JPH01160826A - Preparation of oxide superconducting thin film - Google Patents
Preparation of oxide superconducting thin filmInfo
- Publication number
- JPH01160826A JPH01160826A JP62322169A JP32216987A JPH01160826A JP H01160826 A JPH01160826 A JP H01160826A JP 62322169 A JP62322169 A JP 62322169A JP 32216987 A JP32216987 A JP 32216987A JP H01160826 A JPH01160826 A JP H01160826A
- Authority
- JP
- Japan
- Prior art keywords
- film
- earth element
- oxide
- thin film
- superconducting thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims abstract description 17
- 239000010408 film Substances 0.000 claims abstract description 46
- 229910052802 copper Inorganic materials 0.000 claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 19
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000001301 oxygen Substances 0.000 claims abstract description 10
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 10
- 229910052761 rare earth metal Inorganic materials 0.000 claims abstract description 7
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 238000001704 evaporation Methods 0.000 claims description 3
- 238000010884 ion-beam technique Methods 0.000 claims description 2
- 238000007740 vapor deposition Methods 0.000 abstract description 15
- 238000000034 method Methods 0.000 abstract description 12
- 238000010438 heat treatment Methods 0.000 abstract description 11
- 229910002480 Cu-O Inorganic materials 0.000 abstract 1
- 239000002887 superconductor Substances 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 7
- 229910052788 barium Inorganic materials 0.000 description 6
- 229910052727 yttrium Inorganic materials 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052691 Erbium Inorganic materials 0.000 description 2
- 229910052693 Europium Inorganic materials 0.000 description 2
- 229910052688 Gadolinium Inorganic materials 0.000 description 2
- 229910052689 Holmium Inorganic materials 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- 229910052772 Samarium Inorganic materials 0.000 description 2
- 229910052769 Ytterbium Inorganic materials 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 230000001747 exhibiting effect Effects 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 229910052747 lanthanoid Inorganic materials 0.000 description 1
- 150000002602 lanthanoids Chemical class 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000000682 scanning probe acoustic microscopy Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- CYRMSUTZVYGINF-UHFFFAOYSA-N trichlorofluoromethane Chemical compound FC(Cl)(Cl)Cl CYRMSUTZVYGINF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
Landscapes
- Inorganic Compounds Of Heavy Metals (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
この発明は、酸化物超電導薄膜作成法に関するものであ
る。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a method for producing an oxide superconducting thin film.
［従来の技術］
従来、常電導から超電導へと転移する温度（以下］゛ｃ
と略記】が最も高いといわれていたＮｂ５Ｇ ｅでもＩ
−ｃ約２３にで、利用に際しては一般に高価な液体ヘリ
ウムを用いて冷却しなければならなかった。[Conventional technology] Conventionally, the temperature at which normal conductivity transitions to superconductivity (hereinafter referred to as ゛c)
Even in Nb5G e, which was said to have the highest
-c of about 23, and generally had to be cooled using expensive liquid helium.
これに対し、近年ベドノルツ（０ｃｄｎｏｒｚ）やミュ
ーラ−（Ｍ’ｕｌｌｅｒ）などによってＴ ｃが約３０
〜４０にである金属酸化物（１，ａ −［３ａ −Ｓ
ｒ −Ｃａ−Ｃｕ−０系）が見出された（雑誌； Ｚ、
Ｐｈｙｓ、 ８６４、１８９ （１９８６） ）、、そ
れに続いて％Ｍ、に、ウー（Ｍ、Ｋ、■Ｕ）などによっ
て′「ｃが８０〜９３に程度であるＹ −Ｂ ａ −Ｃ
ｕ −０系物質が発見され（雑誌：Ｐｈｙｓ、 Ｒｅｖ
、 Ｌｅｆｔ、、 ５８．９０８（＋９８７１） 、其
の後の検討でＹ Ｆ３ ａ ｚ Ｃｕ ｓ Ｏｙ （
［３≦ｙ≦７）組成近傍が最も良好な特性を示すことが
判明した。また、ＹをＬａ、Ｎｄ、Ｓｍ、Ｅｕ、Ｇｄ、
Ｈｏ、Ｅｒ、Ｙｂ、Ｌｕ等のランタノイドで置き換えて
も同様の特性が得られる。これらの超電導材料は冷媒と
して安価な液体窒素（沸点７７Ｋ）を用いることが１１
Ｊ能で、また、焼結体では７７Ｋにおける臨界電流密度
（以下Ｊｃと略記）がｉｏ’Ａ／ｃｍ冨以上であること
が確認されており、実用上極めて有用な特性をもつ、一
方、この物質の応用としては、ジョセフソン素子や＆ｊ
１気検出素子などへの適用司能性も薄膜形成技術を通し
て検討されてきており、この方面での開発も急速に進め
られている。On the other hand, in recent years, Bednorz and M'uller have shown that T c is about 30.
