JPH01296596A - Plasma x-ray generating device - Google Patents
Plasma x-ray generating deviceInfo
- Publication number
- JPH01296596A JPH01296596A JP63125720A JP12572088A JPH01296596A JP H01296596 A JPH01296596 A JP H01296596A JP 63125720 A JP63125720 A JP 63125720A JP 12572088 A JP12572088 A JP 12572088A JP H01296596 A JPH01296596 A JP H01296596A
- Authority
- JP
- Japan
- Prior art keywords
- conductor
- plasma
- creeping discharge
- insulator
- insulating body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004020 conductor Substances 0.000 claims abstract description 53
- 239000012212 insulator Substances 0.000 claims description 20
- 230000000694 effects Effects 0.000 abstract description 5
- 238000007906 compression Methods 0.000 abstract description 4
- 238000010438 heat treatment Methods 0.000 abstract description 3
- 239000006185 dispersion Substances 0.000 abstract 1
- 239000003990 capacitor Substances 0.000 description 6
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 229910052790 beryllium Inorganic materials 0.000 description 2
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 238000001015 X-ray lithography Methods 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
Landscapes
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- X-Ray Techniques (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、プラズマＸ線発生装置に係わり、特に超Ｌ
Ｓ Ｉ製造に用いられるＸ線リソグラフィーやＸ線顕微
鏡などに好適なＸ線発生装置に関する。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a plasma X-ray generator, and particularly to an ultra-L
The present invention relates to an X-ray generator suitable for X-ray lithography, X-ray microscopes, etc. used in SI manufacturing.
従来の装置は、特願昭６１−１１４４４８号に記載のよ
うに、第２図の如き構成となっていた。すなわち、真空
容器４の中に設けた内導体１と外感体２の間にコンデン
サ５からスイッチ６通じて大電流を供給し、絶縁体３の
表面に沿面放電を発生させこれを初期プラズマとし、こ
のプラズマを進展させ、放電空間８に２ピンチ効果によ
り高温高密度のプラズマを発生させ、この高温高密度プ
ラズマからＸ線を発生させた。ここで、４′は気体の導
入孔、４”は気体の排出孔、２′は前記外導体２に設け
たＸ線取り出し開孔、７はＸ線取り出しのためのベリリ
ウム膜を示す。A conventional device has a configuration as shown in FIG. 2, as described in Japanese Patent Application No. 114448/1982. That is, a large current is supplied from a capacitor 5 through a switch 6 between an inner conductor 1 and an outer sensing element 2 provided in a vacuum vessel 4, and a creeping discharge is generated on the surface of the insulator 3, which becomes an initial plasma. This plasma was developed to generate high-temperature, high-density plasma in the discharge space 8 due to the two-pinch effect, and X-rays were generated from this high-temperature, high-density plasma. Here, 4' is a gas introduction hole, 4'' is a gas discharge hole, 2' is an X-ray extraction hole provided in the outer conductor 2, and 7 is a beryllium membrane for X-ray extraction.
上記従来技術は、初期プラズマが絶縁体表面に均一に、
再現性良く生成するための配慮がされておらず、Ｘ線強
度の値がばらつくという問題があった。同時に、このよ
うなばらつきによって、Ｘ線強度の平均値も低く抑えら
れていた。In the above conventional technology, the initial plasma is uniformly spread over the insulator surface.
There was a problem in that the X-ray intensity values varied because no consideration was given to generation with good reproducibility. At the same time, due to such variations, the average value of the X-ray intensity was also kept low.
本発明の目的は、上記の問題点を解決し、強度が安定し
た高出力のプラズマＸ線発生装置を提供することにある
。An object of the present invention is to solve the above-mentioned problems and provide a high-output plasma X-ray generator with stable intensity.
本発明は前記絶縁体表面または前記絶縁体内に、前記内
外導体と直流的には絶縁され、交流的には結合さ才して
いる導体を、付着あるいは埋め込んだ構造を用いること
によって前記従来の問題点を解決したものである。The present invention solves the above-mentioned problems by using a structure in which a conductor is attached or embedded on the surface of the insulator or in the insulator, and is insulated from the inner and outer conductors in terms of direct current and coupled with them in terms of alternating current. This solves the problem.
絶縁体内に埋め込まれた導体を、１−リガ導体と呼ぶこ
とにする。第１図ａにトリガ導体１１の配置を示した。A conductor embedded within an insulator will be referred to as a 1-Riga conductor. FIG. 1a shows the arrangement of the trigger conductor 11.
