JPH01289220A - Manufacture of voltage-dependent nonlinear resistance element - Google Patents
Manufacture of voltage-dependent nonlinear resistance elementInfo
- Publication number
- JPH01289220A JPH01289220A JP63119534A JP11953488A JPH01289220A JP H01289220 A JPH01289220 A JP H01289220A JP 63119534 A JP63119534 A JP 63119534A JP 11953488 A JP11953488 A JP 11953488A JP H01289220 A JPH01289220 A JP H01289220A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- composed mainly
- solder
- sintered body
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000001419 dependent effect Effects 0.000 title claims description 11
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 229910000679 solder Inorganic materials 0.000 claims abstract description 19
- 238000000034 method Methods 0.000 claims abstract description 12
- 230000008018 melting Effects 0.000 claims description 6
- 238000002844 melting Methods 0.000 claims description 6
- 230000005496 eutectics Effects 0.000 claims description 5
- 238000007772 electroless plating Methods 0.000 claims description 4
- 238000010304 firing Methods 0.000 claims description 2
- 238000007747 plating Methods 0.000 abstract description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract description 9
- 230000007797 corrosion Effects 0.000 abstract description 5
- 238000005260 corrosion Methods 0.000 abstract description 5
- 238000007650 screen-printing Methods 0.000 abstract description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 4
- 229910002370 SrTiO3 Inorganic materials 0.000 abstract description 3
- 239000011347 resin Substances 0.000 abstract description 3
- 229920005989 resin Polymers 0.000 abstract description 3
- 239000000126 substance Substances 0.000 abstract description 3
- 239000004094 surface-active agent Substances 0.000 abstract description 3
- KWSLGOVYXMQPPX-UHFFFAOYSA-N 5-[3-(trifluoromethyl)phenyl]-2h-tetrazole Chemical compound FC(F)(F)C1=CC=CC(C2=NNN=N2)=C1 KWSLGOVYXMQPPX-UHFFFAOYSA-N 0.000 abstract description 2
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 abstract description 2
- 238000009713 electroplating Methods 0.000 abstract description 2
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 abstract description 2
- 229910001379 sodium hypophosphite Inorganic materials 0.000 abstract description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 abstract 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 229910052759 nickel Inorganic materials 0.000 abstract 1
- 229910052763 palladium Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 229910052709 silver Inorganic materials 0.000 abstract 1
- 239000004332 silver Substances 0.000 abstract 1
- 229910000807 Ga alloy Inorganic materials 0.000 description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000007772 electrode material Substances 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- 229910010252 TiO3 Inorganic materials 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 235000012489 doughnuts Nutrition 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 description 1
- OFNHPGDEEMZPFG-UHFFFAOYSA-N phosphanylidynenickel Chemical compound [P].[Ni] OFNHPGDEEMZPFG-UHFFFAOYSA-N 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000001509 sodium citrate Substances 0.000 description 1
- NLJMYIDDQXHKNR-UHFFFAOYSA-K sodium citrate Chemical compound O.O.[Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NLJMYIDDQXHKNR-UHFFFAOYSA-K 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Landscapes
- Thermistors And Varistors (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、電子機器、電気機器で発生する異常電圧、ノ
イズ、静電気から半導体及び回路を保護するために、
Ｓｒτ１０．を主成分とする焼結体を用いた電圧依存性
非直線抵抗体素子の製造法に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention provides a method for protecting semiconductors and circuits from abnormal voltages, noise, and static electricity generated in electronic and electrical equipment.
Srτ10. The present invention relates to a method for manufacturing a voltage-dependent nonlinear resistor element using a sintered body containing as a main component.
