JPH02135767A - Formation of pattern and brazing method - Google Patents
Formation of pattern and brazing methodInfo
- Publication number
- JPH02135767A JPH02135767A JP63288842A JP28884288A JPH02135767A JP H02135767 A JPH02135767 A JP H02135767A JP 63288842 A JP63288842 A JP 63288842A JP 28884288 A JP28884288 A JP 28884288A JP H02135767 A JPH02135767 A JP H02135767A
- Authority
- JP
- Japan
- Prior art keywords
- brazing material
- pattern
- conductor pattern
- metal layer
- electromagnetic waves
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005219 brazing Methods 0.000 title claims abstract description 42
- 238000000034 method Methods 0.000 title claims description 24
- 230000015572 biosynthetic process Effects 0.000 title description 2
- 229910052751 metal Inorganic materials 0.000 claims abstract description 45
- 239000002184 metal Substances 0.000 claims abstract description 45
- 239000000463 material Substances 0.000 claims abstract description 41
- 239000004020 conductor Substances 0.000 claims abstract description 37
- 239000000758 substrate Substances 0.000 claims description 14
- 150000002739 metals Chemical class 0.000 claims description 7
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 239000010410 layer Substances 0.000 abstract description 24
- 239000002344 surface layer Substances 0.000 abstract description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 28
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 15
- 229910052737 gold Inorganic materials 0.000 description 15
- 239000010931 gold Substances 0.000 description 15
- 229910052759 nickel Inorganic materials 0.000 description 14
- 239000000919 ceramic Substances 0.000 description 10
- 239000000945 filler Substances 0.000 description 8
- 229910045601 alloy Inorganic materials 0.000 description 6
- 239000000956 alloy Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 239000011521 glass Substances 0.000 description 5
- 238000005476 soldering Methods 0.000 description 4
- 230000006378 damage Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- JGRGMDZIEXDEQT-UHFFFAOYSA-N [Cl].[Xe] Chemical compound [Cl].[Xe] JGRGMDZIEXDEQT-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000008034 disappearance Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910000833 kovar Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/027—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed by irradiation, e.g. by photons, alpha or beta particles
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3452—Solder masks
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/4007—Surface contacts, e.g. bumps
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、導体パターンに所望のパターンを形成する方
法及びろう接方法に係り、特にろう材等により接合され
る導体パターンに所望のパターンを形成する方法及びこ
のようなパターン形成法を用いたろう接方法に関する。Detailed Description of the Invention [Industrial Application Field] The present invention relates to a method of forming a desired pattern on a conductor pattern and a method of soldering, and particularly relates to a method of forming a desired pattern on a conductor pattern to be bonded with a brazing material or the like. The present invention relates to a method of forming a pattern and a method of soldering using such a pattern forming method.
電子機器に使用される半導体パッケージは年々大型化、
高密度化されて来ており、この様なパッケージではセラ
ミック基板上の導体パターンに信号伝達用のピン等を接
続する例が多く見られる。Semiconductor packages used in electronic devices are becoming larger year by year.
With the trend toward higher density, there are many examples of such packages in which pins for signal transmission are connected to conductor patterns on the ceramic substrate.
この様な場合、ピンに外力が加わると、その応力は導体
パターンとセラミック基板との境界部に集中しセラミッ
ク基板にクラックや破壊が生ずる。In such a case, when an external force is applied to the pin, the stress is concentrated at the boundary between the conductive pattern and the ceramic substrate, causing cracks and destruction of the ceramic substrate.
そのため第４図に示す様にセラミック基板１上の導体パ
ターン２周辺部にセラミック材をコーティング（以下刃
バーコード３と記す）し、ここに接合用ろう材４が付着
しない様にすることにより、応力集中が導体パターン２
とセラミック基板１との境界部でなくカバーコート３と
ろう材４の境界部に生ずる様にすることによりセラミッ
ク基板１の破壊を防止する方法が用いられている。この
様なカバーコートを実施する方法としては、ガラス粉末
をペースト状にし、メタルマスクやメツシュスクリーン
等を用いてパターン上にガラス粉末ペーストを印刷し、
その後、高温雰囲気でガラスを溶融する方法が用いられ
ている。Therefore, as shown in FIG. 4, by coating the periphery of the conductor pattern 2 on the ceramic substrate 1 with a ceramic material (hereinafter referred to as the blade barcode 3) to prevent the bonding brazing material 4 from adhering thereto, Stress concentration occurs in conductor pattern 2
A method is used to prevent destruction of the ceramic substrate 1 by causing the crack to occur not at the boundary between the cover coat 3 and the ceramic substrate 1 but at the boundary between the cover coat 3 and the brazing filler metal 4. The method for implementing such a cover coat is to make glass powder into a paste form, print the glass powder paste on a pattern using a metal mask or mesh screen, etc.
