JPH01268122A - Electron beam exposure device - Google Patents
Electron beam exposure deviceInfo
- Publication number
- JPH01268122A JPH01268122A JP9776588A JP9776588A JPH01268122A JP H01268122 A JPH01268122 A JP H01268122A JP 9776588 A JP9776588 A JP 9776588A JP 9776588 A JP9776588 A JP 9776588A JP H01268122 A JPH01268122 A JP H01268122A
- Authority
- JP
- Japan
- Prior art keywords
- electron beam
- wafer
- sample stage
- wafers
- beam adjustment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000010894 electron beam technology Methods 0.000 title claims abstract description 34
- 238000001514 detection method Methods 0.000 claims abstract description 15
- 230000001678 irradiating effect Effects 0.000 claims abstract description 5
- 235000012431 wafers Nutrition 0.000 abstract description 53
- 238000012546 transfer Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 238000003780 insertion Methods 0.000 description 6
- 230000037431 insertion Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000001179 sorption measurement Methods 0.000 description 3
- 238000013459 approach Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
Landscapes
- Electron Beam Exposure (AREA)
Abstract
Description
【発明の詳細な説明】
［目次］
概要
産業上の利用分野
従来の技術（第７図）
発明が解決しようとする課題
課題を解決するための手段（第１図）
作用
実施例
一実施例（第２〜６図）
発明の効果
し概要］
電子ビーム露光装置に関し、
同一試料台を用いて各種サイズのウエーノ＼を取り扱う
ことができるようにし、構成を簡単にし、かつ、小型化
することを目的とし、
ウェーハが載置される試料台と、一面にビーム調整用パ
ターンが形成されたビーム調整治具と、−２−：
該試料台に固設され、該ビーム調整治具の該一面を、該
試料台のウェーハ載置面に直交する方向へ微少駆動する
アクチコエータと、該ビーム調整用パターンに照射され
る電子ビームのスポット形状に応じた信号を出力する検
出手段と、試料台に載置されたウェーハ」−のマークに
照射してフォーカス調整された電子ビームを該ビーム調
整用パターンに、照射させ、該検出手段からの信号に基
づき、該パターン面が該電子ビームのフォーカス位置に
なるよう該アクチコエータを制御する制御手段とを備え
て構成する。[Detailed description of the invention] [Table of contents] Overview Industrial field of application Prior art (Figure 7) Problems to be solved by the invention Means for solving the problems (Figure 1) Working examples One example ( Figures 2 to 6) Effects and Summary of the Invention] The purpose of this invention is to simplify the configuration and reduce the size of an electron beam exposure device by making it possible to handle various sizes of wafers using the same sample stage. A sample stage on which a wafer is placed; a beam adjustment jig having a beam adjustment pattern formed on one side; an acticoator that is slightly driven in a direction perpendicular to the wafer mounting surface of the sample stage; a detection means that outputs a signal according to the spot shape of the electron beam irradiated onto the beam adjustment pattern; The beam adjustment pattern is irradiated with an electron beam whose focus has been adjusted by irradiating it onto a mark on the wafer, and the beam adjustment pattern is adjusted so that the pattern surface is at the focus position of the electron beam based on the signal from the detection means. and a control means for controlling the acticoator.
［産業上の利用分野］ 本発明は電子ヒー１、露光装置に関ずろ。[Industrial application field] The present invention relates to an electronic heater 1 and an exposure device.
［従来の技術］
従来の電子ピー１１露光装置ては、第７図に示ず１如く
、開１．Ｊ ］が形成されたホルダ２の下面にウェーハ
３の上面縁部を押接板ばね４．４°で押し当て、このボ
ルダ２の縁部を試料台５に挿入し、固定ピン６．６°に
よりホルダ２を試料台５に固定していた。[Prior Art] A conventional electronic P11 exposure apparatus has an opening 1.1 as shown in FIG. The upper edge of the wafer 3 is pressed against the lower surface of the holder 2 on which the boulder 2 is formed, using a pressing leaf spring of 4.4 degrees, the edge of this boulder 2 is inserted into the sample stage 5, and the fixing pin is held at 6.6 degrees. The holder 2 was fixed to the sample stage 5 by.
