JPH02165073A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPH02165073A JPH02165073A JP63320999A JP32099988A JPH02165073A JP H02165073 A JPH02165073 A JP H02165073A JP 63320999 A JP63320999 A JP 63320999A JP 32099988 A JP32099988 A JP 32099988A JP H02165073 A JPH02165073 A JP H02165073A
- Authority
- JP
- Japan
- Prior art keywords
- film
- electrode
- connection
- metal
- semiconductor chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 47
- 229910052751 metal Inorganic materials 0.000 claims abstract description 49
- 239000002184 metal Substances 0.000 claims abstract description 49
- 230000001681 protective effect Effects 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 229920003002 synthetic resin Polymers 0.000 claims description 8
- 239000000057 synthetic resin Substances 0.000 claims description 8
- 238000005260 corrosion Methods 0.000 abstract description 10
- 230000007797 corrosion Effects 0.000 abstract description 10
- 238000000034 method Methods 0.000 abstract description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
- 239000004973 liquid crystal related substance Substances 0.000 description 29
- 238000007747 plating Methods 0.000 description 13
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 10
- 239000011521 glass Substances 0.000 description 10
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 8
- 229910052737 gold Inorganic materials 0.000 description 8
- 239000010931 gold Substances 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- 239000000853 adhesive Substances 0.000 description 6
- 230000001070 adhesive effect Effects 0.000 description 6
- 229910052759 nickel Inorganic materials 0.000 description 5
- 238000000576 coating method Methods 0.000 description 4
- 238000007772 electroless plating Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 239000000565 sealant Substances 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- 239000000428 dust Substances 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000155 melt Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 229920001568 phenolic resin Polymers 0.000 description 2
- 239000005011 phenolic resin Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- KCTAWXVAICEBSD-UHFFFAOYSA-N prop-2-enoyloxy prop-2-eneperoxoate Chemical compound C=CC(=O)OOOC(=O)C=C KCTAWXVAICEBSD-UHFFFAOYSA-N 0.000 description 1
- 239000005060 rubber Substances 0.000 description 1
- 210000003296 saliva Anatomy 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229920003048 styrene butadiene rubber Polymers 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 210000004243 sweat Anatomy 0.000 description 1
- 229920002725 thermoplastic elastomer Polymers 0.000 description 1
- 229920006230 thermoplastic polyester resin Polymers 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
Landscapes
- Liquid Crystal (AREA)
- Wire Bonding (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、透明導電膜から構成される液晶パネルに駆動
用の半導体チップを容易に、かつ信頼性良く直接実装し
た液晶表示装置などに適用される半導体装置に関するも
のである。[Detailed Description of the Invention] Industrial Application Field The present invention is applied to liquid crystal display devices, etc., in which a driving semiconductor chip is easily and reliably mounted directly on a liquid crystal panel made of a transparent conductive film. The present invention relates to semiconductor devices.
従来の技術
近年、透明導電膜が形成された２枚のガラス板の間隙中
に液晶物質を充填させた構成の液晶パネルに駆動用の半
導体チップを直接実装して薄形。Background of the Invention In recent years, thin liquid crystal panels have been developed in which driving semiconductor chips are directly mounted on liquid crystal panels, which have a structure in which liquid crystal material is filled in the gap between two glass plates with transparent conductive films formed thereon.
軽量の液晶表示装置にする試みが盛んに行われている。Many attempts are being made to create lightweight liquid crystal display devices.
この代表的な方法として、予め半導体チップの電極部分
に、金めつきなどで形成された突起形状の接続用金属電
極と、ガラス板上に透明導電膜が形成された接続用電極
とを互いに対向させた状態（半導体チップがフェースダ
ウン状態をなす）で、この間に、導電性接着剤を介在さ
せて電気的接続と接着・固定を行う方法がある。このと
き、導電性接着剤は、予め、半導体チップの突起形状の
接続用金属電極面に転写法やデイツプ法などにより形成
しておき、ガラス板上の透明導電膜パターンに位置整合
し、載置した後、熱硬化することにより電気的接続させ
るものである。A typical method for this is to place a metal connection electrode in the shape of a protrusion, which is formed by gold plating or the like on the electrode part of a semiconductor chip in advance, and a connection electrode, which has a transparent conductive film formed on a glass plate, facing each other. There is a method in which electrical connection, adhesion, and fixation are performed by interposing a conductive adhesive between the semiconductor chips and the semiconductor chip in a face-down state (the semiconductor chip is in a face-down state). At this time, the conductive adhesive is formed in advance on the protrusion-shaped connection metal electrode surface of the semiconductor chip by a transfer method or dip method, and is aligned with the transparent conductive film pattern on the glass plate and placed. After that, it is thermally cured to make an electrical connection.
