JPH0220909A - Piezoelectric oscillator - Google Patents
Piezoelectric oscillatorInfo
- Publication number
- JPH0220909A JPH0220909A JP2067088A JP2067088A JPH0220909A JP H0220909 A JPH0220909 A JP H0220909A JP 2067088 A JP2067088 A JP 2067088A JP 2067088 A JP2067088 A JP 2067088A JP H0220909 A JPH0220909 A JP H0220909A
- Authority
- JP
- Japan
- Prior art keywords
- airtight container
- electric
- crystal
- electrical
- piezoelectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004020 conductor Substances 0.000 claims abstract description 20
- 230000010355 oscillation Effects 0.000 claims description 16
- 239000000615 nonconductor Substances 0.000 claims description 9
- 239000002907 paramagnetic material Substances 0.000 claims description 7
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 238000007789 sealing Methods 0.000 claims description 3
- 239000013078 crystal Substances 0.000 abstract description 75
- 239000003989 dielectric material Substances 0.000 abstract description 5
- 230000000694 effects Effects 0.000 description 12
- 239000000463 material Substances 0.000 description 9
- 230000035939 shock Effects 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 238000013016 damping Methods 0.000 description 4
- 238000004891 communication Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000013013 elastic material Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- BNPSSFBOAGDEEL-UHFFFAOYSA-N albuterol sulfate Chemical compound OS(O)(=O)=O.CC(C)(C)NCC(O)C1=CC=C(O)C(CO)=C1.CC(C)(C)NCC(O)C1=CC=C(O)C(CO)=C1 BNPSSFBOAGDEEL-UHFFFAOYSA-N 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 239000012858 resilient material Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
Landscapes
- Oscillators With Electromechanical Resonators (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は圧電発振器に係わり、特にマイクロッオニツク
雑音の発生を抑止し、さらにはマイクロッオニツク雑音
の発生を抑制しかつＥＭＩ（電磁波障肯）の影響を防止
した水晶発振器に関する。Detailed Description of the Invention (Industrial Application Field) The present invention relates to a piezoelectric oscillator, and particularly to a piezoelectric oscillator that suppresses the generation of micronic noise, and further suppresses the generation of micronic noise and suppresses EMI (electromagnetic wave). This invention relates to a crystal oscillator that prevents the effects of
（発明の背景）
水晶、リチウムナイオベイト、ＰＺＴなどの圧電振動子
を用いた圧電発振器のうちで、特に周波数安定性に優れ
た水晶発振器は、例えは、衛星通信機器などの基準周波
数を得るのに数多く使われている。(Background of the Invention) Among piezoelectric oscillators using piezoelectric vibrators such as crystal, lithium niobate, and PZT, crystal oscillators with particularly excellent frequency stability are useful for obtaining reference frequencies for satellite communication equipment, etc. It is used many times.
しかし、近年、データ通信が盛んになるにつれて、基準
周波数など重要な信号の高品質化が厳しく求められるよ
うになり、圧電発振器において、マイクロッオニラグ雑
音の発生を抑止し、ＥＭｔの影響を防止するよう強く要
請されていた。However, in recent years, as data communications have become more popular, there has been a strict demand for higher quality of important signals such as reference frequencies. was strongly requested to do so.
圧電発虎器のマイクロッオニツク雑音は次のような原理
で発生する。例えば、第５図（ａ）の水晶振動子におい
て、外部の機械的衝撃、振動が回路基板５８を経由して
水晶振動子の気密容器５１に伝達すると、水晶振動片５
３は気密容器５１内で保持器５４に片持ち保持されてい
るので、機械的に振動する。The microphonic noise of a piezoelectric generator is generated by the following principle. For example, in the crystal resonator shown in FIG.
3 is held cantilevered by the holder 54 in the airtight container 51, so it vibrates mechanically.
一般に水晶振動子内部には、例えば、第６図（Ｃ）の他
の水晶振動子の等価回路において示すように、水晶振動
片６４の電極と気密容器６３との間に浮遊容量ＣＩ、Ｃ
２に相当する浮遊容量が存在する。Generally, inside a crystal resonator, there is a stray capacitance CI, C between the electrode of the crystal resonator piece 64 and the airtight container 63, as shown in the equivalent circuit of another crystal resonator in FIG.
There is a stray capacitance equivalent to 2.
従って、第５図（ａ）の気密容器５１内で水晶振動片５
３が機械的に振動すると、前記浮遊容量はこの機械的振
動に同期して変化し、水晶振動子が接続する発振回路の
負荷容量を変化させたと同じ効果を発振回路に与える。Therefore, in the airtight container 51 of FIG. 5(a), the crystal vibrating piece 5
3 mechanically vibrates, the stray capacitance changes in synchronization with this mechanical vibration, giving the oscillation circuit the same effect as changing the load capacitance of the oscillation circuit connected to the crystal resonator.
その結果、発振周波数はＦＭ変調されて雑音を発生して
出力周波数の品質が劣化する。この雑音の復調音が、丁
度マイクロフォンを叩くときに発生する音響に類似して
観測されることから、この名称が付けられた。As a result, the oscillation frequency is FM-modulated, generating noise and deteriorating the quality of the output frequency. This name was given because the demodulated sound of this noise is observed to be similar to the sound generated when a microphone is hit.
