JPH01196863A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPH01196863A JPH01196863A JP63022195A JP2219588A JPH01196863A JP H01196863 A JPH01196863 A JP H01196863A JP 63022195 A JP63022195 A JP 63022195A JP 2219588 A JP2219588 A JP 2219588A JP H01196863 A JPH01196863 A JP H01196863A
- Authority
- JP
- Japan
- Prior art keywords
- film
- films
- silicon
- polycrystalline
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 26
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 9
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 8
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 4
- 239000011733 molybdenum Substances 0.000 claims abstract description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 3
- 239000000956 alloy Substances 0.000 claims abstract description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 3
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 3
- 239000010937 tungsten Substances 0.000 claims abstract description 3
- 238000010030 laminating Methods 0.000 claims abstract 2
- 230000008018 melting Effects 0.000 claims description 2
- 238000002844 melting Methods 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- WNUPENMBHHEARK-UHFFFAOYSA-N silicon tungsten Chemical compound [Si].[W] WNUPENMBHHEARK-UHFFFAOYSA-N 0.000 claims description 2
- GALOTNBSUVEISR-UHFFFAOYSA-N molybdenum;silicon Chemical compound [Mo]#[Si] GALOTNBSUVEISR-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 238000010276 construction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、半導体固定記すα装置におけるダイオード・
アレーの構造に関する。[Detailed Description of the Invention] [Industrial Field of Application] The present invention relates to a diode/
Concerning the structure of the array.
従来技術による半導体固定記ｔａ Ｈ置におけるダイオ
ードＪＲ造を第２図に示す。すなわち、半ξ体基板１１
０表面には酸化膜１２が形成され、該酸化ｖ：１２の表
面にはＮ型多結晶５ｉ１３及びＰ型多結晶５ｉ１４が格
子状に形成されて、縦型ダイオードを形成し、その上に
居間絶縁膜１５を介して、アルミ配線１６が形成されて
成るのが通例であった。FIG. 2 shows a diode JR construction in a semiconductor fixed device according to the prior art. That is, the semi-ξ body substrate 11
An oxide film 12 is formed on the surface of the oxide V:12, and N-type polycrystals 5i13 and P-type polycrystals 5i14 are formed in a lattice shape on the surface of the oxide v:12 to form a vertical diode. Usually, aluminum wiring 16 was formed with an insulating film 15 interposed therebetween.
しかし、上記従来技術によると、多結晶Ｓｉによる配線
抵抗が太き（、半導体内定記ｆα装置の高速化に向かな
いという問題点があった。However, according to the above-mentioned prior art, there is a problem that the wiring resistance due to polycrystalline Si is large (and is not suitable for increasing the speed of a semiconductor internally defined fα device).
本発明は、かかる従来技術の問題点をなくし、半容体固
定記ｆα装置における多結晶半導体膜又はアモルファス
半導体膜による縦型ダイオードの配線Ｉ（抗を小さくシ
、高速化を図る事を目的とする。The present invention eliminates the problems of the prior art, and aims to reduce the resistance and increase the speed of vertical diode wiring I using a polycrystalline semiconductor film or an amorphous semiconductor film in a half-capacity fixed recording fα device. .
上記問題点を解決するために、本発明は、半導体装置に
関し、半導体基板上に酸化硅素等の絶縁膜を形成し、該
絶縁膜上に多結晶硅素やアモルファス硅素等の多結晶半
導体膜やアモルファス半導体膜の積層による縦型ダイオ
ードを形成するに際し、少くとも絶縁膜上にタンゲステ
ン硅素やモリプデ／硅素等のシリサイド膜かタングステ
ンやモリブデン等の高融点金属膜又は合金膜から成る導
電膜を形成し、該導電膜上に前記縦型ダイオードを形成
する手段をとる。In order to solve the above problems, the present invention relates to a semiconductor device, in which an insulating film such as silicon oxide is formed on a semiconductor substrate, and a polycrystalline semiconductor film such as polycrystalline silicon or amorphous silicon, or an amorphous semiconductor film such as polycrystalline silicon or amorphous silicon is formed on the insulating film. When forming a vertical diode by stacking semiconductor films, a conductive film made of a silicide film such as tungsten silicon or molybdenum/silicon, a high melting point metal film such as tungsten or molybdenum, or an alloy film is formed at least on the insulating film, Means is taken to form the vertical diode on the conductive film.
以下、実施例により本発明を詳述する。 Hereinafter, the present invention will be explained in detail with reference to Examples.
第１図は本発明の一実施例を示す半導体固定記憶装置に
おけるダイオードの構造図である。すなわち、半導体基
板１０表面には酸化膜２を形成し、該酸化ｖ：２の表面
にＷＳｉ等から成るシリサイドｖ：３及びＮ型多結晶Ｓ
ｉ４を形成し、層間絶縁膜５を介して、Ｐ型多結晶Ｓｉ
８及びＷＳｉ等から成るシリサイド膜７ｇアルミ配線８
が形成され、Ｎ型多結晶Ｓｉ４とＰｆｆｉ多結品５ｉｆ
３とが格子状に配されて、その交点に縦型ダイオードが
形成されて成る構成となる。FIG. 1 is a structural diagram of a diode in a semiconductor fixed memory device showing an embodiment of the present invention. That is, an oxide film 2 is formed on the surface of the semiconductor substrate 10, and silicide v:3 made of WSi or the like and N-type polycrystalline S are formed on the surface of the oxide v:2.
i4 and P-type polycrystalline Si through the interlayer insulating film 5.