従来の技術
電圧依存性非直線抵抗体素子は、焼結体の表面に設けた
電極間に印加される電圧によって抵抗値が非直線的に変
化し、印加電圧がある一定の電圧を越えると抵抗値が急
激に減少する性質を有している。この性質を利用して、
電子機器の直流モータの火花消去、ノイズ除去、リレー
接点のノイズ除去及び保護、ＩＣやＬＦ３１の保護及び
誤動作防止、テレビジョン受像機のブラウン管回路の放
電吸収などに広く用いられている。Conventional technology Voltage-dependent nonlinear resistor elements have a resistance value that changes nonlinearly depending on the voltage applied between electrodes provided on the surface of a sintered body, and when the applied voltage exceeds a certain level, the resistance changes. It has the property that the value decreases rapidly. Taking advantage of this property,
It is widely used for extinguishing sparks and removing noise from DC motors in electronic equipment, removing and protecting noise from relay contacts, protecting and preventing malfunctions of ICs and LF31s, and absorbing discharges from cathode ray tube circuits in television receivers.
従来の電圧依存性非直線抵抗体素子としては。As a conventional voltage-dependent nonlinear resistor element.
ｚｎｏ系、 ＳｎＯ２系、 Ｆｅ２Ｏ，系、 ＳｉＣ系
、 Ｔｉｅ、、系などのものが知られている。このうち
５ｎ０２系とＦｅ２Ｏ，系は焼結体自体は直線性の抵抗
体であり。Known examples include the ZNO system, SnO2 system, Fe2O system, SiC system, and Tie system. Among these, the sintered bodies of the 5n02 series and Fe2O series are linear resistors.
これに特別な電極を付与することによって焼結体と電極
との間にエネルギー障壁を形成し、バリスタ特性を得て
いる。また、ＺｎＯ系、 ＴｉＯ２系は粒子境界でバリ
スタ特性を得、ＳｉＣ系は粒子間の接触面でバリスタ特
性を得ているので、特に電極は選ばない。一方、特性面
ではＺｎＯ系、 ＳｉＣ系は非直線性が大きく、比較的
高い電圧の吸収には優れた効果を示すが、誘電率が小さ
く、比較的低い電圧の吸収にはほとんど効果を示さず、
５ｎ０２系。By adding a special electrode to this, an energy barrier is formed between the sintered body and the electrode, and varistor characteristics are obtained. Furthermore, since ZnO and TiO2 systems obtain varistor properties at grain boundaries, and SiC systems obtain varistor properties at the contact surfaces between particles, the electrode is not particularly selected. On the other hand, in terms of characteristics, ZnO-based and SiC-based materials have large nonlinearity and are excellent in absorbing relatively high voltages, but have low dielectric constants and are hardly effective in absorbing relatively low voltages. ,
5n02 series.
Ｆｅ２Ｏ３系、 ＴｉＯ２系は非直線性が小さく、エネ
ルギーの吸収が不十分である。そこで、最近になって誘
電率が大きく、比較的低い電圧の吸収に効果のあるＳｒ
ＴｉＯ３系が開発されている。Fe2O3 and TiO2 systems have low nonlinearity and insufficient energy absorption. Recently, Sr., which has a large dielectric constant and is effective in absorbing relatively low voltages,
A TiO3 system has been developed.
発明が解決しようとする課題
しかしながら、前記の従来の電圧依存性非直線抵抗体素
子は、誘電率が小さくバリスタ電圧が高いだめ、比較的
低い電圧のサージやノイズの吸収に効果を示さないとい
った焼結体自身の課題と、焼結体と電極の接触が非オー
ミツク性接触になっているため、焼結体と電極の界面で
一種の整流作用が生しることから、焼結体自身の持って
いる優れた非直線性を有効に活用できていないといった
焼結体と電極の組み合わせの課題を有している。また、
用途によっては素子に樹脂などのコーティングをせずに
使用するため１周囲の雰囲気などの影響を受は易く、し
かも比較的大きな電力を流す場合には素子が発熱して電
極が変質しやすぐなり、信頼性に劣るといった課題を有
していた。Problems to be Solved by the Invention However, the conventional voltage-dependent nonlinear resistor elements described above have a low dielectric constant and a high varistor voltage, so they are not effective in absorbing surges and noise at relatively low voltages. There are problems with the sintered body itself, and because the contact between the sintered body and the electrode is non-ohmic, a type of rectification effect occurs at the interface between the sintered body and the electrode. The problem with the combination of the sintered body and the electrode is that the excellent nonlinearity of the sintered body cannot be effectively utilized. Also,
Depending on the application, the element is used without a coating such as resin, so it is easily affected by the surrounding atmosphere, and when a relatively large amount of power is applied, the element heats up and the electrodes are easily deteriorated. , which had problems such as poor reliability.