一般に、例えば、携帯用無線通信機の水晶発振器におい
て、外部の機械的衝撃、振動に対して容易に機械振動し
ない構造にするため、あるいは他の部品と衝突、接近を
避けるため、例えば、第５図（ｂ）の水晶振動子を回路
基板５８の接地パターン５９に固定具５７で半田付は固
定する方法がとられる。Generally, for example, in a crystal oscillator of a portable wireless communication device, a fifth A method is used in which the crystal resonator shown in FIG. 5B is fixed to the ground pattern 59 of the circuit board 58 by soldering with a fixture 57.
かつ、消費電力を低減するため、発振回路の水晶振動子
の負荷容量をできる限り小さく選ぶ必要があり、例えば
、第７図の水晶発振回路において、コンデンサーＣ４、
Ｃ５、Ｃ６とＣＭＯＳ−ＩＣ７１と抵抗Ｒ１、Ｒ２と水
晶振動子７４とより構成される発振回路インピーダンス
の位相回転で決まる負荷容量を十数ＰＦの値に選ぶこと
がある。In addition, in order to reduce power consumption, it is necessary to select the load capacitance of the crystal resonator of the oscillation circuit as small as possible. For example, in the crystal oscillation circuit shown in FIG.
The load capacitance determined by the phase rotation of the impedance of the oscillation circuit constituted by C5, C6, the CMOS-IC 71, the resistors R1, R2, and the crystal resonator 74 may be selected to a value of more than ten PF.
このとき、例えば、第７図の水晶振動子７４の電極と気
密容器との間にある浮遊容量が外部の機械的衝撃、振動
で変化すると、負荷容量が小さ射場台は、その変化率は
相対的に大きくなるから、マイクロッオニツク雑音を発
生させ易く、かつ外部からのＥＭ１入射レベルが発振レ
ベルに比べて相対的に大きくなるから、ＥＭＩの影響を
受は易かった。At this time, for example, if the stray capacitance between the electrode of the crystal oscillator 74 and the airtight container in FIG. 7 changes due to external mechanical shock or vibration, the rate of change will be relatively Since the oscillation level becomes large, it is easy to generate microonic noise, and the level of EM1 incident from the outside is relatively large compared to the oscillation level, so it is easy to be affected by EMI.
（従来の技術）
従来より、水晶振動子が外部からの機械的振動、衝撃の
影響を受けないようにするため、例えば、第５図（ｂ）
の水晶振動子の例に示すように、気密容器５１を回路基
板５日の接地パターン５９に固定具５７を介して接地・
固定する方法が有効であると考えられていた。(Prior Art) Conventionally, in order to prevent a crystal resonator from being affected by external mechanical vibrations and shocks, for example, as shown in FIG. 5(b),
As shown in the example of a crystal resonator, the airtight container 51 is grounded to the grounding pattern 59 of the circuit board 5 through the fixture 57.
Fixation was considered to be an effective method.
しかし、水晶振動子の内部構造を考察してみると、この
気密容器５１の固定・接地は発振周波数の安定化に必ず
しも有効な手段となり得ない。However, when considering the internal structure of the crystal resonator, fixing and grounding the airtight container 51 cannot necessarily be an effective means for stabilizing the oscillation frequency.
すなわち、例えば、図示しないピアノ線などの弾性材か
らなる線状保持器は水晶振動片を柔軟に支持でき、発振
に影響を与えることが少ないので、従来から好んで用い
られてきたが、水晶振動片を弱い弾性片持ち支持する保
持系構成となるため、この機械的共振点は低く、特に水
晶振動片の主面垂直方向に加わる機械的衝撃、振動に対
して制振効果が劣り、この保持系を持つ水晶振動子はマ
イクロッオニツク雑音を発生し易かった。In other words, for example, a linear retainer made of an elastic material such as piano wire (not shown) can flexibly support the crystal vibrating piece and has little effect on oscillation, so it has traditionally been preferred; Since the holding system has a weak elastic cantilever support structure, the mechanical resonance point is low, and the damping effect is poor especially against mechanical shock and vibration applied in the direction perpendicular to the main surface of the crystal vibrating piece. Crystal oscillators with systems tend to generate microphonic noise.
そこで、例えば、第５図（ａ）の水晶振動子の例に示す
ように、薄い弾性材からなる板状保持器５４を用い、水
晶振動片５３の辺縁部で水晶振動片を浅く挟持し、少量
の接着剤で固定して、この保持系の機械的共振点を高い
周波数域に移行させ、その主面垂直方向に加わる機械的
衝撃、振動に対する制振効果を高め、かつ水晶振動片５
３の発振を抑制することなくマイクロッオニツク雑音発
生の少ない発振を得るようにしている。Therefore, for example, as shown in the example of a crystal resonator in FIG. 5(a), a plate-shaped retainer 54 made of a thin elastic material is used to shallowly sandwich the crystal vibrating piece 53 at its edge. , by fixing it with a small amount of adhesive to shift the mechanical resonance point of this holding system to a high frequency range, increasing the damping effect against mechanical shock and vibration applied in the direction perpendicular to its main surface, and crystal vibrating piece 5.
This is to obtain oscillation with less microphonic noise generation without suppressing the oscillation of 3.
