JPH02223141A - Image display device and manufacture thereof - Google Patents
Image display device and manufacture thereofInfo
- Publication number
- JPH02223141A JPH02223141A JP1043761A JP4376189A JPH02223141A JP H02223141 A JPH02223141 A JP H02223141A JP 1043761 A JP1043761 A JP 1043761A JP 4376189 A JP4376189 A JP 4376189A JP H02223141 A JPH02223141 A JP H02223141A
- Authority
- JP
- Japan
- Prior art keywords
- display device
- image display
- electron source
- organic compound
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 150000002902 organometallic compounds Chemical class 0.000 claims abstract description 11
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000012298 atmosphere Substances 0.000 claims abstract description 10
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 10
- 239000010937 tungsten Substances 0.000 claims abstract description 10
- -1 tungsten fatty acid salt Chemical class 0.000 claims abstract description 8
- 239000007858 starting material Substances 0.000 claims abstract description 7
- 235000014113 dietary fatty acids Nutrition 0.000 claims abstract description 6
- 229930195729 fatty acid Natural products 0.000 claims abstract description 6
- 239000000194 fatty acid Substances 0.000 claims abstract description 6
- 150000002894 organic compounds Chemical class 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 239000011159 matrix material Substances 0.000 claims description 8
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 8
- 238000010304 firing Methods 0.000 claims description 7
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 229910052750 molybdenum Inorganic materials 0.000 claims description 5
- 239000011733 molybdenum Substances 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 4
- 229910052758 niobium Inorganic materials 0.000 claims description 4
- 239000010955 niobium Substances 0.000 claims description 4
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 4
- 229910052788 barium Inorganic materials 0.000 claims description 3
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052797 bismuth Inorganic materials 0.000 claims description 3
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 3
- 238000000354 decomposition reaction Methods 0.000 claims description 3
- 229910052703 rhodium Inorganic materials 0.000 claims description 3
- 239000010948 rhodium Substances 0.000 claims description 3
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- 229910052720 vanadium Inorganic materials 0.000 claims description 3
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 3
- ZSLUVFAKFWKJRC-IGMARMGPSA-N 232Th Chemical compound [232Th] ZSLUVFAKFWKJRC-IGMARMGPSA-N 0.000 claims description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 2
- 229910052776 Thorium Inorganic materials 0.000 claims description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 2
- 150000004703 alkoxides Chemical class 0.000 claims description 2
- 229910052787 antimony Inorganic materials 0.000 claims description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 2
- 229910052796 boron Inorganic materials 0.000 claims description 2
- 229910052792 caesium Inorganic materials 0.000 claims description 2
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 claims description 2
- 229910052791 calcium Inorganic materials 0.000 claims description 2
- 239000011575 calcium Substances 0.000 claims description 2
- 125000004432 carbon atom Chemical group C* 0.000 claims description 2
- 238000005530 etching Methods 0.000 claims description 2
- 229910052712 strontium Inorganic materials 0.000 claims description 2
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims description 2
- 229910052727 yttrium Inorganic materials 0.000 claims description 2
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 2
- 229910052726 zirconium Inorganic materials 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- 150000004665 fatty acids Chemical class 0.000 claims 1
- 229910052746 lanthanum Inorganic materials 0.000 claims 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims 1
- 150000003839 salts Chemical class 0.000 claims 1
- 229910052706 scandium Inorganic materials 0.000 claims 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 claims 1
- 239000010936 titanium Substances 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- 239000011521 glass Substances 0.000 abstract description 10
- 239000000463 material Substances 0.000 abstract description 4
- 230000005684 electric field Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 9
- 230000000694 effects Effects 0.000 description 6
- 239000010409 thin film Substances 0.000 description 5
- 239000000654 additive Substances 0.000 description 4
- 239000010406 cathode material Substances 0.000 description 4
- 230000000996 additive effect Effects 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 2
- 229910000599 Cr alloy Inorganic materials 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000000788 chromium alloy Substances 0.000 description 2
- RZVXOCDCIIFGGH-UHFFFAOYSA-N chromium gold Chemical compound [Cr].[Au] RZVXOCDCIIFGGH-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- FUZZWVXGSFPDMH-UHFFFAOYSA-M hexanoate Chemical compound CCCCCC([O-])=O FUZZWVXGSFPDMH-UHFFFAOYSA-M 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000007645 offset printing Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は電子源から発した電子により蛍光体を発光させ
ることを利用した画像表示装置およびその製造法に関す
る。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to an image display device that uses electrons emitted from an electron source to cause a phosphor to emit light, and a method for manufacturing the same.
