JPH02170486A - Semiconductor light-emitting device - Google Patents
Semiconductor light-emitting deviceInfo
- Publication number
- JPH02170486A JPH02170486A JP63323299A JP32329988A JPH02170486A JP H02170486 A JPH02170486 A JP H02170486A JP 63323299 A JP63323299 A JP 63323299A JP 32329988 A JP32329988 A JP 32329988A JP H02170486 A JPH02170486 A JP H02170486A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- layer
- multilayer film
- thickness
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 52
- 239000000758 substrate Substances 0.000 claims abstract description 8
- 238000010030 laminating Methods 0.000 claims abstract description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 11
- 238000009792 diffusion process Methods 0.000 abstract description 10
- 238000000034 method Methods 0.000 abstract description 4
- 230000010355 oscillation Effects 0.000 abstract description 3
- 238000000151 deposition Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000003776 cleavage reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/10—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector
- H01L33/105—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a light reflecting structure, e.g. semiconductor Bragg reflector with a resonant cavity structure
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、低しきい値の半導体レーザや、高効率の発光
ダイオードとして用いて好適な半導体発光装置に関する
。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor light emitting device suitable for use as a low threshold semiconductor laser or a high efficiency light emitting diode.
［従来の技術］
従来、活性層の上下に半導体多層膜を設ける構造が応用
物理、第５６巻、第１２号（１９８７）に示されている
。これは面発光型レーザであり、多層膜構造が主に誘導
放出光に対する共振器として用いられている。[Prior Art] Conventionally, a structure in which semiconductor multilayer films are provided above and below an active layer is shown in Oyoi Jitsu, Vol. 56, No. 12 (1987). This is a surface-emitting laser, and a multilayer film structure is mainly used as a resonator for stimulated emission light.
［発明が解決しようとする課題］
上記従来技術は、半導体多層膜を誘導放出光に対する反
射鏡、すなわち共振器に利用するものであった。従って
出射方向と平行な多層膜が存在せず、自然放出光の利用
効率が低いという問題がある。本発明は、半導体多層膜
を自然放出光の活性層への帰還のために用い、端面出射
型半導体発光装置の低しきい値化、あるいは高効率化を
目的とするものである。[Problems to be Solved by the Invention] The above-mentioned conventional technology utilizes a semiconductor multilayer film as a reflecting mirror for stimulated emission light, that is, as a resonator. Therefore, there is a problem that there is no multilayer film parallel to the emission direction, and the efficiency of utilizing spontaneously emitted light is low. The present invention uses a semiconductor multilayer film for returning spontaneously emitted light to an active layer, and aims at lowering the threshold voltage or increasing the efficiency of an edge-emitting type semiconductor light-emitting device.
［課題を解決するための手段］
上記目的は、活性層の上下若しくはさらに左右に光反射
を生せしめる半導体多層膜を形成することにより達成す
ることができ、自然放出光を有効活用し、発光素子の低
しきい値化あるいは高効率化が実現できる。[Means for Solving the Problems] The above object can be achieved by forming a semiconductor multilayer film that causes light reflection above and below the active layer or even on the left and right sides, and by effectively utilizing spontaneously emitted light, A lower threshold value or higher efficiency can be realized.
即ち、半導体発光装置において、活性層に隣接して、活
性層からの自然放出光を活性層に帰還するための半導体
多層膜を設けることにより上記目的は達成される。That is, in a semiconductor light emitting device, the above object is achieved by providing a semiconductor multilayer film adjacent to the active layer for returning spontaneously emitted light from the active layer to the active layer.
［作用］
活性層の上下に設けられた半導体多層膜は、自然放出光
を活性層に帰還させ、活性層のキャリアを励起させる（
フォトン・リサイクリング効果）ことができる。その結
果、低しきい値、あるいは高効率の発光素子が実現でき
る。また、膜厚方向し垂直をなす１方向の長さ、すなわ
ちストライプの長さを活性層の厚さよりも十分長くとれ
ば、ストライプ方向の誘導放出が強く生じ、端面から光
が出射されることになる。以上のように１本発明は多層
膜を誘導放出光に対する共振器として使う従来の面発光
レーザと原理・構造の点で大きく異るものである。[Function] The semiconductor multilayer film provided above and below the active layer returns spontaneously emitted light to the active layer and excites carriers in the active layer (
photon recycling effect). As a result, a light emitting element with a low threshold value or high efficiency can be realized. In addition, if the length in one direction perpendicular to the film thickness direction, that is, the length of the stripe, is made sufficiently longer than the thickness of the active layer, stimulated emission in the stripe direction will occur strongly, and light will be emitted from the end face. Become. As described above, the present invention differs greatly in principle and structure from conventional surface emitting lasers that use a multilayer film as a resonator for stimulated emission light.
