JPH01261469A - Transparent conductive coating film - Google Patents
Transparent conductive coating filmInfo
- Publication number
- JPH01261469A JPH01261469A JP63088845A JP8884588A JPH01261469A JP H01261469 A JPH01261469 A JP H01261469A JP 63088845 A JP63088845 A JP 63088845A JP 8884588 A JP8884588 A JP 8884588A JP H01261469 A JPH01261469 A JP H01261469A
- Authority
- JP
- Japan
- Prior art keywords
- group
- film
- coating
- transparent conductive
- fine particles
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000011248 coating agent Substances 0.000 title abstract description 30
- 238000000576 coating method Methods 0.000 title abstract description 30
- -1 glycidoxy, amino, mercapto, methacryloxy Chemical group 0.000 claims abstract description 14
- 125000003342 alkenyl group Chemical group 0.000 claims abstract description 6
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 6
- 125000003118 aryl group Chemical group 0.000 claims abstract description 5
- 229910052736 halogen Inorganic materials 0.000 claims abstract description 5
- 150000002367 halogens Chemical class 0.000 claims abstract description 5
- 125000001183 hydrocarbyl group Chemical group 0.000 claims abstract description 5
- 125000004093 cyano group Chemical group *C#N 0.000 claims abstract 3
- 239000010419 fine particle Substances 0.000 claims description 22
- 239000006087 Silane Coupling Agent Substances 0.000 claims description 13
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 10
- 229910052799 carbon Inorganic materials 0.000 claims description 10
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical group [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 4
- 125000003700 epoxy group Chemical group 0.000 claims description 4
- 125000003277 amino group Chemical group 0.000 claims description 3
- 125000001424 substituent group Chemical group 0.000 claims description 3
- 125000003396 thiol group Chemical group [H]S* 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 2
- 125000005395 methacrylic acid group Chemical group 0.000 claims 1
- 125000001820 oxy group Chemical group [*:1]O[*:2] 0.000 claims 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract description 14
- 239000000463 material Substances 0.000 abstract description 11
- 239000002245 particle Substances 0.000 abstract description 11
- 150000003961 organosilicon compounds Chemical class 0.000 abstract description 10
- 239000000203 mixture Substances 0.000 abstract description 9
- 238000002156 mixing Methods 0.000 abstract description 2
- 239000004593 Epoxy Substances 0.000 abstract 2
- BLBNEWYCYZMDEK-UHFFFAOYSA-N $l^{1}-indiganyloxyindium Chemical compound [In]O[In] BLBNEWYCYZMDEK-UHFFFAOYSA-N 0.000 abstract 1
- 239000007822 coupling agent Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 description 36
- 238000000034 method Methods 0.000 description 12
- 238000006460 hydrolysis reaction Methods 0.000 description 10
- 239000002904 solvent Substances 0.000 description 10
- 229910001887 tin oxide Inorganic materials 0.000 description 10
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 9
- 230000007062 hydrolysis Effects 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- 239000002585 base Substances 0.000 description 6
- 239000011521 glass Substances 0.000 description 6
- 229910052809 inorganic oxide Inorganic materials 0.000 description 6
- 239000004094 surface-active agent Substances 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 230000000704 physical effect Effects 0.000 description 5
- 238000003756 stirring Methods 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- WRMNZCZEMHIOCP-UHFFFAOYSA-N 2-phenylethanol Chemical compound OCCC1=CC=CC=C1 WRMNZCZEMHIOCP-UHFFFAOYSA-N 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000006185 dispersion Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 125000000524 functional group Chemical group 0.000 description 4
- 229910003437 indium oxide Inorganic materials 0.000 description 4
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 150000004706 metal oxides Chemical class 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- WVDDGKGOMKODPV-UHFFFAOYSA-N Benzyl alcohol Chemical compound OCC1=CC=CC=C1 WVDDGKGOMKODPV-UHFFFAOYSA-N 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 230000002378 acidificating effect Effects 0.000 description 3
- 229910052787 antimony Inorganic materials 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 3
- 229920001296 polysiloxane Polymers 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 2
- 239000003054 catalyst Substances 0.000 description 2
- 239000013522 chelant Chemical class 0.000 description 2
- 238000004040 coloring Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- VDCSZEZNBODVRT-UHFFFAOYSA-N dimethoxy-[3-(oxiran-2-ylmethoxy)propyl]-phenylsilane Chemical compound C=1C=CC=CC=1[Si](OC)(OC)CCCOCC1CO1 VDCSZEZNBODVRT-UHFFFAOYSA-N 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 150000002148 esters Chemical class 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 150000008282 halocarbons Chemical class 0.000 description 2
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 2
- 150000008040 ionic compounds Chemical class 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000012046 mixed solvent Substances 0.000 description 2
- 125000000962 organic group Chemical group 0.000 description 2
- 239000003973 paint Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 description 1
- AHFXIFMCZUNFSI-UHFFFAOYSA-N 2,2-dimethoxyethoxy-methyl-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound COC(CO[SiH](C)CCCOCC1CO1)OC AHFXIFMCZUNFSI-UHFFFAOYSA-N 0.000 description 1
- SOEZZGGTFYTLGU-UHFFFAOYSA-N 2-(7-oxabicyclo[4.1.0]heptan-3-yl)ethyl-(2,2,2-trimethoxyethoxy)silane Chemical compound O1C2CC(CCC21)CC[SiH2]OCC(OC)(OC)OC SOEZZGGTFYTLGU-UHFFFAOYSA-N 0.000 description 1
- ORDZXCQDZLMHAM-UHFFFAOYSA-N 2-(7-oxabicyclo[4.1.0]heptan-4-yl)ethyl-triphenoxysilane Chemical compound C1CC2OC2CC1CC[Si](OC=1C=CC=CC=1)(OC=1C=CC=CC=1)OC1=CC=CC=C1 ORDZXCQDZLMHAM-UHFFFAOYSA-N 0.000 description 1
- ROYZOPPLNMOKCU-UHFFFAOYSA-N 2-(7-oxabicyclo[4.1.0]heptan-4-yl)ethyl-tripropoxysilane Chemical compound C1C(CC[Si](OCCC)(OCCC)OCCC)CCC2OC21 ROYZOPPLNMOKCU-UHFFFAOYSA-N 0.000 description 1
- QCDWFXQBSFUVSP-UHFFFAOYSA-N 2-phenoxyethanol Chemical compound OCCOC1=CC=CC=C1 QCDWFXQBSFUVSP-UHFFFAOYSA-N 0.000 description 1
- GJNHMDMCAAKXHV-UHFFFAOYSA-N 3-(oxiran-2-ylmethoxy)propyl-(2,2,2-trimethoxyethoxy)silane Chemical compound COC(OC)(OC)CO[SiH2]CCCOCC1CO1 GJNHMDMCAAKXHV-UHFFFAOYSA-N 0.000 description 1
- GUXLAULAZDJOEK-UHFFFAOYSA-N 3-(oxiran-2-ylmethoxy)propyl-triphenoxysilane Chemical compound C=1C=CC=CC=1O[Si](OC=1C=CC=CC=1)(OC=1C=CC=CC=1)CCCOCC1CO1 GUXLAULAZDJOEK-UHFFFAOYSA-N 0.000 description 1
- ZYAASQNKCWTPKI-UHFFFAOYSA-N 3-[dimethoxy(methyl)silyl]propan-1-amine Chemical compound CO[Si](C)(OC)CCCN ZYAASQNKCWTPKI-UHFFFAOYSA-N 0.000 description 1
- IKYAJDOSWUATPI-UHFFFAOYSA-N 3-[dimethoxy(methyl)silyl]propane-1-thiol Chemical compound CO[Si](C)(OC)CCCS IKYAJDOSWUATPI-UHFFFAOYSA-N 0.000 description 1
- LZMNXXQIQIHFGC-UHFFFAOYSA-N 3-[dimethoxy(methyl)silyl]propyl 2-methylprop-2-enoate Chemical compound CO[Si](C)(OC)CCCOC(=O)C(C)=C LZMNXXQIQIHFGC-UHFFFAOYSA-N 0.000 description 1
- KSCAZPYHLGGNPZ-UHFFFAOYSA-N 3-chloropropyl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)CCCCl KSCAZPYHLGGNPZ-UHFFFAOYSA-N 0.000 description 1
- OXYZDRAJMHGSMW-UHFFFAOYSA-N 3-chloropropyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)CCCCl OXYZDRAJMHGSMW-UHFFFAOYSA-N 0.000 description 1
- KNTKCYKJRSMRMZ-UHFFFAOYSA-N 3-chloropropyl-dimethoxy-methylsilane Chemical compound CO[Si](C)(OC)CCCCl KNTKCYKJRSMRMZ-UHFFFAOYSA-N 0.000 description 1
