JPH01151035A - High density reproducing device and recording and reproducing device - Google Patents
High density reproducing device and recording and reproducing deviceInfo
- Publication number
- JPH01151035A JPH01151035A JP31153187A JP31153187A JPH01151035A JP H01151035 A JPH01151035 A JP H01151035A JP 31153187 A JP31153187 A JP 31153187A JP 31153187 A JP31153187 A JP 31153187A JP H01151035 A JPH01151035 A JP H01151035A
- Authority
- JP
- Japan
- Prior art keywords
- recording
- recording medium
- density
- conductive probe
- information
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000523 sample Substances 0.000 claims abstract description 41
- 238000010884 ion-beam technique Methods 0.000 claims description 32
- 230000003287 optical effect Effects 0.000 claims description 8
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 238000004574 scanning tunneling microscopy Methods 0.000 description 11
- 150000002500 ions Chemical class 0.000 description 9
- 238000000034 method Methods 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 230000005291 magnetic effect Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 238000013473 artificial intelligence Methods 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 230000005641 tunneling Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000005856 abnormality Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 210000004958 brain cell Anatomy 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003302 ferromagnetic material Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 1
- 229910001338 liquidmetal Inorganic materials 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000386 microscopy Methods 0.000 description 1
- 229910000510 noble metal Inorganic materials 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B9/00—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor
- G11B9/12—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor
- G11B9/14—Recording or reproducing using a method not covered by one of the main groups G11B3/00 - G11B7/00; Record carriers therefor using near-field interactions; Record carriers therefor using microscopic probe means, i.e. recording or reproducing by means directly associated with the tip of a microscopic electrical probe as used in Scanning Tunneling Microscopy [STM] or Atomic Force Microscopy [AFM] for inducing physical or electrical perturbations in a recording medium; Record carriers or media specially adapted for such transducing of information
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は新規な高密度再生装置および記録再生装置に関
し、さらに詳しくはイオンビームを利用して情報を記録
し、ＳＴＭ（走査トンネリング顕微鏡）技術を用いて情
報を再生するようにした高密度再生装置および記録再生
装置に関する。Detailed Description of the Invention (Industrial Application Field) The present invention relates to a novel high-density reproducing device and recording/reproducing device, and more specifically to a novel high-density reproducing device and a recording/reproducing device, and more specifically, it records information using an ion beam and uses STM (scanning tunneling microscopy) technology. The present invention relates to a high-density playback device and a recording/playback device that play back information using.
（従来の技術）
高密度記録としては従来から種々の方法が知られている
が、代表的な例として磁気記録および光記録がある。し
かし、これらの記録密度には０、５〜１μｍ程度の限界
がある。(Prior Art) Various methods have been known for high-density recording, and typical examples include magnetic recording and optical recording. However, these recording densities have a limit of about 0.5 to 1 μm.
磁気記録では、強磁性体として存在できる最小のドメイ
ン径の１０ｎｍが原理的に可能な記録密度と考えられて
いるが、記録再生に使用する磁気ヘッド等の装置側の制
約から記録の最短波長は１μｍ〜０．７μｍ程度となっ
ている。In magnetic recording, the smallest domain diameter that can exist in a ferromagnetic material, 10 nm, is thought to be the theoretically possible recording density, but due to constraints on the equipment such as the magnetic head used for recording and reproduction, the shortest wavelength for recording is limited. The thickness is about 1 μm to 0.7 μm.
また、光記録では、記録再生に使用する光のスポット径
によって記録密度が制限され、記録の最短波長は１μｍ
〜０．５μｍ程度となっている。In addition, in optical recording, the recording density is limited by the spot diameter of the light used for recording and reproduction, and the shortest recording wavelength is 1 μm.
It is approximately 0.5 μm.