この液晶表示装置における導電性接着剤を用いた場合の
接続構造を第４図に示す。１＆、１ｂは液晶パネルを構
成する２枚のガラス板でありそれぞれ透明導電膜４ Ｌ
、 ４ ｂが形成され、ガラス板１ａには前記透明導
電膜４ａが外部に延び接続用電極４２Ｌ’として図に示
すように庇状に形成され、導電性接着剤５を介して予め
、突起形状の接続用金属電極θが形成された半導体テッ
プ７がフェースダウンの状態で電気的に接続され、かつ
接着・固定されている。また、２は液晶、３はシール剤
である。FIG. 4 shows a connection structure using a conductive adhesive in this liquid crystal display device. 1&, 1b are two glass plates constituting the liquid crystal panel, each with a transparent conductive film 4L
. The semiconductor tip 7 on which the connecting metal electrode θ is formed is electrically connected in a face-down state and is bonded and fixed. Further, 2 is a liquid crystal, and 3 is a sealant.
発明が解決しようとする課題
前記の接続構造においては、第４図に示すように一般的
には庇状のガラス板１ａの表面に形成された透明導電膜
４１！Ｌからなる接続用電極４ａ’上に直接半導体チッ
プ了の突起形状の接続用金属電極６が７エースダウンの
状態で導電性接着剤５を介して電気的接続および接着・
固定を行うために、前記接続用電極４ａ’の大部分は露
出状態になっている（半導体チップ７が載置されない部
分も含むＬそして、透明電極に一般に使用される透明導
電膜は酸化物であるため乾燥大気中では安定であるが、
水分が存在すると分解し易く、さらに電圧を印加すると
電解腐食あるいは、隣接間ショートによる過大電流のた
めに透明導電膜の断線が生ずることや、金属クズなどの
導電性のゴミや汗、だ液などのイオン性汚物が付着し、
／ヨードや腐食の原因になるなど、液晶表示装置に適用
した場合に、品質、長期的接続信頼性に欠ける大きな問
題を有していた。この対策の一つとして、前記の接続用
電極４ａ′すなわち透明導電膜上に無電解めっき法など
によりニッケルめっき、あるいはニッケルめっきした上
に、さらに金めっきすることにより金属皮膜を施した構
造が見られる。この場合、透明導電膜表面の僅かな汚染
等があれば、透明導電膜表面はめっき皮膜が均一、かつ
完全に被覆されず、多数のピンホールが発生する問題が
ある。さらに透明導電膜の膜厚が通常３００八〜２００
０人であり極めて薄いために、厚み方向、すなわち、透
明導電膜の側面においては、めっき皮膜の密着が非常に
悪い状態で形成されるなどの問題があり、前記のように
水分の存在などによシめつき皮膜のピンホールや、透明
導電膜とめつき皮膜との界面から水分が浸入し、電圧を
印加することによって電解腐食を生ずるなど恒久的な対
策にはなっていない。Problems to be Solved by the Invention In the above connection structure, as shown in FIG. 4, a transparent conductive film 41 is generally formed on the surface of an eave-shaped glass plate 1a! A contact metal electrode 6 in the shape of a protrusion of the semiconductor chip is placed directly on the contact electrode 4a' consisting of a semiconductor chip in a state of 7 aces down, and is electrically connected and bonded via the conductive adhesive 5.
