JPH01251742A - Surface treatment - Google Patents
Surface treatmentInfo
- Publication number
- JPH01251742A JPH01251742A JP7870688A JP7870688A JPH01251742A JP H01251742 A JPH01251742 A JP H01251742A JP 7870688 A JP7870688 A JP 7870688A JP 7870688 A JP7870688 A JP 7870688A JP H01251742 A JPH01251742 A JP H01251742A
- Authority
- JP
- Japan
- Prior art keywords
- water
- treatment
- wiring
- corrosion
- fence
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004381 surface treatment Methods 0.000 title claims description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 36
- 229910001868 water Inorganic materials 0.000 claims abstract description 32
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 24
- 238000005406 washing Methods 0.000 claims abstract description 24
- 238000000034 method Methods 0.000 claims abstract description 22
- 239000007789 gas Substances 0.000 claims abstract description 15
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 13
- 239000000956 alloy Substances 0.000 claims abstract description 13
- 238000005530 etching Methods 0.000 claims abstract description 10
- 229910018594 Si-Cu Inorganic materials 0.000 claims abstract description 6
- 229910008465 Si—Cu Inorganic materials 0.000 claims abstract description 6
- 239000000758 substrate Substances 0.000 claims description 15
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 3
- 229910052731 fluorine Inorganic materials 0.000 claims description 3
- 239000011737 fluorine Substances 0.000 claims description 3
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 3
- 125000004430 oxygen atom Chemical group O* 0.000 claims description 3
- 230000001590 oxidative effect Effects 0.000 claims 1
- 238000005260 corrosion Methods 0.000 abstract description 25
- 230000007797 corrosion Effects 0.000 abstract description 25
- 239000001301 oxygen Substances 0.000 abstract description 13
- 229910052760 oxygen Inorganic materials 0.000 abstract description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 9
- 239000001257 hydrogen Substances 0.000 abstract description 8
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
- KLZUFWVZNOTSEM-UHFFFAOYSA-K Aluminum fluoride Inorganic materials F[Al](F)F KLZUFWVZNOTSEM-UHFFFAOYSA-K 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000010306 acid treatment Methods 0.000 description 4
- 229910000881 Cu alloy Inorganic materials 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- IRPGOXJVTQTAAN-UHFFFAOYSA-N 2,2,3,3,3-pentafluoropropanal Chemical compound FC(F)(F)C(F)(F)C=O IRPGOXJVTQTAAN-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 238000005536 corrosion prevention Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Landscapes
- Local Oxidation Of Silicon (AREA)
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
Abstract
Description
【発明の詳細な説明】
［発明の目的］
（産業上の利用分野）
本発明は、表面処理方法に係わり、特にＡＩエツチング
後の後処理として用いられる表面処理方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial Application Field) The present invention relates to a surface treatment method, and particularly to a surface treatment method used as a post-treatment after AI etching.
（従来の技術）
従来、半導体装置の配線材料としては、ＡｌやＡｌ−５
ｉ合金等が広く用いられている。(Prior Art) Conventionally, wiring materials for semiconductor devices include Al and Al-5.
i-alloy etc. are widely used.
Ａｌ−５ｉ合金からなる配線パターンは、基板上にＡｌ
−５ｉ合金膜を堆積した後、ＲＩＥ等で合金膜を選択エ
ツチングすることにより形成される。The wiring pattern made of Al-5i alloy is made of Al-5i alloy on the substrate.
It is formed by depositing a -5i alloy film and then selectively etching the alloy film using RIE or the like.
