JPH01283374A - Method for depositing thin aluminum film - Google Patents
Method for depositing thin aluminum filmInfo
- Publication number
- JPH01283374A JPH01283374A JP11434388A JP11434388A JPH01283374A JP H01283374 A JPH01283374 A JP H01283374A JP 11434388 A JP11434388 A JP 11434388A JP 11434388 A JP11434388 A JP 11434388A JP H01283374 A JPH01283374 A JP H01283374A
- Authority
- JP
- Japan
- Prior art keywords
- aluminum
- growth
- film
- substrate
- compd
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 14
- 229910052782 aluminium Inorganic materials 0.000 title claims description 36
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title claims description 36
- 238000000151 deposition Methods 0.000 title claims description 7
- YNLAOSYQHBDIKW-UHFFFAOYSA-M diethylaluminium chloride Chemical compound CC[Al](Cl)CC YNLAOSYQHBDIKW-UHFFFAOYSA-M 0.000 claims abstract description 3
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 239000010409 thin film Substances 0.000 claims description 7
- 239000002994 raw material Substances 0.000 claims description 5
- 125000001309 chloro group Chemical group Cl* 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- -1 aluminum compound Chemical class 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 abstract description 13
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 12
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- 238000007323 disproportionation reaction Methods 0.000 abstract description 2
- 238000005979 thermal decomposition reaction Methods 0.000 abstract description 2
- 125000002524 organometallic group Chemical group 0.000 abstract 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 abstract 2
- 239000007858 starting material Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 description 21
- 239000010408 film Substances 0.000 description 7
- 238000000354 decomposition reaction Methods 0.000 description 6
- 238000010494 dissociation reaction Methods 0.000 description 6
- 230000005593 dissociations Effects 0.000 description 6
- 238000011109 contamination Methods 0.000 description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- 239000001257 hydrogen Substances 0.000 description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 4
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical class Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 3
- 230000003197 catalytic effect Effects 0.000 description 3
- 229930195733 hydrocarbon Natural products 0.000 description 3
- 150000002430 hydrocarbons Chemical class 0.000 description 3
- 238000001819 mass spectrum Methods 0.000 description 3
- MCULRUJILOGHCJ-UHFFFAOYSA-N triisobutylaluminium Chemical compound CC(C)C[Al](CC(C)C)CC(C)C MCULRUJILOGHCJ-UHFFFAOYSA-N 0.000 description 3
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- 230000004913 activation Effects 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 125000000962 organic group Chemical group 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- YZCKVEUIGOORGS-NJFSPNSNSA-N Tritium Chemical compound [3H] YZCKVEUIGOORGS-NJFSPNSNSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- SIPUZPBQZHNSDW-UHFFFAOYSA-N bis(2-methylpropyl)aluminum Chemical compound CC(C)C[Al]CC(C)C SIPUZPBQZHNSDW-UHFFFAOYSA-N 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- ZTHNOZQGTXKVNZ-UHFFFAOYSA-L dichloroaluminum Chemical compound Cl[Al]Cl ZTHNOZQGTXKVNZ-UHFFFAOYSA-L 0.000 description 1
- JGHYBJVUQGTEEB-UHFFFAOYSA-M dimethylalumanylium;chloride Chemical compound C[Al](C)Cl JGHYBJVUQGTEEB-UHFFFAOYSA-M 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- UAIZDWNSWGTKFZ-UHFFFAOYSA-L ethylaluminum(2+);dichloride Chemical compound CC[Al](Cl)Cl UAIZDWNSWGTKFZ-UHFFFAOYSA-L 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- YSTQWZZQKCCBAY-UHFFFAOYSA-L methylaluminum(2+);dichloride Chemical compound C[Al](Cl)Cl YSTQWZZQKCCBAY-UHFFFAOYSA-L 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000001004 secondary ion mass spectrometry Methods 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明はアルミニウム薄膜の堆積方法詳しくは有機金属
気相成長方法にかかる。DETAILED DESCRIPTION OF THE INVENTION (Industrial Field of Application) The present invention relates to a method of depositing an aluminum thin film, and more particularly to a metal organic vapor phase epitaxy method.