従来の技術
従来から電子源を２次元に配列し、Ｘ−Ｙマトリックス
電極を用いて制御し画像表示する平面型の表示装置は数
多く報告されている。そのなかでも薄膜電界放出型冷陰
極を用いた平面型の表示装置が注目される。この平面型
の表示装置は第３図（ａ）（ｂ）に示すように基板表面
に１０６〜１０７個／ｃｍ２の高密度に形成したミクロ
ンサイズの薄膜電界放出型冷陰極を用いている。BACKGROUND OF THE INVENTION Many flat display devices have been reported in which electron sources are arranged two-dimensionally and controlled using X-Y matrix electrodes to display images. Among these, flat display devices using thin film field emission cold cathodes are attracting attention. As shown in FIGS. 3(a) and 3(b), this flat display device uses micron-sized thin film field emission type cold cathodes formed on the surface of the substrate at a high density of 10 6 to 10 7 pieces/cm 2 .
この冷陰極は図に示すように基板２１の表面にマトリッ
クス電極の一方のＸ電極２２を形成し、その表面に絶縁
層２３と毛一方のＹ電極２４を形成し、Ｘ−Ｙ電極の各
校点の部分のＹ電極に１゜５〜２．０μｍの微小な孔２
５をホトエツチング技術によって１０００個以上設け、
さらに、絶縁層２３をエツチングする。航して形成した
き板を回転させながらタングステン、モリブデンなどの
高融点金属を斜め蒸着して円錐状の冷陰極チップ２８を
形成する。冷陰極形成後、表面の不用金属層を除去して
薄膜電界放出型冷陰極電子源が作られる。このＸ−Ｙマ
トリックス電子源と蛍光体を塗布したフェースプレート
とを対向させて画像表示装置が構成される。この画像表
示装置は各画素に１０００個以上のもの微小電子源を有
しているために、個々の電子源は特性上のばらつきが有
っても全体として平均化された特性となり画面全体に渡
って比較的均一な明るさが得られ特徴を持っている。As shown in the figure, this cold cathode has one X electrode 22 of the matrix electrode formed on the surface of a substrate 21, an insulating layer 23 and one Y electrode 24 formed on the surface, and each of the X-Y electrodes. A minute hole 2 of 1°5 to 2.0 μm is made in the Y electrode at the point.
More than 1,000 pieces of 5 are created using photoetching technology,
Furthermore, the insulating layer 23 is etched. A conical cold cathode chip 28 is formed by obliquely vapor-depositing a high melting point metal such as tungsten or molybdenum while rotating the formed plate. After forming the cold cathode, the unnecessary metal layer on the surface is removed to create a thin film field emission type cold cathode electron source. An image display device is constructed by making this XY matrix electron source and a face plate coated with phosphor face each other. This image display device has more than 1000 microelectron sources in each pixel, so even if there are variations in the characteristics of the individual electron sources, the characteristics are averaged over the entire screen. It has the characteristic of providing relatively uniform brightness.
発明が解決しようとする課題
しかしながら、前記の画像表示装置は前述のようによい
特徴を持っているにも拘らず実用化に至っていない。そ
の理由の一つは製造工程が複雑でコストが高くなること
と必要な面積に−様な電界放出が他冷陰極が作れないこ
とである。Problems to be Solved by the Invention However, the above-mentioned image display device has not been put into practical use, although it has good features as described above. One of the reasons for this is that the manufacturing process is complicated and the cost is high, and the required area makes it impossible to create a cold cathode with such field emission.