［実施例］ 本発明の第１の実施例を第１図により説明する。[Example] A first embodiment of the present invention will be described with reference to FIG.
まず、本装置の作製方法について述べる。ｎ型ＧａＡｓ
基板１上に、ＭＯＣＶＤ法によりｎ−Ａ Ｍ、、、Ｇ
ａ、、、Ａ ｓとｎ−ＡＱＡｓをそれぞれλ／（４ｎ）
の厚さ（λは、発振波長、ｎは媒質の屈折率）で交互に
１０周期（図では模式的に３周期で表わした）積層し、
ｎ−多層膜反射鏡２を形成する。その後、 ｎ−Ａ ｎ
ｏ、、Ｇ ａ、、、Ａ ｓ光ガイド層３．ＧａＡｓ活性
層４（厚さ０．０５μｍ）、ｐ−Ａ Ｑ、、３０ ａ、
、、Ａ Ｓ光ガイドＮ５を形成した後、ｐ −Ａ Ｑ、
、、Ｇ ａ、、、Ａ ｓとｐ−ＡＱＡｓをそれぞれλ／
（４ｎ）の厚さで交互に１０周期積層しｐ−多層膜反射
！１６を形成し、さらにｐ−ＧａＡｓキャップＮ７を設
ける。つぎに、エツチングによりメサストライプを形成
した後、ＬＰＥ法を用いて、 ｐ−Ａ Ｑ、、、Ｇ ａ
、１Ａ ｓ埋込みＭ８とｎ−Ａｆｌ、、、Ｇａ。、４Ａ
ｓ埋込み暦９を設ける。その後、選択拡散により、Ｚｎ
拡散領域１０を形成し、最後に、Ｔｉ−Ｍｏ−Ａｕを蒸
着してｐｆＪ極１１を、ＡｎＧｅＮｉ−Ｃｒ−Ａｕを蒸
着してｎ電極１２を設けへき開により１００μｍの共振
器長をもつ半導体レーザ装置とした。本実施例において
、室温連続動作において０．５ｍＡ程度のしきい電流を
もつ半導体レーザが得られる。First, the method for manufacturing this device will be described. n-type GaAs
On the substrate 1, n-A M,...,G are formed by MOCVD method.
a, , A s and n-AQAs respectively as λ/(4n)
(where λ is the oscillation wavelength and n is the refractive index of the medium) and are alternately stacked in 10 periods (schematically represented as 3 periods in the figure).
An n-multilayer film reflecting mirror 2 is formed. After that, n-A n
o, ,G a, ,A s light guide layer 3. GaAs active layer 4 (thickness 0.05 μm), p-A Q, 30 a,
,, After forming the A S light guide N5, p −A Q,
, ,G a, ,A s and p-AQAs are respectively λ/
P-multilayer film reflective by laminating 10 cycles alternately with a thickness of (4n)! 16, and further a p-GaAs cap N7 is provided. Next, after forming a mesa stripe by etching, p-A Q, , Ga
, 1A s-embedded M8 and n-Afl,,,Ga. , 4A
s An embedded calendar 9 is provided. Then, by selective diffusion, Zn
A diffusion region 10 is formed, and finally, a pfJ pole 11 is formed by depositing Ti-Mo-Au, an n-electrode 12 is formed by depositing AnGeNi-Cr-Au, and the semiconductor laser device has a cavity length of 100 μm by cleavage. And so. In this example, a semiconductor laser having a threshold current of about 0.5 mA in continuous operation at room temperature can be obtained.
