JPH01164039A - Automatic washing apparatus of semiconductor substrate - Google Patents
Automatic washing apparatus of semiconductor substrateInfo
- Publication number
- JPH01164039A JPH01164039A JP62323498A JP32349887A JPH01164039A JP H01164039 A JPH01164039 A JP H01164039A JP 62323498 A JP62323498 A JP 62323498A JP 32349887 A JP32349887 A JP 32349887A JP H01164039 A JPH01164039 A JP H01164039A
- Authority
- JP
- Japan
- Prior art keywords
- tank
- semiconductor substrate
- fluorescence
- substrate
- light source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 51
- 239000004065 semiconductor Substances 0.000 title claims abstract description 38
- 238000005406 washing Methods 0.000 title abstract 3
- 238000001917 fluorescence detection Methods 0.000 claims abstract description 9
- 238000004140 cleaning Methods 0.000 claims description 24
- 239000000126 substance Substances 0.000 abstract description 25
- 230000005540 biological transmission Effects 0.000 abstract description 10
- 238000000034 method Methods 0.000 abstract description 6
- 239000007788 liquid Substances 0.000 abstract description 3
- 230000003321 amplification Effects 0.000 abstract description 2
- 238000003199 nucleic acid amplification method Methods 0.000 abstract description 2
- 239000000356 contaminant Substances 0.000 abstract 2
- 239000012535 impurity Substances 0.000 description 11
- 238000011109 contamination Methods 0.000 description 7
- 230000005284 excitation Effects 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 238000001514 detection method Methods 0.000 description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 229910052742 iron Inorganic materials 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- -1 iron ions Chemical class 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 239000005416 organic matter Substances 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 229910001415 sodium ion Inorganic materials 0.000 description 2
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 239000003504 photosensitizing agent Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Cleaning Or Drying Semiconductors (AREA)
- Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
- Cleaning In General (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体の製造装置、特に半導体拡散工程中で用
いる半導体基板自動洗浄装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor manufacturing apparatus, and particularly to an automatic semiconductor substrate cleaning apparatus used in a semiconductor diffusion process.
従来、この種の半導体基板自動洗浄装置は第８図に示す
ように無機酸又は有機溶剤の薬液槽１ｇ＋１ｈとリンス
槽１１と、純水槽１ｊ及び遠心乾燥機１により構成され
ている（例えば半導体製造装置実用便覧２７５頁、サイ
エンスフォーラム社刊昭和５９年１２月２５日） 、
ｌｄはキャリア、１ｅは半導体基板、ＩＱはキャリア搬
送装置部である。Conventionally, this type of automatic semiconductor substrate cleaning apparatus is comprised of an inorganic acid or organic solvent chemical tank 1g+1h, a rinsing tank 11, a pure water tank 1j, and a centrifugal dryer 1, as shown in FIG. Equipment Practical Handbook, page 275, published by Science Forum, December 25, 1980),
ld is a carrier, 1e is a semiconductor substrate, and IQ is a carrier transport device section.
上述した従来の半導体基板自動洗浄装置においては、拡
散、酸化工程の前に半導体基板の表面を洗浄し、後工程
の熱処理において半導体基板表面に付着した微量の不純
物を完全除去することを目的としている。例えばＭＯ３
型半導体においては、ナトリウムイオンや、鉄イオンな
どの微量不純物が基板中へ拡散されると、酸化膜の絶縁
耐圧低下や、ジャンクション耐圧の低下、リーク不良と
なるため、この装置の主要部の材質はテフロンや。The conventional automatic semiconductor substrate cleaning equipment described above cleans the surface of the semiconductor substrate before the diffusion and oxidation steps, and aims to completely remove minute amounts of impurities attached to the surface of the semiconductor substrate during heat treatment in the post-process. . For example, MO3
In type semiconductors, if trace amounts of impurities such as sodium ions and iron ions are diffused into the substrate, this will cause a decrease in the dielectric strength of the oxide film, a decrease in the junction withstand voltage, and leakage defects. is Teflon.
石英を多用するなど汚染のない清浄なものを用い、また
使用する薬剤も不純分のごく少ないものを用いるのが一
般的である。It is common to use clean, uncontaminated materials, such as a large amount of quartz, and to use chemicals with very little impurity.
