JPH02153900A - Production of silicon nitride whisker - Google Patents
Production of silicon nitride whiskerInfo
- Publication number
- JPH02153900A JPH02153900A JP30935088A JP30935088A JPH02153900A JP H02153900 A JPH02153900 A JP H02153900A JP 30935088 A JP30935088 A JP 30935088A JP 30935088 A JP30935088 A JP 30935088A JP H02153900 A JPH02153900 A JP H02153900A
- Authority
- JP
- Japan
- Prior art keywords
- silicon nitride
- coke
- carbonaceous substance
- supporting
- polysiloxanes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052581 Si3N4 Inorganic materials 0.000 title claims abstract description 20
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 title claims abstract description 18
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims abstract description 15
- 239000003575 carbonaceous material Substances 0.000 claims abstract description 14
- 229910001873 dinitrogen Inorganic materials 0.000 claims abstract description 13
- 239000004205 dimethyl polysiloxane Substances 0.000 claims abstract description 8
- 235000013870 dimethyl polysiloxane Nutrition 0.000 claims abstract description 8
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims abstract description 8
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims abstract 4
- 150000003961 organosilicon compounds Chemical class 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 17
- 229920001296 polysiloxane Polymers 0.000 abstract description 14
- -1 polysiloxanes Polymers 0.000 abstract description 14
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 11
- 239000000835 fiber Substances 0.000 abstract description 11
- 239000000571 coke Substances 0.000 abstract description 8
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 8
- 239000000377 silicon dioxide Substances 0.000 abstract description 8
- 239000000126 substance Substances 0.000 abstract description 5
- 238000010438 heat treatment Methods 0.000 abstract description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 2
- 239000002010 green coke Substances 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000001354 calcination Methods 0.000 abstract 1
- 239000011329 calcined coke Substances 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- 239000011368 organic material Substances 0.000 abstract 1
- 150000003377 silicon compounds Chemical class 0.000 abstract 1
- 238000000034 method Methods 0.000 description 11
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 9
- 229910052799 carbon Inorganic materials 0.000 description 5
- 239000007789 gas Substances 0.000 description 4
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- 125000001424 substituent group Chemical group 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229920002239 polyacrylonitrile Polymers 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000004098 selected area electron diffraction Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- VZSRBBMJRBPUNF-UHFFFAOYSA-N 2-(2,3-dihydro-1H-inden-2-ylamino)-N-[3-oxo-3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)propyl]pyrimidine-5-carboxamide Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C(=O)NCCC(N1CC2=C(CC1)NN=N2)=O VZSRBBMJRBPUNF-UHFFFAOYSA-N 0.000 description 1
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 description 1
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- 235000002597 Solanum melongena Nutrition 0.000 description 1
- 244000061458 Solanum melongena Species 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 125000003277 amino group Chemical group 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 229910002090 carbon oxide Inorganic materials 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- RAABOESOVLLHRU-UHFFFAOYSA-N diazene Chemical compound N=N RAABOESOVLLHRU-UHFFFAOYSA-N 0.000 description 1
- 229910000071 diazene Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 125000003700 epoxy group Chemical group 0.000 description 1
- 125000001033 ether group Chemical group 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000002006 petroleum coke Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【発明の詳細な説明】
〈産業上の利用分野〉
本発明は耐熱性複合材の充填材として有用な窒化ケイ素
ホイスカーを製造する方法に関するものである。さらに
詳しく述べると、ジメチルポリシロキサン、エーテルメ
チルポリシロキサン、メチルアルキルポリシロキサンの
特定の化学構造を有する有機ケイ素化合物から窒素ガス
中、１２００〜１５００℃で加熱することにより窒化ケ
イ素ホイスカーを生成させる方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION <Industrial Application Field> The present invention relates to a method for producing silicon nitride whiskers useful as fillers in heat-resistant composite materials. More specifically, it relates to a method for producing silicon nitride whiskers from organosilicon compounds having specific chemical structures such as dimethylpolysiloxane, ethermethylpolysiloxane, and methylalkylpolysiloxane by heating at 1200 to 1500°C in nitrogen gas. It is something.