（従来の技術）
半導体素子の集積度が高くなるにしたがい、より高度な
微細加工技術が要求されるようになった。例えば１６Ｍ
ビットＤＲＡＭではサブミクロンの精度が必要となる。(Prior Art) As the degree of integration of semiconductor devices increases, more advanced microfabrication techniques are required. For example 16M
Bit DRAM requires submicron precision.
特に微細配線技術は素子サイズに直接影響を与えること
からますます重要になってきている。配線材料にはアル
ミニウムが用いられることが多いが、従来は蒸着により
アルミニウム堆積を行なってきた。しかし加工精度がサ
ブミクロンになると、蒸着法ではコンタクトホールを埋
めきることができない等の問題点が生じる。また選択成
長も不可能であった。このため気相成長法（Ｃｈｅｍｉ
ｃａｌ Ｖａｐｏｒ Ｄｅｐｏｓｉｔｉｏｎ； ＣＶＤ
）によりアルミニウムを堆積することが近年試みられて
いる。アルミニウムＣＶＤのソースとして有機アルミニ
ウム、例えばトリメチルアルミニウム（ＴＭＡ）、トリ
イソブチルアルミニウム（ＴＩＢＡ）などが用いられる
ことが多い。In particular, fine wiring technology is becoming increasingly important as it directly affects device size. Aluminum is often used as a wiring material, and conventionally aluminum has been deposited by vapor deposition. However, when the processing precision becomes sub-micron, problems arise such as the inability to completely fill the contact hole using the vapor deposition method. Also, selective growth was not possible. For this reason, the vapor phase growth method (Chemi)
cal vapor deposition; CVD
) has recently been attempted to deposit aluminum. Organic aluminum, such as trimethylaluminum (TMA) and triisobutylaluminum (TIBA), is often used as a source for aluminum CVD.
（発明が解決しようとする問題点）
ＴＭＡをソースとしたアルミニウムＣＶＤの場合、分解
温度が高いため成長温度が高くなるという欠点があった
。また成長層のカーボン汚染がかなりあり、抵抗率等に
影響を与える。プラズマＣＶＤ等の手法により成長温度
の低下が試みられているが、カーボン汚染については改
善されていない。(Problems to be Solved by the Invention) In the case of aluminum CVD using TMA as a source, there is a drawback that the growth temperature is high due to the high decomposition temperature. In addition, there is considerable carbon contamination in the grown layer, which affects resistivity and the like. Attempts have been made to lower the growth temperature using techniques such as plasma CVD, but carbon contamination has not been improved.
また選択成長は困難である。Also, selective growth is difficult.
一方これらの問題点を解決するものとしてＴＩＢＡをソ
ースとした成長が行なわれており、低）話でかつカーボ
ン汚染の少ない膜が得られている。On the other hand, as a solution to these problems, growth using TIBA as a source has been carried out, and a film with low carbon pollution and less carbon contamination has been obtained.
しかし、原料の蒸気圧が４０’ＣにおいてＩＴｏｒｒと
低く、また５０°Ｃにすると蒸気圧の低いジイソブチル
アルミニウムハイドライドに分解してしまうなどの問題
点があり、成長装置、条件などの制約が多い。However, there are problems in that the vapor pressure of the raw material is as low as ITorr at 40'C, and it decomposes into diisobutylaluminum hydride, which has a low vapor pressure at 50°C, and there are many restrictions on the growth equipment, conditions, etc.
（問題を解決するための手段）
本発明は、アルミニウムを含む有機金属を基板上で熱分
解させ、上記基板上にアルミニウムを堆積させるアルミ
ニウムの有機金属気相成長法（ＭＯＣＶＤ）において、
アルミニウムと塩素原子の結合を１個または２個含むよ
うな有機金属を原料とすることを特徴としたアルミニウ
ム薄膜の堆積方法を提供するものである。(Means for Solving the Problems) The present invention provides an aluminum metal organic chemical vapor deposition method (MOCVD) in which an organic metal containing aluminum is thermally decomposed on a substrate and aluminum is deposited on the substrate.
The present invention provides a method for depositing an aluminum thin film, characterized in that an organic metal containing one or two bonds between aluminum and chlorine atoms is used as a raw material.
