JPH0216775A - Manufacture of metal sulfide semiconductor composite film - Google Patents
Manufacture of metal sulfide semiconductor composite filmInfo
- Publication number
- JPH0216775A JPH0216775A JP63167058A JP16705888A JPH0216775A JP H0216775 A JPH0216775 A JP H0216775A JP 63167058 A JP63167058 A JP 63167058A JP 16705888 A JP16705888 A JP 16705888A JP H0216775 A JPH0216775 A JP H0216775A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- composite film
- film
- porous polymer
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002131 composite material Substances 0.000 title claims description 19
- 239000004065 semiconductor Substances 0.000 title claims description 19
- 229910052976 metal sulfide Inorganic materials 0.000 title claims description 12
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 229910052751 metal Inorganic materials 0.000 claims abstract description 11
- 239000002184 metal Substances 0.000 claims abstract description 11
- 238000007772 electroless plating Methods 0.000 claims abstract description 8
- 229920006254 polymer film Polymers 0.000 claims abstract description 7
- 238000005987 sulfurization reaction Methods 0.000 claims description 3
- 238000007747 plating Methods 0.000 abstract description 8
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 abstract description 6
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 abstract description 6
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 abstract description 4
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 abstract description 3
- 239000011593 sulfur Substances 0.000 abstract description 3
- 229910052717 sulfur Inorganic materials 0.000 abstract description 3
- 239000003638 chemical reducing agent Substances 0.000 abstract description 2
- 239000008139 complexing agent Substances 0.000 abstract description 2
- 229910000365 copper sulfate Inorganic materials 0.000 abstract description 2
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 abstract description 2
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 abstract 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 abstract 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 abstract 1
- RZEMOZGCDJJSLV-UHFFFAOYSA-N [S].CS(C)=O Chemical compound [S].CS(C)=O RZEMOZGCDJJSLV-UHFFFAOYSA-N 0.000 abstract 1
- 239000003513 alkali Substances 0.000 abstract 1
- 238000006555 catalytic reaction Methods 0.000 abstract 1
- 230000008021 deposition Effects 0.000 abstract 1
- 238000007598 dipping method Methods 0.000 abstract 1
- 229910052708 sodium Inorganic materials 0.000 abstract 1
- 239000011734 sodium Substances 0.000 abstract 1
- OMZSGWSJDCOLKM-UHFFFAOYSA-N copper(II) sulfide Chemical compound [S-2].[Cu+2] OMZSGWSJDCOLKM-UHFFFAOYSA-N 0.000 description 9
- 238000010586 diagram Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 239000010949 copper Substances 0.000 description 5
- 238000007654 immersion Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000002861 polymer material Substances 0.000 description 3
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 230000003197 catalytic effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 229920005597 polymer membrane Polymers 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000005355 Hall effect Effects 0.000 description 1
- 241000026407 Haya Species 0.000 description 1
- 241000609789 Kobus vardonii Species 0.000 description 1
- 206010070834 Sensitisation Diseases 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000000084 colloidal system Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000008188 pellet Substances 0.000 description 1
- 229920000098 polyolefin Polymers 0.000 description 1
- LJCNRYVRMXRIQR-OLXYHTOASA-L potassium sodium L-tartrate Chemical compound [Na+].[K+].[O-]C(=O)[C@H](O)[C@@H](O)C([O-])=O LJCNRYVRMXRIQR-OLXYHTOASA-L 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000000634 powder X-ray diffraction Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 230000008313 sensitization Effects 0.000 description 1
- 239000001476 sodium potassium tartrate Substances 0.000 description 1
- 235000011006 sodium potassium tartrate Nutrition 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000004753 textile Substances 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は電気デバイス装置を制御する半導体として使
用される金属硫化物半導体複合膜の製造法に関するもの
である。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a method for manufacturing a metal sulfide semiconductor composite film used as a semiconductor for controlling electrical devices.