つぎに、本発明の第２の実施例について第２図により説
明する。ｎ型ＧａＡｓ基［２１上に、ＭＯＣＶＤ法によ
りｎ−Ａ Ｑｏ、２Ｇ ａ、、、Ａ ｓとｎ−ＡＱＡｓ
をそれぞれλ／（４ｎ）の厚さで交互に１０周期積層し
、ｎ−多層膜反射鏡２２を形成する。その後、ＧａＡｓ
活性層２３．そして、ｐ−Ａ Ｑｏ、、Ｇ ａａ、＠Ａ
ｓとｐ−ＡＱＡｓをそれぞれλ／（４ｎ）の厚さで交
互に１０周期積層し、ｐ−多層膜反射鏡２４を設け、ｐ
−Ｇ ａ Ａ ｓキャップ層２５を形成する。その後
、選択拡散により、Ｚｎ拡散領域２６を形成した後、Ｔ
ｉ−Ｍｏ−Ａ ｒ＋を蒸着してｐ電極２７を、ＡｎＧｅ
Ｎｉ−Ｃｒ−Ａｎを蒸着してｎ電極２８を設ける。最後
に。Next, a second embodiment of the present invention will be described with reference to FIG. On the n-type GaAs group [21, n-A Qo, 2G a, , As and n-AQAs were formed by MOCVD.
are alternately laminated for 10 periods each with a thickness of λ/(4n) to form an n-multilayer film reflecting mirror 22. After that, GaAs
Active layer 23. And p-A Qo,,G aa,@A
s and p-AQAs are alternately laminated for 10 periods each with a thickness of λ/(4n), and a p-multilayer film reflecting mirror 24 is provided.
- Form a GaAs cap layer 25. Thereafter, after forming a Zn diffusion region 26 by selective diffusion, T
The p-electrode 27 is formed by evaporating i-Mo-A r+, and the AnGe
An n-electrode 28 is provided by vapor depositing Ni-Cr-An. lastly.
前端面にＳｉｎ、膜をλ／（４ｎ）の厚さは着させるこ
とにより無反射コート膜２９を形成することで発光ダイ
オード装置とした０本実施例において高効率の発光ダイ
オードが得られる。In this embodiment, a highly efficient light emitting diode can be obtained as a light emitting diode device by forming a non-reflection coating film 29 by depositing a Sin film on the front end face to a thickness of λ/(4n).
つぎに１本発明の第３の実施例について第３図により説
明する。ｎ型ＧａＡｓ基板３１上に、ＭＢＥ法によりｎ
−Ａ Ｑ、、、Ｇ ａ、１Ａ ｓとｎ−ＡＱＡｓをそれ
ぞれλ／（４ｎ）の厚さで交互に１０周期積１し、ｎ−
多層膜反射！Ｉ３２を形成する。Next, a third embodiment of the present invention will be explained with reference to FIG. On the n-type GaAs substrate 31, n
-A Q, , Ga, 1A s and n-AQAs are each alternately multiplied 10 times with a thickness of λ/(4n), and n-
Multilayer reflection! Form I32.
次に、ｎ−Ａ Ｑ、、、Ｇ ａ、９．Ａ ｓ光ガイド層
３３、ＧａＡｓ活性潜３４（厚さ０．０５μｍ）、ｐ−
Ａ Ｑｏ、、Ｇ ａａ、７Ａ ｓ光ガイド層３５を形成
した後、ｐ−Ａ Ｑ、、２Ｇ ａ、、、Ａ ｓとｐ −
Ａ Ｑ Ａ ｓをそれぞれλ／（４ｎ）の厚さで交互に
ｌｏ周期積暦し、ｐ−多層膜反射鏡３６を形成し、さら
にｐ−ＧａＡｓキャップ層３７を設ける。つぎに、エツ
チングによりメサストライプを形成した後、再びＭＢＥ
法を用いて、高抵抗（ｉ−と略す）ＡＲｏ、ｚＧａ、、
、Ａｓと１−ＡＱＡｓをそれぞれλ／（４ｎ）の厚さで
交互に１０周期積層し、ｉ−多層膜反射鏡３８を形成し
、さらにｉ Ａ Ｒｇ、ｓＧ ａａ。Next, n-A Q, , Ga, 9. As optical guide layer 33, GaAs active layer 34 (thickness 0.05 μm), p-
After forming the light guide layer 35, p-A Q,,2G a,,,A s and p-
A Q A s is alternately repeated in lo cycles with a thickness of λ/(4n) to form a p-multilayer reflector 36, and further a p-GaAs cap layer 37 is provided. Next, after forming mesa stripes by etching, MBE is performed again.
Using the method, high resistance (abbreviated as i-) ARo, zGa, .
, As and 1-AQAs are alternately stacked in 10 periods with a thickness of λ/(4n) to form the i-multilayer reflector 38, and further i A Rg, sG aa.
