JPH02223922A - Formation of spacer for liquid crystal gap - Google Patents
Formation of spacer for liquid crystal gapInfo
- Publication number
- JPH02223922A JPH02223922A JP1042990A JP4299089A JPH02223922A JP H02223922 A JPH02223922 A JP H02223922A JP 1042990 A JP1042990 A JP 1042990A JP 4299089 A JP4299089 A JP 4299089A JP H02223922 A JPH02223922 A JP H02223922A
- Authority
- JP
- Japan
- Prior art keywords
- liquid crystal
- spacer
- crystal gap
- glass substrate
- insulating film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 43
- 125000006850 spacer group Chemical group 0.000 title claims abstract description 22
- 230000015572 biosynthetic process Effects 0.000 title 1
- 238000000034 method Methods 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 239000011521 glass Substances 0.000 claims abstract description 15
- 239000004642 Polyimide Substances 0.000 claims abstract description 13
- 229920001721 polyimide Polymers 0.000 claims abstract description 13
- 238000005530 etching Methods 0.000 claims abstract description 5
- 239000011159 matrix material Substances 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 2
- 230000001678 irradiating effect Effects 0.000 claims 1
- 238000007789 sealing Methods 0.000 abstract 1
- 229910021332 silicide Inorganic materials 0.000 description 6
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 6
- 239000011324 bead Substances 0.000 description 3
- 239000000835 fiber Substances 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 230000002542 deteriorative effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005429 filling process Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1339—Gaskets; Spacers; Sealing of cells
- G02F1/13394—Gaskets; Spacers; Sealing of cells spacers regularly patterned on the cell subtrate, e.g. walls, pillars
Landscapes
- Physics & Mathematics (AREA)
- Liquid Crystal (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はアクティブマトリクス液晶ディスプレイに係り
、特に大面積液晶ディスプレイの液晶ギャップ用スペー
サの形成方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to active matrix liquid crystal displays, and more particularly to a method of forming a spacer for a liquid crystal gap in a large area liquid crystal display.
アクティブマトリクス液晶ディスプレイの構成は例えば
日経マイクロデバイス１９８５年１１月号Ｐ５１〜に記
されている。ここでｔ記構酸を第２図に示す。第２図に
おいて１は偏光フィルタ、２はガラス基板、３はカラー
フィルタ、４はＩＴＯ５５はＴＦＴ部、６は配向膜、７
は液晶である。ところで上記構成において従来は液晶ギ
ャップを保つためにファイバ或はビーズを配向膜」二に
分散させて、それ自身を液晶ギャップ用スペーサとして
いた。The structure of an active matrix liquid crystal display is described, for example, in Nikkei Microdevice, November 1985 issue, page 51. Here, the structural acid shown in FIG. 2 is shown. In FIG. 2, 1 is a polarizing filter, 2 is a glass substrate, 3 is a color filter, 4 is an ITO55 TFT section, 6 is an alignment film, and 7 is a polarizing filter.
is a liquid crystal. By the way, in the above structure, conventionally, in order to maintain the liquid crystal gap, fibers or beads were dispersed in the alignment film 2, and the alignment film itself was used as a spacer for the liquid crystal gap.
上記従来技術を大面積液晶ディスプレイに適用した場合
、１）ファイバ或はビーズが大面積上に均一に分散され
ないと面内の液晶ギャップ力を不均一になり、この結果
表示品質が低下する ２）ファイバ或はビーズが有効画
像部上に分散された場合、表示欠陥と見なされる等の問
題がある。When the above conventional technology is applied to a large area liquid crystal display, 1) If the fibers or beads are not uniformly distributed over a large area, the in-plane liquid crystal gap force becomes non-uniform, resulting in a decrease in display quality. 2) If the fibers or beads are dispersed over a valid image area, this may be considered a display defect.
本発明の目的は大面積液晶ディスプレイにおいて表示品
質を低化させずに且つ容易に液晶ギャップ用スペーサを
形成することにある。An object of the present invention is to easily form a spacer for a liquid crystal gap in a large-area liquid crystal display without deteriorating display quality.
上記目的は走査電極及び信号電極が不透明な電極より成
るアクティブマトリクス液晶ディスプレイにおいて、Ｔ
ＦＴが形成されているガラス基板上に絶縁膜、レジスト
を順次堆積した後、ガラス基板側から光を照射し、その
後、絶縁膜のエツチング工程を行い、光照射されない部
分の絶縁膜を液晶ギャップ用スペーサとして用いること
により達成される。The above purpose is to provide a T
After sequentially depositing an insulating film and a resist on the glass substrate on which the FT is formed, light is irradiated from the glass substrate side, then an etching process is performed on the insulating film, and the parts of the insulating film that are not irradiated with light are used for the liquid crystal gap. This is achieved by using it as a spacer.