本発明はこのような課題を解決するもので、焼結体の持
つ優れた特性全充分に発揮させ、焼結体に対する電極の
接着力が強く、半田付は性に優れ。The present invention solves these problems by making full use of all of the excellent properties of the sintered body, providing strong adhesion of electrodes to the sintered body, and excellent soldering properties.
耐食性及び信頼性に富み、しかも材料コストの安価な電
極構造を有する電圧依存性非直線抵抗体素子を提供する
ことを目的とするものである。The object of the present invention is to provide a voltage-dependent nonlinear resistor element having an electrode structure that is highly corrosion resistant and reliable, and has a low material cost.
課題を解決するための手段 前記の課題を解決するために本発明では。Means to solve problems The present invention aims to solve the above problems.
５ｒＴｉＯ、を主成分とする焼結体にＣｕを主成分とす
るペーストを空気中で焼成してオーミック性電極を設け
、さらにその上に無電解によってＮｉを主成分とするメ
ッキを施した上に半田を主成分とする電極を重ねて設け
たものである。また、前記半田として共晶点よりも融点
の高い半田を用いてなるものである。An ohmic electrode was provided on a sintered body mainly composed of 5rTiO by baking a paste mainly composed of Cu in air, and then electroless plating was applied on the sintered body mainly composed of Ni. This is a stack of electrodes whose main component is solder. Further, as the solder, a solder having a melting point higher than the eutectic point is used.
そして、５ｒＴｉＯ，のＳｒの−Ｎ５をＣａ、Ｂａ、Ｍ
ｇのうちの一つまたは複数の元素で置き換えたものを焼
結体の主成分とするものである。And -N5 of Sr of 5rTiO, Ca, Ba, M
The main component of the sintered body is one in which one or more elements of g are substituted.
作用
さて、５ｒＴｉＯ５ｆ主成分とする焼結体に通常の電極
を付与すると、電極が焼結体に対して非オーミツク性接
触となり、焼結体と電極の界面で整流作用が生じ、焼結
体自身の持っている優れたバリスタ特性が鈍化されてし
まい１本来の特性を充分に発揮できなくなる。従って、
電極としては５ｒＴｉＯ、との間でオーミック性接触す
るものでなければならない。このオーミック性接触する
電極としては、Ｉｎ−Ｇａ合金によるものが考えられる
。Function When a normal electrode is applied to a sintered body mainly composed of 5rTiO5f, the electrode comes into non-ohmic contact with the sintered body, a rectifying action occurs at the interface between the sintered body and the electrode, and the sintered body itself The excellent varistor properties of 1 are dulled and the original properties of 1 cannot be fully demonstrated. Therefore,
The electrode must be in ohmic contact with 5rTiO. As the electrode that makes this ohmic contact, one made of an In-Ga alloy can be considered.
しかし、Ｉｎ−Ｇａ合金はコストが高く量産には適さな
いし、またＩｎ−Ｇａ合金を焼結体に付けるにはこすり
付けるかまたは超音波ろう付けなどの方法しかなく、焼
結体に対する電極の接着力が弱く。However, In-Ga alloy is expensive and not suitable for mass production, and the only way to attach In-Ga alloy to a sintered body is by rubbing or ultrasonic brazing. Power is weak.
