JPH02111871A - Production of tantalum oxide-silicon oxide mixed film - Google Patents
Production of tantalum oxide-silicon oxide mixed filmInfo
- Publication number
- JPH02111871A JPH02111871A JP26211388A JP26211388A JPH02111871A JP H02111871 A JPH02111871 A JP H02111871A JP 26211388 A JP26211388 A JP 26211388A JP 26211388 A JP26211388 A JP 26211388A JP H02111871 A JPH02111871 A JP H02111871A
- Authority
- JP
- Japan
- Prior art keywords
- film
- mixed film
- oxide
- silicon oxide
- sio2
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- MTFAKTCIUXBAOR-UHFFFAOYSA-N [Si+2]=O.[O-2].[Ta+5] Chemical compound [Si+2]=O.[O-2].[Ta+5] MTFAKTCIUXBAOR-UHFFFAOYSA-N 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 43
- 238000000137 annealing Methods 0.000 claims abstract description 15
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 39
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 16
- 229910001936 tantalum oxide Inorganic materials 0.000 claims description 12
- 239000000758 substrate Substances 0.000 abstract description 18
- 238000004544 sputter deposition Methods 0.000 abstract description 11
- 230000003287 optical effect Effects 0.000 abstract description 9
- 230000015572 biosynthetic process Effects 0.000 abstract description 7
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 description 8
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Landscapes
- Optical Integrated Circuits (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Glass Compositions (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
（発明の産業上利用分野）
本発明は酸化タンタルと酸化シリコン混合膜の製造方法
、さらに詳細には光部品や光集積回路等の光応用分野に
適用する低損失な酸化物膜、特に光導波膜の製造方法に
関するものである。[Detailed Description of the Invention] (Industrial Application Field of the Invention) The present invention relates to a method for producing a tantalum oxide and silicon oxide mixed film, and more specifically to a low-loss film that is applied to optical applications such as optical components and optical integrated circuits. The present invention relates to a method of manufacturing an oxide film, particularly an optical waveguide film.
（発明の従来技術及び問題点）
光部品や光集積回路では、酸化物膜は基本的な構成要素
として用いられ、部品や回路自体の損失、効率などの特
性から、光学的に低損失な酸化物膜が要求される。(Prior art and problems with the invention) Oxide films are used as basic components in optical components and optical integrated circuits. A material film is required.
このような低損失な酸化物膜の一種である酸化タンタル
（Ｔａ２Ｏ５）と酸化シリコン（ＳｉＯ＋）との混合膜
の製法として、従来は、スパッタリング中に基板加熱を
行ないながら酸化タンタル（Ｔａ２ＯＳ）と酸化シリコ
ン（ＳｉＯ２）との混合膜を成膜する方法が用いられて
おり、成膜中の基板加熱により低損失化が図られてきた
。しかしながら、導波路として０．５ｄＢ／ｃｍ以下の
伝播損失が得られる基板加熱温度範囲は、２７０〜３２
Ｏ℃と非常に狭く制御性及び実用性の点から問題があっ
た。Conventionally, as a method for manufacturing a mixed film of tantalum oxide (Ta2O5) and silicon oxide (SiO+), which is a type of low-loss oxide film, tantalum oxide (Ta2OS) and silicon oxide were heated during sputtering. A method of forming a mixed film with silicon (SiO2) has been used, and the loss has been reduced by heating the substrate during film formation. However, the substrate heating temperature range in which a propagation loss of 0.5 dB/cm or less can be obtained as a waveguide is 270 to 32
The temperature was very narrow at 0°C, which caused problems in terms of controllability and practicality.
また、２種の酸化物の混合膜の製造方法として、スパッ
タリング法による成膜とこれに続くアニールの工程で低
損失な混合膜を製造する方法がある。Further, as a method of manufacturing a mixed film of two types of oxides, there is a method of manufacturing a mixed film with low loss by a process of film formation by sputtering and subsequent annealing.
このような方法として、従来、金属チタン（Ｔｉ）と酸
化シリコン（ＳｉＯ２ ）との２種のターゲットを同時
スパッタリングして酸化チタン（ＴｉＯ２）と酸化シリ
コン（ＳｉＯ２）との混合膜を成膜し、引き続くアニー
ルにより低損失化を図る方法がある。Conventionally, as such a method, a mixed film of titanium oxide (TiO2) and silicon oxide (SiO2) is formed by simultaneously sputtering two types of targets, metal titanium (Ti) and silicon oxide (SiO2). There is a method of reducing loss through subsequent annealing.
