JPH0135438B2 - - Google Patents
Info
- Publication number
- JPH0135438B2 JPH0135438B2 JP60008736A JP873685A JPH0135438B2 JP H0135438 B2 JPH0135438 B2 JP H0135438B2 JP 60008736 A JP60008736 A JP 60008736A JP 873685 A JP873685 A JP 873685A JP H0135438 B2 JPH0135438 B2 JP H0135438B2
- Authority
- JP
- Japan
- Prior art keywords
- output
- circuit
- data
- signal
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 18
- 230000004044 response Effects 0.000 claims description 6
- 238000010586 diagram Methods 0.000 description 9
- 239000003990 capacitor Substances 0.000 description 8
- 230000003111 delayed effect Effects 0.000 description 4
- 230000010354 integration Effects 0.000 description 2
- 230000007257 malfunction Effects 0.000 description 2
- 230000003321 amplification Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60008736A JPS60167192A (ja) | 1985-01-21 | 1985-01-21 | 半導体メモリ |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60008736A JPS60167192A (ja) | 1985-01-21 | 1985-01-21 | 半導体メモリ |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8242180A Division JPS578988A (en) | 1980-06-18 | 1980-06-18 | Semiconductor memory |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS60167192A JPS60167192A (ja) | 1985-08-30 |
JPH0135438B2 true JPH0135438B2 (de) | 1989-07-25 |
Family
ID=11701235
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP60008736A Granted JPS60167192A (ja) | 1985-01-21 | 1985-01-21 | 半導体メモリ |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60167192A (de) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62222486A (ja) * | 1986-02-14 | 1987-09-30 | Fujitsu Ltd | メモリ・周辺回路接続方式 |
JPS6381551A (ja) * | 1986-09-25 | 1988-04-12 | Sony Corp | メモリ装置 |
JP3059737B2 (ja) * | 1989-12-25 | 2000-07-04 | シャープ株式会社 | 半導体記憶装置 |
-
1985
- 1985-01-21 JP JP60008736A patent/JPS60167192A/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS60167192A (ja) | 1985-08-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4750155A (en) | 5-Transistor memory cell which can be reliably read and written | |
KR100382687B1 (ko) | 집적회로메모리용파워-온리셋회로 | |
US4389705A (en) | Semiconductor memory circuit with depletion data transfer transistor | |
US4953127A (en) | Semiconductor memory having different read and write word line voltage levels | |
US4962487A (en) | Static random access memory device with power down function | |
US5243573A (en) | Sense amplifier for nonvolatile semiconductor storage devices | |
EP0090632B1 (de) | Statische Randomspeicheranordnung | |
US6791897B2 (en) | Word line driving circuit | |
US5574687A (en) | Semiconductor memory | |
KR0161510B1 (ko) | 반도체 메모리 장치 | |
KR100332331B1 (ko) | 다이나믹 감지 증폭기 및 디지탈 데이타 출력 신호 발생 방법 | |
US5646902A (en) | Static random access memory device with low power dissipation | |
KR100286913B1 (ko) | 번인 테스트 기능을 갖는 반도체 메모리 장치 | |
US4539661A (en) | Static-type semiconductor memory device | |
US4858183A (en) | ECL high speed semiconductor memory and method of accessing stored information therein | |
US4933905A (en) | Semiconductor memory device for reducing power dissipation during a write operation | |
JPS6249676B2 (de) | ||
JPH01119982A (ja) | スタティック型ランダムアクセスメモリ | |
JPS6118836B2 (de) | ||
US4779230A (en) | CMOS static ram cell provided with an additional bipolar drive transistor | |
US6141266A (en) | Method and apparatus for generating a signal with a voltage insensitive or controlled delay | |
JPH0135438B2 (de) | ||
US4641049A (en) | Timing signal generator | |
US5901098A (en) | Ground noise isolation circuit for semiconductor memory device and method thereof | |
US5502679A (en) | Electrically erasable nonvolatile memory having discharging circuits |