（作用）
アルミニウムと塩素原子の結合を１個または２個含む有
機金属は、熱分解によりＡｌＣｌまたはＡｌＣｌ２とな
る。これらのアルミニウム塩化物からは３ＡＩＣ１→２
Ａ１ ＋ ＡｌＣｌ３
３ＡＩＣＩ。→Ａ１＋２ＡＩＣ１３
なる不均等化反応によりアルミニウムが生成する。これ
らの不均等化反応は有機基が付加した状態ではおきない
ため、この反応により生成、堆積したアルミニウム膜は
カーボンによる汚染の少ないものとなる。これに対し塩
素原子との結合を含まない有機アルミニウム化合物の場
合、完全に熱分解せず有機基がついた状態でも堆積する
ためカーホン汚染が多くなる。(Function) An organic metal containing one or two bonds between aluminum and chlorine atoms becomes AlCl or AlCl2 by thermal decomposition. From these aluminum chlorides, 3AIC1→2
A1 + AlCl3 3AICI. →A1+2AIC13 Aluminum is produced by the disproportionation reaction. Since these unequalization reactions do not occur in a state where organic groups are added, the aluminum film produced and deposited by this reaction is less contaminated by carbon. On the other hand, in the case of organoaluminum compounds that do not contain bonds with chlorine atoms, they do not completely thermally decompose and are deposited even with organic groups attached, resulting in increased carphone contamination.
さらにジエチルアルミニウムクロライド（（Ｃ２Ｉ−Ｉ
５）２ＡＩＣＩ； ＤＥＡＩＣＩ）をソースとした場合
、成長）温度の低温化および選択成長が可能となる。図
１はアルミニウム基板上にＤＥＡＩＣＩを供給したとき
の生成炭化水素のマススペクトルであるが、この場合Ｄ
ＥＡＩＣＩはアルミニウム基板表面での触媒作用によっ
でβ解離により分解しＣ２Ｈ４を生成する。β解離によ
る分解は活性化エネルギーが低いため低温での成長が可
能となる。一方５１０２上にＤＥＡＩＣＩを供給したと
きは、図２に示すようにラジカル解裂によりＣ４Ｈ１ｏ
を生成する。ラジカル解裂による分解の活性化エネルギ
ーはβ解離より高いのでβ解離に比べより高い分解温度
が必要になる。したがってアルミニウム基板上でのβ解
離は起きるが、５１０２上でのラジカル解裂は起きない
温度で成長を行なうことにより、アルミニウム基板上の
みに選択的に成長することが可能となる。同様にＧａＡ
ｓや８１基板表面でもアルミニウム基板表面のような触
媒作用があるため、選択的にアルミニウムを成長させる
ことができる。またラジカル解裂が起きる温度で成長す
ることにより選択性のない成長を行なうことも可能であ
る。Furthermore, diethylaluminum chloride ((C2I-I
5) When 2AICI; DEAICI) is used as a source, lowering the growth temperature and selective growth are possible. Figure 1 shows the mass spectrum of hydrocarbons produced when DEAICI is supplied onto an aluminum substrate; in this case, D
EAICI is decomposed by β dissociation by catalytic action on the aluminum substrate surface to generate C2H4. Decomposition by β dissociation has a low activation energy, making growth possible at low temperatures. On the other hand, when DEAICI was supplied onto 5102, C4H1o
generate. Since the activation energy for decomposition due to radical dissociation is higher than that for β dissociation, a higher decomposition temperature is required than for β dissociation. Therefore, by performing growth at a temperature where β dissociation occurs on the aluminum substrate but radical decomposition on 5102 does not occur, it becomes possible to grow selectively only on the aluminum substrate. Similarly, GaA
Since the surface of the S and 81 substrates has the same catalytic effect as the surface of the aluminum substrate, aluminum can be selectively grown. It is also possible to perform non-selective growth by growing at a temperature at which radical decomposition occurs.
（実施例）
以下本発明について実施例を示す図面を参照して説明す
る。(Example) The present invention will be described below with reference to drawings showing examples.
第３図は本発明に基づくアルミニウム薄膜堆積装置の概
略である。ＤＥＡＩＣＩＩは水素キャリアカス２により
バブルされ反応・管３に導入した。水素キャリアガス２
の流量は流量制御器４により制御した。FIG. 3 is a schematic diagram of an aluminum thin film deposition apparatus according to the present invention. DEAIC II was bubbled by the hydrogen carrier gas 2 and introduced into the reaction tube 3. Hydrogen carrier gas 2
The flow rate of was controlled by a flow rate controller 4.
