JPH0219973B2 - - Google Patents

Info

Publication number: JPH0219973B2
Authority: JP; Japan
Prior art keywords: polyacetylene film; film; polyacetylene; conductor; layer
Prior art date: 1981-09-18
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

JP56148094A

Other languages

English (en)

Japanese (ja)

Other versions

JPS5848942A (ja

Inventor

Nobuo Sasaki

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Fujitsu Ltd

Original Assignee

Fujitsu Ltd

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1981-09-18

Filing date

1981-09-18

Publication date

1990-05-07

1981-09-18 Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd

1981-09-18 Priority to JP14809481A priority Critical patent/JPS5848942A/ja

1982-09-17 Priority to EP82304904A priority patent/EP0075454B1/de

1982-09-17 Priority to DE8282304904T priority patent/DE3277759D1/de

1983-03-23 Publication of JPS5848942A publication Critical patent/JPS5848942A/ja

1987-01-22 Priority to US07/008,139 priority patent/US4761677A/en

1990-05-07 Publication of JPH0219973B2 publication Critical patent/JPH0219973B2/ja

Status Granted legal-status Critical Current

Links

HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 claims description 33
229920001197 polyacetylene Polymers 0.000 claims description 32
239000004065 semiconductor Substances 0.000 claims description 23
239000004020 conductor Substances 0.000 claims description 19
238000000034 method Methods 0.000 claims description 10
239000012535 impurity Substances 0.000 claims description 8
238000004519 manufacturing process Methods 0.000 claims description 7
239000000758 substrate Substances 0.000 claims description 6
ZXEYZECDXFPJRJ-UHFFFAOYSA-N $l^{3}-silane;platinum Chemical compound [SiH3].[Pt] ZXEYZECDXFPJRJ-UHFFFAOYSA-N 0.000 claims description 5
229910021339 platinum silicide Inorganic materials 0.000 claims description 5
238000000151 deposition Methods 0.000 claims 1
239000010410 layer Substances 0.000 description 26
239000003054 catalyst Substances 0.000 description 3
238000010586 diagram Methods 0.000 description 3
229910052751 metal Inorganic materials 0.000 description 3
239000002184 metal Substances 0.000 description 3
239000005360 phosphosilicate glass Substances 0.000 description 3
229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
230000015572 biosynthetic process Effects 0.000 description 2
238000005229 chemical vapour deposition Methods 0.000 description 2
239000000460 chlorine Substances 0.000 description 2
238000002347 injection Methods 0.000 description 2
239000007924 injection Substances 0.000 description 2
239000003960 organic solvent Substances 0.000 description 2
238000000059 patterning Methods 0.000 description 2
239000011734 sodium Substances 0.000 description 2
238000004544 sputter deposition Methods 0.000 description 2
238000007740 vapor deposition Methods 0.000 description 2
VLJQDHDVZJXNQL-UHFFFAOYSA-N 4-methyl-n-(oxomethylidene)benzenesulfonamide Chemical compound CC1=CC=C(S(=O)(=O)N=C=O)C=C1 VLJQDHDVZJXNQL-UHFFFAOYSA-N 0.000 description 1
ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
QZRGKCOWNLSUDK-UHFFFAOYSA-N Iodochlorine Chemical compound ICl QZRGKCOWNLSUDK-UHFFFAOYSA-N 0.000 description 1
WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
229910052782 aluminium Inorganic materials 0.000 description 1
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
YBGKQGSCGDNZIB-UHFFFAOYSA-N arsenic pentafluoride Chemical compound F[As](F)(F)(F)F YBGKQGSCGDNZIB-UHFFFAOYSA-N 0.000 description 1
150000001639 boron compounds Chemical class 0.000 description 1
GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
229910052794 bromium Inorganic materials 0.000 description 1
229910052801 chlorine Inorganic materials 0.000 description 1
238000009792 diffusion process Methods 0.000 description 1
125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
239000000835 fiber Substances 0.000 description 1
150000002222 fluorine compounds Chemical class 0.000 description 1
239000012212 insulator Substances 0.000 description 1
230000010354 integration Effects 0.000 description 1
239000011229 interlayer Substances 0.000 description 1
229910052740 iodine Inorganic materials 0.000 description 1
239000011630 iodine Substances 0.000 description 1
150000002497 iodine compounds Chemical class 0.000 description 1
238000005468 ion implantation Methods 0.000 description 1
150000002500 ions Chemical class 0.000 description 1
238000010030 laminating Methods 0.000 description 1
229910052744 lithium Inorganic materials 0.000 description 1
238000001459 lithography Methods 0.000 description 1
239000000203 mixture Substances 0.000 description 1
229910017604 nitric acid Inorganic materials 0.000 description 1
229910021340 platinum monosilicide Inorganic materials 0.000 description 1
229910052700 potassium Inorganic materials 0.000 description 1
239000011591 potassium Substances 0.000 description 1
229910021332 silicide Inorganic materials 0.000 description 1
FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
229910052708 sodium Inorganic materials 0.000 description 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

