JPH01168858A - Amorphous material and its manufacture - Google Patents
Amorphous material and its manufactureInfo
- Publication number
- JPH01168858A JPH01168858A JP32827287A JP32827287A JPH01168858A JP H01168858 A JPH01168858 A JP H01168858A JP 32827287 A JP32827287 A JP 32827287A JP 32827287 A JP32827287 A JP 32827287A JP H01168858 A JPH01168858 A JP H01168858A
- Authority
- JP
- Japan
- Prior art keywords
- rare earth
- substances
- transition metal
- amorphous material
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 title claims abstract description 49
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 230000005291 magnetic effect Effects 0.000 claims abstract description 54
- 229910052761 rare earth metal Inorganic materials 0.000 claims abstract description 46
- 229910052723 transition metal Inorganic materials 0.000 claims abstract description 34
- 150000003624 transition metals Chemical class 0.000 claims abstract description 34
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 150000002910 rare earth metals Chemical class 0.000 claims description 38
- 239000000126 substance Substances 0.000 claims description 29
- 238000004544 sputter deposition Methods 0.000 claims description 26
- 238000000034 method Methods 0.000 claims description 19
- 239000013077 target material Substances 0.000 claims description 9
- 229910052755 nonmetal Inorganic materials 0.000 abstract description 6
- 229910052771 Terbium Inorganic materials 0.000 abstract description 2
- 239000000919 ceramic Substances 0.000 abstract description 2
- 239000011521 glass Substances 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 53
- 239000000203 mixture Substances 0.000 description 15
- 239000000696 magnetic material Substances 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 7
- 229910002546 FeCo Inorganic materials 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 230000005389 magnetism Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000003993 interaction Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910000808 amorphous metal alloy Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000001747 exhibiting effect Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 150000002843 nonmetals Chemical class 0.000 description 2
- -1 t 1Z Chemical class 0.000 description 2
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000004993 emission spectroscopy Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003302 ferromagnetic material Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Thin Magnetic Films (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、非晶質材、例えば希土類ＲＥと遷移金属ＴＭ
とを多層に積層させた多層膜等から成る非晶質材及びそ
の製造方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to amorphous materials such as rare earth RE and transition metal TM.
The present invention relates to an amorphous material made of a multilayer film, etc., and a method for manufacturing the same.
従来の技術
光記録媒体、光磁気記録媒体、あるいはその他の磁気記
録媒体等を作製する場合、磁気特性的に優れ、アモルフ
ァス合金特有の優れた性質を活用できるところから、最
近、非晶質材が多く用いられ始めてきている。その中で
も、希土類ＲＥと遷移金属ＴＭとを多層に積層させた非
晶質合金膜が記録媒体として用いたとき、良好な特性を
示すものとして知られており、量産化レベルにおいて実
用的に優れた材料として最近多く使用されている。Conventional technology When producing optical recording media, magneto-optical recording media, or other magnetic recording media, amorphous materials have recently become popular because they have excellent magnetic properties and can take advantage of the excellent properties unique to amorphous alloys. It is starting to be widely used. Among these, an amorphous alloy film consisting of multiple layers of rare earth RE and transition metal TM is known to exhibit good characteristics when used as a recording medium, and has excellent practical properties at the mass production level. Recently, it has been widely used as a material.
このような常温において非磁性を示す希土類等の物質を
他の磁性材と結合させ、上述したような非晶質材を磁性
材として量産する場合に採られる手法として、■例えば
希土類ＲＥと遷移金属ＴＭとから成る合金ターゲットを
用いてスパッタする方法、■希土類ＲＥ及び遷移金属Ｔ
Ｍの２つのターゲットを用いて同時にスパッタする共ス
パッタ法（２元スパッパ法あるいはＣｏスパッタ法とも
呼ばれている）を用いる方法の大別して２通りがある。A method that can be adopted when mass producing the above-mentioned amorphous material as a magnetic material by combining a substance such as a rare earth element that exhibits non-magnetism at room temperature with another magnetic material is as follows: A method of sputtering using an alloy target consisting of rare earth RE and transition metal T
There are two main methods: a co-sputtering method (also called a binary sputtering method or a Co sputtering method) in which two M targets are used for sputtering simultaneously.
■の合金ターゲットを用いる方法は、希土類ＲＥ、遷移
金属ＴＭの膜組成を予め厳密に、かつ正確に管理して作
製されたターゲットを用いるものであり、膜作製の再現
性、成膜時の管理という点では優れた方法である。一方
、■の２つのターゲットを用いる共スパッタ法によるも
のは、成膜時、２つのターゲットの各々のターゲットパ
ワー、較の分布等を管理しながら、回転される非磁性基
板上に同時にスパッタによって２つのターゲット物質を
成膜するものである。この方法では、非磁性基板が１回
転する毎に２つの膜が交互に形成されるのであるから、
得られた非晶質膜は見かけ上はもちろん、実質的に積層
膜化された膜組成となる。The method (2) using an alloy target uses a target manufactured by strictly and accurately controlling the film composition of the rare earth RE and transition metal TM in advance, and the reproducibility of film formation and control during film formation are This is an excellent method in that respect. On the other hand, in the co-sputtering method (2) using two targets, two targets are simultaneously sputtered onto a rotating non-magnetic substrate while controlling the target power and relative distribution of each of the two targets during film formation. This method forms a film using two target materials. In this method, two films are formed alternately each time the nonmagnetic substrate rotates.