この際、多層レジストマスクや形状の良いレジストをマ
スクとしてエツチングを行うと、第６図（ａ）に示す如
くパターンの側壁にエツチング生成物やレジストの分解
物等が再付着し、所謂フェンスを形成する。このフェン
スはＡｌ、Ｓｉ及びカーボン等を含有するため、通常の
レジスト除去・方法である酸素プラズマアッシングでは
除去されず、第６図（ｂ）に示す如くフェンスが残留す
る。従って、フェンス除°去のためには、例えば希弗酸
に浸す等、他の除去プロセスを必、要とする。なお、第
６図において、６１はシリコン基板、６２は酸化シリコ
ン膜、６３はＡｌ−５ｉ合金膜、６４はレジスト、６５
はフェンス、６６はスピンオンガラスを示している。At this time, if etching is performed using a multilayer resist mask or a well-shaped resist as a mask, etching products and resist decomposition products will re-adhere to the sidewalls of the pattern, forming a so-called fence, as shown in Figure 6(a). do. Since this fence contains Al, Si, carbon, etc., it is not removed by oxygen plasma ashing, which is a normal resist removal method, and the fence remains as shown in FIG. 6(b). Therefore, fence removal requires other removal processes, such as dipping in dilute hydrofluoric acid. In FIG. 6, 61 is a silicon substrate, 62 is a silicon oxide film, 63 is an Al-5i alloy film, 64 is a resist, and 65 is a silicon substrate.
indicates a fence, and 66 indicates spin-on glass.
ところで、フェンス除去のための希弗酸処理の後は、水
洗処理を必゛要とするが、この水洗処理では配線が腐蝕
する問題がある。特に、近年Ａｌ−３ｉ合金に代わる高
信頼性配線材料として使用されているＡｌ−３ｉ−Ｃｕ
の場合、希弗酸に没してフェンスを除去した後水洗する
と、Ａｌ−３ｉ−Ｃｕが腐蝕され、配線がいたるところ
で切断してしまうと言う問題がある。今後の微細パター
ンを寸法制御性良く形成するためには、プロファイルの
良いレジストの使用が必須であり、また多層レジスト法
も本格的に使用されるようになる。Incidentally, after the dilute hydrofluoric acid treatment for fence removal, water washing is required, but this water washing has the problem of corroding the wiring. In particular, Al-3i-Cu, which has recently been used as a highly reliable wiring material to replace Al-3i alloy,
In this case, there is a problem that if the fence is removed by immersion in dilute hydrofluoric acid and then washed with water, the Al-3i-Cu will be corroded and the wiring will be cut everywhere. In order to form future fine patterns with good dimensional control, it will be essential to use resists with good profiles, and multilayer resist methods will also come into full-scale use.
従って、フェンスの除去は必ず必要となるプロセスであ
り、水洗による腐蝕は重大な問題である。Therefore, fence removal is a necessary process, and corrosion due to washing is a serious problem.
（発明が解決しようとする課題）
このように従来、ＡＩ又はＡｌを含む合金からなる配線
を形成した被処理基体に対し、希弗酸でフェンスを除去
した後水洗すると、配線が腐蝕する問題がある。水洗処
理は、次の工程に進むための前段階として不可欠であり
、従って水洗しても腐蝕しない防蝕処理が望まれていた
。(Problem to be Solved by the Invention) Conventionally, when a substrate to be processed on which wiring made of an alloy containing AI or Al is formed is washed with water after removing the fence with dilute hydrofluoric acid, there is a problem that the wiring corrodes. be. Water washing treatment is essential as a preliminary step before proceeding to the next step, and therefore, a corrosion-proofing treatment that does not cause corrosion even after washing with water has been desired.
本発明は、上記事情を考慮してなされたもので、その目
的とするところは、フェンス除去のための希弗酸処理後
の水洗処理における配線の腐蝕を防止することができ、
配線の信頼性向上等に寄与し得る表面処理方法を提供す
ることにある。The present invention has been made in consideration of the above circumstances, and its purpose is to prevent corrosion of wiring during water washing treatment after dilute hydrofluoric acid treatment for fence removal;
The object of the present invention is to provide a surface treatment method that can contribute to improving the reliability of wiring.
［発明の構成］
（課題を解決するための手段）
本発明の骨子は、希弗酸で処理した後の処理方法として
、酸素ラジカルと水素又は水を作用させることにより、
表面を酸化することにある。[Structure of the Invention] (Means for Solving the Problems) The gist of the present invention is that as a treatment method after treatment with dilute hydrofluoric acid, by making oxygen radicals interact with hydrogen or water,
The purpose is to oxidize the surface.