同図すには１へリガ導体１コの周辺の拡大説明図も示し
である。Ｉ・リガ尋体］］は、交流的には、外導体２と
容量ＣＩで、内導体］と容量Ｃ２で結合されている。内
外瀦体］、２間にパルス電圧が印加されると、電圧は、
Ｃ１とＣ２の容量の逆比で分圧されるが、図からもわか
るように、絶縁体３の誘＠率が高く、内厚体］と十分接
近しているとすれば、Ｃ２とＣｓに比べて十分大きい。The figure also shows an enlarged explanatory view of the periphery of one helical conductor. In terms of alternating current, the I.Riga body is connected to the outer conductor 2 through a capacitor CI, and to the inner conductor through a capacitor C2. When a pulse voltage is applied between the inside and outside body], the voltage is
The voltage is divided by the inverse ratio of the capacitance of C1 and C2, but as can be seen from the figure, if insulator 3 has a high permittivity and is sufficiently close to the inner thick body, then C2 and Cs It's big enough in comparison.
従って、印加電圧は大部分外導体２と１−リガ導体１１
の間の沿面部分にかかり、この部分には、容易に放電破
壊を生起する。放電破壊が生起した後には、トリガ感体
は外導体２に心通しておす、しかも前記放電破壊によっ
て得られた荷電粒子が種と成るので、残りの絶縁体表面
には、均一に、再現性良く沿面放電を生起せしめること
ができる。〔実施例〕
本発明の実施例を第１図および第３図乃至第５図に示す
。Therefore, the applied voltage is mostly applied to the outer conductor 2 and 1-Riga conductor 11.
In this area, discharge damage easily occurs. After the discharge breakdown occurs, the trigger sensitive body is passed through the outer conductor 2, and since the charged particles obtained by the discharge breakdown serve as seeds, the remaining insulator surface is uniformly and reproducibly Creeping discharge can be generated well. [Example] An example of the present invention is shown in FIG. 1 and FIGS. 3 to 5.
第１図は、本発明の第１の実施例を示す。内外導体１及
び２と真空容器４は、Ｗ −Ｃｕ合金等からなる円筒状
導体電極である。内外導体１，２の間には、高誘電率で
、しかも誘電損失が少なく、高耐圧特性を有する、アル
ミナ等のファインセラミックス等からなる円筒状絶縁体
３が配置されている。絶縁体３には、リング状、または
、直流的には、内外導体１，２の双ＪＪから絶縁された
扇状のトリガ電極１］が同軸状に埋め込まれている。FIG. 1 shows a first embodiment of the invention. The inner and outer conductors 1 and 2 and the vacuum container 4 are cylindrical conductive electrodes made of W--Cu alloy or the like. A cylindrical insulator 3 made of fine ceramics such as alumina, which has a high dielectric constant, low dielectric loss, and high voltage characteristics, is arranged between the inner and outer conductors 1 and 2. In the insulator 3, a ring-shaped or, in terms of direct current, a fan-shaped trigger electrode 1 which is insulated from the twin JJ of the inner and outer conductors 1 and 2, is coaxially embedded.
ところで、１〜リガ８体は交流的Ｆこは、内外導体に容
量を介して結合されている。トリガ電極１］の材質は、
ＬａＢｅ等の、低仕事関数の金属を用いるとよい。４は
、ステンレス等からなる真空容器であり、容器中には、
Ｎｅ等の、プラズマ源となる気体がＯｉ〜１．０Ｔｏｒ
ｒ程度入れられている。Incidentally, the alternating current F of the 1 to 8 riggers are coupled to the inner and outer conductors via capacitance. The material of the trigger electrode 1 is
It is preferable to use a metal with a low work function, such as LaBe. 4 is a vacuum container made of stainless steel or the like, and inside the container,
The plasma source gas such as Ne is Oi ~ 1.0 Tor
Approximately r is included.
７は、Ｂｅ箔等からなる軟Ｘ線のと取り出し窓である。7 is a soft X-ray extraction window made of Be foil or the like.
５は、大容量で高速のコンテンサ電源（１〜１００μド
）であり、］〜５０ ｋ、 Ｖ程度に充電される。６は
、エアギャップスイッチなとの大電流スイッチである。5 is a large-capacity, high-speed capacitor power supply (1 to 100 μm), which is charged to approximately 50 kV. 6 is a large current switch such as an air gap switch.
スイッチ６が閉しられると、正極性のパルス電圧が内導
体１に加わる。このことによって、トリガ電極１１と、
外導体２の間の絶縁体表面で沿面放電が発生し、これが
予備電離の効果を発揮して、絶縁体３全体を包み込むよ
うな均一な沿面放電が発生し、内導体１と外導体２間に
大電流が流れる。When the switch 6 is closed, a positive pulse voltage is applied to the inner conductor 1. By this, the trigger electrode 11 and
A creeping discharge occurs on the surface of the insulator between the outer conductor 2, which exerts the effect of pre-ionization, and a uniform creeping discharge that wraps around the entire insulator 3 occurs, causing a discharge between the inner conductor 1 and the outer conductor 2. A large current flows through the
この大電流によって発生する磁気圧によってプラズマは
、均一性を保ったまま絶縁体３の表面から離れ、ディス
ク状のプラズマシートを形成し、さらに内導体１の先端
に達すると自己圧縮加熱され。Due to the magnetic pressure generated by this large current, the plasma separates from the surface of the insulator 3 while maintaining its uniformity, forming a disk-shaped plasma sheet, and when it reaches the tip of the inner conductor 1, it is heated by self-compression.
