JPH02182447A - Dielectric multilayer reflecting film - Google Patents
Dielectric multilayer reflecting filmInfo
- Publication number
- JPH02182447A JPH02182447A JP253589A JP253589A JPH02182447A JP H02182447 A JPH02182447 A JP H02182447A JP 253589 A JP253589 A JP 253589A JP 253589 A JP253589 A JP 253589A JP H02182447 A JPH02182447 A JP H02182447A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- reflective film
- multilayer reflective
- aluminum oxide
- laminated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 19
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims abstract description 9
- 238000010030 laminating Methods 0.000 claims abstract description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical class [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 42
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 abstract description 20
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 17
- 239000000377 silicon dioxide Substances 0.000 abstract description 17
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 abstract description 8
- 229910001635 magnesium fluoride Inorganic materials 0.000 abstract description 8
- 239000010408 film Substances 0.000 description 63
- BJQHLKABXJIVAM-UHFFFAOYSA-N bis(2-ethylhexyl) phthalate Chemical compound CCCCC(CC)COC(=O)C1=CC=CC=C1C(=O)OCC(CC)CCCC BJQHLKABXJIVAM-UHFFFAOYSA-N 0.000 description 30
- 230000003287 optical effect Effects 0.000 description 13
- 238000010586 diagram Methods 0.000 description 10
- 239000000463 material Substances 0.000 description 9
- 230000003595 spectral effect Effects 0.000 description 8
- 238000002834 transmittance Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 229910052731 fluorine Inorganic materials 0.000 description 4
- 239000011737 fluorine Substances 0.000 description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 239000012788 optical film Substances 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/08—Mirrors
- G02B5/0816—Multilayer mirrors, i.e. having two or more reflecting layers
- G02B5/0825—Multilayer mirrors, i.e. having two or more reflecting layers the reflecting layers comprising dielectric materials only
- G02B5/0833—Multilayer mirrors, i.e. having two or more reflecting layers the reflecting layers comprising dielectric materials only comprising inorganic materials only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
Landscapes
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Optical Elements Other Than Lenses (AREA)
- Optical Filters (AREA)
- Laminated Bodies (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はエキシマレーザのような紫外域レーザの光部品
に用いられる誘電体多層反射膜、特にエタロンの誘電体
多層反射膜に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a dielectric multilayer reflective film used in optical components of ultraviolet lasers such as excimer lasers, and particularly to a dielectric multilayer reflective film for etalons.
第４図は［ト１経マイクロデバイス、 １９０７年２月
号、８１Ｑ〜Ｊに掲載されている従来のエタロンの誘電
体の多層反射膜を模式的に示す構造断面図であり、図中
１は石英ガラスの！５板を示している。Figure 4 is a structural cross-sectional view schematically showing a multilayer reflective film of a dielectric material of a conventional etalon published in [To1 Microdevice, February 1907 issue, 81Q-J; Of quartz glass! 5 boards are shown.
基板ｌの上面には、光学膜１￥が２波長である酸化アル
ミニウム層３１が積層されており、その上面にはいずれ
も光学膜厚が２波長である二酸化シリコン層３２．酸化
アルミニウム層３１がこの順に１１回繰り返して積層さ
れている。そして、これら積層されている層の最外層即
ち、酸化アルミニウム層３１の上面の層としては光学膜
厚が２波長の二酸化シリコン層３２ａがさらに積層形成
されている。このように、従来のエタロンの誘電体の多
層反射膜は基＋Ｆｙ、 １上に酸化アルミニウム層３１
と二酸化シリコン層３２とを交互に２４層積層形成した
交互多Ｎ膜構造を有している。An aluminum oxide layer 31 having an optical film 1 of two wavelengths is laminated on the upper surface of the substrate l, and a silicon dioxide layer 32 . Aluminum oxide layers 31 are repeatedly stacked in this order 11 times. As the outermost layer of these laminated layers, that is, the layer on the upper surface of the aluminum oxide layer 31, a silicon dioxide layer 32a having an optical thickness of two wavelengths is further laminated. In this way, the dielectric multilayer reflective film of the conventional etalon consists of an aluminum oxide layer 31 on the base +Fy, 1.
It has an alternating multi-N film structure in which 24 layers and silicon dioxide layers 32 are alternately stacked.
