JPH02137393A - Mounting of semiconductor device - Google Patents
Mounting of semiconductor deviceInfo
- Publication number
- JPH02137393A JPH02137393A JP63291604A JP29160488A JPH02137393A JP H02137393 A JPH02137393 A JP H02137393A JP 63291604 A JP63291604 A JP 63291604A JP 29160488 A JP29160488 A JP 29160488A JP H02137393 A JPH02137393 A JP H02137393A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- vacuum
- temperature
- circuit board
- printed circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 50
- 238000000034 method Methods 0.000 claims abstract description 15
- 229910000679 solder Inorganic materials 0.000 claims abstract description 14
- 239000003960 organic solvent Substances 0.000 claims abstract description 9
- 229920006395 saturated elastomer Polymers 0.000 claims abstract description 4
- 238000010438 heat treatment Methods 0.000 claims description 10
- 230000008016 vaporization Effects 0.000 claims 1
- 238000009834 vaporization Methods 0.000 claims 1
- 239000011261 inert gas Substances 0.000 abstract description 6
- 230000008646 thermal stress Effects 0.000 abstract description 4
- 238000005476 soldering Methods 0.000 abstract description 2
- 230000000694 effects Effects 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000008267 milk Substances 0.000 description 1
- 210000004080 milk Anatomy 0.000 description 1
- 235000013336 milk Nutrition 0.000 description 1
- RVZRBWKZFJCCIB-UHFFFAOYSA-N perfluorotributylamine Chemical compound FC(F)(F)C(F)(F)C(F)(F)C(F)(F)N(C(F)(F)C(F)(F)C(F)(F)C(F)(F)F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F RVZRBWKZFJCCIB-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/341—Surface mounted components
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体装置をプリント基板等に実装する方法に
関し、特に実装時の熱ストレスにより半導体装置が破壊
されることを防止する、半導体装置の実装方法に関する
。[Detailed Description of the Invention] [Field of Industrial Application] The present invention relates to a method for mounting a semiconductor device on a printed circuit board, etc., and in particular to a method for mounting a semiconductor device on a printed circuit board, etc., which prevents the semiconductor device from being destroyed due to thermal stress during mounting. Regarding implementation method.
従来、こ種の半導体装置の実装方法は、プリント基板と
半導体装置の端子との間に半田を置き、有機溶剤の飽和
蒸気中で半導体装置を加熱したり、赤外線を半導体装置
に照射し加熱したりして、半田をリフローし、半導体装
置をプリント基板に実装していた。Traditionally, this type of semiconductor device mounting method involves placing solder between a printed circuit board and the terminals of the semiconductor device, and heating the semiconductor device in saturated vapor of an organic solvent or by irradiating the semiconductor device with infrared rays. The semiconductor devices were mounted on printed circuit boards by reflowing the solder.
上述した従来の半導体装置の実装方法は、半導体の内部
に含まれる水分が、半田のりフロー温度である２００℃
〜３００℃程度の温度に加熱されることにより、液体か
ら気体へ気化するときの体積膨張で内部にストレスを発
生し、このストレスにより半導体装置を破壊するという
欠点がある。In the conventional semiconductor device mounting method described above, moisture contained inside the semiconductor is heated to 200°C, which is the solder paste flow temperature.
When heated to a temperature of about 300° C., stress is generated inside due to volume expansion when the liquid is vaporized into a gas, and this stress has the drawback of destroying the semiconductor device.
本発明の半導体装置の実装方法は、半導体装置およびプ
リント基板を０．００１気圧以下の真空中で５０℃以上
１５０℃以下の温度で加熱する第一の工程と、有機溶剤
の飽和蒸気中で半導体装置を２００℃以上３００℃以下
に加熱する工程とを有している。The semiconductor device mounting method of the present invention includes a first step of heating a semiconductor device and a printed circuit board at a temperature of 50° C. or higher and 150° C. or lower in a vacuum of 0.001 atm or lower; The method includes a step of heating the device to a temperature of 200° C. or more and 300° C. or less.
本発明の半導体装置の実装方法は、前記第一の工程とｏ
、ｏｏｔ気圧以下の真空中で赤外線を半導体装置に照射
し、半導体装置を２００℃以上３００℃以下に加熱する
工程とを有している。The semiconductor device mounting method of the present invention includes the first step and o.
, a step of irradiating the semiconductor device with infrared rays in a vacuum at a pressure below oot pressure and heating the semiconductor device to a temperature of 200° C. or higher and 300° C. or lower.
本発明の半導体装置の実装方法は、前記第二の工程とＮ
２の不活性気体中で赤外線を半導体装置を２００℃以上
３００℃以下に加熱する工程とを有している。The semiconductor device mounting method of the present invention includes the second step and N
2, heating the semiconductor device with infrared rays to a temperature of 200° C. or more and 300° C. or less in an inert gas.