軟Ｘ線を発生する。自己圧縮加熱を正常に起こすには、
均一な沿面放電を発生させることが重要で、このために
、トリガ電極１１が有効に作用する。Generates soft X-rays. To properly cause self-compression heating,
It is important to generate a uniform creeping discharge, and the trigger electrode 11 works effectively for this purpose.
第３図に、第２の実施例を示す。FIG. 3 shows a second embodiment.
この実施例は、トリガ感体の形状を円筒系にし、内厚体
との対抗面積を広くして、容量的な結合を増加させたも
のである。その他の部分は、第１図の実施例と同じであ
る。In this embodiment, the shape of the trigger sensitive member is cylindrical, and the area facing the inner thick body is increased to increase capacitive coupling. The other parts are the same as the embodiment shown in FIG.
第４図に、第３の実施例を示す。ここでは、コンデンサ
ハングの極性が逆になっており、また、同軸状絶縁体３
は、外導体２に接触した配置になっている。沿面放電開
始の時点で、電子源は１〜リガ湛体１１であるので、ト
リガ導体１１は、外心体との間の容量的結合が強くなる
ように配置されている。他の部分は、第１の実施例と同
じである。FIG. 4 shows a third embodiment. Here, the polarity of the capacitor hang is reversed, and the coaxial insulator 3
is arranged in contact with the outer conductor 2. Since the electron source is the trigger conductor 1 to the trigger conductor 11 at the start of the creeping discharge, the trigger conductor 11 is arranged so that the capacitive coupling between the trigger conductor 11 and the eccentric body is strong. Other parts are the same as in the first embodiment.
第５図（ａ）に、第４の実施例を示す。この実施例では
、金属の薄い帯や、薄板等の導体片を適当な間隔で絶縁
体表面に付着させたものをＩ〜リガ導体１４としたもの
である。この時、絶縁体３の第１導体１の周囲での内径
と外径の差を十分小さくして、各導体片の内海体との容
量的結合が、十分取れるようにしである。同図（ｂ）に
は、同図（ａ）の破線部の拡大図を示した。拡大図で、
ＣＩ□＋ ｃ、２． Ｃｐｓ、 ・・・・・等は、各
導体片と内導体の聞の容量である。Ｃｓ １ｇ Ｃ，ｉ
Ｓ ２ ＋ Ｃｓ ｓ 、 等は、導体片間の容
量である。ただし、Ｃｓ１は、外導体に一番近い導体片
と、外心体との間の容量である。FIG. 5(a) shows a fourth embodiment. In this embodiment, the I~Riga conductor 14 is made by attaching conductor pieces such as thin metal strips or thin plates to the surface of the insulator at appropriate intervals. At this time, the difference between the inner diameter and outer diameter of the insulator 3 around the first conductor 1 is made sufficiently small to ensure sufficient capacitive coupling between each conductor piece and the inner sea body. FIG. 5(b) shows an enlarged view of the broken line portion in FIG. 1(a). In the enlarged view,
CI□+c, 2. Cps, etc. are the capacitance between each conductor piece and the inner conductor. Cs 1g C,i
S 2 + Cs s , etc. is the capacitance between the conductor pieces. However, Cs1 is the capacitance between the conductor piece closest to the outer conductor and the outer core.
ここでは、Ｃ工＋ ＞ Ｃｓ １． ＣＩ ２ ＞ Ｃ
Ｓ ２１ 等となっている。この構成で、内外導体
間にパルス電圧か加わると、外導体２に最も近い導体片
と外導体の間の絶縁体３表面で沿面放電が生ずるととも
に、外導体２とこの導体片］４が速やかに同電位となり
、隣接した導体片との間に沿面放電が起こることになる
。この過程が次々に伝搬して行き、均一な沿面放電が発
生する。Here, C + > Cs 1. CI2 > C
S 21 etc. With this configuration, when a pulse voltage is applied between the inner and outer conductors, creeping discharge occurs on the surface of the insulator 3 between the conductor piece closest to the outer conductor 2 and the outer conductor 2 and this conductor piece 4. They will have the same potential, and a creeping discharge will occur between the adjacent conductor pieces. This process propagates one after another, and a uniform creeping discharge occurs.
