JPH01290764A - Sputtering target for transparent conductive film - Google Patents
Sputtering target for transparent conductive filmInfo
- Publication number
- JPH01290764A JPH01290764A JP63117138A JP11713888A JPH01290764A JP H01290764 A JPH01290764 A JP H01290764A JP 63117138 A JP63117138 A JP 63117138A JP 11713888 A JP11713888 A JP 11713888A JP H01290764 A JPH01290764 A JP H01290764A
- Authority
- JP
- Japan
- Prior art keywords
- target
- ito
- sputtering
- transparent conductive
- conductive film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005477 sputtering target Methods 0.000 title claims description 8
- 238000004544 sputter deposition Methods 0.000 claims abstract description 23
- 230000003628 erosive effect Effects 0.000 claims abstract description 6
- AZWHFTKIBIQKCA-UHFFFAOYSA-N [Sn+2]=O.[O-2].[In+3] Chemical compound [Sn+2]=O.[O-2].[In+3] AZWHFTKIBIQKCA-UHFFFAOYSA-N 0.000 claims description 3
- 239000010408 film Substances 0.000 abstract description 12
- 239000010409 thin film Substances 0.000 abstract description 2
- 239000000758 substrate Substances 0.000 abstract 2
- 239000004020 conductor Substances 0.000 abstract 1
- 239000000843 powder Substances 0.000 description 14
- 239000002994 raw material Substances 0.000 description 7
- 239000011230 binding agent Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 239000002270 dispersing agent Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 4
- 229910003437 indium oxide Inorganic materials 0.000 description 4
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000000465 moulding Methods 0.000 description 4
- 239000002002 slurry Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 3
- 229910001887 tin oxide Inorganic materials 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000839 emulsion Substances 0.000 description 2
- 238000001746 injection moulding Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical group [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 150000004770 chalcogenides Chemical class 0.000 description 1
- 238000000975 co-precipitation Methods 0.000 description 1
- 238000009694 cold isostatic pressing Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009760 electrical discharge machining Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000006210 lotion Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- WMHSAFDEIXKKMV-UHFFFAOYSA-N oxoantimony;oxotin Chemical compound [Sn]=O.[Sb]=O WMHSAFDEIXKKMV-UHFFFAOYSA-N 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明はＥＬデイスプレィ、液晶デイスプレィ面発熱体
、タッチパネルなどに用いられる透明導電膜をスパッタ
リング法で形成する際に使用されるスパッタリングター
ゲットに関するものである。Detailed Description of the Invention (Field of Industrial Application) The present invention relates to a sputtering target used when forming transparent conductive films by sputtering for use in EL displays, liquid crystal display surface heating elements, touch panels, etc. be.
（従来の技術）
近年、薄膜化技術の発達に伴い表示素子分野などでは透
明導電膜が利用されてきている。現在、透明導電膜の材
質として酸化インジウム−酸化スズ（以下、ＩＴＯとい
う）、酸化スズ−酸化アンチモン、酸化亜鉛などの酸化
物、Ａ−ｕ、Ｐｔ。(Prior Art) In recent years, with the development of thin film technology, transparent conductive films have been used in the field of display devices and the like. Currently, materials for transparent conductive films include oxides such as indium oxide-tin oxide (hereinafter referred to as ITO), tin oxide-antimony oxide, zinc oxide, Au, and Pt.
Ａｇなどの金属あるいはカルコゲナイド、ホウ素化ラン
タン、窒化チタンなどの非酸化物系材料などが知られて
いるが、なかでも安定性、高光透過性など理由からＩＴ
Ｏが多く用いられている。また、ＩＴＯからなる透明導
電膜の作製方法としては蒸着法、インジウム−スズメタ
ルターゲット”を用いた反応性スパッタ法、ＩＴＯター
ゲットを用いたスパッタリング法が知られており、特に
成膜コントロールの容易さからＩＴＯターゲットを用い
たスパッタリング法が主流となっている。Metals such as Ag and non-oxide materials such as chalcogenide, lanthanum boride, and titanium nitride are known, but among them, IT
O is often used. Also, known methods for producing transparent conductive films made of ITO include vapor deposition, reactive sputtering using an indium-tin metal target, and sputtering using an ITO target. Since then, sputtering methods using ITO targets have become mainstream.