しかし、この方法では、低損失化に８００℃もの高いア
ニール温度を要し、かつ、導波路での伝播損失も０．７
ｄＢ／ｃｍ以上と大きく実用性の点から問題があった。However, this method requires an annealing temperature as high as 800°C to reduce the loss, and the propagation loss in the waveguide is also 0.7°C.
It was large, exceeding dB/cm, and there was a problem from the point of view of practicality.
本発明は上述の点に鑑みなされたものであり、前記のご
とき、酸化タンタル（Ｔａ２Ｏｓ＞と酸化シリコン（Ｓ
ｉ０２）との混合膜において、スパッタリング成膜中で
の基板加熱により低損失化を図る方法での低損失化のた
めの基板加熱温度範囲の制御性と実用性の問題を解決す
ると共に、酸化チタン（ＴｉＯ２）と酸化シリコン（Ｓ
ｉＯ２）との混合膜を成膜後、アニールにより低損失化
を図る方法での高いアニール温度と伝播損失の問題点を
解決し、０、５ｄＢ／ｃｍ以下の低損失な酸化物膜を、
制御の容易な広い形成温度範囲で製造する方法を提供す
ることにある。The present invention has been made in view of the above points, and uses tantalum oxide (Ta2Os) and silicon oxide (S
In a mixed film with titanium oxide (titanium oxide (TiO2) and silicon oxide (S
We solved the problems of high annealing temperature and propagation loss in the method of forming a mixed film with iO2) and then annealing it to reduce loss.
It is an object of the present invention to provide a manufacturing method that can be easily controlled over a wide forming temperature range.
（問題点を解決するための手段）
上述した問題点を解決するため、本発明は、酸化物膜の
製造方法として、スパッタリング法により酸化タンタル
（Ｔａ２Ｏ５ ）と酸化シリコン（ＳｉＯ２）どの混合
膜を成膜する工程の後に、引き続いて、上記混合膜を３
００℃〜７００℃までの範囲の任意の温度で熱的にアニ
ールする工程を行なうことにより、低損失な酸化物膜を
得ることを特徴としている。(Means for Solving the Problems) In order to solve the above-mentioned problems, the present invention uses a sputtering method to form a mixed film of tantalum oxide (Ta2O5) and silicon oxide (SiO2) as an oxide film manufacturing method. After the film forming step, the above mixed film is successively applied to 3 layers.
It is characterized by obtaining a low-loss oxide film by performing a thermal annealing process at an arbitrary temperature in the range of 00°C to 700°C.
従来の、スパッタリング中に基板加熱を行ないながら酸
化タンタル（Ｔａ２Ｏ５）と酸化シリコン（ＳｉＯ２）
との混合膜を成膜する方法で成膜中の基板加熱により低
損失化を図るのに代わり、酸化タンタル（Ｔａ２Ｏｓ
）と酸化シリコン（ＳｉＯ２）との混合膜を成膜する工
程と上記混合膜を３００℃〜７００℃の範囲の温度で熱
処理する工程とに分離し、成膜に引き続き熱処理を行な
うことにより、低損失な酸化物膜を広い形成温度範囲（
３００〜７００’Ｃ）で製造する方法を与えるものであ
る。Traditionally, tantalum oxide (Ta2O5) and silicon oxide (SiO2) are grown while heating the substrate during sputtering.
Instead of forming a mixed film with tantalum oxide (Ta2Os) to reduce loss by heating the substrate during film formation,
) and silicon oxide (SiO2) and a step of heat-treating the mixed film at a temperature in the range of 300°C to 700°C. A lossy oxide film can be formed over a wide temperature range (
300-700'C).
本発明においては、酸化タンタルおよび酸化シリコンと
の混合膜を成膜し、熱処理するものであるが、この熱処
理の温度は、前述のように３００〜７００℃である。３
００℃未満であると、アニールの効果が生じない恐れが
あり、一方７００℃を越えると、光導波路を製造する場
合には膜の下の素子等に影響を及ぼす恐れを生じると共
に、アニールのための熱処理装置のエネルギを無駄に消
費することになる。In the present invention, a mixed film of tantalum oxide and silicon oxide is formed and heat treated, and the temperature of this heat treatment is 300 to 700°C as described above. 3
If the temperature is less than 00°C, there is a risk that the annealing effect will not occur, while if it exceeds 700°C, there is a risk of affecting the elements under the film when manufacturing optical waveguides, and the annealing may not be effective. The energy of the heat treatment equipment will be wasted.