また、他の理由は形成された冷陰極は真空蒸着法もしく
はスパッター法により形成されたものであり、高い電子
放出密度、電子放出の経時的安定性を得るための電極打
射の改質が困難で寿命が短く、動作が不安定となること
である。Another reason is that the formed cold cathode is formed by vacuum evaporation or sputtering, and it is difficult to modify the electrode bombardment in order to obtain high electron emission density and stability of electron emission over time. This results in short lifespan and unstable operation.
課題を解決するための手段
電子源を備えた背面基板と蛍光体を塗着したフェースプ
レートを対向させた画像表示装置において、電子源とし
て金属の有機化合物を出発原料とし、これの分解反応に
よって得られた電極層を用いる。Means for Solving the Problem In an image display device in which a back substrate equipped with an electron source and a face plate coated with a phosphor face each other, an organic compound of metal is used as the starting material as the electron source, and the organic compound obtained by the decomposition reaction of this is used as the electron source. The electrode layer is used.
作用
本発明によれば、基板上に金属の有機化合物を出発原料
、例えば、インキを印刷し分解焼成することによって基
板との密着性がよく、かつ、安定した電子源用電極層が
得られる。さらには、前記有機化合物中に電子源電極の
仕事関数を低下させるための金属の有機化合物を均一分
散させることにより、電子放出密度を高め安定した高い
輝度を得ることができ、かつ長寿命が得られる。According to the present invention, an electrode layer for an electron source that has good adhesion to the substrate and is stable can be obtained by printing a metal organic compound as a starting material, such as an ink, on a substrate and decomposing and baking it. Furthermore, by uniformly dispersing a metal organic compound for lowering the work function of the electron source electrode in the organic compound, it is possible to increase the electron emission density, obtain stable high brightness, and obtain a long life. It will be done.
実施例 以下に図面に従って本発明の具体的な実施例を示す。Example Specific embodiments of the present invention will be shown below according to the drawings.
（実施例１）
本発明の画像表示装置の断面の一部を第１図に示す。画
像表示装置はＸ−Ｙマトリックス電極の各交点に構成さ
れた電界放出電子源を備えた背面基板１と蛍光体を塗着
したフェースプレート２を対向させて構成する。(Example 1) FIG. 1 shows a part of a cross section of an image display device of the present invention. The image display device is constructed by opposing a back substrate 1 having field emission electron sources arranged at each intersection of X-Y matrix electrodes and a face plate 2 coated with phosphor.
ガラス基板上に金クロム合金等の金属層がらなる０、３
１１１１巾のストライブ状のＸアレー電極３を形成し、
ゲート電極（Ｙアレー電極）５と交差する部分に厚さ約
１μｍの酸化シリコン等の絶縁層４を被覆し、ホトエツ
チング技術により部分的にスルーホール６を設けた。次
に、タングステンの脂肪酸塩を含有してなるインキを基
板上に印刷し、不活性雰囲気中で焼成する事により厚さ
約０． ３μｍの電子源用電極層を形成し、ホトエツチ
ング技術によって同時にＸアレー電極３にスルーホール
６を通じて電気的に接してなる冷陰極７とゲート電極５
を形成した。冷陰極の尖端部は１画素当り約５００個形
成し、ゲート電極との間隔は１〜２μｍとした。0, 3 consisting of a metal layer such as gold chromium alloy on a glass substrate
Forming a stripe-shaped X array electrode 3 with a width of 1111,
The portion intersecting with the gate electrode (Y array electrode) 5 was covered with an insulating layer 4 made of silicon oxide or the like with a thickness of about 1 μm, and through holes 6 were formed partially by photo-etching. Next, an ink containing a tungsten fatty acid salt is printed on the substrate and baked in an inert atmosphere to a thickness of about 0.0mm. A cold cathode 7 and a gate electrode 5 are formed by forming a 3 μm electron source electrode layer and electrically contacting the X array electrode 3 through a through hole 6 using photoetching technology.
was formed. Approximately 500 cold cathode tips were formed for each pixel, and the distance from the gate electrode was 1 to 2 μm.