The obtained amorphous film not only looks, but also has a substantially laminated film composition.
発明が解決しようとする問題点
上述した合金ターゲットを用いる方法は、上記のような
利点ををする反面、ターゲットが高価なこと、希土類Ｒ
Ｅならびに遷移金属ＴＭの基板上へのつきまわりがター
ゲット毎に製造方法によって異なる等の欠点を有し、コ
スト高であり、量産性といった面で必ずしも適切な手法
とは言えない場合がある。そのような場合に上述した共
スパッタ法が採用される。この共スパッタ法では、膜が
形成される非磁性基板の回転数及び２つのターゲットの
スパッタリングパワー等に応じて希土類ＲＥと遷移金属
ＴＭとの各原子層が交互に複数層所定層厚で積層される
ことになる。この共スパッタ法において、基板に形成さ
れる膜の原子層厚、特に希土類ＲＥの原子層を厚すると
、膜組成上は希土類ＲＥがリッチな状態で含まれている
にもかかわらず、磁気特性的には希土類ＲＥが何ら関与
しない状態、あるいは希土類が磁性に全く寄与しない状
態が生じ、折角得られたＲＥ−ＴＭより成る非晶質材の
磁気特性が大幅に低下したものとなる。Problems to be Solved by the Invention Although the method using the alloy target described above has the above-mentioned advantages, the target is expensive and the rare earth R
This method has drawbacks such as the fact that the distribution of E and transition metal TM on the substrate varies depending on the manufacturing method for each target, is expensive, and may not necessarily be an appropriate method in terms of mass production. In such a case, the above-mentioned co-sputtering method is employed. In this co-sputtering method, multiple atomic layers of rare earth RE and transition metal TM are alternately laminated to a predetermined thickness depending on the rotational speed of the nonmagnetic substrate on which the film is formed, the sputtering power of the two targets, etc. That will happen. In this co-sputtering method, when the atomic layer thickness of the film formed on the substrate, especially the atomic layer of rare earth RE, increases, the magnetic properties change even though the film composition contains rare earth RE in a rich state. In this case, a state occurs in which the rare earth element RE does not participate in any way, or a state in which the rare earth element does not contribute to magnetism at all, and the magnetic properties of the amorphous material made of the painstakingly obtained RE-TM are significantly deteriorated.
この現象は、例えば、膜を形成する基板を支持したパレ
ットを低速で回転させ一層当りの格子面熱においてＲＥ
層厚が極端に厚く堆積したとき等に現われる。This phenomenon can be caused, for example, by rotating a pallet supporting a substrate on which a film is to be formed at low speed and increasing the lattice surface heat per layer.
This appears when the layer is extremely thick.
希土類ＲＥは、それ自体では３００＠にあるいはそれ以
上の常温では非磁性であり、強磁性材である遷移金属Ｔ
Ｍと組合わせることによって始めて磁性材としての特性
を示す。この希土類ＲＥと遷移金属ＴＭとを共スパッタ
法によって結合させるにあたり、基板を支持したパレッ
トを低速で回転させると、遷移金属ＴＭの一層あたりの
原子層厚が厚くなることはもちろんであるが、特に希土
類ＲＥの一層あたりの原子層厚が高速または中速で回転
させた場合に比べて大幅に厚くなる。遷移金属の層厚を
含め、希土類ＲＥの原子層厚が厚くなると、ＩＣＰ（発
光分光分析）等による組成分析の結果では、組成の量と
しては希土類リッチな状態で希土類ＲＥが膜組成中に十
分に多く含まれ、本来希土類リッチな特性を示すはずで
あるにもかかわらず、層厚の厚さの故に希土類ＲＥが遷
移金属ＴＭとの間で磁気作用を得るに必要な、いわゆる
交換相互作用を発揮することができず、折角膜形成され
た希土類ＲＥの層が磁気特性的には全く関与しなくなり
、（ＲＥ−ＴＭ）の膜組成が磁気特性的に最適な補償組
成近傍から見かけ上は遷移金属リッチな組成に移行する
不都合な現象が生ずる。したがって、パレットの回転数
制御で膜組成を管理することは不可であり、また、必要
な組成量を得るために１層あたりの希土類ＲＥの層厚を
厚くしても、それ自体が常温で磁性を有さないため、そ
の格子面間隔における原子層厚が厚くなると、磁気作用
には何ら寄与しなくなり、高価な希土類ＲＥを無駄にす
ることになる。その結果、高価な材料の有効利用を図り
得す、また、折角得られた非晶質磁性膜も磁気特性的に
はそれほど良くないものとなる。したがって、非晶質材
を共スパッタ法で作製する場合に、ターゲット物質の利
用効率、使用効率が高いという共スパッタ法特をの優れ
た特徴を十分に活かせなかった。Rare earth RE is non-magnetic by itself at room temperature of 300@ or more, and is a transition metal T which is a ferromagnetic material.
