめ、一般，高速道路
等において、案内，警報表示用等に用いられるＬＥＤを
使用した点滅式の固体発光表示装置の改良に関する。[Detailed Description of the Invention] [Field of Industrial Application] The present invention relates to a flashing solid-state device using LEDs used for guidance, warning display, etc. in railways, ports, airports, general roads, expressways, etc. This invention relates to improvements in light emitting display devices.
従来、この種の固体発光表示装置は、例えば、マトリッ
クス状に配列された発光素子のうち任意のものを通電点
灯して任意の文字．記号，模様などをドットパターンと
して表示できるようにしたものが提案されている．
このような、固体発光表示装置の基本的な構造は、絶縁
層を挟んで互いに立体格子状に配列された複数の上部電
極と下部電極との重合部分に半導体チップを配置して構
成されている。例えば、第８図，第９図に示すように、
上部電極ｌＯＯと下部電極１０１が絶縁層１０２を挟ん
で互いに立体格子状に配列し、上部電極１００を形成し
た絶縁板１０２と下部電極１０１を形成した絶縁板ｌ０
３とを貼合わせ、次に上部電極１００を備えた絶縁板１
０２の下部電極１０１と重合する部分に透孔１０４を穿
孔し、その透孔１０４の各々にＬＥＤチップ１０５の下
部が下部電極１０１に銀ペーストなどの導電性ペースト
を用いて接続配置し、更に、前記各々のＬＥＤチップ１
０５の上部をボンディングワイヤ１０６により逐一上部
電１１００に独立した状態で接続することにより構成さ
れている．
前記構造では、超音波振動を利用して１つ１つのＬＥＤ
チップ１０５の上部にワイヤ１０６をボンディングし、
これを引き出し上部電極１００に逐一ボンディング接続
する．この場合、ボンディングを行なう時超音波振動を
利用している関係上、導電性ペーストがＬＥＤチップ１
０５の下部より移動するなどして充分な接着強度が得ら
れず、又、ボンディング時にワイヤー１０６が切損した
りすることがあった．
〔発明が解決しようとする課題〕
前記構造の固体発光表示装置では，図示するところから
明らかなように、ボンディング時の趙音波振動により導
電性ペーストとＬＥＤチップの接着強度を保持すること
が難しく、又、ＬＥＤチップの高輝度点灯を行った場合
、ＬＥＤチップ及び各接着部分の温度が上昇し、充分な
長期信転性が得られない問題があった．更に、ＬＥＤチ
，プを挿入する透孔は大きすぎてＬＥＤチップの発光光
量を充分に伝達することができず、表示の鮮明度を高め
ることが困難であり、かつ、ＬＥＤチップの直列点灯を
行うことができない問題もあった。Conventionally, this type of solid-state light-emitting display device has been used, for example, to display arbitrary characters by energizing any of the light-emitting elements arranged in a matrix and lighting them. A system that can display symbols, patterns, etc. as dot patterns has been proposed. The basic structure of such a solid-state light emitting display device is that a semiconductor chip is arranged at the overlapping portion of a plurality of upper electrodes and lower electrodes that are arranged in a three-dimensional lattice shape with an insulating layer in between. . For example, as shown in Figures 8 and 9,
An upper electrode lOO and a lower electrode 101 are arranged in a three-dimensional lattice shape with an insulating layer 102 in between, an insulating plate 102 forming an upper electrode 100, and an insulating plate l0 forming a lower electrode 101.
3 and then the insulating plate 1 provided with the upper electrode 100.
Through-holes 104 are bored in the portions of 02 that overlap with the lower electrodes 101, and the lower portions of the LED chips 105 are connected to the lower electrodes 101 in each of the through-holes 104 using a conductive paste such as silver paste, and further, Each of the above LED chips 1
05 are individually connected to upper electrodes 1100 by bonding wires 106. The structure uses ultrasonic vibration to separate each LED.
A wire 106 is bonded to the top of the chip 105,
This is pulled out and connected to the upper electrode 100 one by one by bonding. In this case, since ultrasonic vibrations are used during bonding, the conductive paste is attached to the LED chip 1.
