JPH0215647A - Semiconductor manufacturing apparatus - Google Patents
Semiconductor manufacturing apparatusInfo
- Publication number
- JPH0215647A JPH0215647A JP16533388A JP16533388A JPH0215647A JP H0215647 A JPH0215647 A JP H0215647A JP 16533388 A JP16533388 A JP 16533388A JP 16533388 A JP16533388 A JP 16533388A JP H0215647 A JPH0215647 A JP H0215647A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- signals
- processing
- judgment
- monitor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 19
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 238000012545 processing Methods 0.000 claims abstract description 35
- 235000012431 wafers Nutrition 0.000 abstract description 41
- 238000000034 method Methods 0.000 abstract description 17
- 238000005259 measurement Methods 0.000 abstract description 12
- 238000012544 monitoring process Methods 0.000 abstract description 7
- 230000005856 abnormality Effects 0.000 abstract description 4
- 238000012360 testing method Methods 0.000 abstract description 2
- 238000007689 inspection Methods 0.000 description 7
- 239000002245 particle Substances 0.000 description 5
- 239000000126 substance Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
Landscapes
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、ウェーハの処理を行いつつ、ウェーハの表
面近傍に発生づる異物を測定できる半導体製造装置に関
する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor manufacturing apparatus capable of measuring foreign matter generated near the surface of a wafer while processing the wafer.
第３図はこの種の従来の半導体製造装置を用い半導体装
置を製造する場合のフローチャートである。まず拡散処
理等されるべき一組の実ウェーハを搬送系により反応室
内に搬送する（ＩＩＩ送工程）。FIG. 3 is a flowchart for manufacturing a semiconductor device using this type of conventional semiconductor manufacturing equipment. First, a set of actual wafers to be subjected to a diffusion process, etc. is transported into a reaction chamber by a transport system (III transport process).
この場合、実ウェーハの一部をモニターウェーハとする
。その後排気系により反応室より空気を排気しく排気工
程）、ぞの後反応室を加熱しつつ、反応室内に所定ガス
を導入し拡散等を行う（実処理コニ程）。この明細書に
おいては、これら搬送工程、排気工程、実処理工程を含
めてモニター処理Ｓ１あるいは単に処理という。In this case, a part of the actual wafer is used as a monitor wafer. Thereafter, the air is exhausted from the reaction chamber by an exhaust system (exhaust step), and after that, while heating the reaction chamber, a predetermined gas is introduced into the reaction chamber and diffused, etc. (actual processing step). In this specification, these transport steps, exhaust steps, and actual processing steps are collectively referred to as monitor processing S1 or simply processing.
前記モニター処理Ｓ１中に、モニター処］！［！８１を
行う装置の部品の劣化等により生じた異物がモニターウ
ェーハ表面に付着する場合がある。この異物数を測定す
るため、以下のようにモニター処ｙｆ！８２．判定Ｓ３
を行う。モニター処理Ｓ１終了後反応室からモニターウ
ェーハを取り出し、安物検査装置を用い、例えばモニタ
ーウェーハ表面にシー１Ｆ−光を照射し、その散乱光に
基づきウェーハ表面に付着した異物数を測定し、（モニ
ター測定３２）その後、測定された異物数が許容範囲（
半導体装置の特性が劣化しない範囲）か否かを判定覆る
（判定８３）。During the monitor process S1, the monitor process]! [! Foreign matter caused by deterioration of parts of the equipment that performs 81 may adhere to the surface of the monitor wafer. In order to measure the number of foreign substances, monitor processing yf! 82. Judgment S3
I do. After the monitoring process S1 is completed, the monitor wafer is taken out from the reaction chamber, and using a cheap inspection device, for example, the surface of the monitor wafer is irradiated with Sea 1F-light, and the number of foreign substances attached to the wafer surface is measured based on the scattered light. Measurement 32) After that, the number of foreign particles measured falls within the allowable range (
It is determined whether the semiconductor device is in a range in which the characteristics of the semiconductor device do not deteriorate (determination 83).
なお、モニター測定Ｓ２で測定されるｔウェーハは実ウ
ェーハでもよい。Note that the t-wafer measured in the monitor measurement S2 may be an actual wafer.
従来の半導体製造装置を用いての半導体装置の製造は以
上のにうな工程で行われ、モニター測定Ｓ２はモニター
処理Ｓ１後、つまり実処理工程後に行われるので、異物
が発生していてもその異物はつ１−ハに付着している。Manufacturing of semiconductor devices using conventional semiconductor manufacturing equipment is performed through the above-mentioned steps, and the monitor measurement S2 is performed after the monitor processing S1, that is, after the actual processing step. It is attached to the flower 1-ha.