- DCQBZYNUSLHVJC-UHFFFAOYSA-N 3-triethoxysilylpropane-1-thiol Chemical compound CCO[Si](OCC)(OCC)CCCS DCQBZYNUSLHVJC-UHFFFAOYSA-N 0.000 description 1
- GBQYMXVQHATSCC-UHFFFAOYSA-N 3-triethoxysilylpropanenitrile Chemical compound CCO[Si](OCC)(OCC)CCC#N GBQYMXVQHATSCC-UHFFFAOYSA-N 0.000 description 1
- SJECZPVISLOESU-UHFFFAOYSA-N 3-trimethoxysilylpropan-1-amine Chemical compound CO[Si](OC)(OC)CCCN SJECZPVISLOESU-UHFFFAOYSA-N 0.000 description 1
- UUEWCQRISZBELL-UHFFFAOYSA-N 3-trimethoxysilylpropane-1-thiol Chemical compound CO[Si](OC)(OC)CCCS UUEWCQRISZBELL-UHFFFAOYSA-N 0.000 description 1
- XDLMVUHYZWKMMD-UHFFFAOYSA-N 3-trimethoxysilylpropyl 2-methylprop-2-enoate Chemical compound CO[Si](OC)(OC)CCCOC(=O)C(C)=C XDLMVUHYZWKMMD-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- OTCOSAMIXUWQOA-UHFFFAOYSA-N COC(OC)(OC)CO[SiH2]C Chemical compound COC(OC)(OC)CO[SiH2]C OTCOSAMIXUWQOA-UHFFFAOYSA-N 0.000 description 1
- 239000005046 Chlorosilane Substances 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229920000877 Melamine resin Polymers 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- 108010009736 Protein Hydrolysates Proteins 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- RQVFGTYFBUVGOP-UHFFFAOYSA-N [acetyloxy(dimethyl)silyl] acetate Chemical compound CC(=O)O[Si](C)(C)OC(C)=O RQVFGTYFBUVGOP-UHFFFAOYSA-N 0.000 description 1
- YDVQLGHYJSJBKA-UHFFFAOYSA-N [diacetyloxy(3-chloropropyl)silyl] acetate Chemical compound CC(=O)O[Si](OC(C)=O)(OC(C)=O)CCCCl YDVQLGHYJSJBKA-UHFFFAOYSA-N 0.000 description 1
- NOZAQBYNLKNDRT-UHFFFAOYSA-N [diacetyloxy(ethenyl)silyl] acetate Chemical compound CC(=O)O[Si](OC(C)=O)(OC(C)=O)C=C NOZAQBYNLKNDRT-UHFFFAOYSA-N 0.000 description 1
- TVJPBVNWVPUZBM-UHFFFAOYSA-N [diacetyloxy(methyl)silyl] acetate Chemical compound CC(=O)O[Si](C)(OC(C)=O)OC(C)=O TVJPBVNWVPUZBM-UHFFFAOYSA-N 0.000 description 1
- VLFKGWCMFMCFRM-UHFFFAOYSA-N [diacetyloxy(phenyl)silyl] acetate Chemical compound CC(=O)O[Si](OC(C)=O)(OC(C)=O)C1=CC=CC=C1 VLFKGWCMFMCFRM-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 230000032900 absorption of visible light Effects 0.000 description 1
- BTHCBXJLLCHNMS-UHFFFAOYSA-N acetyloxysilicon Chemical compound CC(=O)O[Si] BTHCBXJLLCHNMS-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000004703 alkoxides Chemical class 0.000 description 1
- 150000001449 anionic compounds Chemical class 0.000 description 1
- 229910000410 antimony oxide Inorganic materials 0.000 description 1
- LJCFOYOSGPHIOO-UHFFFAOYSA-N antimony pentoxide Chemical compound O=[Sb](=O)O[Sb](=O)=O LJCFOYOSGPHIOO-UHFFFAOYSA-N 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 235000019445 benzyl alcohol Nutrition 0.000 description 1
- QHIWVLPBUQWDMQ-UHFFFAOYSA-N butyl prop-2-enoate;methyl 2-methylprop-2-enoate;prop-2-enoic acid Chemical compound OC(=O)C=C.COC(=O)C(C)=C.CCCCOC(=O)C=C QHIWVLPBUQWDMQ-UHFFFAOYSA-N 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 150000001767 cationic compounds Chemical class 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- ZDOBWJOCPDIBRZ-UHFFFAOYSA-N chloromethyl(triethoxy)silane Chemical compound CCO[Si](CCl)(OCC)OCC ZDOBWJOCPDIBRZ-UHFFFAOYSA-N 0.000 description 1
- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical class Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 1
- 239000008199 coating composition Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- JIOUJECYOVQAMA-UHFFFAOYSA-N dibutoxy-methyl-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CCCCO[Si](C)(OCCCC)CCCOCC1CO1 JIOUJECYOVQAMA-UHFFFAOYSA-N 0.000 description 1
- GENZKBJGWAAVIE-UHFFFAOYSA-N diethoxy-[3-(oxiran-2-ylmethoxy)propyl]-phenylsilane Chemical compound C=1C=CC=CC=1[Si](OCC)(OCC)CCCOCC1CO1 GENZKBJGWAAVIE-UHFFFAOYSA-N 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- JJQZDUKDJDQPMQ-UHFFFAOYSA-N dimethoxy(dimethyl)silane Chemical compound CO[Si](C)(C)OC JJQZDUKDJDQPMQ-UHFFFAOYSA-N 0.000 description 1
- FQPPMINVIMPSDP-UHFFFAOYSA-N dimethoxy-[5-(oxiran-2-ylmethoxy)pent-1-enyl]silane Chemical compound C(C1CO1)OCCCC=C[SiH](OC)OC FQPPMINVIMPSDP-UHFFFAOYSA-N 0.000 description 1
- CAEPKDWOZATEMI-UHFFFAOYSA-N dimethoxy-methyl-(oxiran-2-ylmethoxymethyl)silane Chemical compound CO[Si](C)(OC)COCC1CO1 CAEPKDWOZATEMI-UHFFFAOYSA-N 0.000 description 1
- RLFWUGYBCZFNMQ-UHFFFAOYSA-N dimethoxy-methyl-[1-(oxiran-2-ylmethoxy)ethyl]silane Chemical compound CO[Si](C)(OC)C(C)OCC1CO1 RLFWUGYBCZFNMQ-UHFFFAOYSA-N 0.000 description 1
- KQODNYDIZIFQGO-UHFFFAOYSA-N dimethoxy-methyl-[1-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](C)(OC)C(CC)OCC1CO1 KQODNYDIZIFQGO-UHFFFAOYSA-N 0.000 description 1
- PWPGWRIGYKWLEV-UHFFFAOYSA-N dimethoxy-methyl-[2-(oxiran-2-ylmethoxy)ethyl]silane Chemical compound CO[Si](C)(OC)CCOCC1CO1 PWPGWRIGYKWLEV-UHFFFAOYSA-N 0.000 description 1
- SYPWIQUCQXCZCF-UHFFFAOYSA-N dimethoxy-methyl-[2-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](C)(OC)CC(C)OCC1CO1 SYPWIQUCQXCZCF-UHFFFAOYSA-N 0.000 description 1
- CVQVSVBUMVSJES-UHFFFAOYSA-N dimethoxy-methyl-phenylsilane Chemical compound CO[Si](C)(OC)C1=CC=CC=C1 CVQVSVBUMVSJES-UHFFFAOYSA-N 0.000 description 1
- YQGOWXYZDLJBFL-UHFFFAOYSA-N dimethoxysilane Chemical compound CO[SiH2]OC YQGOWXYZDLJBFL-UHFFFAOYSA-N 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- USIUVYZYUHIAEV-UHFFFAOYSA-N diphenyl ether Chemical compound C=1C=CC=CC=1OC1=CC=CC=C1 USIUVYZYUHIAEV-UHFFFAOYSA-N 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- GYLXWHLPLTVIOP-UHFFFAOYSA-N ethenyl(2,2,2-trimethoxyethoxy)silane Chemical compound COC(OC)(OC)CO[SiH2]C=C GYLXWHLPLTVIOP-UHFFFAOYSA-N 0.000 description 1
- FWDBOZPQNFPOLF-UHFFFAOYSA-N ethenyl(triethoxy)silane Chemical compound CCO[Si](OCC)(OCC)C=C FWDBOZPQNFPOLF-UHFFFAOYSA-N 0.000 description 1
- NKSJNEHGWDZZQF-UHFFFAOYSA-N ethenyl(trimethoxy)silane Chemical compound CO[Si](OC)(OC)C=C NKSJNEHGWDZZQF-UHFFFAOYSA-N 0.000 description 1
- ZLNAFSPCNATQPQ-UHFFFAOYSA-N ethenyl-dimethoxy-methylsilane Chemical compound CO[Si](C)(OC)C=C ZLNAFSPCNATQPQ-UHFFFAOYSA-N 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- SBRXLTRZCJVAPH-UHFFFAOYSA-N ethyl(trimethoxy)silane Chemical compound CC[Si](OC)(OC)OC SBRXLTRZCJVAPH-UHFFFAOYSA-N 0.000 description 1
- LHZAHEHJUSMWPJ-UHFFFAOYSA-N ethyl-[3-(oxiran-2-ylmethoxy)propyl]-diphenoxysilane Chemical compound C=1C=CC=CC=1O[Si](OC=1C=CC=CC=1)(CC)CCCOCC1CO1 LHZAHEHJUSMWPJ-UHFFFAOYSA-N 0.000 description 1
- YYDBOMXUCPLLSK-UHFFFAOYSA-N ethyl-dimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CC[Si](OC)(OC)CCCOCC1CO1 YYDBOMXUCPLLSK-UHFFFAOYSA-N 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 150000007529 inorganic bases Chemical class 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 1
- POPACFLNWGUDSR-UHFFFAOYSA-N methoxy(trimethyl)silane Chemical compound CO[Si](C)(C)C POPACFLNWGUDSR-UHFFFAOYSA-N 0.000 description 1
- DRXHEPWCWBIQFJ-UHFFFAOYSA-N methyl(triphenoxy)silane Chemical compound C=1C=CC=CC=1O[Si](OC=1C=CC=CC=1)(C)OC1=CC=CC=C1 DRXHEPWCWBIQFJ-UHFFFAOYSA-N 0.000 description 1
- BFXIKLCIZHOAAZ-UHFFFAOYSA-N methyltrimethoxysilane Chemical compound CO[Si](C)(OC)OC BFXIKLCIZHOAAZ-UHFFFAOYSA-N 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- WVDDGKGOMKODPV-ZQBYOMGUSA-N phenyl(114C)methanol Chemical compound O[14CH2]C1=CC=CC=C1 WVDDGKGOMKODPV-ZQBYOMGUSA-N 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 239000011164 primary particle Substances 0.000 description 1
- LFXRQWIAJWOJNE-UHFFFAOYSA-N prop-1-en-2-ylsilane Chemical class CC([SiH3])=C LFXRQWIAJWOJNE-UHFFFAOYSA-N 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000011163 secondary particle Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000004071 soot Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 1
- ZQZCOBSUOFHDEE-UHFFFAOYSA-N tetrapropyl silicate Chemical compound CCCO[Si](OCCC)(OCCC)OCCC ZQZCOBSUOFHDEE-UHFFFAOYSA-N 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- GYZQBXUDWTVJDF-UHFFFAOYSA-N tributoxy(methyl)silane Chemical compound CCCCO[Si](C)(OCCCC)OCCCC GYZQBXUDWTVJDF-UHFFFAOYSA-N 0.000 description 1
