JPH02213141A - Manufacture of film circuit element - Google Patents
Manufacture of film circuit elementInfo
- Publication number
- JPH02213141A JPH02213141A JP3449189A JP3449189A JPH02213141A JP H02213141 A JPH02213141 A JP H02213141A JP 3449189 A JP3449189 A JP 3449189A JP 3449189 A JP3449189 A JP 3449189A JP H02213141 A JPH02213141 A JP H02213141A
- Authority
- JP
- Japan
- Prior art keywords
- film
- silicon carbide
- semiconductor film
- semiconductor
- gate electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 34
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 33
- 239000004065 semiconductor Substances 0.000 claims abstract description 27
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000012535 impurity Substances 0.000 claims abstract description 10
- 229910000077 silane Inorganic materials 0.000 claims abstract description 8
- 239000010408 film Substances 0.000 claims description 58
- 239000010409 thin film Substances 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 9
- 229930195733 hydrocarbon Natural products 0.000 claims description 8
- 239000012495 reaction gas Substances 0.000 claims description 7
- 150000002430 hydrocarbons Chemical class 0.000 claims description 6
- 239000004215 Carbon black (E152) Substances 0.000 claims description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 3
- 239000000460 chlorine Substances 0.000 claims description 3
- 229910052801 chlorine Inorganic materials 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 claims description 3
- 239000012808 vapor phase Substances 0.000 claims description 3
- 239000007789 gas Substances 0.000 abstract description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 16
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 11
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 abstract description 8
- 239000000377 silicon dioxide Substances 0.000 abstract description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 4
- 239000013078 crystal Substances 0.000 abstract description 3
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Natural products C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 2
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
- 230000002349 favourable effect Effects 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- 239000010453 quartz Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000001947 vapour-phase growth Methods 0.000 description 5
- 125000004432 carbon atom Chemical group C* 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 125000001309 chloro group Chemical group Cl* 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 239000001294 propane Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- -1 methane hydrocarbons Chemical class 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000005977 Ethylene Substances 0.000 description 1
- 229910005091 Si3N Inorganic materials 0.000 description 1
- HICCMIMHFYBSJX-UHFFFAOYSA-N [SiH4].[Cl] Chemical compound [SiH4].[Cl] HICCMIMHFYBSJX-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002050 diffraction method Methods 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 125000004433 nitrogen atom Chemical group N* 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
- VEDJZFSRVVQBIL-UHFFFAOYSA-N trisilane Chemical compound [SiH3][SiH2][SiH3] VEDJZFSRVVQBIL-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【発明の詳細な説明】
（！！ｉ 要〕
炭化シリコン膜に形成される薄膜トランジスタ等のＩＩ
！’！回路素子の製造方法に関し、結晶状態が良好で、
高抵抗な炭化シリコンよりなる半導体膜にトランジスタ
等の素子を形成することを目的とし、
非塩素含有シランと炭化水素を含む反応ガスを使用し、
炭化シリコンからなる半導体膜を絶縁性下地層上に気相
成長する工程と、上記半導体膜に電極、不純物拡散領域
を形成する工程とを含み構成する。[Detailed description of the invention] (!!i essential) II of thin film transistors etc. formed on silicon carbide film
! '! Regarding the manufacturing method of circuit elements, the crystal state is good,
The purpose is to form elements such as transistors on semiconductor films made of high-resistance silicon carbide, using chlorine-free silane and reactive gases containing hydrocarbons.
The method includes a step of growing a semiconductor film made of silicon carbide in a vapor phase on an insulating base layer, and a step of forming an electrode and an impurity diffusion region in the semiconductor film.
本発明は、１１１１９回路素子の製造方法に関し、より
詳しくは、薄膜炭化シリコン膜に形成されるトランジス
タ、抵抗素子等のような薄膜回路素子の製造方法に関す
る。The present invention relates to a method of manufacturing a 11119 circuit element, and more particularly to a method of manufacturing a thin film circuit element such as a transistor, a resistor element, etc. formed on a thin silicon carbide film.
（従来の技術〕
薄膜トランジスタに適用される半導体層には、熱特性が
良好な炭化シリコン（ＳｉＣ）が使用されている。(Prior Art) Silicon carbide (SiC), which has good thermal properties, is used for a semiconductor layer applied to a thin film transistor.
