JPH01153573A - Sintered aln material - Google Patents
Sintered aln materialInfo
- Publication number
- JPH01153573A JPH01153573A JP62313427A JP31342787A JPH01153573A JP H01153573 A JPH01153573 A JP H01153573A JP 62313427 A JP62313427 A JP 62313427A JP 31342787 A JP31342787 A JP 31342787A JP H01153573 A JPH01153573 A JP H01153573A
- Authority
- JP
- Japan
- Prior art keywords
- tin
- aln
- thermal conductivity
- weight
- sintered body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 title abstract description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000000758 substrate Substances 0.000 abstract description 14
- 239000000203 mixture Substances 0.000 abstract description 8
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 239000012298 atmosphere Substances 0.000 abstract description 3
- 230000001590 oxidative effect Effects 0.000 abstract description 3
- 239000002994 raw material Substances 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 13
- 238000000034 method Methods 0.000 description 9
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 6
- 239000007789 gas Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000001465 metallisation Methods 0.000 description 4
- 238000004040 coloring Methods 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000010304 firing Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- QYEXBYZXHDUPRC-UHFFFAOYSA-N B#[Ti]#B Chemical compound B#[Ti]#B QYEXBYZXHDUPRC-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910033181 TiB2 Inorganic materials 0.000 description 1
- 229910008484 TiSi Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 230000003466 anti-cipated effect Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910002090 carbon oxide Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000004453 electron probe microanalysis Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000010298 pulverizing process Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
- C04B35/581—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on aluminium nitride
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Ceramic Products (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は半導体素子の実装用基板などとして用いられる
ＡｌＮ質焼結体に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an AlN sintered body used as a substrate for mounting semiconductor elements.
半導体素子の実装用基板としては、アルミナ基板が多用
されてきた。これに対して、実装基板の放熱特性をより
改善するために、最近では熱伝導率がアルミナの５〜１
０倍高く、かつ高絶縁性で低誘電率という特性を有する
ＡｕＮ基板が開発されている。ただし、ＡｕＮ基板を実
用化するにあたっては、メタライズ技術の面で解決すべ
き以下のような問題点がある。Alumina substrates have been frequently used as substrates for mounting semiconductor devices. On the other hand, in order to further improve the heat dissipation characteristics of the mounting board, alumina has recently been developed with a thermal conductivity of 5 to 1.
An AuN substrate has been developed that has characteristics of 0 times higher dielectric constant, high insulating property, and low dielectric constant. However, in putting the AuN substrate into practical use, there are the following problems that need to be solved in terms of metallization technology.
まず、実装基板にメタライズを行う場合、現在では赤外
線を利用した位置決めセンサを使用している。ところが
、従来の高熱伝導性ＡｕＮ基板は白色で透光性があるう
え、色ムラがあったり透光性が不均一であるなど外観不
良が多い、このため、／ＩＩＮ基板のメタライズを行う
場合、赤外線センサによる正確な位置検出が困難であっ
た。−方、赤外線センサによる位置検出が容易な灰色〜
黒灰色を呈するＡｌＮも知られているが、このようなＡ
ＲＮは熱伝導率がそれほど高くない。First, when metallizing a mounting board, a positioning sensor that uses infrared light is currently used. However, conventional high thermal conductivity AuN substrates are white and translucent, and often have poor appearance such as uneven color and uneven translucency.For this reason, when metalizing /IIN substrates, Accurate position detection using infrared sensors was difficult. -On the other hand, the color is gray, which makes it easy to detect the position using an infrared sensor.
AlN that exhibits a black-gray color is also known;
RN does not have very high thermal conductivity.