- OAVPBWLGJVKEGZ-UHFFFAOYSA-N tributoxy-[2-(7-oxabicyclo[4.1.0]heptan-4-yl)ethyl]silane Chemical compound C1C(CC[Si](OCCCC)(OCCCC)OCCCC)CCC2OC21 OAVPBWLGJVKEGZ-UHFFFAOYSA-N 0.000 description 1
- FQYWWLSIKWDAEC-UHFFFAOYSA-N tributoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CCCCO[Si](OCCCC)(OCCCC)CCCOCC1CO1 FQYWWLSIKWDAEC-UHFFFAOYSA-N 0.000 description 1
- VQFQVYFUZUTIMU-UHFFFAOYSA-N triethoxy(7-oxabicyclo[4.1.0]heptan-4-ylmethyl)silane Chemical compound C1C(C[Si](OCC)(OCC)OCC)CCC2OC21 VQFQVYFUZUTIMU-UHFFFAOYSA-N 0.000 description 1
- DENFJSAFJTVPJR-UHFFFAOYSA-N triethoxy(ethyl)silane Chemical compound CCO[Si](CC)(OCC)OCC DENFJSAFJTVPJR-UHFFFAOYSA-N 0.000 description 1
- CPUDPFPXCZDNGI-UHFFFAOYSA-N triethoxy(methyl)silane Chemical compound CCO[Si](C)(OCC)OCC CPUDPFPXCZDNGI-UHFFFAOYSA-N 0.000 description 1
- UNKMHLWJZHLPPM-UHFFFAOYSA-N triethoxy(oxiran-2-ylmethoxymethyl)silane Chemical compound CCO[Si](OCC)(OCC)COCC1CO1 UNKMHLWJZHLPPM-UHFFFAOYSA-N 0.000 description 1
- JCVQKRGIASEUKR-UHFFFAOYSA-N triethoxy(phenyl)silane Chemical compound CCO[Si](OCC)(OCC)C1=CC=CC=C1 JCVQKRGIASEUKR-UHFFFAOYSA-N 0.000 description 1
- OHKFEBYBHZXHMM-UHFFFAOYSA-N triethoxy-[1-(oxiran-2-ylmethoxy)butyl]silane Chemical compound CCO[Si](OCC)(OCC)C(CCC)OCC1CO1 OHKFEBYBHZXHMM-UHFFFAOYSA-N 0.000 description 1
- SJQPASOTJGFOMU-UHFFFAOYSA-N triethoxy-[1-(oxiran-2-ylmethoxy)ethyl]silane Chemical compound CCO[Si](OCC)(OCC)C(C)OCC1CO1 SJQPASOTJGFOMU-UHFFFAOYSA-N 0.000 description 1
- WELKPNZFCHECET-UHFFFAOYSA-N triethoxy-[2-(7-oxabicyclo[4.1.0]heptan-4-yl)butyl]silane Chemical compound C1C(C(CC)C[Si](OCC)(OCC)OCC)CCC2OC21 WELKPNZFCHECET-UHFFFAOYSA-N 0.000 description 1
- UDUKMRHNZZLJRB-UHFFFAOYSA-N triethoxy-[2-(7-oxabicyclo[4.1.0]heptan-4-yl)ethyl]silane Chemical compound C1C(CC[Si](OCC)(OCC)OCC)CCC2OC21 UDUKMRHNZZLJRB-UHFFFAOYSA-N 0.000 description 1
- FVMMYGUCXRZVPJ-UHFFFAOYSA-N triethoxy-[2-(oxiran-2-ylmethoxy)butyl]silane Chemical compound CCO[Si](OCC)(OCC)CC(CC)OCC1CO1 FVMMYGUCXRZVPJ-UHFFFAOYSA-N 0.000 description 1
- RWJUTPORTOUFDY-UHFFFAOYSA-N triethoxy-[2-(oxiran-2-ylmethoxy)ethyl]silane Chemical compound CCO[Si](OCC)(OCC)CCOCC1CO1 RWJUTPORTOUFDY-UHFFFAOYSA-N 0.000 description 1
- CFUDQABJYSJIQY-UHFFFAOYSA-N triethoxy-[2-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CCO[Si](OCC)(OCC)CC(C)OCC1CO1 CFUDQABJYSJIQY-UHFFFAOYSA-N 0.000 description 1
- NLKPPXKQMJDBFO-UHFFFAOYSA-N triethoxy-[3-(7-oxabicyclo[4.1.0]heptan-4-yl)propyl]silane Chemical compound C1C(CCC[Si](OCC)(OCC)OCC)CCC2OC21 NLKPPXKQMJDBFO-UHFFFAOYSA-N 0.000 description 1
- KPNCYSTUWLXFOE-UHFFFAOYSA-N triethoxy-[3-(oxiran-2-ylmethoxy)butyl]silane Chemical compound CCO[Si](OCC)(OCC)CCC(C)OCC1CO1 KPNCYSTUWLXFOE-UHFFFAOYSA-N 0.000 description 1
- JXUKBNICSRJFAP-UHFFFAOYSA-N triethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CCO[Si](OCC)(OCC)CCCOCC1CO1 JXUKBNICSRJFAP-UHFFFAOYSA-N 0.000 description 1
- GSUGNQKJVLXBHC-UHFFFAOYSA-N triethoxy-[4-(oxiran-2-ylmethoxy)butyl]silane Chemical compound CCO[Si](OCC)(OCC)CCCCOCC1CO1 GSUGNQKJVLXBHC-UHFFFAOYSA-N 0.000 description 1
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 description 1
- HGCVEHIYVPDFMS-UHFFFAOYSA-N trimethoxy(7-oxabicyclo[4.1.0]heptan-4-ylmethyl)silane Chemical compound C1C(C[Si](OC)(OC)OC)CCC2OC21 HGCVEHIYVPDFMS-UHFFFAOYSA-N 0.000 description 1
- ZNOCGWVLWPVKAO-UHFFFAOYSA-N trimethoxy(phenyl)silane Chemical compound CO[Si](OC)(OC)C1=CC=CC=C1 ZNOCGWVLWPVKAO-UHFFFAOYSA-N 0.000 description 1
- HQYALQRYBUJWDH-UHFFFAOYSA-N trimethoxy(propyl)silane Chemical compound CCC[Si](OC)(OC)OC HQYALQRYBUJWDH-UHFFFAOYSA-N 0.000 description 1
- FFJVMNHOSKMOSA-UHFFFAOYSA-N trimethoxy-[1-(oxiran-2-ylmethoxy)butyl]silane Chemical compound CCCC([Si](OC)(OC)OC)OCC1CO1 FFJVMNHOSKMOSA-UHFFFAOYSA-N 0.000 description 1
- DAVVOFDYOGMLNQ-UHFFFAOYSA-N trimethoxy-[1-(oxiran-2-ylmethoxy)ethyl]silane Chemical compound CO[Si](OC)(OC)C(C)OCC1CO1 DAVVOFDYOGMLNQ-UHFFFAOYSA-N 0.000 description 1
- FNBIAJGPJUOAPB-UHFFFAOYSA-N trimethoxy-[1-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)C(CC)OCC1CO1 FNBIAJGPJUOAPB-UHFFFAOYSA-N 0.000 description 1
- FUOJHAOOUZGVPZ-UHFFFAOYSA-N trimethoxy-[2-(7-oxabicyclo[4.1.0]heptan-4-yl)butyl]silane Chemical compound C1C(C(C[Si](OC)(OC)OC)CC)CCC2OC21 FUOJHAOOUZGVPZ-UHFFFAOYSA-N 0.000 description 1
- DQZNLOXENNXVAD-UHFFFAOYSA-N trimethoxy-[2-(7-oxabicyclo[4.1.0]heptan-4-yl)ethyl]silane Chemical compound C1C(CC[Si](OC)(OC)OC)CCC2OC21 DQZNLOXENNXVAD-UHFFFAOYSA-N 0.000 description 1
- KKFKPRKYSBTUDV-UHFFFAOYSA-N trimethoxy-[2-(oxiran-2-ylmethoxy)butyl]silane Chemical compound CO[Si](OC)(OC)CC(CC)OCC1CO1 KKFKPRKYSBTUDV-UHFFFAOYSA-N 0.000 description 1
- ZNXDCSVNCSSUNB-UHFFFAOYSA-N trimethoxy-[2-(oxiran-2-ylmethoxy)ethyl]silane Chemical compound CO[Si](OC)(OC)CCOCC1CO1 ZNXDCSVNCSSUNB-UHFFFAOYSA-N 0.000 description 1
- HTVULPNMIHOVRU-UHFFFAOYSA-N trimethoxy-[2-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CC(C)OCC1CO1 HTVULPNMIHOVRU-UHFFFAOYSA-N 0.000 description 1
- ZQPNGHDNBNMPON-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)butyl]silane Chemical compound CO[Si](OC)(OC)CCC(C)OCC1CO1 ZQPNGHDNBNMPON-UHFFFAOYSA-N 0.000 description 1
- GUKYSRVOOIKHHB-UHFFFAOYSA-N trimethoxy-[4-(oxiran-2-ylmethoxy)butyl]silane Chemical compound CO[Si](OC)(OC)CCCCOCC1CO1 GUKYSRVOOIKHHB-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
Landscapes
- Compositions Of Macromolecular Compounds (AREA)
- Pigments, Carbon Blacks, Or Wood Stains (AREA)
- Paints Or Removers (AREA)
- Conductive Materials (AREA)
- Non-Insulated Conductors (AREA)
Abstract
Description
【発明の詳細な説明】
[産業上の利用分野]
本発明は表面硬度に優れた導電性、帯電防止性を有する
透明被膜に関するものである。とくに被膜の厚みを厚く
することが可能なことから耐久性に優れた透明導電性被
膜に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a transparent coating having excellent surface hardness, electrical conductivity, and antistatic properties. In particular, the present invention relates to a transparent conductive film that has excellent durability since it is possible to increase the thickness of the film.
[従来の技術]
透明導電性被膜としては、金、銀、アルミニウムなどの
金属薄膜、さらには酸化スズ、アンチモンドープの酸化
スズ、あるいは酸化インジウムと酸化スズの複合酸化物
(ITOと略す)がもっともよく知られている。一方、
帯電防止性被膜としては前記導電性被膜以外にカチオン
性あるいはアニオン性などの各種イオン性化合物を使用
したものが知られている。[Prior Art] The most suitable transparent conductive coatings are metal thin films such as gold, silver, and aluminum, as well as tin oxide, antimony-doped tin oxide, and a composite oxide of indium oxide and tin oxide (abbreviated as ITO). well known. on the other hand,
Antistatic coatings that use various ionic compounds such as cationic or anionic compounds in addition to the above-mentioned conductive coatings are known.
[発明が解決しようとする課題]
金、銀、アルミニウムなどの金属薄膜からなる透明導電
性被膜は硬度が低い、可視光を吸収するなどの欠点があ
る。また、酸化スズ、ITOなどからなる被膜は通常ス
パッタリング、熱CVD、真空蒸着などの方法によって
形成されるため、厚膜化に際しては非常に生産性が悪く
、コスト的に非現実的なものである。すなわち、金属薄
膜および金属酸化物薄膜からなる透明導電膜はいずれも
非常に薄い膜であるため、少し硬い材質のものと衝突し
たり、摩耗されたりすると傷が入り、導電膜を断線させ
るという大きな欠点がある。[Problems to be Solved by the Invention] Transparent conductive coatings made of thin metal films such as gold, silver, and aluminum have drawbacks such as low hardness and absorption of visible light. Furthermore, films made of tin oxide, ITO, etc. are usually formed by methods such as sputtering, thermal CVD, and vacuum evaporation, which makes it extremely difficult to produce thick films and is unrealistic in terms of cost. . In other words, since transparent conductive films made of metal thin films and metal oxide thin films are both very thin films, if they collide with something made of a slightly harder material or are abraded, they will be scratched and cause serious damage such as disconnection of the conductive film. There are drawbacks.