Only when combined with M does it exhibit properties as a magnetic material. In bonding the rare earth RE and transition metal TM by co-sputtering, if the pallet supporting the substrate is rotated at low speed, the atomic layer thickness per layer of the transition metal TM will of course increase, but especially The atomic layer thickness per layer of rare earth RE becomes significantly thicker than when rotating at high or medium speed. When the atomic layer thickness of rare earth RE becomes thicker, including the layer thickness of transition metal, the results of composition analysis by ICP (emission spectroscopy) etc. show that the amount of rare earth RE in the film composition is rich in rare earth elements. Despite the fact that it should originally exhibit rare earth-rich characteristics, due to the thickness of the layer, rare earth RE does not have the so-called exchange interaction necessary to obtain a magnetic effect with the transition metal TM. As a result, the rare earth RE layer that has been formed as a corneal film has no effect on magnetic properties, and the film composition of (RE-TM) appears to shift from near the compensation composition that is optimal in terms of magnetic properties. The disadvantageous phenomenon of transition to metal-rich compositions occurs. Therefore, it is impossible to control the film composition by controlling the rotation speed of the pallet, and even if the layer thickness of the rare earth RE is increased per layer to obtain the required composition amount, the rare earth RE itself is magnetic at room temperature. Therefore, when the atomic layer thickness at the lattice spacing becomes large, it will no longer contribute to the magnetic effect, and the expensive rare earth RE will be wasted. As a result, it is possible to make effective use of expensive materials, and the amorphous magnetic film obtained with great effort does not have very good magnetic properties. Therefore, when producing an amorphous material by the co-sputtering method, the excellent characteristics of the co-sputtering method, such as high utilization efficiency and usage efficiency of the target material, cannot be fully utilized.
本発明は以上の点に鑑みなされたものであって、磁気特
性的に優れ、かつ、高価な材料の有効利用を図り得る非
晶質材及びその製造方法を提供することを目的とするも
のである。The present invention has been made in view of the above points, and an object of the present invention is to provide an amorphous material that has excellent magnetic properties and can effectively utilize expensive materials, and a method for manufacturing the same. be.
問題点を解決するための手段
上記の目的を達成するために、本発明は、複数の物質Ａ
１Ｂ、Ｃ＠−・Ｎの原子層を多層に膜形成するにあたり
、物質Ａ１Ｂ１Ｃ・・・Ｎの平均原子径をａｌｂｌｃ・
・・ｎとしたとき、その平均原子径の比が
の関係になるように選定して層形成された非晶質材であ
ることを特徴としている。Means for Solving the Problems In order to achieve the above objects, the present invention provides
When forming multiple atomic layers of 1B, C@-・N, the average atomic diameter of the substance A1B1C...N is determined by alblc・
It is characterized by being an amorphous material formed in layers selected so that the ratio of their average atomic diameters, where n is, is the following relationship.
さらに、本発明は、複数の物質Ａ、Ｂ、Ｃ・・・Ｎによ
り多層の非晶質材を形成するに当り、ターゲｙ）に複数
の物質を用いて同時にスパッタリングを行い、回転され
る非磁性基板上に複数の物質の平均原子径の比が
λ
の関係となるように層形成することを特徴とする非晶質
材の製造方法を要旨としている。Furthermore, in forming a multilayer amorphous material using a plurality of substances A, B, C...N, the present invention performs sputtering simultaneously using a plurality of substances on the target y), and The gist of this invention is a method for producing an amorphous material, which is characterized by forming layers on a magnetic substrate so that the ratio of average atomic diameters of a plurality of substances is λ.
作用
上述した関係で非晶質材の膜を形成すると、それ自体が
常温で非磁性の物質、例えばＡが他の磁性物質Ｂまたは
、Ｃ・・・Ｎと磁気的に結合され、磁性材としての機能
を発揮する。例えば、非晶質材が希土類ＲＥと遷移金属
ＴＭとから成る場合は、それ自体が常温で非磁性の希土
類ＲＥが磁性体である遷移金属ＴＭと磁気的に結合され
、いわゆる交換相互作用により磁性体としての作用を十
分に発揮するようになり、磁気特性に寄与しない分布が
なくなる。したがって磁性体膜としての非晶質材の磁気
特性が改善され、高いレベルに保持される。そして、特
に希土類の一層あたりの平均原子層厚が２Ａ（オングス
トローム）以下と薄いＭＭｉ成でありながら、十分に良
好な磁気特性を示すので、高価な希土類を無駄に使うこ
となく、材料の有効利用を図り得る。Effect When a film of an amorphous material is formed in the above-mentioned relationship, a material that itself is non-magnetic at room temperature, such as A, is magnetically coupled with another magnetic material B or C...N, and becomes a magnetic material. Demonstrate the functions of For example, when the amorphous material is composed of a rare earth RE and a transition metal TM, the rare earth RE, which itself is non-magnetic at room temperature, is magnetically coupled to the magnetic transition metal TM, and due to so-called exchange interaction, the rare earth RE is non-magnetic at room temperature. It will now fully function as a body, and there will be no distribution that does not contribute to magnetic properties. Therefore, the magnetic properties of the amorphous material used as the magnetic film are improved and maintained at a high level. In particular, even though the MMi is thin, with an average atomic layer thickness of less than 2A (angstroms) per rare earth layer, it exhibits sufficiently good magnetic properties, making effective use of materials without wasting expensive rare earths. can be achieved.
また、複数の物質Ａ、８１Ｃ・・・Ｎの原子層を多層に
積層させて非晶質材を作製するにあたり、物質Ａ、Ｂ１
Ｃ・・・Ｎの平均原子径を夫々ａ１ｂ１ｃ・・・ｎとし
たとき、その原子径の比がなる関係に選定したので、薄
膜で十分に良好な磁気特性を育する磁性体膜である非晶
質材が得られる。In addition, when producing an amorphous material by laminating multiple atomic layers of substances A, 81C...N, substances A, B1
When the average atomic diameters of C...N are a1b1c...n, the ratio of the atomic diameters was selected. A crystalline material is obtained.