次に、ＡｕＮ基板のメタライズ技術としては、従来、■
Ａｇ、Ａｇ−Ｐｄ、Ｃｕなどのペーストを使用する厚膜
法、■ＡｆＬＮ基板の表面にＣｕ−０系の共晶を利用し
て銅板を直接接合するＤＢＣ（Ｄｉｒｅｃｔ Ｂｏｎｄ
Ｃｏｐｐｅｒ）法、が知られている。しかし、従来の
ＡｕＮ基板に厚膜法を適用した場合、接合強度が２ｋｇ
／ｍｍ２程度と弱いという問題があった。また、従来の
ＡｕＮ基板にＤＢＣ法を適用した場合、熱サイクルに弱
いという問題があった。更に、従来のＡｕＮ基板にこれ
らの技術を適用した場合、いずれもメタライズ層にろう
付けや高温はんだ付けをすることができなかった。Next, the conventional metallization technology for AuN substrates is
Thick film method using pastes such as Ag, Ag-Pd, Cu, etc.; DBC (Direct Bond), which uses Cu-0 based eutectic to directly bond a copper plate to the surface of an AfLN substrate;
Copper) method is known. However, when applying the thick film method to a conventional AuN substrate, the bonding strength is 2 kg.
There was a problem that it was weak at about /mm2. Further, when the DBC method was applied to a conventional AuN substrate, there was a problem that it was susceptible to thermal cycles. Furthermore, when these techniques are applied to conventional AuN substrates, it is not possible to braze or high-temperature solder the metallized layer.
なお、ＡｌＮ基板については、従来より更に熱伝導性を
向上させることが望ましいことは勿論である。It goes without saying that it is desirable to further improve the thermal conductivity of the AlN substrate compared to the conventional one.
本発明は上記問題点を解決するためになされたものであ
り、メタライズの位置決めが容易で、しかもメタライズ
層の接合強度を向上することができ、更には熱伝導率も
従来より高いＡｌＮ質焼結体を提供することを目的とす
る。The present invention was made in order to solve the above problems, and it is possible to easily position the metallized layer, improve the bonding strength of the metallized layer, and furthermore, the AlN sintered material has higher thermal conductivity than before. The purpose is to provide the body.
〔問題点を解決するための手段と作用〕本発明（１）Ａ
ｌＮ質焼結体は、Ｙ２Ｏ３１〜１０重量％、ＴｉＮ０．
１〜１５重量％、残部Ａ文Ｎからなることを特徴とする
ものである。−
本発明のＡｌＮ焼結体は各原料を上記の割合で配合し、
混合・粉砕した後、成形し、真空中又は非酸化性ガス雰
囲気中、１７００〜１９００℃で焼成することにより製
造することができる。非酸化性ガスとしては、アルゴン
ガス、−酸化炭素ガス、ヘリウムガスなどを挙げること
ができる。[Means and effects for solving the problems] Present invention (1) A
The 1N sintered body contains 1 to 10% by weight of Y2O3 and 0.0% by weight of TiN.
It is characterized in that it consists of 1 to 15% by weight and the remainder A and N. - The AlN sintered body of the present invention is prepared by blending each raw material in the above ratio,
It can be produced by mixing and pulverizing, shaping, and firing at 1700 to 1900°C in vacuum or in a non-oxidizing gas atmosphere. Examples of the non-oxidizing gas include argon gas, -carbon oxide gas, and helium gas.
また、本発明のＡｌＮ質焼結体に適用するメタライズ技
術としては、Ｍｏなどを用いた高融点金属法が望ましい
が、厚膜法やＤＢＣ法を適用することもできる。Further, as the metallization technique applied to the AlN sintered body of the present invention, a high melting point metal method using Mo or the like is preferable, but a thick film method or a DBC method can also be applied.
本発明において、Ｙ２Ｏ３は焼結助剤として作用する。In the present invention, Y2O3 acts as a sintering aid.
Ｙ２Ｏ３の組成を１〜ｌＯ重量％としたのは、１重量％
未満では緻密な焼結体を得ることができず、一方１０重
量％を超えると熱伝導率が低下し、色ムラが発生すると
ともに、コスト高にもなるなどの理由による。The composition of Y2O3 is 1 to 10% by weight, which is 1% by weight.