即ち本発明は、表面にアルミニウム又はアルミニウムを
含む合金からなる配線を形成した被処理基体の表面処理
方法において、被処理基体を弗素ガス又は希弗酸で処理
した後、該被処理基体を酸素原子と水蒸気又は少なくと
も水素原子を含むガス雰囲気中に晒して配線の表面を酸
化し、しかるのち被処理基体を水洗処理するようにした
方法である。That is, the present invention provides a surface treatment method for a substrate to be treated on which a wiring made of aluminum or an alloy containing aluminum is formed, in which the substrate to be treated is treated with fluorine gas or dilute hydrofluoric acid, and then the substrate is treated with oxygen atoms. In this method, the surface of the wiring is oxidized by exposing it to a gas atmosphere containing water vapor or at least hydrogen atoms, and then the substrate to be treated is washed with water.
（作 用）
本発明によれば、被処理基体を酸素原子と水蒸気又は少
なくとも水素原子を含むガス雰囲気中に晒すことにより
配線の表面を酸化するが、この酸化反応は燃焼酸化であ
り、形成される酸化膜は化学的に極めて安定なアルミナ
である。従って、その後に水洗処理しても腐蝕は全く発
生せず、配線の信頼性を著しく向上させることが可能と
なる。(Function) According to the present invention, the surface of the wiring is oxidized by exposing the substrate to be treated to a gas atmosphere containing oxygen atoms and water vapor or at least hydrogen atoms, but this oxidation reaction is combustion oxidation, and the formed The oxide film used is alumina, which is chemically extremely stable. Therefore, even if the wire is washed with water afterwards, no corrosion occurs at all, making it possible to significantly improve the reliability of the wiring.
本発明者等は、腐蝕のメカニズムを鋭意検討した結果、
以下の事実を見出だした。さらに、この事実に基づき、
本発明の機構は次のように考えることができる。As a result of intensive study of the corrosion mechanism, the present inventors found that
We found the following facts. Furthermore, based on this fact,
The mechanism of the present invention can be considered as follows.
まず、腐蝕発生の頻度を水洗時間に対して調べた。３層
レジストマスクでＢＣＩ、とＣ１２混合ガスを用いてＡ
ｌ−５ｉ−Ｃｕをエツチングした後、酸素プラズマアッ
シングによりレジストを除去し、さらに１％ＨＦに浸し
てフェンスを除去し、その後水洗処理して水洗時間によ
る腐蝕発生を顕微鏡観察によって調べた。約６０μｍ角
の中での幅１μｍの配線に発生している腐蝕の頻度を第
４図に示す。図から判るように、腐蝕頻度は水洗時間の
増大と共に増加することが明らかとなった。First, the frequency of corrosion occurrence was investigated with respect to the washing time. A with a 3-layer resist mask using BCI and C12 mixed gas
After etching the l-5i-Cu, the resist was removed by oxygen plasma ashing, and the fence was removed by immersion in 1% HF, followed by water washing, and the occurrence of corrosion depending on the water washing time was examined by microscopic observation. FIG. 4 shows the frequency of corrosion occurring in a 1 μm wide wiring within an approximately 60 μm square. As can be seen from the figure, it became clear that the corrosion frequency increased as the washing time increased.
また、特定の腐蝕箇所に着目して、Ａｌ−３ｉ−Ｃｕの
流失量の水洗時間による変化を調べたところ、第５図に
示すように水洗時間と共に流失量は増大することも判っ
た。さらに、１％ＨＦ溶液に基板を浸してフェンスを除
去し、メチルアルコールを用いて乾燥した直後のＡｌ−
３ｉ−Ｃｕ表面をＸＰＳで分析した結果、表面には弗化
アルミニウムが形成されていることが判明した。また、
Ａｌ−５ｔ−Ｃｕは、表面が酸化膜に覆われていないか
ぎり水に溶解することはよく知られている。Furthermore, by focusing on specific corrosion locations, we investigated the change in the amount of Al-3i-Cu washed away depending on the washing time, and as shown in FIG. 5, it was found that the amount washed away increased with the washing time. Furthermore, the fence was removed by immersing the substrate in a 1% HF solution, and the Al-
As a result of analyzing the 3i-Cu surface by XPS, it was found that aluminum fluoride was formed on the surface. Also,
It is well known that Al-5t-Cu dissolves in water unless the surface is covered with an oxide film.
