JPH01184914A - Solid electrolytic capacitor - Google Patents

Solid electrolytic capacitor

Info

Publication number
JPH01184914A
JPH01184914A JP983088A JP983088A JPH01184914A JP H01184914 A JPH01184914 A JP H01184914A JP 983088 A JP983088 A JP 983088A JP 983088 A JP983088 A JP 983088A JP H01184914 A JPH01184914 A JP H01184914A
Authority
JP
Japan
Prior art keywords
water
metal wire
valve
repellent plate
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP983088A
Other languages
Japanese (ja)
Inventor
Minoru Omori
実 大森
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP983088A priority Critical patent/JPH01184914A/en
Publication of JPH01184914A publication Critical patent/JPH01184914A/en
Pending legal-status Critical Current

Links

Landscapes

  • Spark Plugs (AREA)

Abstract

PURPOSE:To prevent the mechanical stress added to the base of the metal wire for valve action when a water-repellent plate is raised up and an assembling work is conducted by a method wherein an insulating member having a water-repellent property is fixed to the base part of the electrode body obtained by planting a valve-functioning metal wire on the valve-functioning metal powder, and also by molding and sintering, and a dielectric layer, a semiconductor layer and a cathode layer are formed. CONSTITUTION:A sintered body is welded to the belt-like metal plate 8 of stainless steel and the like so that the formation and assembling of a dielectric layer and a semiconductor layer can be conducted conveniently. At this time, a silicon bonding agent 7 is pinched between the water-repellent plate 2 and the sintered body while the water-repellent plate 2 is being inserted into the metal wire 6 having valve action. Subsequently, said materials have been closely fixed further, they are hardened by drying with a hot air drying device, then a dielectric layer and a semiconductor layer are formed, and an assembling work is conducted.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は固体電解コンデンサに関するものである。[Detailed description of the invention] Industrial applications The present invention relates to solid electrolytic capacitors.

従来の技術 従来のタンタル固体電解コンデンサ、特にチップ形タン
タル固体電解コンデンサは、第4図に示すような構成で
ある。すなわち、1は電極体、6は電極体1に埋め込ま
れている弁作用金属線、2は弁作用金属線に挿入されて
いる撥水性板である。
2. Description of the Related Art A conventional tantalum solid electrolytic capacitor, particularly a chip-type tantalum solid electrolytic capacitor, has a structure as shown in FIG. That is, 1 is an electrode body, 6 is a valve metal wire embedded in the electrode body 1, and 2 is a water-repellent plate inserted into the valve metal wire.

それらにコンデンサの陽極及び陰極の引出しとして陽極
引出し端子4と陰極引出し端子3が接続されておシ、そ
して全体を外装樹脂5により被覆し、陽極引出し端子4
及び陰極引出し端子3を外装樹脂5の両側面及び底面に
沿って折り曲げた構成である。
An anode lead terminal 4 and a cathode lead terminal 3 are connected to these as drawers for the anode and cathode of the capacitor, and the whole is covered with an exterior resin 5, and the anode lead terminal 4
Also, the cathode lead terminal 3 is bent along both side surfaces and the bottom surface of the exterior resin 5.

発明が解決しようとする課題 しかしながら、このような従来の撥水性板を弁作用金属
線に挿入しただけの構成では、誘電体層。
Problems to be Solved by the Invention However, in the conventional structure in which such a water-repellent plate is simply inserted into the valve metal wire, the dielectric layer cannot be removed.

半導体層を形成する際に撥水性板が弁作用金属線や電極
体面との密着が悪くなり、浮き上がってしまい、弁作用
金属線への半導体母液の這い上がり現象が起こってしま
う場合があシ、組立を行なうと漏れ電流不良や、最悪の
場合、短絡状態になシ、コンデンサとしての機能をはた
さなくなってしまう。
When forming a semiconductor layer, the water-repellent plate may not adhere well to the valve metal wire or the electrode body surface and may float, causing the semiconductor mother liquor to creep up onto the valve metal wire. When assembled, a leakage current may occur, or in the worst case, a short circuit may occur, causing the capacitor to no longer function as a capacitor.

また、撥水性板を弁作用金属線に挿入しただけでは、組
立時に加わってしまう弁作用金属線の根元への機械的ス
トレスは防げずに、これもまた漏れ電流不良になってし
まっていた。
Furthermore, simply inserting a water-repellent plate into the valve metal wire does not prevent mechanical stress on the base of the valve metal wire during assembly, which also results in leakage current failure.

本発明は、このような従来の課題を解決するためのもの
である。
The present invention is intended to solve such conventional problems.