ところで、炭化シリコンを気相成長させる際にはトリク
ロルシラン（ＳｉｌｌＣ１ｈ）にプロパン（Ｃ，１ｌ−
）を加えた反応ガスを使用するが、下地層を二酸化シリ
コン（Ｓｉｆｔ） ｆｆとする場合には、ｓ＋原子がＳ
ｉ０ｇ膜の上で核形成し難いために結晶性が悪く、しか
も膜厚を均一に形成することが難しいといった問題があ
った。By the way, when growing silicon carbide in a vapor phase, propane (C, 1l-) is added to trichlorosilane (SillC1h).
) is used, but when the underlying layer is silicon dioxide (Sift) ff, the s+ atoms are S
There were problems in that the crystallinity was poor because it was difficult to form nuclei on the i0g film, and it was difficult to form a film with a uniform thickness.
そこで、本出願人は、第４図に示すように５ｉＯ１膜４
０の表面に窒化（Ｓｉ３Ｎａ） ［４１を形成した後、
この上に５ｉＣＷＡ４２を形成し、これを半導体層とし
て使用するＩＩＩ）ランジスタを特開昭６３−００２３
８２号公報において提案した。この薄膜トランジスタは
、絶縁膜４３を介して５ｉＣｌ’Ｊ４２上にゲート電極
４４を形成するとともに、その両脇のＳｉＣ膜４膜歪２
純物元素を自己整合的に注入してソース４５、ドレイン
４６を形成したものである。Therefore, the applicant has developed a 5iO1 film 4 as shown in FIG.
After forming nitrided (Si3Na) [41] on the surface of 0,
5iCWA42 is formed on this and this is used as a semiconductor layer.
This was proposed in Publication No. 82. This thin film transistor has a gate electrode 44 formed on 5iCl'J42 via an insulating film 43, and a strained 2
A source 45 and a drain 46 are formed by implanting pure elements in a self-aligned manner.
このような構成によれば、５ｉＣ１１９４２の下地層と
なるＳｉ３Ｎ４１Ｍ１４１がその表面において不安定ボ
ンディングサイトを高密度に有しているため、５ｉＣＦ
Ｉ４２の付着性を良くしてその膜厚を平１１にすること
ができ、トランジスタの形成を容易にすることが可能に
なる。According to such a configuration, since Si3N41M141, which is the underlying layer of 5iC11942, has unstable bonding sites at a high density on its surface, 5iCF
The adhesion of I42 can be improved and its film thickness can be reduced to 11 mm, making it possible to easily form a transistor.
〔発明が解決しようとする課Ｂ］
しかし、Ｓ ｉ Ｉｔ ＣＡ ｓにＣ，）１．を加えた
反応ガスを使用してＳｉ３ＮイＦＩ４１の上にＳｉＣ膜
４膜歪２成する場合には、ＳｉＣ膜４膜歪２成する際に
加える高い温度によってＳ：ｓＮａ ＩＰ２．ｉ 図中
の窒素原子（Ｎ）がＳｉＣ膜４膜歪２部に混入してしま
うため、窒素がＳｉＣ膜４膜中２中ナーとして機能し、
その底部界面にｎ型のキャリアが生し、薄膜トランジス
タのソース４５・ドレイン４６間の抵抗を低くしてリー
ク電流が発生し易くなるといった不都合がある。[Problem B that the invention seeks to solve] However, S i It CA s C,) 1. When forming four strained SiC films on Si3N and FI41 using a reaction gas containing S:sNa IP2. i Since the nitrogen atoms (N) in the figure are mixed into the strained 2 parts of the 4 SiC films, nitrogen functions as a 2nd part of the 4 SiC films,
There is a disadvantage that n-type carriers are generated at the bottom interface, which lowers the resistance between the source 45 and drain 46 of the thin film transistor, making leakage current more likely to occur.
本発明はこのような問題に鑑みてなされたものであって
、結晶状態が良好で、高抵抗な炭化シリコン膜を備えた
Ｉ膜）ランジスタの製造方法を提供することを捷供する
ことを目的とする。The present invention has been made in view of these problems, and an object of the present invention is to provide a method for manufacturing an I-film transistor having a silicon carbide film with a good crystalline state and high resistance. do.
上記したｉ！ＩＩ！は、非塩素含有シランと炭化水素を
含む反応ガスを使用し、炭化シリコンからなる半導体膜
を絶縁性下地層にに気相成長する工程と、上記半導体膜
に電極、不純物拡散領域を形成する工程とを有すること
を特徴とする薄膜回路素子の製造方法により解決する。I mentioned above! II! The process involves vapor phase growth of a semiconductor film made of silicon carbide onto an insulating base layer using a reaction gas containing non-chlorine-containing silane and hydrocarbons, and a process of forming electrodes and impurity diffusion regions on the semiconductor film. The present invention is solved by a method for manufacturing a thin film circuit element characterized by having the following.