以上の事実より、まず、フェンス除去処理によって表面
にＡＩＦ、が形成される。ＡＩＦ、は、水には微量であ
るが溶解するため、水洗中に徐々に溶解し、ＡＩＦ、層
の厚さが薄い領域のＡｌ−５ｉ−Ｃｕが水に晒されるよ
うになる。Ａｌ−３ｉ−Ｃｕは、既に述べたように水に
溶解するため、Ａｌ−５ｉ−Ｃｕの流失が起こる。−度
溶解が始まると、溶解し続けるため、特定箇所に注目し
た場合は、その箇所の流失量が増大し続けることになる
。ＡｌＦ３層の厚さが厚い領域も、水洗時間が増大する
と、やがてＡｌＦ３層がなくなりＡｌ−Ｓｉ−Ｃｕが水
に晒されるため、腐蝕が起こる。そのため、水洗時間と
共に腐蝕頻度は増加する。Based on the above facts, first, AIF is formed on the surface by the fence removal process. Since AIF dissolves in water, although in a small amount, it gradually dissolves during washing with water, and the AIF and Al-5i-Cu in the region where the layer thickness is thin become exposed to water. Since Al-3i-Cu dissolves in water as described above, Al-5i-Cu is washed away. Once dissolution begins, it continues to dissolve, so if you focus on a specific location, the amount lost at that location will continue to increase. Corrosion also occurs in areas where the AlF3 layer is thick as the washing time increases, as the AlF3 layer eventually disappears and the Al-Si-Cu is exposed to water. Therefore, the frequency of corrosion increases with the washing time.
このような腐蝕を防止するためには、ＡｌＦ３を除去し
表面に水に溶解しない安定な不動態膜を形成してやれば
良いことになる。本発明は、極めて効率良くアルミナ膜
を表面に形成することができるため、腐蝕を防止するこ
とができるのである。In order to prevent such corrosion, it is sufficient to remove AlF3 and form a stable passive film on the surface that does not dissolve in water. Since the present invention can form an alumina film on the surface extremely efficiently, corrosion can be prevented.
（実施例）
以下、本発明の詳−細を図示の実施例によって説明する
。(Example) Hereinafter, the details of the present invention will be explained by referring to the illustrated example.
第１図は本発明の一実施例方法に使用した表面処理装置
を示す概略構成図である。図中１１は真空容器１１であ
り、この容器１１内には加熱又は冷却が可能な試料台１
２が設けられており、さらに容器１１にはガス導入管１
３及び光導入窓１４が設けられている。また、容器１１
に石英製の放電管１５が接続されており、この放電管１
５にはマイクロ波電源１６から出力されたマスクロ波が
導波管１７．アプリケータ１８を介して印加され、マイ
クロ波放電を起こすものとなっている。また、必要に応
じて光を照射できるように、レーザ光源１９が設けられ
ている。FIG. 1 is a schematic diagram showing a surface treatment apparatus used in a method according to an embodiment of the present invention. In the figure, 11 is a vacuum container 11, and inside this container 11 is a sample stage 1 that can be heated or cooled.
2 is provided, and the container 11 is further provided with a gas introduction pipe 1.
3 and a light introduction window 14 are provided. In addition, container 11
A discharge tube 15 made of quartz is connected to the discharge tube 1.
The mask wave output from the microwave power source 16 is transmitted to the waveguide 17.5. It is applied via the applicator 18 to cause microwave discharge. Further, a laser light source 19 is provided so that light can be irradiated as needed.
前記第６図を用いて説明したのと同じ構造を持つ３層レ
ジストマスクで、厚さ０．８μｍのＡｌ−５ｉ−Ｃｕ合
金の選択エツチングを行った。エツチングが終了した段
階では、マスクとしては、下層のレジストが残っており
、またその両側面にフェンスが形成されている。この試
料を、１％ＨＦ水溶液に３０秒浸してフェンスを除去す
る。その後、メチルアルコール中に浸して水分を流し、
ドライ窒素を吹付けて乾燥する。Selective etching of an Al-5i-Cu alloy with a thickness of 0.8 .mu.m was performed using a three-layer resist mask having the same structure as explained using FIG. 6 above. At the stage where etching is completed, the lower layer of resist remains as a mask, and fences are formed on both sides of the mask. The sample is immersed in a 1% HF aqueous solution for 30 seconds to remove the fence. Then, soak it in methyl alcohol to drain the moisture.