In order to fix it, most of the connection electrode 4a' is exposed (including the part where the semiconductor chip 7 is not mounted).The transparent conductive film generally used for the transparent electrode is made of oxide. Therefore, it is stable in dry atmosphere,
It easily decomposes in the presence of moisture, and if voltage is applied, it may cause electrolytic corrosion or breakage of the transparent conductive film due to excessive current due to short circuit between adjacent parts, and conductive dirt such as metal scraps, sweat, saliva, etc. ionic filth adheres to it,
When applied to liquid crystal display devices, there were major problems such as a lack of quality and long-term connection reliability, such as causing iodine and corrosion. As one of the countermeasures against this problem, there is a structure in which the connection electrode 4a', that is, the transparent conductive film, is plated with nickel by electroless plating, or a metal film is applied by further plating gold on top of nickel plating. It will be done. In this case, if there is slight contamination or the like on the surface of the transparent conductive film, there is a problem that the surface of the transparent conductive film is not uniformly and completely covered with a plating film, and many pinholes are generated. Furthermore, the thickness of the transparent conductive film is usually 300 to 200 mm.
0 and is extremely thin, there are problems such as the plating film being formed with very poor adhesion in the thickness direction, that is, on the side surfaces of the transparent conductive film, and as mentioned above, due to the presence of moisture etc. Moisture infiltrates through pinholes in the plating film and the interface between the transparent conductive film and the plating film, and electrolytic corrosion occurs when voltage is applied, so there is no permanent countermeasure.
本発明は、このような課題を解決するものであり、突起
形状の接続用金属電極を設けた半導体チップを液晶パネ
ルに直接実装した液晶表示装置などにおける透明導電膜
の保護を完全に達成し、高品質、高信頼性の液晶表示装
置に適用できる半導体装置を提供するものである。The present invention solves these problems and completely protects a transparent conductive film in a liquid crystal display device or the like in which a semiconductor chip provided with a protrusion-shaped connecting metal electrode is directly mounted on a liquid crystal panel. The present invention provides a semiconductor device that can be applied to a high quality, highly reliable liquid crystal display device.
課題を解決するだめの手段
前記の課題を解決するために、本発明の半導体装置は絶
縁性基板上に、表面に金属皮膜を形成した透明導電膜か
らなる接続用電極を設け、この接続用電極上に、合成樹
脂からなる保護膜を形成し、突起形状の接続用金属電極
を設けた半導体チップが、前記絶縁性基板上に形成した
接続用電極と互いに対向するように配設され、前記半導
体チックの接続用金属電極が熱圧着によシ、前記保護膜
を突き破り、前記接続用電極と電気的に導通するように
取付けた構成とするものである。Means for Solving the Problems In order to solve the above problems, the semiconductor device of the present invention provides a connection electrode made of a transparent conductive film with a metal film formed on the surface on an insulating substrate. A semiconductor chip having a protective film made of synthetic resin formed thereon and provided with protrusion-shaped connecting metal electrodes is disposed so as to face the connecting electrodes formed on the insulating substrate, and The connecting metal electrode of the tick is attached by thermocompression bonding so as to break through the protective film and be electrically connected to the connecting electrode.
作用
この構成によれば、絶縁性基板上の表面に金属皮膜を形
成した透明導電膜からなる接続用電極上に、さらに合成
樹脂からなる保護膜が形成されたものであシ、突起形状
の接続用金属電極を設けた半導体チップと６ｉＪ記絶縁
性基板上に形成した接続用電極との電気的接続において
、前記保護膜は、半導体チップの熱圧着時に溶融し加圧
力により、半導体チップに設けた突起形状の接続用金属
電極で突き破られるとともに接続用金属電極以外の周縁
部に排除されることによシミ気的接続が得られるもので
ある。しかも、前記の如く絶縁性基板上の表面に金属皮
膜を形成することにより、透明導電膜からなる接続用電
極を予め、大まかに保護したうえに、半導体チップの接
続用金属電極の接続されない部分の接続用電極や、半導
体チップ以外の部分に保護膜が残存しているために、２
重に保護されていることになり、湿気、ゴミなどをしゃ
断でき、結果的に接続用電極が完全に外気から保護され
た状態を保持し、高品質、高信頼性の半導体装置を得る
ことができる。Function: According to this configuration, a protective film made of synthetic resin is further formed on a connection electrode made of a transparent conductive film with a metal film formed on the surface of an insulating substrate. In the electrical connection between the semiconductor chip provided with the metal electrode for use and the connection electrode formed on the insulating substrate described in 6iJ, the protective film melts during thermocompression bonding of the semiconductor chip and is applied to the semiconductor chip by pressure. It is pierced by the protrusion-shaped connecting metal electrode and is removed to the periphery other than the connecting metal electrode, thereby providing an air-tight connection. Moreover, by forming a metal film on the surface of the insulating substrate as described above, the connecting electrodes made of transparent conductive films are roughly protected in advance, and the unconnected parts of the connecting metal electrodes of the semiconductor chip are protected. Because the protective film remains on the connection electrodes and parts other than the semiconductor chip,
This means that it is heavily protected and can block moisture, dust, etc., and as a result, the connecting electrodes remain completely protected from the outside air, making it possible to obtain high quality and highly reliable semiconductor devices. can.