Ａｓ埋込み層３９を設ける。その後１選択拡散により、
Ｚｎ拡散領域４０を形成し、最後に、Ｔｉ−Ｍｏ−Ａｕ
を蒸着してｐＨ極４極在１ＡｕＧｅＮｉ−Ｃｒ−Ａｕを
蒸着してｎ電極４２をそれぞれ設け、さらにへき開によ
り１００μｍの共振器長をもつ半導体レーザ装置とした
。本実施例において、室温連続動作において、０．２ｍ
Ａ程度のしきい電流をもっ半導１体レーザが得られる。An As buried layer 39 is provided. After that, by one-choice diffusion,
A Zn diffusion region 40 is formed, and finally a Ti-Mo-Au
was vapor-deposited, and 4 pH poles and 1 AuGeNi-Cr-Au were vapor-deposited to provide n-electrodes 42, respectively, and further cleaved to form a semiconductor laser device having a resonator length of 100 μm. In this example, in continuous operation at room temperature, 0.2 m
A single-semiconductor laser having a threshold current of approximately A is obtained.
本発明はＡ Ｑ Ｇ ａ Ａ ｓ ／ Ｇ ａ Ａ ｓ
に限らず、他のレーザ材料、例えば、ＩｎＧａＡｓＰ／
ＩｎＰ系やＩｎＧａＡＱＰ／ＧａＡｓ系に対しても同様
に適用できる。さらに活性層が量子井戸構造をしている
ものに対しても有効であり、また上記実施例において導
電型を全て反射にした構造においても同様の結果が得ら
れた。The present invention is A Q Ga As / Ga As
However, other laser materials such as InGaAsP/
It can be similarly applied to InP and InGaAQP/GaAs systems. Furthermore, it is also effective for a structure in which the active layer has a quantum well structure, and similar results were obtained in the structure in which all conductivity types are reflective in the above embodiments.
最後に、本発明の第４の実施例について第４図により説
明する０通常のしきいＩｌ［（１０〜５０ｍＡ）を有す
る半導体レーザ５１を直接変調する場合、図のように、
バイアスするための定電流源５４やバイアス５３を必要
とする。本発明の半導体レーザは極めてしきい電流が低
いため、無バイアスで駆動することができ、定電流源５
４やバイアスＴＥＥが不要である。さらに無バイアスで
あるため２発振遅れ時間が短い。本実施例の無バイアス
送信システムにより、２．４０ｂｉｔ／ｓのＮＲｚ４＝
号の駆動により、それに対応した変調信号が得られる。Finally, the fourth embodiment of the present invention will be explained with reference to FIG.
A constant current source 54 and bias 53 are required for biasing. Since the semiconductor laser of the present invention has an extremely low threshold current, it can be driven without bias, and the constant current source 5
4 and bias TEE are not required. Furthermore, since there is no bias, the delay time between two oscillations is short. With the non-bias transmission system of this embodiment, NRz4=2.40bit/s
By driving the signal, a corresponding modulation signal is obtained.
［発明の効果］
本発明によれば、活性層の上下方向に出射される自然放
出光を有効利用できるので、端面発光型の半導体レーザ
の低しきい値化や発光ダイオードの高効率化に効果があ
る。[Effects of the Invention] According to the present invention, spontaneous emission light emitted in the vertical direction of the active layer can be effectively used, which is effective in lowering the threshold value of edge-emitting semiconductor lasers and increasing the efficiency of light-emitting diodes. There is.