実施例
以下、本発明の実施例について図面を参照して説明する
。Embodiments Hereinafter, embodiments of the present invention will be described with reference to the drawings.
本発明に係る非晶質材は、基本的には第１図に示すよう
な構成を持つ。The amorphous material according to the present invention basically has a structure as shown in FIG.
第１図において、ガラス、セラミック等の非磁性基板１
０の一面に、物質Ａ Ｉ Ｎ Ａ２ 、Ａ３ 、・４Ｉ
−からなる原子層Ａ１物質Ｂｌ、Ｂ２、Ｂ３、・・・か
らなる原子層Ｂ１物質ＣＩ、Ｃ２、Ｃ３・・・からなる
原子層Ｃ１・・・、物質Ｎｌ １Ｎ２、Ｎ３、・・・か
らなる原子層Ｎが、原子層Ａを第１層として、Ｂ１Ｃ１
・・・Ｎの順に多層に形成されており、これらの材料Ａ
１Ｂ、Ｃ１・・・Ｎにより磁性体膜を構成する非晶質膜
１１が形成されている。各原子層の平均原子径は異なっ
ており、原子層Ａのそれはａ１原子層Ｂのそれはｂｌ・
・・原子層Ｎの平均原子径はｎである。これらの原子層
Ａ１Ｂ１Ｃ・・・Ｎが多層（この場合、Ｎ層）に積み重
ねられて薄膜の非晶質膜１１が形成されている。この非
晶質薄膜１１の膜厚は、磁性材としての用途に適した膜
厚で形成される。例えば、光磁気記録媒体用として用い
られるときはおよそ１３００Ａ（オングストローム）程
度の膜厚に、また、高密度記録用磁気ヘッドの磁極材等
として用いられるときは０．０５μｍ〜１００μｍ程度
の膜厚に設定される。In FIG. 1, a non-magnetic substrate 1 made of glass, ceramic, etc.
On one side of 0, substances A I N A2 , A3 , ・4I
- atomic layer A1 consisting of substances B1 consisting of substances B1, B2, B3, . . . atomic layer C1 consisting of substances CI, C2, C3 . The atomic layer N is B1C1 with the atomic layer A as the first layer.
...It is formed in multiple layers in the order of N, and these materials A
1B, C1...N forms an amorphous film 11 constituting a magnetic film. The average atomic diameter of each atomic layer is different; that of atomic layer A is a1, and that of atomic layer B is bl.
...The average atomic diameter of the atomic layer N is n. These atomic layers A1B1C...N are stacked in multiple layers (in this case, N layers) to form a thin amorphous film 11. The amorphous thin film 11 is formed to have a thickness suitable for use as a magnetic material. For example, when used as a magneto-optical recording medium, the film thickness is about 1300A (angstrom), and when used as a magnetic pole material for a magnetic head for high-density recording, the film thickness is about 0.05 μm to 100 μm. Set.
そして、非晶質材、すなわち非晶質膜１１を形成する各
原子層Ａ、Ｂ１Ｃ，・・・Ｎは、例えばＦｅ１Ｃｏ、Ｎ
ｔ １Ｚ を等の遷移金属、Ｓ ｔ Ｎ ＣｓＧｅ１
Ａｓ等の非金属、あるいはＴｂ１Ｇｄ１ＤＶｘＰｒ等の
希土類の中のいずれか１つが構成物質として選択される
。これらの構成物質により、非晶質ｌ１１１は、例えば
、Ｃｏ１Ｚｉ等の遷移金属に５ｉ１Ｃ等の非金属を２０
〜３０ａｔ、％（アトミック・パーセント）の比率で添
加し、あるいはＴｂ１Ｇｄ等の希土類ＲＥとＦｅ％Ｇｏ
等の遷移金属ＴＭとを結合させた合金等の非晶質合金膜
の組成を持つ。Each atomic layer A, B1C,...N forming the amorphous material, that is, the amorphous film 11 is, for example, Fe1Co, N
Transition metals such as t 1Z , S t N CsGe1
One of nonmetals such as As or rare earths such as Tb1Gd1DVxPr is selected as the constituent material. These constituent materials make amorphous l111, for example, a transition metal such as Co1Zi and a non-metal such as 5i1C.
~30at,% (atomic percent) or rare earth RE such as Tb1Gd and Fe%Go
It has the composition of an amorphous alloy film such as an alloy in which transition metals such as TM are combined.
非晶質膜１１を多層に形成するにあたっては、各原子層
Ａ、Ｂ、Ｃ１・・・Ｎの層厚は原子レベルで極薄である
ことは勿論だが、その平均原子径を上記のように各々ａ
１ｂ１Ｃｔ ・・＠ｎとしたとき、次式
なる関係を満足する様に膜形成がなされる。この非晶質
膜１１は、スパッタリング法、真空蒸着法、。In forming the amorphous film 11 in multiple layers, the thickness of each atomic layer A, B, C1...N is of course extremely thin at the atomic level, but the average atomic diameter is each a
When 1b1Ct...@n, the film is formed so as to satisfy the following relationship. This amorphous film 11 can be formed using a sputtering method or a vacuum evaporation method.