実施例
以下、本発明の一実施例を図面を用いて説明する。第２
図已において、１１Ｌ、１１ｂは液晶パネルを構成する
２枚の絶縁性基板としてのガラス板であり、それぞれ透
明導電膜１４２Ｌ、１４ｂが形成されガラス板１１１Ｌ
には、前記透明導電膜１４２Ｌが外部に延び庇状に露出
している。なお、１２は液晶、１３はシール剤である。EXAMPLE Hereinafter, an example of the present invention will be described with reference to the drawings. Second
In the figure, 11L and 11b are glass plates as two insulating substrates constituting the liquid crystal panel, and transparent conductive films 142L and 14b are formed on the glass plate 111L, respectively.
In the figure, the transparent conductive film 142L extends to the outside and is exposed in the shape of an eave. Note that 12 is a liquid crystal, and 13 is a sealant.
１５は前記透明導電膜１４＆上に形成された金属皮膜で
あり、前記透明導電膜１４４と金属皮膜１５とにより接
続用電極として構成されている。１６は前記金属皮膜１
６上に形成された合成樹脂からなる保護膜であり、前記
接続用電極１４ａ上には、金属皮膜１５と、合成樹脂１
６の２重の保護膜が形成されている。なお金属皮膜１５
として、本実施例では無電解めっき法により膜厚Ｏ，Ｓ
μｍのニッケルめっき皮膜を形成した後、さらに無電解
めっき法によりＯ，ＯＳμｍの金めつき皮膜を形成した
ものを用いたが、その他として、金、銀、銅、クロム白
金、パラジウム、アルミニウム、半田等の単層皮膜、さ
らには、これらの多層皮膜１合金皮膜などを無電解めっ
き法、電解めっき法、スパッタリング法、蒸着法等を用
いて形成した金属皮膜なども有効である。また、合成樹
脂からなる保護膜１６として、本実施例では、半導体チ
ップの熱圧着による接続において、容易に溶融し、かつ
接着強度の高い熱可塑性ポリエステル樹脂を用い、前記
接続用電極上に形成された金属皮膜１５とを完全に覆う
ために、全面にコーティングを行い保護膜とした。その
他、前記保護膜として、アクリル。Reference numeral 15 denotes a metal film formed on the transparent conductive film 14&, and the transparent conductive film 144 and the metal film 15 constitute a connection electrode. 16 is the metal film 1
A protective film made of synthetic resin is formed on the connecting electrode 14a, and a metal film 15 and a synthetic resin 1 are formed on the connecting electrode 14a.
6 double protective films are formed. Note that the metal film 15
In this example, the film thicknesses O and S were reduced by electroless plating.
After forming a nickel plating film of μm, a gold plating film of O, OS μm was formed by electroless plating. Also effective are single-layer coatings such as these, and metal coatings formed by using electroless plating, electrolytic plating, sputtering, vapor deposition, etc., such as multilayer coatings such as 1-alloy coatings. In addition, in this embodiment, as the protective film 16 made of synthetic resin, a thermoplastic polyester resin that is easily melted and has high adhesive strength is used when connecting semiconductor chips by thermocompression bonding, and is formed on the connection electrode. In order to completely cover the metal film 15, the entire surface was coated to form a protective film. In addition, acrylic may be used as the protective film.
