JPH01244326A - Pressure sensor - Google Patents
Pressure sensorInfo
- Publication number
- JPH01244326A JPH01244326A JP7251388A JP7251388A JPH01244326A JP H01244326 A JPH01244326 A JP H01244326A JP 7251388 A JP7251388 A JP 7251388A JP 7251388 A JP7251388 A JP 7251388A JP H01244326 A JPH01244326 A JP H01244326A
- Authority
- JP
- Japan
- Prior art keywords
- pressure sensor
- pressure
- sensor chip
- chip
- package
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 description 18
- 238000005259 measurement Methods 0.000 description 11
- 239000011347 resin Substances 0.000 description 9
- 229920005989 resin Polymers 0.000 description 9
- 239000002184 metal Substances 0.000 description 8
- 230000005540 biological transmission Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
Landscapes
- Measuring Fluid Pressure (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は圧力を電気信号に変換する圧力センサの構造に
関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to the structure of a pressure sensor that converts pressure into an electrical signal.
従来の技術
近年、気体用圧力センサは、測定媒体である気体の圧力
を圧力センサチップへ正確に伝達する手段として種々そ
の構成が検討されてきた結果、第４図の断面図に示す様
な構造が採用されている。BACKGROUND OF THE INVENTION In recent years, various configurations of gas pressure sensors have been studied as a means of accurately transmitting the pressure of gas as a measurement medium to a pressure sensor chip, and as a result, a structure as shown in the cross-sectional view of FIG. 4 has been developed. has been adopted.
第４図において４１は圧力を電気信号に変換する圧力セ
ンサチップ、４２は圧力センサチップ４１を収納載置す
るパッケージ、４３は圧力センサチップ４１の電源入出
力電極となるリード端子、４４は圧力センサチップ４１
とリード端子４３を電気的に接続するワイヤーである。In FIG. 4, 41 is a pressure sensor chip that converts pressure into an electrical signal, 42 is a package that houses and mounts the pressure sensor chip 41, 43 is a lead terminal that serves as a power input/output electrode for the pressure sensor chip 41, and 44 is a pressure sensor. chip 41
This is a wire that electrically connects the lead terminal 43 and the lead terminal 43.
以上のように構成された圧力センサは、測定媒体である
気体が矢印入方向へ圧力を加えた場合、パッケージ４２
内の密封性により、前記気体の圧力が圧力センサチップ
４１の受圧面に伝達され、圧力センサチップ４１が該圧
力を電気信号に変換するものである。In the pressure sensor configured as described above, when the gas that is the measurement medium applies pressure in the direction of the arrow, the package 42
Due to the sealing property inside, the pressure of the gas is transmitted to the pressure receiving surface of the pressure sensor chip 41, and the pressure sensor chip 41 converts the pressure into an electrical signal.
発明が解決しようとする課題
しかしながら上記の従来の構成では、圧力センサチップ
を収納載置し、測定媒体である気体の圧力を前記圧力セ
ンサチップへ伝達するパッケージが、剛性不足の為に測
定媒体以外の外部圧力、例えば矢印Ｂ方向からかかる前
記圧力センサチップへの応力を十分緩和できず測定に誤
差や狂いが生じ測定精度の信頼性に欠けるという問題点
を有していた。本発明は上記従来の問題点を解決するも
ので、測定媒体以外の外部圧力が加わった場合に、圧力
センサチソプへの応力を緩和することが可能な圧力セン
サを提供することを目的とする。Problems to be Solved by the Invention However, in the above-mentioned conventional configuration, the package that houses and mounts the pressure sensor chip and transmits the pressure of gas, which is the measurement medium, to the pressure sensor chip is insufficient in rigidity, so that the package other than the measurement medium This method has a problem in that the external pressure, for example, the stress applied to the pressure sensor chip from the direction of arrow B, cannot be sufficiently alleviated, resulting in errors and deviations in measurement, resulting in a lack of reliability in measurement accuracy. The present invention solves the above-mentioned conventional problems, and aims to provide a pressure sensor that can relieve stress on the pressure sensor when external pressure other than the measurement medium is applied.
課題を解決するだめの手段
この目的を達成するために本発明の圧力センサは、圧力
センサチップとパッケージとの間に緩衝体を備えだ構成
を有している。Means for Solving the Problems To achieve this object, the pressure sensor of the present invention has a structure in which a buffer is provided between the pressure sensor chip and the package.
作用
この構成によって、圧力センサの剛性が増し、測定媒体
以外の外部圧力が加わった場合でも圧力センサチノプへ
の応力は、最少限に緩和され測定精度の向上を図ること
ができる。Effect: With this configuration, the rigidity of the pressure sensor is increased, and even when external pressure other than the measurement medium is applied, stress on the pressure sensor tip is minimized, and measurement accuracy can be improved.