ところが上述し、た従来の半導体基板自動洗浄装置にお
いては洗浄する半導体基板そのものが高濃度に汚れてい
ると、槽、薬液を逆に汚染し、またその後連続し、て洗
浄を行った別の半導体基板をも不純物で汚染させてしま
う欠点を有していた。However, as mentioned above, in the conventional semiconductor substrate automatic cleaning equipment, if the semiconductor substrate itself to be cleaned is highly contaminated, it may contaminate the tank and the chemical solution, and may cause damage to other semiconductors that are subsequently cleaned. This method has the disadvantage that the substrate is also contaminated with impurities.
本発明の目的は前記問題点を解消した半導体基板自動洗
浄装置を提供することにある。SUMMARY OF THE INVENTION An object of the present invention is to provide an automatic semiconductor substrate cleaning apparatus that solves the above-mentioned problems.
上述した従来の半導体基板自動洗浄装置に対し、本発明
は半導体基板上に残留する有機物に短波長の光を照射し
て有機物の存在を検知し、有機物で高濃度に汚染した基
板の洗浄動作を事前に停止させ、薬液槽、薬液の汚染を
未然に防ぎ、汚染の拡大を防止することができるという
相違点を有する。In contrast to the conventional semiconductor substrate automatic cleaning apparatus described above, the present invention detects the presence of organic substances by irradiating short wavelength light onto the organic substances remaining on the semiconductor substrate, and performs cleaning operations on substrates highly contaminated with organic substances. The difference is that it can be stopped in advance, preventing contamination of the chemical tank and the chemical solution, and preventing the spread of contamination.
本発明は半導体基板が搬入される第１槽を、外光より遮
光する槽構造とし、該第１槽に、内部の半導体基板を照
射する光源と、照射された半導体基板より発する蛍光を
検出する蛍光検出部とを有することを特徴とする半導体
基板自動洗浄装置である。In the present invention, the first tank into which semiconductor substrates are carried has a tank structure that is shielded from external light, and the first tank is equipped with a light source that irradiates the semiconductor substrates inside and detects fluorescence emitted from the irradiated semiconductor substrates. This is an automatic semiconductor substrate cleaning apparatus characterized by having a fluorescence detection section.
半導体基板の汚染源の一つはパターンニング工程で用い
られるフォトレジストであり、前工程であるレジスト除
去工程で除去が不充分であった場合レジストが基板表面
に残留した状態で洗浄を行うことになるため、洗浄槽及
び薬液を高濃度の不純物で汚染する。本発明の半導体基
板自動洗浄装置では残留レジストに光を照射し、発生す
る蛍光を検知することによりレジスト残留を判別し、洗
浄槽及び薬液、純水が汚染することを未然に防ぐことが
可能である。One of the sources of contamination on semiconductor substrates is the photoresist used in the patterning process, and if the removal is insufficient in the previous resist removal process, cleaning will be performed with the resist remaining on the substrate surface. Therefore, the cleaning tank and chemical solution are contaminated with high concentration of impurities. The automatic semiconductor substrate cleaning device of the present invention irradiates the residual resist with light and detects the generated fluorescence to determine whether the resist remains, thereby preventing contamination of the cleaning tank, chemical solution, and pure water. be.
一般に物質に光を照射した場合、光を吸収して内部の電
子が励起され基底状態に戻るときに蛍光を発する。ポジ
型レジストは主にアルカリ可溶性フェノール樹脂と感光
剤が有機溶剤に溶解されている状態であり、５００〜５
５０ｎｍの光を照射することにより５８０〜６８０ｎｍ
の蛍光を発するので、この蛍光を分離、検知する。また
ネガ型レジストは主に環化ゴムと光架橋剤が有機溶剤に
溶解されている状態であり、４００〜５００ｎｍの波長
の光を照射すると、５３０〜６３０ｎｍの蛍光を発する
ので、この蛍光を分離、検知する。一般に蛍光波長は励
起波長より長波長のため、励起光と蛍光を分離するフィ
ルタを光源及び検知部に用いることにより、蛍光を分離
検知することが可能となり、半導体基板上に残留フォト
レジストがあるかどうかの検出の手段として利用できる
。Generally, when a substance is irradiated with light, it absorbs the light and the internal electrons are excited, and when they return to their ground state, they emit fluorescence. A positive resist is a state in which an alkali-soluble phenol resin and a photosensitizer are mainly dissolved in an organic solvent.