ポリビニールブチラール、ポリスチレン等の熱可塑性樹
脂、スチレン−ブタジェン共重合体ゴム等の熱可塑性ゴ
ム、未硬化液状のフェノール樹脂、エポキシ樹脂、エポ
キシ変性フェノール樹脂、シリコン樹脂等の硬化性樹脂
、未硬化液状のエポキシアクリレートオリゴマー、アク
リレートモノマー等の光硬化性樹脂等の単体もしくは、
混合物なども有効である。なお第２図すは、前記第２図
ａにおけるＡ−人′部分の断面図であり、ガラス板１１
ａ上に形成した透明導電膜１４１と、さらには、その上
に形成した金属皮膜１６とからなる接続用電極、および
、接続用電極以外の余白部分を含む全面に保護膜１６を
形成した状態を示すものである。Thermoplastic resins such as polyvinyl butyral and polystyrene, thermoplastic rubbers such as styrene-butadiene copolymer rubber, uncured liquid phenolic resins, epoxy resins, epoxy-modified phenolic resins, curable resins such as silicone resins, uncured liquid Epoxy acrylate oligomers, acrylate monomers, and other photocurable resins alone or
Mixtures are also effective. Note that FIG. 2 is a sectional view of the A-person' portion in FIG. 2a, and the glass plate 11
A state in which a connection electrode consisting of a transparent conductive film 141 formed on a and a metal film 16 formed thereon, and a protective film 16 formed on the entire surface including a blank area other than the connection electrode. It shows.
次いで第１図に示すように予め半導体チップ１８の電極
部分に、金めつきにより突起形状の接続用金属電極１７
と前記ガラス板１１ａ上に形成した接続用電極とを互い
に対向させた状態（半導体チップがフユースダウン状態
をなす）で位置整合し、半導体チップ１８の裏面から１
４０’Ｃ加熱ツールと３Ｋｑ／ｃｔＡの圧力で３０秒間
押え電気的に接続５．固定し液晶表示装置とした。この
ような接続構造によれば、前記第２図に示すように保護
膜１６は半導体チップ１８の熱圧着時に溶融し加圧力に
より、半導体チップ１８に形成された突起形状の接続用
金属′直棒１７で突き破られるとともに、流動し接続用
金属電極１７以外の周縁部に排除されることにより、電
気的接続が得られるものである。また半導体チップ１８
のうち、接続用金属電極１了以外の部分も保護膜１６に
より全面接着されるために接着強度が著しく向上できる
。さらには、接続用電極１４において半導体チップ１８
が載置されない部分には保護膜１６が残存し外気と遮断
し防湿効果を得ることができる。なお、前記半導体チッ
プ１８における突起形状の接続用金属電極１７として、
本実施例では金を用いたが、その他として、半田、銀、
銅、白金、パラジウム。Next, as shown in FIG. 1, a protrusion-shaped connection metal electrode 17 is formed by gold plating on the electrode portion of the semiconductor chip 18 in advance.
and the connection electrode formed on the glass plate 11a are aligned in a state where they are facing each other (the semiconductor chip is in a fuse-down state), and one
Connect electrically with a 40'C heating tool for 30 seconds at a pressure of 3Kq/ctA5. It was fixed and used as a liquid crystal display device. According to such a connection structure, as shown in FIG. 2, the protective film 16 melts during thermocompression bonding of the semiconductor chip 18, and due to the pressure, the protrusion-shaped connection metal straight rod formed on the semiconductor chip 18 is removed. Electrical connection is obtained by being pierced by the metal electrode 17, flowing and being removed to the peripheral portion other than the connection metal electrode 17. Also, the semiconductor chip 18
Among them, the parts other than the connecting metal electrode 1 are also entirely bonded by the protective film 16, so that the bonding strength can be significantly improved. Furthermore, in the connection electrode 14, the semiconductor chip 18
The protective film 16 remains on the portions where it is not placed, and is shielded from the outside air to provide a moisture-proofing effect. Note that as the protrusion-shaped connection metal electrode 17 in the semiconductor chip 18,
Although gold was used in this example, solder, silver,
Copper, platinum, palladium.
