JPH01166414A - Manufacture of chip-form jumper element - Google Patents

Manufacture of chip-form jumper element

Info

Publication number
JPH01166414A
JPH01166414A JP32582787A JP32582787A JPH01166414A JP H01166414 A JPH01166414 A JP H01166414A JP 32582787 A JP32582787 A JP 32582787A JP 32582787 A JP32582787 A JP 32582787A JP H01166414 A JPH01166414 A JP H01166414A
Authority
JP
Japan
Prior art keywords
baking
chip
pattern layer
jumper element
ceramic green
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP32582787A
Other languages
Japanese (ja)
Inventor
Masato Hashimoto
正人 橋本
Osamu Makino
治 牧野
Koji Nishida
孝治 西田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP32582787A priority Critical patent/JPH01166414A/en
Publication of JPH01166414A publication Critical patent/JPH01166414A/en
Pending legal-status Critical Current

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Abstract

PURPOSE:To reduce the processes by unifying a mask and baking lumping together, by forming a ceramic insulating pattern layer to cover conductor patterns formed on ceramic green sheets prior to the baking, and baking them at a time. CONSTITUTION:Conductor pattern layers 2 are formed on ceramic green sheets 1 prior to a baking, insulating patterns 3 to cover the conductor patterns 2 are formed, and they are baked up simultaneously. In this case, when the simulta neous baking temperature is less than 800 deg.C, troubles such as a poor antibending strength of the product or a poor adhesive strength of the electrode are generat ed, and when it is higher than 1000 deg.C, a trouble of increased transmission resis tance owing to an oversintering is generated. The sintering temperature is perferable between 800 deg.C and 1000 deg.C accordingly. In such a way, the unification of printing mask, and the lumping of baking process are realized to reduce the number of bakings, and the process can be simplified.

Description

【発明の詳細な説明】 産業上の利用分野 本発明はチップ状ジャンパー素子の製造方法に関するも
のである。
DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a method of manufacturing a chip-like jumper element.

従来の技術 近年、電子機器の軽薄短小化に対する要求がますます増
大していく中、回路基板の配線密度を高めるため、配線
と配線のクロスする部分に、チップ状ジャンパー素子(
チップジャンパー)カ多く用いられるようになってきた
Conventional technology In recent years, with the increasing demand for lighter, thinner, and smaller electronic devices, chip-like jumper elements (
chip jumpers) have come into widespread use.

従来の小型のチップジャンパーは、チップ抵抗器の製造
工程(工業調査会発行最新サーフェイス・マウントテク
ノロジーP27〜P33)の抵抗体の部分をAg系ペー
ストからなる導体部に置き換え、更にトリミング工程を
排除し、抵抗値選別を導通チエツクに置き換えたもので
ある。その工程を第6図に示す。まず焼成済みのアルミ
ナ基板にAg系ペーストをスクリーン印刷することによ
り上面電極パターンを形成し、空気中850℃で1時間
焼成する。その後、抵抗印刷と同様の印刷パターンを用
いて、五g系ペーストをスクリーン印刷することにより
導体パターンを形成し、空気中850℃で1時間焼成す
る。次に、ホウケイ酸鉛系のガラスペーストをスクリー
ン印刷することにより絶縁ガラスパターン層を形成し空
気中6oo℃で1時間焼成する。その後、−次分割後、
更に端面電極層をムg系ペーストをローラーにより塗布
することにより形成し空気中600℃で1時間焼成する
Conventional small chip jumpers replace the resistor part of the chip resistor manufacturing process (Latest Surface Mount Technology P27-P33 published by the Industrial Research Council) with a conductor part made of Ag-based paste, and further eliminate the trimming process. , the resistance value selection is replaced with a continuity check. The process is shown in FIG. First, a top electrode pattern is formed by screen printing an Ag-based paste on a fired alumina substrate, and then fired in air at 850° C. for 1 hour. Thereafter, a conductor pattern is formed by screen printing the 5g paste using a printing pattern similar to that used for resistance printing, and baking is performed in air at 850° C. for 1 hour. Next, an insulating glass pattern layer is formed by screen printing a lead borosilicate glass paste, and is fired in air at 60° C. for 1 hour. Then, after −th division,
Furthermore, an end face electrode layer is formed by applying a mug paste using a roller, and is baked in air at 600° C. for 1 hour.