次に、こうして作製した基板全体をＳ［０２膜エツチン
グ液にデイツプさせて第１図に示す冷陰極尖端部の下部
に凹部１１を形成した。Next, the entire substrate thus prepared was dipped in an S[02 film etching solution to form a recess 11 below the cold cathode tip shown in FIG.
このようにして４８０＊６８０個のマトリックス電子源
を形成したガラス基板と厚さ０． ２μｍの透明電極８
上にＺｎＯ： Ｚｎ蛍光体９を塗布したフェースプレー
ト２とを０．３ｍｍの間隔を保って対向させ、周囲を低
融点ガラスフリットでシールし、真空排気して画面サイ
ズ１０インチの画像表示装置を作製した。A glass substrate with 480*680 matrix electron sources formed in this way and a thickness of 0. 2 μm transparent electrode 8
A face plate 2 coated with ZnO: Zn phosphor 9 on top was placed facing the face plate 2 with a distance of 0.3 mm, the surrounding area was sealed with a low melting point glass frit, and vacuum evacuated to form an image display device with a screen size of 10 inches. Created.
冷陰極（垂直走査電極）をアース電位とし、デート電極
（ビデオ信号変調電極）に１５０Ｖ印加すると、１画素
当り、約１０μＡの電子放出電流が得られた。蛍光体面
に５００Ｖ印加し、フィールド周波数８０Ｈｚで干準じ
駆動を行なうと約５０ｆＬの面輝度を得られ、画像表示
が出来た。When the cold cathode (vertical scanning electrode) was grounded and 150V was applied to the date electrode (video signal modulation electrode), an electron emission current of about 10 μA was obtained per pixel. When 500 V was applied to the phosphor surface and the field frequency was 80 Hz, a surface brightness of about 50 fL was obtained and an image could be displayed.
前記実施例において、Ｘアレー電極を形成する金属は金
クロム合金に限られるものではなく、ニッケル、アルミ
ニウム合金、等のガラス基板との密着性がよく、非抵抗
の低い金属であればよい。In the above embodiments, the metal forming the X array electrode is not limited to gold chromium alloy, but may be any metal such as nickel, aluminum alloy, etc., which has good adhesion to the glass substrate and has low non-resistance.
絶縁層としては５ｉ０２膜に限られるものではなく、Ｓ
Ｉ ＯＮ Ｓ ｉＮＮ Ｂ ＮＮ Ｓ Ｉ
Ｂ系ガラス、５ｉ−Ｂ−Ｐｂ系ガラス等の絶縁性のよい
材料であればよい。The insulating layer is not limited to 5i02 film, but also S
I ON S iNN B NN S I
Any material with good insulation properties such as B-based glass or 5i-B-Pb-based glass may be used.
また、冷陰極としてはタングステンのほかに、モリブデ
ン、ニオブ、タンタルのを様化合物の分解焼成膜が利用
できた。In addition to tungsten, decomposed and fired films of molybdenum, niobium, and tantalum-like compounds could be used as the cold cathode.
（実施例２）
実施例１において、冷陰極を形成する原材料として、陰
極材料であるタングステンの有機化合物ニ成膜助剤とし
てロジウム（０，１−５％）、ビスマス（０，０５−１
％）、バナジウム（０，０５−２％）１７）脂肪酸塩を
添加し、酢酸ブチルの有機溶剤に溶解さ−せ、ビイクル
と共に均一に混合させたインキを調整し、スクリーン印
刷法を用いて印刷し、不活性雰囲気中で焼成する事によ
り厚さ約０． ３μｍの電子源用電極層を形成した。以
上のようにして形成した電極層はクツラフの発生も少な
く均一な膜で、かつ、ガラス基板に対して付着力の高い
ものであった。また、実施例１と同様に画像表示装置を
作製し、駆動した場合、より安定した発光が可能であっ
た。(Example 2) In Example 1, rhodium (0.1-5%) and bismuth (0.05-1%) were used as raw materials for forming the cold cathode, and as film-forming aids for tungsten, which is the cathode material.