課題を解決するだめの手段 そこで、本発明は、弁作用を有する金属粉末に弁作用を
有する金属線を植設して成形、焼結してなる電極体の前
記金属線を植設した根元部に撥水性を有する絶縁部材を
固着させ、誘電体層、半導体層、陰極層を形成するもの
である。
Means for Solving the Problems Therefore, the present invention provides a base portion of an electrode body in which a metal wire having a valve action is implanted into a metal powder having a valve action, and formed and sintered. A dielectric layer, a semiconductor layer, and a cathode layer are formed by fixing a water-repellent insulating member to the substrate.

作用 本発明は以上の構成によシ、撥水性板の浮き上がり及び
組立時の弁作用金属線の根元に加わる機械的ストレスを
防止することが出来る。
Operation The present invention can prevent lifting of the water-repellent plate and mechanical stress applied to the root of the valve action metal wire during assembly due to the above-described configuration.

実施例 以下本発明の一実施例を第1図〜第3図の図面を用いて
説明する。
EXAMPLE Hereinafter, an example of the present invention will be explained using the drawings of FIGS. 1 to 3.

第2図の様に誘電体層及び半導体層の形成及び組立に便
利なように焼結体をステンレス等の帯状の金属板8に溶
接するが、その時、弁作用金属線6に撥水性板2を挿入
しながら、撥水性板2と焼結体との間にシリコン系の接
着剤7をはさみ込む。
As shown in FIG. 2, the sintered body is welded to a belt-shaped metal plate 8 made of stainless steel or the like for convenience in forming and assembling the dielectric layer and the semiconductor layer. While inserting the silicon adhesive 7 between the water repellent plate 2 and the sintered body.

その後、さらに密着させた後、熱風乾燥器で約125’
C,10分〜16分硬化させた後、誘電体層、半導体層
を形成させ、組立を行い、第1図に示すチップ状のタン
タル電解コンデンサとした。
After that, after further adhesion, it is dried in a hot air dryer for about 125'
C. After curing for 10 to 16 minutes, a dielectric layer and a semiconductor layer were formed and assembled to form a chip-shaped tantalum electrolytic capacitor as shown in FIG.

ここで、チップタンタル定格16V、10μFの製品に
本発明を実施し、そして表1に撥水性板の浮き上がシネ
良の状況を、表2に組立時の機械的ストレスが弁作用金
属線の根元に加わシ漏れ電流(LC)が大きくなる組立
・完成不良率の状況を、また第3図に半田耐熱テスト(
半田デイツプ法260’C,10秒浸漬)の結果をそれ
ぞれ従来品と比較して示す。
Here, the present invention was implemented on a product with a chip tantalum rating of 16 V and 10 μF, and Table 1 shows the situation where the water repellent plate lifted up well and the mechanical stress during assembly was good. Figure 3 shows the situation of the assembly/completion defect rate where the leakage current (LC) applied to the root increases, and the solder heat resistance test (
The results of the solder dip method (260'C, 10 second immersion) are shown in comparison with conventional products.

表1 表2 表1からも従来の撥水性板を挿入しただけでは6500
個中8個中撥水性板の浮き上がシが観られたが、本発明
のように撥水性板と電極体を接着してしまう構造では、
7000個中浮き上がりは0個となった。又、組立・完
成時のLC不良を比較すると、従来品では6300個中
215個LC不良になくいたものが、本発明を行なうこ
とによって6800個中91個LC不良となシ激減した
Table 1 Table 2 From Table 1, just inserting the conventional water-repellent plate costs 6,500 yen.
Lifting of the water-repellent plate was observed in 8 of the samples, but with the structure of the present invention in which the water-repellent plate and the electrode body are bonded,
Out of 7000 pieces, 0 pieces were raised. Furthermore, when comparing the number of LC defects at the time of assembly and completion, the conventional product had 215 LC defects out of 6,300, but by implementing the present invention, the number was drastically reduced to 91 out of 6,800 LC defects.

また、半田耐熱テストにおいても同様に本発明を実施し
たものは、LC不良の発生が減少しておシ、本発明が優
位であることがわかる。
Furthermore, in the solder heat resistance test, the occurrence of LC defects was reduced in the solder heat resistance test in which the present invention was similarly applied, and it can be seen that the present invention is superior.

発明の詳細 な説明したように本発明によれば、弁作用金属線に挿入
した撥水性板と電極体を接着固定することにより、撥水
性板の浮き上がりを防止すると共に、弁作用金属線の根
元に加わる機械的ストレスを防止することができる。
DETAILED DESCRIPTION OF THE INVENTION According to the present invention, by adhesively fixing the water-repellent plate inserted into the valve-acting metal wire and the electrode body, lifting of the water-repellent plate is prevented, and the base of the valve-acting metal wire is It is possible to prevent mechanical stress from being applied to the