一般に反射膜等、光学系に用いられる薄膜のレーザ耐性
は薄膜に用いられる材料、膜構成及び薄膜の内部応力に
依存している。ところで、従来交互多層膜の材料として
用いられている酸化アルミニウムは屈折率が高く、引張
り応力を有する一方で、レーザ耐性が小さいという特性
があり同様に交互多層膜の材料として用いられている二
酸化シリコンはレーザ耐性が大きく、圧縮応力を有する
一方で屈折率が低いという特性がある。従って上述した
従来のエタロンの多層反射膜は酸化アルミニウム層と二
酸化シリコン層とを交互に積層した交互多層膜構造を有
しているので、夫々の不具合いを打ち消し合うように作
用し、好ましい組合せとなっている。Generally, the laser resistance of a thin film used in an optical system, such as a reflective film, depends on the material used for the thin film, the film configuration, and the internal stress of the thin film. By the way, aluminum oxide, which has been conventionally used as a material for alternating multilayer films, has a high refractive index and has tensile stress, but has low laser resistance, and silicon dioxide, which is also used as a material for alternating multilayer films, has the characteristics of low laser resistance. has high laser resistance, has compressive stress, and has a low refractive index. Therefore, since the multilayer reflective film of the conventional etalon described above has an alternating multilayer film structure in which aluminum oxide layers and silicon dioxide layers are alternately laminated, they act to cancel out the disadvantages of each layer, resulting in a preferable combination. It has become.
また、レーザ光が多層反射膜に入射する場合の電解強度
は最外層即ち、第４図では二酸化シリコン層３２ａが最
も高く、多層反射膜の内部に侵入するにつれてその強度
が減衰していく。従来のエタロンの多層反射膜の最外層
に光学膜厚が２波長である低屈折率の二酸化シリコン層
３２ａを設けているのはこのためであり、低屈折率の二
酸化シリコンを用いることで多層反射膜のレーザ耐性を
向上させ、光学膜厚を２波長とすることで、異物質界面
において最大電解強度となるのを防いでいる。Further, when the laser beam is incident on the multilayer reflective film, the electrolytic strength is highest in the outermost layer, that is, the silicon dioxide layer 32a in FIG. 4, and the intensity decreases as it penetrates into the multilayer reflective film. This is why the low refractive index silicon dioxide layer 32a with an optical thickness of 2 wavelengths is provided as the outermost layer of the multilayer reflective film of the conventional etalon. By improving the laser resistance of the film and setting the optical film thickness to two wavelengths, the maximum electrolytic strength is prevented at the interface of foreign substances.
さて、レーザ光の光学系に用いられているエタロンには
エアギャップ型、単板型の２種類がある。Now, there are two types of etalons used in laser beam optical systems: air gap type and single plate type.
第５図は従来のエアギャップ型エタロンを模式的に示す
平面図であり、第６図は第５図の■−■綿断面断面図る
。第５図及び第６図において、ｌは石英ガラスの基板で
あり、基板１の一方の面の周縁部には等間隔でスペーサ
４が置設されている。FIG. 5 is a plan view schematically showing a conventional air gap type etalon, and FIG. 6 is a cross-sectional view taken along the line 1--2 in FIG. In FIGS. 5 and 6, reference numeral 1 denotes a quartz glass substrate, and spacers 4 are placed at equal intervals around the periphery of one surface of the substrate 1. In FIG.
該スペーサ４を介して基板１と所定長離隔し、しかも対
向する位置には前述と同様の基板１が設けられている。A substrate 1 similar to that described above is provided at a position facing and separated from the substrate 1 by a predetermined distance via the spacer 4 .
そして、基板１．１の対向している夫々の面、前記一方
の面には第４図に示した構造を有する誘電体の交互多層
反射膜３が夫々形成されている。また、基板１．１の交
互多層反射膜３゜３が形成されている面と反対の面、即
ち他方の面には略円形の反射防止！１＊２が夫々形成さ
れている。Alternating multilayer reflective films 3 made of dielectric material and having the structure shown in FIG. 4 are formed on each of the opposing surfaces of the substrate 1.1 and the one surface. Further, on the surface of the substrate 1.1 opposite to the surface on which the alternating multilayer reflective film 3.3 is formed, that is, on the other surface, there is a substantially circular anti-reflection film! 1*2 are formed respectively.