%), vanadium (0.05-2%) 17) Add fatty acid salt, dissolve it in an organic solvent of butyl acetate, and mix uniformly with a vehicle to prepare an ink, and print using the screen printing method. By firing in an inert atmosphere, the thickness is reduced to approximately 0. A 3 μm electron source electrode layer was formed. The electrode layer formed as described above was a uniform film with little generation of scratches, and had high adhesion to the glass substrate. Further, when an image display device was manufactured and driven in the same manner as in Example 1, more stable light emission was possible.
成膜助剤としては前記化合物の他に、硼素、鉛、アンチ
モンの有機化合物も同様の効果が確認された。また、単
体の添加よりは、２，３種類の混合物が好ましかった。In addition to the above-mentioned compounds, organic compounds of boron, lead, and antimony were also used as film-forming aids, and similar effects were confirmed. Moreover, a mixture of two or three types was preferable to addition of a single substance.
この成膜助剤の効果としては、焼成時における陰極材料
のグレイン成長を抑制し、かつ、基板との結合力を向上
させるものと思われ冷陰極としてはタングステンのほか
に、モリブデン、ニオブ、タンタルの有機化合物の分解
焼成膜にも同様の効果があった。The effect of this film-forming aid is to suppress the grain growth of the cathode material during firing and to improve the bonding strength with the substrate.In addition to tungsten, molybdenum, niobium, tantalum, and Similar effects were found in the decomposed and fired films of organic compounds.
（実施例３）
実施例１において、冷陰極を形成する原材料として、陰
極材料であるタングステンの有機化合物に成膜助剤とし
てロジウム（０，１−５％）、ビスマス（０，０５−１
％）、バナジウム（０，０５−２％）ノ脂肪酸塩を添加
し、さらに、第２の添加剤として、バリウム（０゜５−
５％）の有機化合物を添加し、酢酸ブチルの有機溶剤に
溶解させ、ビイクルと共に均一に混合させたインキを調
整し、スクリーン印刷法を用いて印刷し、不活性雰囲気
中で焼成する事により厚さ約０、 ３μｍの電子源用電
極層を形成した。(Example 3) In Example 1, as a raw material for forming a cold cathode, rhodium (0.1-5%) and bismuth (0.05-1%) were added as film-forming aids to an organic compound of tungsten, which is a cathode material.
%), vanadium (0.05-2%) fatty acid salt, and barium (0.5-2%) as a second additive.
5%) of an organic compound is added, dissolved in an organic solvent of butyl acetate, mixed uniformly with a vehicle, the ink is prepared, printed using a screen printing method, and baked in an inert atmosphere. An electron source electrode layer having a thickness of approximately 0.3 μm was formed.
以上のようにして形成した電極層はクツラフの発生も少
なく均一な膜で、かつ、ガラス基板に対して付着力の高
いものであった。また、実施例１と同様に画像表示装置
を作製し、駆動した場合、発光が長時間に渡り安定して
おり、がっ、より発光効率が高く、約１００ｆＬの面輝
度を得た。The electrode layer formed as described above was a uniform film with little generation of scratches and had high adhesion to the glass substrate. Further, when an image display device was manufactured and driven in the same manner as in Example 1, the light emission was stable over a long period of time, and the luminous efficiency was higher, with a surface brightness of about 100 fL.
第２の添加剤としては、バリウムの有機化合物のほかに
、トリウム、セシウム、イツトリウム、ジルコニウム、
カルシウム、ストロンチウムの有機化合物が好ましかっ
た。In addition to the organic compound of barium, the second additives include thorium, cesium, yttrium, zirconium,
Organic compounds of calcium and strontium were preferred.
前記第２の添加剤の効果は、陰極材料であるタングステ
ン中に均一に分散することにより、冷陰極の仕事関数を
下げ、高い電子放出密度を達成し、かつ、冷陰極のイオ
ンスパッタリングによる劣化に際しても、常に一定の仕
事関数の低い電極表面を可能とするものと考えられる。The effect of the second additive is to lower the work function of the cold cathode by uniformly dispersing it in tungsten, which is the cathode material, to achieve a high electron emission density, and to prevent the cold cathode from deteriorating due to ion sputtering. It is also believed that the electrode surface always has a constant low work function.