第１図は本発明の一実施例の断面図である。真空容器１
の中に半導体装置２とプリント基板３および半田（図示
しない）をセットする。真空ポンプ４で真空容器１を０
．００１気圧以下の真空にし、ヒータ５で５０℃以上１
５０℃以下の温度に加熱し、半導体装置２の内部の水分
を除去する。FIG. 1 is a sectional view of an embodiment of the present invention. Vacuum container 1
The semiconductor device 2, printed circuit board 3, and solder (not shown) are set in the inside. Vacuum container 1 is set to 0 using vacuum pump 4.
．． Create a vacuum of 0.001 atm or less and heat it to 50°C or higher with heater 5.
The semiconductor device 2 is heated to a temperature of 50° C. or lower to remove moisture inside the semiconductor device 2 .
次に、真空ポンプ４を停止し、有機溶剤タンク６からフ
ロリナート等の有機溶剤を真空容器ｌに導入し、しかる
後、ヒータ５で２００℃〜３００℃の温度に半導体装置
２を加熱し、半田リフローにより、半導体装置２をプリ
ント基板３にに半田付は実装する。Next, the vacuum pump 4 is stopped, an organic solvent such as Fluorinert is introduced from the organic solvent tank 6 into the vacuum container L, and then the semiconductor device 2 is heated to a temperature of 200°C to 300°C with the heater 5 and soldered. The semiconductor device 2 is soldered and mounted on the printed circuit board 3 by reflow.
第２図は本発明の他の実施例の断面図である。FIG. 2 is a sectional view of another embodiment of the invention.
真空容器１の中に半導体装置２とプリント基板３および
半田（図示しない）をセット家る。真空ポンプ４で真空
容器１を０．００１気圧以下の真空にし、ヒータ５で５
０℃以上１５０℃以下の温度に加熱し、半導体装置２の
内部の水分を除去する。A semiconductor device 2, a printed circuit board 3, and solder (not shown) are set in a vacuum container 1. The vacuum container 1 is evacuated to 0.001 atmosphere or less using the vacuum pump 4, and the heater 5 is used to
The semiconductor device 2 is heated to a temperature of 0° C. or higher and 150° C. or lower to remove moisture inside the semiconductor device 2 .
次に赤外線ヒータ７で２００℃〜３００℃の温度に半導
体装置２を加熱し、半田リフローにより、半導体装置２
をプリント基板３に半田付実装する。Next, the semiconductor device 2 is heated to a temperature of 200° C. to 300° C. with the infrared heater 7, and the semiconductor device 2 is heated by solder reflow.
is mounted on the printed circuit board 3 by soldering.
第３図は本発明のさらに他の実施例の断面図である。真
空容器ｌの中に半導体装置２とプリント基板３および半
田（図示しない）をセットする。FIG. 3 is a sectional view of still another embodiment of the present invention. A semiconductor device 2, a printed circuit board 3, and solder (not shown) are set in a vacuum container l.
真空ポンプ４で真空容器１をｏ、ｏｏｉ気圧以下の真空
にし、ヒータ５で５０℃以上１５０℃以下の温度に加熱
し、半導体装置２の内部の水分を除去する。The vacuum container 1 is evacuated to a pressure of o, ooi or less using the vacuum pump 4, and heated to a temperature of 50° C. or higher and 150° C. or lower using the heater 5 to remove moisture inside the semiconductor device 2.
次に、真空ポンプ４を停止し、不活性気体タンク８から
Ｎ２等の不活性気体を真空容器１に導入する。Next, the vacuum pump 4 is stopped, and an inert gas such as N2 is introduced into the vacuum container 1 from the inert gas tank 8.
しかる後、赤外線ヒータ７で２００℃〜３００℃の温度
に半導体装置２を加熱し、半田リフローにより、半導体
装置２をプリント基板３に半田付実装する。Thereafter, the semiconductor device 2 is heated to a temperature of 200° C. to 300° C. with the infrared heater 7, and the semiconductor device 2 is soldered and mounted on the printed circuit board 3 by solder reflow.
以上説明したように本発明は、半導体装置を０．００１
気圧の真空中で５０℃以上１５０℃以下の温度に加熱し
、半導体装置内部の水分を除去する工程と、真空中又は
有機溶剤の飽和蒸気中又はＮ２等の不活性気体中の様な
水分を含まない条件下で半導体装置を半田リフロー温度
２００℃〜３００℃に加熱し、半導体装置をプリント基
板に実装する工程を連続して行なうことにより、半田実
装時の水分と熱ストレスによる半導体装置の破壊を防止
できる効果がある。As explained above, the present invention provides a semiconductor device with 0.001
A process of heating to a temperature of 50°C or more and 150°C or less in a vacuum at atmospheric pressure to remove moisture inside the semiconductor device, and removing moisture such as in a vacuum, in saturated vapor of an organic solvent, or in an inert gas such as N2. By successively performing the process of heating the semiconductor device to a solder reflow temperature of 200°C to 300°C and mounting the semiconductor device on a printed circuit board under conditions that do not contain moisture, damage to the semiconductor device due to moisture and thermal stress during solder mounting is avoided. It has the effect of preventing
発明の第三の実施例の断面図である。FIG. 3 is a cross-sectional view of a third embodiment of the invention.