金属硫化物はすぐれた光伝導性を有する化合物半導体で
あることが知られており、光検出器や太陽電池などの分
野に応用されている。Metal sulfides are known to be compound semiconductors with excellent photoconductivity, and are used in fields such as photodetectors and solar cells.
ところが、それらの金属硫化物は一般に成形性に劣り、
強度が弱いなどの欠点を有している。However, these metal sulfides generally have poor formability;
It has drawbacks such as low strength.
しかし、これらの金属硫化物を高分子材料中に埋め込め
ばフレキシブルにして丈夫な半導体複合膜ができると予
想される。However, it is expected that embedding these metal sulfides in polymeric materials will result in flexible and durable semiconductor composite films.
この場合、金属硫化物半導体としての性質が複合膜にお
いても保たれるかどうかが問題である。In this case, the question is whether the properties as a metal sulfide semiconductor are maintained in the composite film.
いままでに各種硫化物コロイドを高分子材料中に分散さ
せた複合膜については半導体性が確認されているし、ま
た、高分子材料の表面上に金属塩を吸、収させた後に硫
化処理する方法も試みられているか、これらの従来の半
導体膜は使用できる溶媒や高分子材料が限定されるとい
う問題を有している。Semiconducting properties have so far been confirmed for composite films in which various sulfide colloids are dispersed in polymer materials, and metal salts are absorbed onto the surface of the polymer material and then sulfurized. However, these conventional semiconductor films have the problem that the solvents and polymer materials that can be used are limited.
発明者らは特に支持体、マトリックスに限定されること
なく金属硫化物半導体を担持することができ、そして容
易に大面積化が可能な方法がないかと研究し、多孔質高
分子膜に無電解メッキを行い、その後硫化処理する本発
明を完成した。In particular, the inventors investigated whether there is a method that can support metal sulfide semiconductors without being limited to supports or matrices, and that can easily increase the area. The present invention, which involves plating and then sulfiding, has been completed.
本発明は、前記諸問題を解決したもので、添付図面を参
照して詳述すると、多孔質高分子膜を基板１とし、この
基板１に無電解メッキを施して金属を担持させ、この金
属層２に硫化処理を施すことを特徴とする金属硫化物半
導体複合膜の製造法に係るものである。The present invention has solved the above-mentioned problems, and will be described in detail with reference to the accompanying drawings.The present invention uses a porous polymer membrane as a substrate 1, performs electroless plating on this substrate 1 to support a metal, and The present invention relates to a method for producing a metal sulfide semiconductor composite film, characterized in that layer 2 is subjected to sulfurization treatment.
基板ｌを多孔質高分子膜で形成し、この多孔質高分子膜
に無電解メッキを施して金属を担持させ、基板ｌの表面
に金属層２を形成するから金属層２は一部が多孔質高分
子膜に喰い込んだ状態となり、確固に被着されることに
なる。The substrate 1 is formed of a porous polymer film, and the porous polymer film is subjected to electroless plating to support metal, and the metal layer 2 is formed on the surface of the substrate 1. Therefore, the metal layer 2 is partially porous. It becomes embedded in the high quality polymer film and firmly adheres to it.
また無電解メッキを採用するから材質に制約されずに多
孔質高分子膜へのメッキ層の形成も硫化処理も可能とな
り、金属硫化物半導体が表面に均一に形成された金属硫
化物半導体複合膜が作成され、これをダイオードのよう
な電気デバイスに応用したところ整流特性の見られる素
子であることが確認された。In addition, since electroless plating is used, it is possible to form a plating layer on a porous polymer membrane and perform sulfurization treatment without being restricted by the material, and the metal sulfide semiconductor composite film has a metal sulfide semiconductor uniformly formed on the surface. was created, and when it was applied to electrical devices such as diodes, it was confirmed that the device had rectifying properties.