Engineering & Computer Science (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Manufacturing & Machinery (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Local Oxidation Of Silicon (AREA)
Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Semiconductor Integrated Circuits (AREA)
Formation Of Insulating Films (AREA)

JP14809481A 1981-09-18 1981-09-18 半導体装置とその製造方法 Granted JPS5848942A (ja)

Priority Applications (4)

Application Number	Priority Date	Filing Date	Title
JP14809481A JPS5848942A (ja)	1981-09-18	1981-09-18	半導体装置とその製造方法
EP82304904A EP0075454B1 (de)	1981-09-18	1982-09-17	Halbleiteranordnung mit leitender Verbindungsstruktur und Verfahren zum Herstellen derselben
DE8282304904T DE3277759D1 (en)	1981-09-18	1982-09-17	Semiconductor device having new conductive interconnection structure and method for manufacturing the same
US07/008,139 US4761677A (en)	1981-09-18	1987-01-22	Semiconductor device having new conductive interconnection structure and method for manufacturing the same

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
JP14809481A JPS5848942A (ja)	1981-09-18	1981-09-18	半導体装置とその製造方法

Publications (2)

Publication Number	Publication Date
JPS5848942A JPS5848942A (ja)	1983-03-23
JPH0219973B2 true JPH0219973B2 (de)	1990-05-07

Family

ID=15445100

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
JP14809481A Granted JPS5848942A (ja)	1981-09-18	1981-09-18	半導体装置とその製造方法

Country Status (1)

Country	Link
JP (1)	JPS5848942A (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS60148149A (ja) *	1984-01-13	1985-08-05	Nec Corp	半導体集積回路装置の製造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS4832581A (de) *	1971-08-31	1973-04-28
JPS55130161A (en) *	1979-03-30	1980-10-08	Showa Denko Kk	Fabricating method of p-n hetero junction element
JPS567450A (en) *	1979-06-29	1981-01-26	Ibm	Semiconductor device

1981
- 1981-09-18 JP JP14809481A patent/JPS5848942A/ja active Granted

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS4832581A (de) *	1971-08-31	1973-04-28
JPS55130161A (en) *	1979-03-30	1980-10-08	Showa Denko Kk	Fabricating method of p-n hetero junction element
JPS567450A (en) *	1979-06-29	1981-01-26	Ibm	Semiconductor device

Also Published As

Publication number	Publication date
JPS5848942A (ja)	1983-03-23

Publication	Publication Date	Title
US4398335A (en)	1983-08-16	Multilayer metal silicide interconnections for integrated circuits
KR100297173B1 (ko)	2001-10-24	반도체장치및그제조방법
US7632694B2 (en)	2009-12-15	Manufacturing method for a TFT electrode for preventing metal layer diffusion
JPH01138734A (ja)	1989-05-31	複導電体層を有する半導体装置およびその製造方法
JP2008536295A (ja)	2008-09-04	銀被覆電極を有するｌｃｄ装置
US4761677A (en)	1988-08-02	Semiconductor device having new conductive interconnection structure and method for manufacturing the same
US4488166A (en)	1984-12-11	Multilayer metal silicide interconnections for integrated circuits
EP0769808B1 (de)	2001-11-28	Nassätzverfahren mit hoher Selektivität zwischen Cu und Cu3Ge
JPH0778975A (ja)	1995-03-20	絶縁ゲート型電界効果トランジスタ
JPH0219973B2 (de)	1990-05-07
JP3156001B2 (ja)	2001-04-16	半導体装置の製造方法
JPS59195870A (ja)	1984-11-07	半導体装置
TWI819592B (zh)	2023-10-21	半導體裝置及其製作方法
JPS62154784A (ja)	1987-07-09	半導体装置
TW200425400A (en)	2004-11-16	Semiconductor device and method for fabricating the same
JPS5848941A (ja)	1983-03-23	半導体装置とその製造方法
JPH0117254B2 (de)	1989-03-29
JPS6240746A (ja)	1987-02-21	半導体装置
JPS6213051A (ja)	1987-01-21	半導体装置の製造方法
JPS61251170A (ja)	1986-11-08	Ｍｉｓ型半導体装置の製造方法
JPH0766203A (ja)	1995-03-10	半導体装置の製造方法
JPS61156885A (ja)	1986-07-16	半導体装置の製造方法
KR100195326B1 (ko)	1999-06-15	반도체 집적회로 배선구조 및 그 형성 방법
JPH03183126A (ja)	1991-08-09	半導体装置の製造方法
KR100203303B1 (ko)	1999-06-15	반도체 소자의 금속 배선 형성방법