The wire 106 moved from the bottom of the wire 106, making it impossible to obtain sufficient adhesive strength, and the wire 106 sometimes broke during bonding. [Problems to be Solved by the Invention] In the solid-state light emitting display device having the above structure, as is clear from the diagram, it is difficult to maintain the adhesive strength between the conductive paste and the LED chip due to the vibration of the sonic wave during bonding. Furthermore, when the LED chip is lit at high brightness, the temperature of the LED chip and each adhesive part increases, making it impossible to obtain sufficient long-term reliability. Furthermore, the through hole into which the LED chip is inserted is too large to transmit the amount of light emitted by the LED chip, making it difficult to improve the clarity of the display and making it difficult to light the LED chips in series. There were some problems that could not be done.
本発明の固体発光表示装置は、これを構成するＬＥＤチ
ップの位置決め固定用の透孔を狭隘に設け、ポンディン
グ時におけるＬＥＤチップの導電接着力の低下を防ぐと
ともに、位置決め固定用の透孔の上部をテーパー状とし
てこの部分に、湿式メッキ、又は乾式メッキを施して反
射鏡を形成し、ＬＥＤチップの発光光量の有効な外部伝
達を可能とする。更に、アルミ板上に絶縁層を挟んで下
部電極を形成することにより、放熱性を良好に改良し、
しかも、前記位置決め固定用の透孔に湿式メッキ、又は
乾式メッキを施して設けた反射鏡をＬＥＤチップの下部
から上部電極への引出し導体とすることによって、ＬＥ
Ｄチップの直列点灯を可能にしたことを特徴としている
．
〔作 用〕
本発明の固体発光表示装置は、ＬＥＤナップを取付ける
ための絶縁プレートに、ＬＥＤチップの位置決め固定用
の狭隘な透孔を設けることにより、ＬＥＤチップ接着の
ための導電ペスト、例えば、銀糸ペースト，銅系ペース
ト．ニッケル系ヘー ストを、位置決め固定用の透孔に
滴定する際、下部電極と、上記電極を備えた絶縁プレー
トとの接着層とを、ＬＥＤチップの位置決め固定用の透
孔よりやや大きく設けることによって安定した接着力を
得ることができる。又、導電ペースト上へＬＥＤチップ
を自動装着する場合、位置決め固定用の狭隘な透孔を備
えていることにより、ＬＥＤチップの転倒が防止でき、
各ＬＥＤチップの上部位置を同じ高さに揃えて装着でき
、大型の固体発光表示装置の製造に採用した場合、信鎖
性及び生産性の著しい向上をはかることができる．
更に、ＬＥＤチップの位置決め固定用の透孔に、例えば
、化学ニッケルメッキ９化学銅メッキ．ニッケルメッキ
，クロームメッキ等の湿式メッキ、又は、スパッタリン
グ，イオン蒸着，イオンプレイテング等にてニッケル，
銅．クローム等の乾式メッキを行なって薄膜を形成する
ことによりＬＥＤチップからの発光光量を効率よく外部
への伝達を可能とする．又、この薄膜を利用して下部電
極を上部電極に引き出すことができ、ＬＥＤチップの直
列点灯の問題が解決できる．従って、耐熱性樹脂に孔明
加工をしてスルホールメッキによる上下接続を行う必要
がなくなり、高密度でのＬＥＤチップの実装が可能とな
り、高解像度の固体発光表示装置が実現できる。その上
、Ｆ！膜を上部電極にＬＥＤチップの上部からワイヤー
ボンディングするための金メッキの下地とすることが可
能となり、量産性に優れ、価格競争力のある固体発光表
示装置を提供することができる。In the solid-state light emitting display device of the present invention, the through holes for positioning and fixing the LED chips constituting the device are narrowly provided to prevent the conductive adhesive strength of the LED chips from decreasing during bonding, and the through holes for positioning and fixing the LED chips are narrowly formed. The upper part is tapered and this part is subjected to wet plating or dry plating to form a reflecting mirror, thereby enabling effective transmission of the amount of light emitted by the LED chip to the outside. Furthermore, by forming the lower electrode on the aluminum plate with an insulating layer in between, we have improved heat dissipation.