Thereafter, a method of melting the glass in a high temperature atmosphere is used.
なお、これに関連する技術として特開昭５９−１６５４
４５が挙げられる。In addition, as a technology related to this, Japanese Patent Application Laid-Open No. 59-1654
45 are mentioned.
上記従来技術は、製造工程数を増加させ、そのための設
備を必要とすると共に、印刷や位置合わせの誤差により
カバーコートがろう材の接合部分に付着したり、溶融時
にカバーコートが上記接合部分に流れ込んだりして、ろ
う材の接合不良を生ずるという問題があった。特に導体
パターンが微細になるとこの傾向は著しい。The above conventional technology increases the number of manufacturing steps and requires equipment, and errors in printing or alignment may cause the cover coat to adhere to the joint portion of the brazing filler metal, or the cover coat may adhere to the joint portion during melting. There was a problem in that the brazing filler metal flowed in and caused poor bonding of the brazing filler metal. This tendency is particularly noticeable when the conductor pattern becomes finer.
本発明の目的は、導体パターンの接合部分を汚染するこ
となく、安価に、高精度で、導体パターンにろう材が付
着し難い部分を形成するパターン形成方法及びこのよう
なパターン形成法を用いたろう接方法を提供することに
ある。It is an object of the present invention to provide a pattern forming method for forming a portion of a conductor pattern to which brazing material is difficult to adhere, inexpensively and with high precision, without contaminating the joint portion of the conductor pattern, and a soldering method using such a pattern forming method. The aim is to provide a method of contact.
上記目的は、（１）ろう材により接合される導体パター
ンに所望のパターンの電磁波を照射し、照射部の表面を
上記ろう材に対し接合し難い表面に変化させることを特
徴とするパターン形成方法、（２）接合されるろう材に
対し接合性の異なる二種以上の金属の層を有する導体パ
ターンに所望のパターンの電磁波を照射し、照射部の金
属層を上記ろう材に対し接合し難い金属層に変化させる
ことを特徴とするパターン形成方法、（３）接合される
ろう材に対し接合性の良い金属の少なくとも一層を表面
に、その下にこれと異なる接合性の金属の少なくとも一
層を有する導体パターンに所望のパターンの電磁波を照
射し、照射部の上記表面の金属層をこれと異なる接合性
を持つ金属層に変化させることを特徴とするパターン形
成方法、（４）接合されるろう材に対し接合性の異なる
二種以上の金属の層を有する導体パターンに所望のパタ
ーンの電磁波を照射し、照射部の金属層を上記ろう材に
対し接合し難い金属層に変化させ、非照射部に所望の部
品を上記ろう材によりろう接し。The above object is (1) a pattern forming method characterized by irradiating a desired pattern of electromagnetic waves to a conductor pattern to be joined by a brazing material, and changing the surface of the irradiated part to a surface that is difficult to be joined to the brazing material. , (2) irradiate a desired pattern of electromagnetic waves to a conductor pattern having layers of two or more metals with different bonding properties to the brazing material to be joined, and make it difficult to bond the metal layer in the irradiated part to the brazing material. A pattern forming method characterized by changing the pattern into a metal layer, (3) forming at least one layer of a metal with good bondability to the brazing material to be bonded on the surface, and below that at least one layer of a metal with a different bondability. A pattern forming method characterized by irradiating a desired pattern of electromagnetic waves onto a conductor pattern having a conductor pattern, and changing the metal layer on the surface of the irradiated part into a metal layer having a different bonding property from that of the metal layer, (4) a solder to be bonded. Electromagnetic waves of a desired pattern are irradiated onto a conductor pattern that has layers of two or more metals that have different bonding properties to the material, and the metal layer in the irradiated area is changed to a metal layer that is difficult to bond to the brazing material. The desired parts are soldered to the parts using the above brazing filler metal.