電極剥離の不良が生じ易い。また、Ｉｎ−Ｇａ合金は融
点が低く、リード線の半田付けが困難である。Defects in electrode peeling are likely to occur. Furthermore, the In-Ga alloy has a low melting point, making it difficult to solder lead wires.
そこで、本発明では電極の形成方法が簡単で、かつ電極
材料のコストが比較的安価なものを検討した結果、電極
形成方法としては空気中焼成を採用し、電極材料にはＣ
ｕを採用した。従来、 Ｃｕは空気中で焼成すると容易
に酸化してしまい電極には使用しにくい面があったが、
Ｃｕの粒径など、Ｃｕ を主成分とするベースｉ適宜選
択使用することにより、Ｃｕを主成分とするオーミック
性電極を簡単に形成することができる。Therefore, in the present invention, as a result of considering a simple electrode formation method and a relatively low cost electrode material, we adopted in-air firing as the electrode formation method and used carbon dioxide as the electrode material.
U was adopted. Previously, Cu easily oxidized when fired in air, making it difficult to use in electrodes.
By appropriately selecting and using a base i containing Cu as a main component, such as the particle size of Cu, an ohmic electrode containing Cu as a main component can be easily formed.
また、電極の耐食性、信頼性を高めるためにＮｉ メッ
キを施し、さらにその上に半田の電極層を設けた。ここ
で、共晶点よりも融点の高い半田の電極を設けることに
より、素子に大電流が流れた場合に素子が発熱して電極
が変質したり劣化したりすることが少ないため、信頼性
を著しく向上することができる。さらに、これら電極材
料はＩｎ−Ｇａ合金に比べて著しく安価であり、量産性
に富み、焼結体と電極との接着力が非常に大きく。Furthermore, in order to improve the corrosion resistance and reliability of the electrodes, Ni plating was applied, and a solder electrode layer was further provided on top of the Ni plating. By providing solder electrodes with a melting point higher than the eutectic point, reliability is improved because the element does not generate heat and the electrode changes or deteriorates when a large current flows through the element. can be significantly improved. Furthermore, these electrode materials are significantly cheaper than In--Ga alloys, are easy to mass-produce, and have a very strong adhesive force between the sintered body and the electrode.
電極剥離不良が発生しにくく、耐食性に富み、しかも経
時変化の小さい、信頼性が高く安価な５ｒＴｉＯ，系の
電圧依存性非直線抵抗体素子を提供できることになる。It is possible to provide a highly reliable and inexpensive 5rTiO-based voltage-dependent nonlinear resistor element that is less prone to electrode peeling defects, has high corrosion resistance, and has little change over time.
実施例
以下に本発明について、実施例をあげて具体的に説明す
る。EXAMPLES The present invention will be specifically described below with reference to Examples.