580-680nm by irradiating 50nm light
This fluorescence is separated and detected. In addition, a negative resist mainly consists of cyclized rubber and a photocrosslinking agent dissolved in an organic solvent, and when irradiated with light with a wavelength of 400 to 500 nm, it emits fluorescence of 530 to 630 nm, so this fluorescence can be separated. , detect. Generally, the wavelength of fluorescence is longer than the excitation wavelength, so by using a filter that separates excitation light and fluorescence in the light source and detection section, it is possible to separate and detect the fluorescence, and check whether there is residual photoresist on the semiconductor substrate. It can be used as a means of detection.
次に本発明について図面を参照して説明する。 Next, the present invention will be explained with reference to the drawings.
（実施例１） 第１図は本発明の実施例１を示す縦断面図である。(Example 1) FIG. 1 is a longitudinal sectional view showing a first embodiment of the present invention.
１ａは本発明の主要素である残留有機物検出のための第
１槽であり、該第１槽１ａは天蓋Ｉｍを閉じることによ
り外光を遮光する槽構造になっており、その内部には半
導体基板に光照射を行う光源１ｂと。1a is a first tank for detecting residual organic matter, which is the main element of the present invention, and the first tank 1a has a tank structure that blocks external light by closing a canopy Im. and a light source 1b that irradiates the substrate with light.
該基板より発する蛍光を検出する蛍光検出部１ｃとを装
備している。Ｉｇ、ｌｈ、ｌｉ、ｌｊは第２槽〜第５槽
であり、通常第２槽、第３槽は薬液槽、第４槽はリンス
槽、第５槽は純水槽であるが、薬液槽、リンス槽、純水
槽の槽数はさらに増減しても本発明の効果が変わらない
ことはいうまでもない。１には遠心乾燥機であり、キャ
リア搬送装＠ＩＱ及びキャリア搬送装置アーム１ｆによ
ってキャリア１ｄ及び半導体基板１ｅは第１槽１ａから
各部１ｇ、ｌｈ、ｌｉ、ｌｊに順に送られ、乾燥機１に
で洗浄工程は完了する。ここで第１槽１ａに入った基板
１ｅに有機物が付着していると、光源１ｂによって照射
されて基板１ｅは蛍光を発し、光電子倍増管により構成
される蛍光検出部１ｃで電気信号に変換され、電気信号
増中部１ｎで増巾された後、中央演算処理装置１ｐに伝
達され、中央演算処理装置ＩＰでは電気信号を受けて装
置の停止、又は警報の発生、又は薬液の自動交換等の必
要な処理を自動洗浄装置各部へ伝達して、汚染の拡大を
未然に防ぐことができる機構となっている。It is equipped with a fluorescence detection section 1c that detects fluorescence emitted from the substrate. Ig, lh, li, lj are the second to fifth tanks, and normally the second tank and the third tank are chemical liquid tanks, the fourth tank is a rinsing tank, and the fifth tank is a pure water tank, but the chemical liquid tank, It goes without saying that the effects of the present invention will not change even if the number of rinsing tanks and pure water tanks is further increased or decreased. 1 is a centrifugal dryer, and carriers 1d and semiconductor substrates 1e are sequentially sent from the first tank 1a to each section 1g, lh, li, lj by a carrier conveying device @IQ and a carrier conveying device arm 1f, and are sent to the dryer 1. The cleaning process is completed. If organic substances adhere to the substrate 1e that has entered the first tank 1a, the substrate 1e will be irradiated by the light source 1b and emit fluorescence, which will be converted into an electrical signal by the fluorescence detection section 1c constituted by a photomultiplier tube. , after being amplified by the electrical signal intensifier 1n, it is transmitted to the central processing unit 1p, and the central processing unit IP receives the electrical signal to stop the device, generate an alarm, or perform automatic chemical replacement, etc. This mechanism prevents the spread of contamination by transmitting the processing information to each part of the automatic cleaning equipment.