~40 metal oxides (1,a-[3a-S
r -Ca-Cu-0 system) was found (magazine; Z,
Phys, 864, 189 (1986)), followed by %M, and Wu (M, K, ■U) et al.
U-0 series substances were discovered (Magazine: Phys, Rev
, Left,, 58.908 (+9871) , In the later study, Y F3 az Cu s Oy (
It was found that the composition near [3≦y≦7) exhibited the best characteristics. In addition, Y is La, Nd, Sm, Eu, Gd,
Similar characteristics can be obtained by replacing it with lanthanoids such as Ho, Er, Yb, and Lu. These superconducting materials use inexpensive liquid nitrogen (boiling point 77K) as a refrigerant11.
It has been confirmed that the critical current density (hereinafter abbreviated as Jc) of the sintered body at 77K is more than io'A/cm, and has extremely useful properties in practice. Applications of materials include Josephson elements and &j
The application of this technology to 1-chip detection elements has also been investigated through thin film formation technology, and development in this direction is progressing rapidly.
この物質の薄膜化に対していくつかの方法が提案されて
おり、代表的な例としては蒸着法が挙げられ、Ｍａ、Ｌ
ｎ、Ｃｕそれぞれの金属またはその化合物を蒸着源とし
て、抵抗または電子ビームなどにより加熱し、三元同時
蒸着するなどの方法が採られてきている。基板に付着し
た膜を酸素雰囲気中で約９００℃程度に加熱すると、Ｍ
ａ−Ｌｎ −Ｃｕ −０のペロブスカイト型化合物が得
られ。Several methods have been proposed for making thin films of this substance, and a typical example is vapor deposition.
Methods have been adopted in which metals such as n and Cu or their compounds are used as vapor deposition sources and heated with a resistor or an electron beam to carry out ternary simultaneous vapor deposition. When the film attached to the substrate is heated to about 900°C in an oxygen atmosphere, M
A perovskite type compound of a-Ln-Cu-0 was obtained.
しかも、最も単純な成膜方法であるため、比較的簡便に
作成できるなどの利点がある。Moreover, since it is the simplest film forming method, it has the advantage that it can be produced relatively easily.
［発明が解決しようとする問題点］
従来の三元同時蒸着法による酸化物超電導薄膜作成法は
以上のようであるので、Ｍａ、Ｌｎ、ＣＵの三元素が混
然一体となって基板に接して生じる。これらの元素のう
ちＭａ、Ｌｎは化学的な反応性が著しく高い物質である
ことが知られているが、特に成膜後の酸素雰囲気中での
熱処理においては、高温下で基板材料と激しく反応し、
基板成分の酸化物超電導膜内への拡散や、その結果生じ
る所望以外の化合物の生成などが起こるなどの問題点が
あった。[Problems to be solved by the invention] As described above, the conventional ternary simultaneous vapor deposition method for producing an oxide superconducting thin film is such that the three elements Ma, Ln, and CU come into contact with the substrate in a mixed manner. occurs. Among these elements, Ma and Ln are known to have extremely high chemical reactivity, but they react violently with the substrate material at high temperatures, especially during heat treatment in an oxygen atmosphere after film formation. death,
There have been problems such as diffusion of substrate components into the oxide superconducting film and the resulting formation of undesired compounds.
この発明は上記のような問題点を解消するためになされ
たもので、酸素雰囲気中での熱処理に伴う基板とＭａや
Ｌｎとの反応を防止することにより、熱処理後に良質の
Ｍａ−Ｌｎ−Ｃｕ−０系の酸化物超電導薄膜を得ること
を目的とする。This invention was made to solve the above problems, and by preventing the reaction between the substrate and Ma and Ln during heat treatment in an oxygen atmosphere, high quality Ma-Ln-Cu can be produced after heat treatment. The purpose is to obtain a -0-based oxide superconducting thin film.