このボルダ２には、ビーム調整治具（不図示）か備えら
れており、その」二面がウェーハ３の上面と同一面」−
に位置するよう配置されている。ウェーハ３の厚さは、
直径が同一であってもウェーハ毎にバラツキがあり、一
定ではないか、この配置によりウェーハ３の上面位置は
ビーム調整治具上面に必ず一致する。This boulder 2 is equipped with a beam adjustment jig (not shown), whose two surfaces are flush with the top surface of the wafer 3.
It is located so that it is located at The thickness of wafer 3 is
Even if the diameter is the same, there are variations from wafer to wafer, and it may not be constant, but due to this arrangement, the top surface position of the wafer 3 always coincides with the top surface of the beam adjustment jig.
［発明が解決しようとする課題］
しかし、ウェーハ３の直径に応じた開ｎ Ｉを必要とす
るので、ウェーハ３の直径に応じた各種ホルダ２を備え
ておき、選択的に使用する必要がある。[Problems to be Solved by the Invention] However, since an opening n I corresponding to the diameter of the wafer 3 is required, it is necessary to prepare various holders 2 according to the diameter of the wafer 3 and use them selectively. .
また、試料台５はホルダ２をその外側から保持するので
、装置が大型になる。Furthermore, since the sample stage 5 holds the holder 2 from the outside, the apparatus becomes large.
さらに、押接板ばねの先端部を押し下げ、ホルダ２の下
面と押接板ばね４．４°との間にウェーハ３を挿入した
後、押接板ばね４．４′をウェーハ３に押し当てる機構
が必要であり、しかも、試料台５の幅方向間隔を調整し
、固定ピン６．６゜を下方へ押１．下げ、ホルダ２を試
料台５に挿入した後、押接板ばね６．６′を上方へ付勢
する機構が必要であり、駆動機構が複雑である。Furthermore, after pushing down the tip of the pressing leaf spring and inserting the wafer 3 between the lower surface of the holder 2 and the pressing leaf spring 4.4°, the pressing leaf spring 4.4' is pressed against the wafer 3. In addition, a mechanism is required to adjust the widthwise spacing of the sample stage 5 and push the fixing pin 6.6° downward.1. After the holder 2 is lowered and inserted into the sample stage 5, a mechanism is required to bias the pressing leaf spring 6,6' upward, and the drive mechanism is complicated.
本発明の目的は、上記問題点に鑑み、同一試料台を用い
て各種サイズのウェーハを取り扱うことがてき、しかも
、構成か簡り′Ｌであり小型化できる電子ビーム露光装
置を提供することにある。SUMMARY OF THE INVENTION In view of the above-mentioned problems, an object of the present invention is to provide an electron beam exposure apparatus that can handle wafers of various sizes using the same sample stage, has a simple configuration, and can be miniaturized. be.
［課題を解決するための手段］ 第１図は本発明の原理図である。[Means to solve the problem] FIG. 1 is a diagram showing the principle of the present invention.
図中、１０は試料台であり、各種サイズのウェーハが載
置される。In the figure, 10 is a sample stage, on which wafers of various sizes are placed.
２４（Ｊピー１、Ｊ１九］整治具てあり、一面にビーム
調整用パターンが形成されている。24 (JP1, J19) adjustment tools, and a beam adjustment pattern is formed on one side.
２２はアクヂコエータであり、例えば圧電素子で構成さ
れ、試料台１に固設されており、ビーム調整治具２４の
一面を、試料台１０のウェーハ載置面に直交づ−ろ方向
へ微少駆動する。Reference numeral 22 denotes an aczicoator, which is composed of, for example, a piezoelectric element, is fixed to the sample stage 1, and minutely drives one side of the beam adjustment jig 24 in the direction perpendicular to the wafer mounting surface of the sample stage 10. .