そのため、例えばモニター測定Ｓ２においてレーザー光
の散乱光に基づき異物数を測定した場合、ウェーハ上に
形成されている膜の厚さによってｂｒｌｌ乱光が変化す
るため異物数の測定感度が悪くなり、判定Ｓ３が甘くな
る場合があるという問題点があった。また、モニター処
理Ｓ１終了後、モニター測定Ｓ２及び判定Ｓ３を行うの
はスループツ１−が悪いという問題点があった。例えば
搬送工程で許容範囲以上の異物がウェー八表面に付着し
ても、その判定は七二ター処理終了後に行われるモニタ
ー測定Ｓ２及び判定Ｓ３により行われるのでスループツ
］・が悪い。Therefore, for example, when measuring the number of foreign objects based on the scattered light of the laser beam in monitor measurement S2, the brll scattered light changes depending on the thickness of the film formed on the wafer, so the measurement sensitivity of the number of foreign objects deteriorates, and the judgment There is a problem that S3 may become weak. Further, there is a problem in that it is a problem that the throughput 1- performs the monitor measurement S2 and the judgment S3 after the monitor processing S1 is completed. For example, even if foreign matter exceeding the allowable range adheres to the surface of the wafer during the conveyance process, the throughput is poor because the determination is made by monitor measurement S2 and determination S3 performed after the completion of the 72-meter process.
さらに、実処理工程終了侵、実ウェーハに許容範囲以Ｆ
の５゛シ物がｉ−Ｊ ？’＋ Ｌ、ていることがわかっ
てもこれらの実つｒ−八は１鰻品化できないので手遅れ
であるという問題点があった。In addition, if the actual processing process is finished, the actual wafer may be damaged beyond the allowable range.
The 5゛shi thing is i-J? The problem was that even if it was found that ``+L'' was present, it would be too late since these fruits could not be converted into one eel product.
一方、前記問題点を解決するためモニター測定Ｓ２を実
処理工程後に行うこと、つまり搬送工程及び排気ＩＰ？
柊了復に行うことも考えられるが、こうすると実処理工
程で発生づる異物数の測定ができず、実処理工程で発生
した異物数が判定Ｓ３に反映されないという問題点があ
った。On the other hand, in order to solve the above-mentioned problem, the monitor measurement S2 should be performed after the actual processing process, that is, the transport process and the exhaust IP?
Although it is conceivable to carry out this method in a similar manner, there is a problem in that the number of foreign particles generated in the actual treatment process cannot be measured and the number of foreign particles generated in the actual treatment process is not reflected in the determination S3.
この発明はＬ記のような問題点を解消リ−るためになさ
れたしのぐ、ウェーハの処理を行いながら、前記ウェ一
ハの表面近傍に発生する異物を測定することがて゛きる
半導体製造装置を１！７にとを目的とする。This invention has been made in order to overcome the problems described in item L and to provide a semiconductor manufacturing apparatus that can measure foreign matter generated near the surface of a wafer while processing the wafer. The purpose is to !7.
この発明に係る半導体製造装置は、ウェーハを処理する
ことにより半導体装置を製造する半導体製造装置て・あ
って、前記ウェーハの処゛埋中に前記ウェーハの表面近
傍の雰囲気中に信号を通過させ、通過後の前記信号の変
化を感知することにより前記ウェーハの表面近傍に発生
ずる異物を測定することができる構成としている。A semiconductor manufacturing apparatus according to the present invention is a semiconductor manufacturing apparatus that manufactures semiconductor devices by processing a wafer, and includes the steps of: passing a signal into an atmosphere near the surface of the wafer during processing of the wafer; The structure is such that foreign matter generated near the surface of the wafer can be measured by sensing changes in the signal after passing through the wafer.
（作用〕
この発明は、−ウェーハの処理中に１クエーハの表面近
傍の雰囲気中に信号を通過させ、通過後の信号の変化を
感知することによりウェーハの処理と同時にウェーハの
表面近傍に発生１Ｊる異物を測定する。(Function) The present invention is capable of - passing a signal into the atmosphere near the surface of the 1 quafer during wafer processing, and detecting the change in the signal after passing, thereby generating 1 J near the wafer surface at the same time as the wafer processing; Measure foreign matter.