しかしながらスパッタリング法は、マグネットによって
プラズマを制御しながらターゲットをスパッタするため
に、従来の平板形状を有するＩＴＯターゲットではマグ
ネットの形状に二口゛−ジョンされてしまい、ターゲッ
トの利用効率が２０〜４０％と低くなるという問題点が
ある。However, in the sputtering method, since the target is sputtered while controlling the plasma using a magnet, the conventional ITO target, which has a flat plate shape, is split into two parts in the shape of the magnet, resulting in a target utilization efficiency of 20 to 40%. There is a problem that it becomes low.
更に、使用済みＩＴＯターゲットを回収し、溶解、精製
により再生粉末を得、該粉末を再度ターゲット化するこ
とによりＩＴＯの利用効率を向上させることが行われて
いるが、再生粉末から得たターゲットは品質の点で劣る
という問題点がある。Furthermore, the utilization efficiency of ITO is improved by collecting used ITO targets, melting and refining them to obtain recycled powder, and retargeting the powder. However, targets obtained from recycled powder There is a problem that the quality is inferior.
（発明が解決しようとする問題点）
本発明の目的は、利用効率の優れたＩＴＯスパッタリン
グターゲットを提供することにある。(Problems to be Solved by the Invention) An object of the present invention is to provide an ITO sputtering target with excellent utilization efficiency.
（問題を解決するための手段）
本発明者らは上記問題点を解決するために鋭意検討を行
った結果、ＩＴＯスパッタリングターゲットの形状を変
えることによりターゲットの利用効率が向上することを
見出だし本発明を完成するに至った。すなわち本発明は
、酸化インジウム−酸化スズを含有する透明導電膜用ス
パッタリングターゲットにおいて、重量の８０％以上が
スパッタリング時のエロージョンエリア内に存在する形
状であることを特徴とする透明導電膜用スパッタリング
ターゲットである。(Means for Solving the Problem) As a result of intensive studies to solve the above problems, the inventors of the present invention found that changing the shape of the ITO sputtering target improves the utilization efficiency of the target. The invention was completed. That is, the present invention provides a sputtering target for a transparent conductive film containing indium oxide-tin oxide, characterized in that 80% or more of the weight of the sputtering target for a transparent conductive film exists within an erosion area during sputtering. It is.
尚、本発明において二ローションエリアとは平板ターゲ
ットを用いてスパッタリングを行なった時に、ターゲッ
トにおけるスパッタ隼が５％以上の部分と定義する。In the present invention, the second lotion area is defined as a portion of the target where the sputtering rate is 5% or more when sputtering is performed using a flat target.
本発明のＩＴＯターゲットは酸化インジウム（Ｉ ｎ
２０ ａ ）と酸化スズ（Ｓ ｎ Ｏ２）を含有するも
のであるが、通常酸化インジウムを７０重量％以上含有
するものである。また、該ターゲットから得られる透明
導電膜の導電性、透明度を向上させるために酸化インジ
ジウム、酸化スズの他に第三成分を含有していても何ら
差支えない。The ITO target of the present invention is indium oxide (In
20 a ) and tin oxide (S n O2), and usually contains 70% by weight or more of indium oxide. Further, in order to improve the conductivity and transparency of the transparent conductive film obtained from the target, a third component may be contained in addition to indium oxide and tin oxide without any problem.
また、その形状はターゲットｆｆ２二の８０％以上がス
パッタリング時のエロージョンエリア内に存在するもの
であれば特に限定はしない。例えば、第１図に示すよう
にターゲット断面が四角形、蒲鉾型である環状のもの、
第２図に示すようにスパッタリング時にエロージョンを
受ける度合いに応−じて肉厚が厚くなっている環状ある
いは平面状のものなどを例示す−ることかでき、このう
ち環状のものは利用効率の点で好ましい形状である。Moreover, the shape is not particularly limited as long as 80% or more of the target ff22 exists within the erosion area during sputtering. For example, as shown in Fig. 1, a ring-shaped target with a square or semi-cylindrical cross section;
As shown in Figure 2, examples include ring-shaped or flat-shaped materials whose wall thickness increases depending on the degree of erosion during sputtering. This is a preferable shape.
また、ターゲットはスパッタリングの際に、冷却を行う
ためハンダなどで冷却用金属板（バッキングプレート）
に接合され用いられるが、ターゲットとバッキングプレ
ートの接合性、ターゲットの冷却効率を向上させるため
、バッキングプレートとの接合面を平面とすることが好
ましい。In addition, the target is a cooling metal plate (backing plate) with solder etc. to cool it during sputtering.
However, in order to improve the bondability between the target and the backing plate and the cooling efficiency of the target, it is preferable that the surface to be bonded to the backing plate be flat.