２８は検出手段であり、ビーム調整用パターンニ照射さ
れる電子ビームＥＢのスポット形状に応じた信号を出力
する。A detection means 28 outputs a signal corresponding to the spot shape of the electron beam EB irradiated with the beam adjustment pattern.
４０は制御手段であり、試料台１０に載置されたウェー
ハ上面に対しフォーカス調整された電子ビーム丁ミＢを
該ビーム調整用パターンに照射させ、検出手段２８から
の検出信号に基づき、該パターン面が電子ビームＥＢの
フォーカス位置になるようアクヂコエータ２２を制御す
る。Reference numeral 40 denotes a control means, which irradiates the beam adjustment pattern with an electron beam B whose focus is adjusted on the upper surface of the wafer placed on the sample stage 10, and controls the pattern based on the detection signal from the detection means 28. The actuator 22 is controlled so that the surface is at the focus position of the electron beam EB.
［作用］
ウェーハ３の厚さがウェーハ毎に異なっていてもウェー
ハ３を試料台上に載置することができるので、同一試料
台１０を用いて各種サイズのウェーハ３を取り扱うこと
ができる。[Function] Even if the wafers 3 have different thicknesses, the wafers 3 can be placed on the sample stage, so the same sample stage 10 can be used to handle wafers 3 of various sizes.
このため、ウェーハ３の試料台１０への保持機構及び試
料台１０の保持機構を簡単化できる。Therefore, the mechanism for holding the wafer 3 on the sample stage 10 and the mechanism for holding the sample stage 10 can be simplified.
［実施例］ （１）−実施例 以木 図面に塙づいて本発明の一実施例を説明する。[Example] (1)-Example An embodiment of the present invention will be described with reference to the drawings.
第２図は一実施例構成図であり、電子ビーム露光装置を
示す。第３図は第２図のｌ−ｌＴｌ線断面図である。FIG. 2 is a block diagram of one embodiment, showing an electron beam exposure apparatus. FIG. 3 is a sectional view taken along the line l-lTl in FIG. 2.
試料台１０の」一面は平面になっており、これに各種サ
イズのウェーハ３が載置される。この試料台ＩＯには、
ウェーハ３の載置面にアーム挿入溝１４が刻設されてお
り、ウェーハ３を静電吸着して搬送するウェーハ搬送ア
ーム１６がこのアーム挿入溝１４へ挿入される。アーム
挿入溝Ｉ４の両側の試料台１０−１＝には四部（不図示
）が形成され、この凹部にウェーハ３を吸着固定するた
めの静電吸着板１８．１８′が貼着されており、該板上
面は試料台１０の上面に一致している。One surface of the sample stage 10 is flat, and wafers 3 of various sizes are placed on it. This sample stage IO has
An arm insertion groove 14 is formed on the mounting surface of the wafer 3, and a wafer transfer arm 16 that electrostatically attracts and transfers the wafer 3 is inserted into the arm insertion groove 14. Four parts (not shown) are formed on the sample stage 10-1 on both sides of the arm insertion groove I4, and electrostatic adsorption plates 18 and 18' for adsorbing and fixing the wafer 3 are attached to these recesses. The upper surface of the plate coincides with the upper surface of the sample stage 10.
試料台１０の隅部には矩形の取付穴２０が刻設されてお
り、この取付穴２０の底面にアクチュエータ２２Ａの基
端面が固着されている。このアクチュエータ２２Ａは圧
電素子を電極板（不図示）で挟持した構成であり、電極
板に電圧を印加すると、圧電素子２２Ａの上端面が試料
台１０に垂直な方向へ微小移動する。この移動の最大幅
は例えば１００μｍである。A rectangular attachment hole 20 is cut in the corner of the sample stage 10, and the base end surface of the actuator 22A is fixed to the bottom surface of this attachment hole 20. This actuator 22A has a structure in which a piezoelectric element is sandwiched between electrode plates (not shown), and when a voltage is applied to the electrode plates, the upper end surface of the piezoelectric element 22A moves slightly in a direction perpendicular to the sample stage 10. The maximum width of this movement is, for example, 100 μm.