水晶振動片５３が気密容器５１と接触するのを防ぐため
、インシュレーター５２を気密容器５１に内挿させるこ
とがある。In order to prevent the crystal vibrating piece 53 from coming into contact with the airtight container 51, an insulator 52 may be inserted into the airtight container 51.
しかし、外部の機械的衝撃、振動の周波数が水晶振動片
５３の保持系の機械的共振点と一致すると共鳴振動する
。さらに、この水晶振動子の実装回路基板に既に多くの
小型部品が高密度実装されていると、回路基板全体の機
械的共振周波数も一般に高くなる傾向を示し、この水晶
振動子の保持系共娠点と一致し易い。However, when the frequency of external mechanical shock or vibration matches the mechanical resonance point of the holding system of the crystal vibrating piece 53, resonance vibration occurs. Furthermore, if many small components are already mounted at a high density on the circuit board on which this crystal resonator is mounted, the mechanical resonance frequency of the entire circuit board will generally tend to increase, and the crystal resonator's holding system will become strained. It is easy to match the points.
また、水晶振動子が回路基板に固定されると、外部の機
械的衝撃、振動は減衰することなく水晶振動子に直接伝
播し水晶振動片５３を強く振動させ易い。Further, when the crystal resonator is fixed to the circuit board, external mechanical shocks and vibrations are directly propagated to the crystal resonator without being attenuated, and tend to cause the crystal resonator piece 53 to vibrate strongly.
あるいは、強い衝撃により、板状保持器５４が衝撃を吸
収緩和できず、水晶振動片５３は簡単に破損することが
あった。Alternatively, due to a strong impact, the plate-shaped retainer 54 may not be able to absorb or alleviate the impact, and the crystal vibrating piece 53 may be easily damaged.
これらの問題点を解決するため、例えば、第６図（ａ）
の水晶振動子において、気密容器６３に外容器６１を設
け、その間にＭ桁材６２を充填し、かつ外部引出しリー
ド線６６と水晶振動子リード線の間を緩衝線６５により
接続して、外部からの機械的衝撃、振動を機械的に緩和
する手段がとられる。In order to solve these problems, for example, Fig. 6(a)
In this crystal resonator, an outer container 61 is provided in an airtight container 63, an M-girder material 62 is filled between them, and a buffer wire 65 is used to connect an external lead wire 66 and a crystal resonator lead wire. Measures are taken to mechanically alleviate mechanical shock and vibration from
この技術は外容器６１を恒温槽とした水晶発振器等に好
んで利用されており、外部からの機械的衝撃、振動に含
まれる高い周波数成分を緩衝材６２が吸収減衰する効果
と、板状保持器の機械的共振点が高い周波数域に移行す
ることの不整合性により、望ましい相補的効果を奏する
。This technology is preferably used in crystal oscillators etc. in which the outer container 61 is a thermostatic chamber, and the buffer material 62 absorbs and attenuates high frequency components included in external mechanical shocks and vibrations. The mismatch of the mechanical resonance point of the device moving to a higher frequency range produces a desirable complementary effect.
さらに、第６図（ａ）の水晶振動子の等価回路である同
図（Ｃ）において、外客器６１と気密容器６３との間に
生じた電気容量Ｃ３は、浮遊容量ＣＩ、Ｃ２と直列接続
となるから、それら浮遊容量の変化を電気的に緩和する
よう機能する。Furthermore, in FIG. 6(C), which is an equivalent circuit of the crystal oscillator in FIG. Since it is a connection, it functions to electrically alleviate changes in stray capacitance.
これらの相乗効果により、マイクロッオニツク雑音の発
生を効果的に抑止させている。These synergistic effects effectively suppress the generation of microphonic noise.
（従来技術の欠点）
しかしながら、これらの技術をもってしても、なお根本
的な解決とはなりえず、マイクロッオニツク雑音の発生
の根本的な抑止とＥＭＩの影響の防止とを可能にする解
決策が強く望まれていた。(Disadvantages of the prior art) However, even with these technologies, it is still not possible to provide a fundamental solution, and it is possible to fundamentally suppress the generation of microphonic noise and prevent the effects of EMI. A solution was desperately needed.
すなわち、板状保持器を用いると、この保持系の機械的
共振点を、比較的低いレベルの高い周波数域に移行でき
、マイクロッオニツク雑音の発生を低減できるが、この
保持系の機械的共振点に近い周波数の振動に対して解決
されていない。In other words, by using a plate-shaped retainer, the mechanical resonance point of this retaining system can be shifted to a relatively low-level, high frequency range, and the generation of microphonic noise can be reduced. It has not been resolved for vibrations with frequencies close to the resonance point.
さらに、この板状保持器は水晶振動片に歪を与えその周
波数温度特性を変化させ、かつ発振を抑制して等価抵抗
値を高め易く、水晶発振器の周波数・出力特性を劣化さ
せていた。Furthermore, this plate-shaped retainer applies strain to the crystal vibrating piece, changes its frequency-temperature characteristics, suppresses oscillation, tends to increase the equivalent resistance value, and deteriorates the frequency and output characteristics of the crystal oscillator.
また、衝撃に対して、水晶振動片は剛体支持に近いため
容易に破損し易かフた。Furthermore, since the crystal vibrating piece is similar to a rigid support, it is easily damaged by impact.