５ｒＣＯ、、Ｔｉ０２をＳｒＴｉＯ３の比率になるよう
に秤量し、ボールミルなどで１６時時間式混合し、脱水
乾燥した後、１０００°Ｃで４時間仮焼し、古びボール
ミルなどで２０時時間式粉砕し、脱水乾燥し５ｒＴｉＯ
，ｉ合成する。こうして得た５ｒＴ１０３１００モル部
に対して”２０５ ’ｔｏ、２モル部、ＣｕＯを０．
１−Ｅ−ル部、ＭｎＯ□を０．１６モル部をそれぞれ秤
量し、ボールミルなどで２０時時間式混合し、脱水乾燥
する。次に、Ｐｖム（ポリビニルアルコール）などの有
機バインダーを１０ｗｔ％加えて造粒し、中心部に穴の
開いたドーナツ状に成形する。この成形体を空気中で１
０００°Ｃ１２時間焼成した後、Ｎ２：Ｈ２＝９ ：
１の還元性雰囲気中で１４００°Ｃ，８時間焼成し、さ
らに空気中で１０６０°Ｃ１１２時間焼成して第１図、
第２図に示すように焼結体１を作成する。次に、前記焼
結体１の電極を形成する領域（この実施例では３ケ所）
にＣｕを主成分とし、硼硅酸鉛系ガラスフリット及び樹
脂などを含有してなるペーストをスクリーン印刷などに
より塗布した後、乾燥させ、空気中で２２０℃、６分間
焼成することにより、焼結体１にＣｕ を主成分とする
オーミック性電極２を形成する。ここで、Ｃｕの平均粒
径は３μｍのものを使用した。次に、前記オーミック性
電極２の上にパラジウム−銀からなる表面活性剤３をス
クリーン印刷などにより塗布した後、塩化ニッケル、次
亜燐酸ナトリウム、クエン酸ナトリウムなどからなるメ
ッキ液に浸漬し、７６〜９０°Ｃの温度でニッケルーリ
ンの無電解メッキを施した後。5rCO, Ti02 was weighed to have the same ratio as SrTiO3, mixed in a ball mill for 16 hours, dehydrated and dried, calcined at 1000°C for 4 hours, and pulverized in an old ball mill for 20 hours. , dehydrated and dried 5rTiO
, i are synthesized. To 100 mol parts of 5rT103 thus obtained, 205'to 2 mol parts and 0.00 mol parts of CuO were added.
Weigh out 0.16 mol part of 1-E-L part and 0.16 mol part of MnO□, mix for 20 hours using a ball mill, etc., and dehydrate and dry. Next, 10 wt % of an organic binder such as Pvm (polyvinyl alcohol) is added and granulated, and formed into a donut shape with a hole in the center. This molded body is placed in the air for 1
After baking at 000°C for 12 hours, N2:H2=9:
Fig. 1 was baked at 1400°C for 8 hours in a reducing atmosphere of 1, and further baked at 1060°C for 112 hours in air.
A sintered body 1 is prepared as shown in FIG. Next, areas of the sintered body 1 where electrodes are to be formed (three locations in this example)
After applying a paste consisting mainly of Cu and containing lead borosilicate glass frit and resin by screen printing, etc., it is dried and fired in air at 220°C for 6 minutes to create a sintered material. An ohmic electrode 2 whose main component is Cu is formed on the body 1 . Here, the average particle diameter of Cu used was 3 μm. Next, a surface active agent 3 made of palladium-silver is applied on the ohmic electrode 2 by screen printing or the like, and then immersed in a plating solution made of nickel chloride, sodium hypophosphite, sodium citrate, etc. After electroless plating of nickel-phosphorus at a temperature of ~90°C.
流水中で洗浄し乾燥する。次に、非酸化性雰囲気中で４
００°Ｃで熱処理する。このようにしてオーミック性電
極２の上にＮｉメッキ４を施す。そして、さらにその上
に電解メッキにより半田を生成分とする電極６を設け、
流水中で洗浄し乾燥することにより、電圧依存性非直線
抵抗体素子が得られる。Wash under running water and dry. Next, 4 in a non-oxidizing atmosphere
Heat treatment at 00°C. In this way, Ni plating 4 is applied on the ohmic electrode 2. Then, an electrode 6 made of solder is further provided thereon by electrolytic plating,
By washing in running water and drying, a voltage-dependent nonlinear resistor element is obtained.
なお、無電解メッキによる電極の形成方法としては、メ
ッキの前に有機物からなるメッキレジストを電極形成領
域以外の部分に塗布しておき、メッキした後に除去する
方法でも同様に可能である。Note that as a method for forming electrodes by electroless plating, it is also possible to apply a plating resist made of an organic substance to a portion other than the electrode formation area before plating, and to remove it after plating.