ニッケル等の単体、もしくは複合したものを用いても良
い。また接続用金属電極１７の断面形状としては、平形
、おわん形でも良いが、本実施例では、第３図に示すよ
うに両端部（上面から見た場合、実際には、接続用金属
電極の周縁部分に相当）が、つの形状のものが、保護膜
１６を突き破るうえで特に有効である。具体的には本実
施例においては、つの部分を含めた接続用金属電極１７
の総厚が約２０／１ｍ、つの以外の部分の総厚が約１７
μｍに形成した金を用いた。A single substance such as nickel or a combination thereof may be used. The cross-sectional shape of the connecting metal electrode 17 may be flat or bowl-shaped, but in this embodiment, as shown in FIG. It is particularly effective to break through the protective film 16 if it has a shape of two (corresponding to the peripheral edge portion). Specifically, in this embodiment, the connecting metal electrode 17 including the
The total thickness of the part is about 20/1m, and the total thickness of the part other than the part is about 17m.
Gold formed to a μm size was used.
次いで、本実施例により得た液晶表示装置の防湿効果を
確認するために、前記液晶表示装置１０個について、そ
れぞれ印加電圧ＤＣ１６Ｖを印加しながら、６０’Ｃで
９０〜９５％ＲＨの恒温恒湿雰囲気中に投入し、耐電食
性試験を行った。これにより得た結果を次の表に示した
。Next, in order to confirm the moisture-proofing effect of the liquid crystal display device obtained in this example, each of the 10 liquid crystal display devices was subjected to constant temperature and humidity at 60'C and 90 to 95% RH while applying an applied voltage of 16 V DC. An electrolytic corrosion resistance test was conducted by putting it in an atmosphere. The results obtained are shown in the following table.
さらに比較例１，２として従来技術により液晶表示装置
を作製した。Further, as Comparative Examples 1 and 2, liquid crystal display devices were manufactured using conventional techniques.
比較例１
第４図に示すように２枚のガラス板１３，１ｂには、そ
れぞれ透明導電膜４２Ｌ 、４ｂを形成し、ガラス板１
２Ｌには、前記透明導電膜４ａが外部に延び接続用電極
４ａとして庇状に露出させた液晶パネルを作製した。そ
してこの液晶パネルの庇状部分に形成した前記透明導電
膜４２Ｌと、予め半導体チップ７の電極部分に、金めつ
きで形成した突起形状の接続用金属電極６に、銀粉末を
エポキシ樹脂中に分散させて得だ導電性接着剤をデイツ
プ法により形成したものとを互いに対向させ、位置整合
し、載置した後、１５０’Ｃで熱硬化し電気的に接続・
固定し液晶表示装置を得た。Comparative Example 1 As shown in FIG. 4, transparent conductive films 42L and 4b were formed on two glass plates 13 and 1b, respectively.
In 2L, a liquid crystal panel was fabricated in which the transparent conductive film 4a was extended to the outside and exposed in the form of an eave as a connection electrode 4a. Then, silver powder is applied to the transparent conductive film 42L formed on the eaves-like part of the liquid crystal panel and the protrusion-shaped connecting metal electrode 6 formed in advance by gold plating on the electrode part of the semiconductor chip 7, in an epoxy resin. After dispersing and forming conductive adhesive using the dip method, they are placed facing each other, aligned, and placed, and then thermally cured at 150'C to electrically connect and connect them.
It was fixed to obtain a liquid crystal display device.
比較例２
比較例２として、比較例１における液晶パネルの庇状に
露出させた透明導電膜４ａからなる接続用電極４ａ上に
、本実施例と同様に、０．８μｍ厚のニッケルめっき皮
膜を形成した後、さらに０．０５μｍ厚の金めつき皮膜
を形成し、前記比較例１と同様の方法で、半導体チップ
７を電気的に接続・固定し液晶表示装置を得た。Comparative Example 2 As Comparative Example 2, a nickel plating film with a thickness of 0.8 μm was applied on the connection electrode 4a made of the transparent conductive film 4a exposed like the eaves of the liquid crystal panel in Comparative Example 1, in the same manner as in this example. After the formation, a gold plating film with a thickness of 0.05 μm was further formed, and the semiconductor chip 7 was electrically connected and fixed in the same manner as in Comparative Example 1 to obtain a liquid crystal display device.
これら比較例１．２において本実施例と同様に、それぞ
れ液晶表示装置１０個ずつについて、耐電食性試験を行
った。これにより得た結果を次の表１に示した。In Comparative Examples 1 and 2, electrolytic corrosion resistance tests were conducted on 10 liquid crystal display devices in each case in the same manner as in the present example. The results obtained are shown in Table 1 below.