ターゲットが上記の形状を有することにより、大部分の
ＩＴＯがスパッタリングに供され、ターゲットの利用効
率が向上する。When the target has the above shape, most of the ITO is subjected to sputtering, and the efficiency of target utilization is improved.
本発明のターゲットは、例えば原料粉末と溶媒。The targets of the present invention include, for example, raw material powder and a solvent.
分散剤及びバインダーを混合して得られるスラリーを、
所望形状の例えばセラコラ型などの吸水性のある多孔質
成形型に、常圧あるいは加圧下にて注入し、その後溶媒
を除去することにより成型する鋳込成型法により、ある
いは原料粉末と熱可塑性樹脂を混合し、該混合物を熱溶
解し、射出成型機にて所望形状の金型に射出して成型す
る射出成型法により成型体を得、該成型体を焼成するこ
とにより得ることができる。このとき、用いられる原料
粉末は所望のターゲット組成と同じ組成の粉末が採用さ
れ、これら粉末は粉末の混合、共沈法などにより得るこ
とができる。また、鋳込成型法により成型を行なう場合
、スラリー゛を得る際の溶媒としては通常水が用いられ
、分散剤としては例えばポリカルボン酸系のものなどを
、バインダーとしては例えばアクリルエマルジョン系の
ものなどを挙げることができるが、これらに限定されな
い。また、焼成は１３００〜１４５０℃で１時間以上行
うことが好ましい。更に焼成を行う前に成型体に冷間静
水圧プレスなどを施し、成型体の圧密化を行えば相対密
度の大きいＩＴＯターゲッ！・を得ることができるので
好ましい。The slurry obtained by mixing the dispersant and binder is
A cast molding method is used, in which the raw material powder and thermoplastic resin are injected into a water-absorbing porous mold such as a Ceracola mold under normal pressure or pressure, and then molded by removing the solvent. A molded body can be obtained by an injection molding method in which the mixture is heated and melted, and the mixture is injected and molded into a mold of a desired shape using an injection molding machine, and the molded body is fired. At this time, the raw material powder used has the same composition as the desired target composition, and these powders can be obtained by mixing powders, coprecipitation, etc. Furthermore, when molding is carried out by the cast molding method, water is usually used as the solvent to obtain the slurry, the dispersant is, for example, a polycarboxylic acid-based one, and the binder is, for example, an acrylic emulsion-based one. Examples include, but are not limited to, the following. Moreover, it is preferable to perform baking at 1300-1450 degreeC for 1 hour or more. Furthermore, before firing, the molded body can be subjected to cold isostatic pressing, etc. to consolidate the molded body, making it possible to create an ITO target with a high relative density. This is preferable because it can obtain .
以上の様に得られたＩＴＯターゲットは、冷却用金属板
にハンダなどで接合してスパッタリングに供され、また
環状のターゲットは、バッキングプレート上で材料の存
在しない部分を組成物焼結体、インジウム系のシートな
どで覆い用いること−により、不純物の混入を避けるこ
とができる。The ITO target obtained as described above is bonded to a cooling metal plate with solder or the like and subjected to sputtering, and the annular target is made of a composition sintered body, an indium Contamination with impurities can be avoided by covering the material with a plastic sheet or the like.
（実施例）
以下、実施例により本発明を更に詳しく説明するが、本
発明はこれらに限定されるものではない。(Examples) Hereinafter, the present invention will be explained in more detail with reference to Examples, but the present invention is not limited thereto.
実施例１
厚さ８關のアクリル板を第３図Ａに示す形状に加工し、
セラコラ型用マスターとし、セラコラ型を作製した。Example 1 An 8-inch thick acrylic plate was processed into the shape shown in Figure 3A,
This was used as a master for a Ceracola mold, and a Ceracola mold was produced.
市販の酸化インジウム粉末１１７０ｇ、酸化スズ粉末１
３０Ｆｒ（原料粉末１３００ｇ）、ポリカルボン酸系分
散剤（固形分４０％）２５ｇ、アクリルエマルジョン系
バインダー（固形分４０％）２５９６及び純水４００ｇ
を３ｇナイロン製ポット中で直径１５ｍｍの鉄芯入り樹
脂ボールを用いて回転ボールミルにより１６時間混合し
スラリーを得ｌこ 。Commercially available indium oxide powder 1170g, tin oxide powder 1
30Fr (raw material powder 1300g), polycarboxylic acid dispersant (solid content 40%) 25g, acrylic emulsion binder (solid content 40%) 2596 and pure water 400g
A 3 g nylon pot was mixed for 16 hours using a rotating ball mill using a resin ball with a 15 mm diameter iron core to obtain a slurry.