実施例
以下本発明の一実施例について、図面を参照しながら説
明する。EXAMPLE An example of the present invention will be described below with reference to the drawings.
第１図は、本発明の第１の実施例における半導体圧力セ
ンサの断面図を示すものである。FIG. 1 shows a cross-sectional view of a semiconductor pressure sensor according to a first embodiment of the present invention.
第１図において、１は圧力を電気信号に変換する半導体
圧力センサチップ、２は半導体圧力センサチノプ１を収
納載置する樹脂パッケージ、３は半導体圧力センサチソ
プ１の電源入出力電極となるリード端子、４は半導体圧
力センサチップ１とリード端子３を電気的に接続するボ
ンディングワイヤー、５は半導体圧力センサチソプ１と
樹脂パッケージ２０間に備えた緩衝体としてのメタル基
台である。In FIG. 1, 1 is a semiconductor pressure sensor chip that converts pressure into an electric signal, 2 is a resin package that houses and mounts the semiconductor pressure sensor chip 1, 3 is a lead terminal that serves as a power input/output electrode for the semiconductor pressure sensor chip 1, and 4 5 is a bonding wire that electrically connects the semiconductor pressure sensor chip 1 and the lead terminal 3, and 5 is a metal base as a buffer provided between the semiconductor pressure sensor chip 1 and the resin package 20.
以上のように半導体圧力センサを構成することによυ、
測定媒体以外の外部圧力、例えば矢印Ｂ方向へ圧力をか
けた場合に、樹脂パッケージ２とメタル基台６が外部圧
力を緩和するため、半導体圧力センサチップ１には、は
とんど応力を伝えることがない。By configuring the semiconductor pressure sensor as described above, υ,
When external pressure other than the measurement medium is applied, for example, pressure in the direction of arrow B, the resin package 2 and the metal base 6 relieve the external pressure, so that the stress is mostly transmitted to the semiconductor pressure sensor chip 1. Never.
なお、第２図、第３図の断面図で示されるように、半導
体圧力センサチップへ応力が伝わるのをさらに緩和する
ために樹脂パッケージとメタル基台との間に空間部を設
けた構造としても良く、以下にその実施例について説明
する。In addition, as shown in the cross-sectional views of FIGS. 2 and 3, a space is provided between the resin package and the metal base in order to further reduce the stress transmitted to the semiconductor pressure sensor chip. Examples thereof will be described below.
第２図において、メタル基台６には脚部５＆が設けられ
、樹脂パッケージ２との間に空間部６を設けることによ
υ、外部圧力によって半導体圧力センサチソプ１へ応力
が伝わるのを緩和している。In FIG. 2, the metal base 6 is provided with legs 5&, and by providing a space 6 between it and the resin package 2, the stress transmitted to the semiconductor pressure sensor 1 due to external pressure is alleviated. ing.
まだ、第３図においては、樹脂パッケージ２の内底部に
凹部２ａが設けられ、凹部２ａの上部にメタル基台６が
載置されて空間部６が形成されている。Still, in FIG. 3, a recess 2a is provided at the inner bottom of the resin package 2, and a metal base 6 is placed on top of the recess 2a to form a space 6.
以上のように半導体圧力センサチソデと樹脂パッケージ
との間にメタル基台を設け、又樹脂パッケージとメタル
基台との間に空間部を設けることによシ、外部圧力によ
る半導体圧力センサチップへの応力伝達を緩和すること
ができ、半導体圧力センサによる気体圧力の検知精度を
高めることができる。As described above, by providing a metal base between the semiconductor pressure sensor chip and the resin package, and by providing a space between the resin package and the metal base, stress on the semiconductor pressure sensor chip due to external pressure can be reduced. The transmission can be relaxed, and the accuracy of gas pressure detection by the semiconductor pressure sensor can be improved.
発明の効果
以上のように本発明は、圧力センサチップとパッケージ
との間に緩衝体を備えることにより、又圧力センサチッ
プを載置した緩衝体とパッケージの間に空間部を設ける
ことによシ、測定媒体以外の外部圧力がパッケージに加
わった場合でも、圧力センサチップへの応力伝達が緩和
される為、気体圧力の測定を十分な精度で行うことがで
きる優れた圧力センサを実現できるものである。Effects of the Invention As described above, the present invention provides a system by providing a buffer between the pressure sensor chip and the package, and by providing a space between the buffer on which the pressure sensor chip is mounted and the package. Even when external pressure other than the measurement medium is applied to the package, stress transmission to the pressure sensor chip is alleviated, making it possible to create an excellent pressure sensor that can measure gas pressure with sufficient accuracy. be.