なお、ＥＭＩの影響を防止するには、例えば、第５図（
ａ）の気密容器５１あるいは第６図（ａ）の外用器６１
に常磁性体を用いる必要があるが、気密容器５１の封止
に必要な材質的条件と、ＥＭＩ防止に求められている材
質的条件とに差異を生じ、その整合に時に困難があった
。In addition, in order to prevent the influence of EMI, for example, as shown in Fig. 5 (
Airtight container 51 in a) or external container 61 in FIG. 6(a)
However, there is a difference between the material conditions required for sealing the airtight container 51 and the material conditions required for EMI prevention, and it is sometimes difficult to match them.
これらの課題の他に、例えば、第６図（ａ）の水晶振動
子において、形状はどうしても大きくなり勝ちであり、
狭い空間に収納する目的には適しない。また、気密容器
６３が緩衝材６２の中で振動すると電気容量Ｃ３の変化
となり、新たなマイクロッオニツク雑音を発生させる恐
れがあった。In addition to these problems, for example, in the crystal resonator shown in FIG. 6(a), the shape tends to be large,
Not suitable for storage in narrow spaces. Further, when the airtight container 63 vibrates within the buffer material 62, the electric capacitance C3 changes, which may generate new microphonic noise.
さらに、この緩衝材６２による振動エネルギーの吸収減
衰はその厚みと密接に関係しており、水晶発振器の小型
化でその厚みを制限せざるを得す、所望する吸収減衰効
果を期待できなかった。Furthermore, the absorption and damping of vibrational energy by the buffer material 62 is closely related to its thickness, and as the crystal oscillator is made smaller, the thickness must be limited, and the desired absorption and damping effect cannot be expected.
（発明の目的）
本発明は、マイクロッオニツク雑音の発生を抑止した圧
電発振器を提供することを第１の目的とする。(Objective of the Invention) A first object of the present invention is to provide a piezoelectric oscillator that suppresses the generation of microphonic noise.
本発明は、マイクロッオニツク雑音の発生を抑止しかつ
ＥＭＩの影響を防止した圧電発振器を提供することを第
２の目的とする。A second object of the present invention is to provide a piezoelectric oscillator that suppresses the generation of microphonic noise and prevents the influence of EMI.
（発明の解決手段）
本発明は、リード線が貫通された気密容器内に保持され
前記リード線に電気的に接続された圧電振動片を気密封
止してなる圧電振動子を発振回路に接続した圧電発振器
において、この圧電振動子の気密容器に電気的に互いに
絶縁された少なくとも二重の電気多重層を設け、その間
に電気容量を生じさせるたことを第１の解決手段とする
。(Means for Solving the Invention) The present invention provides a piezoelectric vibrator formed by hermetically sealing a piezoelectric vibrating piece held in an airtight container through which a lead wire is passed and electrically connected to the lead wire, which is connected to an oscillation circuit. In the piezoelectric oscillator, the first solution is to provide at least two electrical multilayers electrically insulated from each other in the airtight container of the piezoelectric vibrator, and to generate an electrical capacitance therebetween.
本発明は、電気多重層を少なくとも常磁性体を成分とす
る一層を含む電気的に互いに絶縁された層となし、その
間に電気容量を生じさせたことを第２の解決手段とする
。The second solution of the present invention is that the electric multilayer is electrically insulated from each other, including at least one layer containing a paramagnetic material, and a capacitance is created between them.
（発明の作用）
水晶振動片の電極と気密容器に内設された電気良導体と
の間に存在する浮遊容量をＣＩ、Ｃ２とすると、水晶振
動片が気密容器のほぼ中央に位置しているので、静止状
態においてＣｌ＝Ｃ２＝Ｃと仮定しても、−殺性は失わ
れず、実際の適用に支障はない。(Function of the invention) If the stray capacitances that exist between the electrodes of the crystal vibrating piece and the electrically conductive conductor installed inside the airtight container are CI and C2, then since the crystal vibrating piece is located almost in the center of the airtight container, Even if it is assumed that Cl=C2=C in a static state, the -killing effect is not lost and there is no problem in actual application.
そこで、水晶振動子の水晶撮動片のインピーダンスをＺ
ｘ、気密容器と気密容器に内設する電気良導体との間の
電気容量を０３とし、水晶振動片が機械的振動している
とすると、浮遊容量ＣＩ、Ｃ２はそれぞれ次のように表
オつされる。Therefore, the impedance of the crystal photographing piece of the crystal resonator is set to Z.
x, the electric capacitance between the airtight container and a good electrical conductor installed inside the airtight container is 03, and if the crystal vibrating piece is mechanically vibrating, then the stray capacitances CI and C2 are expressed in the following table. be done.
ＣＩ＝Ｃ（１＋ａ）
Ｃ２＝Ｃ（１−ａ）
ここで、ａは機械的振動による浮遊容量の変化率を示す
。CI=C(1+a) C2=C(1-a) Here, a represents the rate of change in stray capacitance due to mechanical vibration.
この水晶振動子の一方の端子と接地との間に発振器の接
続終端インピーダンスＺＯを接続すると、水晶振動子の
他方の端子側よりみた入力端インピーダンスＺｉは次式
のように近似表現される。When the connection terminal impedance ZO of the oscillator is connected between one terminal of the crystal oscillator and the ground, the input terminal impedance Zi viewed from the other terminal side of the crystal oscillator can be approximately expressed as shown in the following equation.