〈従来の技術と問題点〉
窒化ケイ素ホイスカーの製造方法については既にいくつ
かの方法が提案されている。例えば、二酸化ケイ素とア
ルミニュウムを混合、粒状化した後、窒素ガス気流中−
酸化炭素供給源の存在下１４００〜１８００℃で処理す
る（特公昭５８−５４１２０号公報）窒化ケイ素と二酸
化ケイ素等の酸化物の成形体を窒素ガス雰囲気中、１４
００〜１９００℃で処理する方法（特開昭６１−１４２
００号公報）、二酸化ケイ素に一酸化炭素ガスを１１０
０℃以上で接触させて一酸化ケイ素ガスと炭素ガスの混
合ガスに窒素ガスを添加して生成させる方法（特開昭６
２−８７４９７号公報）がある。これらの方法はいずれ
も二酸化ケイ素や窒化ゲイ素の無機化合物を主成分とす
るもので、二酸化ケイ素を原料とする場合には一酸化ケ
イ素まで還元しなければならないという問題がある。ま
た、二酸化ケイ素とアルミニュウムの成形体や窒化ケイ
素と酸化物の成形体を用いる場合は窒化ケイ素ホイスカ
ーの生成量が少ないという問題がある。<Prior Art and Problems> Several methods have already been proposed for producing silicon nitride whiskers. For example, after mixing and granulating silicon dioxide and aluminum, in a nitrogen gas stream -
Treated at 1400 to 1800°C in the presence of a carbon oxide source (Japanese Patent Publication No. 58-54120) A molded body of oxides such as silicon nitride and silicon dioxide is heated in a nitrogen gas atmosphere for 14 hours.
Method of treatment at 00 to 1900°C
No. 00), carbon monoxide gas was added to silicon dioxide at 110%
A method in which nitrogen gas is added to a mixed gas of silicon monoxide gas and carbon gas by bringing them into contact at 0°C or higher (Japanese Patent Laid-Open No. 6
2-87497). All of these methods use inorganic compounds such as silicon dioxide or silicon nitride as main components, and when using silicon dioxide as a raw material, there is a problem in that it must be reduced to silicon monoxide. Furthermore, when a molded body of silicon dioxide and aluminum or a molded body of silicon nitride and oxide is used, there is a problem that the amount of silicon nitride whiskers produced is small.
一方、四塩化ケイ素とアンモニアの反応により生成する
シリコンジイミドをアンモニアガス、窒素ガスと水素ガ
ス中、１３００〜１４５０℃で熱分解させて製造する方
法がある（特開昭６０−１９５０９９号公報）。On the other hand, there is a method of producing silicon diimide produced by the reaction of silicon tetrachloride and ammonia by thermally decomposing it at 1300 to 1450 DEG C. in ammonia gas, nitrogen gas and hydrogen gas (Japanese Patent Application Laid-open No. 195099/1983).
この方法では原料が必ずしも安価でないことおよび高温
での水素ガスの使用に問題がある。This method has problems in that the raw materials are not necessarily cheap and in the use of hydrogen gas at high temperatures.
く問題を解決する手段〉
本発明者らは上記の問題を解決するためには簡単な操作
によって窒化ケイ素ホイスカーを製造する方法を見出す
ことが必要であると考え、種々検索した結果、本発明を
なすに至った。Means for Solving the Problems> In order to solve the above problems, the present inventors believed that it was necessary to find a method for manufacturing silicon nitride whiskers by simple operations, and as a result of various searches, the present inventors discovered the present invention. I arrived at the eggplant.
本発明の方法は有機ケイ素化合物の１つであるポリシロ
キサンを基本構造とし、置換基を持つポリシロキサン類
のうち、ジメチルポリシロキサン、エーテルメチルポリ
シロキサン、メチルアルキルポリシロキサンを炭素質物
質に担持し、これを窒素ガス気流中、１２００〜！５０
０℃に加熱処理することにより、窒化ケイ素ホイスカー
を生成させるものである。The method of the present invention has a basic structure of polysiloxane, which is an organosilicon compound, and supports dimethylpolysiloxane, ethermethylpolysiloxane, and methylalkylpolysiloxane among polysiloxanes having substituents on a carbonaceous material. , in a nitrogen gas stream, 1200~! 50
Silicon nitride whiskers are generated by heat treatment at 0°C.