圧電素子２２Ａの上端面には、ビーム調整治具２４の下
面が固着されている。ビーム調整治具２４の上面は試料
台１０に平行になっており、この上面には基盤の目状等
のビーム調整用パターン（不図示）ガ（形成されている
。The lower surface of the beam adjustment jig 24 is fixed to the upper end surface of the piezoelectric element 22A. The upper surface of the beam adjustment jig 24 is parallel to the sample stage 10, and a beam adjustment pattern (not shown), such as a pattern on a base, is formed on this upper surface.
次に、ビーム調整治具２４の高さ調整装置を第４図に基
づいて説明する。Next, a height adjusting device for the beam adjusting jig 24 will be explained based on FIG. 4.
ここで、ビーム調整治具２４の上面に形成されたパター
ンの一部であるマーク２６に対し、マーク２６を横切る
方向に電子ビームＥＢを偏向させると、ビーム調整治具
２４上に配置された検出器２８Ａ、２８Ｂから、第５図
（Ａ）に示すような波形のイ言号が得られる。すなわち
、電子ビームＥＢのスポットがマーク２６の側面２６ａ
から上面２６ｂ側へ移動すると検出信号が立ち上がり、
上面２−７＝
６ｂｌで検出信号が略−・定になり、」二面２６ｂから
反対側の側面２６ｃへ移動すると検出信号が立ち下がる
。この立ち」二かりまたは立ち下がりの傾きは、電子ビ
ームＥＢの焦点位置がビーム調整治具２４の」二面に近
付くほど急になる。Here, when the electron beam EB is deflected in a direction that crosses the mark 26, which is a part of the pattern formed on the upper surface of the beam adjustment jig 24, the detection A waveform signal as shown in FIG. 5(A) is obtained from the devices 28A and 28B. That is, the spot of the electron beam EB is on the side surface 26a of the mark 26.
When moving from the top surface 26b side, the detection signal rises,
When the upper surface 2-7=6bl, the detection signal becomes approximately constant, and when it moves from the second surface 26b to the opposite side surface 26c, the detection signal falls. The slope of this rise or fall becomes steeper as the focal position of the electron beam EB approaches the second surface of the beam adjustment jig 24.
検出器２８Ａ、２８Ｂの出力信号はアンプ３２へ供給さ
れて増幅され、微分回路３４で微分されて第５図（Ｂ）
に示すようなパルス信号Ｐが出力される。このパルスＰ
は、そのピーク値がピークボールド回路３６で保持され
、次いでＡ／Ｄ変換器３８でデジタル変換されて制御回
路４． ＯＡにより読み込まれる。制御回路４０Ａは例
えばマイクロコンピュータで構成されており、この読込
値の変化に応じてＤ／Ａ変換器４２へ制御データを出力
し、ドライバ４４を介してアクチュエータ２２Δへ制御
電圧を供給する。The output signals of the detectors 28A and 28B are supplied to the amplifier 32, amplified, and differentiated by the differentiating circuit 34, as shown in FIG. 5(B).
A pulse signal P as shown in is output. This pulse P
The peak value of . Read by OA. The control circuit 40A is composed of, for example, a microcomputer, and outputs control data to the D/A converter 42 in response to changes in the read value, and supplies a control voltage to the actuator 22Δ via the driver 44.
次に、この制御回路４． ＯＡの処理手順を第６図に基
づいて説明する。Next, this control circuit 4. The OA processing procedure will be explained based on FIG.
（５０）Ｓ ｍａ＋ｔを０としＥを０とする。(50) S ma+t is set to 0 and E is set to 0.
ここにＳ ｍｎｘはパルスＰのピーク値Ｓの最大値であ
り、ＥはＤ／Ａ変換器４２へ出力する操作電圧である。Here, S mnx is the maximum value of the peak value S of the pulse P, and E is the operating voltage output to the D/A converter 42 .