このような構造をなすエアギャップ型エタロンでは、エ
タロンに入射したレーザ光は対向する交互多層反射膜３
．３間で反射干渉する。In the air-gap etalon having such a structure, the laser beam incident on the etalon passes through the opposing alternating multilayer reflective film 3.
．． Reflection interference occurs between the three.
第７図は単板型エタロンを模式的に示す平面図であり、
第８図は単板型エタロンの模式的断面図である。第７図
及び第８図において１は略円形の石英ガラスの基板であ
り、基板ｌの両面には略円形の第４図に示した構造を有
する交互多層反射膜３が夫々設けられている。このよう
な構造をなす単板型エタロンではエタロンに入射したレ
ーザ光は交互多層の反射膜３．３間即ち、基板１の面間
で反射干渉する。従ってレーザ等の光学系でエアギャッ
プ型又は単板型のエタロンを用いエタロン内でレーザ光
を反射干渉させることにより、その帯域を更に狭くする
ことができる。FIG. 7 is a plan view schematically showing a single-plate etalon,
FIG. 8 is a schematic cross-sectional view of a single-plate etalon. In FIGS. 7 and 8, reference numeral 1 denotes a substantially circular quartz glass substrate, and on both surfaces of the substrate 1 are provided alternating multilayer reflective films 3 having the structure shown in FIG. 4, each having a substantially circular shape. In the single-plate etalon having such a structure, the laser light incident on the etalon is reflected and interfered between the alternate multilayer reflective films 3 and 3, that is, between the surfaces of the substrate 1. Therefore, the band can be further narrowed by using an air gap type or single plate type etalon in an optical system such as a laser and causing the laser beam to be reflected and interfered within the etalon.
［発明が解決しようとする課題］
上述した如く、従来のエタロンの多層反射膜では使用材
料及び膜構成の点では十分耐レーザ性を配慮した構造が
なされている。ところが、エタロンを実際にエキシマレ
ーザ等の光学系の所定部分に保持させて用いる場合では
以下の理由により上述した構造では不十分であることが
判明した。[Problems to be Solved by the Invention] As described above, the multilayer reflective film of the conventional etalon has a structure that sufficiently takes laser resistance into consideration in terms of the materials used and the film structure. However, when the etalon is actually used by being held in a predetermined part of an optical system such as an excimer laser, it has been found that the above-described structure is insufficient for the following reasons.
前述したようにエタロンはレーザ光の帯域をさらに狭く
するために設けられているので、反射干渉部分の狂いは
数１０Å以下に抑えて用いられており、従ってエタロン
を保持する材料がエタロンの特性に影響する。As mentioned above, the etalon is provided to further narrow the band of laser light, so the deviation of the reflection interference part is suppressed to less than a few tens of angstroms. Therefore, the material that holds the etalon depends on its characteristics. Affect.
一方、エキシマレーザのような短波長光はエネルギが高
いため、物質を活性化する作用があり、特に有機物は分
解されやすい。これらのことから一般にエタロンを保持
する材料には、化学的に安定であるフッ素樹脂が用いら
れている。また、フッ素樹脂は軟質であるため、エタロ
ンを変形させることなく保持することができる。しかし
ながら、フッ素樹脂を用いてもエキシマレーザ等の短波
長光によりわずかにフッ素が解離するので、反射膜の最
外層の二酸化シリコンとフッ素とが反応し、これが反射
膜のレーザ損傷の引き金となり、反射膜のレーザ耐性を
低下させることがわかった。On the other hand, short-wavelength light such as excimer laser has high energy, so it has the effect of activating substances, and organic substances are particularly easily decomposed. For these reasons, chemically stable fluororesin is generally used as the material for holding the etalon. Furthermore, since fluororesin is soft, it is possible to hold the etalon without deforming it. However, even when fluororesin is used, fluorine is slightly dissociated by short wavelength light such as excimer laser, so the silicon dioxide in the outermost layer of the reflective film reacts with fluorine, which triggers laser damage to the reflective film and causes the reflection It was found that this decreases the laser resistance of the film.