第２図は第１図の第１槽１ａを拡大したものであり、２
ａは励起部バンドパスフィルタ、 ２ｂは受光部バイパ
スフィルタである。これらはガラス面にタングステン等
の金属薄膜を蒸着したもので、第４図に励起部バンドパ
スフィルタ２ａの透過特性、第５図に受光部バイパスフ
ィルタ２ｂの透過特性を示すもので、前記ガラスフィル
タの透過波長は光源側のフィルタよりも蛍光検出部側の
フィルタの方が長いものである。Figure 2 is an enlarged view of the first tank 1a in Figure 1.
a is an excitation part bandpass filter, and 2b is a light receiving part bypass filter. These have a metal thin film such as tungsten deposited on a glass surface. Fig. 4 shows the transmission characteristics of the excitation part band pass filter 2a, and Fig. 5 shows the transmission characteristics of the light receiving part bypass filter 2b. The transmission wavelength of the filter on the fluorescence detection section side is longer than that on the light source side.
第４−において、４ａはネガタイプレジストを使用して
いるときのフィルタの透過特性であり、４ｂはポジタイ
プレジスト用のフィルタの透過特性である。In No. 4-, 4a is the transmission characteristic of the filter when using a negative type resist, and 4b is the transmission characteristic of the filter for positive type resist.
第５図において、 ５ａはネガタイプレジストを用いて
いるときの受光部フィルタの透過特性であり、５ｂはポ
ジタイプレジスト用のフィルタの透過特性である。使用
環境に応じて選択すればよい、第２図において、天蓋１
ｍはキャリア１ｄ及び基板１ｅを入れるときには開き、
検出中は第１槽１ａを密閉するものである。第２図にお
いて、光源１ｂは水銀ランプ又はハロゲンランプ又はク
セノンランプ等で構成されており、フィルタ２ａを透過
した所要の波長をもった光は基板１ｅに照射される。基
板１ｅに有機物、特にレジストが付着している場合には
蛍光を発し、バイパスフィルタ２ｂによって蛍光成分の
みを光電子倍増管などで構成される蛍光検出部１ｃで検
知する。In FIG. 5, 5a is the transmission characteristic of the light receiving filter when using a negative type resist, and 5b is the transmission characteristic of the filter for positive type resist. In Fig. 2, canopy 1 can be selected according to the usage environment.
m is opened when inserting the carrier 1d and the substrate 1e,
During detection, the first tank 1a is sealed. In FIG. 2, a light source 1b is composed of a mercury lamp, a halogen lamp, a xenon lamp, or the like, and light having a desired wavelength transmitted through a filter 2a is irradiated onto a substrate 1e. When an organic substance, particularly a resist, is attached to the substrate 1e, it emits fluorescence, and only the fluorescent component is detected by the fluorescence detection section 1c, which is composed of a photomultiplier tube or the like, through the bypass filter 2b.
第６図は本発明の必要性を示すグラフである。FIG. 6 is a graph showing the necessity of the present invention.
半導体基板上にフォトレジストが残留した状態で洗浄を
継続すると、薬液槽中に不純物であるナトリウムイオン
が蓄積することを示す０本発明の洗浄装置では残留レジ
ストがある基板を薬液中に浸すことはないため初期の清
浄な状態を保つことができる。This indicates that if cleaning is continued with photoresist remaining on the semiconductor substrate, sodium ions, which are impurities, will accumulate in the chemical bath.The cleaning apparatus of the present invention does not allow substrates with residual resist to be immersed in the chemical solution. This allows the initial clean state to be maintained.
第７図も同じく本発明の必要性を示すグラフである。洗
浄処理ロットが増えるに従い不純物である鉄イオンも増
加して行くが、１０ロツト目のフォトレジストの付着し
ているロフトを洗浄した直後は急激に不純物濃度が高ま
る（Ａ点）ことが判る。FIG. 7 is also a graph showing the necessity of the present invention. As the number of cleaning lots increases, the number of iron ions as impurities increases, but it can be seen that the impurity concentration increases rapidly (point A) immediately after cleaning the loft to which the 10th lot of photoresist is attached.
１１０ツト目以降のロットはこの高濃度の鉄イオンによ
って逆に汚染されてしまうが、本発明の洗浄装置では１
０ロツトのようなロットは第１槽目で検出して以降の処
理を中断するため、汚染を拡大することはない。Lots after the 110th batch are contaminated by this high concentration of iron ions, but with the cleaning device of the present invention, the 110th batch and subsequent batches are contaminated
Lots such as 0 lots are detected in the first tank and subsequent processing is interrupted, so contamination does not spread.