冷陰極としてはタングステンのほかに、モリブデン、ニ
オブ、タンタルの有機化合物の分解焼成膜にも同様の効
果があった。In addition to tungsten, decomposed and fired films of organic compounds such as molybdenum, niobium, and tantalum as cold cathodes had similar effects.
（実施例４）
実施例−１〜３で使用した有機金属化合物は主に炭素数
が２０までの低級脂肪酸塩であったが、そのほかの化合
物として、アルコキシド、メルカプチド、多環式有機金
属化合物、その他のレジネート、ロジネート、の単体も
しくはいずれかの混合物を出発原料としても、はぼ同様
の電極膜が得られた。(Example 4) The organometallic compounds used in Examples 1 to 3 were mainly lower fatty acid salts having up to 20 carbon atoms, but other compounds include alkoxides, mercaptides, polycyclic organometallic compounds, Similar electrode films were obtained using other resinates and rosinates alone or in mixtures as starting materials.
焼成時の雰囲気としては、酸素濃度が高いと、電極膜の
焼成中に金属そのものも酸化され、所望の陰極が得られ
ない。また、酸素濃度を完全にゼロにした雰囲気中にお
いては、焼成時において、分解した有機化合物が完全に
ガス化せずに炭素として電極中に残存し、やはり、所望
の陰極が得らなかった。そこで、酸素濃度をコントロー
ルした不活性チッソガス雰囲気を用いて焼成を行なった
結果、酸素濃度として１１０００ｐｐ以下、 １０ｐ
ｐｍ以上の条件が好ましかった。If the atmosphere during firing has a high oxygen concentration, the metal itself will be oxidized during firing of the electrode film, making it impossible to obtain the desired cathode. Furthermore, in an atmosphere where the oxygen concentration was completely reduced to zero, during firing, the decomposed organic compound did not completely gasify and remained in the electrode as carbon, so that the desired cathode was still not obtained. Therefore, as a result of firing using an inert nitrogen gas atmosphere with controlled oxygen concentration, the oxygen concentration was 11,000 pp or less, 10 pp.
Conditions of pm or higher were preferable.
印刷に当り、スクリーン印刷法の他に、ロールコータ法
、スピナー法、オフセット印刷法が考えられるが、特に
限定されるものではない。In addition to the screen printing method, a roll coater method, a spinner method, and an offset printing method may be used for printing, but these are not particularly limited.
以上の実施例においては、画像表示装置として電子源が
Ｘ−Ｙマトリックス電極の各交点に構成され、同一平面
上に形成された冷陰極とゲート電極からなるプレーナー
型電界放出電子源を利用したものを例にして説明したが
、線材以外の薄膜を冷陰極として利用するものであれば
、電子源として金属の有機化合物を出発原料とし、これ
の分解反応によって得られた電極層を用いることもでき
、安定した発光が得られ長寿命化が達成できる。In the above embodiments, the image display device utilizes a planar field emission electron source, in which electron sources are configured at each intersection of X-Y matrix electrodes, and the cold cathode and gate electrode are formed on the same plane. This was explained using an example, but if a thin film other than a wire is used as a cold cathode, it is also possible to use a metal organic compound as the starting material and an electrode layer obtained by a decomposition reaction of this as the electron source. , stable light emission can be obtained and a long life can be achieved.
発明の効果
本発明によれば、基板上に金属の有機化合物を出発原料
とする材料でパターン形成し、分解焼成することによっ
て基板との密着性がよく、かつ、安定した電子源用電極
層が得られる、また、前記電極材料中に電子放出の仕事
関数を低下させるための金属添加剤を均一分散させるこ
とにより、電子放出密度を高め安定した高い輝度を得る
ことができ、かつ長寿命となる。Effects of the Invention According to the present invention, by forming a pattern on a substrate with a material using a metal organic compound as a starting material and decomposing and baking it, a stable electrode layer for an electron source with good adhesion to the substrate can be obtained. Furthermore, by uniformly dispersing a metal additive for lowering the work function of electron emission in the electrode material, it is possible to increase the electron emission density, obtain stable high brightness, and have a long life. .