次に二次分割を行い、露出電極面にNiと5n−pbメ
ツキ層を電解メツキによシ施し、導通チエツクを行い完
成するといった工程を用いてきた。
Next, a process has been used in which secondary division is performed, a Ni and 5N-PB plating layer is electrolytically plated on the exposed electrode surface, and a continuity check is performed to complete the process.

発明が解決しようとする問題点 しかし、この工程では、セラミック基板のサイズのバラ
付きに応じて、印刷マスクを多数用意する必要があった
。更に上面電極層、導体パターン層、絶縁ガラス層、端
面電極層をそれぞれ個別に印刷と焼成を行っているため
、焼成回数が多く。
Problems to be Solved by the Invention However, in this process, it was necessary to prepare a large number of printing masks depending on the variation in the size of the ceramic substrate. Furthermore, because the top electrode layer, conductor pattern layer, insulating glass layer, and end electrode layer are each printed and fired individually, the number of firings is large.

工程が複雑になるといった問題があった。There was a problem that the process became complicated.

本発明は、このような問題点を解決するもので。The present invention solves these problems.

工程の簡略化を図ることを目的とする。The purpose is to simplify the process.

問題点を解決するだめの手段 本発明のチップ状ジャンパー素子の製造方法は。A foolproof way to solve problems A method for manufacturing a chip-like jumper element according to the present invention.

未焼成のセラミックグリーンシート上に、導体パターン
層を形成し、その導体パターンを覆う絶縁パターン層を
形成し、これらを同時に焼成するように構成したもので
ある。
A conductor pattern layer is formed on an unfired ceramic green sheet, an insulating pattern layer is formed to cover the conductor pattern, and these are fired simultaneously.

作用 これにより印刷マスクの一元化、及び−括焼成によシ焼
成回数を削減し工程の簡略化を実現することができる。
As a result, it is possible to unify the printing masks, reduce the number of firings by batch firing, and simplify the process.

実施例 以下1本発明の一実施例について、図面を参照しながら
説明する。
Embodiment One embodiment of the present invention will be described below with reference to the drawings.

第1図は本発明のチップ状ジャンパー素子の製造方法の
実施例1を示す工程図、第2図は第1図の各工程におけ
る製品の上面図あるいは斜視図。
FIG. 1 is a process diagram showing Embodiment 1 of the method for manufacturing a chip-like jumper element of the present invention, and FIG. 2 is a top view or perspective view of the product in each step of FIG. 1.

第3図は本発明のチップ状ジャンパー素子の製造方法の
実施例2を示す工程図、第4図は第3図の各工程におけ
る製品の上面図と斜視図、第6図は実施例2による完成
品の断面図を示したものである。
FIG. 3 is a process diagram showing Example 2 of the method for manufacturing a chip-like jumper element of the present invention, FIG. 4 is a top view and perspective view of the product in each step of FIG. 3, and FIG. 6 is according to Example 2. It shows a cross-sectional view of the finished product.

まず、実施例1のチップ状ジャンパー素子の製造方法に
付いて第1図と第2図を用いながら説明する。
First, a method for manufacturing the chip-like jumper element of Example 1 will be described with reference to FIGS. 1 and 2.