第１図は本発明による半導体発光装置の第１の実施例を
示す模式図、第２図は本発明による半導体発光装置の第
２の実施例を示す模式図、第３図は本発明による半導体
発光装置の第３の実施例を示す断面図、第４図は本発明
のシステムの実施例に関する回路の説明図である。
符号の説明
１・・・ｎ基板、２・・・ｎ−多層膜反射鏡、３・・・
ｎ−光ガイド層、４・・・活性層、５・・・ｐ光ガイド
層、６・・・ｐ−多層膜反射鏡、７・・・ｐ−キャップ
層、８・・・ｐ−理込み層、９・・・ｎ−理込み層、１
ｏ・・・拡散領域、１１− ｐ ’ｉｌｉ極、１２−
ｎ電極、２１−ｎ−基板、２２・・・ｎ多層膜反射鏡、
２３・・・活性層、２４・・・ｐ−多層膜反射鏡、２５
・・・ｐ−キャップ層、２６・・・拡散領域、２７・・
・ｐ？ｌ極、２８・・・ｎ電極、２９・・・無反射コー
ト膜。３１・・・ｎ−基板、３２・・・ｎ−多層膜反射
鏡、３３・・・ｎ−光ガイド層、３４・・・活性層、３
５・・・ｐ−光ガイド層、３６・・・Ｐ−多層膜反射鏡
、３７・・・ｐ−キャップ層、３８・・・ｉ−多層膜反
射鏡、３９・・・ｉ−理込み暦、４０・・・拡散領域、
４１・ｐｆｒ１極、４２・・・ｎ電極。５１半導体レー
ザ、５２・・・マツチング抵抗、５３・・・バイアスＴ
ＥＥ、５４・定電流源、５５−・・パルスパターン発生
器。
第３国FIG. 1 is a schematic diagram showing a first embodiment of a semiconductor light emitting device according to the present invention, FIG. 2 is a schematic diagram showing a second embodiment of a semiconductor light emitting device according to the present invention, and FIG. 3 is a schematic diagram showing a semiconductor light emitting device according to the present invention. A sectional view showing a third embodiment of the light emitting device, and FIG. 4 is an explanatory diagram of a circuit related to an embodiment of the system of the present invention. Explanation of symbols 1...n substrate, 2...n-multilayer film reflecting mirror, 3...
n-light guide layer, 4... active layer, 5... p-light guide layer, 6... p-multilayer film reflector, 7... p-cap layer, 8... p-rikumo Layer, 9...n-rational layer, 1
o...diffusion region, 11-p'ili pole, 12-
n electrode, 21-n-substrate, 22...n multilayer film reflecting mirror,
23... Active layer, 24... P-multilayer film reflecting mirror, 25
...p-cap layer, 26...diffusion region, 27...
・p? L pole, 28...N electrode, 29...Non-reflective coating film. 31...n-substrate, 32...n-multilayer film reflecting mirror, 33...n-light guide layer, 34...active layer, 3
5...p-light guide layer, 36...P-multilayer film reflector, 37...p-cap layer, 38...i-multilayer film reflector, 39...i-rational calendar , 40...diffusion area,
41・pfr1 pole, 42...n electrode. 51 semiconductor laser, 52... matching resistor, 53... bias T
EE, 54-constant current source, 55--pulse pattern generator. third country
Claims (1)
該第１半導体層より屈折率の大きな第２半導体層を周期
的に積層してなる第１半導体多層膜と、第３半導体層と
該第３半導体層より屈折率の大きな第４半導体層を周期
的に積層してなる第２半導体多層膜、および上記第１半
導体多層膜と第２半導体多層膜の間に設けられ上記第１
、第２、第３、第４半導体層より屈折率が大きくかつ禁
制帯幅の小さい第５半導体層から成り、膜厚方向と垂直
な一方向において、該第５半導体層の２つの面が平行に
向い合い、その面間の距離が、該第５半導体層の膜厚よ
りも大きいことを特徴とする半導体発光装置。 ２、特許請求の範囲第１項記載の半導体発光装置におい
て、前記第１、第２、第３、第４半導体層のそれぞれの
厚さが、半導体内での発光中心波長の４分の１程度であ
ることを特徴とする半導体発光装置。 ３、特許請求の範囲第１項または第２項記載の半導体発
光装置において、前記半導体基板、前記第１及び第２半
導体層が第１導電型であり、前記第３及び第４半導体層
が第２導電型であることを特徴とする半導体発光装置。[Claims] 1. A first semiconductor multilayer film formed by periodically laminating at least a first semiconductor layer and a second semiconductor layer having a higher refractive index than the first semiconductor layer on a predetermined semiconductor substrate; a second semiconductor multilayer film formed by periodically laminating a third semiconductor layer and a fourth semiconductor layer having a higher refractive index than the third semiconductor layer; and a second semiconductor multilayer film provided between the first semiconductor multilayer film and the second semiconductor multilayer film. 1st above
, a fifth semiconductor layer having a larger refractive index and a smaller forbidden band width than the second, third, and fourth semiconductor layers, and two planes of the fifth semiconductor layer are parallel in one direction perpendicular to the film thickness direction. A semiconductor light emitting device characterized in that the distance between the surfaces facing each other is greater than the thickness of the fifth semiconductor layer. 2. In the semiconductor light emitting device according to claim 1, each of the first, second, third, and fourth semiconductor layers has a thickness of approximately one-fourth of the emission center wavelength within the semiconductor. A semiconductor light emitting device characterized by: 3. In the semiconductor light emitting device according to claim 1 or 2, the semiconductor substrate, the first and second semiconductor layers are of a first conductivity type, and the third and fourth semiconductor layers are of a first conductivity type. A semiconductor light emitting device characterized by being of two conductivity types.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63323299A JPH02170486A (en) | 1988-12-23 | 1988-12-23 | Semiconductor light-emitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63323299A JPH02170486A (en) | 1988-12-23 | 1988-12-23 | Semiconductor light-emitting device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02170486A true JPH02170486A (en) | 1990-07-02 |