本発明は斯かる事情に鑑みてなされたものであり、最外
層としてフッ化物を含有する層を積層することにより高
いレーザ耐性を有し、長寿命の誘電体多層反射膜を提供
することを目的とする。The present invention has been made in view of the above circumstances, and an object thereof is to provide a dielectric multilayer reflective film with high laser resistance and long life by laminating a layer containing fluoride as the outermost layer. shall be.
〔課題を解決するための手段］
本発明に係る誘電体多層反射膜は基板上の酸化アルミニ
ウムと二酸化シリコンとを交互に複数積層した多層膜の
最外層としてフッ化物を含有する層を積層しであるもの
である。[Means for Solving the Problems] The dielectric multilayer reflective film according to the present invention is a multilayer film in which a layer containing fluoride is laminated as the outermost layer of a multilayer film in which aluminum oxide and silicon dioxide are alternately laminated on a substrate. It is something.
本発明の誘電体多層反射膜にあっては酸化アルミニウム
と酸化シリコンとを交互に複数積層した多層膜の最外層
としてフッ化物を含有する層を積層しであるので、レー
ザにより光部品の一部が分解されて生じたフッ素と誘電
体多層反射膜の最外層との反応を防ぐことができ、高い
レーザ耐性を有し、長寿命である誘電体多層反射膜が得
られる。In the dielectric multilayer reflective film of the present invention, a layer containing fluoride is laminated as the outermost layer of a multilayer film in which aluminum oxide and silicon oxide are alternately laminated. It is possible to prevent the reaction between fluorine produced by the decomposition of fluorine and the outermost layer of the dielectric multilayer reflective film, and thus a dielectric multilayer reflective film with high laser resistance and long life can be obtained.
以下、本発明をその実施例を示す図面に基づき具体的に
詳述する。第１図は本発明に係る誘電体多層反射膜の構
成を示す模式的断面図であり、図中１は石英ガラスの基
板を示している。基板１の上面には光学膜厚がＸ波長で
ある酸化アルミニウム層３１が積層されており、その上
面にはいずれも光学膜厚がＸ波長である二酸化シリコン
層３２．酸化アルミニウム層３１がこの順に１１回繰り
返して積層されている。さらに、これら積層されている
層の上面即ち、酸化アルミニウム層３１の上面には光学
膜厚がＸ波長の二酸化シリコン層３２ａ、やはり光学膜
厚が２波長のフッ化マグネシウム層３３がこの順に積層
形成されている。即ち、本実施例の誘電体多層反射膜は
酸化アルミニウム層３１と二酸化ジノコン層３２とを交
互に２４層積層形成した多層膜の最外層としてフッ化マ
グネシウム層３３を積層した構造を有している。第２図
は上述して得た誘電体多層反射膜の分光透過率を示した
スペクトル図であり、第３図は従来の誘電体多層反射膜
の分光透過率を示したスペクトル図である。第２図及び
第３図において線軸には透過率（％）が、横軸には波長
（ｎｍ）が夫々とっである。第２図及び第３図から明ら
かな如く、本実施例、従来例とも多層反射膜の中心波長
が２４８ｎｍ付近にＴｌＴｌ１認され、最外層としてフ
ッ化マグネシウム層を積層形成させることによる光学的
問題はないことが確認される。DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be specifically described in detail below based on drawings showing embodiments thereof. FIG. 1 is a schematic cross-sectional view showing the structure of a dielectric multilayer reflective film according to the present invention, and numeral 1 in the figure indicates a quartz glass substrate. An aluminum oxide layer 31 having an optical thickness of X wavelength is laminated on the upper surface of the substrate 1, and a silicon dioxide layer 32. Aluminum oxide layers 31 are repeatedly stacked in this order 11 times. Further, on the upper surface of these laminated layers, that is, on the upper surface of the aluminum oxide layer 31, a silicon dioxide layer 32a with an optical thickness of X wavelength and a magnesium fluoride layer 33 with an optical thickness of 2 wavelengths are laminated in this order. has been done. That is, the dielectric multilayer reflective film of this example has a structure in which a magnesium fluoride layer 33 is laminated as the outermost layer of a multilayer film in which 24 aluminum oxide layers 31 and 24 dinocon dioxide layers 32 are laminated alternately. . FIG. 2 is a spectral diagram showing the spectral transmittance of the dielectric multilayer reflective film obtained as described above, and FIG. 3 is a spectral diagram showing the spectral transmittance of the conventional dielectric multilayer reflective film. In FIGS. 2 and 3, the line axis represents transmittance (%), and the horizontal axis represents wavelength (nm). As is clear from FIGS. 2 and 3, in both this example and the conventional example, the center wavelength of the multilayer reflective film was found to be around 248 nm, and the optical problem caused by laminating the magnesium fluoride layer as the outermost layer was It is confirmed that there is no
また、本実施例で得られる多層反射膜の内部応力に関し
ては最外層の材料であるフッ化マグネシウムが引張り応
力を有し、最外層の下層の材料である二酸化シリコンが
圧縮応力を有するので、互いに応力を打ち消し合い理想
的な膜構成となっている。Regarding the internal stress of the multilayer reflective film obtained in this example, magnesium fluoride, which is the material of the outermost layer, has tensile stress, and silicon dioxide, which is the material of the lower layer of the outermost layer, has compressive stress. It has an ideal membrane structure that cancels out stress.