記録密度が高い程、小さいスペースに多量の情報を記録
することができるので、各種の技術分野において、特に
最近ではＡＩ（人口知能）システム用メモリの分野にお
いて、より高密度の記録再生方法が求められている。The higher the recording density, the more information can be recorded in a small space, so there is a demand for higher density recording and reproducing methods in various technical fields, especially in the field of memory for AI (artificial intelligence) systems. It is being
磁気記録、光記録以上の高密度記録の方策としては、従
来、特開昭５９−２２１８４６号に記載されているよう
に電子ビームを用いる方法が行なわれていた。電子ビー
ムはビーム径を１〜２ｎｍ程度まで絞り込むことができ
るため記録ピット径を小さくできる。しかし電子は散乱
されやすく、近接したピット間のコントラストが低下す
る近接効果のためにピット間隔を小さくできず、記録の
最短波長は約０．０６μｍ程度が限度となる。Conventionally, as a method for recording at a higher density than magnetic recording or optical recording, a method using an electron beam has been used as described in Japanese Patent Laid-Open No. 59-221846. Since the beam diameter of the electron beam can be narrowed down to about 1 to 2 nm, the recording pit diameter can be reduced. However, electrons are easily scattered, and the pit spacing cannot be made small due to the proximity effect that reduces the contrast between adjacent pits, and the shortest recording wavelength is limited to about 0.06 μm.
ＡＩシステム用のメモリとしての用途を考えるならば、
その容量は人間の脳細胞の容量である約１００ギガバイ
｝（Ｇ Ｂｙｔｅ）程度は必要であり、この大容量を
直径１００ｍｍ程度の小面積で実現するには、少なくと
も記録最短波長は約０、０３μｍ程度必要となる。Considering its use as memory for AI systems,
Its capacity is approximately 100 gigabytes (GBytes), which is the capacity of a human brain cell, and in order to achieve this large capacity in a small area of approximately 100 mm in diameter, the shortest recording wavelength must be at least approximately 0.03 μm. degree is required.
一方、最近ＳＴＭ（走査トンネリング顕微鏡）技術とし
て知られる高解像度顕微鏡技術が急速に開発されている
。ＳＴＭは、薄いポテンシャル障壁（たとえば真空層な
ど）を突き抜けて一対の電極間に流れるトンネル電流を
利用して固体の表面状態を水平分解能的０，５ｎｍ、垂
直分解能的０、０１ｎｍという極めて高い分解能で分析
することができる。このため、固体表面科学その他にお
ける革新的分析手法となりつつある。On the other hand, high-resolution microscopy technology known as STM (scanning tunneling microscopy) technology has recently been rapidly developed. STM uses a tunnel current that passes through a thin potential barrier (such as a vacuum layer) and flows between a pair of electrodes to measure the surface state of a solid at an extremely high resolution of 0.5 nm horizontally and 0.01 nm vertically. can be analyzed. For this reason, it is becoming an innovative analytical method in solid surface science and other areas.
該ＳＴＭについての議論は、たとえば「走査型トンネル
顕微鏡による原子像と電子状態」 （日本物理学会誌第
４２巻第３号Ｐ２４７〜Ｐ２５５（１９８７））に見ら
れる。A discussion of the STM can be found, for example, in "Atomic images and electronic states using a scanning tunneling microscope" (Journal of the Physical Society of Japan, Vol. 42, No. 3, P247-P255 (1987)).
（発明が解決しようとする問題点）
上述したように、従来の磁気記録、光記録さらには電子
ビーム記録においては、記録スポット径や散乱による広
がり等によって記録密度が制限され、高密度記録が得ら
れないという問題があった。(Problems to be Solved by the Invention) As mentioned above, in conventional magnetic recording, optical recording, and even electron beam recording, the recording density is limited by the recording spot diameter and spread due to scattering, and it is difficult to achieve high-density recording. The problem was that I couldn't do it.
本発明の目的は、最近、技術開発されたＳＴＭの高分解
能（水平分解能、約０．５ｎｍ、垂直分解能、約０．０
１ｎｍ）に着目し、記録面密度が約５０Ｇビツト／ｃＩ
＃という極めて高密度の再生装置を提供することにある
。本発明の他の目的は、該高密度の再生装置を用いた高
密度記録再生装置を提供することにある。The purpose of the present invention is to achieve high resolution (horizontal resolution, approximately 0.5 nm, vertical resolution, approximately 0.0 nm) of STM, which has been developed recently.
1 nm), the recording surface density is approximately 50 Gbit/cI.
The purpose of the present invention is to provide an extremely high-density reproducing device. Another object of the present invention is to provide a high-density recording and reproducing device using the high-density reproducing device.