Ｌ問題点を解決するための手段］
この発明に係る酸化物超電導薄膜作成法は、基板にＣｕ
またはＣｕ酸化物の膜を作成する工程、上記Ｃｕまたは
Ｃｕ酸化物の膜に上記Ｃｕ、Ｍａ、およびＬｎの三元同
時蒸着膜を作成する工程、並びに」二記三元同時蒸着膜
を酸素雰囲気中で熱処理する工程を順に施すものである
。[Means for solving the L problem] The method for producing an oxide superconducting thin film according to the present invention includes
or a step of creating a film of Cu oxide, a step of creating a ternary co-deposited film of Cu, Ma, and Ln on the Cu or Cu oxide film, and a step of depositing the two ternary co-deposited films in an oxygen atmosphere. In this process, heat treatment steps are performed in order.
［作用］
この発明におけるＣｕまたはＣ１１酸化物膜は、Ｍａ、
Ｌｎと基板との直接反応を防止する。また、Ｃｕまたは
Ｃｕ酸化物の膜は超電導相の成分であるから、熱処理中
に酸化物超電導薄膜中に拡散しても悪影響は小さい６
［実施例］
以下、この発明の一実施例を図について説明する。[Function] The Cu or C11 oxide film in this invention has Ma,
Prevents direct reaction between Ln and the substrate. In addition, since the Cu or Cu oxide film is a component of the superconducting phase, even if it diffuses into the oxide superconducting thin film during heat treatment, there will be little adverse effect6. explain.
実施例１
第１図はこの発明の一実施例に係る三元同時蒸着装置を
示す断面図である。ルツボ（１）〜（３）にそれぞれＹ
、Ｂａ、およびＣｕ金属を充填し、真空外容器（４）を
高真空（〜ｌ Ｏ−”ｔｏｒｒ）とした後、ヒータ（５
）〜（７）でルツボ（１）〜（３）を加熱して各金属を
蒸発せしめる。この時ヒータ（５）〜（７）に流れる電
流を電流制御器（８）〜（１０）で制御卸し、各金属の
蒸発速度をそれぞれ独立に変化させる。Embodiment 1 FIG. 1 is a sectional view showing a ternary simultaneous vapor deposition apparatus according to an embodiment of the present invention. Y for each crucible (1) to (3)
After filling the outer vacuum container (4) with metals such as , Ba, and Cu and making the outer vacuum container (4) a high vacuum (~l O-”torr), the heater (5
) to (7), the crucibles (1) to (3) are heated to evaporate each metal. At this time, the current flowing through the heaters (5) to (7) is controlled by current controllers (8) to (10), and the evaporation rate of each metal is changed independently.
各元素の蒸発速度は、水晶振動子式膜厚計（１１）〜（
１３）により計測され、電流制御器（８）〜（１ｏ）に
フィードバックされてＲ幣される。 （１４１〜（！６
）はシャッタである。The evaporation rate of each element is calculated from the quartz crystal film thickness meter (11) to (
13), and is fed back to the current controllers (8) to (1o). (141~(!6
) is the shutter.
次に、作成法について説明する。シャッタ（１４）を開
はヒータ（５）でルツボ（１）を加熱し、例えばサファ
イアよりなる基板（１７）に先ずＣｕを約０．５μｍ蒸
着した上にＹ、Ｂａ、Ｃｕを電流側！、１１１２ｉ！＋
８）〜（１０）と膜厚計（Ｉｔ） 〜（＋３）を使用し
てＹ：Ｂａ：Ｃｕ与１：２：３（モル比）になるように
さらに約１ｔＬｍ三元同時に堆積させ、この三元同時蒸
着膜を酸素雰囲気中で約９００℃、１時間加熱後１００
℃／時間で徐冷し、この抵抗温度特性を計測したところ
、約８０にのＴ ｃをもつ超電導特性を示す膜となった
。第２図はこの膜のオージェ分析の結果であるが、Ｃｕ
１ｌｉｉｉの効果で基板（１７）成分（ＡＩ）の酸化物
超電導膜内への拡散は殆ど見られない。Next, the creation method will be explained. To open the shutter (14), the crucible (1) is heated with a heater (5), and on the substrate (17) made of, for example, sapphire, Cu is first deposited to a thickness of about 0.5 μm, and then Y, Ba, and Cu are deposited on the current side! , 1112i! +
Using 8) to (10) and a film thickness meter (It) to (+3), approximately 1 tLm of Y:Ba:Cu is deposited simultaneously at the same time so that the Y:Ba:Cu ratio is 1:2:3 (molar ratio). After heating the ternary co-deposited film at approximately 900°C for 1 hour in an oxygen atmosphere,
When the film was slowly cooled at a rate of 0.degree. C./hour and its resistance-temperature characteristics were measured, it was found to be a film exhibiting superconducting characteristics with a Tc of about 80. Figure 2 shows the results of Auger analysis of this film.