Family
ID=18153233
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63323299A Pending JPH02170486A (en) | 1988-12-23 | 1988-12-23 | Semiconductor light-emitting device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02170486A (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5244749A (en) * | 1992-08-03 | 1993-09-14 | At&T Bell Laboratories | Article comprising an epitaxial multilayer mirror |
| US5260589A (en) * | 1990-11-02 | 1993-11-09 | Norikatsu Yamauchi | Semiconductor device having reflecting layers made of varying unit semiconductors |
| US5264715A (en) * | 1992-07-06 | 1993-11-23 | Honeywell Inc. | Emitting with structures located at positions which prevent certain disadvantageous modes and enhance generation of light in advantageous modes |
| WO1996002949A1 (en) * | 1994-07-15 | 1996-02-01 | The Whitaker Corporation | Semi-insulating surface light emitting devices |
| US5537433A (en) * | 1993-07-22 | 1996-07-16 | Sharp Kabushiki Kaisha | Semiconductor light emitter |
| US5789772A (en) * | 1994-07-15 | 1998-08-04 | The Whitaker Corporation | Semi-insulating surface light emitting devices |
| JPH10229243A (en) * | 1997-02-18 | 1998-08-25 | Hitachi Ltd | Organic light emitting element |
| WO2001022545A1 (en) * | 1999-09-22 | 2001-03-29 | Mitsubishi Chemical Corporation | Luminous element and luminous element module |
| JP2008235691A (en) * | 2007-03-22 | 2008-10-02 | Anritsu Corp | Semiconductor light emitting element |
| JP2013005115A (en) * | 2011-06-14 | 2013-01-07 | Rohm Co Ltd | Radio transmission apparatus |
-
1988
- 1988-12-23 JP JP63323299A patent/JPH02170486A/en active Pending
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5260589A (en) * | 1990-11-02 | 1993-11-09 | Norikatsu Yamauchi | Semiconductor device having reflecting layers made of varying unit semiconductors |
| US5264715A (en) * | 1992-07-06 | 1993-11-23 | Honeywell Inc. | Emitting with structures located at positions which prevent certain disadvantageous modes and enhance generation of light in advantageous modes |
| US5244749A (en) * | 1992-08-03 | 1993-09-14 | At&T Bell Laboratories | Article comprising an epitaxial multilayer mirror |
| US5537433A (en) * | 1993-07-22 | 1996-07-16 | Sharp Kabushiki Kaisha | Semiconductor light emitter |
| WO1996002949A1 (en) * | 1994-07-15 | 1996-02-01 | The Whitaker Corporation | Semi-insulating surface light emitting devices |
| US5789772A (en) * | 1994-07-15 | 1998-08-04 | The Whitaker Corporation | Semi-insulating surface light emitting devices |
| JPH10229243A (en) * | 1997-02-18 | 1998-08-25 | Hitachi Ltd | Organic light emitting element |
| WO2001022545A1 (en) * | 1999-09-22 | 2001-03-29 | Mitsubishi Chemical Corporation | Luminous element and luminous element module |
| EP1146615A1 (en) * | 1999-09-22 | 2001-10-17 | Mitsubishi Chemical Corporation | Luminous element and luminous element module |
| EP1146615A4 (en) * | 1999-09-22 | 2005-10-19 | Mitsubishi Chem Corp | Luminous element and luminous element module |
| US7102174B2 (en) | 1999-09-22 | 2006-09-05 | Mitsubishi Chemical Corporation | Light emitting device and light emitting device module |
| US7164157B2 (en) | 1999-09-22 | 2007-01-16 | Mitsubishi Chemical Corporation | Light emitting device and light emitting device module |
| JP2008235691A (en) * | 2007-03-22 | 2008-10-02 | Anritsu Corp | Semiconductor light emitting element |
| JP2013005115A (en) * | 2011-06-14 | 2013-01-07 | Rohm Co Ltd | Radio transmission apparatus |
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