（問題点を解決するための手段）
本発明は、前記目的を達成するために、記録媒体表面か
ら予め選択された空間距離に設けられ、かつ該記録媒体
を半径方向に走査する導電性探針と、該導電性探針と前
記記録媒体間に電位を与える手段と、前記導電性探針と
前記記録媒体との間に生じるトンネル電流の変動を検知
し、デジタル再生情報を出力する手段とを具備し、前記
記録媒体表面に形成された突起あるいはくぼみ等の情報
に応じて変動するトンネル電流により、該情報の再生を
行うようにした点に特徴がある。(Means for Solving the Problems) In order to achieve the above object, the present invention provides a conductive probe that is provided at a preselected spatial distance from the surface of a recording medium and that scans the recording medium in the radial direction. , means for applying a potential between the conductive probe and the recording medium, and means for detecting fluctuations in tunnel current generated between the conductive probe and the recording medium and outputting digital reproduction information. The present invention is characterized in that the information is reproduced by a tunnel current that varies depending on the information such as protrusions or depressions formed on the surface of the recording medium.
本発明は、さらに、記録情報に応じて強度変調されたイ
オンビームを放出するイオン銃と、該イオンビームを集
束し、偏向する電磁光学系とからなる記録装置を設けた
点に特徴がある。The present invention is further characterized in that it includes a recording device comprising an ion gun that emits an ion beam whose intensity is modulated according to recorded information, and an electromagnetic optical system that focuses and deflects the ion beam.
（作用）
前記導電性探針は、イオンビームによって表面に凹部を
形成されたディスクの表面上に、約１０ｍの距離に設置
され、かつ該導電性探針とディスク表面間に、数ｍＶの
電位が印加される。また、該導電性探針は、ディスクの
回転に応じて、半径方向に動かされる。(Function) The conductive probe is installed at a distance of approximately 10 m on the surface of the disk in which a recess is formed by the ion beam, and a potential of several mV is applied between the conductive probe and the disk surface. is applied. Further, the conductive probe is moved in the radial direction according to the rotation of the disk.
この結果、該導電性探針は、該ディスクを走査すること
になり、該導電性探針とディスク表面間に応じたトンネ
ル電流が流れる。このトンネル電流を、０と１の２値の
デジタル量に変換することにより、情報の再生を高密度
で行うことができる。As a result, the conductive probe scans the disk, and a corresponding tunnel current flows between the conductive probe and the disk surface. By converting this tunnel current into a binary digital quantity of 0 and 1, information can be reproduced at high density.
また、イオンビームを記録情報に応じて強度変調し、こ
れを集束偏向して、ディスク表面上に照射すると、該デ
ィスク上に凹凸から形成された情報を高密度に記録する
ことができる。Further, by intensity-modulating the ion beam according to recorded information, focusing and deflecting the ion beam, and irradiating the ion beam onto the disk surface, it is possible to record information formed from irregularities on the disk with high density.
（実施例）
まず本発明の原理について説明する。最初に記録方法に
ついて説明する。記録は、記録信号に従って強度変調さ
れたイオンビームを回転するディスク表面に照射し、該
ディスク表面に形成されている導電膜をエツチングして
四部を形成することによって行なう。(Example) First, the principle of the present invention will be explained. First, the recording method will be explained. Recording is performed by irradiating the rotating disk surface with an ion beam whose intensity is modulated according to the recording signal, and etching the conductive film formed on the disk surface to form four parts.
トラッキング用グループに対応するイオンビーム強度を
Ｐ、記録信号に応じてピットを形成するイオンビーム強
度をＰ とし、Ｐ、、Ｐｐ間の強度変調を行なうことに
よりトラッキンググループ（深さｄ ）、ビット（深さ
ｄ ）をτ ｐｄ
＜ｄ として形成することができる。ｄ とτ
ｐ
τしてはトラッキングのためのトンネル電流
が流れる範囲であればよく、
ｄは
ｄ （ｎｍ） ＞ｄ （ｎｍ） ＋０．１ （ｎｍ）ｐ
τ
を満足する範囲で任意の値をとることができる。The ion beam intensity corresponding to the tracking group is P, and the ion beam intensity that forms pits according to the recording signal is P, and by performing intensity modulation between P, , Pp, the tracking group (depth d), bit ( depth d) as τ pd
<d. d and τ
p
τ may be within the range where the tunnel current for tracking flows, and d is d (nm) > d (nm) +0.1 (nm)p
It can take any value within the range that satisfies τ.