Blow dry with dry nitrogen.
次に、上記乾燥させた試料を半分に切断し、−方はその
ままにしておき、他方は第１図に示した装置の容器１１
内に入れて処理した。即ち、容器１１内を予め真空に引
いた後、酸素を放電管１５に３０ｓｃｃａ＋の流量で導
入し、一方言器につながったガス導入管１３からは、水
素をｔｏｓｃｃｍの流量で導入して圧力を０．４Ｔｏｒ
ｒに保ち、マイクロ波を印加して放電させる。この処理
を５分間行い、試料２０を容器１１から取出す。この試
料２０と、何もせず放置したままの試料とを水洗処理し
、水洗時間に対する腐蝕発生頻度を時間に対して調べた
結果が第２図である。何もせず放置しただけの試料では
腐蝕が発生しているのに対し、本発明の処理を施した試
料では腐蝕は全く発生していないのが明らかである。Next, cut the dried sample in half, leave the - half as it is, and cut the other half into the container 11 of the apparatus shown in FIG.
I put it inside and processed it. That is, after the inside of the container 11 has been evacuated in advance, oxygen is introduced into the discharge tube 15 at a flow rate of 30 scca+, and hydrogen is introduced at a flow rate of tosccm from the gas introduction tube 13 connected to the syringe to increase the pressure. 0.4 Tor
The temperature is maintained at r, and microwaves are applied to discharge. This treatment is performed for 5 minutes, and then the sample 20 is taken out from the container 11. This sample 20 and the sample that had been left untouched were washed with water, and the frequency of occurrence of corrosion was investigated with respect to the washing time. The results are shown in FIG. It is clear that corrosion occurs in the sample that has been left untouched, whereas no corrosion occurs in the sample that has been treated according to the present invention.
また、付属の設備であるレーザ光源１９を用いて、１９
３ｒｖの短波長光を照・射しＡＩＦ、を光分解した後、
上記と同様の処理を施すと、更に短時間で同様の腐蝕防
止効果が得られた。In addition, using the laser light source 19 which is an attached equipment, 19
After photodegrading AIF by irradiating it with 3rv short wavelength light,
When the same treatment as above was applied, the same corrosion prevention effect was obtained in a shorter time.
かくして本実施例方法によれば、Ａｌ−５ｉ−Ｃｕ合金
を選択エツチングした後に希ＨＦでフェンス除去の処理
を施された試料を、酸素（活性化された酸素ラジカル）
と水素との混合ガス雰囲気中に晒すことにより、Ａｌ−
３ｔ−Ｃｕ合金の表面にＡ１□０３を形成することがで
きる。従って、その後に続く水洗処理でＡｌ−５ｉ−Ｃ
ｕからなる配線に腐蝕が発生するのを未然に防止するこ
とができ、腐蝕に起因する断線をなくし、配線の信頼性
向上をはかることができる。Thus, according to the method of this embodiment, a sample that has been subjected to selective etching of an Al-5i-Cu alloy and then subjected to fence removal treatment with dilute HF is exposed to oxygen (activated oxygen radicals).
By exposing Al-
A1□03 can be formed on the surface of the 3t-Cu alloy. Therefore, in the subsequent water washing treatment, Al-5i-C
It is possible to prevent corrosion from occurring in the wiring made of u, eliminate disconnections caused by corrosion, and improve the reliability of the wiring.