（５２）次に、電子ビーム制御回路（不図示）からビー
ム偏向の一走査完了信号が供給されるのを待って、
（５４）Ａ ／Ｄ変換器３８からピーク値Ｓを読み込む
。(52) Next, wait for a beam deflection completion signal for one scan to be supplied from the electron beam control circuit (not shown), and (54) read the peak value S from the A/D converter 38.
（５６）Ｓ 、！： Ｓ ｍｇｘとの値を比較し、Ｓ＞
Ｓ、、、、であれば、
（５８）Ｓ ｍ、、をＳの値に等しくし、かつ、操作電
圧ＥをΔＥだけ大きくし、
（６０）Ｄ ／Ａ変換器４２へこの操作電圧Ｅを出力し
て、操作電圧Ｅに比例した電圧をアクチュエータ２２Ａ
へ印加する。この印加電圧はラッチされる。(56)S,! : Compare the value with S mgx, S>
If S, , , then (58) Make S m, , equal to the value of S, and increase the operating voltage E by ΔE, (60) Apply this operating voltage E to the D/A converter 42. Outputs a voltage proportional to the operating voltage E to the actuator 22A.
Apply to. This applied voltage is latched.
次にステップ５２へ戻り、以上の処理を繰り返す。Next, the process returns to step 52 and the above process is repeated.
また、ステップ５６でｓ ＝ ｓ 、、、ａｘと判定さ
れた場合には処理を終了する。Further, if it is determined in step 56 that s = s, . . . ax, the process ends.
ステップ５６でｓ ＜ ｓ ｍａｘと判定された場合に
は、
（６２）操作電圧Ｅの値をΔＥだけ小さくし、（６４）
Ｄ ／Ａ変換器４２へこの操作電圧Ｅを出力して、ピー
ク値ＳがＳ ｍａＸに略一致するようアクチュエータ２
２Δを微調整する。If it is determined in step 56 that s < s max, (62) the value of the operating voltage E is decreased by ΔE, and (64)
The actuator 2 is outputted to the D/A converter 42 so that the peak value S substantially matches Smax.
Finely adjust 2Δ.
次に、」二重の如く構成された本実施例の全体の動作を
説明する。Next, the overall operation of this embodiment, which is configured as a "double" system, will be explained.
第２図において、ウェーハ３が静電吸着されたウェーハ
搬送アーム１６を試料台１０側へ移動させ、ウェーハ搬
送アーム１６をアーム挿入溝１４内に挿入した後、静電
吸着板１８．１８°間に電圧を印加してウェーハ３を試
料台１０上に静電吸着し、ウェーハ搬送アーム１６によ
る静電吸着を解除してアーム挿入溝１４内からウェーハ
搬送アームＩ６を引き出す。In FIG. 2, the wafer transfer arm 16 on which the wafer 3 is electrostatically attracted is moved to the sample stage 10 side, and after the wafer transfer arm 16 is inserted into the arm insertion groove 14, the electrostatic adsorption plate 18.18° is moved. A voltage is applied to electrostatically adsorb the wafer 3 onto the sample stage 10 , the electrostatic adsorption by the wafer transfer arm 16 is released, and the wafer transfer arm I6 is pulled out from within the arm insertion groove 14 .
次に、ウェーハ３の上面中央に形成され位置合わせマー
クに電子ビームＥ Ｂを照射し、」二重フォーカス調整
と同一方法でウェーハ３の上面に対する電子ビームＥＢ
のフォーカス調整を行う。Next, the alignment mark formed at the center of the upper surface of the wafer 3 is irradiated with the electron beam E B, and the electron beam E
Adjust the focus.