このアニール時間は、本発明においては６０分以下、一
般には３０分以下で十分であり、酸化チタンおよび酸化
シリコン混合膜の場合、３時間以上を要するのに比較し
て著しい効果の改善がある。In the present invention, this annealing time is sufficient to be 60 minutes or less, generally 30 minutes or less, and the effect is significantly improved compared to the case of a titanium oxide and silicon oxide mixed film, which requires 3 hours or more.
（実施例） 次に、本発明の具体例につき、図面を用いて説明する。(Example) Next, specific examples of the present invention will be explained using the drawings.
第１図及び第２図は本発明の詳細な説明する図であって
、第１図は酸化タンタル（Ｔａ２Ｏｓ ）と酸化シリコ
ン（ＳｉＯ２）との混合膜の成膜に用いたスパッタリン
グ装置の構造を示す上面図、第２図は、実験より得たア
ニール温度と導波路での混合膜の伝播損失との関係を示
す図である。1 and 2 are diagrams explaining the present invention in detail, and FIG. 1 shows the structure of a sputtering apparatus used to form a mixed film of tantalum oxide (Ta2Os) and silicon oxide (SiO2). The top view shown in FIG. 2 is a diagram showing the relationship between the annealing temperature and the propagation loss of the mixed film in the waveguide, which was obtained from an experiment.
本実施例では、ｌは真空室、２は基板ホルダ、３は基板
、４及び５はターゲット、６はターゲット４に電力を加
えるための高周波電源、７はターゲット５に電力を加え
るための高周波電源である。In this embodiment, l is a vacuum chamber, 2 is a substrate holder, 3 is a substrate, 4 and 5 are targets, 6 is a high frequency power source for applying power to target 4, and 7 is a high frequency power source for applying power to target 5. It is.
第１図より明らかなように、このスパッタリング装置は
、真空室ｌ内に、回転可能な基板ホルダ２を備えており
、この基板ホルダ２の側面に基板３を取付けるようにな
っている。この基板ホルダ２の近傍には、２種のターゲ
ット４及び５が設置できるようになっていると共に、前
記ターゲット４及び５に、それぞれ電力を加えるための
高周波電源６及び７が接続されている。As is clear from FIG. 1, this sputtering apparatus is equipped with a rotatable substrate holder 2 in a vacuum chamber 1, and a substrate 3 is attached to the side surface of this substrate holder 2. Two types of targets 4 and 5 can be installed near the substrate holder 2, and high frequency power sources 6 and 7 are connected to the targets 4 and 5, respectively, for applying electric power.
酸化タンタル（Ｔａ２Ｏ５）と酸化シリコン（ＳｉＯ２
）との混合膜の成膜は、真空室ｌ内に設けられた基板ホ
ルダ２上に基板３を装着し、基板ホルダ２を十分高速に
矢印の方向に回転しながら、アルゴンのみ、又はアルゴ
ンと酸素等の他のガスとの混合カスを導入して、スパッ
タリングすることで行なう。この際、ターゲット４又は
５の一方のみに、酸化タンタル（Ｔａ２Ｏ５ ）と酸化
シリコン（ＳｉＯ２）とを所定の比率で混合した単一タ
ーゲットを装着して成膜してもよいし、ターゲット４又
は５の一方に酸化タンタル（Ｔａ２Ｏ５）か金属タンタ
ル（Ｔａ）を装着し、他方に酸化シリコン（ＳｉＯ２）
を装着して高周波電源６及び７でターゲット４及び５に
加える電力を制御することにより、両ターゲットの成分
を所定の割合で混合しながら成膜してもよい。Tantalum oxide (Ta2O5) and silicon oxide (SiO2
) The substrate 3 is mounted on the substrate holder 2 provided in the vacuum chamber 1, and while the substrate holder 2 is rotated at a sufficiently high speed in the direction of the arrow, argon alone or argon is added. This is done by introducing a mixture of scum with other gases such as oxygen and performing sputtering. At this time, a single target made of a mixture of tantalum oxide (Ta2O5) and silicon oxide (SiO2) at a predetermined ratio may be attached to only one of the targets 4 or 5, or the film may be formed by attaching a single target to only one of the targets 4 or 5. Tantalum oxide (Ta2O5) or metal tantalum (Ta) is attached to one side, and silicon oxide (SiO2) is attached to the other side.
By controlling the electric power applied to the targets 4 and 5 with the high-frequency power sources 6 and 7, the components of both targets may be mixed at a predetermined ratio while forming a film.
本実施例では上記方法により、低（ｎ＝１．５６）、中
（１，７５Ｌ高（１，９５）の３種の屈折率の酸化タン
タル（Ｔａ２Ｏ５）と酸化シリコン（ＳｉＯ２）との混
合膜を、熱酸化膜を形成したシリコン基板上に成膜し、
導波路を形成した。In this example, a mixed film of tantalum oxide (Ta2O5) and silicon oxide (SiO2) with three types of refractive index, low (n = 1.56), medium (1,75L) and high (1,95), was prepared using the above method. is deposited on a silicon substrate on which a thermal oxide film is formed,
A waveguide was formed.