本発明で用いられるポリシロキサン類は置換基としてメ
チル基等のアルキル基、エーテル基を持つポリシロキサ
ンであって、他の置換基、例えば、カルボキシル基、ア
ミノ基、エポキシ基等の置換基を持つポリシロキサンで
は窒化ケイ素ボイスカーは生成しない。The polysiloxanes used in the present invention are polysiloxanes having an alkyl group such as a methyl group or an ether group as a substituent, and have other substituents such as a carboxyl group, an amino group, an epoxy group, etc. Polysiloxanes do not produce silicon nitride voice cars.
これらのポリシロキサン類を担持する炭素質物質はコー
クス、繊維、活性炭であり、他の無機物、例えば、アル
ミナ、二酸化ケイ素ではホイスカーは生成しないか、生
成しても非常に少量である。The carbonaceous materials supporting these polysiloxanes are coke, fibers, and activated carbon; other inorganic materials such as alumina and silicon dioxide do not produce whiskers, or even if they do, the whiskers are produced in very small amounts.
多量に生成させるためには上記炭素質物質に担持させる
必要がある。コークスには未だ数％の揮発性成分（有機
物）を含有する生コークスとこれを焼成したカルサイン
コークスがあるが、これらのいずれも用いることが出来
る。繊維の場合も同様である。コークスは担持量を増加
させるために微粉砕した方がよい。In order to produce a large amount, it is necessary to support the above carbonaceous material. There are two types of coke, raw coke that still contains a few percent of volatile components (organic substances) and calcine coke that is calcined, and either of these can be used. The same applies to fibers. It is better to pulverize the coke in order to increase the amount of coke supported.
炭素質物質にポリシロキサン類を担持する方法はポリシ
ロキサン類を溶解させる溶媒、例えば、ベンゼン、トル
エンに溶解し、これに炭素質物質を加えた後、溶媒を除
去する０次いで、炭素材料で製作した容器にポリシロキ
サン類を担持した炭素質物質を入れ、窒素ガス中で１２
００〜１５００℃の温度範囲で、望ましくは１３００〜
１５００℃で加熱する。１２００℃以下であると、窒化
ケイ素ホイスカーは殆ど生成しない、また、１５００℃
以上で加熱してもホイスカーの生成量は増加しない、保
持時間は１時間以上であればよい。The method of supporting polysiloxanes on a carbonaceous material is to dissolve the polysiloxane in a solvent such as benzene or toluene, add the carbonaceous material thereto, and then remove the solvent. A carbonaceous material carrying polysiloxanes was placed in a heated container and heated for 12 hours in nitrogen gas.
00~1500℃, preferably 1300~
Heat at 1500°C. At temperatures below 1200°C, silicon nitride whiskers are hardly produced;
Even if heated above, the amount of whiskers produced does not increase, and the holding time may be 1 hour or more.
以上の操作によって、窒化ケイ素ボイスカーは炭素容器
のポリシロキサンを担持した炭素質物質を設置した位置
より窒素ガスの流れる方向に離れた所に白色の膜状で生
成する。したがって、これを適当な方法、例えば、ナイ
フ等の鋭利な刃物ではく離させるかあるいはきれいな布
で拭取ることによって容易に回収することができる０回
収したものに容器の一部分が混入することがあるが、こ
のときは空気中、５００〜６００℃で処理すれば混入物
を簡単に取り除くことができる。By the above operations, the silicon nitride voice car is produced in the form of a white film at a location away from the position of the carbon container in which the carbonaceous material supporting polysiloxane is installed in the direction of flow of nitrogen gas. Therefore, it can be easily recovered by an appropriate method, for example, by peeling it off with a sharp edged object such as a knife or wiping it with a clean cloth. In this case, contaminants can be easily removed by processing in air at 500 to 600°C.