本発明によれば、均一な沿面放電を再現性良く発生でき
るのできるので、Ｘ線強度のばらつきの少ない（１，０
％以下に抑えられる）Ｘ線発生装置が得られる。According to the present invention, uniform creeping discharge can be generated with good reproducibility, so there is little variation in X-ray intensity (1,0
% or less) can be obtained.
第１図は本発明の第１の実施例のＸ線発生装置の縦断面
図およびトリガ湛体部の拡大断面図、第２図は従来のプ
ラズマ軟Ｘ線発生装置の縦断面図、第３乃至第５図は、
本発明の他の実施例のＸ線発生装置の縦断面図である。
■・内心体、２・・外導体、３ ・絶縁体、４・・放電
容器、５・コンデンサ、６ 放電スイッチ、７ベリリウ
ム窓、８・放電空間、１． ｉ、 、 １ ／１．−
１〜リガ導体片。FIG. 1 is a longitudinal sectional view and an enlarged sectional view of the trigger chamber part of an X-ray generator according to a first embodiment of the present invention, FIG. 2 is a longitudinal sectional view of a conventional plasma soft X-ray generator, and FIG. Figures 5 to 5 are
FIG. 3 is a longitudinal cross-sectional view of an X-ray generator according to another embodiment of the present invention. ■・Inner core body, 2・Outer conductor, 3・Insulator, 4・Discharge vessel, 5・Capacitor, 6 Discharge switch, 7 Beryllium window, 8・Discharge space, 1. i, , 1 /1. −
1 ~ Riga conductor piece.
Claims (1)
に接触して配置された絶縁体を持ち、前記電極間にパル
ス電圧を印加する手段を具えたプラズマＸ線発生装置に
おいて、前記絶縁体表面または前記絶縁体内に、前記内
外導体と直流的には絶縁され、交流的には結合されてい
る導体を、付着あるいは埋め込んだことを特徴とするプ
ラズマＸ線発生装置。1. In a plasma X-ray generator having at least two positive and negative electrodes, an insulator placed in contact with both of the electrodes, and means for applying a pulse voltage between the electrodes, the insulator surface Alternatively, a plasma X-ray generating device characterized in that a conductor is attached or embedded in the insulator, the conductor being insulated from the inner and outer conductors in terms of direct current and coupled in terms of alternating current.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63125720A JPH01296596A (en) | 1988-05-25 | 1988-05-25 | Plasma x-ray generating device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63125720A JPH01296596A (en) | 1988-05-25 | 1988-05-25 | Plasma x-ray generating device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01296596A true JPH01296596A (en) | 1989-11-29 |
Family
ID=14917093
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63125720A Pending JPH01296596A (en) | 1988-05-25 | 1988-05-25 | Plasma x-ray generating device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01296596A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2002007484A3 (en) * | 2000-07-04 | 2002-04-25 | Lambda Physik Ag | Method of producing short-wave radiation from a gas-discharge plasma and device for implementing it |
| JP2004504706A (en) * | 2000-07-04 | 2004-02-12 | ランブダ フィジク アクチェンゲゼルシャフト | Method for generating short wavelength radiation from gas discharge plasma and apparatus therefor |
| JP2006260948A (en) * | 2005-03-17 | 2006-09-28 | Kyoto Univ | Ionizer equipped with x-ray generator |
| JP2008084656A (en) * | 2006-09-27 | 2008-04-10 | Kyoto Univ | X-ray irradiation type ionizer |
| USRE41362E1 (en) | 2000-07-03 | 2010-06-01 | Asml Netherlands B.V. | Radiation source, lithographic apparatus, device manufacturing method, and device manufactured thereby |
-
1988
- 1988-05-25 JP JP63125720A patent/JPH01296596A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| USRE41362E1 (en) | 2000-07-03 | 2010-06-01 | Asml Netherlands B.V. | Radiation source, lithographic apparatus, device manufacturing method, and device manufactured thereby |
| WO2002007484A3 (en) * | 2000-07-04 | 2002-04-25 | Lambda Physik Ag | Method of producing short-wave radiation from a gas-discharge plasma and device for implementing it |
| JP2004504706A (en) * | 2000-07-04 | 2004-02-12 | ランブダ フィジク アクチェンゲゼルシャフト | Method for generating short wavelength radiation from gas discharge plasma and apparatus therefor |
| JP4880179B2 (en) * | 2000-07-04 | 2012-02-22 | エクストリーム テクノロジーズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | Method for generating short wavelength radiation from gas discharge plasma and apparatus therefor |
| JP2006260948A (en) * | 2005-03-17 | 2006-09-28 | Kyoto Univ | Ionizer equipped with x-ray generator |
| JP2008084656A (en) * | 2006-09-27 | 2008-04-10 | Kyoto Univ | X-ray irradiation type ionizer |
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