Moreover, by using a reflective mirror provided by wet plating or dry plating on the through hole for positioning and fixing as a lead-out conductor from the lower part of the LED chip to the upper electrode, the LE
The feature is that it enables series lighting of D chips. [Function] The solid-state light emitting display device of the present invention has a narrow through hole for positioning and fixing the LED chip in the insulating plate for attaching the LED nap, so that a conductive paste for adhering the LED chip, for example, Silver thread paste, copper paste. When titrating nickel-based heaste into the through hole for positioning and fixing, the adhesive layer between the lower electrode and the insulating plate provided with the electrode is provided slightly larger than the through hole for positioning and fixing the LED chip. Stable adhesive strength can be obtained. In addition, when automatically attaching the LED chip onto the conductive paste, the narrow through hole for positioning and fixing can prevent the LED chip from falling over.
The upper positions of each LED chip can be mounted at the same height, and when used in the manufacture of large solid-state light emitting display devices, reliability and productivity can be significantly improved. Furthermore, the through hole for positioning and fixing the LED chip is coated with, for example, chemical nickel plating 9 chemical copper plating. Wet plating such as nickel plating, chrome plating, or sputtering, ion vapor deposition, ion plating, etc.
copper. By forming a thin film by dry plating with chrome, etc., it is possible to efficiently transmit the amount of light emitted from the LED chip to the outside. Furthermore, by using this thin film, the lower electrode can be drawn out to the upper electrode, which solves the problem of series lighting of LED chips. Therefore, it is no longer necessary to drill holes in the heat-resistant resin and perform upper and lower connections using through-hole plating, making it possible to mount LED chips at high density and realize a high-resolution solid-state light emitting display device. Besides, F! It becomes possible to use the film as a gold plating base for wire bonding to the upper electrode from the top of the LED chip, and it is possible to provide a solid-state light emitting display device that is excellent in mass production and is cost competitive.
以下、図面を参照しながら本発明の固体発光表示装置に
ついて詳しく説明する。Hereinafter, the solid-state light emitting display device of the present invention will be described in detail with reference to the drawings.
第１図は本発明の第１実施例の構造を示す縦断面図、第
６図はその製造工程を順次示す説明図である．第１図．
第６図において、ｌ３は軽量．放熱性を考慮した薄板の
アルミ板である（第６図Ａ参照），１３’ は下部電極
板１ｌを絶縁するための絶縁層で、エボキシ系耐熱樹脂
を、接着剤として用いる（第６図Ｂ参照）．高熱伝導性
が必要な場合には無機系フィラーを混入し、熱伝導性を
改良する。これらの耐熱樹脂をＢステージ（半硬化）状
態まで硬化させ銅箔１１ａを貼合せ後、本硬化を行なっ
て銅張板３を形成する（第６図Ｃ参照）。前記アルミ板
ｌ３に絶縁層１３″を挟んで銅箔１１ａを貼合せて形成
したアルミベース銅張板３を公知の印刷法又は写真法に
てエンチングレジストａを形成し、エッチングを行って
下部電極４を形成する（第６図Ｄ参照）．次に、図示し
ない射出成形機により耐熱性樹脂を射出成形にて固体表
示装置のＬＥＤチップ１５の位置決め固定用の透孔ｌ４
を備えた絶縁プレートｌ２を成形加工する。（第６図Ｅ
参照）。前記透孔１４は上部を開拡し、下部はＬＥＤチ
ップ１５とほぼ同径に形成する．つづいて、前記透孔ｌ
４の内周面から絶縁プレート１２の上面にかけて、湿気
メンキを行いやすくするために、ブリエッチング→キャ
タリスト処理を行なう（第６図Ｆ参照）．なお、絶縁プ
レー１−１２の上面には必要な部位以外にメッキ被膜が
析出しないように、あらかじめメッキレジスト１８を形
成しておく。次に、化学ニッケルメッキを下地としてそ
の上に電気銅メッキ，電気ニッケルメッキを行ない、透
孔１４の内周面から絶縁プレート１２の表面にかけて反
射鏡ｌ９を形成する（第６図Ｇ参照）。このあと、前記
メッキレジストｌ８上に上部電極２０を設ける（第６図
Ｈ参照）．而記のようにして形成した下部電掻４上に上
部電極２０設けた絶縁プレー１−１２を接着して第１図
に示す固体発光表示装Ｗ１を構成する。FIG. 1 is a vertical sectional view showing the structure of a first embodiment of the present invention, and FIG. 6 is an explanatory diagram showing the manufacturing process sequentially. Figure 1.