なお、炭素質物質として、アクリロニトリル繊維、これ
は焼成することによっていわゆるＰＡＮ系炭素繊維にな
るものであるが、この繊維にジメチルポリシロキサンを
担持させたものを１００〜１２００℃で加熱処理すると
、繊維状物が炭素容器表面に黒色のカビが生えたような
状態で生成することがある。これは炭素であって、窒化
ケイ素ではないので、注意する必要がある。The carbonaceous material used is acrylonitrile fiber, which becomes so-called PAN-based carbon fiber when fired. When this fiber is loaded with dimethylpolysiloxane and heat-treated at 100 to 1200°C, the fiber becomes A black mold-like substance may form on the surface of the carbon container. This is carbon, not silicon nitride, so care must be taken.
以下、実施例を挙げて本発明の方法を更に詳しく説明す
る。Hereinafter, the method of the present invention will be explained in more detail with reference to Examples.
実施例１
ジメチルポリシロキサン１ｇをビーカーに採取し、これ
にトルエンｌｏｍｔ’を加え、溶解した。この溶液にら
いかい機で平均粒子径７μｍに粉砕した石油コークス１
０ｇを加え、混合した後、８０°Ｃに加熱してトルエン
を除いた。これを幅２５ｍｍ、高さ２０閣、長さ５００
Ｍの黒鉛製容器の一端に入れ、黒鉛製板で蓋をした。こ
れを長さｌｏｏｏｎｍの横型管状炉に試料が窒素ガス導
入口の近くになるように設置した。ついで、窒素ガスを
５ＱＱｍｍ／ｍｉｎで流しながら、毎分５℃の速度で１
４００℃まで加熱し、１時間保持した。室温まで冷却し
た後、容器を取り出した所、試料から離れた容器表面は
白色生成物で覆われていた。これを、布で拭取り、重量
を測定した結果、０．０９ｇであった。走査型電子顕微
鏡で形状を観察した所、第１図に示すように、直径的１
〜２μｍ、長さは数閣におよぶ表面平滑な繊維であった
。そこで、透過型電子閉微鏡による制限視野電子線回折
によって、立方晶に単結晶であり、Ｘ線回折の結果から
、α−窒化ケイ素であることがわかった。Example 1 1 g of dimethylpolysiloxane was collected in a beaker, and toluene lomt' was added thereto to dissolve it. Petroleum coke 1 crushed in this solution to an average particle size of 7 μm using a milling machine
After adding 0 g and mixing, the mixture was heated to 80°C to remove toluene. This has a width of 25 mm, a height of 20 mm, and a length of 50 mm.
It was placed in one end of a M graphite container and covered with a graphite plate. This was placed in a horizontal tube furnace having a length of 1000 m so that the sample was near the nitrogen gas inlet. Then, while flowing nitrogen gas at a rate of 5QQmm/min, the temperature was 1°C at a rate of 5°C per minute.
It was heated to 400°C and held for 1 hour. When the container was taken out after cooling to room temperature, the surface of the container away from the sample was covered with a white product. This was wiped with a cloth and the weight was measured, and the result was 0.09 g. When the shape was observed using a scanning electron microscope, it was found that the diameter was 1 as shown in Figure 1.
The fibers were approximately 2 μm in length and had a smooth surface. Selected area electron diffraction using a transmission electron microscope revealed that the material was a cubic single crystal, and X-ray diffraction revealed that it was α-silicon nitride.
上記と同様にして、メチルアルキルポリシロキサン、ポ
リエーテルポリシロキサンを用いて加熱した所、ジメチ
ルポリシロキサンの場合と同様な白色生成物が認められ
、回収した生成物の量は前者が０．０４ｇ、後者が０．
０５ ｇであった。しかし、カルボキシルメチルポリシ
ロキサンおよびエポキシメチルポリシロキサンの場合は
白色生成物は全く生成せず、アミノメチルポリシロキサ
ンの場合は非常に少量であった。When methylalkylpolysiloxane and polyetherpolysiloxane were heated in the same manner as above, a white product similar to that of dimethylpolysiloxane was observed, and the amount of recovered product was 0.04g for the former; The latter is 0.