Due to the effect of 1liii, hardly any diffusion of the substrate (17) component (AI) into the oxide superconducting film is observed.
なお、あらかじめ蒸着する物質なＣｕの酸化物としたも
のも、基本的には同様な超電導特性と膜内組成をもっこ
とを確認した。It was also confirmed that the superconducting property and the composition in the film were basically the same when using Cu oxide, which is a material to be vapor-deposited in advance.
実施例２
第３図はこの発明の他の実施例に係るクラスタ・イオン
ビーム（以下■ＣＢと略す）法による三元同時蒸着装置
を示す断面図である。ルツボ（１１〜（３）にそれぞれ
Ｃｕ、Ｙ、１３ａ金属を充填し、これを高具空とした後
ヒータ（５）を加熱して先ず（：１１を蒸発させ、また
同時に電子シャワーをイオン化フィラメント（１８）〜
（２０）から照射してクラスタイオンとし、直流電源（
２１）によりこれに数ＫＶの電圧を印加して加速し、シ
ャッタ（１４）を開けた状態でサファイア基板（！７）
に付着させる。この膜が約０．３μｍとなったところで
他のルツボ（２）。Embodiment 2 FIG. 3 is a sectional view showing a ternary simultaneous vapor deposition apparatus using a cluster ion beam (hereinafter abbreviated as CB) method according to another embodiment of the present invention. The crucibles (11 to (3)) are filled with Cu, Y, and 13a metals, and after emptying the crucibles, the heater (5) is heated to evaporate (:11), and at the same time, the electron shower is transferred to the ionized filament. (18)～
(20) to form cluster ions, which are then irradiated from a DC power source (
21), the sapphire substrate (!7) is accelerated by applying a voltage of several KV to it, and the shutter (14) is opened.
attach it to. When this film reaches approximately 0.3 μm, move to another crucible (2).
（３）をヒータ（６１、＋７）で加熱し、電子シャワー
（１９＋、 （２０１により同様にクラスタイオンを
形成させ、シャッタ（１４）を全開してこれを三元同時
蒸着する。この時、膜厚計（１■）〜（Ｉ３）と電流制
御器（８）〜（ｌＯ）で蒸着速度を制御し、Ｙ：Ｂａ：
Ｃｕ’＝１：２：３ （モル比）となるようにヒータ温
度および加速電圧を調整した。 （２２）は加速電極で
ある。(3) is heated with heaters (61, +7), cluster ions are similarly formed by electron showers (19+, (201), and the shutter (14) is fully opened to perform ternary simultaneous vapor deposition. At this time, the film is The deposition rate was controlled using the thickness gauges (1■) to (I3) and the current controllers (8) to (lO), and Y:Ba:
The heater temperature and accelerating voltage were adjusted so that Cu'=1:2:3 (molar ratio). (22) is an accelerating electrode.
この膜を実施例１と同様に熱処理し、Ｔｃを計測したと
ころ、約８５Ｋが得られた。また、オージェによる厚さ
方向の元素分布も、傾向は基本的には第２図と一致して
おり、Δｌの校内拡散は殆ど見られなかった。When this film was heat treated in the same manner as in Example 1 and the Tc was measured, approximately 85K was obtained. Furthermore, the tendency of the element distribution in the thickness direction according to Auger is basically the same as that shown in FIG. 2, and almost no intra-dimensional diffusion of Δl was observed.
比較例
サファイア基板（１７）に第１図に示す装置によりＹ、
Ｂａ、ＣｕをＹ：Ｂａ：Ｃｕ’：ｌ ：２：３ （モル
比）で約１６ｍの厚さで三元同時蒸着を行ない、酸素雰
囲気中で約９００℃、１時間加熱後、■００℃／時間で
徐冷した。このようにして得られた膜にＡｕ電極をつけ
四探針法で低温特性を計測したところ、全く超電導現象
を示さなかった。Comparative Example: Y was applied to the sapphire substrate (17) using the apparatus shown in FIG.