上記導体パターンと該導体パターンが形成されている基
板との境界部に外力により発生する応力の集中を排除し
たことを特徴とするろう接方法によって達成される。This is achieved by a soldering method characterized in that concentration of stress caused by external force at the boundary between the conductor pattern and the substrate on which the conductor pattern is formed is eliminated.
本発明に用いる電磁波としてはレーザー、特に短波長レ
ーザーが好ましい。短波長レーザーの光は物質のごく表
面で吸収され、瞬時に物質を変化させ得るからである。The electromagnetic wave used in the present invention is preferably a laser, particularly a short wavelength laser. This is because short-wavelength laser light is absorbed by the very surface of a material and can instantly change the material.
短波長レーザーとしては、Ｆ ＋ Ａｒ Ｆ ＋ Ｋｒ
Ｆ ＊ Ｋｒ ＣＱ＋ Ｘｅ ＣＱ ＋ Ｘｅ Ｆ等
を発振材料とするエキシマレーザ−を用いることができ
る。As short wavelength lasers, F + Ar F + Kr
An excimer laser using F*KrCQ+XeCQ+XeF or the like as an oscillation material can be used.
前記（１）項におけるろう材に対し接合し難い表面に変
化させるとはどのような変化でもよい。Any change may be used to change the surface to a surface that is difficult to bond to the brazing material in item (1) above.
例えば表面層の材質の蒸発による消失、表面層の材質と
その下層の材質との溶融による他の材質への変化、反応
による変化等どのような変化でもよく、また二種以上の
変化が同時に生じてもよい。For example, any change may be possible, such as disappearance of the surface layer material due to evaporation, change to another material due to melting of the surface layer material and the material below it, change due to reaction, or two or more types of changes may occur simultaneously. You can.
前記（２）〜（４）項における金属層の変化も、同様に
表面の金属層の蒸発による下層の金属層の露出、複数の
金属層の合金化、反応等どのような変化でもよく、二種
以上の変化が同時に生じてもよい。Similarly, the changes in the metal layer in items (2) to (4) above may be any changes such as exposing the underlying metal layer due to evaporation of the surface metal layer, alloying or reaction of multiple metal layers, etc. More than one species of change may occur simultaneously.
また接合性の良否は、例えばぬれ性によって測定できる
。Moreover, the quality of bondability can be measured, for example, by wettability.
例えば導体パターン周辺部に接合ろう材が接合し難いエ
リアを作ることにより導体パターンとセラミック基板と
の間での応力集中の発生が防止できる。また波長の短い
紫外線レーザーを用いると物質のごく表面で吸収され瞬
時に物質を溶融又は蒸発させることが可能である。この
ため導体パターン表面層にろう材に接合し易い金属層を
、そのすぐ下にろう材に接合し難い金属層をあらかじめ
形成しておくことにより、レーザー光により表面の金属
層を蒸発させ、レーザー照射エリアにはろう材に接合し
難い金属を露出させることができる。For example, by creating an area around the conductor pattern where it is difficult for the solder material to bond, stress concentration between the conductor pattern and the ceramic substrate can be prevented. Furthermore, when an ultraviolet laser with a short wavelength is used, it is absorbed at the very surface of a substance and can instantly melt or evaporate the substance. For this reason, by forming in advance a metal layer that is easy to bond to the brazing material on the surface layer of the conductor pattern, and a metal layer that is difficult to bond to the brazing material immediately below, the surface metal layer is evaporated by laser light. Metals that are difficult to bond to the brazing material can be exposed in the irradiation area.
エキシマレーザ−に代表される紫外線レーザーは物質の
ごく表面層で吸収が発生するため深さコントロールは容
易である。またレーザー光は約５μｍ平方の面積まで集
光でき微細なパターン形成が可能となるので電磁波とし
て用いるのに好ましい。Ultraviolet lasers, such as excimer lasers, absorb absorption in the very surface layer of substances, so depth control is easy. Further, laser light is preferable for use as electromagnetic waves because it can be focused up to an area of about 5 μm square and allows formation of fine patterns.
以下５本発明の一実施例を図面を用いて説明する。 An embodiment of the present invention will be described below with reference to the drawings.
第１図は本実施例に用いた基板の構成を示したもので、
セラミック基板１上にタングステンの導体パターン２が
形成され、さらにその上にメツキによりニッケル６、金
７の層が形成されている。Figure 1 shows the structure of the substrate used in this example.