得られたスラリーを充分脱泡した後、常圧にて前記セラ
コラ型に注入し、鋳込み成型を行い成型体を得た。After the obtained slurry was sufficiently degassed, it was poured into the Ceracola mold at normal pressure, and cast molding was performed to obtain a molded body.
その後、得られた成型体を冷間静水圧プレスにて３ ｔ
ｏｎ ／ ｃｄの圧力で圧密化し、脱バインダーを行っ
た後、１３５０℃で３時間焼成し焼結体を得、これを放
電加工及び平面研削で加工し、第３図Ｂに示す形状のＩ
ＴＯターゲットを得゛た。Thereafter, the obtained molded body was subjected to a cold isostatic press for 3 tons.
After compacting at a pressure of on/cd and removing the binder, it was fired at 1350°C for 3 hours to obtain a sintered body, which was processed by electrical discharge machining and surface grinding to form an I in the shape shown in Figure 3B.
Obtained TO target.
得られたターゲットを用いて表１に示すスパッタリング
装置１条件でスパッタリングテストを行った。このとき
ターゲットはインジウム系ハンダ材を用いてバッキング
プレートにボンディングし、材料のない部分はインジウ
ム系シートにより覆って用いた。その結果、得られたタ
ーゲットの利用効率は５２．０％であった。A sputtering test was conducted using the obtained target under the conditions of the sputtering apparatus shown in Table 1. At this time, the target was bonded to the backing plate using an indium-based solder material, and the parts without material were covered with an indium-based sheet. As a result, the utilization efficiency of the obtained target was 52.0%.
実施例２
第４図Ａに示すアクリル板をセラコラ型用マスターとし
て用い、冷間静水圧プレスの圧力を５ｔ ｏ ｎ ／
ｃｄとした以外は実施例１と同様の方法で第４図Ｂに示
す形状のターゲットを得、スパッタリングテストを行っ
た。また、このとき使用した原料、粉末は９００ ｇ、
分散剤２０ｇ、バインダー２０ｇ、水２２０ｇであった
。その結果、得られたターゲットの利用効率は７４，４
％であった。Example 2 The acrylic plate shown in FIG. 4A was used as a master for the Cerakola mold, and the pressure of cold isostatic press was set at 5 ton/min.
A target having the shape shown in FIG. 4B was obtained in the same manner as in Example 1 except that CD was used, and a sputtering test was conducted. In addition, the raw materials and powder used at this time were 900 g,
The amount was 20 g of dispersant, 20 g of binder, and 220 g of water. As a result, the target utilization efficiency obtained was 74.4
%Met.
比較例
１６０ Ｘ ４７０ Ｘ ８ ｍｒａ の塩ビ板をセ
ラコラ型用マスク、−とじて用いた以外は実施例１と同
様の方法で、１２７Ｘ３８１Ｘ６＋ｕ＋ｔの平板状ター
ゲットを得、スパッタリングテストを行った。また、こ
のとき使用した原料粉末は２０００ ｇ、分散剤４５ｇ
、バインダー４５ｇ、水６２５ｇであった。Comparative Example 1 A flat target of 127 x 381 x 6 + u + t was obtained in the same manner as in Example 1, except that a PVC plate of 60 x 470 x 8 mra was used as a Ceracola type mask and closed, and a sputtering test was conducted. Also, the raw material powder used at this time was 2000 g, and the dispersant was 45 g.
, 45 g of binder, and 625 g of water.
その結果、得られたターゲラ１の利用効率は２８．０％
であった。As a result, the utilization efficiency of Targetera 1 was 28.0%.
Met.
表１
使用ターゲットサイズ
１２７Ｘ３８１Ｘ６ｍｎｔ
スパッタ方式
ＤＣマグネトロンスパッ・夕
投入Ｐｏｗｅｒ Ｉ Ｋｖ
スパッタ雰囲気
Ａｒ０．８Ｐａ
（発明の効果）
以上述べたとおり、本発明のＩＴＯターゲットによれば
スパッタリング時のターゲットの利用効率が向上する。Table 1 Target size used: 127 x 381 x 6 mnt Sputtering method DC magnetron sputtering / Evening injection Power I Kv Sputtering atmosphere Ar 0.8 Pa (Effects of the invention) As described above, the ITO target of the present invention improves the efficiency of target use during sputtering. .