本発明において、炭化シリコンよりなる半導体膜６の成
膜過程においては、非塩素含有シランガスが熱分解し、
そのシリコン原子（Ｓｉ）が５ｉｎｓ等の絶縁性下地層
２に対して付着し易く、また、絶縁性下地層２に付着し
たシリコン原子が炭化水素ガスの炭素原子と結合して炭
化シリコンとなるため、炭化シリコンの堆積が容易とな
り、結晶性及び平坦性の良好な半導体Ｗｉ６が成長する
。In the present invention, in the process of forming the semiconductor film 6 made of silicon carbide, non-chlorine-containing silane gas is thermally decomposed,
The silicon atoms (Si) easily adhere to the insulating base layer 2 such as 5ins, and the silicon atoms attached to the insulating base layer 2 combine with carbon atoms of the hydrocarbon gas to form silicon carbide. , the deposition of silicon carbide becomes easy, and a semiconductor Wi6 with good crystallinity and flatness grows.
ところで、ＳｉＯ□等よりなる絶縁性下地層２に炭素原
子が付着する際には、塩素原子がその障害となると考え
られ、非塩素含有シランを用いて炭化シリコンからなる
半導体膜６を形成すると、半導体膜６の結晶性を良好に
するとともに、その導電性の上昇を抑制できる。By the way, when carbon atoms adhere to the insulating base layer 2 made of SiO□ or the like, chlorine atoms are considered to be a hindrance, and when the semiconductor film 6 made of silicon carbide is formed using chlorine-free silane, It is possible to improve the crystallinity of the semiconductor film 6 and to suppress an increase in its conductivity.
したがって、この半導体膜６にトランジスタを形成する
と、リーク電流の発生が防止され、０１１１０ＦＰ比を
高くすることができる。Therefore, if a transistor is formed in this semiconductor film 6, leakage current can be prevented from occurring and the 01110FP ratio can be increased.
（実施例） 以下に、本発明の実施例を図面に基づいて説明する。(Example) Embodiments of the present invention will be described below based on the drawings.
第１図は、本発明の一実施例の工程を示す断面図であっ
て、図中符号ｌは、シリコン等により形成した半導体基
板で、その表面には熱酸化、気相成長法等により成長し
た二酸化シリコン（Ｓｔａｇ）膜２が２，０００人程エ
フ厚さに形成されている。FIG. 1 is a cross-sectional view showing the steps of an embodiment of the present invention, in which reference numeral 1 indicates a semiconductor substrate made of silicon or the like, and the surface thereof is grown by thermal oxidation, vapor phase growth, etc. A silicon dioxide (Stag) film 2 is formed to a thickness of about 2,000 F.
そして、Ｓｉｎ！膜２の上に半導体膜を形成する場合に
は、第２図に例示するような気相成長装置を用い、石英
管３の周囲に巻回したワークコイル４に８にＨｚの高周
波電圧Ｖ、を印加して石英管３を９００℃の温度に誘導
加熱し、この状態で、ＳｉＯ□膜２を形成した半導体基
板ｌをグラファイトサセプタ５に取り付けてこれを石英
管３内に挿入する。And Sin! When forming a semiconductor film on the film 2, a vapor phase growth apparatus as illustrated in FIG. is applied to induction heat the quartz tube 3 to a temperature of 900° C., and in this state, the semiconductor substrate l on which the SiO□ film 2 is formed is attached to the graphite susceptor 5 and inserted into the quartz tube 3.
次に、石英管３の一端からモノシラン（Ｓｉｔ！ａ）ガ
ス及びプロパン（Ｃ３Ｈ１）ガスをそれぞれ２００ｃｃ
／ｗｉｎ 、４０ｃｃ／■ｉｎの流量で供給するととも
に、水素（Ｉ８）よりなるキャリアガスを７ｆ／ｓｉｎ
程度供給する一方、石英管３の他端から石英管３内部の
ガスを８．０００７！／ｓｉｎ程度の排気量で減圧して
内部圧力を２００Ｐａとする。なお、５１０□膜２に形
成しようとする半導体膜をｐ型化する場合には、反応ガ
スにＢＪｉのガスを加えることになる。Next, 200 cc of each of monosilane (Sit!a) gas and propane (C3H1) gas were supplied from one end of the quartz tube 3.