If it is less than 10% by weight, a dense sintered body cannot be obtained, while if it exceeds 10% by weight, the thermal conductivity will decrease, color unevenness will occur, and the cost will increase.
本発明において、ＴｉＮはＡｆＬＮ質焼結体を着色させ
、メタライズ層との接合強度を向上させるとともに、熱
伝導率をより一層高める作用を有する。なお、Ｘ線回折
やＥＰＭＡによれば、ＴｉＮはＡ！；ＬＮと固溶せず、
焼結助剤であるＹ２Ｏ３とも反応せず、Ａ９．Ｈの粒界
に単層で存在することが確認されている。また、メタラ
イズを行うと、焼結体中のＴｉＮが焼結体とメタライズ
層との境界に移動し、Ａ見Ｎ−ＴｉＮ−金属層が形成さ
れ、ＴｉＮ層を介して接合がなされる。In the present invention, TiN has the effect of coloring the AfLN sintered body, improving the bonding strength with the metallized layer, and further increasing the thermal conductivity. Furthermore, according to X-ray diffraction and EPMA, TiN is A! ; Does not form solid solution with LN;
It does not react with Y2O3, which is a sintering aid, and A9. It has been confirmed that it exists in a single layer at the grain boundaries of H. Furthermore, when metallization is performed, TiN in the sintered body moves to the boundary between the sintered body and the metallized layer, forming an A-N-TiN-metal layer and bonding via the TiN layer.
本発明において、ＴｉＮの組成を０．１〜１５重量％と
したのは以下のような理由による。すなわち、０．１重
量％未満では焼結体が着色せず、メタライズ層の接合強
度も低下する。一方、１５重量％を超えると熱伝導率が
著しく低下し、メタライズ層の接合強度も低下する。な
お、焼結体の着色の観点からは、ＴｉＮの組成は０．５
〜１５重量％であることが望ましい、また、メタライズ
層の接合強度の観点からは、ＴｉＮの組成は３〜１５重
量％であることが望ましい、また、熱伝導率の観点から
は、ＴｉＮの組成は０．１〜５重量％であることが望ま
しい。In the present invention, the reason why the composition of TiN is set to 0.1 to 15% by weight is as follows. That is, if it is less than 0.1% by weight, the sintered body will not be colored and the bonding strength of the metallized layer will also decrease. On the other hand, if it exceeds 15% by weight, the thermal conductivity will drop significantly and the bonding strength of the metallized layer will also drop. In addition, from the viewpoint of coloring the sintered body, the composition of TiN is 0.5
From the viewpoint of bonding strength of the metallized layer, the composition of TiN is preferably from 3 to 15% by weight.Also, from the viewpoint of thermal conductivity, the composition of TiN is preferably 0.1 to 5% by weight.
なお、上述したＴｉＮの作用と同様の作用はＴｉＯ２，
Ｔｉｃ、ＴｉＳｉ、ＴｉＢ２などでも発揮し得る可能性
については充分予想される。ただし、ＴｉＯ２を用いた
場合には、焼成時にＴｉＯ２の酸素がＡＭＮの窒素と入
れ換わってＴｉＮとなり、ＡｌＮ中に酸素が固溶して熱
伝導率が著しく低下するため不利である。Note that the same effect as that of TiN mentioned above is obtained by TiO2,
It is fully anticipated that Tic, TiSi, TiB2, etc. may also be used. However, when TiO2 is used, oxygen in TiO2 is replaced with nitrogen in AMN during firing to form TiN, which is disadvantageous because oxygen is dissolved in AlN and the thermal conductivity is significantly reduced.
以下、本発明の詳細な説明する。 The present invention will be explained in detail below.