8 and a silicide film made of WSi, etc. 7g aluminum wiring 8
is formed, N-type polycrystalline Si4 and Pffi polycrystalline product 5if
3 are arranged in a grid pattern, and vertical diodes are formed at the intersections.
本発明により多結晶半導体膜又はアモルファス半導体膜
による配線の抵抗をシリサイド膜で小さ（することがで
き、高速化を図ることができる効果がある。According to the present invention, the resistance of wiring made of a polycrystalline semiconductor film or an amorphous semiconductor film can be reduced by using a silicide film, and there is an effect that speeding up can be achieved.
第１図は本発明の一実施例を示す半導体固定記憶装置の
ダイオード・アレ一部の断面図であり、第２図は従来技
術による半導体固定記憶装置のダイオード・アレ一部の
断面図である。
１．１１・・・半導体基板
２．１２・・・酸化膜
３．７・・・シリサイド膜
４．１３・・・Ｎ型多結晶Ｓｉ
５．１５・・・層間絶縁膜
６．１４・・・Ｐ型多結品Ｓｉ
８．１６・・・アルミ配線
以 上FIG. 1 is a cross-sectional view of a portion of a diode array of a semiconductor fixed memory device showing an embodiment of the present invention, and FIG. 2 is a cross-sectional view of a portion of a diode array of a semiconductor fixed memory device according to the prior art. . 1.11... Semiconductor substrate 2.12... Oxide film 3.7... Silicide film 4.13... N-type polycrystalline Si 5.15... Interlayer insulating film 6.14... P-type multi-connected Si 8.16...Aluminum wiring or higher
Claims (1)
該絶縁膜上に多結晶硅素やアモルファス硅素等の多結晶
半導体膜やアモルファス半導体膜の積層による縦型ダイ
オードを形成する際に、少くとも絶縁膜上にはタングス
テン硅素やモリブデン硅素等のシリサイド膜からタング
ステンやモリブデン等の高融点金属膜又は合金膜から成
る導電膜が形成され、該導電膜上に前記縦型ダイオード
が形成されて成る事を特徴とする半導体装置。An insulating film such as a silicon oxide film is formed on the semiconductor substrate,
When forming a vertical diode by laminating a polycrystalline semiconductor film or an amorphous semiconductor film such as polycrystalline silicon or amorphous silicon on the insulating film, at least a silicide film such as tungsten silicon or molybdenum silicon is used on the insulating film. 1. A semiconductor device comprising: a conductive film made of a high melting point metal film or an alloy film such as tungsten or molybdenum; and the vertical diode formed on the conductive film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63022195A JPH01196863A (en) | 1988-02-02 | 1988-02-02 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63022195A JPH01196863A (en) | 1988-02-02 | 1988-02-02 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01196863A true JPH01196863A (en) | 1989-08-08 |
Family
ID=12076017
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63022195A Pending JPH01196863A (en) | 1988-02-02 | 1988-02-02 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01196863A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0550171A2 (en) * | 1991-12-30 | 1993-07-07 | AT&T Corp. | Integrated circuit with silicon contact to silicide |
| WO1997032340A1 (en) * | 1996-03-01 | 1997-09-04 | Micron Technology, Inc. | Novel vertical diode structures with low series resistance |
| US7166875B2 (en) | 1996-03-01 | 2007-01-23 | Micron Technology, Inc. | Vertical diode structures |
| CN104021975A (en) * | 2013-02-28 | 2014-09-03 | 西门子公司 | Embedded pole and deflector |
-
1988
- 1988-02-02 JP JP63022195A patent/JPH01196863A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0550171A2 (en) * | 1991-12-30 | 1993-07-07 | AT&T Corp. | Integrated circuit with silicon contact to silicide |
| US5591674A (en) * | 1991-12-30 | 1997-01-07 | Lucent Technologies Inc. | Integrated circuit with silicon contact to silicide |
| WO1997032340A1 (en) * | 1996-03-01 | 1997-09-04 | Micron Technology, Inc. | Novel vertical diode structures with low series resistance |
| US7166875B2 (en) | 1996-03-01 | 2007-01-23 | Micron Technology, Inc. | Vertical diode structures |
| US7170103B2 (en) | 1996-03-01 | 2007-01-30 | Micron Technology, Inc. | Wafer with vertical diode structures |
| US7279725B2 (en) | 1996-03-01 | 2007-10-09 | Micron Technology, Inc. | Vertical diode structures |
| US7563666B2 (en) | 1996-03-01 | 2009-07-21 | Micron Technology, Inc. | Semiconductor structures including vertical diode structures and methods of making the same |
| US8034716B2 (en) | 1996-03-01 | 2011-10-11 | Micron Technology, Inc. | Semiconductor structures including vertical diode structures and methods for making the same |
| CN104021975A (en) * | 2013-02-28 | 2014-09-03 | 西门子公司 | Embedded pole and deflector |
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