上記方法だと液晶ギャップ用スペーサは必ず走査電極及
び信号電極上に形成されるので液晶を封入した際の液晶
ギャップの不均一性はない。又、上記方法だとスペーサ
が有効画像部上に位置することはない。よって、表示品
質が低化することはない。In the above method, since the liquid crystal gap spacer is always formed on the scanning electrode and the signal electrode, there is no non-uniformity in the liquid crystal gap when the liquid crystal is sealed. Furthermore, with the above method, the spacer will not be located on the effective image area. Therefore, display quality does not deteriorate.
以下、本発明の一実施例を第１図により説明する。 An embodiment of the present invention will be described below with reference to FIG.
第１図は本発明の一実施例のＴＦＴが形成されているガ
ラス基板の平面図である。図中において。FIG. 1 is a plan view of a glass substrate on which a TFT according to an embodiment of the present invention is formed. In the figure.
１０はｐｔシリサイド、１工はＣｒ、１２はＩＴｏ。10 is PT silicide, 1 is Cr, and 12 is ITo.
１３は真性多結晶シリコン膜である。又、斜線部には液
晶ギャップ用スペーサとしてポリイミド２４が堆積され
ている。第１図の構成だとポリイミド２４は必ずＣｒ１
ｌ及びｐｔシリサイド１０上に形成されるので液晶を封
入した際の液晶ギャップの不均一性はない、又、第１図
の構成だとポリイミド２４が有効画像部上即ちＩＴＯ１
２上に位置することはない。よって表示品質が低下する
ことはない。13 is an intrinsic polycrystalline silicon film. Further, polyimide 24 is deposited in the shaded area as a spacer for a liquid crystal gap. In the configuration shown in Figure 1, polyimide 24 is always Cr1.
Since it is formed on the l and pt silicide 10, there is no non-uniformity in the liquid crystal gap when the liquid crystal is sealed.In addition, in the configuration shown in FIG.
It is never located above 2. Therefore, display quality does not deteriorate.
第３図は本発明の一プロセス手順を示したものである。FIG. 3 shows one process procedure of the present invention.
即ち、ａ）ガラス基板２０上に不透明な走査電極が含ま
れているＴＦＴ部２１、不透明な走査電極或は不透明な
信号電極２２を形成した後、配向膜２３を堆積しラビン
グ工程後ポリイミド２４、レジスト２５を順次堆積し、
その後ガラス基板側から光を照射する、ｂ）その後ポリ
イミド２４のエツチング工程を行い光が照射されない部
分のポリイミド２４を液晶ギャップ用スペーサとして用
いる。That is, a) after forming a TFT section 21 including an opaque scanning electrode, an opaque scanning electrode or an opaque signal electrode 22 on a glass substrate 20, an alignment film 23 is deposited, and after a rubbing process, a polyimide 24, Resist 25 is sequentially deposited,
After that, light is irradiated from the glass substrate side. b) Thereafter, an etching process is performed on the polyimide 24, and the portion of the polyimide 24 that is not irradiated with light is used as a spacer for a liquid crystal gap.
第４図は本発明の一実施例のＴＦＴが形成されているガ
ラス基板の平面図である０図中において１０はｐｔシリ
サイド、１１はＣｒ、１２はＩＴｏ。FIG. 4 is a plan view of a glass substrate on which a TFT according to an embodiment of the present invention is formed. In FIG. 4, 10 is PT silicide, 11 is Cr, and 12 is ITo.
１３は真性多結晶シリコン膜である。又、斜線部には液
晶ギャップ用スペーサとしてポリイミド２４が堆積され
ている。第３図の構成だとポリイミド２４は必ずＣｒ１
ｌ及びｐｔシリサイド１０上に形成されるので液晶を封
入した際の液晶ギャップの不均一性はない。又、信号電
極となるＰｔシリサイド１１をＩＴＯ１２で結合してい
るためにＩＴＯ１２上にはポリイミド２４は堆積されな
い、このことにより液晶封入工程時の障害物が減少する
ので液晶封入は容易になる。13 is an intrinsic polycrystalline silicon film. Further, polyimide 24 is deposited in the shaded area as a spacer for a liquid crystal gap. In the configuration shown in Figure 3, polyimide 24 is always Cr1.
