JPS61117404A - Measuring instrument for film thickness - Google Patents
Measuring instrument for film thicknessInfo
- Publication number
- JPS61117404A JPS61117404A JP23967484A JP23967484A JPS61117404A JP S61117404 A JPS61117404 A JP S61117404A JP 23967484 A JP23967484 A JP 23967484A JP 23967484 A JP23967484 A JP 23967484A JP S61117404 A JPS61117404 A JP S61117404A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- thickness
- thin film
- film thickness
- wavelength
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
- G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Length Measuring Devices By Optical Means (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
本発明は膜厚測定装置に係り、特に半導体処理工程に（
おいてウェハ表面に形成される酸化膜等の厚さくＩＩ厚
）を測定する膜厚測定装置に関する。[Detailed Description of the Invention] [Technical Field of the Invention] The present invention relates to a film thickness measuring device, and particularly to a semiconductor processing process (
The present invention relates to a film thickness measuring device for measuring the thickness (II thickness) of an oxide film, etc. formed on the surface of a wafer.
（発明の技術的背景）
半導体処理工程においては、ウェハを各種の処理装置、
たとえばＣＶＤ装置で処理して、その表面に１膜を成長
させることが多い。このようなウェハ表面に形成される
薄膜の厚さは精度よく制御されなければならない。最も
一般的な膜厚の測定は、オペレータがウェハを目祝し、
形成された薄膜の干渉色からその薄膜の厚さを決定Ｊる
らのである。また、より精度を必要とりる場合には、処
理の終了したウェハを処理装置から取り出し、別の測定
装置を用いてその膜厚を測定している。(Technical Background of the Invention) In the semiconductor processing process, wafers are processed by various processing devices,
For example, a film is often grown on the surface by processing with a CVD device. The thickness of such a thin film formed on the wafer surface must be precisely controlled. The most common film thickness measurement is when an operator inspects a wafer and
The thickness of the formed thin film is determined from the interference color of the formed thin film. Furthermore, when greater precision is required, the wafer that has been processed is taken out of the processing device and its film thickness is measured using another measuring device.
しかしこのような目視による方法では、環境の変化たと
えば温度、ガス濃度、真空度などの微妙な変化によって
ウェハ表面上に形成される薄膜の厚さが変化した場合に
、′オペレータの主観によりその膜厚の決定がまちまち
になる可能性があり、また微妙な変化には追従できない
という欠点がある。However, with this visual inspection method, when the thickness of the thin film formed on the wafer surface changes due to subtle changes in the environment, such as temperature, gas concentration, degree of vacuum, etc., The disadvantage is that the thickness may be determined inconsistently and that it cannot follow subtle changes.
また、ある処理装置から取り出して別の測定装置により
測定をおこなう方法では、処理が終了し！、：後に別の
装置で測定してはじめて膜厚の変化に気がつく。そのた
め、例えば膜が薄いためさらに薄膜を成長させようとす
る場合には、再び処理装置にウェハを戻さなりればなら
ないという不便がある。In addition, with the method of taking the product out of one processing device and measuring it with another measuring device, the processing is completed! ,: Changes in film thickness are noticed only after measurement with another device. Therefore, for example, if the film is thin and a further thin film is to be grown, there is an inconvenience that the wafer must be returned to the processing apparatus again.
本発明は上述しＩＣ従来技術の欠点を解消すめためにな
されたもので、精度が高くしかもで被処理物品表面に形
成される薄膜の厚さをリアルタイム検出することのでき
る膜厚測定装置を提供することを目的とする。The present invention has been made in order to eliminate the above-mentioned drawbacks of the conventional IC technology, and provides a film thickness measuring device that is highly accurate and capable of real-time detection of the thickness of a thin film formed on the surface of a processed article. The purpose is to
上記の目的を達成するため本発明は、処理装置内にカラ
ーカメラを設け、被処理物品表面からの反射光をカラー
カメラでモニタして波長分析し、波長分析データをあら
かじめ用意したマスターデータと比較して被処理物品表
面の膜厚を算出するようにした膜厚測定装置を提供する
ものである。In order to achieve the above object, the present invention includes a color camera installed in the processing equipment, monitors the reflected light from the surface of the processed article with the color camera, analyzes the wavelength, and compares the wavelength analysis data with master data prepared in advance. The present invention provides a film thickness measuring device that calculates the film thickness on the surface of an article to be treated.
（発明の実施例）
以下、添附図面を参照して本発明の一実施例を説明する
。(Embodiment of the Invention) Hereinafter, an embodiment of the present invention will be described with reference to the accompanying drawings.
図は実施例に係る膜厚測定装置の構成図である。The figure is a configuration diagram of a film thickness measuring device according to an embodiment.