一方、イオン性化合物を用いた帯電防止性被膜は湿度な
どの環境変化によってその帯電防止性能が大きく左右さ
れ、とくに低湿度時にはその機能を発揮しないなどの欠
点がある。On the other hand, antistatic coatings using ionic compounds have the disadvantage that their antistatic performance is greatly affected by environmental changes such as humidity, and that they do not exhibit their function particularly at low humidity.
本発明は、表面硬度が高く耐久性に優れ、低湿度時にも
性能低下のみられない透明導電性被膜を提供することを
目的とする。An object of the present invention is to provide a transparent conductive film that has high surface hardness, excellent durability, and exhibits no deterioration in performance even at low humidity.
[課題を解決するための手段]
本発明は、前記目的を達成するために下記の構成を有す
る。[Means for Solving the Problems] The present invention has the following configuration to achieve the above object.
[炭素含有シランカップリング剤で表面処理された導電
性微粒子とビヒクルとを主成分としてなることを特徴と
する透明導電性被膜。」
本発明において透明導電性被膜が設けられる基材は本発
明を必要とするものであれば何ら限定されるものではな
いが、本発明によって得られる被膜が透明性を有する点
から基材としても透明性を有する基材への適用が好まし
い。また、基材の材S丁としては無機ガラスであっても
、有機プラスチックであっても何ら問題はない。さらに
は基材の形状としては平板状、わん曲状、円形状などと
くに限定されない。また、基材の表面の全面あるいはそ
の一部にあらかじめ金属薄膜やITO,酸化スズなどの
金属酸化物薄膜などからなる透明導電膜を設けてなるも
のも手書き入力装置などの用途を目的としたものには好
ましい。[A transparent conductive film characterized by being mainly composed of conductive fine particles surface-treated with a carbon-containing silane coupling agent and a vehicle. ” In the present invention, the substrate on which the transparent conductive coating is provided is not limited in any way as long as it requires the present invention, but since the coating obtained by the present invention is transparent, it may also be used as a substrate. Application to transparent substrates is preferred. Further, there is no problem whether the base material S is inorganic glass or organic plastic. Further, the shape of the base material is not particularly limited, such as a flat plate, a curved shape, or a circular shape. In addition, products in which a transparent conductive film made of a thin metal film or a thin film of a metal oxide such as ITO or tin oxide is provided on the entire surface or a part of the surface of the base material are also intended for applications such as handwriting input devices. preferred.
つぎに本発明における導電性微粒子とは被膜にした時に
十分な透明性を与え、かつ導電性を付与するものであれ
ば、とくに限定されるものではないが、高い導電性と透
明性の両者を満足さぜやずいという点から酸化スズ(ア
ンチモンドーピング物を含む)、酸化インジウム/酸化
スズ混合物などがその好ましい例として挙げられる。さ
らにかかる導電性微粒子の平均粒子径としては上述の目
的が達せられるものであればよいが、とくに分散状態を
安定化し、均一被膜を得ることが容易であるという点か
ら10オングストロームから5μmの一次粒子径を有す
るものが好ましい。ここで、−次粒子径とは、何らかの
分散方法によって実質的に分散可能な粒子径を意味する
ものである。また、かかる導電性微粒子は、目的とする
被膜の導電性と透明性によっても異なるが、通常は30
〜90重量%が被膜中に含まれていることが好ましい。Next, the conductive fine particles in the present invention are not particularly limited as long as they can provide sufficient transparency and conductivity when formed into a film, but they can have both high conductivity and transparency. Preferred examples include tin oxide (including antimony doped materials) and indium oxide/tin oxide mixtures from the viewpoint of satisfactory freshness. Furthermore, the average particle diameter of such conductive fine particles may be any size as long as it can achieve the above-mentioned purpose, but in particular, from the viewpoint of stabilizing the dispersion state and easily obtaining a uniform coating, primary particles of 10 angstroms to 5 μm are preferred. It is preferable to have a diameter. Here, the secondary particle size means a particle size that can be substantially dispersed by some dispersion method. In addition, such conductive fine particles usually have a 30%
Preferably, 90% by weight is contained in the coating.
すなわち、30重足%より少ないと十分な導電性が得ら
れず、また90重量%より多くなると透明性などの外観
、さらには基材との接着性などが低下する傾向にある。That is, if it is less than 30% by weight, sufficient conductivity cannot be obtained, and if it is more than 90% by weight, appearance such as transparency, and even adhesiveness with the base material, etc. tend to deteriorate.
本発明において使用される導電性微粒子は、炭素含有シ
ランカップリング剤でその微粒子表面が処理されている
ことが必要である。すなわち、シランカップリング剤で
処理することにより導電性微粒子の分散性が良好となり
、表面硬度が向上するわけである。処理された微粒子の
状態としては、微粒子表面が化学的にシランカップリン
グ剤で結合された状態で覆われていることが処理の安定
性、処理の効果が大きいなどの点から好ましい。また、
シランカップリング剤によって得られる被膜で覆われて
いてもよい。The surface of the conductive fine particles used in the present invention must be treated with a carbon-containing silane coupling agent. That is, treatment with a silane coupling agent improves the dispersibility of the conductive fine particles and improves the surface hardness. As for the state of the treated fine particles, it is preferable that the surface of the fine particles be covered with a chemically bonded state of a silane coupling agent, from the viewpoint of stability of the treatment and a large effect of the treatment. Also,
It may be covered with a film obtained by a silane coupling agent.
また、かかる炭素含有シランカップリング剤とは、少な
くとも−S+−C−結合によって炭素含有有機基を有す
るものであり、これらの導電性微粒子に対する処理量と
しては、微粒子の粒径、ビヒクルとの相性などによって
決定されるべきであるが、処理効果、とくに被膜の表面
硬度向上効果を発現させるなめには導電性微粒子100
重量部に対して、0.01重量部以上であることが好ま
しく、さらには0,05重量部以上であることが好まし
い。また、導電性保持の観点からは導電性微粒子100
重量部に対して、5.00重量部以下、さらには3重量
部以下であることが好ましい。In addition, such a carbon-containing silane coupling agent has at least a carbon-containing organic group through a -S+-C- bond, and the amount of treatment for these conductive fine particles depends on the particle size of the fine particles and compatibility with the vehicle. The conductive fine particles should be determined by
It is preferably 0.01 part by weight or more, more preferably 0.05 part by weight or more. In addition, from the viewpoint of maintaining conductivity, conductive fine particles 100
It is preferably 5.00 parts by weight or less, more preferably 3 parts by weight or less.
かかる炭素含有シランカップリング剤によって処理され
た被処理導電性微粒子としては、処理の安定性、処理の
容易さなどの点から、かかるシランカップリング剤が、
被処理導電性微粒子の表面に下記一般式(A>で示され
る官能基として存在していることが好ましい。The conductive fine particles treated with such a carbon-containing silane coupling agent include, from the viewpoint of treatment stability and ease of treatment, such a silane coupling agent.
It is preferable that the functional group is present on the surface of the conductive fine particles to be treated as a functional group represented by the following general formula (A>).
RIR2R3b Si 0(3−a−b)
(A)(式中R1、R2、R3は各々、水素、アルキル
基、アルケニル基、アリール基、またはハロゲン、エポ
キシ基、グリシドキシ基、アミノ基、メルカプト基、メ
タクリルオキシ基およびシアン基から選ばれる少なくと
も1つの置換基を有する炭化水素基であり、aおよびb
は、0まなは1である。)シランカップリング剤処理の
方法としては、各種の方法が適用可能である。とくに一
般式(A>の官能基を生成することが可能な有機ケイ素
化合物、たとえば一般式(A)相当の置換基を有するア
ルコキシシラン、中でもメトキシ、工1−キシなどの低
級アルコキシシラン、アセトキシシランなどのアシルオ
キシシラン、クロルシランなとのハロゲノシラン、シラ
ザン化合物、ケトオキシムシラン、イソプロペニルシラ
ンなどの加水分解可能な官能基を有する有機ケイ素化合
物を気相状態、または無溶媒、あるいは各種溶媒中での
液相状態で処理し、処理中および/または処理後に加水
分解反応を起こさせて表面処理することが簡便で、かつ
均一な処理が可能なことから、最も好ましい。RIR2R3b Si 0(3-a-b)
(A) (wherein R1, R2, and R3 are each at least one selected from hydrogen, an alkyl group, an alkenyl group, an aryl group, or a halogen, an epoxy group, a glycidoxy group, an amino group, a mercapto group, a methacryloxy group, and a cyan group) A hydrocarbon group having one substituent, a and b
is 0 is 1. ) Various methods can be applied to the silane coupling agent treatment. In particular, organosilicon compounds capable of producing a functional group of general formula (A>), such as alkoxysilanes having a substituent corresponding to general formula (A), especially lower alkoxysilanes such as methoxy and 1-oxy, and acetoxysilane. Organosilicon compounds having hydrolyzable functional groups such as acyloxysilanes, chlorosilanes, halogenosilanes, silazane compounds, ketoximesilanes, and isopropenylsilanes are prepared in a gas phase, without a solvent, or in various solvents. It is most preferable to treat the surface in a liquid phase and cause a hydrolysis reaction during and/or after the treatment because it is simple and allows uniform treatment.
なお、処理に際しては加熱などを行なって高温下に処理
することも効果的である。Note that during the treatment, it is also effective to perform the treatment at a high temperature by heating or the like.
本発明は、前述の炭素含有シランカップリング剤で表面
処理された導電性微粒子を各種ビヒクル中に含有させて
被膜化されるものであるが、ここでビヒクルとは導電性
微粒子を分散可能ならしめるものであれば何でもよいが
、一般に導電性微粒子がシランカップリング剤処理され
た無機物であり、とくにその無機酸化物であることから
、これらと親和性が良く、また高硬度を与え得るものと
して下記一般式(B)で表される有機ケイ素化合物およ
び/またはその加水分解物が好ましく用いられる。In the present invention, conductive fine particles surface-treated with the above-mentioned carbon-containing silane coupling agent are contained in various vehicles to form a film. Any material may be used, but since the conductive fine particles are generally inorganic substances treated with a silane coupling agent, and in particular their inorganic oxides, the following substances have a good affinity with these particles and can provide high hardness. An organosilicon compound represented by general formula (B) and/or a hydrolyzate thereof are preferably used.