また、半田の電極を形成する方法としては、半田槽にデ
イツプするなどどのような方法でもかまわない。さらに
、半田の電極としては共晶点よりも融点の高い半田を主
成分とする構成であっても良い。また１本実施例ではド
ーナツ状の素子についてのみ示したが、その他の形状（
例えば１円板状。Moreover, any method may be used to form the solder electrode, such as dipping it in a solder bath. Further, the solder electrode may have a configuration in which the main component is solder having a melting point higher than the eutectic point. In addition, although only a donut-shaped element was shown in this embodiment, other shapes (
For example, one disk shape.
円筒状、角板状など）であってもかまわない。そして、
焼結体の主成分であるｓｒの一部をＣａ。It may be cylindrical, square plate, etc.). and,
Part of sr, which is the main component of the sintered body, is Ca.
Ｂａ、Ｍｇのうちの一つまたは複数の元素で置き換えて
もよいし、添加物の成分は何であっても同様の効果が得
られることを確認した。It has been confirmed that one or more of Ba and Mg may be substituted, and the same effect can be obtained regardless of the additive components.
発明の効果
以上に示したように本発明によれば、得られた電極は焼
結体に対してオーミック性接触をし、焼結体と電極の界
面での整流作用がないため、焼結体自身の有する電圧非
直線性を充分に発揮させることができる。また、焼結体
と電極との接着力が非常に強いため、電極剥離などの不
良が発生しに〈＜、信頼性が極めて高い。しかも、オー
ミック性電極の上にＷｉメッキを施すことにより耐食性
に優れ、経時変化が小さく安定した特性が得られる。ま
た、Ｎｉメッキの上に半田を主成分とする電極を重ねて
設けることにより、外部電極との接続が極めて容易にな
る。さらに、共晶点よりも融点の高い半田の電極を設け
た場合には、素子に大電嬢が流れて素子が発熱した場合
でも電極の変質や劣化が極めて小さくなり、信頼性を高
めることができる。また、Ｉｎ−Ｇａ合金を使用した場
合に比べ電極材料費が大変安く、量産に適していると言
う効果が得られる。Effects of the Invention As described above, according to the present invention, the obtained electrode makes ohmic contact with the sintered body, and there is no rectifying effect at the interface between the sintered body and the electrode, so that the sintered body It is possible to fully utilize its own voltage nonlinearity. In addition, since the adhesive force between the sintered body and the electrode is very strong, defects such as electrode peeling do not occur, and the reliability is extremely high. Moreover, by applying Wi plating on the ohmic electrode, it is possible to obtain excellent corrosion resistance and stable characteristics with little change over time. Furthermore, by overlapping the electrodes mainly composed of solder on the Ni plating, connection with external electrodes becomes extremely easy. Furthermore, if electrodes are made of solder that has a melting point higher than the eutectic point, even if a large electrical current flows through the device and the device generates heat, the deterioration or deterioration of the electrodes will be extremely small, improving reliability. can. In addition, the cost of electrode materials is much lower than when using an In-Ga alloy, making it suitable for mass production.
第１図は本発明の製造法により得られた素子の一実施例
を示す上面図、第２図は同断面図である。
１・・・・・・焼結体、２・・・・・・オーミック性電
極、３・・・・・・表面活性剤、４・・・・・・Ｎｉメ
ッキ、６・・・・・・半田電極。
代理人の氏名 弁理士 中 尾 敏 男 ほか１名菓
１ 図FIG. 1 is a top view showing one embodiment of a device obtained by the manufacturing method of the present invention, and FIG. 2 is a sectional view thereof. 1...Sintered body, 2...Ohmic electrode, 3...Surface active agent, 4...Ni plating, 6... solder electrode. Name of agent: Patent attorney Toshio Nakao and one other name
1 figure
Claims (3)
成分とするペーストを空気中で焼成してなるオーミック
性電極を設け、その上に無電解によりＮｉを主成分とす
るメッキを施し、さらにその上に半田を主成分とする電
極を重ねて設けたことを特徴とする電圧依存性非直線抵
抗体素子の製造法。(1) An ohmic electrode made by firing a paste mainly composed of Cu in air is provided on a sintered body mainly composed of SrTiO_3, and plated with Ni mainly composed on it by electroless plating, A method for manufacturing a voltage-dependent nonlinear resistor element, characterized in that an electrode containing solder as a main component is further provided on top of the electrode.