第１表に示すように、Ａｎ Ｎ、 Ｙ ２０３及びＴ
ｉ Ｎを所定の割合で配合し、混合・粉砕した。As shown in Table 1, An N, Y 203 and T
iN was blended in a predetermined ratio, mixed and pulverized.
これらをそれぞれ直径１６■層、厚さ８１■の円柱状に
成形した後、窒素雰囲気中、１７５０℃で１時間焼成し
てＡｆＬＮ質焼結体を製造した。Each of these was formed into a cylindrical shape with a diameter of 16 layers and a thickness of 81 mm, and then fired at 1750° C. for 1 hour in a nitrogen atmosphere to produce an AfLN sintered body.
得られた各焼結体の色調及び熱伝導率を第１表に示す。Table 1 shows the color tone and thermal conductivity of each of the obtained sintered bodies.
マタ、Ｙ２Ｏ３５重量％、Ｔ ｉ Ｎ Ｏ，１〜１５ｉ
量％、残部ＡｌＮの焼結体について、２００メツシユの
スクリーンを用いてＭＯペーストをスクリーン印刷し、
乾燥した後、水素炉内に装入し、Ｎ２−Ｈ２雰囲気中、
１４００℃で焼き付けた０次いで、Ｎｉめっきを施した
後、ピンをはんだ付けし、引張り強さを調べた。この結
果を第１表に示す。Mata, Y2O35% by weight, T i N O, 1-15i
MO paste was screen printed using a 200 mesh screen for the sintered body with the remaining amount of AlN,
After drying, it was charged into a hydrogen furnace and heated in an N2-H2 atmosphere.
After baking at 1400° C. and Ni plating, the pins were soldered and the tensile strength was examined. The results are shown in Table 1.
第 １ 表
〔発明の効果〕
以上詳述したように本発明のＡｆＬＮ焼結体では、着色
によりメタライズの位置決めが容易となり、メタライズ
層の接合強度が向上し、更に熱伝導率も従来よりも高く
なる。したがって、半導体素子の実装基板などとしての
実用化という点で、その工業的価値は極めて高い。Table 1 [Effects of the Invention] As detailed above, in the AfLN sintered body of the present invention, the coloring makes it easier to position the metallized layer, the bonding strength of the metallized layer is improved, and the thermal conductivity is also higher than before. Become. Therefore, its industrial value is extremely high in terms of its practical use as a mounting board for semiconductor elements.
出願人代理人 弁理士 鈴江武彦Applicant's agent: Patent attorney Takehiko Suzue
Claims (1)
重量％、残部ＡｌＮからなることを特徴とするＡｌＮ質
焼結体。Y_2O_3 1-10% by weight, TiN 0.1-15
An AlN-based sintered body characterized in that the balance by weight is AlN.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62313427A JPH01153573A (en) | 1987-12-11 | 1987-12-11 | Sintered aln material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62313427A JPH01153573A (en) | 1987-12-11 | 1987-12-11 | Sintered aln material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01153573A true JPH01153573A (en) | 1989-06-15 |
Family
ID=18041166
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62313427A Pending JPH01153573A (en) | 1987-12-11 | 1987-12-11 | Sintered aln material |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01153573A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01197364A (en) * | 1988-02-03 | 1989-08-09 | Sumitomo Electric Ind Ltd | Colored ceramic sintered body |
| JP2006251784A (en) * | 2005-02-09 | 2006-09-21 | Dainippon Printing Co Ltd | Multi-pattern bright sled and bright multi-pattern product using the same |
| WO2012123413A1 (en) * | 2011-03-11 | 2012-09-20 | Ceramtec Gmbh | Coil bodies having a ceramic core |
| JP2018184316A (en) * | 2017-04-25 | 2018-11-22 | 株式会社Maruwa | Aluminum nitride sintered body and manufacturing method thereof |
| US11319254B2 (en) | 2018-09-19 | 2022-05-03 | Maruwa Co., Ltd. | Aluminum nitride sintered body and method for producing same |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62128971A (en) * | 1985-11-28 | 1987-06-11 | 京セラ株式会社 | Aluminum nitride base sintered body and manufacture |