Ba and Cu were ternary co-evaporated to a thickness of about 16 m at Y:Ba:Cu':l :2:3 (molar ratio), and after heating at about 900°C for 1 hour in an oxygen atmosphere, ■ 00°C /hour. When the film thus obtained was attached with an Au electrode and its low-temperature properties were measured using the four-probe method, no superconductivity was observed.
また、この膜をオージェ分光法により分析したところ第
４図に示すように、サファイア基板の！成分であるＡＩ
が原着膜中に広く拡散していることが判明した。Furthermore, when this film was analyzed by Auger spectroscopy, as shown in Figure 4, it was found that the ! AI as a component
was found to be widely diffused in the deposited film.
なお、上記実施例では蒸着源としてＹ、Ｂａ。Note that in the above embodiments, Y and Ba are used as vapor deposition sources.
Ｃｕの金屑をそれぞれ用いた場合について説明したが、
これらの化合物をそれぞれ用いてもよく、上記実施例と
同様の効果を奏する。The case where Cu gold scraps were used was explained, but
These compounds may be used individually, and the same effects as in the above embodiments can be obtained.
また、上記実施例では成分系としてＹ−Ｂａ−Ｃｕ−０
系の場合を示したが％Ｙを例えばＬａ。In addition, in the above example, the component system is Y-Ba-Cu-0
Although the case of the system is shown, %Y is, for example, La.
Ｎｄ、Ｓｍ、Ｅｕ、Ｇｄ、Ｄｙ、Ｈｏ、Ｅｒ、Ｙｂ、Ｌ
ｕ等の他の希土類元素、Ｂａを例えばＳｒ等の他のアル
カリ土類元素で置き換えたＬｎ−Ｍａ−Ｃｕ−０系の場
合でも同様の効果を奏する。Nd, Sm, Eu, Gd, Dy, Ho, Er, Yb, L
Similar effects can be obtained even in the case of Ln-Ma-Cu-0 series in which other rare earth elements such as u or Ba are replaced with other alkaline earth elements such as Sr.
また、上記実施例では基板（１７）としてサファイアを
用いた場合を示したが、ＳｉやＳｉＯやガラスなどであ
ってもよく、上記実施例と同様の効果が得られる。Further, in the above embodiment, a case was shown in which sapphire was used as the substrate (17), but it may also be made of Si, SiO, glass, etc., and the same effects as in the above embodiment can be obtained.
また、上記実施例では先ず基板（１７）にＣ１１を蒸着
後、連続的にＣｕ、Ｙ、Ｂａを三元同時蒸着したが、Ｃ
ｕを蒸着後、酸素雰囲気中で熱処理し、Ｃｕ酸化物膜と
した上にＣｕ、Ｙ、Ｂａを三元同時蒸着する方法を用い
ても上記実施例と同様の効果がｉｒＪられる。In addition, in the above example, first, C11 was deposited on the substrate (17), and then Cu, Y, and Ba were ternary simultaneously deposited, but C
The same effect as in the above embodiment can be obtained by using a method of ternary simultaneous vapor deposition of Cu, Y, and Ba on a Cu oxide film formed by heat treatment in an oxygen atmosphere after vapor deposition of u.
［発明の効果］
以上のように、この発明によれば、基板にＣｕまたはＣ
ｕ酸化物の膜を作成する工程、上記ＣｕまたはＣｕ酸化
物の膜に上記Ｃｕ％Ｍａ、およびＬｎの三元同時蒸着膜
を作成する工程、並びに上記三元同時蒸着膜を酸素雰囲
気中で熱処理する工程を順に施すので、熱処理に伴う基
板とＭａやＬｎとの反応を防ぐことができ、良好な超電
導特性を示す酸化物超電導薄膜が得られる効果がある。[Effects of the Invention] As described above, according to the present invention, the substrate is coated with Cu or C.
A step of creating a film of u oxide, a step of creating a ternary co-deposited film of Cu%Ma and Ln on the Cu or Cu oxide film, and heat treatment of the ternary co-deposited film in an oxygen atmosphere. Since the steps are performed in sequence, it is possible to prevent the reaction between the substrate and Ma or Ln during heat treatment, and there is an effect that an oxide superconducting thin film exhibiting good superconducting properties can be obtained.