更にターゲットの作製の際に原料粉末の使用量が少ない
ため、ターゲットのプライスダウン、成膜した透明導電
膜の単位面積当たりの単価を下げることが可能となる。Furthermore, since the amount of raw material powder used in producing the target is small, it is possible to reduce the price of the target and the unit price per unit area of the formed transparent conductive film.
第１図及び第２図は本発明のＩＴＯターゲットの形状の
一例を示す図である。
第３図及び第４図は本発明の実施例において用いたセラ
コラ型マスター及び得られたターゲットの形状を示す図
である。FIG. 1 and FIG. 2 are diagrams showing an example of the shape of the ITO target of the present invention. FIG. 3 and FIG. 4 are diagrams showing the shape of the Ceracola type master used in the example of the present invention and the obtained target.
Claims (1)
用スパッタリングターゲットにおいて、重量の８０％以
上がスパッタリング時のエロージョンエリア内に存在す
る形状であることを特徴とする透明導電膜用スパッタリ
ングターゲット。(1) A sputtering target for a transparent conductive film containing indium oxide-tin oxide, characterized in that 80% or more of the weight of the sputtering target for a transparent conductive film exists within an erosion area during sputtering.
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63117138A JPH01290764A (en) | 1988-05-16 | 1988-05-16 | Sputtering target for transparent conductive film |
| EP89108558A EP0342537B1 (en) | 1988-05-16 | 1989-05-12 | Process for the manufacture of a sputtering target for producing electroconductive transparent films |
| DE68924095T DE68924095T2 (en) | 1988-05-16 | 1989-05-12 | Method for producing a sputtering target for producing an electrically conductive, transparent layer. |
| CA000599638A CA1337809C (en) | 1988-05-16 | 1989-05-15 | Sputtering target for producing electroconductive transparent films and process for manufacture thereof |
| US07/352,473 US5160675A (en) | 1988-05-16 | 1989-05-16 | Sputtering target for producing electroconductive transparent films and process for manufacture thereof |
| KR1019890006539A KR940003786B1 (en) | 1988-05-16 | 1989-05-16 | Method for making electroconductive transparent films |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63117138A JPH01290764A (en) | 1988-05-16 | 1988-05-16 | Sputtering target for transparent conductive film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01290764A true JPH01290764A (en) | 1989-11-22 |
Family
ID=14704395
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63117138A Pending JPH01290764A (en) | 1988-05-16 | 1988-05-16 | Sputtering target for transparent conductive film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01290764A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8419400B2 (en) | 2005-02-01 | 2013-04-16 | Tosoh Corporation | Sintered body, sputtering target and molding die, and process for producing sintered body employing the same |
| US8778234B2 (en) | 2008-05-12 | 2014-07-15 | Bizesp Limited | Process for the manufacture of a high density ITO sputtering target |
| KR20200037209A (en) | 2017-08-01 | 2020-04-08 | 이데미쓰 고산 가부시키가이샤 | Sputtering target, deposition method of oxide semiconductor film and backing plate |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59136480A (en) * | 1983-01-10 | 1984-08-06 | メルク・パテント・ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフツング | Target for cathode sputtering |
| JPS6039158A (en) * | 1983-08-13 | 1985-02-28 | Shinku Yakin Kk | Target for magnetron type sputtering |
-
1988
- 1988-05-16 JP JP63117138A patent/JPH01290764A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59136480A (en) * | 1983-01-10 | 1984-08-06 | メルク・パテント・ゲゼルシヤフト・ミツト・ベシユレンクテル・ハフツング | Target for cathode sputtering |
| JPS6039158A (en) * | 1983-08-13 | 1985-02-28 | Shinku Yakin Kk | Target for magnetron type sputtering |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8419400B2 (en) | 2005-02-01 | 2013-04-16 | Tosoh Corporation | Sintered body, sputtering target and molding die, and process for producing sintered body employing the same |
| JP2014129231A (en) * | 2005-02-01 | 2014-07-10 | Tosoh Corp | Sintered compact and sputtering target |
| US9920420B2 (en) | 2005-02-01 | 2018-03-20 | Tosoh Corporation | Sintered body, sputtering target and molding die, and process for producing sintered body employing the same |
| US8778234B2 (en) | 2008-05-12 | 2014-07-15 | Bizesp Limited | Process for the manufacture of a high density ITO sputtering target |
| KR20200037209A (en) | 2017-08-01 | 2020-04-08 | 이데미쓰 고산 가부시키가이샤 | Sputtering target, deposition method of oxide semiconductor film and backing plate |
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