| JPH01100066A (en) * | 1987-10-10 | 1989-04-18 | Nippon Chemicon Corp | Production of aluminum nitride sintered compact |
| JPH01115856A (en) * | 1987-10-27 | 1989-05-09 | Hitachi Metals Ltd | Production of ceramic resistive element |
-
1987
- 1987-12-11 JP JP62313427A patent/JPH01153573A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62128971A (en) * | 1985-11-28 | 1987-06-11 | 京セラ株式会社 | Aluminum nitride base sintered body and manufacture |
| JPH01100066A (en) * | 1987-10-10 | 1989-04-18 | Nippon Chemicon Corp | Production of aluminum nitride sintered compact |
| JPH01115856A (en) * | 1987-10-27 | 1989-05-09 | Hitachi Metals Ltd | Production of ceramic resistive element |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01197364A (en) * | 1988-02-03 | 1989-08-09 | Sumitomo Electric Ind Ltd | Colored ceramic sintered body |
| JP2006251784A (en) * | 2005-02-09 | 2006-09-21 | Dainippon Printing Co Ltd | Multi-pattern bright sled and bright multi-pattern product using the same |
| WO2012123413A1 (en) * | 2011-03-11 | 2012-09-20 | Ceramtec Gmbh | Coil bodies having a ceramic core |
| CN103703522A (en) * | 2011-03-11 | 2014-04-02 | 陶瓷技术有限责任公司 | Coil bodies having a ceramic core |
| JP2018184316A (en) * | 2017-04-25 | 2018-11-22 | 株式会社Maruwa | Aluminum nitride sintered body and manufacturing method thereof |
| US11319254B2 (en) | 2018-09-19 | 2022-05-03 | Maruwa Co., Ltd. | Aluminum nitride sintered body and method for producing same |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP0574956B1 (en) | Metallized circuit substrate comprising nitride type ceramics | |
| JP3575068B2 (en) | Ceramic metallized substrate having smooth plating layer and method of manufacturing the same | |
| JPS6341165B2 (en) | ||
| JPH0574166B2 (en) | ||
| JPH01153573A (en) | Sintered aln material | |
| JPH05156303A (en) | Metallizing metal powder composition and production of metallized substrate using the composition | |
| JPH05238857A (en) | Method for metallizing substrate of aluminum nitride | |
| JPH05170552A (en) | Aluminum nitride substrate having metallized layer and metallization of the substrate | |
| JPH0349108A (en) | Copper conductor composition material | |
| JPH01107592A (en) | Electric circuit board | |
| JPH0723273B2 (en) | Method for metallizing aluminum nitride substrate | |
| JPH02101131A (en) | Metallizing composition on the surface of ceramics and metallizing method | |
| JPH01188483A (en) | Metallizing composition | |
| JPH07172961A (en) | Sintered aluminum nitride having metallized layer and its production | |
| JPH04285085A (en) | Ceramic substrate with thick film | |
| JPS6310226B2 (en) | ||
| JP2531716B2 (en) | Beryllia Ceramic Metallizing Paste | |
| JPH02217383A (en) | Sintered aluminum nitride and production thereof | |
| JPS63115393A (en) | High heat-conductivity circuit board | |
| JPH04280880A (en) | Metallizer and ceramic metallized substrate | |
| JPH01192757A (en) | Production of paste of ceramic superconductor | |
| JPH0312379A (en) | Metallizing paste | |
| JPH01788A (en) | Surface conductive ceramic substrate, method for manufacturing the same, and metallizing composition used therefor | |
| JPH01260713A (en) | Metallized paste composition for nitride-based ceramic substrate | |
| JPH01286938A (en) | Metallizing composition for substrate having low thermal expansion |