次にエタロンに本実施例の多層反射膜と従来の多層反射
膜とを夫々置設し、夫々のエタロンに波長が２４８ｎｍ
のエキシマレーザを１５ｍＪ、 ２００ｐｐｓの条件で
照射してレーザによる夫々の多層反射膜の損傷を調べた
。その結果、従来のエタロンの多層反射膜では１×１０
７シヨツトで損傷が発生したが、本実施例のエタロンの
多層反射膜では５ＸＩＯ’シヨツトまでｔ員傷が発生し
ないことがわかった。Next, the multilayer reflective film of this embodiment and the conventional multilayer reflective film were placed on each etalon, and a wavelength of 248 nm was applied to each etalon.
Damage to each multilayer reflective film caused by the laser was examined by irradiating with an excimer laser at 15 mJ and 200 pps. As a result, the multilayer reflective film of the conventional etalon has 1×10
Although damage occurred at 7 shots, it was found that no damage occurred up to 5XIO' shots in the multilayer reflective film of the etalon of this example.
また、本実施例の多層反射膜を有するエタロンをステッ
パ用エキシマレーザの狭帯域化素子に使用すると従来の
多層反射膜を有するエタロンに比べて約５０倍の長寿命
となった。Furthermore, when the etalon having the multilayer reflective film of this example was used as a band narrowing element for an excimer laser for a stepper, the life span was about 50 times longer than that of the conventional etalon having a multilayer reflective film.
なお、本実施例では誘電体の多層反射膜の最外層として
設けたフッ化マグネシウム層の光学膜厚を各波長とした
ので多層反射膜の異物質界面で最大電解強度となるのを
防ぐことができる。In this example, since the optical thickness of the magnesium fluoride layer provided as the outermost layer of the dielectric multilayer reflective film was set to each wavelength, it was possible to prevent the maximum electrolytic strength from occurring at the interface of a foreign material in the multilayer reflective film. can.
また、本実施例では多層反射膜の最外層のフッ化物にフ
ッ化マグネシウムを用いたが、これに代えてバリウム、
ストロンチウム、カルシウム等の■族元素のフッ化物を
用いることができる。そして、本発明の誘電体の多層反
射膜はエタロンの他に反射ミラー等の光学部品に利用す
ることができる。In addition, in this example, magnesium fluoride was used as the fluoride in the outermost layer of the multilayer reflective film, but barium,
Fluorides of Group I elements such as strontium and calcium can be used. The dielectric multilayer reflective film of the present invention can be used not only for etalons but also for optical components such as reflective mirrors.
〔発明の効果］
以上詳述した如く本発明に係る誘電体多層反射膜は基板
上の酸化アルミニウムと二酸化シリコンとを交互に複数
積層した多層膜の最外層としてフッ化物を含有する層を
積層しであるので、高いレーザ耐性を有することができ
、長寿命となる。[Effects of the Invention] As detailed above, the dielectric multilayer reflective film according to the present invention has a fluoride-containing layer laminated as the outermost layer of a multilayer film in which aluminum oxide and silicon dioxide are alternately laminated on a substrate. Therefore, it can have high laser resistance and has a long life.