In Figure 6, l3 is lightweight. 13' is an insulating layer for insulating the lower electrode plate 1l, and epoxy heat-resistant resin is used as an adhesive (see Fig. 6B). reference). When high thermal conductivity is required, an inorganic filler is mixed to improve thermal conductivity. After these heat-resistant resins are cured to a B-stage (semi-cured) state and the copper foil 11a is bonded thereto, main curing is performed to form the copper clad board 3 (see FIG. 6C). An etching resist a is formed on the aluminum base copper clad plate 3, which is formed by bonding a copper foil 11a to the aluminum plate 13 with an insulating layer 13'' in between, by a known printing method or a photographic method, and etching is performed to form a lower part. Electrodes 4 are formed (see FIG. 6D).Next, a through hole 14 for positioning and fixing the LED chip 15 of the solid-state display device is formed by injection molding a heat-resistant resin using an injection molding machine (not shown).
An insulating plate l2 having the following shapes is formed. (Figure 6E
reference). The upper part of the through hole 14 is widened, and the lower part is formed to have approximately the same diameter as the LED chip 15. Next, the through hole l
In order to facilitate moisture cleaning from the inner circumferential surface of 4 to the upper surface of insulating plate 12, perform brie etching and then catalyst treatment (see Figure 6F). Incidentally, a plating resist 18 is previously formed on the upper surface of the insulating plate 1-12 so that the plating film is not deposited in areas other than the necessary parts. Next, using chemical nickel plating as a base, electrolytic copper plating and electrolytic nickel plating are performed thereon to form a reflecting mirror 19 from the inner peripheral surface of the through hole 14 to the surface of the insulating plate 12 (see FIG. 6G). After this, an upper electrode 20 is provided on the plating resist 18 (see FIG. 6H). An insulating plate 1-12 provided with an upper electrode 20 is adhered to the lower electric scraper 4 formed as described above, thereby constructing the solid-state light emitting display W1 shown in FIG.
次に、前記下部電極４と絶縁プレー｝１２の接着方法を
説明すると印刷法にて接着剤を所定の部分だけ印刷する
か、フイルム状接着シートを所定の形状に打抜加工して
ラミネートする方法がある。Next, the method of adhering the lower electrode 4 and the insulation plate 12 will be explained.A method is to print adhesive only on a predetermined portion using a printing method, or to punch a film-like adhesive sheet into a predetermined shape and laminate it. There is.
本件発明においては、フイルム状接着シートをラミネー
トする方法で実施した。まず、第７図のフイルム状接着
シ一ト５２を、カバーフイルム５３、雌型祇５ｌを備え
た状態で、絶縁プレート１２の透孔ｌ４と対応する部分
を、透孔ｌ４よりやや大きな形状に打抜加工し、次に上
部のカバーフイルム５３を剥がし、第６図Ｈで示す絶縁
プレート１２の下側に当接し、つづいて、下側の離型紙
５１を剥がして第６図Ｄに示す下部電極４の上側に当接
する。即ち、下部電極４と絶縁プレート１２との間にカ
バーフイルム５３及び離型紙５１を除去した接着シ一ト
５２を介拝する。この状態で図示しない加圧成形装置に
より、１６０゜Ｃにて１５ｋｇ／ｃｄで加圧しながら１
５分間、その状態を保持し仮接着を行なう．次いで、１
７０゜Ｃにて１２０分、無加圧状態で加熱し接着剤の熱
硬化を行ない絶縁プレートｌ２と下部電極４とを一体的
に接着して固定発光装置ｌを設ける．
次に、前記のようにして構成した固体発光装宜１にＬＥ
Ｄチップ１５を取付け、これを導電接着する場合につい
て説明する。The present invention was carried out by a method of laminating film-like adhesive sheets. First, with the film-like adhesive sheet 52 shown in FIG. 7 equipped with the cover film 53 and the female mold 5l, the portion corresponding to the through hole l4 of the insulating plate 12 is shaped slightly larger than the through hole l4. After punching, the upper cover film 53 is peeled off, and the lower part of the insulating plate 12 shown in FIG. It comes into contact with the upper side of the electrode 4. That is, the adhesive sheet 52 from which the cover film 53 and release paper 51 have been removed is interposed between the lower electrode 4 and the insulating plate 12. In this state, a pressure molding device (not shown) is used to press 15 kg/cd at 160°C.