次に、試料台１０を移動させ、電子ビームＥＢをビーム
調整治具２４上に照射し、上記ビーム調整治具２４の上
面が電子ビームＥＢのフォーカス位置になるようビーム
調整治具２４の高さ調整を行う。Next, the sample stage 10 is moved to irradiate the beam adjustment jig 24 with the electron beam EB, and the height of the beam adjustment jig 24 is adjusted so that the top surface of the beam adjustment jig 24 is at the focus position of the electron beam EB. Make adjustments.
ウェーハ３の」二面とビーム調整治具２４の−１一面と
の一致精度は２〜３μｍ以下であれば充分であるが、圧
電素子を用いたアクチュエータ２２Δは００２μｍ程度
の精度で伸縮調整を行うことができるので問題がない。It is sufficient that the matching precision between the two surfaces of the wafer 3 and the -1 surface of the beam adjustment jig 24 is 2 to 3 μm or less, but the actuator 22Δ using a piezoelectric element performs expansion and contraction adjustment with an accuracy of about 0.02 μm. There is no problem because it can be done.
「発明の効果」
以」二説明したように、本発明によれば、試料台に載置
されたウェーハ上のマークに照射してフォーカス調整さ
れた電子ビームを、ビーム調整用パターンに照射し、ビ
ーム調整用パターンに照射される電子ビームのスポット
形状に応じた信号を出力する検出手段からの信号に基づ
き、該パターン面が電子ビームのフォーカス位置になる
ように、試料台のウェーハ載置面に直交する方向へビー
ム調整治具をアクチュエータで微少駆動する構成であり
、ウェーハの厚さがウェーハ毎に異なっていてもウェー
ハを試料台」二に載置することができるので、同一試料
台を用いて各種サイズのウェーハを取り扱うことができ
るという優れた効果を奏する。"Effects of the Invention" As described in the following, according to the present invention, an electron beam whose focus has been adjusted by irradiating a mark on a wafer placed on a sample stage is irradiated onto a beam adjustment pattern, Based on the signal from the detection means that outputs a signal corresponding to the spot shape of the electron beam irradiated onto the beam adjustment pattern, the wafer mounting surface of the sample stage is placed so that the pattern surface becomes the focus position of the electron beam. The beam adjustment jig is minutely driven by an actuator in orthogonal directions, and even if the wafer thickness differs from wafer to wafer, the wafers can be placed on the sample stage, so the same sample stage can be used. This has the excellent effect of being able to handle wafers of various sizes.
そのうえ、ウェーハを試料台上に載置することができ、
かつ、同一試料台で各種サイズのウェーハを取り扱うこ
とができるので、ウェーハの試料台への保持機構を簡単
化できるという優れた効果も奏する。Moreover, the wafer can be placed on the sample stage,
In addition, since wafers of various sizes can be handled on the same sample stage, an excellent effect is achieved in that the mechanism for holding the wafer on the sample stage can be simplified.
第１図は本発明の原理図、
第２図は本発明の一実施・例に係る試料台の平面図、
第３図は第２図のＩｎ −ＩＵ線断面図、第４図はビー
ム調整治具の高さ調整装置を示すブロック図、
第５図（Δ）は検出器２８Δ、２８Ｂの出力波形図、同
図（Ｂ）はその微分波形図、
第６図は制御回路４０Δのソフトウェア構成を３：ウェ
ーハ
１０、■０Ａ：試料台
１４：アーム挿入溝
１６：ウェーハ搬送アーム
１８、＋８’ 静電吸着板
２２．２２Ａ、アクチュエータ
２４：ビーム調整治具
２６：マーク
２８Ａ、２８Ｂ・検出器Fig. 1 is a principle diagram of the present invention, Fig. 2 is a plan view of a sample stage according to an embodiment/example of the present invention, Fig. 3 is a sectional view taken along the In-IU line of Fig. 2, and Fig. 4 is beam adjustment. A block diagram showing the jig height adjustment device. Figure 5 (Δ) is the output waveform diagram of the detectors 28Δ and 28B, Figure (B) is its differential waveform diagram, and Figure 6 is the software configuration of the control circuit 40Δ. 3: Wafer 10, ■0A: Sample stage 14: Arm insertion groove 16: Wafer transfer arm 18, +8' Electrostatic chuck plate 22.22A, actuator 24: Beam adjustment jig 26: Marks 28A, 28B, detector
Claims (1)
具（２４）と、 該試料台（１０）に固設され、該ビーム調整治具（２４
）の該一面を、該試料台のウェーハ載置面に直交する方
向へ微少駆動するアクチュエータ（２２）と、該ビーム