イオンブレーティング法、化学的気相法等の周知の薄膜
形成技術によって成膜される。実際には、膜形成の容易
さ、成膜の速さ等の点でスパッタリング法が用いられる
。その中でも、常温で非磁性を示す物質を他の磁性体と
原子レベルで結合させ、磁性体としての特性を発揮させ
ようとする場合には、上述したように共スパッタ法が採
用される。The film is formed by a well-known thin film forming technique such as an ion blasting method or a chemical vapor phase method. In practice, sputtering is used because of its ease of film formation, speed of film formation, and the like. Among these, the co-sputtering method, as described above, is employed when a substance that is non-magnetic at room temperature is to be combined with another magnetic substance at the atomic level to exhibit the characteristics of a magnetic substance.
尚、上式で分子ａは、基板１０上に形成される原子層の
うち、第１層目の原子層Ａの平均原子径であるが、それ
は任意に入れ替えることができる。In the above equation, molecule a is the average atomic diameter of the first atomic layer A among the atomic layers formed on the substrate 10, but it can be replaced arbitrarily.
例えば、第１層目に原子層Ｂが形成される場合には、分
子は原子径すとなり、分母はその余の（ａ十〇＋・Φ・
ｎ）となる。For example, when atomic layer B is formed in the first layer, the molecule is the atomic diameter and the denominator is the remainder (a10+・Φ・
n).
上記の式を満足させた関係で、非晶質膜１１を基板１０
上に層形成すると、例えば常温で非磁性示す第１層目の
原子層Ａの物質ＡＩ 、 Ａ２ 、・σ・Ａｎが磁性体
である第２層目以降の原子層、例えば原子層Ｂの物質Ｂ
ｌ １Ｂ２ 、・・・と原子レベルで結合され、いわゆ
る交換相互作用により原子層Ａの物質ＡＩ 、Ａ２ 、
Ａ３ ・・・が磁性体としての作用を発揮するようにな
る。したがって、得られた非晶質膜１１は薄（でも良好
な磁気特性示す磁性薄膜となる。In a relationship that satisfies the above formula, the amorphous film 11 is connected to the substrate 10.
When a layer is formed on top of the material, for example, the material of the first atomic layer A which is non-magnetic at room temperature AI, A2, .σ.An is a magnetic material in the second and subsequent atomic layers, for example, the material of the atomic layer B. B
l 1B2 , ... are bonded at the atomic level, and the substances AI , A2 , and
A3... begins to function as a magnetic substance. Therefore, the obtained amorphous film 11 is a thin (but magnetic thin film) exhibiting good magnetic properties.
なお、原子層Ａの物質ｉ 、Ａ２ ％ Ａ３ ・・・と
しては５ｉｓＣ等の非金属、あるいはＴｂ、Ｇｄ等の希
土類、また原子層Ｂの物質Ｂｌ １Ｂ２、Ｂ３・・串と
してはＦｅｓ Ｃｏ、Ｚｒ等の遷移金属が挙げられる。In addition, the substance i of the atomic layer A, A2 % A3... is a non-metal such as 5isC, or a rare earth such as Tb, Gd, and the substance of the atomic layer B Bl 1B2, B3... The skewer is Fes Co, Zr. Transition metals such as
以下、代表的な実施例について述べる。Typical examples will be described below.
［実 施 例 １コ
ここでは、非金属である８１％Ｃを遷移金属であるＣｏ
Ｚｒに夫々結合させて軟磁性材５ｉ−ＣｏＺｒｓ Ｃ−
ＣｏＺｒを膜形成して見た。ここで、Ｓｉ原子径 ２
．８４Ａ
Ｃ原子径 １．８２Ａ
Ｃｏ原子径 ２．５ＯＡ
Ｚｒ原子径 ３．２ＯＡ
共スパッタリング法により、非金属５ＩＮＣと遷移金属
ＣｏＺｒとの２つのターゲット物質を用いて回転される
基板上に５ｉ１ＣおよびＣｏＺｒを交互に積層させて所
定膜厚の非晶質磁性薄膜を形成した。その際、上記式の
通り、５ｉ１ＣおよびＣｏＺｒの各層の平均原子径が
となる様に膜組成を選定し、かつ基板の回転数、スパッ
タリングパワー、各ターゲットパワー等を作製しようと
する磁性体膜に応じて最適値に調整して積層成膜させた
。[Example 1] Here, 81% C, which is a nonmetal, is replaced with Co, which is a transition metal.
Soft magnetic material 5i-CoZrs C-
A film of CoZr was formed and observed. Here, Si atomic diameter 2
．． 84A C atomic diameter 1.82A Co atomic diameter 2.5OA Zr atomic diameter 3.2OA By co-sputtering method, 5i1C and CoZr were deposited on a rotated substrate using two target materials, non-metallic 5INC and transition metal CoZr. An amorphous magnetic thin film having a predetermined thickness was formed by alternately stacking layers. At that time, according to the above formula, the film composition is selected so that the average atomic diameter of each layer of 5i1C and CoZr is as follows, and the rotation speed of the substrate, sputtering power, each target power, etc. Accordingly, the values were adjusted to the optimum values and laminated films were formed.
その結果、薄くても良好な軟磁気特性を示す、高密度記
録用磁気ヘッドの磁極材等に適した磁性薄膜５ｉ−Ｃｏ
Ｚｒ１Ｃ−ＣｏＺｒが得られた。As a result, the magnetic thin film 5i-Co, which exhibits good soft magnetic properties even though it is thin, is suitable for magnetic pole materials of magnetic heads for high-density recording.
Zr1C-CoZr was obtained.