アンローダ部１に収納されたつＩハ２−１゜２−２．・
・・・・・・・・２−Ｎは一枚づつ搬送ベルト３を介し
て処理装置４に導入され、この処理装置４内でその表面
に薄い膜が形成される。処理の終了したウェハはローダ
部５に収納されてウェハ６−１．６−２．・・・・・・
・・・６−Ｎとなる。Ic2-1゜2-2 stored in the unloader section 1.・
. . . 2-N is introduced into the processing device 4 one by one via the conveyor belt 3, and a thin film is formed on the surface within the processing device 4. The processed wafers are stored in the loader section 5 and wafers 6-1, 6-2.・・・・・・
...6-N.
この処理装置４内にあるウェハの表面の薄膜の厚さを、
ウェハを処理装置４から取り出すことなくリアルタイム
で測定するために、下記の如き搬器を設ける。すなわち
、このウェハの表面に入射光を投光するための光源８と
、このウェハ７からの反射光を検出してその波長分析を
あこなうためのカラーカメラ９と、このカラーカメラ９
からの波長分析データをあらかじめ用意したマスターデ
ータと比較して、ウェハ表面に形成された薄膜の厚さを
算出するための画像処理部１０とである。The thickness of the thin film on the surface of the wafer in this processing device 4 is
In order to measure the wafer in real time without taking it out from the processing apparatus 4, a carrier as described below is provided. That is, a light source 8 for projecting incident light onto the surface of this wafer, a color camera 9 for detecting reflected light from this wafer 7 and analyzing its wavelength, and this color camera 9.
The image processing unit 10 compares the wavelength analysis data from the wafer with master data prepared in advance to calculate the thickness of the thin film formed on the wafer surface.
ウェハの表面に形成される薄膜の厚さが変化することに
より、光源８からの入射光が一定である揚台にはその反
射光の波長が変化する。この反射光をカラーカメラ９の
前段に取り付けた色フィルタ１１を介して検出する、二
とにより、反射光の波長を容易に分析することかできる
。このようにして分析された反射光の波長とウェハの表
面に形成された薄膜の厚さとの関係は、事前に実験等に
より求められており、画像処理部１０にマスタデータと
して貯蔵されている。なお、波長が同一でも処理装置４
内の雰囲気や形成される薄膜の種類によって必ずしも膜
厚は同一とはいえないので、これらの条件を加味してあ
らかじめ実験等により膜厚と波長との関係を求めておく
必要がある。このようにして、画像処理部１０に蓄積さ
れたマスターデータと、ウェハ７表面からの反射光を分
析して得られた波長分析データとを比較し、一致したデ
ータに対応するマスターデータからウェハ７表面の薄膜
の厚さを決定する口とができる。As the thickness of the thin film formed on the surface of the wafer changes, the wavelength of the reflected light changes even though the incident light from the light source 8 remains constant. The wavelength of the reflected light can be easily analyzed by detecting this reflected light through a color filter 11 installed upstream of the color camera 9. The relationship between the wavelength of the reflected light analyzed in this way and the thickness of the thin film formed on the surface of the wafer is determined in advance through experiments and the like, and is stored in the image processing section 10 as master data. Note that even if the wavelengths are the same, the processing device 4
Since the film thickness cannot necessarily be said to be the same depending on the internal atmosphere and the type of thin film formed, it is necessary to take these conditions into consideration and determine the relationship between film thickness and wavelength in advance through experiments or the like. In this way, the master data accumulated in the image processing unit 10 and the wavelength analysis data obtained by analyzing the reflected light from the surface of the wafer 7 are compared, and the master data corresponding to the matched data is selected from the wafer 7. A hole is formed that determines the thickness of the thin film on the surface.
なお上記の実施例のように被処理物品であるウェハ７が
搬送ベルト３に乗って移動している場合には、光［８お
よびカラーカメラ９もこれに同ＩＩさせて移動させるよ
うにし、常にリアルタイムでウェハ７の表面からの反射
光を検出するように構成する必要がある。Note that when the wafer 7, which is the article to be processed, is moving on the conveyor belt 3 as in the above embodiment, the light [8 and the color camera 9 are also moved along with the wafer 7, so that the light is always on. It is necessary to configure the device to detect reflected light from the surface of the wafer 7 in real time.
以上の如く本発明では、処理装置内に被処理物品を滞留
させた状態で膜厚の測定をおこなうに際し、カラーカメ
ラで被処理物品表面をモニタし、カラーカメラによる波
長分析データとあらかじめ用意したマスターデータを比
較して膜厚を算出するようにしたので、リアルタイムで
測定を行なうことのできる膜厚測定装置を得ることがで
きる。As described above, in the present invention, when measuring the film thickness while the object to be processed remains in the processing equipment, the surface of the object to be processed is monitored with a color camera, and wavelength analysis data from the color camera and a master prepared in advance are used. Since the film thickness is calculated by comparing the data, it is possible to obtain a film thickness measuring device that can perform measurements in real time.