さらに、従来の薄膜プロセスによる電子源の製造法に較
べ、生産性も高く低コストで連続的に大面積の画像表示
装置を得ることができる。Furthermore, compared to the conventional method of manufacturing an electron source using a thin film process, the productivity is high and it is possible to continuously obtain a large-area image display device at a low cost.
第１図は、本発明の一実施例における画像表示装置の部
分断面図、第２図は同装置における電子源部の要部平面
図、第３図（ａ）および（ｂ）は各々従来の電界放出型
マトリックス表示装置の斜視図および要部拡大斜視図で
ある。
工・・ガラス基板、２・・フェースプレート、３・・Ｘ
電極、４・・絶縁層、５・・ゲート電極、６・・スルー
ホール、７・・冷陰極、８・・透明電極、９・・蛍光体
、 １０・・２次電子。
代理人の氏名 弁理士 粟野重孝 ほか１名第
図
第
図
第
図FIG. 1 is a partial sectional view of an image display device according to an embodiment of the present invention, FIG. 2 is a plan view of a main part of an electron source in the same device, and FIGS. 3(a) and (b) are each a conventional image display device. FIG. 1 is a perspective view and an enlarged perspective view of a main part of a field emission matrix display device. Engineering...Glass substrate, 2...Face plate, 3...X
Electrode, 4. Insulating layer, 5. Gate electrode, 6. Through hole, 7. Cold cathode, 8. Transparent electrode, 9. Fluorescent material, 10. Secondary electron. Name of agent: Patent attorney Shigetaka Awano and one other person
Claims (9)
ースプレートを対向させ、前記電子源として金属の有機
化合物を出発原料とし、これの分解反応によって得られ
た電極層を用いたことを特徴とする画像表示装置。(1) A rear substrate equipped with an electron source and a face plate coated with a phosphor are placed opposite each other, and an electrode layer obtained by a decomposition reaction of a metal organic compound as a starting material is used as the electron source. An image display device characterized by:
チタンから選ばれた金属の有機化合物であること特徴と
する請求項１記載の画像表示装置。(2) Tungsten, molybdenum, niobium, tantalum,
The image display device according to claim 1, wherein the image display device is an organic compound of a metal selected from titanium.
、バナジウム、鉛、アンチモンの少なくとも１種の有機
化合物を成膜助剤として添加することを特徴とする請求
項１記載の画像表示装置。(3) The image display device according to claim 1, wherein at least one organic compound selected from rhodium, boron, bismuth, vanadium, lead, and antimony is added to the metal organic compound as a film-forming aid.
ウム、イットリウム、ジルコニウム、カルシウム、スト
ロンチウム、ランタン、スカンジュウムの少なくとも１
種の有機化合物を添加すること特徴とする請求項１記載
の画像表示装置。(4) The organic compound of metal is at least one of thorium, barium, cesium, yttrium, zirconium, calcium, strontium, lanthanum, and scandium.
2. The image display device according to claim 1, further comprising a seed organic compound added thereto.
の塩、アルコキシド、メルカプチド、多環式有機金属化
合物、その他のレジネート、ロジネートの単体もしくは
いずれかの混合物であることを特徴とする請求項２、３
または４記載の画像表示装置。(5) A claim characterized in that the organometallic compound is a salt of a lower fatty acid having up to 20 carbon atoms, an alkoxide, a mercaptide, a polycyclic organometallic compound, another resinate, or a mixture of any one of the resinates. 2, 3
or the image display device according to 4.
ースプレートを対向させ、前記電子源として、金属の有
機化合物を含有してなるインキを基板上に印刷し、焼成
することにより電子源用電極層を形成することを特徴と
する画像表示装置の製造法。(6) A back substrate equipped with an electron source and a face plate coated with a phosphor are placed opposite each other, and as the electron source, an ink containing a metal organic compound is printed on the substrate and baked. 1. A method for manufacturing an image display device, comprising forming a source electrode layer.