次に第２図は本発明に係る非晶質材（膜）の他の実施例
を示すもので、非磁性基板１０上に希土類ＲＥと遷移金
属ＴＭとの原子層が同一層内で交互に入り交じった状態
で、複数層形成されている。Next, FIG. 2 shows another embodiment of the amorphous material (film) according to the present invention, in which atomic layers of rare earth RE and transition metal TM are alternately formed on the nonmagnetic substrate 10 within the same layer. Multiple layers are formed in a mixed state.
２つの原子層は上述したのと同様に共スパッタリング法
により対応する２つのターゲット物質を用いて基板１０
を回転させながら同時に層形成される。その層形成の際
、２つの原子層ＲＥとＴＭとは１層内で相互に入り交じ
り合いながら交互に多層に積層された膜構造となる。そ
して、基板１０の１回転で積層される各原子層の格子面
間隔りにおける１ユニツト内の希土類ＲＥの平均原子層
厚は２Ａ以下となる様に調整されている。さらに、各ユ
ニットにおける希土類ＲＥと遷移金属ＴＭとの平均原子
層がＲＥ／ＴＭ＞１．２なる関係式を満足する様に２つ
の層が形成されている。The two atomic layers are deposited on the substrate 10 using two corresponding target materials by the same co-sputtering method as described above.
Layers are formed simultaneously while rotating. During the layer formation, the two atomic layers RE and TM intermingle with each other within one layer to form a film structure in which they are alternately stacked in multiple layers. The average atomic layer thickness of the rare earth RE within one unit at the lattice spacing of each atomic layer stacked in one rotation of the substrate 10 is adjusted to be 2A or less. Furthermore, two layers are formed such that the average atomic layer of rare earth RE and transition metal TM in each unit satisfies the relational expression RE/TM>1.2.
次に具体的な実施例について説明する。Next, specific examples will be described.
［実 施 例 ２コ
ここでは、希土類としてＴｂが、また、遷移金属として
ＦｅＣｏが選ばれている。[Example 2] Here, Tb is selected as the rare earth and FeCo is selected as the transition metal.
ＴｂとＦｅＣｏとは、上述した共スパッタリング法によ
り２つのターゲット物質を用いて下記に例示した成膜条
件により基板１０上に同時に積層される。Tb and FeCo are simultaneously laminated on the substrate 10 by the above-described co-sputtering method using two target materials under the film forming conditions illustrated below.
第２図はその成膜の際に用いられる共スパッタリング装
置を示すもので、真空槽１２内にＴｂとＦｅＣｏの２つ
のターゲット物質１３．１４を配置すると共に、パレッ
ト１５のターゲット１３．１４との対向面に複数枚の基
板１０・・Φを周方向に間隔をあけて配列し、アルゴン
ガス（不活性ガス）を真空槽１２内に導入後、パレット
１５を回転させる。同時に電場をかけると、プラズマ放
電が発生し、気体イオンで固体ターゲット物質がたたき
出され、パレット１５の１回転毎に基板１０上にＴｂと
ＦｅＣｏが交互に積層されるというものである。FIG. 2 shows a co-sputtering apparatus used for film formation, in which two target materials 13.14, Tb and FeCo, are placed in a vacuum chamber 12, and a target material 13.14 on a pallet 15 is placed in A plurality of substrates 10 . . . . When an electric field is applied at the same time, a plasma discharge is generated and the solid target material is knocked out by gaseous ions, and Tb and FeCo are alternately stacked on the substrate 10 with each rotation of the pallet 15.
実際には、真空槽１２内の到達真空度５×１０Ｔｏｒｒ
（）−ル）以下、使用アルゴンガス圧Ｐａｒ＝０．８ｍ
Ｔｏ ｒ ｒの状態で、Ｔｂのターゲットパワーを３６
０Ｗ、ＦｅＣｏ （Ｆｅ８５ｃｏ１５）のターゲットパ
ワーを８００Ｗに設定し、６分間、共スパッタリングを
行った。Actually, the ultimate vacuum inside the vacuum chamber 12 is 5×10 Torr.
() - Le) Below, the argon gas pressure used Par = 0.8 m
In the state of Tor r, set the target power of Tb to 36
The target power of FeCo (Fe85co15) was set to 800 W, and co-sputtering was performed for 6 minutes.
Ｔｂの原子径を３．５６Ａ（オングストローム）、Ｆｅ
の原子径を２．４８Ａ１Ｃｏのそれを２゜５ＯＡとして
換算したところ、１ユニツトの格子面間隔りにおいて、
平均原子層数がＴｂｌ原子層よりも小さく、かつＴｂの
平均原子層厚が２Ａ以下の状態で磁気特性的に最適であ
ることが分かった。実際に成膜された非晶質膜１１につ
いて調べた結果について見ると、Ｔｂの平均原子層厚が
２Ａ以下と磁気的に最適であることが分かった。第４図
はその関係を示すもので、横軸はＲＥ−ＴＭ格子面間隔
Ｌ１縦軸はＲＥ−ＴＭ格子面間隔りあたりの各原子層厚
（Ａ）を表し、パレット１５の回転数をパラメータにと
っている。例えば、パレット回転数を８Ｏｒ、ｐ、ｍと
したとき、ＲＥ＝Ｔｂの平均層厚は略ＩＡ程度、４０
ｒ−１）−ｍと低速にした場合においても２Ａ以下と極
薄の層となる。この平均層厚が２Ａ以下ということは、
１つの層内にＴｂの原子とＦｅ＠Ｃｏの原子が入り交じ
っていることを意味する。The atomic diameter of Tb is 3.56A (angstrom), Fe
When converting the atomic diameter of 2.48A1Co to 2°5OA, in the lattice spacing of 1 unit,
It was found that magnetic properties are optimal when the average number of atomic layers is smaller than the Tbl atomic layer and the average Tb atomic layer thickness is 2A or less. Looking at the results of examining the amorphous film 11 that was actually formed, it was found that the average atomic layer thickness of Tb is 2A or less, which is magnetically optimal. FIG. 4 shows this relationship, where the horizontal axis represents the RE-TM lattice spacing L1, the vertical axis represents the atomic layer thickness (A) per RE-TM lattice spacing, and the rotation speed of the pallet 15 is a parameter. I'm keeping it. For example, when the pallet rotation speed is 8Or, p, m, the average layer thickness of RE=Tb is about IA, 40
Even when the speed is as low as r-1)-m, the layer is extremely thin, less than 2A. This average layer thickness is 2A or less, which means that
This means that Tb atoms and Fe@Co atoms are mixed in one layer.