第３図は本発明の他の実施例方法に使用した表面処理装
置を示す概略構成図である。石英製の円筒型真空容器３
１に、２系統のガス導入管３２゜３３が接続されている
。ガス導入管３２．３３の一方からは酸素、他方からは
水又は水素が導入される。試料４０は、石英製のボート
３４上に置がれる。また、円筒容器３１の外側には電極
（図示せず）が設けられており、この電極に高周波電力
を印加することにより、容器３１内でプラズマを精製す
るものとなっている。FIG. 3 is a schematic configuration diagram showing a surface treatment apparatus used in another embodiment method of the present invention. Cylindrical vacuum container made of quartz 3
1, two systems of gas introduction pipes 32 and 33 are connected. Oxygen is introduced from one of the gas introduction pipes 32 and 33, and water or hydrogen is introduced from the other. The sample 40 is placed on a boat 34 made of quartz. Further, an electrode (not shown) is provided on the outside of the cylindrical container 31, and plasma is purified within the container 31 by applying high frequency power to this electrode.
前述した希ＨＦ処理後の試料を第３図に示す装置の容器
３１内に入れ、容器３１内に酸素を３０５ｃｃＩ１１導
入し、更に水を導入して圧力がＩ Ｔｏｒｒになるよう
にする。次いで、５００′ｌｄの高周波電力を印加し、
１５分間処理する。このようにした試料を水洗処理し、
腐蝕の発生を調べたところ、腐蝕は全く発生していない
ことが明らかとなった。また、この装置の場合は、水又
は水素と酸素を同一のガス導入管から導入しても同様の
効果があることが明らかとなった。The sample subjected to the dilute HF treatment described above is placed in a container 31 of the apparatus shown in FIG. 3, and 305 ccI11 of oxygen is introduced into the container 31, and water is further introduced to bring the pressure to I Torr. Then, 500'ld of high frequency power was applied,
Process for 15 minutes. The sample thus prepared was washed with water,
When the occurrence of corrosion was investigated, it became clear that no corrosion had occurred at all. Furthermore, in the case of this device, it has become clear that the same effect can be obtained even if water or hydrogen and oxygen are introduced through the same gas introduction pipe.
なお、本発明は上述した各実施例に限定されるものでは
ない。例えば、被処理基体の配線材料はＡｌ−５ｔ−Ｃ
ｕに限るものではなく、Ａｌ−３ｉ又はＡｌであっても
同様の効果が得られる。Note that the present invention is not limited to each of the embodiments described above. For example, the wiring material of the substrate to be processed is Al-5t-C.
The material is not limited to u, and similar effects can be obtained with Al-3i or Al.
つまり、配線材料としてはＡＩ又はＡ１を含む合金を用
いることが可能である。但し、Ａｌ−５ｉ−Ｃｕは前述
した希弗酸処理後の水洗処理による腐蝕が最も激しいの
で、本発明はＡ ｌ−Ｓｉ −Ｃｕを配線材料とした場
合に最も有効である。また、フェンス除去の処理として
は希弗酸に限るものではなく、弗素ガスの放電によるプ
ラズマを利用してもよい。さらに、酸素の活性化手段と
しては、マイクロ波放電に限らず、熱、荷電粒子ビーム
及び光等を用いることが可能である。その他、本発明の
要旨を逸脱しない範囲で、種々変形して実施することが
できる。That is, it is possible to use AI or an alloy containing A1 as the wiring material. However, since Al-5i-Cu is most severely corroded by the water washing treatment after the dilute hydrofluoric acid treatment described above, the present invention is most effective when Al-Si-Cu is used as the wiring material. Furthermore, the process for removing the fence is not limited to dilute hydrofluoric acid, and plasma generated by fluorine gas discharge may also be used. Furthermore, as means for activating oxygen, it is possible to use not only microwave discharge but also heat, a charged particle beam, light, and the like. In addition, various modifications can be made without departing from the gist of the present invention.
［発明の効果］
以上詳述したように本発明によれば、酸素と水蒸気又は
水素とを含む雰囲気中で処理して、配線の表面に酸化膜
を形成することにより、フェンス除去のための希弗酸処
理後の水洗処理における配線の腐蝕を防止することがで
きる。従って、配線の信頼性向上をはかることができ、
半導体装置に製造に適用して有効な効果が得られる。[Effects of the Invention] As described in detail above, according to the present invention, by forming an oxide film on the surface of the wiring by processing in an atmosphere containing oxygen and water vapor or hydrogen, it is possible to remove the fence. Corrosion of wiring during washing with water after hydrofluoric acid treatment can be prevented. Therefore, it is possible to improve the reliability of wiring,
Effective effects can be obtained when applied to the manufacturing of semiconductor devices.