Hold this state for 5 minutes to perform temporary adhesion. Then 1
The adhesive is heated at 70° C. for 120 minutes without pressure to cure the adhesive, and the insulating plate 12 and the lower electrode 4 are integrally bonded to form a fixed light emitting device 1. Next, the solid-state light emitting device 1 constructed as described above is
The case where the D chip 15 is attached and conductively bonded will be explained.
第１図において、絶縁プレートｌ２に開口した透孔１４
から銀ペースト等の導電ペーストを定量注入し、透孔１
４下側のフイルム状接着シート５２の孔部５４に充填す
る。このあと、ＬＥＤチンブ１５を透孔１４に挿入し、
前記導電ペーストを加熱硬化させることにより、導電接
着層２ｌを形成してＬＥＤチップｌ５と下部電橿仮１１
とを導電接着する。次に、ＬＥＤチップ１５の一方の電
極と上部電極２０とをワイヤ１６にて接続する。In FIG. 1, a through hole 14 opened in the insulating plate l2
Inject a certain amount of conductive paste such as silver paste from through hole 1.
4. Fill the holes 54 of the lower film-like adhesive sheet 52. After this, insert the LED chimbu 15 into the through hole 14,
By heating and curing the conductive paste, a conductive adhesive layer 2l is formed, and the LED chip l5 and the lower electric lamp 11 are bonded together.
and conductive adhesive. Next, one electrode of the LED chip 15 and the upper electrode 20 are connected with a wire 16.
この際、上部電極２０は、第１図のように、メソキレジ
スト１８上に取付けられているので、Ｌ ＥＤチップ１
５の他方の電穫、即ち、導電接着層２ｌと上部電極２０
とは通電することがないため、第３図に示すように、複
数のＬＥＤチップ１５を点灯並列回路方式で接続したり
、あるいは、第５図で示すように、マトリックス点灯回
路方式で接続しての使用が可能となる。At this time, since the upper electrode 20 is attached on the meso-resist 18 as shown in FIG.
5, that is, the conductive adhesive layer 2l and the upper electrode 20
Since the LED chips 15 are not energized, a plurality of LED chips 15 can be connected in a lighting parallel circuit system as shown in Figure 3, or in a matrix lighting circuit system as shown in Figure 5. It becomes possible to use
ワイヤｌ６にてＬＥＤチソプ１５の接続を行なった後、
第１図のように、上部電極２０，ＬＥＤチップ１５，ワ
イヤ１６等、上部電極４の表面に露出している部材を封
止樹脂により一体的に樹脂モールドを行い、封止樹脂部
２２を設けることにより、上記各部材を強固に保持させ
て、本発明の固体発光表示装置ｌを構成する．
なお、第３図及び第５図で示す、４−１、４一２・・・
・・はＬＥＤチップ１５を並列接続するために使用する
下部電極を示し、又、２０−１．２０−２は同じく上部
電極を示すものである．次に、第２図において、本発明
の第２実施例について説明する．
この第２実施例は、第１実施例とは異なり、ＬＥＤチッ
プを直列点灯回路方式で接続できるように構成したもの
で、その構造は第２図で示すように、反射鏡ｌ９の部分
に、例えば、金メッキ等の導電性メッキ層２０ａを形成
するとともに、上記電極２０を、導電性メッキ層２０ａ
に接続し、この導電性メッキ層２０ａの介在によって、
ＬＥＤチップｌ５の下部、即ち、導電接着層２１と上部
電極２０とを通電可能とすることにより、ＬＥＤチップ
ｌ５を第４図で示す如く、直列接続することが可能とな
り、これにより、ＬＥＤチップｌ５を直列点灯回路方式
で接続して使用することができる．この際、ＬＥＤチッ
プｌ５と上部電極２０との接続は第１実施例と同様であ
るため、説明は省略する．
〔発明の効果〕
本発明は以上説明したように構成されているの・で、次
に示すような効果を有する．
（１）、ＬＥＤチップは絶縁プレートに、上部を開拡し
、下部を細径に穿孔した透孔に挿入して導電性接着層に
接着保持されているので、ワイヤボンデング時、ＬＥＤ
チップが振動して導電性接着層が移動するようなことが
ないため、ＬＥＤチップをその機械的強度を強くして取
付けることができる。After connecting the LED chisop 15 with wire l6,
As shown in FIG. 1, the members exposed on the surface of the upper electrode 4, such as the upper electrode 20, the LED chip 15, and the wire 16, are integrally molded with a sealing resin to form a sealing resin part 22. As a result, each of the above-mentioned members is firmly held to constitute the solid-state light emitting display device l of the present invention. In addition, 4-1, 4-2, etc. shown in FIGS. 3 and 5
. . . indicates a lower electrode used to connect the LED chips 15 in parallel, and 20-1, 20-2 similarly indicates an upper electrode. Next, referring to FIG. 2, a second embodiment of the present invention will be described. This second embodiment is different from the first embodiment in that it is configured so that the LED chips can be connected in a series lighting circuit system, and its structure is as shown in FIG. For example, a conductive plating layer 20a such as gold plating is formed, and the electrode 20 is connected to the conductive plating layer 20a.