〔実施例〕
第１図は本発明の製造法のフローチャートを示したもの
で、このフローチャートにおいて用いられた溶液の組成
は次の通りである。[Example] FIG. 1 shows a flowchart of the production method of the present invention, and the composition of the solution used in this flowchart is as follows.
本発明者らは次の実験を行った。The present inventors conducted the following experiment.
無電解メッキに用いられた基板はハイボア２０００若し
くはｔｏｏｏ （ポリオレフィン系多孔質膜、脂化成製
）又はセルロース紙（東洋濾紙株式会社製−般定性用濾
紙）を用いた。The substrate used for the electroless plating was Hibore 2000 or Tooo (polyolefin porous membrane, manufactured by Seikasei) or cellulose paper (filter paper for general determination manufactured by Toyo Roshi Co., Ltd.).
この基板の物性値は下表の通りである。The physical properties of this substrate are shown in the table below.
ＣｕＳ複合体膜の作製方法は以下の手順で行った。The CuS composite film was produced using the following procedure.
まず基板は予めアセトンで脱脂した後にＡｇを付与する
触媒化処理を行った。First, the substrate was previously degreased with acetone and then subjected to a catalytic treatment to add Ag.
この触媒化処理は、０．１３Ｍ（モル）の５ｎＣＩｔ水
溶液（４０°Ｃ）に浸漬する感応化処理と、その後５．
９ｍＭのＡｇＮ０＊ （４０°Ｃ）に浸漬することによ
りＡｇを析出する次式の活性化行程の２行程で行った。This catalytic treatment consists of a sensitization treatment by immersion in a 0.13 M (mol) 5nCIt aqueous solution (40°C), and then 5.
This was carried out in two steps: an activation step according to the following formula, in which Ag was precipitated by immersion in 9 mM AgN0* (40° C.).
２Ａｇ”＋ Ｓｎ” →２Ａｇ＋ Ｓ ｎ’″″続い
て硫酸銅による無電解メッキを行った。2Ag"+Sn"→2Ag+Sn'""Subsequently, electroless plating with copper sulfate was performed.
還元剤にホルムアルデヒドを、錯化剤に酒石酸ナトリウ
ムカリウムを用い、メッキ浴６０℃でアルカリメッキに
より行った。Alkaline plating was carried out at a plating bath of 60° C. using formaldehyde as a reducing agent and sodium potassium tartrate as a complexing agent.
反応は次式の通りである。The reaction is as shown in the following equation.
Ｃｕ”＋２ＨＣＨＯ＋４０Ｈ−−” Ｃｕ＋Ｈｔ＋２
ＨＣＯＯ−硫化物処理は、ジメチルスルホキシドに硫黄
（５ｇ／１ｇ）を溶かし、この硫黄のジメチルスルホキ
シド溶液（７０℃）に浸漬することによって行った。Cu"+2HCHO+40H--"Cu+Ht+2
HCOO-sulfide treatment was performed by dissolving sulfur (5 g/1 g) in dimethyl sulfoxide and immersing it in a solution of sulfur in dimethyl sulfoxide (70° C.).
第２図はメッキ時間と硫化処理後の硫化銅含有ｍ依存性
を示したもので、０から４０分程度までは時間経過と共
に含有量は増加するがそれ以降は膜から剥離する傾向が
見られ、ある一定置上しか含有量が増加しないことがわ
かる。Figure 2 shows the dependence of copper sulfide content on plating time and m after sulfiding treatment.The content increases with time from 0 to about 40 minutes, but after that it tends to peel off from the film. , it can be seen that the content increases only at a certain temperature.
このようにして得られた複合膜のホール効果の測定を行
いキャリアおよび移動度を決定した。The Hall effect of the thus obtained composite film was measured to determine carriers and mobility.
この結果は下表の通りである。The results are shown in the table below.
表中のベレットとはＣｕＳ粉末を加圧成形したものであ
る。The pellet in the table is formed by pressure molding CuS powder.