１・・・・・・真空容器、２・・・・・・半導体装置、
３・・・・・・プリント基板、４・・・・・・真空ポン
プ、５・・・・・・ヒータ、６・・・・・・有機溶剤タ
ンク、７・・・・・・赤外線ヒータ、８・・・・・・不
活性気体タンク。1... Vacuum container, 2... Semiconductor device,
3... Printed circuit board, 4... Vacuum pump, 5... Heater, 6... Organic solvent tank, 7... Infrared heater, 8...Inert gas tank.
代理人 弁理士 内 原 晋Agent: Patent Attorney Susumu Uchihara
第１図は本発明の第一の実施例の断面図、第２図は本発
明の第二の実施例の断面図、第３図は本／ 真望容５
２ 半算体乳１
３ プリント基、４２乏、
４ 真空ポこンヂ
６ ヒータ
ｌ 角機斑斉Ｕタンク
第１ 図
／ 其墾暮恭
２ ＄−算体茨亙
３ プ°リント基叛
４ 其整ボンフ゛
６ し−夕
７ ＡＬタトオ事、Ｂ−タ
月ａ図Fig. 1 is a cross-sectional view of the first embodiment of the present invention, Fig. 2 is a cross-sectional view of the second embodiment of the present invention, and Fig. 3 is a book/Maboyo 5 2 Hanban Body Milk 1 3 Print. Base, 42, 4 Vacuum switch 6 Heater 1 Kakuchi Matsuji U tank 1 Figure / 2 AL Tatooji, B-ta month a figure
Claims (1)
の真空中で５０℃以上１５０℃以下の温度で加熱する工
程と、有機溶剤の飽和蒸気中，真空中、または不活性気
化中で前記半導体装置を２００℃以上３００℃以下の半
田リフロー温度に加熱する工程とを含むことを特徴とす
る半導体装置の実装方法。A step of heating the semiconductor device and the printed circuit board at a temperature of 50° C. or more and 150° C. or less in a vacuum of 0.001 atmosphere or less, and heating the semiconductor device and the printed circuit board in a saturated vapor of an organic solvent, in a vacuum, or in an inert vaporization process for 200°C. A method for mounting a semiconductor device, comprising the step of heating to a solder reflow temperature of .degree. C. or higher and 300.degree. C. or lower.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63291604A JPH02137393A (en) | 1988-11-18 | 1988-11-18 | Mounting of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63291604A JPH02137393A (en) | 1988-11-18 | 1988-11-18 | Mounting of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02137393A true JPH02137393A (en) | 1990-05-25 |
Family
ID=17771097
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63291604A Pending JPH02137393A (en) | 1988-11-18 | 1988-11-18 | Mounting of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02137393A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02226794A (en) * | 1988-12-27 | 1990-09-10 | Ncr Corp | Treatment of plastic package electronic device |
| JPH06268359A (en) * | 1993-03-11 | 1994-09-22 | Nippon Dennetsu Keiki Kk | Soldering method |
| US5994165A (en) * | 1997-02-05 | 1999-11-30 | Nec Corporation | Method for mounting a semiconductor chip |
| JP2001168505A (en) * | 1999-12-09 | 2001-06-22 | Matsushita Electric Ind Co Ltd | Method of mounting work provided with bump |
| JP2007027623A (en) * | 2005-07-21 | 2007-02-01 | Fuji Electric Device Technology Co Ltd | Method for removing moisture adsorbed on substrate |
-
1988
- 1988-11-18 JP JP63291604A patent/JPH02137393A/en active Pending
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02226794A (en) * | 1988-12-27 | 1990-09-10 | Ncr Corp | Treatment of plastic package electronic device |
| JPH06268359A (en) * | 1993-03-11 | 1994-09-22 | Nippon Dennetsu Keiki Kk | Soldering method |
| US5994165A (en) * | 1997-02-05 | 1999-11-30 | Nec Corporation | Method for mounting a semiconductor chip |
| JP2001168505A (en) * | 1999-12-09 | 2001-06-22 | Matsushita Electric Ind Co Ltd | Method of mounting work provided with bump |
| JP2007027623A (en) * | 2005-07-21 | 2007-02-01 | Fuji Electric Device Technology Co Ltd | Method for removing moisture adsorbed on substrate |
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