Since it is formed on the l and pt silicide 10, there is no non-uniformity in the liquid crystal gap when liquid crystal is sealed. Furthermore, since the Pt silicide 11, which becomes the signal electrode, is bonded with ITO 12, the polyimide 24 is not deposited on the ITO 12. This reduces obstacles during the liquid crystal filling process, making liquid crystal filling easier.
本発明によれば大面積アクティブマトリクス液晶ディス
プレイの液晶ギャップ用スペーサが容易に且つ表示品質
を低化させずに形成できるので液晶ディスプレイの１）
低コスト化、２）高スループット化、３）高表示品質化
等の利点がある。According to the present invention, a spacer for a liquid crystal gap in a large-area active matrix liquid crystal display can be easily formed without deteriorating display quality.
It has advantages such as lower cost, 2) higher throughput, and 3) higher display quality.
【図面の簡単な説明】
第１図および第４図は本発明の一実施例のＴＦＴが形成
されている基板の平面図、第２図はアクティブマトリク
ス液晶ディスプレイの断面図、第３図は本発明の一実施
例のプロセス手順を示す図である。
１・・・偏光フィルタ、２・・・ガラス基板、３・・・
カラーフィルタ、４・・・ＩＴＯ１５・・・ＴＦＴ部、
６・・・配向股、７・・・液晶、１０・・ＰＬシリサイ
ド、１］・・・Ｃｒ、１−２・・・ＩＴＯ１］３・・・
真性多結晶シリコン膜、２０・・・ガラス基板、２］・
・・不透明な走査電極が含まれているＴＦＴ部、２２・
・・不透明な走査電極或は不透明な信号電極、２３・・
・配向膜、２４・・・ポリイミド、２５・・・レジス１
へ。
代理人 弁理士 小川勝男−°Ｎ、
第１図
宅３図
（ＣＬ）
四
第２図
＜ｅ、＞
午
２λ
Ｚλ[BRIEF DESCRIPTION OF THE DRAWINGS] FIGS. 1 and 4 are plan views of a substrate on which a TFT according to an embodiment of the present invention is formed, FIG. 2 is a cross-sectional view of an active matrix liquid crystal display, and FIG. FIG. 3 is a diagram showing a process procedure of an embodiment of the invention. 1... Polarizing filter, 2... Glass substrate, 3...
Color filter, 4...ITO15...TFT section,
6... Orientation crotch, 7... Liquid crystal, 10... PL silicide, 1]... Cr, 1-2... ITO1] 3...
Intrinsic polycrystalline silicon film, 20... glass substrate, 2]・
...TFT section containing opaque scanning electrodes, 22.
...opaque scanning electrode or opaque signal electrode, 23...
・Alignment film, 24... polyimide, 25... resist 1
fart. Agent Patent Attorney Katsuo Ogawa-°N, Fig. 1 House Fig. 3 (CL) Fig. 4 Fig. 2 <e,> No. 2λ Zλ
Claims (1)
ティブマトリクス液晶ディスプレイの液晶ギャップ用ス
ペーサの形成方法において、ＴＦＴが形成されているガ
ラス基板上に絶縁膜、レジストを順次堆積した後、ガラ
ス基板側から光を照射し、その後、絶縁膜のエッチング
工程を行い、光照射されない部分の絶縁膜を液晶ギャッ
プ用スペーサとして用いることを特徴とする液晶ギャッ
プ用スペーサの形成方法。 ２、走査電極及び信号電極の少なくとも一部が透明電極
より成るアクティブマトリクス液晶ディスプレイの液晶
ギャップ用スペーサの形成方法において、ＴＦＴが形成
されているガラス基板上に絶縁膜、レジストを順次堆積
した後、ガラス基板側から光を照射し、その後、絶縁膜
のエッチング工程を行い、光照射されない部分の絶縁膜
を液晶ギャップ用スペーサとして用いることを特徴とす
る液晶ギャップ用スペーサの形成方法。 ３、請求項１又は２記載の絶縁膜はポリイミド或はレジ
ストであることを特徴とする液晶ギャップ用スペーサの
形成方法。[Claims] 1. In a method for forming a spacer for a liquid crystal gap in an active matrix liquid crystal display in which scanning electrodes and signal electrodes are opaque electrodes, an insulating film and a resist are sequentially deposited on a glass substrate on which a TFT is formed. After that, light is irradiated from the glass substrate side, and then an etching process is performed on the insulating film, and the part of the insulating film that is not irradiated with light is used as a spacer for a liquid crystal gap. 2. In a method for forming a spacer for a liquid crystal gap in an active matrix liquid crystal display in which at least a portion of the scanning electrode and the signal electrode are transparent electrodes, after sequentially depositing an insulating film and a resist on a glass substrate on which a TFT is formed, A method for forming a spacer for a liquid crystal gap, which comprises irradiating light from the glass substrate side, then performing an etching process on the insulating film, and using the portion of the insulating film that is not irradiated with light as a spacer for the liquid crystal gap. 3. A method for forming a spacer for a liquid crystal gap, wherein the insulating film according to claim 1 or 2 is made of polyimide or resist.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1042990A JPH02223922A (en) | 1989-02-27 | 1989-02-27 | Formation of spacer for liquid crystal gap |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1042990A JPH02223922A (en) | 1989-02-27 | 1989-02-27 | Formation of spacer for liquid crystal gap |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02223922A true JPH02223922A (en) | 1990-09-06 |