R4c R” dS 1(X) 4−C−d (B
)(式中R4、R5は各々アルキル基、アルケニル基
、アリール基、またはハロゲン、エポキシ基、グリシド
キシ基、アミノ基、メルカプト基、メタクリルオキシ基
あるいはシアン基を有する炭化水素基、Xは加水分解性
基であり、CおよびdはOまたは1である)
かかる一般式(B)で示される有機ケイ素化合物および
/またはその加水分解物の具体的な代表例としては、メ
チルシリケート、エチルシリケート、n−プロピルシリ
ケート、i−プロピルシリケート、0−ブチルシリケー
ト、5ec−ブチルシリケートおよびt−ブチルシリケ
ートなどのテトラアルコキシシラン類、およびその加水
分解物さらにはメチルトリメトキシシラン、メチルトリ
エトキシシラン、メチルトリメトキシエトキシシラン、
メチルトリアセ1へキシシラン、メチルトリブトキシシ
ラン、エチルトリメトキシシラン、エチルトリエトキシ
シラン、ビニルトリメトキシシラン、ビニルトリエトキ
シシラン、ビニルトリアセトキシシラン、ビニルトリメ
トキシエトキシシラン、フェニルトリメトキシシラン、
フェニルトリエトキシシラン、フェニルトリアセトキシ
シラン、γ−クロロプロピルトリメトキシシラン、γ−
クロロプロピルトリエトキシシラン、γ−クロロプロピ
ルトリアセトキシシラン、3.3.3−トリフロロプロ
ピルトリメトキシシラン、γ−メタクリルオキシプロピ
ルトリメトキシシラン、γ−アミノプロピルトリメトキ
シシラン、γ−アミノプロピルトリエトキシシラン、γ
−メルカプトプロピルトリメトキシシラン、γ−メルカ
プトプロピルトリエトキシシラン、N−β−(アミノエ
チル)−γ−アミノプロピルトリメトキシシラン、β−
シアノエチルトリエトキシシラン、メチルトリフエノキ
シシラン、り四ロメチルトリメトキシシラン、クロロメ
チルトリエトキシシラン、グリシドキシメチルl−リフ
トキシシラン、グリシドキシメチルトリエトキシシラン
、α−グリシドキシエチルトリメトキシシラン、α−グ
リシドキシエチルトリエトキシシラン、β−グリシドキ
シエチルトリメトキシシラン、β−グリシドキシエチル
トリエトキシシラン、α−グリシドキシプロピルトリメ
トキシシラン、α−グリシドキシプロピルトリエトキシ
シラン、β−グリシドキシプロビルトリメトキシシラン
、β−グリシドキシプロビルトリエトキシシラン、γ−
グリシドキシプロピルトリメトキシシラン、γ−グリシ
ドキシプロビルトリエトキシシラン、γ−グリシドキシ
プロピルトリブロポキシシラン、γ−グリシドキシプロ
ピルトリブトキシシラン、γ−グリシドキシプロピルト
リメトキシエトキシシラン、γ−グリシドキシプロピル
トリフエノキシシラン、α−グリシドキシブチルトリメ
トキシシラン、α−グリシドキシブチルトリエトキシシ
ラン、β−グリシドキシブチルトリメトキシシラン、β
−グリシドキシブチルトリエトキシシラン、γ−グリシ
ドキシブチルトリメトキシシラン、γ−グリシドキシブ
チルトリエトキシシラン、δ−グリシドキシブチルトリ
メトキシシラン、δ−グリシドキシブチルトリエトキシ
シラン、(3,4−エポキシシクロヘキシル)メチルト
リメトキシシラン、(3,4−エポキシシクロヘキシル
)メチルトリエトキシシラン、β−(3,4−エポキシ
シクロヘキシル)エチルトリメトキシシラン、β−(3
,4−エポキシシクロヘキシル)エチルトリエトキシシ
ラン、β−(3,4−エポキシシクロヘキシル)エチル
トリプロポキシシラン、β−(3,4−エポキシシクロ
ヘキシル)エチルトリブトキシシラン、β−(3,4−
エポキシシクロヘキシル)エチルトリメトキシエトキシ
シラン、β−(3,4−エポキシシクロヘキシル)エチ
ルトリフエノキシシラン、γ−(3,il−エポキシシ
クロヘキシル)プロピルトリメトキシシラン、γ−(3
,4−エポキシシクロヘキシル)プロピルトリエトキシ
シラン、β−(3,4−エポキシシクロヘキシル)ブチ
ルトリメトキシシラン、β−(3,4−エポキシシクロ
ヘキシル)ブチルトリエトキシシランなどのトリアルコ
キシシラン、トリアジルオキシシラン、またはトリフエ
ノキシシラン類またはその加水分解物およびジメチルジ
メトキシシラン、フェニルメチルジメトキシシラン、ジ
メチルジェトキシシラン、フェニルメチルジェトキシシ
ラン、γ−クロロプロピルメチルジメトキシシラン、γ
−クロロプロピルメチルジェトキシシラン、ジメチルジ
アセトキシシラン、γ−メタクリルオキシプロピルメチ
ルジメトキシシラン、γ−メタクリルオキシプロピルメ
チルジェトキシシラン、γ−メルカ1トプロビルメチル
ジメトキシシラン、γ−メルカプトプロピルメチルジェ
トキシシラン、γ−アミノプロピルメチルジメトキシシ
ラン、γ−アミノプロピルメチルジェトキシシラン、メ
チルビニルジメトキシシラン、メチルビニルジェトキシ
シラン、グリシドキシメチルメチルジメトキシシラン、
グリシドキシメチルメチルジェトキシシラン、α−グリ
シドキシエチルメチルジメトキシシラン、α−グリシド
キシエチルメチルジェトキシシラン、β−グリシドキシ
エチルメチルジメトキシシラン、β−グリシドキシエチ
ルメチルジェトキシシラン、α−グリシドキシプロピル
メチルジメトキシシラン、α−グリシドキシプロビルメ
チルジェトキシシラン、β−グリシドキシプロビルメチ
ルジメトキシシラン、β−グリシドキシプロビルメチル
ジェトキシシラン、γ−グリシドキシプロピルメチルジ
メトキシシラン、γ−グリシドキシプロピルメチルジェ
トキシシラン、γ−グリシドキシプロピルメチルジプロ
ボキシシラン、γ−グリシドキシプロピルメチルジブト
キシシラン、γ−グリシドキシプロビルメチルジメトキ
シエトキシシラン、γ−グリシドキシプロビルメチルジ
フェノキシシラン、γ−グリシドキシプロピルエチルジ
メトキシシラン、γ−グリシドキシプロピルエチルジェ
トキシシラン、γ−グリシドキシプロビルエチルジブロ
ポキシシラン、γ−グリシドキシプロビルビニルジメト
キシシラン、γ−グリシドキシプロピルビニルジェトキ
シシラン、γ−グリシドキシプロビルフエニルジメトキ
シシラン、γ−グリシドキシプロピルフエニルジエトキ
シシラン、などジアルコキシシランまたはジアシルオキ
シシラン類またはその加水分解物がその例である。R4c R” dS 1(X) 4-C-d (B
) (In the formula, R4 and R5 are each an alkyl group, an alkenyl group, an aryl group, or a hydrocarbon group having a halogen, an epoxy group, a glycidoxy group, an amino group, a mercapto group, a methacryloxy group, or a cyan group, and X is a hydrolyzable (C and d are O or 1) Specific representative examples of the organosilicon compound represented by the general formula (B) and/or its hydrolyzate include methyl silicate, ethyl silicate, n- Tetraalkoxysilanes such as propyl silicate, i-propyl silicate, 0-butyl silicate, 5ec-butyl silicate and t-butyl silicate, and their hydrolysates, as well as methyltrimethoxysilane, methyltriethoxysilane, methyltrimethoxyethoxy silane,
Methyltriacetoxysilane, methyltributoxysilane, ethyltrimethoxysilane, ethyltriethoxysilane, vinyltrimethoxysilane, vinyltriethoxysilane, vinyltriacetoxysilane, vinyltrimethoxyethoxysilane, phenyltrimethoxysilane,
Phenyltriethoxysilane, phenyltriacetoxysilane, γ-chloropropyltrimethoxysilane, γ-
Chloropropyltriethoxysilane, γ-chloropropyltriacetoxysilane, 3.3.3-trifluoropropyltrimethoxysilane, γ-methacryloxypropyltrimethoxysilane, γ-aminopropyltrimethoxysilane, γ-aminopropyltriethoxy Silane, γ
-mercaptopropyltrimethoxysilane, γ-mercaptopropyltriethoxysilane, N-β-(aminoethyl)-γ-aminopropyltrimethoxysilane, β-
Cyanoethyltriethoxysilane, methyltriphenoxysilane, tetraromethyltrimethoxysilane, chloromethyltriethoxysilane, glycidoxymethyl l-liftoxysilane, glycidoxymethyltriethoxysilane, α-glycidoxyethyltri Methoxysilane, α-glycidoxyethyltriethoxysilane, β-glycidoxyethyltrimethoxysilane, β-glycidoxyethyltriethoxysilane, α-glycidoxypropyltrimethoxysilane, α-glycidoxypropyltrimethoxysilane Ethoxysilane, β-glycidoxypropyltrimethoxysilane, β-glycidoxypropyltriethoxysilane, γ-
Glycidoxypropyltrimethoxysilane, γ-glycidoxypropyltriethoxysilane, γ-glycidoxypropyltribropoxysilane, γ-glycidoxypropyltributoxysilane, γ-glycidoxypropyltrimethoxyethoxysilane , γ-glycidoxypropyltriphenoxysilane, α-glycidoxybutyltrimethoxysilane, α-glycidoxybutyltriethoxysilane, β-glycidoxybutyltrimethoxysilane, β
-glycidoxybutyltriethoxysilane, γ-glycidoxybutyltrimethoxysilane, γ-glycidoxybutyltriethoxysilane, δ-glycidoxybutyltrimethoxysilane, δ-glycidoxybutyltriethoxysilane, ( 3,4-epoxycyclohexyl)methyltrimethoxysilane, (3,4-epoxycyclohexyl)methyltriethoxysilane, β-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, β-(3
, 4-Epoxycyclohexyl)ethyltriethoxysilane, β-(3,4-epoxycyclohexyl)ethyltripropoxysilane, β-(3,4-epoxycyclohexyl)ethyltributoxysilane, β-(3,4-
Epoxycyclohexyl)ethyltrimethoxyethoxysilane, β-(3,4-epoxycyclohexyl)ethyltriphenoxysilane, γ-(3,il-epoxycyclohexyl)propyltrimethoxysilane, γ-(3
, 4-epoxycyclohexyl)propyltriethoxysilane, β-(3,4-epoxycyclohexyl)butyltrimethoxysilane, β-(3,4-epoxycyclohexyl)butyltriethoxysilane, and other trialkoxysilanes and triazyloxysilanes. , or triphenoxysilanes or their hydrolysates and dimethyldimethoxysilane, phenylmethyldimethoxysilane, dimethyljethoxysilane, phenylmethyljethoxysilane, γ-chloropropylmethyldimethoxysilane, γ
-Chloropropylmethyljethoxysilane, dimethyldiacetoxysilane, γ-methacryloxypropylmethyldimethoxysilane, γ-methacryloxypropylmethyljethoxysilane, γ-mercaptopropylmethyldimethoxysilane, γ-mercaptopropylmethyljethoxysilane , γ-aminopropylmethyldimethoxysilane, γ-aminopropylmethyljethoxysilane, methylvinyldimethoxysilane, methylvinyljethoxysilane, glycidoxymethylmethyldimethoxysilane,
Glycidoxymethylmethyljethoxysilane, α-glycidoxyethylmethyldimethoxysilane, α-glycidoxyethylmethyljethoxysilane, β-glycidoxyethylmethyldimethoxysilane, β-glycidoxyethylmethyljethoxysilane , α-glycidoxypropylmethyldimethoxysilane, α-glycidoxypropylmethyljethoxysilane, β-glycidoxypropylmethyldimethoxysilane, β-glycidoxypropylmethyljethoxysilane, γ-glycid Xypropylmethyldimethoxysilane, γ-glycidoxypropylmethyljethoxysilane, γ-glycidoxypropylmethyldiproboxysilane, γ-glycidoxypropylmethyldibutoxysilane, γ-glycidoxypropylmethyldimethoxyethoxy Silane, γ-glycidoxypropylethyldiphenoxysilane, γ-glycidoxypropylethyldimethoxysilane, γ-glycidoxypropylethyljethoxysilane, γ-glycidoxypropylethyldibropoxysilane, γ- Dialkoxysilane or dimethoxysilane such as glycidoxypropylphenyldimethoxysilane, γ-glycidoxypropylvinyldimethoxysilane, γ-glycidoxypropylphenyldimethoxysilane, γ-glycidoxypropylphenyldiethoxysilane, etc. Acyloxysilanes or their hydrolysates are examples.