and by the interposition of this conductive plating layer 20a,
By making it possible to conduct electricity between the lower part of the LED chip l5, that is, the conductive adhesive layer 21 and the upper electrode 20, it becomes possible to connect the LED chips l5 in series as shown in FIG. can be used by connecting them in a series lighting circuit system. At this time, since the connection between the LED chip 15 and the upper electrode 20 is the same as that in the first embodiment, a description thereof will be omitted. [Effects of the Invention] Since the present invention is configured as explained above, it has the following effects. (1) The LED chip is inserted into an insulating plate, with the upper part expanded and the lower part drilled into a small diameter hole, and is adhered and held by the conductive adhesive layer, so when wire bonding, the LED chip
Since the conductive adhesive layer does not move due to vibration of the chip, the LED chip can be mounted with increased mechanical strength.
（２）、ＬＥＤチップを取付けるための透孔は、必要最
少限度の大きさで絶縁プレートに穿孔されているので、
ＬＥＤチップの取付けを高密度化することができる．
（３）、更に、ＬＥＤチップの取付けを高密度化しても
、本発明は、下部電極を構成する部材が、従来の絶縁材
から、電気的に絶縁された金属板を使用しているので、
熱放散性が良好となり、この結果、供給電力を大きくし
ての高輝度点灯が行えるとともに、薄形化を促進するこ
とができる．（４）、又、ＬＥＤチップを挿入する透孔
は上部を広く、下部を狭くしてテーパー状に形成されて
いるので、このテーパー面に形成した反射鏡の利用によ
りＬＥＤチップの発光を放射状に発光させての表示が可
能となり、発光効率を高めることができる．
（５）、更に、前記反射鏡の部分を導電させるか、否か
によってＬＥＤチンブの点灯回路方式を直列又は並列と
、任意に選択することができるので、固体発光表示装置
の使用範囲を拡大させるとともに、その生産性を向上さ
せ、廉価に提供できる利点がある．(2) The through hole for attaching the LED chip is drilled in the insulating plate with the minimum necessary size.
It is possible to increase the mounting density of LED chips. (3) Furthermore, even if the mounting density of LED chips is increased, the present invention uses an electrically insulated metal plate instead of the conventional insulating material as the member constituting the lower electrode.
Heat dissipation is improved, and as a result, high-intensity lighting can be achieved by increasing the power supply, and the design can be made thinner. (4) Also, since the through hole into which the LED chip is inserted is tapered with a wide upper part and a narrower lower part, the light emitted from the LED chip can be radiated by using a reflecting mirror formed on this tapered surface. This enables display by emitting light, increasing luminous efficiency. (5) Furthermore, the lighting circuit system of the LED chimney can be arbitrarily selected as series or parallel depending on whether or not the reflecting mirror portion is conductive, thereby expanding the range of use of the solid-state light emitting display device. At the same time, it has the advantage of improving productivity and being able to provide it at a low price.
第１図、第２図は本発明の固体発光表示装置の異なる実
施例を示す縦断面図、第３図はＬＥＤチップの並列点灯
回路、第４図はＬＥＤチップの直列点灯回路、第５図は
ＬＥＤチップのマトリックス点灯回路、第６図は第１図
及び第２図の固体表示装置を製造するための手順を示す
説明図、第７図はフイルム状接着シートの構造図、第８
図、第９図は従来技術の説明図である。
４・下部電極 ｌ４・透孔
ｌ５・ＬＥＤチップ １８・メシキレジス］・ｌ９・
反射鏡 ２０・上部電極1 and 2 are vertical cross-sectional views showing different embodiments of the solid-state light emitting display device of the present invention, FIG. 3 is a parallel lighting circuit of LED chips, FIG. 4 is a series lighting circuit of LED chips, and FIG. 6 is an explanatory diagram showing the procedure for manufacturing the solid-state display device of FIGS. 1 and 2, FIG. 7 is a structural diagram of a film-like adhesive sheet, and FIG.