A tungsten conductor pattern 2 is formed on a ceramic substrate 1, and layers of nickel 6 and gold 7 are further formed thereon by plating.
第２図は導体パターン２の周辺部に紫外線レーザー８を
照射している状態を示したもので、レーザー源（図示せ
ず）より発振したレーザーが反射板９を介して導体パタ
ーン２の所定のエリアに照射されている。紫外線レーザ
ー８は金７の表面で吸収され照射エリアの金７を蒸発さ
せ、さらに金の下のニッケル６の一部を蒸発させてニッ
ケル６を露出させる。この様にしてレーザーの照射エリ
アにはニッケル６が、非照射エリアには金が残される。FIG. 2 shows a situation in which the periphery of the conductor pattern 2 is irradiated with an ultraviolet laser 8. The laser oscillated from a laser source (not shown) passes through the reflector plate 9 to a predetermined area of the conductor pattern 2. area is illuminated. The ultraviolet laser 8 is absorbed by the surface of the gold 7 and evaporates the gold 7 in the irradiated area, and further evaporates a part of the nickel 6 under the gold to expose the nickel 6. In this way, nickel 6 is left in the laser irradiated area and gold is left in the non-irradiated area.
本実施例に用いたレーザーはキセノン塩素を発振源とす
るエキシマレーザ−でパワー密度は６Ｊ／■２である。The laser used in this example is an excimer laser using xenon chlorine as an oscillation source and has a power density of 6 J/2.
又ニッケル６の厚さは約５μｍ、金７は０．１〜０．３
μ階とした６本条件ではレーザー照射エリアの金は溶融
し、ニッケルとの合金を作るのではなく、完全に蒸発し
、下地のニッケルが単体として露出した。Also, the thickness of nickel 6 is about 5 μm, and the thickness of gold 7 is 0.1 to 0.3
Under the six μ-order conditions, the gold in the laser irradiation area did not melt and form an alloy with nickel, but instead completely evaporated, exposing the underlying nickel as a single element.
また蒸発した金の汚染を防止するためＮ２ガス等の、不
活性ガスをブローしておくとより安定した結果が得られ
た。Furthermore, more stable results were obtained by blowing with an inert gas such as N2 gas to prevent contamination of the evaporated gold.
第３図は本実施例により処理した基板の導体パターン２
上に金属ピン５をろう付けした状態を示したものである
。ろう材４ （Ｓｎ−３７Ｐｂ）は導体パターン２上の
金７のエリアにはぬれ拡がり接合されるが、レーザーが
照射されニッケル６が露出したエリアにはぬれ性が悪い
ため拡がらず、従って導体パターン２の周辺エリアには
ろう材の付着しないエリアを確保することができた。従
ってピン５に外力が加わった時に応力集中はろう材４の
フィレットと導体パターン２の界面で発生し、セラミッ
ク基板１のクランキングや破壊を防止することができた
。Figure 3 shows the conductor pattern 2 of the substrate processed according to this example.
This figure shows a state in which a metal pin 5 is brazed to the top. The brazing filler metal 4 (Sn-37Pb) spreads and spreads to the area of the gold 7 on the conductor pattern 2, but it does not spread to the area where the nickel 6 is exposed by laser irradiation due to its poor wettability. It was possible to secure an area around Pattern 2 where no brazing material would adhere. Therefore, when an external force is applied to the pin 5, stress concentration occurs at the interface between the fillet of the brazing filler metal 4 and the conductor pattern 2, making it possible to prevent cranking and destruction of the ceramic substrate 1.
本実施例ではニッケル上の金を完全に蒸発させるパワー
で行なったが１表面の金を溶融して金とニッケルとの合
金層を形成させてもよい。余生のニッケル濃度が７０ｗ
ｔ％を超える様な合金は、ろう材（Ｓｎ−３７Ｐｂ）と
の接合性が悪くなるので。In this embodiment, the power was used to completely evaporate the gold on the nickel, but the gold on one surface may be melted to form an alloy layer of gold and nickel. The remaining nickel concentration is 70W.
An alloy that exceeds t% has poor bonding properties with the brazing filler metal (Sn-37Pb).
この様な合金を形成すれば同様な効果が得られる。Similar effects can be obtained by forming such an alloy.