It was 0.5 g. However, in the case of carboxylmethylpolysiloxane and epoxymethylpolysiloxane, no white product was produced, and in the case of aminomethylpolysiloxane, only a very small amount was produced.
実施例２
ポリアクリロニトリル繊維にジメチルポリシロキサンを
実施例１と同様にして塗付した。これを同様の操作によ
って１０００−１２００℃に１時間処理した所、容器、
蓋の表面全体に黒色の生成物が認められた。これを回収
して走査型電子顕微鏡で観察した結果、直径的０．５μ
ｍの表面凹凸のある繊維であった。Ｘ線マイクロアナラ
イザーで元素組成を分析した結果、この繊維は炭素であ
ることがわかった。Example 2 Dimethylpolysiloxane was applied to polyacrylonitrile fibers in the same manner as in Example 1. When this was treated in the same manner at 1000-1200℃ for 1 hour, the container
A black product was observed on the entire surface of the lid. As a result of collecting this and observing it with a scanning electron microscope, it was found that the diameter was 0.5μ.
The fiber had an uneven surface of m. Analysis of the elemental composition using an X-ray microanalyzer revealed that this fiber was carbon.
上記の１０００〜１２００℃で処理した繊維を再び１４
００℃で１時間処理した所、容器、蓋には一面白色物が
生成していた。この回収した量は０．０８ ｇであり、
制限視野電子線回折とＸ線回折の結果から、実施例１と
同様にα−窒化ケイ素であった。The fibers treated at 1000 to 1200°C were reused at 14°C.
After treatment at 00°C for 1 hour, a white colored substance was formed on the container and lid. The amount recovered was 0.08 g,
From the results of selected area electron diffraction and X-ray diffraction, it was found to be α-silicon nitride as in Example 1.
〈発明の効果〉
上で説明したように、本発明はポリシロキサン類を炭素
質物質に担持させ、窒素ガス気流中、１２００℃以上で
加熱処理するという簡単な操作で、単結晶のα−窒化ケ
イ素が製造できる。したがって、多量生産する工業的製
造方法として最適であると考えられる。<Effects of the Invention> As explained above, the present invention enables α-nitridation of single crystals by a simple operation of supporting polysiloxanes on a carbonaceous material and heat-treating the same at 1200°C or higher in a nitrogen gas stream. Silicon can be produced. Therefore, it is considered to be optimal as an industrial manufacturing method for mass production.
第１図は実施例１で生成した窒化ケイ素ボイスカーの形
状を示す写真である。（倍率１０００倍）。
第１図FIG. 1 is a photograph showing the shape of the silicon nitride voice car produced in Example 1. (1000x magnification). Figure 1
Claims (1)
エーテルメチルポリシロキサン、メチルアルキルポリシ
ロキサンを炭素質物質に担持し、窒素ガス気流中１２０
０〜１５００℃で処理することを特徴とする窒化ケイ素
ホイスカーの製造方法。1. Dimethylpolysiloxane, which is an organosilicon compound;
Ether methylpolysiloxane or methylalkylpolysiloxane is supported on a carbonaceous material and heated at 120% in a nitrogen gas stream.
A method for producing silicon nitride whiskers, characterized by processing at 0 to 1500°C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30935088A JPH02153900A (en) | 1988-12-06 | 1988-12-06 | Production of silicon nitride whisker |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30935088A JPH02153900A (en) | 1988-12-06 | 1988-12-06 | Production of silicon nitride whisker |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02153900A true JPH02153900A (en) | 1990-06-13 |
| JPH0476958B2 JPH0476958B2 (en) | 1992-12-07 |
Family
ID=17991951
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30935088A Granted JPH02153900A (en) | 1988-12-06 | 1988-12-06 | Production of silicon nitride whisker |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02153900A (en) |
-
1988
- 1988-12-06 JP JP30935088A patent/JPH02153900A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0476958B2 (en) | 1992-12-07 |
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