ＤＥＡＩＣＩＩは恒温槽５により６０°Ｃに保たれる。DEAIC II is maintained at 60°C in a constant temperature bath 5.
途中配管はＤＥＡＩＣＩの析出を防ぐためヒーター６に
より８０°Ｃに昇温した。基板７はカーボンサセプタ８
上におかれ、高周波加熱により成長温度まで昇温される
。反応管３は圧力制御器９、ポンプ１０およびコン）・
ロールバルブ１１により１００Ｔｏｒｒに保った。The temperature of the intermediate piping was raised to 80°C using a heater 6 to prevent the precipitation of DEAICI. Substrate 7 is carbon susceptor 8
The temperature is raised to the growth temperature by high-frequency heating. The reaction tube 3 is equipped with a pressure controller 9, a pump 10 and a controller).
The pressure was maintained at 100 Torr using a roll valve 11.
ＤＥＡＩＣＩのキャリア水素は４００ＳＣＣＭとし、全
水素流量を２８ＬＭとした。基板には半絶縁性ＧａＡｓ
（１００）基板、５ｉ（１００）ｎ型基板、および５ｉ
（１００）基板に５ｉ０２を３０００人堆積したものを
用い、成長温度３００°Ｃ１３５００Ｃ１４５０°Ｃに
おいて３０分間成長を行った。The carrier hydrogen of DEAICI was 400 SCCM, and the total hydrogen flow rate was 28 LM. The substrate is semi-insulating GaAs
(100) substrate, 5i (100) n-type substrate, and 5i
Using a (100) substrate with 3,000 deposits of 5i02, growth was performed for 30 minutes at a growth temperature of 300°C, 13500°C, and 1450°C.
４５０°Ｃにおける成長ではＧａＡｓ、 Ｓｉ、３１（
８１０２）基板のいずれにもアルミニウムの堆積がみら
れた。段差計による膜厚測定では、成長層は基板によら
ず約２００ＯＡであった。一方３５０°Ｃで成長を行な
った場合、５１０２をつけた基板上にはアルミニウムの
堆積はみられなかった。ＧａＡｓ、 Ｓｉ上のアルミニ
ウム膜厚は約１ｏｏｏＡであった。また３００°Ｃで成
長したものは、３５０°Ｃの時と同様ＧａＡｓ、 Ｓｉ
基板上にのみアルミニウムが堆積したが、膜厚は５００
人であった。For growth at 450°C, GaAs, Si, 31(
8102) Aluminum deposition was observed on both substrates. The thickness of the grown layer was approximately 200 OA, regardless of the substrate, according to film thickness measurement using a step meter. On the other hand, when growth was performed at 350°C, no aluminum deposition was observed on the substrate with 5102 attached. The aluminum film thickness on GaAs and Si was about 1oooA. Also, those grown at 300°C are similar to those grown at 350°C, such as GaAs and Si.
Aluminum was deposited only on the substrate, but the film thickness was 500 mm.
It was a person.
３５００Ｇで成長した膜を２次イオン質量分析法（ＳＩ
ＭＳ）により分析した結果、アルミニウム膜中のカーボ
ン濃度は０．１％以下であり、カーボン汚染の少ないア
ルミニウム薄膜が得られた。The film grown at 3500G was subjected to secondary ion mass spectrometry (SI
As a result of analysis by MS), the carbon concentration in the aluminum film was 0.1% or less, and an aluminum thin film with little carbon contamination was obtained.
実施例では減圧下での成長例を示したが本成長法におけ
る選択性は基板表面の触媒作用に起因するものであり、
常圧下の成長でも同様の効果が得られる。また同じ理由
から、高周波加熱炉のかわりにホットウォール類を用い
ることもできる。また原料ガスとしてはＤＥＡＩＣＩを
用いたが、これ以外の原料ガス例えばジメチルアルミニ
ウムクロライド、エチルアルミニウムジクロライド、メ
チルアルミニウムジクロライドなどのＡ１塩素結合を持
つ種々有機金属原料を用いることができる。In the example, an example of growth under reduced pressure was shown, but the selectivity in this growth method is due to the catalytic action of the substrate surface.