第１図はこの発明の一実施例に係る三元同時蒸着装置を
示す断面図、第２図はこの発明の一実施例による方法で
作成された酸化物超電導薄膜の厚み方向の元素分布を示
す特性図、第３図はこの発明の他の実施例に係るＩＣＢ
法による三元同時蒸着装置を示す断面図、第４図は比較
例による膜の厚み方向の元素分布を示す特性図である。
図において、（＋）〜（３）はルツボ、（５）〜（７）
はヒータ、（８）〜（ｌＯ）は電流制御器、（１１）〜
（１３）は膜厚計、（１４）〜（■６）はシャッタ、（
１７）は基板、（１８）〜（２０）はイオン化フィラメ
ント、（２２）は加速電極である。
なお、各図中同一符号は同一または相当部分を示す。
第１図
１〜３ ニルツボ゛
ｊ２７：ヒー７
Ｉ４−１６：シマ゛ツタ
１７：基板
第２図
第３図
１Ｆ〜２θ、１ｔノ化フイラメシＦ
、７２ ： ／７Ｕ遣電極
第４図FIG. 1 is a cross-sectional view showing a ternary simultaneous vapor deposition apparatus according to an embodiment of the present invention, and FIG. 2 is a diagram showing the element distribution in the thickness direction of an oxide superconducting thin film produced by the method according to an embodiment of the present invention. The characteristic diagram, FIG. 3, is an ICB according to another embodiment of the present invention.
FIG. 4 is a cross-sectional view showing a ternary simultaneous vapor deposition apparatus using the method, and FIG. 4 is a characteristic diagram showing the element distribution in the thickness direction of a film according to a comparative example. In the figure, (+) to (3) are crucibles, (5) to (7)
is a heater, (8) to (lO) are current controllers, (11) to
(13) is a film thickness meter, (14) to (■6) are shutters, (
17) is a substrate, (18) to (20) are ionization filaments, and (22) is an accelerating electrode. Note that the same reference numerals in each figure indicate the same or corresponding parts. Figures 1 to 3 Nirutsubo j27: Heater 7 I4-16: Shima Ivy 17: Board Figure 2 Figure 3
Claims (2)
び希土類元素（以下Ｌｎと略す）を成分として有する酸
化物超電導薄膜を作成するものにおいて、基板にＣｕま
たはＣｕ酸化物の膜を作成する工程、上記ＣｕまたはＣ
ｕ酸化物の膜に上記Ｃｕ、Ｍａ、およびＬｎの三元同時
蒸着膜を作成する工程、並びに上記三元同時蒸着膜を酸
素雰囲気中で熱処理する工程を順に施す酸化物超電導薄
膜作成法。(1) For creating an oxide superconducting thin film containing Cu, an alkaline earth element (hereinafter abbreviated as Ma), and a rare earth element (hereinafter abbreviated as Ln) as components, a Cu or Cu oxide film is created on a substrate. Step, the above Cu or C
A method for producing an oxide superconducting thin film, which comprises sequentially performing a step of forming a ternary co-deposited film of Cu, Ma, and Ln on a u oxide film, and a step of heat-treating the ternary co-deposited film in an oxygen atmosphere.
およびＬｎの三元同時蒸着膜は、クラスタ・イオンビー
ム蒸着法により作成される特許請求の範囲第１項記載の
酸化物超電導薄膜作成法。(2) Cu or Cu oxide film, as well as Cu, Ma,
2. The method for producing an oxide superconducting thin film according to claim 1, wherein the ternary co-deposited film of Ln and Ln is produced by a cluster ion beam evaporation method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62322169A JPH01160826A (en) | 1987-12-17 | 1987-12-17 | Preparation of oxide superconducting thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62322169A JPH01160826A (en) | 1987-12-17 | 1987-12-17 | Preparation of oxide superconducting thin film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01160826A true JPH01160826A (en) | 1989-06-23 |
Family
ID=18140707
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62322169A Pending JPH01160826A (en) | 1987-12-17 | 1987-12-17 | Preparation of oxide superconducting thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01160826A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102834879A (en) * | 2010-04-26 | 2012-12-19 | 株式会社藤仓 | Oxide superconducting conductor and production method therefor |
-
1987
- 1987-12-17 JP JP62322169A patent/JPH01160826A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102834879A (en) * | 2010-04-26 | 2012-12-19 | 株式会社藤仓 | Oxide superconducting conductor and production method therefor |
| US8772201B2 (en) | 2010-04-26 | 2014-07-08 | Fujikura Ltd. | Oxide superconducting conductor and method of manufacturing the same |
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