このような例としてニッケル厚み５μｍ、金厚み０．５
μｍとし、レーザーのパワー密度２〜４Ｊ／の２とした
外は前記と同様に行なったところ、照射部は合金層が形
成し、ろう材との接合性が悪くなった。For example, nickel thickness is 5 μm and gold thickness is 0.5 μm.
When the test was carried out in the same manner as described above except that the laser power density was set to 2 μm and the laser power density was 2 to 4 J/2, an alloy layer was formed in the irradiated area, and the bondability with the brazing material was poor.
本効果をより有効に発揮するレーザーの波長としては１
９０〜４００ｎｍの範囲であり、この様な波長を得るた
めのエキシマ−レーザーの発振材料としてはＦ、ＡｒＦ
、ＫｒＦ、ＫｒＣＱ、ＸｅＣＱ＋ＸｅＦ等が用いられる
。又本実施例に示す表面上の接合性のよい金属としては
金のほかに銅、銀、スズ、はんだ等が有る。又、下地の
接合性の悪い金属としてはニッケルの他にクロム、コバ
ール、Ｆｅ−４２Ｎｉ合金、鉄等が有り同様の効果が認
められる。The wavelength of the laser that exhibits this effect more effectively is 1
The wavelength range is from 90 to 400 nm, and excimer laser oscillation materials for obtaining such wavelengths include F, ArF.
, KrF, KrCQ, XeCQ+XeF, etc. are used. In addition to gold, metals with good surface bonding properties shown in this embodiment include copper, silver, tin, solder, and the like. In addition to nickel, chromium, Kovar, Fe-42Ni alloy, iron, and the like are metals with poor bonding properties as the base, and similar effects are observed.
本発明によれば、電磁波の照射という容易な作業により
任意の位置にろう材に接合し難いエリアを形成すること
ができる。さらに電磁波を用いた加工であるため複雑な
形状が高精度で高速に達成でき、従来のガラスペースト
を使用した印刷、焼成法と比較し大幅な工数の低減、精
度の向上が可能となった。さらにガラスペーストが他の
接合エリアに付着することによるトラブルも防止でき、
信頼性の向上が可能となった。According to the present invention, an area that is difficult to bond to the brazing material can be formed at any position by the simple operation of irradiation with electromagnetic waves. Furthermore, since the process uses electromagnetic waves, complex shapes can be created quickly and with high precision, making it possible to significantly reduce the number of man-hours and improve precision compared to conventional printing and firing methods that use glass paste. Furthermore, troubles caused by glass paste adhering to other bonding areas can be prevented.
It has become possible to improve reliability.
第１図及び第２図は、本発明の一実施例に用いる導体パ
ターンの部分断面図、第３図は本発明によりピンをろう
付けした状態を示す導体パターンの部分断面図、第４図
は従来の方法を説明するための導体パターンの部分断面
図である。
１・・・セラミック基板 ２・・・導体パターン３・・
・カバーコート ４・・・ろう材５・・・ピン
６・・・ニッケル７・・・金 ８・
・・紫外線レーザー９・・・反射板
代理人弁理士 中 村 純之助
２図1 and 2 are partial sectional views of a conductor pattern used in an embodiment of the present invention, FIG. 3 is a partial sectional view of a conductor pattern showing a state in which pins are brazed according to the present invention, and FIG. 4 is a partial sectional view of a conductor pattern used in an embodiment of the present invention. FIG. 3 is a partial cross-sectional view of a conductor pattern for explaining a conventional method. 1...Ceramic substrate 2...Conductor pattern 3...
・Cover coat 4... Brazing metal 5... Pin
6...Nickel 7...Gold 8.
...Ultraviolet laser 9...Reflector representative patent attorney Junnosuke Nakamura 2 diagrams
Claims (4)
ーンの電磁波を照射し、照射部の表面を上記ろう材に対
し接合し難い表面に変化させることを特徴とするパター
ン形成方法。1. A pattern forming method characterized by irradiating a desired pattern of electromagnetic waves to a conductor pattern to be bonded by a brazing material, and changing the surface of the irradiated portion to a surface that is difficult to bond to the brazing material.