（実施例２） 第３図は本発明の実施例２を示す縦断面図である。(Example 2) FIG. 3 is a longitudinal sectional view showing a second embodiment of the present invention.
３ａはターンテーブル、３ｂは回転機構であり、ターン
テーブル３ａ上のキャリア１ｄ及び基板１ｅは天蓋１ｍ
に取付けられた光源１ｂによって照射中は回転機構３ｂ
によって回転する。この実施例では基板１ｅにあたる光
の角度が変化するため、より残留有機物の検出感度が上
がるという利点を有する。3a is a turntable, 3b is a rotation mechanism, and a carrier 1d and a substrate 1e on the turntable 3a have a canopy of 1 m.
During irradiation by the light source 1b attached to the rotating mechanism 3b
Rotate by. In this embodiment, since the angle of the light hitting the substrate 1e changes, there is an advantage that the detection sensitivity of residual organic matter is further increased.
以上説明したように本発明は半導体基板洗浄装置の第１
槽目におし７て半導体基板上の残留有機物、主にフォト
レジストの残留物を検知することができ、異常検出時に
装置の停止、警報の発報、洗浄薬液の自動交換等の動作
を行うことにより後続の被処理半導体基板を高濃度の不
純物で逆に汚染してしまうことを未然に防ぐことができ
る効果を有する。As explained above, the present invention is a first aspect of a semiconductor substrate cleaning apparatus.
It can detect residual organic matter, mainly photoresist residue, on semiconductor substrates by passing through the tank, and when an abnormality is detected, it can take actions such as stopping the equipment, issuing an alarm, and automatically replacing the cleaning chemical solution. This has the effect of preventing contamination of the subsequent semiconductor substrate to be processed with high concentration impurities.
第１図は本発明の実施例１を示す縦断面図、第２図は第
１図の第１槽の拡大詳細図、第３図は本発明の実施例２
を示す縦断面図、第４図は本発明の主要構成部品である
励起部バンドパスフィルタの光透過特性を示すグラフ、
第５図は同じく受光部バイパスフィルタの光透過特性を
示すグラフ、第６図は本発明の必要性を示す実験データ
を示すもので、横軸に洗浄処理した基板の枚数、縦軸に
洗浄溶液中に含まれる不純物イオン濃度を示すグラフ、
第７図は本発明の必要性を示すものであり、横軸に洗浄
処理したロット数、縦軸に不純物の鉄イオン濃度を示す
グラフ、第８図は従来の半導体基板自動洗浄装置を示す
縦断面図である。
ｌａ・・・第１槽（有機物検知槽） ｌｂ・・・光源
１ｃ・・・蛍光検出部 １ｄ・・・キャリア
ｌｅ・・・半導体基板 １ｆ・・・キャリア
搬送装置アーム１ｇ・・・第２槽（薬液槽）
ｌｈ・・・第３槽（薬液槽）１１・・・第４槽（リンス
槽）１ｊ・・・第５槽（純水槽）１ｋ・・・遠心乾燥機
Ｉｆｆ・・・キャリア搬送装置部１＋ｍ・
・・天蓋 １ｎ・・・電気信号増巾部
ＩＰ・・・中央演算処理装ｍ ２ａ・・・励起部
バンドパスフィルタ２ｂ・・・受光部バイパスフィルタ
３ａ・・・ターンテーブル３ｂ・・・回転機構FIG. 1 is a vertical sectional view showing Embodiment 1 of the present invention, FIG. 2 is an enlarged detailed view of the first tank in FIG. 1, and FIG. 3 is Embodiment 2 of the present invention.
FIG. 4 is a graph showing the light transmission characteristics of the excitation band-pass filter, which is the main component of the present invention.