また本発明に係る誘電体多層反射膜を有するエタロンを
ステッパ用エキシマレーザの狭帯域化素子に用いると、
前記誘電体多層反射膜が長寿命であるため、ステッパの
ランニングコストが大幅に下がり、半導体集積回路、特
に１６ＭＢのダイナミックランダムアクセスメモリ（Ｄ
ＲＡＭ）のコスト低下に寄与する等、本発明は優れた効
果を奏する。Furthermore, when the etalon having the dielectric multilayer reflective film according to the present invention is used as a band narrowing element of an excimer laser for a stepper,
Since the dielectric multilayer reflective film has a long life, the running cost of the stepper is significantly reduced, and it is suitable for semiconductor integrated circuits, especially 16MB dynamic random access memory (DRAM).
The present invention has excellent effects such as contributing to a reduction in the cost of RAM).
第１図は本発明の誘電体多層反射膜の構成を示す模式的
断面図、第２図は本発明の誘電体多層反射膜の分光透過
率を示したスペクトル図、第３図は従来の誘電体多層反
射膜の分光透過率を示したスペクトル図、第４図は従来
のエタロンの誘電体多層反射膜を模式的に示す構造断面
図、第５図は従来のエアギャップ型エタロンを模式的に
示す平面図、第６図は第５図のＶｌ−Ｖｌ線断面図、第
７図は単板型エタロンを模式的に示す平面図、第８図は
単板型エタロンの模式的断面図である。
■・・・基板 ３・・・反射膜 ３１・・・酸化アルミ
ニウム層 ３２・・・二酸化シリコン層 ３３・・・フ
ッ化物層なお、図中、同一符号は同一、又は相当部分を
示す。
代理人 大 岩 増 雄１：基板
３：反射膜
３に酸化アルミニウム層
３２二二酸化シリコン居
３３：フッ化物層
第
１ 図
図
図
図
図
図
手
続
補
正 書（自発）
騙１工１０□１６ＢFIG. 1 is a schematic cross-sectional view showing the structure of the dielectric multilayer reflective film of the present invention, FIG. 2 is a spectral diagram showing the spectral transmittance of the dielectric multilayer reflective film of the present invention, and FIG. 3 is a conventional dielectric multilayer reflective film. Figure 4 is a spectral diagram showing the spectral transmittance of a dielectric multilayer reflective film, Figure 4 is a structural cross-sectional view schematically showing a dielectric multilayer reflective film of a conventional etalon, and Figure 5 is a schematic diagram of a conventional air gap type etalon. 6 is a cross-sectional view taken along the line Vl-Vl in FIG. 5, FIG. 7 is a plan view schematically showing a single-plate etalon, and FIG. 8 is a schematic cross-sectional view of the single-plate etalon. . ■...Substrate 3...Reflection film 31...Aluminum oxide layer 32...Silicon dioxide layer 33...Fluoride layer Note that in the drawings, the same reference numerals indicate the same or corresponding parts. Agent Masuo Oiwa 1: Substrate 3: Reflective film 3 with aluminum oxide layer 32 silicon dioxide layer 33: Fluoride layer 1 Diagrams, diagrams, diagrams, diagrams, diagrams, procedures corrections (self-motivated), trick 1, 10□16B
Claims (1)
互に複数積層してなる誘電体多層反射膜において、 最外層としてフッ化物を含有する層を積層 してなることを特徴とする誘電体多層反射膜。(1) A dielectric multilayer reflective film formed by alternately laminating a plurality of aluminum oxides and silicon oxides on a substrate, characterized in that a layer containing fluoride is laminated as the outermost layer. film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP253589A JPH02182447A (en) | 1989-01-09 | 1989-01-09 | Dielectric multilayer reflecting film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP253589A JPH02182447A (en) | 1989-01-09 | 1989-01-09 | Dielectric multilayer reflecting film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02182447A true JPH02182447A (en) | 1990-07-17 |
Family
ID=11532077
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP253589A Pending JPH02182447A (en) | 1989-01-09 | 1989-01-09 | Dielectric multilayer reflecting film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02182447A (en) |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005114266A1 (en) * | 2004-05-24 | 2005-12-01 | Jenoptik Laser Optik Systeme Gmbh | High-reflecting dielectric mirror and method for the production thereof |