表１
前記衣に示すとおり、本実施例における液晶表示装置は
、耐電食性試験において、電食断線不良は全く発生しな
かった。Table 1 As shown in the above table, the liquid crystal display device of this example did not have any electrical corrosion disconnection defects in the electrical corrosion resistance test.
発明の効果
本発明のように構成した半導体装置は、絶縁性基板上に
形成した透明導電膜上に金属皮膜と合成樹脂からなる保
護膜を形成した２重の保護膜構成により、半導体チップ
が載置されない部分の透明導電膜の耐湿性、防塵性を著
しく向上できるとともに、半導体チップをフェースダウ
ン状で電気的に接続・固定において、その電気的接続は
、突起形状の接続用金属電極が、合成樹脂からなる保護
膜を突き破り、透明導電膜上に形成した金属皮膜に食い
込むように接続されるためオーミックな接続が得られ（
通常、金属皮膜表面は、透明導電膜表面より、表面粗さ
が大きいため食い込み易い）、かつ、この状態で、合成
樹脂からなる保護膜で半導体チップの接続用金属電極以
外の部分が全面接着・固定されるため接続信頼性を著し
く向上できる。また液晶表示装置におけるクロストーク
防止のために、抵抗値を低減する目的で、透明導電膜上
に金属皮膜を形成する試みも、従来は、電食断線が完全
に防止できなかったが、本発明の構成により、達成でき
るなど、半導体チップ実装タイプの液晶表示装置として
、高信頼性、高品位のものが得られるなど甑めて工業的
価値の犬なるものである。Effects of the Invention A semiconductor device configured as in the present invention has a double protective film structure in which a protective film made of a metal film and a synthetic resin is formed on a transparent conductive film formed on an insulating substrate, so that a semiconductor chip can be mounted. In addition to significantly improving the moisture resistance and dust resistance of the transparent conductive film in the areas that are not placed, the electrical connection is achieved by connecting and fixing semiconductor chips face-down, using protrusion-shaped connecting metal electrodes. It breaks through the protective film made of resin and connects by biting into the metal film formed on the transparent conductive film, resulting in an ohmic connection (
(Normally, the surface of a metal film has a larger surface roughness than the surface of a transparent conductive film, so it is more likely to dig into the surface.) In this state, the protective film made of synthetic resin is used to completely adhere the parts of the semiconductor chip other than the metal electrodes for connection. Since it is fixed, connection reliability can be significantly improved. Furthermore, attempts to form a metal film on a transparent conductive film for the purpose of reducing resistance in order to prevent crosstalk in liquid crystal display devices have not been able to completely prevent electrical corrosion, but the present invention This structure makes it possible to achieve high reliability and high quality as a semiconductor chip mounting type liquid crystal display device, which is of great industrial value.
第１図は本発明の一実施例の半導体装置の部分断面図、
第２図ａ、ｂは本発明の一実施例の構成を説明するだめ
の部分断面図、第３図は本発明の一実施例に用いた突起
形状の接続用金属電極を設けた半導体チップを示す部分
断面図、第４図は従来の半導体装置の接続状態を示す部
分断面図である。
１１ａ １１ｂ・・・・・・絶縁性基板、１２・・・
・・・液晶、１３・・・・・・シール剤、１４ａ、１４
ｂ・・・・・・透明導電膜、１５・・・・・・金属皮膜
、１６・・・・・・保護膜、１７・・・・・接続用金属
電極、１８・・・・・半導体チップ。
代理人の氏名 弁理士 粟 野 重 孝 ほか１名ど４
）
／／ｃ、 ／／ｂ−・Ｐ！、陽性基板
ｔ２−虫品
１３− シールを■
１４久、 １４ｂ・−・適朗埠￥喚
ｔ５−−−圭Ｘ皮膜
１６− 殊須禮
ｔ’ｙ−一按蝿用危属電槓
１Ｂ−−−′＋埠体テソフ。FIG. 1 is a partial cross-sectional view of a semiconductor device according to an embodiment of the present invention;
Figures 2a and b are partial cross-sectional views for explaining the configuration of an embodiment of the present invention, and Figure 3 shows a semiconductor chip provided with protrusion-shaped connecting metal electrodes used in an embodiment of the present invention. FIG. 4 is a partial sectional view showing a connection state of a conventional semiconductor device. 11a 11b...Insulating substrate, 12...