/win, is supplied at a flow rate of 40cc/■in, and a carrier gas consisting of hydrogen (I8) is supplied at a flow rate of 7f/sin.
At the same time, the gas inside the quartz tube 3 is supplied from the other end of the quartz tube 3 by 8.0007! The internal pressure is reduced to 200 Pa by evacuation amount of about /sin. Note that when converting the semiconductor film to be formed into the 510□ film 2 into a p-type, BJi gas is added to the reaction gas.
この条件により、炭化シリコン（ＳｉＣ） １１６を５
ｉｏｔＷＩ２の上に２００人／ｓｉｎの割合で成長させ
、これをｌＯ分程度継続して２，０００人程エフ膜厚に
形成する（第２図（ｂ））。Under these conditions, silicon carbide (SiC) 116 is
It is grown on iotWI2 at a rate of 200 layers/sin, and this is continued for about 10 minutes to form a film with a thickness of about 2,000 layers (FIG. 2(b)).
ところで、炭化シリコン膜６の成［４程においては、５
ｉＨｉガスが熱分解し、そのシリコン原子（Ｓｉ）が５
ｉＯｚｆｔ！２に対して膜成長を起こし易く、また、ｓ
ｉｏ、膜２に付着したシリコン原子がＣｄ１ｌガスの炭
素原子と結合して炭化シリコンとなるため、炭化シリコ
ン膜６の堆積が容易に進み、第２図（ｂ）に示すように
、結晶性及び平坦性の良好な膜が成長することになる。By the way, in the formation of silicon carbide film 6 [4],
iHi gas is thermally decomposed and its silicon atoms (Si) are
iOzft! s is more likely to cause film growth than s.
io, the silicon atoms attached to the film 2 combine with the carbon atoms of the Cd1l gas to form silicon carbide, so the deposition of the silicon carbide film 6 progresses easily, and as shown in FIG. 2(b), crystallinity and A film with good flatness will grow.
これは、５ＩＯ１膜２に炭素原子が付着する際に、付着
の障害となる塩素原子が反応ガスに含まれていないため
であると考えられる。This is considered to be because the reaction gas does not contain chlorine atoms, which would be a hindrance to carbon atoms adhering to the 5IO1 film 2.
炭化シリコン膜６は、結晶の（＋、、１．１）配向が成
膜面に対して垂直方向に形成され易いために、上記条件
により形成したＳｉＣ膜６のブラッグ角・回折強度特性
をＸ線回折法によって測定すると、第３図の実線で示す
特性が得られる。Since the silicon carbide film 6 is likely to be formed with the (+, 1.1) crystal orientation perpendicular to the film formation surface, the Bragg angle/diffraction intensity characteristics of the SiC film 6 formed under the above conditions are When measured by a line diffraction method, the characteristics shown by the solid line in FIG. 3 are obtained.
即ち、５ｉＨＣＪｌ！を使用して窒化膜上にＳｉＣＩＰ
ｌを形成した従来方法においては、破線で示すような膜
の特性が得られ、その半値幅が２θ−０，３８度となる
のに対し、Ｓｉｎ、ガスを使用した本実施例においては
、測定値の半値幅が２０−０．２７度となって結晶性が
向上したことが確認された（θはブラック角である）。That is, 5iHCJl! SiCIP on nitride film using
In the conventional method of forming L, film characteristics as shown by the broken line are obtained, and the half-width is 2θ-0.38 degrees, whereas in this example using Sin and gas, the measurement It was confirmed that the half width of the value was 20-0.27 degrees, and the crystallinity was improved (θ is Black's angle).
また、従来方法によりＳ ｔ Ｈ（Ｊ ｓを使用して窒
化膜上に形成した炭化シリコン膜の抵抗値を四探針法に
より実測してｎ型不純物の濃度を求めると、その濃度は
ｌＸｌ０１Ｔ〜ｌＸｌ０”個／ｄ程度となるが、５ｉ）
１．ガスを使用した本実施例によれば、１×１０”個／
ｃｊ程度となり、不純物による導電性が低下することが
確かめられた。In addition, when the resistance value of a silicon carbide film formed on a nitride film using the conventional method S t H (J s) is actually measured using the four-point probe method to determine the concentration of n-type impurities, the concentration is lXl01T ~ It is about lXl0” pieces/d, but 5i)
1. According to this embodiment using gas, 1×10” pieces/
It was confirmed that the conductivity was reduced by impurities.