さらに、本実施例では、Ｔｂを第１層としたとき、Ｔｂ
とＦｅ８５Ｃｏ１５の格子面間隔りあたりの平均原子径
の比がＴｂ／Ｆｅ８５Ｃｏ１５＞１．２となるように膜
組成が設定されている。Furthermore, in this example, when Tb is used as the first layer, Tb
The film composition is set so that the ratio of the average atomic diameter per lattice spacing of Fe85Co15 and Fe85Co15 is Tb/Fe85Co15>1.2.
以上のような膜組成で非晶質膜を作製すると、各格子面
間隔りにおけるＴｂの原子が、平均層厚２Ａ以下の極薄
であるから遷移金属ＦｅＣｏと磁気的に結合し、交換相
互作用により本来常温で非磁性のＴｂが磁性体としての
特性を示す。したがって、非晶質膜の各原子層内（また
は格子面間隔）にわたって磁性に寄与しないＴｂはなく
なる。したがって、高価なＴｂを有効利用することがで
きる。また、磁気特性が安定し、磁気的に安定した良好
な磁性体膜が得られる。When an amorphous film is fabricated with the film composition as described above, the Tb atoms in each lattice spacing are extremely thin with an average layer thickness of 2A or less, so they are magnetically coupled to the transition metal FeCo, resulting in exchange interaction. Therefore, Tb, which is originally non-magnetic at room temperature, exhibits characteristics as a magnetic material. Therefore, there is no Tb that does not contribute to magnetism within each atomic layer (or lattice spacing) of the amorphous film. Therefore, expensive Tb can be used effectively. Moreover, magnetic properties are stabilized, and a magnetically stable and good magnetic film can be obtained.
本実施例に係る非晶質膜を光磁気記録媒体として用いる
場合は、その全体の膜厚はおよそ１３００Ａで形成され
る。したがって、ＦｅＣ０も勿論だが、Ｔｂの原子層が
薄い層で多層にわたって密に成膜される。そのため、磁
性に関与しないＴｂがなくなりＴｂの有効利用を図り得
ると共に、Ｔｂ ＩＪソチな磁気補償組成近傍の良好な
磁気特性を示す磁性薄膜が得られる。When the amorphous film according to this embodiment is used as a magneto-optical recording medium, the total film thickness is approximately 1300 Å. Therefore, in addition to FeC0, a thin atomic layer of Tb is densely formed in multiple layers. Therefore, Tb not involved in magnetism is eliminated, and Tb can be used effectively, and a magnetic thin film exhibiting good magnetic properties near the magnetic compensation composition of Tb IJ can be obtained.
発明の詳細
な説明したとおり、本発明によれば、広く均一な非晶質
材（膜）が安定して得られる。また、本来常温で非磁性
を示す非金属、希土類等が磁性材である遷移金属等との
原子レベルでの結合により、十分に磁性を発揮するよう
になり、磁性に関与又は寄与しない希土類等がなくなる
ので、高価な材料の有効利用を図り、材料節約に大いに
寄与し得る。As described in detail, according to the present invention, a widely uniform amorphous material (film) can be stably obtained. In addition, non-metals, rare earths, etc., which are originally non-magnetic at room temperature, become fully magnetic by combining with transition metals, etc., which are magnetic materials, at the atomic level, and rare earths, etc., which do not participate or contribute to magnetism, This makes it possible to effectively utilize expensive materials and greatly contribute to material savings.
また、上述した条件を満足させることにより、磁気的に
安定した良好な非晶質材、すなわち磁性体膜を効率良く
作製することが可能となる。Moreover, by satisfying the above-mentioned conditions, it becomes possible to efficiently produce a good magnetically stable amorphous material, that is, a magnetic film.
第１図は本発明に係る非晶質材の模式図、第２図は非晶
質材の他の例を示す模式図、第３図は本発明方法で用い
られる共スパッタリング装置の断面図、第４図は本発明
方法で作製された非晶質材のＲＥ−ＴＭ格子面間隔とＲ
Ｅ−ＴＭ格子面間隔あたりの各原子層厚との関係を表す
グラフ図である。
１０・・Φ基板、
１１・・拳非晶質材、
（Ａ、８１Ｃ・・・Ｎ）・・・原子層、（ａ％ｂｓｃ・
・・ｎ）・・・平均原子径。
特許出願人 日本電気ホームエレクトロ第１図
第３図FIG. 1 is a schematic diagram of an amorphous material according to the present invention, FIG. 2 is a schematic diagram showing another example of an amorphous material, and FIG. 3 is a cross-sectional view of a co-sputtering apparatus used in the method of the present invention. Figure 4 shows the RE-TM lattice spacing and R of the amorphous material produced by the method of the present invention.