その結果からｐ型半導体であり、ペレットのものより２
から３桁程度低い伝導度および移動度であることが確認
された。The results show that it is a p-type semiconductor, and it is 2
It was confirmed that the conductivity and mobility were about 3 orders of magnitude lower than that of the previous study.
上記の方法により作成した複合膜の同定はＸ線回折法で
行″った。The composite membrane prepared by the above method was identified by X-ray diffraction.
第３図はハイボア２０００に銅および硫化銅を担持した
複合膜の粉末Ｘ線回折である。FIG. 3 shows powder X-ray diffraction of a composite film in which copper and copper sulfide are supported on HiBore 2000.
Ｃｕの回折線（２θ＝４３．３°、５０．４°）がＣｕ
Ｓ担持複合膜の回折図から見られなかった（上図のピー
クが下図に現れてない）ことから、全てのＣｕがＣｕＳ
に変換されたものと推定される。The diffraction lines of Cu (2θ=43.3°, 50.4°)
Since it was not seen in the diffraction diagram of the S-supported composite film (the peak in the upper figure does not appear in the lower figure), all Cu was CuS.
It is estimated that it was converted into .
第４図は硫化銅複合膜の導電率の温度依存性を示すもの
で、温度を３５℃から１００℃に上昇するにつれて電気
導電度が１．５８Ｘ １Ｏ−３Ｓ／ ｃｍから２．４Ｉ
Ｘ １０−３８／ａｍに増加していることがわかる。Figure 4 shows the temperature dependence of the electrical conductivity of the copper sulfide composite film. As the temperature increases from 35°C to 100°C, the electrical conductivity increases from 1.58X 1O-3S/cm to 2.4I
It can be seen that the value increases to X 10-38/am.
このことから半導体物性を有することが確認できる。This confirms that it has semiconductor physical properties.
一般に硫化銅はｎ型半導体として知られており、この複
合膜とｎ型半導体とを接触することによって整流特性を
示すデバイスが作成出来ると推論し、次の確認を行った
。Copper sulfide is generally known as an n-type semiconductor, and we deduced that a device exhibiting rectifying characteristics could be created by contacting this composite film with an n-type semiconductor, and the following confirmation was made.
硫化カドミウムを電着したＩＴＯ（インジウム錫酸化物
）ガラスと硫化銅複合膜を圧着した第５図のセルを作成
し、ｉ −Ｖ特性の測定を行った。A cell as shown in FIG. 5 was prepared in which a copper sulfide composite film was bonded to ITO (indium tin oxide) glass on which cadmium sulfide was electrodeposited, and its i-V characteristics were measured.
その結果は第６図の図表で、整流比（−４ｖと＋４Ｖと
の電流値の比）は１：４程度の整流素子が得られること
を確認した。The results are shown in the graph of FIG. 6, and it was confirmed that a rectifying element with a rectifying ratio (ratio of current values of -4V and +4V) of about 1:4 was obtained.
■特性図に若干の乱れが生じている原因についてはＣｕ
Ｓ複合膜とＣｄ５１ｉ着層との接触が不十分のためと考
えられる。■As for the cause of the slight disturbance in the characteristic diagram,
This is thought to be due to insufficient contact between the S composite film and the Cd51i deposited layer.
本発明は上述のように構成したから半導体膜が基板に確
固に被着され、且つ基板の材質に制約されることのない
フレキシブルな半導体が簡易に量産でき、電気素子とし
て多方面に応用できる秀れた特長を発揮する。Since the present invention is constructed as described above, a semiconductor film can be firmly adhered to a substrate, and flexible semiconductors can be easily mass-produced without being restricted by the material of the substrate. Demonstrates its unique characteristics.