Ｚ ｉ ＝ （１−ａ）Ｚｘ／Ａ＋ （ｓＣ３＋Ａ）＊
（（１＋ａ）Ｚｘ＋ＡＺｏ） ／
Ａ Ｃ（１＋ａ）ＳＣ３ＺＸ＋ＡＳＣ３ＺＸ＋ｓＣ３
＋Ａ）
但し、Ａ＝２＋５ＣＺｘ 、ａ＜＜１゜ｓ＝ｊω（角周
波数）
ここで、Ｃ３の効果を検証するため、Ｃ３の特別な場合
を考察する。Z i = (1-a)Zx/A+ (sC3+A)*
((1+a)Zx+AZo) / A C(1+a)SC3ZX+ASC3ZX+sC3
+A) However, A=2+5CZx, a<<1°s=jω (angular frequency) Here, in order to verify the effect of C3, a special case of C3 will be considered.
（イ）Ｃ３＝Ｏの場合
これは、気密容器が接地されていない場合、あるいは電
気二重層の電気容量が十分に小さく無視できる場合に相
当する。このとき、
Ｚ １＝２Ｚｘ／ （２＋５ＣＺｘ）＋Ｚ。(a) Case where C3=O This corresponds to a case where the airtight container is not grounded or a case where the electric capacity of the electric double layer is sufficiently small and can be ignored. At this time, Z 1=2Zx/ (2+5CZx)+Z.
すなわち、Ｚｉに浮遊容量ＣＩ、Ｃ２の変化率ａを含ま
ないので、マイクロッオニツク雑音の発生はない。That is, since Zi does not include the rate of change a of the stray capacitances CI and C2, no microphonic noise is generated.
（ロ）Ｃ３＝閃の場合
これは、金属製気密容器のみからなる気密容器を直接接
地した場合、あるいは気密容器に内設されている電気良
導体を直接接地した場合に相当する。このとき、
Ｚ ｉ＝ （Ｚｏ＋２Ｚｘ＋２Ｚｘ ）／Ａ−２ａ
Ｚｘ／Ａ （１＋２Ｚｘ）
すなわち、浮遊容ｆｌｃ１．Ｃ２の変化率ａを含みマー
イクロフォニック雑音を顕著に発生する。(b) In the case of C3 = Flash This corresponds to the case where an airtight container consisting only of a metal airtight container is directly grounded, or the case where a good electrical conductor installed inside the airtight container is directly grounded. At this time, Z i= (Zo+2Zx+2Zx)/A-2a
Zx/A (1+2Zx) That is, floating capacity flc1. This includes the rate of change a of C2 and significantly generates microphonic noise.
本発明は（イ）の原理に着目してなされたもので、気密
容器に電気良導体と電気絶縁体とよりなる電気二重層を
形成させ、この間に電気容量を生じさせたものである。The present invention has been made by focusing on the principle (a), in which an electric double layer consisting of a good electrical conductor and an electric insulator is formed in an airtight container, and an electric capacitance is generated between the layers.
この場合、発生した電気容量をできる限り小さくするた
め、例えば、上記電気二重層を多数積層した構成の電気
多重層となして、この各積層の電気容量が互いに直列接
続となることにより、全体の電気容量をほぼ電気二重層
単層においで生ずる電気容量の多層数分の１に低減する
ことかできる。In this case, in order to reduce the generated capacitance as much as possible, for example, by forming an electrical multi-layer structure in which a large number of the above-mentioned electrical double layers are laminated, and by connecting the capacitances of each laminated layer in series with each other, the overall The capacitance can be reduced to approximately one-fold of the capacitance generated in a single electric double layer by the number of layers.
そして、上記電気多重層に常磁性体と電気良導体を組み
合わせることにより、例えば、電気磁気遮蔽効果等を利
用でき、外部から入射されるＥＭ！の影響をも防止でき
る。By combining a paramagnetic material and a good electrical conductor in the above-mentioned electrical multilayer, it is possible to utilize, for example, an electromagnetic shielding effect, and reduce the amount of EM incident from the outside! It can also prevent the effects of
（実施例）
第１図（ａ）は本発明の一実施例を説明する金属製気密
容器に電気二重層を設けてなる水晶振動子の図で、同図
（ａ）はその斜視図、同図（１））はその断面図、同図
（ｃ）はその電気二重層内層の斜視図である。電気二重
層は、気密容器１１の内壁に密着して同図（ｃ）に示す
電気絶縁体１２に被覆された電気良導体１３と、気密容
器１１とから構成される。なお、電気二重層の電気容量
値は、電気絶縁体１２の誘電率と厚みと電気良導体１３
の有効面積とを変えることにより小さく設定できる。電
気良導体１３は水晶片１４の電極１５に略対向した位置
に配置される。また、水晶振動片１４は弾性線材からな
る保持器１６により支持され、従来の保持系の構成をそ
のまま使用している。(Embodiment) FIG. 1(a) is a diagram of a crystal resonator formed by providing an electric double layer in a metal airtight container, illustrating an embodiment of the present invention, and FIG. 1(a) is a perspective view thereof, and FIG. Figure (1)) is a sectional view thereof, and Figure (c) is a perspective view of the inner electric double layer thereof. The electric double layer is composed of the airtight container 11 and a good electrical conductor 13 that is in close contact with the inner wall of the airtight container 11 and covered with an electrical insulator 12 as shown in FIG. Note that the capacitance value of the electric double layer is determined by the dielectric constant and thickness of the electric insulator 12 and the electric conductor 13.