これらの有機ケイ素化合物は1種又は2種以上併用する
ことも可能である。These organosilicon compounds can be used alone or in combination of two or more.
これらの有機ケイ素化合物はキュア温度を下げ、硬化を
より進行させるためには加水分解して使用することが好
ましい。These organosilicon compounds are preferably used after being hydrolyzed in order to lower the curing temperature and further promote curing.
加水分解は純水または塩酸、酢酸あるいは硫酸などの酸
性水溶液を添加、撹拌することによって製造される。さ
らに純水、あるいは酸性水溶液の添加量を調節すること
によって加水分解の度合をコントロールすることも容易
に可能である。加水分解に際しては、−最大(B)の加
水分解性基と等モル以上、3倍モル以下の純水または酸
性水溶液の添加が硬化促進の点で特に好ましい。Hydrolysis is produced by adding and stirring pure water or an acidic aqueous solution such as hydrochloric acid, acetic acid, or sulfuric acid. Furthermore, the degree of hydrolysis can be easily controlled by adjusting the amount of pure water or acidic aqueous solution added. During hydrolysis, it is particularly preferable to add pure water or an acidic aqueous solution in an amount equal to or more than 3 times the mole of the hydrolyzable group of -maximum (B) from the viewpoint of accelerating curing.
加水分解に際しては、アルコール等が生成してくるので
、無溶媒で加水分解することが可能であるが、加水分解
をさらに均一に行なう目的で有機ケイ素化合物と溶媒を
混合した後、加水分解を行なうことも可能である。また
目的に応じて加水分解後のアルコール等を加熱および/
または減圧下に適当量除去して使用することも可能であ
るし、その後に適当な溶媒を添加することも可能である
。During hydrolysis, alcohol and other substances are produced, so it is possible to hydrolyze without a solvent, but in order to make the hydrolysis more uniform, hydrolysis is performed after mixing the organosilicon compound and a solvent. It is also possible. Depending on the purpose, alcohol etc. after hydrolysis may be heated and/or
Alternatively, it is possible to remove an appropriate amount under reduced pressure and use it, or it is also possible to add an appropriate solvent afterwards.
これらの溶媒としては、アルコール、エステル、エーテ
ル、ケトン、ハロゲン化炭化水素あるいはトルエン、キ
シレンなどの芳香族炭化水素などの溶媒が挙げられる。Examples of these solvents include alcohols, esters, ethers, ketones, halogenated hydrocarbons, and aromatic hydrocarbons such as toluene and xylene.
またこれらの溶媒は必要に応じて2種以上の混合溶媒と
して使用することも可能である。また、目的に応じて加
水分解反応を促進し、さらに予備縮合等の反応を進める
ために室温以上に加熱することも可能であるし、予備縮
合を抑えるために加水分解温度を室温以下に下げて行な
うことも可能であることは言うまでもない。Moreover, these solvents can also be used as a mixed solvent of two or more types as required. Furthermore, depending on the purpose, it is possible to accelerate the hydrolysis reaction and further advance reactions such as precondensation by heating above room temperature, or to suppress precondensation, the hydrolysis temperature can be lowered to below room temperature. Needless to say, it is possible to do so.
かかる有機ケイ素化合物および/またはその加水分解物
の硬化が通常、加熱によって行なわれるものであるが、
加熱時間の短縮、低温硬化を目的に各種の硬化触媒が添
加される。硬化触媒としてはカルボン酸のアルカリ金属
塩やアルミニウム、チタン、ジルコニウムなどのアルコ
キシドあるいはキレート化合物が挙げられる。Although curing of such an organosilicon compound and/or its hydrolyzate is usually carried out by heating,
Various curing catalysts are added for the purpose of shortening heating time and curing at low temperatures. Examples of the curing catalyst include alkali metal salts of carboxylic acids and alkoxides or chelate compounds of aluminum, titanium, zirconium, and the like.
とくにアセチルアセトンアルミニウム塩に代表されるア
ルミニウムキレート化合物は組成物の安定性、透明性さ
らには着色がないなどの点から好ましく用いられる。In particular, aluminum chelate compounds such as acetylacetone aluminum salt are preferably used from the viewpoint of composition stability, transparency, and absence of coloration.
また前記−最大(B)で示される有機ケイ素化合物の中
でもとくに基材との接着性、表面硬度向上、耐熱性、耐
候性などの点からR4、R5としては炭素数1〜4のア
ルキル基、アルケニル基、あるいはフェニル基、さらに
はエポキシ基、グリシドキシ基を有する有機基が好まし
い。In addition, among the organosilicon compounds represented by the above-mentioned maximum (B), R4 and R5 are alkyl groups having 1 to 4 carbon atoms, especially from the viewpoint of adhesion to the substrate, improvement of surface hardness, heat resistance, weather resistance, etc. An organic group having an alkenyl group, a phenyl group, an epoxy group, or a glycidoxy group is preferable.
かかる前記ビヒクル中にはさらに硬度向上、無機系基材
、とくに無機ガラス、ITOv4または酸化スズ膜を有
する無機ガラスなどへの接着性向上などの点から誘電体
コロイド状無機酸化物の添加が好ましく適用される。こ
こで誘電体コロイド状無機酸化物の具体例としてはSi
、Ti、Al、Zr、Sb、W、Taなどの金属酸化物
が挙げられ、とくに透明性付与の点から平均粒子径が1
nm〜200nmを有するものが好ましく使用される。It is preferable to add a dielectric colloidal inorganic oxide to the vehicle from the viewpoint of improving hardness and adhesion to inorganic base materials, especially inorganic glass, ITOv4, or inorganic glass having a tin oxide film. be done. Here, a specific example of the dielectric colloidal inorganic oxide is Si
, Ti, Al, Zr, Sb, W, Ta and other metal oxides, with an average particle diameter of 1.
Those having a wavelength of nm to 200 nm are preferably used.
中でも導電性を向上させる目的にはsbなどのVa族金
属酸化物が好ましい。Among these, Va group metal oxides such as sb are preferred for the purpose of improving conductivity.
本発明の透明幕村上に塗布される被膜の塗布手段として
は、刷毛塗り、浸漬塗り、ロール塗り、スクリーン印刷
法、スプレー塗装、スピン塗装、流し塗りなどの通常行
なわれる塗布方法が容易に使用可能である。As a coating means for coating the transparent curtain Murakami of the present invention, commonly used coating methods such as brush coating, dip coating, roll coating, screen printing, spray coating, spin coating, and flow coating can be easily used. It is.
本発明における被膜の膜厚はとくに限定されるものでは
ない。しかし、接着強度の保持、硬度などの点から0.
1μm〜50μmの間で好ましく用いられる。特に好ま
しくは0.5μm〜20μmである。また、被膜の塗布
にあたって、作業性、被膜厚さ調節などから各種溶剤に
より、稀釈して用いられるが稀釈溶剤としては例えば水
、アルコール、エステル、エーテル、ハロゲン化炭化水
素、ジメチルホルムアミド、ジメチルスルホキシドなど
が目的に応じて種々使用が可能であり、必要に応じて混
合溶媒を使用することもできる。また、酸化アンチモン
などのコロイド状無機酸化物を使用する場合にはその分
散性などの点から、水、アルコール、ジメチルホルムア
ミド、エチレングリコール、ジエチレングリコール、ト
リエチレングリコール、ベンジルアルコール、フェネチ
ルアルコール、フェニルセロソルブなどがとくに好まし
く用いられる。The thickness of the coating in the present invention is not particularly limited. However, from the point of view of adhesive strength retention, hardness, etc.
It is preferably used between 1 μm and 50 μm. Particularly preferably, the thickness is 0.5 μm to 20 μm. In addition, when applying a film, it is diluted with various solvents for workability and film thickness adjustment. Examples of diluting solvents include water, alcohol, ester, ether, halogenated hydrocarbon, dimethylformamide, dimethyl sulfoxide, etc. Various solvents can be used depending on the purpose, and a mixed solvent can also be used if necessary. In addition, when using colloidal inorganic oxides such as antimony oxide, from the viewpoint of dispersibility etc., water, alcohol, dimethylformamide, ethylene glycol, diethylene glycol, triethylene glycol, benzyl alcohol, phenethyl alcohol, phenyl cellosolve, etc. is particularly preferably used.