まずム12o、/ガラス比が60 / 50の粉体にバ
インダーを加え、スラリー状にしたものを、第2図aの
ように未焼成のセラミックグリーンシート1に成形する
。次に、その上に、五g系ペーストをスクリーン印刷す
ることにより、第2図すのと ように導体パター層2を形成する。その上に、ガラスセ
ラミックペーストをスクリーン印刷することにより、第
2図Cのようにセラミック絶縁パターン層3を形成する
。次に、薄板状の刃を押し付けることにより未焼成のセ
ラミックグリーンシート(t=o、am)に、コノ厚ミ
(7) 50 %程度(D深さの短冊分割のためのV溝
6と個片分割のためのV溝6を形成する。その後、空気
中800℃〜1000℃で2時間(ピーク20分)のプ
ロファイルにより、焼成する。更に、短冊分割のための
V溝5に沿って第2図fのように短冊状に分割し。
First, a binder is added to powder having a glass ratio of 60/50, and the slurry is formed into an unfired ceramic green sheet 1 as shown in FIG. 2a. Next, a conductor pattern layer 2 is formed thereon by screen printing a 5g paste as shown in FIG. A ceramic insulation pattern layer 3 is formed thereon by screen printing a glass-ceramic paste as shown in FIG. 2C. Next, by pressing a thin plate-shaped blade onto the unfired ceramic green sheet (t=o, am), the thickness of the groove (7) is approximately 50% (with the V groove 6 for dividing into strips with a depth of D) and the individual pieces. A V-groove 6 for dividing into strips is formed.Then, baking is performed in air at 800°C to 1000°C for 2 hours (peak 20 minutes) according to the profile. Divide into strips as shown in Figure 2 f.

更に個片分割のためのV溝6に沿って第2図gのように
個片状に分割をおこなう。この後、露出電極面にN1と
5n−Pbメツキ層を電解メツキによって施す。最後に
導通チエツクを行い、チップ状ジャンパー素子が完成す
る。実施例1によるチップ状ジャンパー素子の導通抵抗
値は約4mオーム。
Furthermore, it is divided into individual pieces along the V-groove 6 for dividing into individual pieces as shown in FIG. 2g. Thereafter, N1 and 5n-Pb plating layers are applied to the exposed electrode surface by electrolytic plating. Finally, a continuity check is performed, and the chip-like jumper element is completed. The conduction resistance value of the chip-like jumper element according to Example 1 is about 4 mΩ.

電極の接着強度は約2.215/−である。The adhesive strength of the electrodes is approximately 2.215/-.

同時焼成する温度が800℃未満であると、製品の抗折
強度や電極の接着強度が弱くなるといった問題が生じ、
また1000℃より高い温度にすると、過焼結により導
通抵抗が高くなるといった問題が生じる。
If the co-firing temperature is less than 800°C, problems will occur such as the product's bending strength and electrode adhesive strength becoming weaker.
Moreover, if the temperature is higher than 1000° C., a problem arises in that conduction resistance increases due to oversintering.

次に実施例2について第3図と第4図を用いながら説明
する。
Next, Example 2 will be explained using FIGS. 3 and 4.

まずム1!20s/ガラス比がso/soの粉体にバイ
ンダーを加え、スラリー状にしたものを、第4図aのよ
うに未焼成のセラミックグリーンシート1に成形する。
First, a binder is added to powder having a so/so ratio of 1 to 20 s/glass, and the slurry is formed into an unfired ceramic green sheet 1 as shown in FIG. 4a.

次に、その上に、Ag系ベーストをスクリーン印刷する
ことによシ第4図すのように導体パターン層2を形成す
る。その上に、ガラスセラミックペーストをスクリーン
印刷することにより第4図gのようにセラミック絶縁パ
ターン層3を形成する。次にガラスペーストをスクリー
ン印刷することにより第4図dのように文字。
Next, a conductor pattern layer 2 is formed thereon by screen printing an Ag base as shown in FIG. A ceramic insulation pattern layer 3 is formed thereon by screen printing a glass ceramic paste as shown in FIG. 4g. Next, by screen printing the glass paste, the letters as shown in Figure 4d are printed.