以上のような工程により形成したＰ型炭化シリコンＩｇ
Ｉ６の表面にＳ ｉ Ｏ！ 膜７を形成し、この上にド
ープトポリシリコンＩｔ！８を気相成長法により堆積し
た後、このポリシリコン膜８をフォトリソグラフィ法に
よりパターニングしてゲート電極９を形成する。そして
、このゲート電極９をマスクとしてその両脇に形成した
ＳｉＯ□膜７の窓ＩＯから炭化シリコン膜６に窒素等の
不純物を自己整合的に注入してｎ°型頭域層１１、Ｉ２
を形成する（第２図（ｅ））。P-type silicon carbide Ig formed by the above steps
S i O! on the surface of I6! A film 7 is formed on which doped polysilicon It! After depositing a polysilicon film 8 by vapor phase growth, this polysilicon film 8 is patterned by photolithography to form a gate electrode 9. Using this gate electrode 9 as a mask, impurities such as nitrogen are injected into the silicon carbide film 6 from the windows IO of the SiO□ film 7 formed on both sides of the gate electrode 9 in a self-aligned manner.
(Fig. 2(e)).
この状態で、ｎ゛型領領域１１ｆｌｌｌ１２の上に電Ｊ
ｕｔ １３．１４を形成することにより薄膜トランジス
タが構成されることになる（第２図（ｄ））。In this state, a voltage J is placed on the n-type region 11flll12.
By forming ut 13.14, a thin film transistor is constructed (FIG. 2(d)).
以上の工程により形成した薄膜トランジスタによれば、
薄膜半導体となる炭化シリコン膜６は平り旦性、結晶性
が良く、しかも不純物濃度が低いために、リークを流が
発生せず、０Ｎ１０ＦＦ比の大きな特性が得られること
になる。According to the thin film transistor formed through the above steps,
The silicon carbide film 6, which serves as a thin film semiconductor, has good flatness and crystallinity, and has a low impurity concentration, so that no leakage or flow occurs, and a characteristic with a large 0N10FF ratio can be obtained.
ところで、上記した実施例は、炭化シリコン膜にトラン
ジスタを形成する場合について説明したが、第４図に示
すようにｓｔｏ、）Ｉ１２ｓ上に形成したｎ型の炭化シ
リコン１１！２０の両端にｎ゛型ｅＭ域２１．２２を形
成し、その上に電ｉ２３．２４を取付けることにより、
抵抗素子を形成することもできるし、その他、ダイオー
ド等の回路素子を炭化シリコン膜に形成することも可能
である。By the way, in the above-mentioned embodiment, a transistor is formed in a silicon carbide film, but as shown in FIG. By forming the type eM area 21.22 and attaching the electric i23.24 on it,
A resistive element can be formed, and other circuit elements such as diodes can also be formed in the silicon carbide film.
なお、上記した実施例では反応ガスとしてモノシランを
使用したが、ジシラン（ＳｉｚＨｉ） 、トリシラン（
Ｓｉｓ）Ｉｓ）等の非塩素系シランガスを使用する場合
にも、結晶性が向上する。また、上記した実施例では、
炭素系のガスとしてプロパン（ＣＪａ）を使用したが、
その他のメタン系炭化水素（Ｃ，、ｌｌ５−３ｚ）、エ
チレン系炭化水素ｃＣａＨ！ａ ）等の炭化水素とする
ことも可能である。Although monosilane was used as the reaction gas in the above examples, disilane (SizHi), trisilane (
Crystallinity is also improved when a non-chlorine silane gas such as Sis) Is) is used. Furthermore, in the above embodiment,
Propane (CJa) was used as the carbon-based gas, but
Other methane hydrocarbons (C,, ll5-3z), ethylene hydrocarbons cCaH! It is also possible to use hydrocarbons such as a).
以上述べたように本発明によれば、ＦＨＩ９１回路素子
を形成しようとする半導体膜を、塩素原子を含まないシ
ランガスと炭化水素ガスとを混合した反応ガスにより形
成したので、炭素原子がＳｉ０ｇ膜に付着する際の障害
となる元素がない状態でＳｉＣＷ１を形成することにな
り、半導体膜の結晶性を良好にするとともに、導電性を
低下することができ、リーク電流の発生を防止すること
が可能になる。As described above, according to the present invention, the semiconductor film on which the FHI91 circuit element is to be formed is formed using a reaction gas that is a mixture of silane gas and hydrocarbon gas that do not contain chlorine atoms. SiCW1 is formed in the absence of elements that would be a hindrance to adhesion, which improves the crystallinity of the semiconductor film and reduces conductivity, making it possible to prevent the occurrence of leakage current. become.