9 are explanatory diagrams of the prior art. 4. Lower electrode l4, through hole l5, LED chip 18, mesh resist], l9.
Reflector 20/Top electrode
Claims (2)
設けて下部電極を形成し、この下部電極上には、絶縁プ
レートに上部を拡く、下部を狭くしてテーパー状となし
た透孔を所定数穿孔してこの透孔全周面に湿式又は乾式
メッキを施して反射鏡を形成してなる前記絶縁プレート
を、透孔と対応する部分に接着層を備えて接着固定し、
前記透孔にＬＥＤチップを挿着し、反射鏡上部にはメッ
キレジストを介して上部電極を取付けたことを特徴とす
る固体発光表示装置。(1) A lower electrode is formed by providing a conductive part on the upper part of the metal plate through an insulating layer, and on this lower electrode, the insulating plate has a tapered shape with the upper part widened and the lower part narrowed. The insulating plate is formed by drilling a predetermined number of through holes and applying wet or dry plating to the entire circumferential surface of the through holes to form a reflective mirror, and adhesively fixing the insulating plate with an adhesive layer provided at a portion corresponding to the through holes,
A solid-state light emitting display device, characterized in that an LED chip is inserted into the through hole, and an upper electrode is attached to the upper part of the reflecting mirror via a plating resist.
とを特徴とする請求項１記載の固体発光表示装置。(2) The solid-state light emitting display device according to claim 1, wherein a conductive plating layer is formed on the portion of the reflecting mirror.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63282162A JPH02229477A (en) | 1988-11-08 | 1988-11-08 | Solid-state light-emitting display |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63282162A JPH02229477A (en) | 1988-11-08 | 1988-11-08 | Solid-state light-emitting display |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02229477A true JPH02229477A (en) | 1990-09-12 |
Family
ID=17648908
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63282162A Pending JPH02229477A (en) | 1988-11-08 | 1988-11-08 | Solid-state light-emitting display |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02229477A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5298768A (en) * | 1992-02-14 | 1994-03-29 | Sharp Kabushiki Kaisha | Leadless chip-type light emitting element |
| WO2002084750A1 (en) * | 2001-04-12 | 2002-10-24 | Matsushita Electric Works, Ltd. | Light source device using led, and method of producing same |
| JP2006093711A (en) * | 2004-09-24 | 2006-04-06 | Shogen Koden Kofun Yugenkoshi | Semiconductor light-emitting element assembly |
| JP2009164210A (en) * | 2007-12-28 | 2009-07-23 | Hitachi Ltd | Mounting substrate, and led light source device with mounting substrate |
| JPWO2019160062A1 (en) * | 2018-02-16 | 2021-02-12 | 京セラ株式会社 | Multi-cavity element storage package and multi-capture optical semiconductor device |
-
1988
- 1988-11-08 JP JP63282162A patent/JPH02229477A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5298768A (en) * | 1992-02-14 | 1994-03-29 | Sharp Kabushiki Kaisha | Leadless chip-type light emitting element |
| WO2002084750A1 (en) * | 2001-04-12 | 2002-10-24 | Matsushita Electric Works, Ltd. | Light source device using led, and method of producing same |
| US6874910B2 (en) | 2001-04-12 | 2005-04-05 | Matsushita Electric Works, Ltd. | Light source device using LED, and method of producing same |
| JP2006093711A (en) * | 2004-09-24 | 2006-04-06 | Shogen Koden Kofun Yugenkoshi | Semiconductor light-emitting element assembly |
| JP2009164210A (en) * | 2007-12-28 | 2009-07-23 | Hitachi Ltd | Mounting substrate, and led light source device with mounting substrate |
| JPWO2019160062A1 (en) * | 2018-02-16 | 2021-02-12 | 京セラ株式会社 | Multi-cavity element storage package and multi-capture optical semiconductor device |
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