記号を示す捺印層4を形成する。その後、薄板状の刃を
押し付けることにより第4図eのように未焼成のセラミ
ックグリーンシー) (t +O,es+s )に、こ
の厚みの60%程度の深さの個片分割のためのV溝6を
形成する。その後に、薄板状の刃を押し付けることによ
り第4図fのように短冊状グリーンシートに切断を行う
。この後、端面にムg系ペーストをローラーにより塗布
することにより第4図gのように端面電極層7を形成す
る。その後、空気中800℃〜1000℃で2時間(ピ
ーク20分)のプロファイルによシ、焼成する。さらに
1個片分割のためのV溝6に沿って第4図りのように個
片分割を行い、露出電極面にN1とan−Pbメツキ層
8を電解メツキによシ施す。最後に導通チエツクを行い
、第6図のようにチップ状ジャンパー素子が完成する。
A stamp layer 4 showing a symbol is formed. Thereafter, by pressing a thin plate-shaped blade, a V-groove for dividing into pieces with a depth of about 60% of this thickness is formed in the unfired ceramic green seam (t + O, es + s) as shown in Figure 4e. form 6. Thereafter, by pressing a thin blade, the green sheet is cut into strips as shown in FIG. 4f. Thereafter, a mug paste is applied to the end face using a roller to form the end face electrode layer 7 as shown in FIG. 4g. Thereafter, it is baked in air at 800°C to 1000°C according to the profile for 2 hours (peak time: 20 minutes). Further, it is divided into individual pieces as shown in the fourth diagram along the V groove 6 for dividing into individual pieces, and a N1 and an-Pb plating layer 8 is electrolytically plated on the exposed electrode surface. Finally, a continuity check is performed, and the chip-shaped jumper element is completed as shown in FIG.

本実施例によるチップ状ジャンパー素子の導通抵抗値は
約4mオーム、電極の接着強度は約2.2Kp/−であ
る。
The conduction resistance value of the chip-shaped jumper element according to this example is about 4 mΩ, and the adhesive strength of the electrodes is about 2.2 Kp/-.

同時焼成する温度が800℃未満であると、製品の抗折
強度や電極の接着強度が弱くなるといった問題が生じ、
また1 000℃より高い温度にすると過焼結によシ導
通抵抗が高くなるといった問題が生じる。
If the co-firing temperature is less than 800°C, problems will occur such as the product's bending strength and electrode adhesive strength becoming weaker.
Furthermore, if the temperature is higher than 1,000°C, a problem arises in that conduction resistance increases due to oversintering.

なお実施例1では捺印層は形成しなかったが。Note that in Example 1, no marking layer was formed.

個別に印刷、焼成してもよい。また、電極はAg系以外
にもpt、pa等の貴金属系、H2雰囲気中であればC
u系などを用いることができる。また、グリーンシート
にはム1203/ガラス比が50750にしたが絶縁性
セラミック材料も用いることもできる。
They may be printed and fired individually. In addition to Ag-based electrodes, noble metal-based electrodes such as pt and pa can be used, and if the electrode is in an H2 atmosphere, carbon
u series etc. can be used. Furthermore, although the glass ratio is 50,750, an insulating ceramic material may also be used for the green sheet.

発明の効果 以上の説明から明らかなように本発明は、未焼成のセラ
ミックグリーンシート上に、導体パターン層を形成し、
前記導体パターンを覆うセラミック絶縁パターン層を形
成し、同時に焼成するように構成されているので、マス
クの一元化、−括焼成による工程の削減といった優れた
効果が得られる。また、セラミックグリーンシートと端
面電極層を一括焼成しているために、従来法に比べ電極
の接着強度が約16%アップする(従来品1.9卒/−
→2.211p/J)といった効果も得られる。
Effects of the Invention As is clear from the above explanation, the present invention forms a conductive pattern layer on an unfired ceramic green sheet,
Since the ceramic insulating pattern layer covering the conductor pattern is formed and fired at the same time, excellent effects such as unification of masks and reduction of steps due to simultaneous firing can be obtained. In addition, since the ceramic green sheet and the end electrode layer are fired all at once, the adhesive strength of the electrode is increased by approximately 16% compared to the conventional method (conventional product 1.9/-
→2.211p/J).