第１図は、本発明の一実施例の工程を示す断面図、
第２図は、本発明に使用する気相成長装置の一例を示す
断面図、
第３図は、本発明により形成したＳｉＣ膜の特性と、従
来方法により形成したＳｉＣＷＡの特性を示す特性図、
第４図は、本発明の他の実施例を示す素子の断面図、
第５図は、従来方法により形成した薄膜トランジスタの
一例を示す断面図である。
（符号の説明）
ｌ・・・半導体基板、
２・・・Ｓｒ鵠膜（絶縁性下地層）、
３・・・石英管、
４・・・ワークコイル、
５・・・グラファイトサセプタ、
６・・・ＳｉＣ膜〈半導体膜）、
７・・・ｓｉｏ□膜、
９・・・ゲート電極、
１１．１２・・・ｎ゛型領領域層
１３、Ｉ４・・・電極。FIG. 1 is a cross-sectional view showing the steps of an embodiment of the present invention. FIG. 2 is a cross-sectional view showing an example of a vapor phase growth apparatus used in the present invention. FIG. A characteristic diagram showing the characteristics of the film and the characteristics of SiCWA formed by the conventional method. FIG. 4 is a cross-sectional view of a device showing another embodiment of the present invention. FIG. 5 is an example of a thin film transistor formed by the conventional method. FIG. (Explanation of symbols) 1... Semiconductor substrate, 2... Sr oxide film (insulating base layer), 3... Quartz tube, 4... Work coil, 5... Graphite susceptor, 6... - SiC film (semiconductor film), 7... sio□ film, 9... gate electrode, 11.12... n-type region layer 13, I4... electrode.
Claims (2)
使用し、炭化シリコンからなる半導体膜を絶縁性下地層
上に気相成長する工程と、 上記半導体膜に電極、不純物拡散領域を形成する工程と
を有することを特徴とする薄膜回路素子の製造方法。(1) Step of vapor-phase growing a semiconductor film made of silicon carbide on an insulating base layer using a reaction gas containing non-chlorine-containing silane and hydrocarbon, and forming electrodes and impurity diffusion regions on the semiconductor film. A method for manufacturing a thin film circuit element, comprising the steps of:
する請求項１記載の薄膜回路素子の製造方法。(2) The method for manufacturing a thin film circuit element according to claim 1, wherein the circuit element is a thin film transistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3449189A JPH02213141A (en) | 1989-02-13 | 1989-02-13 | Manufacture of film circuit element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3449189A JPH02213141A (en) | 1989-02-13 | 1989-02-13 | Manufacture of film circuit element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02213141A true JPH02213141A (en) | 1990-08-24 |
Family
ID=12415715
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3449189A Pending JPH02213141A (en) | 1989-02-13 | 1989-02-13 | Manufacture of film circuit element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02213141A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5326991A (en) * | 1991-09-24 | 1994-07-05 | Rohm Co., Ltd. | Semiconductor device having silicon carbide grown layer on insulating layer and MOS device |
| US5501173A (en) * | 1993-10-18 | 1996-03-26 | Westinghouse Electric Corporation | Method for epitaxially growing α-silicon carbide on a-axis α-silicon carbide substrates |
| US5610411A (en) * | 1991-09-24 | 1997-03-11 | Rohm Co., Ltd. | Silicon carbide bipolar semiconductor device with birdsbeak isolation structure |
-
1989
- 1989-02-13 JP JP3449189A patent/JPH02213141A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5326991A (en) * | 1991-09-24 | 1994-07-05 | Rohm Co., Ltd. | Semiconductor device having silicon carbide grown layer on insulating layer and MOS device |
| US5518953A (en) * | 1991-09-24 | 1996-05-21 | Rohm Co., Ltd. | Method for manufacturing semiconductor device having grown layer on insulating layer |
| US5610411A (en) * | 1991-09-24 | 1997-03-11 | Rohm Co., Ltd. | Silicon carbide bipolar semiconductor device with birdsbeak isolation structure |
| US5501173A (en) * | 1993-10-18 | 1996-03-26 | Westinghouse Electric Corporation | Method for epitaxially growing α-silicon carbide on a-axis α-silicon carbide substrates |
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