金属の層を有する導体パターンに所望のパターンの電磁
波を照射し、照射部の金属層を上記ろう材に対し接合し
難い金属層に変化させることを特徴とするパターン形成
方法。2. A desired pattern of electromagnetic waves is irradiated onto a conductor pattern that has layers of two or more metals that have different bondability to the brazing material to be bonded, and the metal layer in the irradiated area is changed to a metal layer that is difficult to bond to the brazing material. A pattern forming method characterized by:
とも一層を表面に、その下にこれと異なる接合性の金属
の少なくとも一層を有する導体パターンに所望のパター
ンの電磁波を照射し、照射部の上記表面の金属層をこれ
と異なる接合性を持つ金属層に変化させることを特徴と
するパターン形成方法。3. A desired pattern of electromagnetic waves is irradiated onto a conductor pattern having at least one layer of a metal with good bondability to the brazing material to be bonded on the surface and at least one layer of a metal with a different bondability below it, and A pattern forming method characterized by changing a surface metal layer to a metal layer having a different bonding property.
金属の層を有する導体パターンに所望のパターンの電磁
波を照射し、照射部の金属層を上記ろう材に対し接合し
難い金属層に変化させ、非照射部に所望の部品を上記ろ
う材によりろう接し、上記導体パターンと該導体パター
ンが形成されている基板との境界部に外力により発生す
る応力の集中を排除したことを特徴とするろう接方法。4. A desired pattern of electromagnetic waves is irradiated onto a conductor pattern that has layers of two or more metals that have different bondability to the brazing material to be bonded, and the metal layer in the irradiated area is changed to a metal layer that is difficult to bond to the brazing material. A desired component is soldered to the non-irradiated portion using the brazing material, thereby eliminating concentration of stress caused by external force at the boundary between the conductor pattern and the substrate on which the conductor pattern is formed. Brazing method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63288842A JP2628725B2 (en) | 1988-11-17 | 1988-11-17 | Pattern forming method and brazing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63288842A JP2628725B2 (en) | 1988-11-17 | 1988-11-17 | Pattern forming method and brazing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH02135767A true JPH02135767A (en) | 1990-05-24 |
| JP2628725B2 JP2628725B2 (en) | 1997-07-09 |
Family
ID=17735452
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63288842A Expired - Fee Related JP2628725B2 (en) | 1988-11-17 | 1988-11-17 | Pattern forming method and brazing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2628725B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005019334A (en) * | 2003-06-27 | 2005-01-20 | Matsushita Electric Works Ltd | Manufacturing method of soldering terminal |
| WO2005043966A1 (en) * | 2003-11-03 | 2005-05-12 | Eupec | Solder stop barrier |
| JP2006086453A (en) * | 2004-09-17 | 2006-03-30 | Yamato Denki Kogyo Kk | Method for surface treatment, and manufacturing method of electronic component |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60225453A (en) * | 1984-04-23 | 1985-11-09 | Dainippon Ink & Chem Inc | Formation of resist pattern |
| JPS61107751A (en) * | 1984-10-30 | 1986-05-26 | Nec Kansai Ltd | Resin mold type semiconductor device |
| JPS62219650A (en) * | 1986-03-20 | 1987-09-26 | Fujitsu Ltd | Tape disposing device |
| JPS63274153A (en) * | 1987-05-06 | 1988-11-11 | Seiko Epson Corp | Substrate for mounting semiconductor device |
-
1988
- 1988-11-17 JP JP63288842A patent/JP2628725B2/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60225453A (en) * | 1984-04-23 | 1985-11-09 | Dainippon Ink & Chem Inc | Formation of resist pattern |
| JPS61107751A (en) * | 1984-10-30 | 1986-05-26 | Nec Kansai Ltd | Resin mold type semiconductor device |
| JPS62219650A (en) * | 1986-03-20 | 1987-09-26 | Fujitsu Ltd | Tape disposing device |
| JPS63274153A (en) * | 1987-05-06 | 1988-11-11 | Seiko Epson Corp | Substrate for mounting semiconductor device |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005019334A (en) * | 2003-06-27 | 2005-01-20 | Matsushita Electric Works Ltd | Manufacturing method of soldering terminal |
| WO2005043966A1 (en) * | 2003-11-03 | 2005-05-12 | Eupec | Solder stop barrier |
| JP2006086453A (en) * | 2004-09-17 | 2006-03-30 | Yamato Denki Kogyo Kk | Method for surface treatment, and manufacturing method of electronic component |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2628725B2 (en) | 1997-07-09 |
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