FIG. 2 is a graph diagram showing the relationship between each atomic layer thickness and the E-TM lattice spacing. 10...Φ substrate, 11... fist amorphous material, (A, 81C...N)... atomic layer, (a%bsc・
...n)...average atomic diameter. Patent applicant: NEC Home Electro Co., Ltd. Figure 1 Figure 3
Claims (7)
膜形成するにあたり、前記物質Ａ、Ｂ、Ｃ・・・Ｎの平
均原子径をａ、ｂ、ｃ・・・ｎとしたとき、その平均原
子径の比が ａ／（ｂ＋ｃ＋・・・＋ｎ）＞１．２ の関係になる様に選定して層形成されたことを特徴とす
る非晶質材。(1) When forming multiple atomic layers of a plurality of substances A, B, C...N, the average atomic diameters of the substances A, B, C...N are determined as a, b, c... An amorphous material, characterized in that the layers are selected and formed so that the ratio of average atomic diameters is a/(b+c+...+n)>1.2, where n is the average atomic diameter.
移金属ＴＭとから構成したことを特徴とする特許請求の
範囲第（１）項に記載の非晶質材。(2) The amorphous material according to claim (1), wherein the plurality of substances A, B, C...N are composed of a rare earth RE and a transition metal TM.
許請求の範囲第（１）項〜第（２）項に記載の非晶質材
。(3) The ratio of the average atomic diameters of the rare earth RE and the transition metal TM is selected such that RE/TM>1.2. The amorphous material described in section 2).
遷移金属ＴＭとから構成し、希土類ＲＥと遷移金属ＴＭ
とを多層に膜形成させるに当り、その平均原子径の比が ＲＥ／ＴＭ＞１．２ の関係となるように選定し、かつ一層における希土類Ｒ
Ｅの平均原子層厚を２Å（オングストローム）以下にし
たことを特徴とする特許請求の範囲第（１）項〜第（３
）項に記載の非晶質材。(4) Multiple substances A, B, C...N as rare earth RE,
composed of a rare earth RE and a transition metal TM.
In forming a multilayer film of
Claims (1) to (3) characterized in that the average atomic layer thickness of E is 2 Å (angstrom) or less.
) Amorphous material described in section 2.
質材を形成するに当り、ターゲットに複数の物質を用い
て同時にスパッタリングを行い、回転される非磁性基板
上に複数の物質の平均原子径の比が ａ／（ｂ＋ｃ・・・ｎ）＞１．２ の関係となるように層形成することを特徴とする非晶質
材の製造方法。(5) When forming a multilayer amorphous material using a plurality of substances A, B, C...N, sputtering is performed simultaneously using a plurality of substances as a target, and a plurality of substances are sputtered on a rotating non-magnetic substrate. A method for producing an amorphous material, characterized in that layers are formed such that the ratio of the average atomic diameters of the substances satisfies the relationship a/(b+c...n)>1.2.
移金属ＴＭとから構成したことを特徴とする特許請求の
範囲第（５）項に記載の非晶質材の製造方法。(6) A method for manufacturing an amorphous material according to claim (5), characterized in that the plurality of substances A, B, C...N are composed of a rare earth RE and a transition metal TM. .
移金属ＴＭとから構成し、希土類ＲＥと遷移金属ＴＭの
２つのターゲット物質を用いて同時にスパッタリングを
行い、回転される非磁性基板上に希土類ＲＥと遷移金属
ＴＭとの平均原子径の比が ＲＥ／ＴＭ＞１．２ なる関係で、一層当りの希土類ＲＥの平均原子層厚が２
Å以下となるように層形成することを特徴とする特許請
求の範囲第（５）項〜第（６）項に記載の非晶質材の製
造方法。(7) A plurality of substances A, B, C...N are composed of a rare earth RE and a transition metal TM, and sputtering is performed simultaneously using two target materials, the rare earth RE and the transition metal TM. Since the average atomic diameter ratio of the rare earth RE and transition metal TM on the magnetic substrate is RE/TM>1.2, the average atomic layer thickness of the rare earth RE per layer is 2.
A method for manufacturing an amorphous material according to claims (5) to (6), characterized in that the layers are formed so that the thickness is less than .ANG.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32827287A JPH01168858A (en) | 1987-12-23 | 1987-12-23 | Amorphous material and its manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP32827287A JPH01168858A (en) | 1987-12-23 | 1987-12-23 | Amorphous material and its manufacture |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01168858A true JPH01168858A (en) | 1989-07-04 |
Family
ID=18208369
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP32827287A Pending JPH01168858A (en) | 1987-12-23 | 1987-12-23 | Amorphous material and its manufacture |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01168858A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7285338B2 (en) * | 2000-08-02 | 2007-10-23 | Neomax Co., Ltd. | Anisotropic thin-film rare-earth permanent magnet |
-
1987
- 1987-12-23 JP JP32827287A patent/JPH01168858A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7285338B2 (en) * | 2000-08-02 | 2007-10-23 | Neomax Co., Ltd. | Anisotropic thin-film rare-earth permanent magnet |
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