さらに、引き続いて、混合膜を成膜した基板を、通常の
電気炉を用いて３００℃〜７００℃の温度範囲で３０分
アニールし、Ｈｅ−Ｎｅ光（波長０．６３３μｍ）で伝
播損失を測定した。この結果が、第２図である。Furthermore, the substrate on which the mixed film was formed was annealed for 30 minutes in a temperature range of 300°C to 700°C using an ordinary electric furnace, and the propagation loss was measured using He-Ne light (wavelength 0.633 μm). did. The result is shown in FIG.
図中、○は酸化タンタルと酸化シリコンの混合膜であっ
て、屈折率ｎ＝１．５６の混合膜、◇は同様の混合膜で
あって、屈折率ｎ＝１．７５の混合膜、口は同様の混合
膜であって、屈折率ｎ＝１．９５の混合膜の結果である
。さらに図には、参考のために、酸化タンタル（Ｔａ２
Ｏ５）のみの場合（で示す）と酸化シリコン（５ｉＯ２
）のみの場合（Δで示す）の結果も示しである。In the figure, ○ is a mixed film of tantalum oxide and silicon oxide with a refractive index n=1.56, ◇ is a similar mixed film with a refractive index n=1.75, and ◇ is a mixed film with a refractive index n=1.75. is a result of a similar mixed film with a refractive index n=1.95. Furthermore, the figure shows tantalum oxide (Ta2) for reference.
O5) only (denoted by ) and silicon oxide (5iO2
) only (indicated by Δ) results are also shown.
第２図より、３種の屈折率の酸化タンタル（Ｔａ２Ｏ５
）と酸化シリコン（ＳｉＯ２）との混合膜のいずれに
おいても、３００℃のアニールで約０．５ｄＢ／ｃｍに
低下し、７００℃までのさらに高い温度では０．２〜０
．３ｄＢ／ｃｍの低い伝播損失が実現されていることが
わかる。From Figure 2, we can see that tantalum oxide (Ta2O5) has three types of refractive index.
) and silicon oxide (SiO2), it decreases to approximately 0.5 dB/cm after annealing at 300°C, and decreases to 0.2 to 0 at higher temperatures up to 700°C.
．． It can be seen that a low propagation loss of 3 dB/cm is achieved.
また酸化チタンおよび酸化シリコンの混合膜を成膜し、
８００℃、３時間の条件で熱処理をしたところ、最良の
ものでも０．７ｄＢ／ｃｍの伝播損失があった。即ち、
従来の方法においては０．７ｄＢ／ｃｍ以下の伝播損失
のものを製造できなかった。In addition, a mixed film of titanium oxide and silicon oxide was formed,
When heat treated at 800° C. for 3 hours, even the best one had a propagation loss of 0.7 dB/cm. That is,
With conventional methods, it has not been possible to manufacture a device with a propagation loss of 0.7 dB/cm or less.
（発明の効果）
以上説明したように、酸化タンタルと酸化シリコンとの
混合膜を成膜する工程と上記混合膜を３００℃〜７００
℃の範囲の温度で熱処理する工程とに分離し、成膜に引
き続き熱処理を行なうことにより、低損失な酸化物膜を
、低温の３００℃〜高温の７００℃までの広い形成温度
範囲で製造することができるため、次のような効果があ
る。(Effects of the Invention) As explained above, the process of forming a mixed film of tantalum oxide and silicon oxide and the process of forming the mixed film at 300°C to 700°C
By separating the process into a heat treatment process at a temperature in the temperature range of °C and performing heat treatment subsequent to film formation, a low-loss oxide film can be manufactured in a wide formation temperature range from a low temperature of 300 °C to a high temperature of 700 °C. This has the following effects:
まず、酸化タンタルと酸化シリコン（５ｉＯ２）との混
合比に応じて成膜した１、４６〜約２．１までの広範囲
の任意の屈折率の混合膜において、０、５ｄＢ／ｃｍ以
下の低損失な酸化物膜が得られるため、光部品を主とす
る広い分野の部品に適用でき、部品の性能を向上できる
。また、多層膜フィルタ等のように異なる屈折率の膜を
積層して用いる場合、全ての膜を積層した後−括して同
一温度でアニールすることで工程を簡略にできたり、あ
るいは、積層する毎に形成温度を下げながら形成しクラ
ック等の問題に対処することもでき、製造工程に融通性
を持たすことができる。First, in a mixed film with an arbitrary refractive index in a wide range from 1.46 to about 2.1, which was formed according to the mixing ratio of tantalum oxide and silicon oxide (5iO2), the loss was less than 0.5 dB/cm. Since a strong oxide film can be obtained, it can be applied to components in a wide range of fields, mainly optical components, and the performance of the components can be improved. In addition, when using films with different refractive indexes in layers, such as in a multilayer filter, the process can be simplified by annealing them at the same temperature after all the films are laminated. It is also possible to deal with problems such as cracks by lowering the forming temperature each time the film is formed, thereby providing flexibility in the manufacturing process.