第１図は本発明の第１の実施例における半導体圧力セン
サの断面図、第２図は本発明の第２の実施例における半
導体圧力センサの断面図、第３図は本発明の第３の実施
例における半導体圧力センサの断面図、第４図は従来の
圧力センサの断面図である。
１・・・・・・半導体圧力センサチップ、２・・・・・
・樹脂パッケージ、３・・・・・・リード端子、４・・
・・・・ボンディングワイヤー、６・・・・・・メタル
基台、６・・・・・・空間部。
代理人の氏名 弁理士 中 尾 敏 男 ほか１名ハ
Ｓ−・−メタノン１叩合第３図
八
口
δ
第４図 い1 is a sectional view of a semiconductor pressure sensor according to a first embodiment of the present invention, FIG. 2 is a sectional view of a semiconductor pressure sensor according to a second embodiment of the present invention, and FIG. 3 is a sectional view of a semiconductor pressure sensor according to a third embodiment of the present invention. A cross-sectional view of the semiconductor pressure sensor in the embodiment, and FIG. 4 is a cross-sectional view of a conventional pressure sensor. 1... Semiconductor pressure sensor chip, 2...
・Resin package, 3...Lead terminal, 4...
...Bonding wire, 6...Metal base, 6...Space part. Name of agent: Patent attorney Toshio Nakao and one other person
S-・-methanone 1 combination Fig. 3 Yaguchi δ Fig. 4
Claims (2)
前記圧力センサチップを収納載置するパッケージとの間
に緩衝体を備えたことを特徴とする圧力センサ。(1) A pressure sensor chip that converts pressure into an electrical signal,
A pressure sensor comprising a buffer between the pressure sensor chip and a package in which the pressure sensor chip is housed and mounted.
求の範囲第１項記載の圧力センサ。(2) The pressure sensor according to claim 1, wherein a space is provided between the buffer and the package.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7251388A JPH01244326A (en) | 1988-03-25 | 1988-03-25 | Pressure sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7251388A JPH01244326A (en) | 1988-03-25 | 1988-03-25 | Pressure sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01244326A true JPH01244326A (en) | 1989-09-28 |
Family
ID=13491496
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7251388A Pending JPH01244326A (en) | 1988-03-25 | 1988-03-25 | Pressure sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01244326A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5444286A (en) * | 1993-02-04 | 1995-08-22 | Mitsubishi Denki Kabushiki Kaisha | Packaged semiconductor pressure sensor including lead supports within the package |
-
1988
- 1988-03-25 JP JP7251388A patent/JPH01244326A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5444286A (en) * | 1993-02-04 | 1995-08-22 | Mitsubishi Denki Kabushiki Kaisha | Packaged semiconductor pressure sensor including lead supports within the package |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5524423A (en) | Semiconductor pressure sensor | |
| JP2719448B2 (en) | Semiconductor pressure detector | |
| JPH01244326A (en) | Pressure sensor | |
| US4400682A (en) | Pressure sensor | |
| JPH0582696A (en) | Lead frame of semiconductor device | |
| JP2002039887A (en) | Semiconductor dynamic quantity sensor and method of manufacturing it | |
| JPH04370727A (en) | Manufacture of semiconductor pressure sensor | |
| JPH11132885A (en) | Pressure detector | |
| JPS59174728A (en) | Semiconductor type pressure sensor | |
| JPH10274583A (en) | Semiconductor pressure sensor | |
| JPH073311Y2 (en) | Semiconductor differential pressure measuring device | |
| JP4103227B2 (en) | Pressure sensor | |
| JPS6116702Y2 (en) | ||
| JPS6327724A (en) | Semiconductor pressure sensor | |
| JPS5850443A (en) | Pressure-electricity transducer | |
| JPS638523A (en) | Semiconductor pressure sensor | |
| JPH04313061A (en) | Semiconductor acceleration sensor | |
| JPH06148014A (en) | Semiconductor pressure sensor | |
| JPH09189629A (en) | Absolute pressure sensor | |
| JPH04312980A (en) | Semiconductor pressure sensor | |
| JPH04206778A (en) | Semiconductor acceleration detector | |
| JPH10325771A (en) | Semiconductor pressure sensor | |
| JPS63177030A (en) | Semiconductive pressure sensor | |
| JPH08193898A (en) | Package assembling structure for semiconductor pressure sensor | |
| JPS6015644U (en) | pressure transducer |