本発明被膜中にはビヒクル成分として前述のケイ素化合
物以外に使用可能なものとして、各種エポキシ樹脂、メ
ラミン樹脂、アクリル樹脂、ウレタン樹脂、ポリ量化ビ
ニルおよびそのケン化物、ナイロン樹脂、ポリエステル
樹脂など透明性を大きく損なうことなく、また、硬度を
低下させることのない範囲で使用可能である。また、被
膜中に含まれるビヒクルの含有量としては、全被膜中に
10〜70重景%含まれていることが好ましい。In addition to the above-mentioned silicon compounds, the coating of the present invention may contain transparent resins such as various epoxy resins, melamine resins, acrylic resins, urethane resins, polymerized vinyl and its saponified products, nylon resins, and polyester resins. It can be used within the range without significantly impairing the properties or reducing the hardness. Moreover, the content of the vehicle contained in the coating is preferably 10 to 70% by weight in the entire coating.
すなわち、これより少ないと外観、基材との接着性など
に問題が生じ、またこれより多くなると導電性が不良と
なるなどの問題がある。That is, if the amount is less than this, there will be problems with appearance, adhesion to the base material, etc., and if it is more than this, there will be problems such as poor conductivity.
本発明における被膜は通常、前述の各種成分からなる組
成物を基材上に塗布して形成されるものである。The film in the present invention is usually formed by applying a composition comprising the various components described above onto a substrate.
これらの組成物から被膜を形成するには一般的にはこれ
らの組成物を含有するコーティング組成物を塗布した後
、加熱により乾煤硬化させる。To form a film from these compositions, a coating composition containing these compositions is generally applied and then cured by dry soot by heating.
硬化温度は選択される組成物、作業条件、基材などによ
っても異なるが60℃〜300℃、好ましくは80℃〜
200°Cが用いられる。これより低温度では硬化が不
十分であり、高温度ではクラック、被膜の分解などの不
都合が生ずる。The curing temperature varies depending on the selected composition, working conditions, base material, etc., but is preferably 60°C to 300°C, preferably 80°C to
200°C is used. If the temperature is lower than this, curing will be insufficient, and if the temperature is higher than this, problems such as cracks and decomposition of the film will occur.
本発明によって得られる被膜はその使用目的に応じて被
膜の導電性、透明性は最適化されるべきものであるが、
通常の透明基材への適用、液晶入力装置への応用などを
考慮すると5X105Ω・印以下の比抵抗値で、曇価が
30%以下が好ましく用いられる。一方、帯電防止を目
的とする場合には5X106Ω・印以下の比抵抗値で、
曇価が80%以下、さらに好ましくはlX106Ω・】
以下、40%以下が適用される。また、入力装置への適
用で鉛筆などの導電性ペンを使用する場合にはその描画
跡を残さない、あるいは除去しやすくする意味からその
被膜における表面粗さは2μm未満であることが好まし
い。ここで表面MUさとはJIS BO651に定め
られた方法によって測定されるものである。The conductivity and transparency of the film obtained by the present invention should be optimized depending on its intended use.
Considering application to ordinary transparent substrates, liquid crystal input devices, etc., a resistivity value of 5×10 5 Ω·mark or less and a haze value of 30% or less are preferably used. On the other hand, if the purpose is to prevent static electricity, the specific resistance value is less than 5X106Ω・mark.
Haze value is 80% or less, more preferably 1×106Ω・】
Below, 40% or less will be applied. Further, when a conductive pen such as a pencil is used for application to an input device, the surface roughness of the coating is preferably less than 2 μm in order to avoid leaving a drawing mark or to make it easy to remove. Here, the surface MU is measured by the method specified in JIS BO651.
本発明における各成分の分散方法としては、単純な撹拌
羽根使用による撹拌でも充分であるが、さらに分散状態
を良好にする意味からはペイントコンディショナー、サ
ンドミル、三本ロール、ボールミル、ホモミキサー、ホ
モジナイザーなどが好ましく使用される。As a method for dispersing each component in the present invention, stirring using a simple stirring blade is sufficient, but in order to improve the dispersion state, paint conditioners, sand mills, three-roll mills, ball mills, homo mixers, homogenizers, etc. can be used. is preferably used.
一方、分散状態を安定に保つ目的から各種界面活性剤の
添加も好ましく適用され、特にシリコーン系界面活性剤
、フッ素系界面活性剤、さらにはフェニルエーテル系界
面活性剤などの非イオン系界面活性剤が好ましく使用さ
れる。On the other hand, in order to maintain a stable dispersion state, it is preferable to add various surfactants, especially nonionic surfactants such as silicone surfactants, fluorine surfactants, and even phenyl ether surfactants. is preferably used.
また、該被膜の色調と補色関係にある染料などを添加す
ることによっ着色の色調を感じない透明透明導電性被膜
とすることもできる。Furthermore, by adding a dye or the like having a complementary color relationship to the color tone of the film, a transparent conductive film that does not show any color tone can be obtained.
本発明によって得られる透明導電性被膜は、透明性、表
面硬度に優れ、窓ガラス、CR’l’や液晶などの各種
デイスプレィの前面板、あるいはこれらのデイスプレィ
への入力装置部品として有用である。The transparent conductive film obtained by the present invention has excellent transparency and surface hardness, and is useful as front plates of various displays such as window glasses, CR'l' and liquid crystal displays, or input device parts for these displays.
[実施例]
以下に本発明の趣旨を明瞭にするために実施例を挙げる
が、本発明はこれらの実施例に限定されるものではない
。[Examples] Examples are given below to clarify the gist of the present invention, but the present invention is not limited to these Examples.
実施例1
(1)シラン加水分解物の調製
γ−グリシドキシプロピルトリメトキシシラン30.2
gを10℃に冷却し、撹拌しながら0001規定塩酸水
溶液6.9gを徐々に滴下し、滴下終了後、室温にてさ
らに1時間撹拌を続けてシラン加水分解物を得た。Example 1 (1) Preparation of silane hydrolyzate γ-glycidoxypropyltrimethoxysilane 30.2
g was cooled to 10° C., 6.9 g of 0001 N aqueous hydrochloric acid solution was gradually added dropwise with stirring, and after the dropwise addition was completed, stirring was continued for another 1 hour at room temperature to obtain a silane hydrolyzate.
(2) コーティング剤の調製
前記シラン加水分解物に、ビスフェノールA型エポキシ
樹脂(シェル化学社製 商品名 エピコート827)7
.1g、N、N−ジメチルホルムアミド22.1g、ベ
ンジルアルコール10.0g、メチルアルコール17.
1g、シリコーン系界面活性剤1.5gを添加混合し、
さらにコロイド状五酸化テンチモンゾル(日産化学社製
商品名アンチモンゾルA−2550>29.7g、ア
セチルアセトンアルミニウム塩2.2gを添加し、充分
撹拌した。(2) Preparation of coating agent Bisphenol A type epoxy resin (trade name: Epicoat 827, manufactured by Shell Chemical Co., Ltd.) 7 is added to the silane hydrolyzate.
.. 1g, N,N-dimethylformamide 22.1g, benzyl alcohol 10.0g, methyl alcohol 17.
1g of silicone surfactant and 1.5g of silicone surfactant were added and mixed.
Further, 29.7 g of colloidal tentimony pentoxide sol (trade name: antimony sol A-2550, manufactured by Nissan Chemical Co., Ltd.) and 2.2 g of acetylacetonaluminum salt were added and thoroughly stirred.
さらに導電性微粒子として、表面をトリメチルメトキシ
シラン(カーボン量0.05%)で処理した平均粒子径
が061μmの酸化インジウム/酸化スズ系混合無機酸
化物(ITO微粒子)を10.0g添加して、次いでフ
ェネチルアルコール395gを添加し、ホモジナイザで
充分分散させてコーティング剤とし/ご。Further, as conductive particles, 10.0 g of indium oxide/tin oxide mixed inorganic oxide (ITO particles) whose surface was treated with trimethylmethoxysilane (carbon content 0.05%) and whose average particle diameter was 061 μm was added. Next, 395 g of phenethyl alcohol was added and thoroughly dispersed with a homogenizer to form a coating agent.
り3)コーティング剤の塗布、キュア
前項のコーティング剤を厚み3゜ommの平板状無機ガ
ラス基板に#16のバーコーターを使用して塗布した。3) Application of coating agent and curing The coating agent described in the previous section was applied to a flat inorganic glass substrate with a thickness of 3 mm using a #16 bar coater.
塗■i後、5分間室内にてセツティングを行ない、その
後、80℃、12分間、さらに130℃で2時間、加熱
キュアさ坊た。After coating, it was set indoors for 5 minutes, and then heat cured at 80°C for 12 minutes and then at 130°C for 2 hours.
(4)評価方法 (イ)塗膜厚み 、JfS BO651に従って行った。(4) Evaluation method (a) Paint film thickness , JfS BO651.
(D)表面硬度
JIS K5400にて4HH筆硬度を測定して、表
面硬度としな。(D) Surface hardness 4HH brush hardness was measured according to JIS K5400, and the surface hardness was determined.
(ハ)透過率、ヘイズ
直続ヘイズコンピューター(スガ試験機(株)製、型式
HG M〜2丁月)を使用して測定しtコ。(c) Transmittance, measured using a haze direct-connected haze computer (manufactured by Suga Test Instruments Co., Ltd., model HG M-2).
(ニ)シート表面抵抗値 4探針法にJ:る表面抵抗値を求めた。(d) Sheet surface resistance value The surface resistance value was determined using the four-probe method.
(5)評価結果
得られた透明導電性被膜は、良好な透明性を有し、着色
は軽微であり、外観上好ましいものであった。また、本
被膜を湿度20%RHの低湿度で布によ乙摩耗帯電テス
トを行なったところ、非常に良好な帯電防止効果のある
ことが確認できた。(5) The transparent conductive film obtained as an evaluation result had good transparency, slight coloring, and was favorable in terms of appearance. Further, when this coating was subjected to a cloth abrasion charging test at a low humidity of 20% RH, it was confirmed that it had a very good antistatic effect.
他の諸物性を表1に示した。Other physical properties are shown in Table 1.