It can be set small by changing the effective area of . The electrical conductor 13 is arranged at a position substantially opposite to the electrode 15 of the crystal piece 14 . Further, the crystal vibrating piece 14 is supported by a retainer 16 made of an elastic wire, and the configuration of a conventional retaining system is used as is.
第２図（ａ）は他の実施例を示す表面実装用の水晶振動
子の図で、同図の（ａ）はその斜視図、同図（ｂ）はそ
の断面図である。この実施例では、電気二重層を電気絶
縁体からなる気密容器２１の内外壁面上に電気二重層を
設けてなる。この電気二重層は、電気良導体または常磁
性体からなる膜面または板面２２及び２７を、蒸着また
は接着により気密容器２１に密着させてなるもので、一
般に電気絶縁体からなる気密容器２１のＥＭＩに影響さ
れ易い欠点を、マイクロッオニツク雑音の発生の抑止と
同時に解決している。FIG. 2(a) is a diagram of a surface-mounted crystal resonator showing another embodiment; FIG. 2(a) is a perspective view thereof, and FIG. 2(b) is a sectional view thereof. In this embodiment, an electric double layer is provided on the inner and outer walls of an airtight container 21 made of an electric insulator. This electric double layer is made by adhering film or plate surfaces 22 and 27 made of a good electrical conductor or a paramagnetic material to the airtight container 21 by vapor deposition or adhesion, and generally reduces the EMI of the airtight container 21 made of an electrical insulator. This solves the problem of being susceptible to microphonic noise at the same time as suppressing the generation of microphonic noise.
第３図はさらに他の実に例を示す水晶振動子の図で、第
１図の実施例の電気二重層を簡易型にしたものである。FIG. 3 is a diagram showing still another example of a crystal resonator, which is a simplified version of the electric double layer of the embodiment shown in FIG.
すなわち、気密容器３１の内壁面上に水晶振動片３４の
電極に対向して電気絶縁体３２と、電気良導体３３を接
着して電気二重層を形成させている。なお、電気二重層
は気密容器３１の筒状部壁面内に機械的に密着し形成さ
せてもよく、例えば、気密容器３１に内接する筒状の電
気絶縁体３２を、弾発材からなる板状の電気良導体３３
を折曲し圧着させることにより、接着を利用することな
く容易に形成することができる。That is, an electrical insulator 32 and a good electrical conductor 33 are bonded on the inner wall surface of the airtight container 31 facing the electrodes of the crystal vibrating piece 34 to form an electrical double layer. Note that the electric double layer may be formed by mechanically adhering to the wall surface of the cylindrical portion of the airtight container 31. For example, the cylindrical electrical insulator 32 inscribed in the airtight container 31 may be covered with a plate made of resilient material. Good electrical conductor 33
By bending and press-fitting, it can be easily formed without using adhesive.
また、単板状の電気絶縁体３２０片面に塗装または蒸着
等の方法を用いて部分電気良導体膜３３を形成し、これ
を気密容器３１内に圧着または接着させて電気二重層を
形成することもできる。Alternatively, a partial electrically conductive film 33 may be formed on one side of the single-plate electrical insulator 320 using a method such as painting or vapor deposition, and this may be crimped or adhered inside the airtight container 31 to form an electrical double layer. can.
第４図はさらに他の実施例図であるボタン型水晶振動子
の図で、気密容器となるカバー４４の内壁面上に、電気
絶縁体４２と電気良導体４３とを積層して接着し、水晶
振動片の電極４５にほぼ対向させ、電気二重層を形成さ
せている。なお、気密容器となるベース４７内面上の電
気二重層についても同様にして形成させている。ここで
、第３図の実施例と同様に、電気絶縁体４２または４８
の上に電気良導体膜４３または４９を形成させ、それぞ
れ気密容器内面に接着させることにより、電気二重層を
形成させることもできる。FIG. 4 is a diagram of yet another embodiment of a button-type crystal resonator, in which an electrical insulator 42 and an electrically conductive material 43 are laminated and bonded on the inner wall surface of a cover 44 that serves as an airtight container, and a crystal It is made to substantially oppose the electrode 45 of the vibrating piece to form an electric double layer. Note that the electric double layer on the inner surface of the base 47, which becomes an airtight container, is also formed in the same manner. Here, as in the embodiment of FIG.
An electrical double layer can also be formed by forming an electrically conductive film 43 or 49 thereon and adhering it to the inner surface of the airtight container, respectively.
以上に実施例を説明したが、いずれも気密容器に電気多
重層を設けたので、マイクロッオニツク雑音を抑止する
。そして、電気二重層の一層を常磁性体とすることによ
りＥＭＩの影響を防止する。Although the embodiments have been described above, in all the embodiments, an electrical multilayer is provided in the airtight container, so that microphonic noise is suppressed. By making one layer of the electric double layer a paramagnetic material, the influence of EMI is prevented.