第１図はこの発明の一実施例を示すフローチャートであ
る。従来との相）ｎ点は、モニター処理とモニター測定
と判定を同時に行い（ステップＡＩ）ステップ△１中の
判定の結果が異常だとモニター処理の途中で６、その処
理を中断するようにしたことである。FIG. 1 is a flowchart showing one embodiment of the present invention. Phase with conventional method) At point n, monitor processing, monitor measurement, and judgment are performed at the same time (step AI).If the judgment result in step △1 is abnormal, the process is interrupted in the middle of the monitor processing. That's true.
第２図は第１図に示したステップＡ１の一実施例を承り
図である。図において、１はモニターウェーハ、２はモ
ニターウェーハ１の表面近傍の処理雰囲気、３は処理雰
囲気２中に存在する異物である。４はモニターウェーハ
１の表面近傍の処理雰囲気２中に発せられる検査信号、
４ａは検査信号４が処し！１！雰囲気２中を通過するこ
とにより変化した信号、５は検査信号４が異物３に干渉
することにより変化した信号である。FIG. 2 is a diagram illustrating an embodiment of step A1 shown in FIG. 1. In the figure, 1 is a monitor wafer, 2 is a processing atmosphere near the surface of the monitor wafer 1, and 3 is a foreign substance existing in the processing atmosphere 2. 4 is an inspection signal emitted into the processing atmosphere 2 near the surface of the monitor wafer 1;
4a is handled by inspection signal 4! 1! A signal 5 is a signal changed by passing through the atmosphere 2, and a signal 5 is a signal changed by the inspection signal 4 interfering with a foreign object 3.
次に、第２図を用いながら動作について説明する。まず
、従来と同様モニターウェーハ１が含まれた一組の実ウ
ェーハを同時に処理する。この処理と同時にモニターウ
ェーハ１の表面付近の処理雰囲気２中を検査信号４を通
過させる。すると、検査信号４は信ｊ３４ａあるいは信
号５に変化する。Next, the operation will be explained using FIG. 2. First, a set of real wafers including the monitor wafer 1 are processed simultaneously as in the conventional case. At the same time as this processing, an inspection signal 4 is passed through the processing atmosphere 2 near the surface of the monitor wafer 1. Then, the test signal 4 changes to signal j34a or signal 5.
信号／Ｉａ、信弓５を図示していない検査機能で検査し
、異物の発生状況を監視する。そして、信号５の発生が
許容範囲以上だと異常であると判定されアラームが発け
られ、モニター処理の途中（例えば搬送工程）でもモニ
ター処理は中断される（ステップ°Ａ２）。その後、例
えば劣化した部Ｒの交換でりを行ない、再びモニター処
理、モニター測定９刊定からなるステップＡ１を開始す
る。The signal /Ia and the bow 5 are inspected by an inspection function (not shown) to monitor the occurrence of foreign matter. If the generation of signal 5 exceeds the allowable range, it is determined that there is an abnormality and an alarm is issued, and the monitoring process is interrupted even during the middle of the monitoring process (for example, during the conveyance process) (step °A2). Thereafter, for example, the deteriorated part R is replaced, and step A1 consisting of monitoring processing and monitoring measurement 9 is started again.
信号５の発生が許容範囲以内だと異常なしと判定され、
モニター処理は終了する。If the occurrence of signal 5 is within the allowable range, it is determined that there is no abnormality.
Monitor processing ends.
以上のように、この発明によれば、ウェーハ処理中につ
Ｌ−ハの表面近傍の雰囲気中に信号を通過させ、通過後
の信号の変化を感知することによりウェーハの処理と同
時にウェーハの表面近傍に発生する異物を測定するよう
にしたので、ウェーハの処理中に異物が許容範囲以上発
生するとその時点でウェーハ処理を中断−４にとができ
スルーブツトが良くなるとともに、実処理工程を行ない
ながら同時に異物の測定がでさ゛るという効果がある。As described above, according to the present invention, a signal is passed through the atmosphere near the surface of the L-fer during wafer processing, and the change in the signal after passing is sensed. Since foreign particles generated in the vicinity are measured, wafer processing can be interrupted at that point if foreign particles occur in the vicinity during wafer processing, which improves throughput and allows the processing to be carried out while the actual processing process is being carried out. At the same time, this has the effect of making it impossible to measure foreign substances.
また、発生する異物をウェーハ付着前に測定できるので
異物測定感度が良くなるという効果もある。Further, since the generated foreign matter can be measured before it is attached to the wafer, there is an effect that the foreign matter measurement sensitivity is improved.