A similar effect can be obtained by growth under normal pressure. Also, for the same reason, hot walls can be used instead of the high frequency heating furnace. Although DEAICI was used as the raw material gas, various organic metal raw materials having an A1 chlorine bond such as dimethylaluminum chloride, ethylaluminum dichloride, methylaluminum dichloride, etc. can be used.
（発明の効果）
本成長法によれば、カーボン濃度の低いアルミニウム薄
膜を低温で成長させることができ、成長条件により選択
成長も可能となる。このため半導体素子の配線材料など
の用途に適する。(Effects of the Invention) According to this growth method, an aluminum thin film with a low carbon concentration can be grown at a low temperature, and selective growth is also possible depending on the growth conditions. Therefore, it is suitable for applications such as wiring materials for semiconductor devices.
第１図はＡ１基板上にＤＥＡＩＣＩを供給したときに生
成される炭化水素のマススペクトル。
第２図は８１０２基板上にＤＥＡＩＣＩを供給したとき
に生成される炭化水素のマススペクトル。
第３図は本発明にかかる実施例を示す概略図。
Ｉ ＤＥＡＩＣＩ
２ キャリア水素
３ 反応管
４ 流量制御器
５ 恒温槽
６ ヒーター
７ 基板
８ カーボンサセプタ
９ 圧力制御器
１０ ポンプ
１１ コントロールバルブFigure 1 shows the mass spectrum of hydrocarbons produced when DEAICI is supplied onto an A1 substrate. Figure 2 shows the mass spectrum of hydrocarbons produced when DEAICI is supplied onto the 8102 substrate. FIG. 3 is a schematic diagram showing an embodiment according to the present invention. I DEAICI 2 Carrier hydrogen 3 Reaction tube 4 Flow rate controller 5 Constant temperature chamber 6 Heater 7 Substrate 8 Carbon susceptor 9 Pressure controller 10 Pump 11 Control valve
Claims (1)
ウム薄膜を堆積させるアルミニウムの有機金属気相成長
法（ＭＯＣＶＤ）において、分子内にアルミニウムと塩
素原子の結合を１または２つもつ有機金属を原料とする
ことを特徴とするアルミニウム薄膜の堆積方法。 ２）原料有機金属がジエチルアルミニウムクロライドで
あることを特徴とする特許請求の範囲第１項に記載のア
ルミニウム薄膜の堆積方法。[Claims] 1) In metal organic chemical vapor deposition (MOCVD) of aluminum, which deposits an aluminum thin film by thermally decomposing an organic metal containing aluminum, an aluminum compound having one or two bonds between aluminum and chlorine atoms in the molecule A method for depositing an aluminum thin film characterized by using an organic metal as a raw material. 2) The method for depositing an aluminum thin film according to claim 1, wherein the organic metal source is diethylaluminum chloride.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11434388A JPH01283374A (en) | 1988-05-10 | 1988-05-10 | Method for depositing thin aluminum film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11434388A JPH01283374A (en) | 1988-05-10 | 1988-05-10 | Method for depositing thin aluminum film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01283374A true JPH01283374A (en) | 1989-11-14 |
Family
ID=14635393
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11434388A Pending JPH01283374A (en) | 1988-05-10 | 1988-05-10 | Method for depositing thin aluminum film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01283374A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5492734A (en) * | 1991-02-04 | 1996-02-20 | Canon Kabushiki Kaisha | Method of forming deposition film |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5589467A (en) * | 1978-12-27 | 1980-07-07 | Nec Corp | Growth of aluminum in gaseous phase |
| JPS62186528A (en) * | 1986-02-13 | 1987-08-14 | Canon Inc | Deposited film forming method |
| JPH01252776A (en) * | 1988-03-31 | 1989-10-09 | Sony Corp | Formation of aluminum film by vapor growth |
-
1988
- 1988-05-10 JP JP11434388A patent/JPH01283374A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5589467A (en) * | 1978-12-27 | 1980-07-07 | Nec Corp | Growth of aluminum in gaseous phase |
| JPS62186528A (en) * | 1986-02-13 | 1987-08-14 | Canon Inc | Deposited film forming method |
| JPH01252776A (en) * | 1988-03-31 | 1989-10-09 | Sony Corp | Formation of aluminum film by vapor growth |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5492734A (en) * | 1991-02-04 | 1996-02-20 | Canon Kabushiki Kaisha | Method of forming deposition film |
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