第１図は本発明の一実施例方法に使用した表面処理装置
を示す概略構成図、第２図は上記実施例方法の効果を説
明するためのもので水洗時間に対する腐蝕頻度の変化を
示す特性図、第３図は本発明の他の実施例方法に使用し
た表面処理装置を示す概略構成図、第４図及び第５図は
本発明の詳細な説明するためのもうで水洗時間に対する
腐蝕頻度の変化を示す特性図１．第６図は従来の問題点
を説明するための断面図である。
１１・・・真空容器、１２・・・試料台、１３・・・ガ
ス導入管、１４・・・光導入窓、１５・・・放電管、１
６・・・マイクロ波電源、１７・・・導波管、１８・・
・アプリケータ、１９・・・レーザ光源、２０・・・試
料（被処理基体）。
出願人代理人 弁理士 鈴江武彦
第２図
第３図
ＷＸ４図Fig. 1 is a schematic configuration diagram showing a surface treatment equipment used in an embodiment method of the present invention, and Fig. 2 is a diagram for explaining the effects of the above embodiment method, and shows characteristics showing changes in corrosion frequency with water washing time. 3 is a schematic configuration diagram showing a surface treatment apparatus used in another embodiment method of the present invention, and FIGS. 4 and 5 are for explaining the present invention in detail. Corrosion frequency with respect to water washing time Characteristic diagram 1 showing changes in . FIG. 6 is a sectional view for explaining the conventional problems. DESCRIPTION OF SYMBOLS 11... Vacuum container, 12... Sample stand, 13... Gas introduction tube, 14... Light introduction window, 15... Discharge tube, 1
6...Microwave power supply, 17...Waveguide, 18...
- Applicator, 19... Laser light source, 20... Sample (substrate to be processed). Applicant's agent Patent attorney Takehiko Suzue Figure 2 Figure 3 WX4 Figure
Claims (2)
からなる配線を形成した被処理基体を弗素ガス又は希弗
酸で処理した後、該被処理基体を酸素原子と水蒸気又は
少なくとも水素原子を含むガス雰囲気中に晒して配線の
表面を酸化し、しかるのち被処理基体を水洗処理するこ
とを特徴とする表面処理方法。(1) After treating a substrate on which a wiring made of aluminum or an alloy containing aluminum is formed on the surface with fluorine gas or dilute hydrofluoric acid, the substrate is placed in a gas atmosphere containing oxygen atoms and water vapor or at least hydrogen atoms. A surface treatment method characterized by oxidizing the surface of a wiring by exposing it to water, and then washing the substrate to be treated with water.
、レジストをマスクとした選択エッチングにより加工形
成されることを特徴とする請求項１記載の表面処理方法
。(2) The surface treatment method according to claim 1, wherein the wiring is made of Al-Si-Cu and is formed by selective etching using a resist as a mask.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7870688A JPH01251742A (en) | 1988-03-31 | 1988-03-31 | Surface treatment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7870688A JPH01251742A (en) | 1988-03-31 | 1988-03-31 | Surface treatment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01251742A true JPH01251742A (en) | 1989-10-06 |
Family
ID=13669309
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7870688A Pending JPH01251742A (en) | 1988-03-31 | 1988-03-31 | Surface treatment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01251742A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0489179A1 (en) * | 1990-06-27 | 1992-06-10 | Fujitsu Limited | Method of manufacturing semiconductor integrated circuit and equipment for the manufacture |
| JP2002151502A (en) * | 2000-10-31 | 2002-05-24 | Applied Materials Inc | Method and apparatus for forming oxide film and substrate product |
-
1988
- 1988-03-31 JP JP7870688A patent/JPH01251742A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0489179A1 (en) * | 1990-06-27 | 1992-06-10 | Fujitsu Limited | Method of manufacturing semiconductor integrated circuit and equipment for the manufacture |
| JP2002151502A (en) * | 2000-10-31 | 2002-05-24 | Applied Materials Inc | Method and apparatus for forming oxide film and substrate product |
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