そして、これらの実施例では、公知の構成、例えばピア
ノ線による保持器構造等を適用して、気密容器に電気二
重層を１寸前すればよいので、既存の製造工程及び条件
を変更する′必要がない。従って製造コストを格別高め
ることなく実現できる。In these embodiments, it is sufficient to apply a known structure, such as a cage structure made of piano wire, to add just one electric double layer to the airtight container, so there is no need to change the existing manufacturing process and conditions. There is no. Therefore, it can be realized without particularly increasing the manufacturing cost.
さらに、この水晶振動子を発振回路基板に固定したり或
は外容器内に緩衝材を充填したりする必要もなく小型化
でき、接地等に特別な配慮を必要とせず、他の部品と同
等な取扱いができ、水晶発振器の組立製造に有利である
。Furthermore, this crystal resonator can be miniaturized without the need to fix it to the oscillation circuit board or fill the outer container with cushioning material, and does not require special consideration for grounding, etc., and is equivalent to other parts. It can be easily handled and is advantageous for the assembly and manufacture of crystal oscillators.
すなわち、この電気多重層は気密容器に密着して設けら
れるので、機械的衝撃、振動に対して撮動し変化するこ
となくその電気容量を安定させることができ、例えば、
第６図（ａ）の従来の水晶振動子においてあった気密容
器６３の振動による電気容量Ｃ３の変化に起因する新た
なマイクロッオニツク雑音の発生がない。In other words, since this electrical multilayer is provided in close contact with the airtight container, it is possible to stabilize its electrical capacity without changing when subjected to mechanical shocks and vibrations.
No new microphonic noise is generated due to the change in the capacitance C3 due to the vibration of the airtight container 63, which was present in the conventional crystal resonator shown in FIG. 6(a).
（その他の事項）
本発明は水晶発振器のみに適用限定されるべきでなく、
例えば、リチウムタンタレイ！・、リチウムナイオベイ
ト、セラミック圧電材等の圧電材料からなる圧電振動子
において、その気密容器内で保持器により中空に支持さ
れた構造を有する圧電振動子を使用する圧電発振器に広
く適用できるものである。(Other matters) The present invention should not be limited to application only to crystal oscillators;
For example, lithium tantaray!・It can be widely applied to piezoelectric oscillators that use piezoelectric vibrators made of piezoelectric materials such as lithium niobate and ceramic piezoelectric materials, which have a structure in which the piezoelectric vibrators are supported hollowly by a holder in an airtight container. be.
また、ＨＩＣ（混成集積回路）等よりなる発振器回路基
板に水晶振動片を搭載し、それを気密容器内に気密封止
してなる小型水晶発振器等において、この水晶振動片を
保持器により中空に支持す構造を有するものに対して、
前記気密容器に本発明を適用することができる。In addition, in small crystal oscillators, etc., in which a crystal vibrating piece is mounted on an oscillator circuit board made of a HIC (hybrid integrated circuit), etc., and it is hermetically sealed in an airtight container, this crystal vibrating piece is held in the air by a holder. For those with supporting structures,
The present invention can be applied to the airtight container.
さらに、本発明の実施例に示した電気多重層は二重層に
限らず多層に積層し構成できる。Furthermore, the electrical multilayer shown in the embodiments of the present invention is not limited to a double layer, but can be constructed by laminating multiple layers.
いづれの実施例においても、電気良導体に、例えば、常
磁性体に電気良導体膜を塗装または蒸着させた金属板等
を用いることができる。In any of the embodiments, the electrically conductive material may be, for example, a metal plate made of a paramagnetic material coated or vapor-deposited with an electrically conductive film.
（発明の効果）
本発明は、以上に詳述したように、圧電振動片を封入す
る気密容器に電気多重層を設けてその間に電気容量を生
じさせたので、マイクロッオニ・ンク雑音の発生を抑止
できる。そして、電気多重層を電気良導体と常磁性体と
の積層とすることにより、ＥＭＩの影響を防止できる。(Effects of the Invention) As described in detail above, the present invention provides an electrical multilayer in the airtight container that encloses the piezoelectric vibrating piece, and generates electrical capacitance therebetween, thereby suppressing the generation of micro-onc noise. can. By making the electrical multilayer a laminated layer of a good electrical conductor and a paramagnetic material, the influence of EMI can be prevented.
第１図は本発明に係わる金属製気密容器を有すろ水晶振
動子の一実施例図であり、同図（ａ）は同水晶振動子の
斜視図、同図（ｂ）は副断面図、同図（ｃ）は電気二重
層構成する部分の構造斜視図である。
第２図は本発明に係わる表面実装用水晶振動子の他の一
実施例図であり、同図（ａ）は同水晶振動子の斜視図、
同図（ｂ）はその側断面図である。
第３図は本発明に係わる金属製気密容器を有する水晶振
動子の他の一実施例の側断面図である。
第４図は本発明に係わるボタン型水晶振動子の他の一実
施例の側断面図である。
第５図は水晶振動子の従来例図であり、同図（ａ）はそ
の譲す断面図、同図（ｂ）はその実装側側１．２１，３
１，４１．４７・・・・・・気密容器、２．３２．４２
・・・・・・電気絶縁体、３．２２，２７．４３・・・
・・・電気良導体、４．２３，３４・・・・・・水晶振
動片、５、 ２４．４５・・・・・・電極、
６．２６，３５，４６・・・・・・保持器、ｌ・・・・
・・ＣＭＯＳ−ＩＣ。
同図（ａ）は同水晶振動子の側断面図、同図（ｂ）はそ
の電気的模式図、同図（ｃ）はその等価回路図である。
第７図はＣＭＯＳ−１Ｃを用いた水晶発振器の回路図を
示す。
１図
第３１！！
第４１！！
第５図
（ａ）
（ｂ）FIG. 1 is an embodiment of a crystal resonator having a metal airtight container according to the present invention, in which (a) is a perspective view of the crystal resonator, and (b) is a sub-sectional view of the crystal resonator. FIG. 3(c) is a structural perspective view of a portion constituting an electric double layer. FIG. 2 is a diagram showing another embodiment of a surface-mounted crystal resonator according to the present invention, and FIG. 2(a) is a perspective view of the crystal resonator;
Figure (b) is a side sectional view thereof. FIG. 3 is a side sectional view of another embodiment of a crystal resonator having a metal airtight container according to the present invention. FIG. 4 is a side sectional view of another embodiment of the button-type crystal resonator according to the present invention. Figure 5 shows a conventional example of a crystal resonator, in which (a) is a cross-sectional view, and (b) is a mounting side 1.21, 3.