調整用パターンに照射される電子ビーム（ＥＢ）のスポ
ット形状に応じた信号を出力する検出手段（２８）と、 該試料台（１０）に載置されたウェーハ上のマークに照
射してフォーカス調整された電子ビーム（ＥＢ）を該ビ
ーム調整用パターンに照射させ、該検出手段（２８）か
らの検出信号に基づき、該パターン面が該電子ビーム（
ＥＢ）のフォーカス位置になるよう該アクチュエータ（
２２）を制御する制御手段（４０）と、を有することを
特徴とする電子ビーム露光装置。[Claims] A sample stage (10) on which a wafer is placed; a beam adjustment jig (24) having a beam adjustment pattern formed on one side; Beam adjustment jig (24
), and an actuator (22) that slightly drives the surface of the sample table in a direction perpendicular to the wafer mounting surface of the sample stage, and a signal that corresponds to the spot shape of the electron beam (EB) irradiated to the beam adjustment pattern. a detection means (28) for outputting an output; and a detection means for irradiating the beam adjustment pattern with an electron beam (EB) whose focus has been adjusted by irradiating a mark on a wafer placed on the sample stage (10); Based on the detection signal from (28), the pattern surface is detected by the electron beam (
Move the actuator (EB) to the focus position (EB).
An electron beam exposure apparatus comprising: a control means (40) for controlling 22).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63097765A JP2642945B2 (en) | 1988-04-20 | 1988-04-20 | Electron beam exposure system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63097765A JP2642945B2 (en) | 1988-04-20 | 1988-04-20 | Electron beam exposure system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01268122A true JPH01268122A (en) | 1989-10-25 |
| JP2642945B2 JP2642945B2 (en) | 1997-08-20 |
Family
ID=14200961
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63097765A Expired - Fee Related JP2642945B2 (en) | 1988-04-20 | 1988-04-20 | Electron beam exposure system |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2642945B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5708276A (en) * | 1995-07-20 | 1998-01-13 | Fujitsu Limited | Electron-beam exposure device and a method of detecting a mark position for the device |
| GB2386468A (en) * | 2001-10-15 | 2003-09-17 | Pioneer Corp | Electron beam apparatus and electrom beam adjusting method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5536990A (en) * | 1979-07-16 | 1980-03-14 | Toshiba Corp | Apparatus for applying electron beam |
| JPS57139924A (en) * | 1981-02-23 | 1982-08-30 | Hitachi Ltd | Drawing device by electron beam |
| JPS6212942U (en) * | 1985-02-19 | 1987-01-26 |
-
1988
- 1988-04-20 JP JP63097765A patent/JP2642945B2/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5536990A (en) * | 1979-07-16 | 1980-03-14 | Toshiba Corp | Apparatus for applying electron beam |
| JPS57139924A (en) * | 1981-02-23 | 1982-08-30 | Hitachi Ltd | Drawing device by electron beam |
| JPS6212942U (en) * | 1985-02-19 | 1987-01-26 |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5708276A (en) * | 1995-07-20 | 1998-01-13 | Fujitsu Limited | Electron-beam exposure device and a method of detecting a mark position for the device |
| GB2386468A (en) * | 2001-10-15 | 2003-09-17 | Pioneer Corp | Electron beam apparatus and electrom beam adjusting method |
| GB2386468B (en) * | 2001-10-15 | 2005-06-29 | Pioneer Corp | Electron beam apparatus and electron beam adjusting method |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2642945B2 (en) | 1997-08-20 |
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