【図面の簡単な説明】 第1図は本発明のチップ状ジャンパー素子の製造方法の
実施例1による工程図、第2図は第1図の各工程におけ
る製品の上面図および斜視図、第3図は本発明のチップ
状ジャンパー素子の製造方法の実施例2による工程図、
第4図は第3図の各工程における製品の上面図と斜視図
、第6図は実施例2による完成品の断面図、第6図は従
来のチップ状ジャンパー素子の製造工程図である。 1・・・・・・未焼成のセラミックグリーンシート、2
・・・・・・導体パターン層、3・・・・・・セラミッ
ク絶縁パターン層、4・・・・・・捺印層、5.6・・
・・・・V溝。 代理人の氏名 弁理士 中 尾 敏 男 ほか1名簿 
1 因 第2図 第3図 第4図 第5図
[BRIEF DESCRIPTION OF THE DRAWINGS] FIG. 1 is a process diagram according to Embodiment 1 of the method for manufacturing a chip-like jumper element of the present invention, FIG. 2 is a top view and perspective view of the product in each step of FIG. 1, and FIG. The figure is a process diagram according to Example 2 of the method for manufacturing a chip-like jumper element of the present invention,
4 is a top view and a perspective view of the product in each step of FIG. 3, FIG. 6 is a cross-sectional view of a completed product according to Example 2, and FIG. 6 is a diagram of the manufacturing process of a conventional chip-shaped jumper element. 1... Unfired ceramic green sheet, 2
... Conductor pattern layer, 3 ... Ceramic insulation pattern layer, 4 ... Imprint layer, 5.6 ...
...V groove. Name of agent: Patent attorney Toshio Nakao and 1 other list
1 Cause Figure 2 Figure 3 Figure 4 Figure 5

Claims (3)

【特許請求の範囲】[Claims] (1)未焼成のセラミックグリーンシート上に導体パタ
ーン層を形成し、その導体パターン層の一部を覆う絶縁
パターン層を形成した後、同時に焼成することを特徴と
するチップ状ジャンパー素子の製造方法。
(1) A method for manufacturing a chip-like jumper element, which comprises forming a conductor pattern layer on an unfired ceramic green sheet, forming an insulating pattern layer covering a part of the conductor pattern layer, and then firing the same at the same time. .
(2)未焼成のセラミックグリーンシート上に導体パタ
ーン層を形成し、その導体パターン層の一部を覆う絶縁
パターン層を形成した後、ガラスセラミックあるいはガ
ラスからなる文字,記号を示す捺印層を形成し、その後
端面電極層を形成した後、同時に焼成することを特徴と
する特許請求の範囲第1項記載のチップ状ジャンパー素
子の製造方法。
(2) After forming a conductor pattern layer on an unfired ceramic green sheet and forming an insulating pattern layer covering a part of the conductor pattern layer, a marking layer showing characters and symbols made of glass ceramic or glass is formed. 2. The method of manufacturing a chip-like jumper element according to claim 1, wherein the step of forming the end face electrode layer is then simultaneously fired.
(3)同時に焼成する温度が800℃〜1000℃であ
ることを特徴とする特許請求の範囲第1項または第2項
記載のチップ状ジャンパー素子の製造方法。
(3) The method for manufacturing a chip-like jumper element according to claim 1 or 2, characterized in that the temperature for simultaneous firing is 800°C to 1000°C.
JP32582787A 1987-12-23 1987-12-23 Manufacture of chip-form jumper element Pending JPH01166414A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP32582787A JPH01166414A (en) 1987-12-23 1987-12-23 Manufacture of chip-form jumper element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP32582787A JPH01166414A (en) 1987-12-23 1987-12-23 Manufacture of chip-form jumper element

Publications (1)

Publication Number Publication Date
JPH01166414A true JPH01166414A (en) 1989-06-30

Family

ID=18181046

Family Applications (1)

Application Number Title Priority Date Filing Date
JP32582787A Pending JPH01166414A (en) 1987-12-23 1987-12-23 Manufacture of chip-form jumper element

Country Status (1)

Country Link
JP (1) JPH01166414A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0362459U (en) * 1989-10-20 1991-06-19
JP2008078293A (en) * 2006-09-20 2008-04-03 Matsushita Electric Ind Co Ltd Chip component and manufacturing method thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0362459U (en) * 1989-10-20 1991-06-19
JP2008078293A (en) * 2006-09-20 2008-04-03 Matsushita Electric Ind Co Ltd Chip component and manufacturing method thereof

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