Figure 5 is a graph showing the light transmission characteristics of the light-receiving bypass filter, and Figure 6 shows experimental data showing the necessity of the present invention.The horizontal axis shows the number of substrates cleaned, and the vertical axis shows the cleaning solution. A graph showing the concentration of impurity ions contained in the
Figure 7 shows the necessity of the present invention; the horizontal axis shows the number of cleaned lots and the vertical axis shows the impurity iron ion concentration. Figure 8 is a vertical cross-section showing a conventional semiconductor substrate automatic cleaning apparatus. It is a front view. la...First tank (organic substance detection tank) lb...Light source 1c...Fluorescence detection section 1d...Carrier le...Semiconductor substrate 1f...Carrier transport device arm 1g...Second tank (chemical tank)
lh...Third tank (chemical tank) 11...Fourth tank (rinsing tank) 1j...Fifth tank (pure water tank) 1k...Centrifugal dryer Iff...Carrier conveying device section 1+m.
...Canopy 1n...Electric signal amplification unit IP...Central processing unit m 2a...Excitation unit band pass filter 2b...Light receiving unit bypass filter 3a...Turntable 3b...Rotation mechanism
Claims (1)
する槽構造とし、該第１槽に、内部の半導体基板を照射
する光源と、照射された半導体基板より発する蛍光を検
出する蛍光検出部とを有することを特徴とする半導体基
板自動洗浄装置。(1) The first tank into which the semiconductor substrates are carried has a tank structure that is shielded from external light, and the first tank is equipped with a light source that irradiates the semiconductor substrates inside and detects the fluorescence emitted from the irradiated semiconductor substrates. 1. An automatic semiconductor substrate cleaning apparatus comprising a fluorescence detection section.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62323498A JPH01164039A (en) | 1987-12-21 | 1987-12-21 | Automatic washing apparatus of semiconductor substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62323498A JPH01164039A (en) | 1987-12-21 | 1987-12-21 | Automatic washing apparatus of semiconductor substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01164039A true JPH01164039A (en) | 1989-06-28 |
Family
ID=18155360
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62323498A Pending JPH01164039A (en) | 1987-12-21 | 1987-12-21 | Automatic washing apparatus of semiconductor substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01164039A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0631142U (en) * | 1992-09-25 | 1994-04-22 | 大日本スクリーン製造株式会社 | Substrate cleaning equipment |
| JPH07211689A (en) * | 1994-01-18 | 1995-08-11 | Shin Etsu Handotai Co Ltd | Wafer holder |
| US6153043A (en) * | 1998-02-06 | 2000-11-28 | International Business Machines Corporation | Elimination of photo-induced electrochemical dissolution in chemical mechanical polishing |
| US6376345B1 (en) | 1998-07-24 | 2002-04-23 | Hitachi Ltd. | Process for manufacturing semiconductor integrated circuit device |
-
1987
- 1987-12-21 JP JP62323498A patent/JPH01164039A/en active Pending
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0631142U (en) * | 1992-09-25 | 1994-04-22 | 大日本スクリーン製造株式会社 | Substrate cleaning equipment |
| JPH07211689A (en) * | 1994-01-18 | 1995-08-11 | Shin Etsu Handotai Co Ltd | Wafer holder |
| US6153043A (en) * | 1998-02-06 | 2000-11-28 | International Business Machines Corporation | Elimination of photo-induced electrochemical dissolution in chemical mechanical polishing |
| US6251787B1 (en) | 1998-02-06 | 2001-06-26 | International Business Machines Corporation | Elimination of photo-induced electrochemical dissolution in chemical mechanical polishing |
| US6376345B1 (en) | 1998-07-24 | 2002-04-23 | Hitachi Ltd. | Process for manufacturing semiconductor integrated circuit device |
| US6458674B1 (en) | 1998-07-24 | 2002-10-01 | Hitachi, Ltd. | Process for manufacturing semiconductor integrated circuit device |
| US6531400B2 (en) | 1998-07-24 | 2003-03-11 | Hitachi, Ltd. | Process for manufacturing semiconductor integrated circuit device |
| US6800557B2 (en) | 1998-07-24 | 2004-10-05 | Renesas Technology Corp. | Process for manufacturing semiconductor integrated circuit device |
| US7510970B2 (en) | 1998-07-24 | 2009-03-31 | Renesas Technology Corp. | Process for manufacturing semiconductor integrated circuit device |
| US7659201B2 (en) | 1998-07-24 | 2010-02-09 | Renesas Technology Corp. | Process for manufacturing semiconductor integrated circuit device |
| US8129275B2 (en) | 1998-07-24 | 2012-03-06 | Renesas Electronics Corporation | Process for manufacturing semiconductor integrated circuit device |
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