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明の一実施例によるチップ状タンタル電解
コンデンサの断面図、第2図は本発明のコンデンサの製
造方法の一例を示す平面図、第3図は本発明と従来品と
の半田耐熱テストによるLCの劣化特性を表わした特性
図、第4図は従来のチップ状タンタル電解コンデンサの
断面図である。 1・・・・・・電極体、2・・・・・・撥水性板、3・
・・・・・陰極引出し端子、4・・・・・・陽極引出し
端子、6・・・・・・外装樹脂、6・・・・・・弁作用
金属線、7・・・・・・接着剤。 代理人の氏名 弁理士 中 尾 敏 男 ほか1名/−
一一電&A本 ?−づ亮71(性版 3− 謄徊31七し篇子 4− 鶏攻3jカレ篇チ 5−−一外裏創脂 第1図    6−弁作M4烏線 7−−#1)Fす 第3図
FIG. 1 is a cross-sectional view of a chip-shaped tantalum electrolytic capacitor according to an embodiment of the present invention, FIG. 2 is a plan view showing an example of the method for manufacturing a capacitor of the present invention, and FIG. 3 is a solder diagram of the present invention and a conventional product. FIG. 4 is a characteristic diagram showing the deterioration characteristics of LC by a heat resistance test, and is a cross-sectional view of a conventional chip-shaped tantalum electrolytic capacitor. 1... Electrode body, 2... Water repellent plate, 3.
...Cathode lead-out terminal, 4...Anode lead-out terminal, 6...Exterior resin, 6...Valve metal wire, 7...Adhesion agent. Name of agent: Patent attorney Toshio Nakao and 1 other person/-
Ichiden & A book? -Zu Ryo 71 (Sex version 3- Mibun 31 Nanashi Henshi 4- Chicken Attack 3j Kare Henchi 5--Ichigai Ura Sobutsu Figure 1 6- Bensaku M4 Karasusen 7--#1) Fsu Figure 3

Claims (1)

【特許請求の範囲】[Claims]  弁作用を有する金属粉末に弁作用を有する金属線を植
設して成形、焼結してなる電極体の前記金属線を植設し
た根元部に、撥水性を有する絶縁部材を固着させ、誘電
体層、半導体層、陰極層を形成してなる固体電解コンデ
ンサ。
A water-repellent insulating member is fixed to the base of the electrode body where the metal wire is implanted, and a dielectric A solid electrolytic capacitor consists of a body layer, a semiconductor layer, and a cathode layer.
JP983088A 1988-01-20 1988-01-20 Solid electrolytic capacitor Pending JPH01184914A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP983088A JPH01184914A (en) 1988-01-20 1988-01-20 Solid electrolytic capacitor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP983088A JPH01184914A (en) 1988-01-20 1988-01-20 Solid electrolytic capacitor

Publications (1)

Publication Number Publication Date
JPH01184914A true JPH01184914A (en) 1989-07-24

Family

ID=11731049

Family Applications (1)

Application Number Title Priority Date Filing Date
JP983088A Pending JPH01184914A (en) 1988-01-20 1988-01-20 Solid electrolytic capacitor

Country Status (1)

Country Link
JP (1) JPH01184914A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7042190B2 (en) 2003-01-16 2006-05-09 Toyota Jidosha Kabushiki Kaisha Motor control apparatus and motor control method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7042190B2 (en) 2003-01-16 2006-05-09 Toyota Jidosha Kabushiki Kaisha Motor control apparatus and motor control method

Similar Documents

Publication Publication Date Title
JP2003197468A (en) Solid electrolytic capacitor and manufacturing method therefor
US6362950B1 (en) Solid electrolyte capacitor, and process and apparatus for producing same
US6423104B1 (en) Method of and apparatus for manufacturing tantalum solid electrolytic capacitors
JP3568432B2 (en) Method for manufacturing solid electrolytic capacitor
JP2900596B2 (en) Composite ceramic capacitors
JP2001267181A (en) Chip type solid electrolytic capacitor
JPH01184914A (en) Solid electrolytic capacitor
JPH01151228A (en) Manufacture of solid electrolytic capacitor
JPH04216608A (en) Manufacture of solid electrolytic capacitor
JP3546451B2 (en) Method for manufacturing solid electrolytic capacitor
JP3883766B2 (en) Solid electrolytic capacitor
JPH04171911A (en) Compound ceramic capacitor
JP2513410B2 (en) Leadless chip type solid electrolytic capacitor and manufacturing method thereof
JPH05326341A (en) Manufacture of solid electrolytic capacitor
JPH05326343A (en) Monolithic solid electrolytic capacitor
JP3515329B2 (en) Chip-shaped electronic component and manufacturing method thereof
JP3067900B2 (en) Chip type tantalum solid electrolytic capacitor
JPH03215924A (en) Manufacture of solid electrolytic capacitor
JP2001118750A (en) Solid electrolytic capacitor
JPS6116680Y2 (en)
JPH0225230Y2 (en)
JP2007235101A (en) Solid electrolytic capacitor
JPH05136008A (en) Solid electrolytic capacitor
JPS5898912A (en) Method of sheathing electronic part
JPH06816Y2 (en) Chip tantalum solid electrolytic capacitor