図面は本発明の一実施例を示すもので、第１図は本発明
の製造法のフローチャート、第２図はメッキ時間に対す
る含有量の依存性カーブを示す図表、第３図はＣｕとＣ
ｕＳのＸ線回折図、第４図はＣｕＳ複合膜の導電率の温
度依存性を示した図表、第５図はデバイスのセルの説明
略図、第６図はそのセルの特性を示す図表である。
１・・・基板、・２・・・金属層。
昭和６３年 ７月 ５日
出願人 早川繊維工業株式会社
発明者 三 山 創
同 横 山 英 部間
野 坂 芳 椎間 藤
井 信 行間 早
川 敏 男代理人 吉 井 昭
栄
Ａへ９
７７４月
２Ａｇ’＋５ｎ２−−−−２Ａｇ ＋Ｓｎ”↓
圃５Ｔり困
Ｃｕ”＋２）（ＣＨＯ＋４０Ｈ−→ Ｃｕ＋Ｈ＝ ＋２
８ＣＯＯ−↓
圓扇田
ＴＭｆｌｔ （５ｃｙ／ ｌ ） ＤＭＳ Ｏ溶渣ニ
浸漬口
ｉｎ
゛プ０ａ
２θｌｄｅｇｌ ｊｃｕ−に−）
−１１／頻
″ｙ％１５ｉ、、４
プク部
手続補装置（方式）
％式％
発明の名称
金属硫化物半導体複合膜の製造法
補正をする者
事件との関係The drawings show one embodiment of the present invention, and FIG. 1 is a flowchart of the manufacturing method of the present invention, FIG. 2 is a diagram showing the dependence curve of content on plating time, and FIG. 3 is a diagram showing the dependence curve of content on plating time.
An X-ray diffraction diagram of uS, Figure 4 is a diagram showing the temperature dependence of the conductivity of the CuS composite film, Figure 5 is a schematic illustration of the device cell, and Figure 6 is a diagram showing the characteristics of the cell. . 1...Substrate, 2...Metal layer. July 5, 1988 Applicant: Hayakawa Textile Industry Co., Ltd. Inventor: Sodo Miyama Hide Yokoyama Buma
Yoshi Nosaka Fuji Shiima
Nobuo I, Haya Yukima
Satoshi Kawa Male agent Akira Yoshii
To Sakae A 9 77 April 2Ag'+5n2---2Ag +Sn"↓ Field 5T difficulty Cu"+2) (CHO+40H-→ Cu+H= +2
8COO-↓ Ensugida TMflt (5cy/l) DMS O molten immersion port in ゛pu0a 2θldegl jcu-ni-) -11/Frequency"y%15i,, 4 Puku section procedure auxiliary device (method) % formula% Title of the invention Relationship to the case concerning a person amending the manufacturing method of a metal sulfide semiconductor composite film
Claims (1)
施して金属を担持させ、この金属層に硫化処理を施すこ
とを特徴とする金属硫化物半導体複合膜の製造法。A method for producing a metal sulfide semiconductor composite film, which comprises using a porous polymer film as a substrate, electroless plating the substrate to support a metal, and subjecting the metal layer to sulfurization treatment.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63167058A JPH0216775A (en) | 1988-07-05 | 1988-07-05 | Manufacture of metal sulfide semiconductor composite film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63167058A JPH0216775A (en) | 1988-07-05 | 1988-07-05 | Manufacture of metal sulfide semiconductor composite film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0216775A true JPH0216775A (en) | 1990-01-19 |
Family
ID=15842621
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63167058A Pending JPH0216775A (en) | 1988-07-05 | 1988-07-05 | Manufacture of metal sulfide semiconductor composite film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0216775A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001160425A (en) * | 1999-12-02 | 2001-06-12 | Japan Gore Tex Inc | Optical semiconductor electrode and its manufacturing method |
-
1988
- 1988-07-05 JP JP63167058A patent/JPH0216775A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001160425A (en) * | 1999-12-02 | 2001-06-12 | Japan Gore Tex Inc | Optical semiconductor electrode and its manufacturing method |
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