また、低温の３００℃〜高温の７００℃までの広い形成
温度範囲で低損失な酸化物膜が得られるため、部品での
他の要因のばらつきに対してもマージンが大きく制御性
が非常に良い。In addition, since a low-loss oxide film can be obtained over a wide formation temperature range from a low temperature of 300°C to a high temperature of 700°C, there is a large margin for variations in other factors in parts, and controllability is very good. .
第１図は酸化タンタル（Ｔａ２Ｏ５）と酸化シリコン（
ＳｉＯ２）との混合膜の成膜に用いたスパッタリング装
置の構造を示す上面図、第２図は実験より得たアニール
温度と導波路での混合膜の伝播損失との関係を示す図で
ある。
１・・・真空室、２・・・基板ホルダ、３・・・基板、
４及び５・・・ターゲット、６・・・ターゲット４に電
力を加えるための高周波電源、７・・・ターゲット５に
電力を加えるための高周波電源。Figure 1 shows tantalum oxide (Ta2O5) and silicon oxide (
FIG. 2 is a top view showing the structure of the sputtering apparatus used to form the mixed film with SiO2), and FIG. 2 is a diagram showing the relationship between the annealing temperature and the propagation loss of the mixed film in the waveguide obtained from experiments. 1... Vacuum chamber, 2... Substrate holder, 3... Substrate,
4 and 5...Targets, 6...High frequency power source for applying power to target 4, 7... High frequency power source for applying power to target 5.
Claims (1)
Ｏ＿５）と酸化シリコン（ＳｉＯ＿２）との混合膜を成
膜する工程と、引き続いて、上記混合膜を３００℃から
７００℃の範囲の任意の温度で熱的にアニールする工程
とからなることを特徴とする酸化タンタルと酸化シリコ
ンとの混合膜の製造方法。(1) Tantalum oxide (Ta_2
A process of forming a mixed film of O_5) and silicon oxide (SiO_2), and a step of thermally annealing the mixed film at an arbitrary temperature in the range of 300°C to 700°C. A method for manufacturing a mixed film of tantalum oxide and silicon oxide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26211388A JPH02111871A (en) | 1988-10-18 | 1988-10-18 | Production of tantalum oxide-silicon oxide mixed film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26211388A JPH02111871A (en) | 1988-10-18 | 1988-10-18 | Production of tantalum oxide-silicon oxide mixed film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02111871A true JPH02111871A (en) | 1990-04-24 |
Family
ID=17371222
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26211388A Pending JPH02111871A (en) | 1988-10-18 | 1988-10-18 | Production of tantalum oxide-silicon oxide mixed film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02111871A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04247864A (en) * | 1991-01-25 | 1992-09-03 | Toshiba Glass Co Ltd | Silicon dioxide thin film |
| US8760978B2 (en) | 2011-12-05 | 2014-06-24 | HGST Netherlands B.V. | Magnetic recording head and system having optical waveguide core and/or cladding of an alloyed oxide material |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57130303A (en) * | 1981-02-03 | 1982-08-12 | Sharp Kk | Method of producing transparent conductive film |
| JPS6273202A (en) * | 1985-09-27 | 1987-04-03 | Hamamatsu Photonics Kk | Production of thin optical film |
-
1988
- 1988-10-18 JP JP26211388A patent/JPH02111871A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57130303A (en) * | 1981-02-03 | 1982-08-12 | Sharp Kk | Method of producing transparent conductive film |
| JPS6273202A (en) * | 1985-09-27 | 1987-04-03 | Hamamatsu Photonics Kk | Production of thin optical film |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04247864A (en) * | 1991-01-25 | 1992-09-03 | Toshiba Glass Co Ltd | Silicon dioxide thin film |
| US8760978B2 (en) | 2011-12-05 | 2014-06-24 | HGST Netherlands B.V. | Magnetic recording head and system having optical waveguide core and/or cladding of an alloyed oxide material |
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