１０ｐｐｍ以上の不活性雰囲気であることを特徴とする
請求項８記載の画像表示装置の製造法。(7) The atmosphere during firing has an oxygen concentration of 1000 ppm or less,
9. The method for manufacturing an image display device according to claim 8, wherein the atmosphere is an inert atmosphere with a concentration of 10 ppm or more.
ースプレートを対向させ、前記電子源がＸ−Ｙマトリッ
クス電極の各交点に構成され、同一平面上に形成された
冷陰極とゲート電極からなるプレーナー型電界放出電子
源であることを特徴とする画像表示装置。(8) A rear substrate equipped with an electron source and a face plate coated with phosphor are opposed, and the electron source is configured at each intersection of the X-Y matrix electrode, and the cold cathode and gate are formed on the same plane. An image display device characterized in that it is a planar field emission electron source consisting of electrodes.
交差する部分に絶縁層を被覆し、金属の有機化合物を含
有してなるインキを基板上に印刷し、焼成する事により
電子源用電極層を形成し、エッチング法によって同時に
Ｘアレー電極に電気的に接してなる冷陰極とゲート電極
としてのＹアレー電極を形成することを特徴とする請求
項８記載の画像表示装置の製造法。(9) Form an X array electrode on a substrate, cover the part that intersects with the Y array electrode with an insulating layer, print an ink containing a metal organic compound on the substrate, and bake it to generate an electron source. 9. The method of manufacturing an image display device according to claim 8, characterized in that a cold cathode in electrical contact with the X array electrode and a Y array electrode as a gate electrode are simultaneously formed by an etching method. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1043761A JPH02223141A (en) | 1989-02-23 | 1989-02-23 | Image display device and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1043761A JPH02223141A (en) | 1989-02-23 | 1989-02-23 | Image display device and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02223141A true JPH02223141A (en) | 1990-09-05 |
Family
ID=12672742
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1043761A Pending JPH02223141A (en) | 1989-02-23 | 1989-02-23 | Image display device and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02223141A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0658924A1 (en) * | 1993-12-17 | 1995-06-21 | Canon Kabushiki Kaisha | Method of manufacturing electron-emitting device, electron source and image-forming apparatus |
| KR100259333B1 (en) * | 1991-03-13 | 2000-06-15 | 이데이 노부유끼 | Method for producing planar electron radiating device |
| US6221140B1 (en) | 1995-10-13 | 2001-04-24 | Canon Kabushiki Kaisha | Ink jet ink containing an organic metal complex |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58169841A (en) * | 1982-03-31 | 1983-10-06 | Okaya Denki Sangyo Kk | Cold cathode discharge tube and its manufacture |
-
1989
- 1989-02-23 JP JP1043761A patent/JPH02223141A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58169841A (en) * | 1982-03-31 | 1983-10-06 | Okaya Denki Sangyo Kk | Cold cathode discharge tube and its manufacture |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100259333B1 (en) * | 1991-03-13 | 2000-06-15 | 이데이 노부유끼 | Method for producing planar electron radiating device |
| EP0658924A1 (en) * | 1993-12-17 | 1995-06-21 | Canon Kabushiki Kaisha | Method of manufacturing electron-emitting device, electron source and image-forming apparatus |
| AU687926B2 (en) * | 1993-12-17 | 1998-03-05 | Canon Kabushiki Kaisha | Method of manufacturing electron-emitting device, electron source and image-forming apparatus |
| US6221140B1 (en) | 1995-10-13 | 2001-04-24 | Canon Kabushiki Kaisha | Ink jet ink containing an organic metal complex |
| US6429580B1 (en) | 1995-10-13 | 2002-08-06 | Canon Kabushiki Kaisha | Methods of manufacturing electron-emitting device, electron source and image forming apparatus |
| KR100350859B1 (en) * | 1995-10-13 | 2002-11-18 | 캐논 가부시끼가이샤 | Methods of Manufacturing Electron-Emitting Device, Electron Source and Image-Forming Apparatus |
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