このため、微妙な処理装置内の条件の変化に対応して膜
厚が変化しても、それに対応するｌｆｉを速かに採るこ
とができるという利点がある。また従来のように目視に
よる測定ではないため、ｆｆｉ度が飛躍的に向上する。Therefore, even if the film thickness changes in response to subtle changes in the conditions within the processing device, there is an advantage that the corresponding lfi can be quickly determined. Furthermore, since the measurement is not performed visually as in the conventional method, the ffi degree is dramatically improved.
図は本発明の一実施例の構成図である。
４・・・処理装置、７・・・ウェハ、８・・・光源、９
・・・カラーカメラ、１０・・・画像処理部。
出願人代理人 猪 股 清
図面の浄Ｅ：（内容に変１なし）
１図
手ｆｒ；−ン１１ 正 書 （方式）％式％
２ 発明の名称
膜厚測定装置
３ 補正をする者
ｌｊｓ件との関係 特許出願人
（３０７） 株式会社東芝
４代理人
昭和６０年２月６日
（発送１」 昭和６０年２月２６日）
６ 補正の３＝１象
明細７月の図面の簡単な説明の欄および図面。
７ 補正の内容
（１） 明ＨＩ古第７頁第２行の「図は」を「第１図
は］と訂正する。。The figure is a configuration diagram of an embodiment of the present invention. 4... Processing device, 7... Wafer, 8... Light source, 9
... Color camera, 10... Image processing section. Applicant's agent Kiyoshi Inomata Drafting of drawings E: (no change in content) 1 Drawing (method) % formula % 2 Name of the invention Film thickness measuring device 3 Person making the amendment Relationship with Patent Applicant (307) Toshiba Corporation 4th Agent February 6, 1985 (Shipping 1) February 26, 1985 6 Amendment 3 = 1 Brief explanation of drawings in July columns and drawings. 7 Contents of the amendment (1) In the second line of page 7 of the Meihi era, ``Figure wa'' is corrected to ``Figure 1 is''.
Claims (1)
を、前記処理装置内に前記被処理物品を滞留させた状態
で測定する膜厚測定装置において、前記被処理物品の表
面に入射光を与える光源と、前記被処理物品の表面から
の反射光を検出し、その波長分析をおこなうカラーカメ
ラと、前記波長分析データをあらかじめ用意したマスタ
ーデータと比較して前記被処理物品の表面に形成された
薄膜の厚さを算出する画像処理部とを備えたことを特徴
とする膜厚測定装置。In a film thickness measuring device that measures the thickness of a thin film formed on the surface of an article to be treated in a processing device while the article to be treated remains in the processing device, A light source that provides light, a color camera that detects reflected light from the surface of the object to be treated and performs wavelength analysis, and a color camera that compares the wavelength analysis data with master data prepared in advance to determine the surface of the object to be treated. A film thickness measuring device comprising: an image processing unit that calculates the thickness of a formed thin film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23967484A JPS61117404A (en) | 1984-11-14 | 1984-11-14 | Measuring instrument for film thickness |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23967484A JPS61117404A (en) | 1984-11-14 | 1984-11-14 | Measuring instrument for film thickness |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61117404A true JPS61117404A (en) | 1986-06-04 |
Family
ID=17048221
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23967484A Pending JPS61117404A (en) | 1984-11-14 | 1984-11-14 | Measuring instrument for film thickness |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61117404A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0443905A (en) * | 1990-06-12 | 1992-02-13 | Nippon Steel Corp | Method and instrument for measuring thickness of oxide film of steel strip |
| JP2011191252A (en) * | 2010-03-16 | 2011-09-29 | Nippon Steel Engineering Co Ltd | Surface quality evaluation method of metal and surface quality evaluation apparatus of metal |
| JP2020038162A (en) * | 2018-09-05 | 2020-03-12 | 日本電信電話株式会社 | Surface treatment system |
-
1984
- 1984-11-14 JP JP23967484A patent/JPS61117404A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0443905A (en) * | 1990-06-12 | 1992-02-13 | Nippon Steel Corp | Method and instrument for measuring thickness of oxide film of steel strip |
| JP2011191252A (en) * | 2010-03-16 | 2011-09-29 | Nippon Steel Engineering Co Ltd | Surface quality evaluation method of metal and surface quality evaluation apparatus of metal |
| JP2020038162A (en) * | 2018-09-05 | 2020-03-12 | 日本電信電話株式会社 | Surface treatment system |
| WO2020050024A1 (en) * | 2018-09-05 | 2020-03-12 | 日本電信電話株式会社 | Surface processing system |
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