| DE102010017106A1 (en) * | 2010-05-27 | 2011-12-01 | Carl Zeiss Laser Optics Gmbh | Mirror with dielectric coating |
| JP2020525830A (en) * | 2017-07-03 | 2020-08-27 | テクノロギアン トゥトキムスケスクス ヴェーテーテー オイ | Microelectromechanical (MEMS) Fabry-Perot interferometer, apparatus, and method of manufacturing Fabry-Perot interferometer |
| EP3956604A4 (en) * | 2019-04-15 | 2022-06-08 | Lumus Ltd. | Method of fabricating a light-guide optical element |
| US11536975B2 (en) | 2017-03-22 | 2022-12-27 | Lumus Ltd. | Overlapping facets |
| US11543583B2 (en) | 2018-09-09 | 2023-01-03 | Lumus Ltd. | Optical systems including light-guide optical elements with two-dimensional expansion |
| US11543661B2 (en) | 2014-11-11 | 2023-01-03 | Lumus Ltd. | Compact head-mounted display system protected by a hyperfine structure |
| US11567316B2 (en) | 2016-10-09 | 2023-01-31 | Lumus Ltd. | Aperture multiplier with depolarizer |
| US11729359B2 (en) | 2019-12-08 | 2023-08-15 | Lumus Ltd. | Optical systems with compact image projector |
| US11747537B2 (en) | 2017-02-22 | 2023-09-05 | Lumus Ltd. | Light guide optical assembly |
| US11927734B2 (en) | 2016-11-08 | 2024-03-12 | Lumus Ltd. | Light-guide device with optical cutoff edge and corresponding production methods |
| US11994705B2 (en) | 2022-06-15 | 2024-05-28 | Lumus Ltd. | Light-guide optical element with multiple-axis internal aperture expansion |
-
1989
- 1989-01-09 JP JP253589A patent/JPH02182447A/en active Pending
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005114266A1 (en) * | 2004-05-24 | 2005-12-01 | Jenoptik Laser Optik Systeme Gmbh | High-reflecting dielectric mirror and method for the production thereof |
| DE102010017106A1 (en) * | 2010-05-27 | 2011-12-01 | Carl Zeiss Laser Optics Gmbh | Mirror with dielectric coating |
| JP2013529318A (en) * | 2010-05-27 | 2013-07-18 | カール ツァイス レーザー オプティクス ゲーエムベーハー | Dielectric coated mirror |
| US9297936B2 (en) | 2010-05-27 | 2016-03-29 | Carl Zeiss Laser Optics Gmbh | Mirror with dielectric coating |
| US11543661B2 (en) | 2014-11-11 | 2023-01-03 | Lumus Ltd. | Compact head-mounted display system protected by a hyperfine structure |
| US11567316B2 (en) | 2016-10-09 | 2023-01-31 | Lumus Ltd. | Aperture multiplier with depolarizer |
| US11927734B2 (en) | 2016-11-08 | 2024-03-12 | Lumus Ltd. | Light-guide device with optical cutoff edge and corresponding production methods |
| US11747537B2 (en) | 2017-02-22 | 2023-09-05 | Lumus Ltd. | Light guide optical assembly |
| US11536975B2 (en) | 2017-03-22 | 2022-12-27 | Lumus Ltd. | Overlapping facets |
| JP2020525830A (en) * | 2017-07-03 | 2020-08-27 | テクノロギアン トゥトキムスケスクス ヴェーテーテー オイ | Microelectromechanical (MEMS) Fabry-Perot interferometer, apparatus, and method of manufacturing Fabry-Perot interferometer |
| US11543583B2 (en) | 2018-09-09 | 2023-01-03 | Lumus Ltd. | Optical systems including light-guide optical elements with two-dimensional expansion |
| EP3956604A4 (en) * | 2019-04-15 | 2022-06-08 | Lumus Ltd. | Method of fabricating a light-guide optical element |
| US11729359B2 (en) | 2019-12-08 | 2023-08-15 | Lumus Ltd. | Optical systems with compact image projector |
| US11994705B2 (en) | 2022-06-15 | 2024-05-28 | Lumus Ltd. | Light-guide optical element with multiple-axis internal aperture expansion |
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