実施例2
実施例1.において、基板を厚み1.mmの透明導電膜
付ガラス(ネサガラス110Ω/口)とし、コーティン
グ剤の塗布方法をバーコータ法に変えて、スピンコータ
法を用いた以外は、実施例1と同様に行なった。得られ
た導電性被膜は、実施例1、と同様に透明性に優れた被
膜であるとともに、被膜表面からの描画入力に対して、
導電股間に被膜全面にわたって安定した導通が得られた
。また硬度Bのエンピッで描画し2なところ、10,0
00回でもキズが生じず、描画耐久性に優れた保護層が
得られた。他の諸物性は表1に示した。Example 2 Example 1. , the thickness of the substrate is 1. The same procedure as in Example 1 was carried out, except that glass with a transparent conductive film (Nesa glass 110 Ω/hole) having a diameter of 1.5 mm was used, and the method of applying the coating agent was changed to a bar coater method and a spin coater method was used. The obtained conductive film is a film with excellent transparency as in Example 1, and also has excellent resistance to drawing input from the film surface.
Stable conduction was obtained over the entire surface of the coating between the conductive legs. Also, when drawn with an empi with hardness B, it is 2, 10,0
Even after 00 times, no scratches were generated, and a protective layer with excellent drawing durability was obtained. Other physical properties are shown in Table 1.
実施例3
実施例2において、導電性微粒子の表面をヘキサメチル
ジシラザン(カーボン景1.0%)で゛処理した以外は
実施例2と同様に行なった。得られた透明導電性被膜は
、実施例2と同様の描画耐久性に優れた保護膜であった
。その他の諸物性を表1に示した。Example 3 The same procedure as in Example 2 was carried out except that the surface of the conductive fine particles was treated with hexamethyldisilazane (carbon content: 1.0%). The obtained transparent conductive film was a protective film with excellent drawing durability similar to that of Example 2. Other physical properties are shown in Table 1.
実施例11
実施例1において導電性微粒子およびビヒクルによる若
干の着色を軽減するため、導電性微粒子とビヒクルの色
調の補色染料として純色素成分よりなるPTF3−31
(CIナンバーDisperse−26)0.012
gとPTV−57(CIナンバーDisperse−3
1)0 、063 gを追加添加し、ホモジナイザーで
充分に分散させてコーティング剤とした他は、実施例1
と同様にして行った。得られた被膜は無色透明であり、
着色度(YI値〉は1/2に軽減した。またこの被膜は
、実施例1同様の良好な静電防止被膜であることを確認
した。他の諸物性を表1に示しtこ。Example 11 In order to reduce the slight coloring caused by the conductive fine particles and vehicle in Example 1, PTF3-31 consisting of a pure pigment component was used as a complementary color dye of the conductive fine particles and vehicle.
(CI number Disperse-26) 0.012
g and PTV-57 (CI number Disperse-3
1) Example 1 except that 0.063 g was added and sufficiently dispersed with a homogenizer to form a coating agent.
I did it in the same way. The obtained film is colorless and transparent,
The degree of coloration (YI value) was reduced to 1/2. It was also confirmed that this film was a good antistatic film similar to Example 1. Other physical properties are shown in Table 1.
比較例1
実施例1において表面処理を行わない酸化インジウム、
/酸化スズ系混合無機酸化物(ITo微粒子)をした以
外は実施例1と同様に行った。14)られな透明導電性
被膜は表面硬度が61−■とやや不足していた。他の諸
物性を表1に示す。Comparative Example 1 Indium oxide without surface treatment in Example 1,
/Tin oxide-based mixed inorganic oxide (ITo fine particles) was used in the same manner as in Example 1. 14) The surface hardness of the transparent conductive coating was slightly insufficient at 61-■. Other physical properties are shown in Table 1.
比較例2
実施例2において、表面処理を行わないITO微粒子を
使用した以外は、実施例2と同様に行った。得られた被
膜は透明性に優れ、導通性能も1憂れたものであったが
、表面硬度が5Hとやや不足していた。Comparative Example 2 The same procedure as in Example 2 was conducted except that ITO fine particles without surface treatment were used. The resulting coating had excellent transparency and poor conductivity, but the surface hardness was 5H, which was slightly insufficient.
[発明の効果]
本発明によって得れる透明導電性被膜には次のような効
果がある。[Effects of the Invention] The transparent conductive film obtained by the present invention has the following effects.
1、表面硬度の高い被膜が形成され、描画耐久性に優れ
ている。1. A coating with high surface hardness is formed and has excellent drawing durability.
2、透明性が高く、導電性に優れているので入力装置に
有用である。2. High transparency and excellent conductivity, making it useful for input devices.
3、低湿度においても帯電防止性に優れる。3. Excellent antistatic properties even at low humidity.
Claims (2)
導電性微粒子とビヒクルとを主成分としてなることを特
徴とする透明導電性被膜。(1) A transparent conductive film characterized by comprising as main components conductive fine particles surface-treated with a carbon-containing silane coupling agent and a vehicle.
式(A)で示されるシラン官能基を有する化合物によっ
てなされることを特徴とする請求項(1)記載の透明導
電性被膜。 R^1R^2_aR^3_bSiO_(_3_−_a_
−_b_)(A) (式中R^1、R^2、R^3は各々、水素、アルキル
基、アルケニル基、アリール基、またはハロゲン、エポ
キシ基、グリシドキシ基、アミノ基、メルカプト基、メ
タクリルオキシ基およびシアノ基から選ばれる少なくと
も1つの置換基を有する炭化水素基であり、aおよびb
は、0または1である。)(2) The transparent conductive film according to claim (1), wherein the treatment with a carbon-containing silane coupling agent is performed using a compound having a silane functional group represented by the following general formula (A). R^1R^2_aR^3_bSiO_(_3_-_a_
-_b_)(A) (In the formula, R^1, R^2, and R^3 are each hydrogen, an alkyl group, an alkenyl group, an aryl group, or a halogen, an epoxy group, a glycidoxy group, an amino group, a mercapto group, or a methacrylic group. A hydrocarbon group having at least one substituent selected from an oxy group and a cyano group, and a and b
is 0 or 1. )
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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JP63088845A JP2638911B2 (en) | 1988-04-11 | 1988-04-11 | Transparent conductive coating |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP63088845A JP2638911B2 (en) | 1988-04-11 | 1988-04-11 | Transparent conductive coating |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH01261469A true JPH01261469A (en) | 1989-10-18 |
JP2638911B2 JP2638911B2 (en) | 1997-08-06 |
Family
ID=13954309
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Application Number | Title | Priority Date | Filing Date |
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JP63088845A Expired - Lifetime JP2638911B2 (en) | 1988-04-11 | 1988-04-11 | Transparent conductive coating |
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0688022A2 (en) * | 1991-03-27 | 1995-12-20 | Canon Kabushiki Kaisha | Optical modulation element |
WO2001018137A1 (en) * | 1999-09-06 | 2001-03-15 | Ishihara Sangyo Kaisha, Ltd. | Organic solvent based dispersion of conductive powder and conductive coating material |
JP2003059343A (en) * | 2001-06-05 | 2003-02-28 | Nihon University | Conductive film and its manufacturing method |
JP2005226049A (en) * | 2004-02-16 | 2005-08-25 | Hitachi Chem Co Ltd | Circuit-joining material, film-formed circuit-joining material by using the same, joining structure of circuit member and method for producing the same |
JP2007220463A (en) * | 2006-02-16 | 2007-08-30 | Kagawa Univ | Conductive paste and its manufacturing method, wiring cable using the same and its manufacturing method, and electronic component and electronic device using the same |
JP2011026451A (en) * | 2009-07-24 | 2011-02-10 | Shimizu:Kk | Electrodeposition coating composition exhibiting excellent uniform electrodeposition property, water-based electrodeposition coating material, electrodeposition coating method and electrodeposition-coated product |
JP2020076040A (en) * | 2018-11-07 | 2020-05-21 | ニホンハンダ株式会社 | Method for producing conductive filler, conductive addition reaction curable type silicone composition, and semiconductor device |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2009022436A1 (en) | 2007-08-16 | 2009-02-19 | Kazufumi Ogawa | Conductive paste and method for manufacturing the same, wiring using the conductive paste and method for manufacturing the same |
US20140315031A1 (en) * | 2013-04-17 | 2014-10-23 | Hiromitsu Furuichi | Silicone coating material and transparent substrate having heat-shielding structure |
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JPS57141465A (en) * | 1981-02-25 | 1982-09-01 | Honda Motor Co Ltd | Electrically conductive, corrosion-proof paint composition |
JPS59181001A (en) * | 1983-03-30 | 1984-10-15 | 株式会社村田製作所 | Carbon resistance paste |
JPS62280271A (en) * | 1986-05-28 | 1987-12-05 | Sunstar Giken Kk | Electrically conductive paint |
JPS6363751A (en) * | 1986-09-03 | 1988-03-22 | Shiseido Co Ltd | Resin composition |
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Patent Citations (4)
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JPS57141465A (en) * | 1981-02-25 | 1982-09-01 | Honda Motor Co Ltd | Electrically conductive, corrosion-proof paint composition |
JPS59181001A (en) * | 1983-03-30 | 1984-10-15 | 株式会社村田製作所 | Carbon resistance paste |
JPS62280271A (en) * | 1986-05-28 | 1987-12-05 | Sunstar Giken Kk | Electrically conductive paint |
JPS6363751A (en) * | 1986-09-03 | 1988-03-22 | Shiseido Co Ltd | Resin composition |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0688022A2 (en) * | 1991-03-27 | 1995-12-20 | Canon Kabushiki Kaisha | Optical modulation element |
EP0688022A3 (en) * | 1991-03-27 | 1996-07-17 | Canon Kk | Optical modulation element |
WO2001018137A1 (en) * | 1999-09-06 | 2001-03-15 | Ishihara Sangyo Kaisha, Ltd. | Organic solvent based dispersion of conductive powder and conductive coating material |
US6833088B1 (en) | 1999-09-06 | 2004-12-21 | Ishihara Sangyo Kaisha, Ltd. | Organic solvent based dispersion of conductive powder and conductive coating material |
JP2003059343A (en) * | 2001-06-05 | 2003-02-28 | Nihon University | Conductive film and its manufacturing method |
JP2005226049A (en) * | 2004-02-16 | 2005-08-25 | Hitachi Chem Co Ltd | Circuit-joining material, film-formed circuit-joining material by using the same, joining structure of circuit member and method for producing the same |
JP2007220463A (en) * | 2006-02-16 | 2007-08-30 | Kagawa Univ | Conductive paste and its manufacturing method, wiring cable using the same and its manufacturing method, and electronic component and electronic device using the same |
JP2011026451A (en) * | 2009-07-24 | 2011-02-10 | Shimizu:Kk | Electrodeposition coating composition exhibiting excellent uniform electrodeposition property, water-based electrodeposition coating material, electrodeposition coating method and electrodeposition-coated product |
JP2020076040A (en) * | 2018-11-07 | 2020-05-21 | ニホンハンダ株式会社 | Method for producing conductive filler, conductive addition reaction curable type silicone composition, and semiconductor device |
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