1,41.47...Airtight container, 2.32.42
・・・・・・Electrical insulator, 3.22, 27.43...
...Good electrical conductor, 4.23,34...Crystal vibrating piece, 5, 24.45...Electrode, 6.26,35,46...Cage, l...
...CMOS-IC. 3(a) is a side cross-sectional view of the crystal resonator, FIG. 2(b) is its electrical schematic diagram, and FIG. 2(c) is its equivalent circuit diagram. FIG. 7 shows a circuit diagram of a crystal oscillator using CMOS-1C. Figure 1 No. 31! ! 41st! ! Figure 5 (a) (b)
Claims (4)
リード線に電気的に接続された圧電振動片を気密封止し
てなる圧電振動子を発振回路に接続した圧電発振器にお
いて、この圧電振動子の気密容器に電気的に互いに絶縁
された少なくとも二重の電気多重層を設け、その間に電
気容量を生じさせたことを特徴とする圧電発振器。(1) In a piezoelectric oscillator in which a piezoelectric vibrator formed by hermetically sealing a piezoelectric vibrating piece held in an airtight container through which a lead wire is passed and electrically connected to the lead wire is connected to an oscillation circuit, the piezoelectric 1. A piezoelectric oscillator characterized in that an airtight container of a vibrator is provided with at least two electrical multilayers electrically insulated from each other, and a capacitance is generated between them.
する一層を含むことを特徴とする特許請求の範囲第１項
記載の圧電発振器。(2) The piezoelectric oscillator according to claim 1, wherein the electrical multilayer includes at least one layer containing a paramagnetic material as a component.
の気密容器の内面に密着された電気絶縁体の内部または
表面に設けられた電気良導体とからなることを特徴とす
る特許請求の範囲第１項または第２項記載の圧電発振器
。(3) The electrical multilayer comprises an airtight container made of metal, and a good electrical conductor provided inside or on the surface of an electrical insulator that is in close contact with the inner surface of the airtight container. The piezoelectric oscillator according to item 1 or 2.
の内外壁面上に密着された電気良導体からなることを特
徴とする特許請求の範囲第１項または第２項記載の圧電
発振器。(4) The piezoelectric oscillator according to claim 1 or 2, wherein the electrical multilayer is made of a good electrical conductor that is closely adhered to the inner and outer walls of an airtight container made of an electrical insulator.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63020670A JPH082013B2 (en) | 1988-01-30 | 1988-01-30 | Piezoelectric oscillator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63020670A JPH082013B2 (en) | 1988-01-30 | 1988-01-30 | Piezoelectric oscillator |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0220909A true JPH0220909A (en) | 1990-01-24 |
| JPH082013B2 JPH082013B2 (en) | 1996-01-10 |
Family
ID=12033638
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63020670A Expired - Lifetime JPH082013B2 (en) | 1988-01-30 | 1988-01-30 | Piezoelectric oscillator |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH082013B2 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007181105A (en) * | 2005-12-28 | 2007-07-12 | Daishinku Corp | Piezoelectric oscillation device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57113608A (en) * | 1980-12-30 | 1982-07-15 | Seiko Epson Corp | Quartz oscillator |
| JPS6163107A (en) * | 1984-09-05 | 1986-04-01 | Nippon Dempa Kogyo Co Ltd | Crystal resonator |
| JPS6270453U (en) * | 1985-10-23 | 1987-05-02 |
-
1988
- 1988-01-30 JP JP63020670A patent/JPH082013B2/en not_active Expired - Lifetime
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57113608A (en) * | 1980-12-30 | 1982-07-15 | Seiko Epson Corp | Quartz oscillator |
| JPS6163107A (en) * | 1984-09-05 | 1986-04-01 | Nippon Dempa Kogyo Co Ltd | Crystal resonator |
| JPS6270453U (en) * | 1985-10-23 | 1987-05-02 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007181105A (en) * | 2005-12-28 | 2007-07-12 | Daishinku Corp | Piezoelectric oscillation device |
| JP4692277B2 (en) * | 2005-12-28 | 2011-06-01 | 株式会社大真空 | Piezoelectric vibration device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH082013B2 (en) | 1996-01-10 |
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