Family
ID=12651469
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1042990A Pending JPH02223922A (en) | 1989-02-27 | 1989-02-27 | Formation of spacer for liquid crystal gap |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02223922A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5710097A (en) * | 1996-06-27 | 1998-01-20 | Minnesota Mining And Manufacturing Company | Process and materials for imagewise placement of uniform spacers in flat panel displays |
| US5861932A (en) * | 1997-03-31 | 1999-01-19 | Denso Corporation | Liquid crystal cell and its manufacturing method |
| US6184959B1 (en) | 1997-10-24 | 2001-02-06 | Sharp Kabushiki Kaisha | Liquid crystal display device having alignment film that provides alignment upon irradiation and manufacturing method the same |
| US6245469B1 (en) | 1999-09-09 | 2001-06-12 | Canon Kabushiki Kaisha | Manufacturing method for color filter and liquid crystal element using color filter manufactured thereby |
| US6339461B1 (en) | 1999-09-09 | 2002-01-15 | Canon Kabushiki Kaisha | Method for forming spacers, manufacturing method for a color filter having the spacers, and liquid crystal element formed by using the manufacturing method |
| US6501527B1 (en) | 1999-07-29 | 2002-12-31 | Canon Kabushiki Kaisha | Liquid crystal elemental device, production process thereof and spacer-bearing substrate |
| US6933988B2 (en) * | 2001-03-08 | 2005-08-23 | Sharp Kabushiki Kaisha | Active matrix substrate and method for producing the same |
| JP2006323110A (en) * | 2005-05-18 | 2006-11-30 | Sharp Corp | Method for forming three-dimensional structure, method for forming spacer for liquid crystal display element using this forming method, transparent substrate with three-dimensional structure, and uv irradiation system |
| JP2011242506A (en) * | 2010-05-17 | 2011-12-01 | Sony Corp | Display device manufacturing method and display device |
-
1989
- 1989-02-27 JP JP1042990A patent/JPH02223922A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5710097A (en) * | 1996-06-27 | 1998-01-20 | Minnesota Mining And Manufacturing Company | Process and materials for imagewise placement of uniform spacers in flat panel displays |
| US5861932A (en) * | 1997-03-31 | 1999-01-19 | Denso Corporation | Liquid crystal cell and its manufacturing method |
| US6184959B1 (en) | 1997-10-24 | 2001-02-06 | Sharp Kabushiki Kaisha | Liquid crystal display device having alignment film that provides alignment upon irradiation and manufacturing method the same |
| US6501527B1 (en) | 1999-07-29 | 2002-12-31 | Canon Kabushiki Kaisha | Liquid crystal elemental device, production process thereof and spacer-bearing substrate |
| US6245469B1 (en) | 1999-09-09 | 2001-06-12 | Canon Kabushiki Kaisha | Manufacturing method for color filter and liquid crystal element using color filter manufactured thereby |
| US6339461B1 (en) | 1999-09-09 | 2002-01-15 | Canon Kabushiki Kaisha | Method for forming spacers, manufacturing method for a color filter having the spacers, and liquid crystal element formed by using the manufacturing method |
| US6933988B2 (en) * | 2001-03-08 | 2005-08-23 | Sharp Kabushiki Kaisha | Active matrix substrate and method for producing the same |
| JP2006323110A (en) * | 2005-05-18 | 2006-11-30 | Sharp Corp | Method for forming three-dimensional structure, method for forming spacer for liquid crystal display element using this forming method, transparent substrate with three-dimensional structure, and uv irradiation system |
| JP2011242506A (en) * | 2010-05-17 | 2011-12-01 | Sony Corp | Display device manufacturing method and display device |
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