第１図はこの発明に係る半導体製造装置を用いて半導体
装置を製造する場合のフローヂＶ−ト、第２図はこの発
明の一実施例を示す図、第３図は従来の半導体製造装置
を用いて半導体装置を製造する場合のフローチャーｉ〜
である。
図において、１はモニターウェーハ、２は処理雰囲気、
３ ｆ、Ｌ ７Ｉ：物、４（よ検査信号、４ａ及び５は
信号である。
なお、各図中同一符号は同−Ｊ：たは相当部分を小ず。
代理人 人 岩 増 雄
第１図
第３図
第２図Fig. 1 shows a flow diagram when manufacturing a semiconductor device using the semiconductor manufacturing equipment according to the present invention, Fig. 2 shows an embodiment of the invention, and Fig. 3 shows a diagram of a conventional semiconductor manufacturing equipment. Flowchart i when manufacturing a semiconductor device using
It is. In the figure, 1 is a monitor wafer, 2 is a processing atmosphere,
3 f, L 7I: Object, 4 (inspection signal, 4a and 5 are signals. In each figure, the same reference numerals are the same - J: or the corresponding parts are small. Agent: Iwa Masuo No. 1 Figure 3Figure 2
Claims (1)
する半導体製造装置であって、 前記ウェーハの処理中に前記ウェーハの表面近傍の雰囲
気中に信号を通過させ、通過後の前記信号の変化を感知
することにより前記ウェーハの表面近傍に発生する異物
を測定することを特徴とする半導体製造装置。(1) A semiconductor manufacturing apparatus that manufactures semiconductor devices by processing a wafer, in which a signal is passed through an atmosphere near the surface of the wafer during processing of the wafer, and a change in the signal after passing is sensed. A semiconductor manufacturing apparatus characterized in that foreign matter generated near the surface of the wafer is measured by measuring the foreign matter generated near the surface of the wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16533388A JPH0215647A (en) | 1988-07-01 | 1988-07-01 | Semiconductor manufacturing apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16533388A JPH0215647A (en) | 1988-07-01 | 1988-07-01 | Semiconductor manufacturing apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0215647A true JPH0215647A (en) | 1990-01-19 |
Family
ID=15810341
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16533388A Pending JPH0215647A (en) | 1988-07-01 | 1988-07-01 | Semiconductor manufacturing apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0215647A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06242021A (en) * | 1992-07-22 | 1994-09-02 | Ohtori Kiko Co Ltd | Method and apparatus for detecting colored foreign matter in raw cotton |
| JP2002190509A (en) * | 2000-12-22 | 2002-07-05 | Mitsubishi Electric Corp | Inspection analysis method and semiconductor device |
| US7177716B2 (en) | 2004-02-28 | 2007-02-13 | Applied Materials, Inc. | Methods and apparatus for material control system interface |
| US7218983B2 (en) | 2003-11-06 | 2007-05-15 | Applied Materials, Inc. | Method and apparatus for integrating large and small lot electronic device fabrication facilities |
| US7221993B2 (en) | 2003-01-27 | 2007-05-22 | Applied Materials, Inc. | Systems and methods for transferring small lot size substrate carriers between processing tools |
| US7274971B2 (en) | 2004-02-28 | 2007-09-25 | Applied Materials, Inc. | Methods and apparatus for electronic device manufacturing system monitoring and control |
| US7413069B2 (en) | 2004-02-28 | 2008-08-19 | Applied Materials, Inc. | Methods and apparatus for transferring a substrate carrier within an electronic device manufacturing facility |
-
1988
- 1988-07-01 JP JP16533388A patent/JPH0215647A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06242021A (en) * | 1992-07-22 | 1994-09-02 | Ohtori Kiko Co Ltd | Method and apparatus for detecting colored foreign matter in raw cotton |
| JP2002190509A (en) * | 2000-12-22 | 2002-07-05 | Mitsubishi Electric Corp | Inspection analysis method and semiconductor device |
| US7221993B2 (en) | 2003-01-27 | 2007-05-22 | Applied Materials, Inc. | Systems and methods for transferring small lot size substrate carriers between processing tools |
| US7218983B2 (en) | 2003-11-06 | 2007-05-15 | Applied Materials, Inc. | Method and apparatus for integrating large and small lot electronic device fabrication facilities |
| US7177716B2 (en) | 2004-02-28 | 2007-02-13 | Applied Materials, Inc. | Methods and apparatus for material control system interface |
| US7274971B2 (en) | 2004-02-28 | 2007-09-25 | Applied Materials, Inc. | Methods and apparatus for electronic device manufacturing system monitoring and control |
| US7413069B2 (en) | 2004-02-28 | 2008-08-19 | Applied Materials, Inc. | Methods and apparatus for transferring a substrate carrier within an electronic device manufacturing facility |
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