...Liquid crystal, 13...Sealant, 14a, 14
b...Transparent conductive film, 15...Metal film, 16...Protective film, 17...Metal electrode for connection, 18...Semiconductor chip . Name of agent: Patent attorney Shigetaka Awano and 1 other person
) //c, //b-・P! , Positive board t2-Insect product 13- Seal ■ 14ku, 14b--Tekurobu ¥ call t5--Kei −−′+Tesofu Buitai.
Claims (1)
からなる接続用電極を設け、この接続用電極上に、合成
樹脂からなる保護膜を形成し、突起形状の接続用金属電
極を設けた半導体チップが、前記絶縁性基板上に形成し
た前記接続用電極と互いに対向するように配設され、前
記半導体チップの接続用金属電極が熱圧着により、前記
保護膜を突き破り、前記接続用電極と電気的に導通する
ように取付けた半導体装置。A connection electrode made of a transparent conductive film with a metal film formed on the surface is provided on an insulating substrate, a protective film made of synthetic resin is formed on this connection electrode, and a protrusion-shaped connection metal electrode is provided. A semiconductor chip is disposed to face the connection electrode formed on the insulating substrate, and the connection metal electrode of the semiconductor chip breaks through the protective film by thermocompression bonding, and the connection electrode A semiconductor device installed in such a way that it is electrically connected to a semiconductor device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32099988A JP2780293B2 (en) | 1988-12-19 | 1988-12-19 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32099988A JP2780293B2 (en) | 1988-12-19 | 1988-12-19 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02165073A true JPH02165073A (en) | 1990-06-26 |
| JP2780293B2 JP2780293B2 (en) | 1998-07-30 |
Family
ID=18127657
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP32099988A Expired - Fee Related JP2780293B2 (en) | 1988-12-19 | 1988-12-19 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2780293B2 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002006330A (en) * | 2000-06-19 | 2002-01-09 | Micro Gijutsu Kenkyusho:Kk | Substrate for liquid crystal display device and method for mounting circuit on the same |
| WO2005034231A1 (en) * | 2003-10-06 | 2005-04-14 | Nec Corporation | Electronic device and its manufacturing method |
| KR100543039B1 (en) * | 1998-07-31 | 2006-04-06 | 삼성전자주식회사 | Liquid crystal display |
| JP2006310880A (en) * | 1998-07-01 | 2006-11-09 | Seiko Epson Corp | Semiconductor apparatus and its manufacturing method, circuit substrate as well as electronic apparatus |
| US7560819B2 (en) | 1998-07-01 | 2009-07-14 | Seiko Epson Corporation | Semiconductor device and method of manufacture thereof, circuit board and electronic instrument |
-
1988
- 1988-12-19 JP JP32099988A patent/JP2780293B2/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006310880A (en) * | 1998-07-01 | 2006-11-09 | Seiko Epson Corp | Semiconductor apparatus and its manufacturing method, circuit substrate as well as electronic apparatus |
| US7560819B2 (en) | 1998-07-01 | 2009-07-14 | Seiko Epson Corporation | Semiconductor device and method of manufacture thereof, circuit board and electronic instrument |
| US7868466B2 (en) | 1998-07-01 | 2011-01-11 | Seiko Epson Corporation | Semiconductor device and method of manufacture thereof, circuit board and electronic instrument |
| KR100543039B1 (en) * | 1998-07-31 | 2006-04-06 | 삼성전자주식회사 | Liquid crystal display |
| JP2002006330A (en) * | 2000-06-19 | 2002-01-09 | Micro Gijutsu Kenkyusho:Kk | Substrate for liquid crystal display device and method for mounting circuit on the same |
| WO2005034231A1 (en) * | 2003-10-06 | 2005-04-14 | Nec Corporation | Electronic device and its manufacturing method |
| JP2009218613A (en) * | 2003-10-06 | 2009-09-24 | Nec Corp | Electronic device and method for manufacturing the same |
| US8035202B2 (en) | 2003-10-06 | 2011-10-11 | Nec Corporation | Electronic device having a wiring substrate |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2780293B2 (en) | 1998-07-30 |
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