ことを特徴とする特許請求の範囲第１項に記載の電圧依
存性非直線抵抗体素子の製造法。(2) The method for manufacturing a voltage-dependent nonlinear resistor element according to claim 1, characterized in that a solder having a melting point higher than the eutectic point is used as the solder.
の内の一つまたは複数の元素で置き換えたものを焼結体
の主成分とする特許請求の範囲第１項または第２項に記
載の電圧依存性非直線抵抗体素子の製造法。(3) Part of Sr in SrTiO_3 is Ca, Ba, Mg
The method for manufacturing a voltage-dependent nonlinear resistor element according to claim 1 or 2, wherein the main component of the sintered body is one or more of the following elements.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63119534A JPH01289220A (en) | 1988-05-17 | 1988-05-17 | Manufacture of voltage-dependent nonlinear resistance element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63119534A JPH01289220A (en) | 1988-05-17 | 1988-05-17 | Manufacture of voltage-dependent nonlinear resistance element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01289220A true JPH01289220A (en) | 1989-11-21 |
Family
ID=14763665
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63119534A Pending JPH01289220A (en) | 1988-05-17 | 1988-05-17 | Manufacture of voltage-dependent nonlinear resistance element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01289220A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0473903A (en) * | 1990-07-16 | 1992-03-09 | Chichibu Cement Co Ltd | Semiconductor device and manufacture thereof |
-
1988
- 1988-05-17 JP JP63119534A patent/JPH01289220A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0473903A (en) * | 1990-07-16 | 1992-03-09 | Chichibu Cement Co Ltd | Semiconductor device and manufacture thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4460622A (en) | Electroconductive paste to be baked on ceramic bodies to provide capacitors, varistors or the like | |
| US4854936A (en) | Semiconductive ceramic composition and semiconductive ceramic capacitor | |
| US4053864A (en) | Thermistor with leads and method of making | |
| JPH01289220A (en) | Manufacture of voltage-dependent nonlinear resistance element | |
| JPH01289213A (en) | Manufacture of voltage-dependent nonlinear resistance element | |
| JPH01289208A (en) | Manufacture of voltage-dependent nonlinear resistance element | |
| JP2618019B2 (en) | Conductive paint for plating base and plating method using the same | |
| JPH01289216A (en) | Manufacture of voltage-dependent nonlinear resistance element | |
| JPH01226105A (en) | Voltage-dependent non-linear resistor element | |
| JP2830322B2 (en) | Voltage-dependent nonlinear resistor porcelain composition and method for manufacturing varistor | |
| JPH01226116A (en) | Voltage-dependent non-linear resistor element | |
| JPH01289219A (en) | Manufacture of voltage-dependent nonlinear resistance element | |
| JPH01289217A (en) | Manufacture of voltage-dependent nonlinear resistance element | |
| JPH01289212A (en) | Manufacture of voltage-dependent nonlinear resistance element | |
| JPH01226106A (en) | Voltage-dependent non-linear resistor element | |
| JPS6322444B2 (en) | ||
| JPS62238602A (en) | Positive characteristics porcelain | |
| JPS62199001A (en) | Positive characteristics porcelain semiconductor | |
| JPH01289221A (en) | Manufacture of voltage-dependent nonlinear resistance element | |
| JPS6331354Y2 (en) | ||
| JP2882128B2 (en) | Voltage-dependent nonlinear resistor porcelain element | |
| JPH10289808A (en) | Functional ceramic element | |
| JPS62222601A (en) | Positive characteristics porcelain semiconductor | |
| JPH06338215A (en) | Conductive paste | |
| JPH0670935B2 (en) | Material for forming electrodes of grain boundary insulated porcelain semiconductor capacitors |