イオンは電子に比べて質量が大きく、導電膜内でほとん
ど散乱されないため、照射ビーム径に等しい四部が形成
でき、かつ近接して照射することも可能である。現在、
イオンビーム径は電磁光学系によって３０ｎｍ程度まで
絞ることが可能であり、ビット径を約３０ｎｍφ、トラ
ックピッチを約６０ｎｍとすると、記録面密度として約
５０Ｇビット／Ｃ−が得られる。Ions have a larger mass than electrons and are hardly scattered within the conductive film, so it is possible to form four parts with the same diameter as the irradiation beam, and it is also possible to irradiate them closely. the current,
The ion beam diameter can be narrowed down to about 30 nm by an electromagnetic optical system, and if the bit diameter is about 30 nmφ and the track pitch is about 60 nm, a recording surface density of about 50 Gbit/C- can be obtained.
ここで、イオンビームによって導電膜を直接エツチング
する場合、エツチング速度Ｒと、ビーム電流■およびビ
ーム径Ｓの間には、
Ｒべ ＩＳ２
の関係が成立する。すなわち、ビーム径を細く絞るとエ
ツチング速度は減少するため、短時間で工ツチングする
ためには、大電流、すなわちビームエネルギ約１００ｋ
ｅｙ、照射量約１０１フイオン／ｃｉが必要である。Here, when a conductive film is directly etched with an ion beam, the following relationship RbeIS2 holds between the etching rate R, the beam current (2), and the beam diameter S. In other words, if the beam diameter is narrowed, the etching speed will decrease, so in order to process in a short time, a large current, that is, a beam energy of approximately 100k, is required.
ey, a dose of approximately 101 ions/ci is required.
したがって、イオンビーム源としては、長時間、安定に
かつ大照射量の得られる液体金属イオン源とし、イオン
の元素としてはＲ，ｂ、ＣｓあるいはＧａなどが適して
いる。Therefore, as the ion beam source, a liquid metal ion source that can stably provide a large irradiation amount over a long period of time is used, and R, b, Cs, Ga, or the like is suitable as the ion element.
例えば、イオンビームのイオン元素としてＧａ＋、イオ
ンエネルギー約１００ｋｅＶ、イオン照射量約１０１フ
イオン／ ｃｊ、ビーム径約３０ｎｍとするとエツチン
グ速度として、約１０ｎｍ／ｓｅｃが得られる。For example, when the ion element of the ion beam is Ga+, the ion energy is about 100 keV, the ion irradiation amount is about 101 ions/cj, and the beam diameter is about 30 nm, an etching rate of about 10 nm/sec can be obtained.
次に、再生方法について説明する。再生には、ＳＴＭ（
走査トンネリング顕微鏡）技術を用いる。Next, a reproduction method will be explained. For playback, STM (
using scanning tunneling microscopy (scanning tunneling microscopy) technology.
導電性探針をイオンビームによって表面に四部を形成さ
れたディスク上に約１ｎｍの距離に近付け、該導電性探
針とディスク表面の導電膜間に数ｍＶ〜１ｖ程度の電圧
を印加する。ディスクを回転させることにより導電性探
針はディスク表面上を走査し、導電性探針とディスク表
面間の距離に応じたトンネル電流が流れる。導電性探針
とディスク表面、トラッキンググループ、ピット部間の
距離変化に応じてトンネル電流は変動するから、この変
動量を閉ループ系で感知することにより情報の再生がな
される。A conductive probe is brought close to a distance of about 1 nm from a disk having four parts formed on its surface by an ion beam, and a voltage of about several mV to 1 V is applied between the conductive probe and the conductive film on the disk surface. By rotating the disk, the conductive probe scans over the disk surface, and a tunnel current flows depending on the distance between the conductive probe and the disk surface. Since the tunneling current fluctuates in response to changes in the distance between the conductive probe and the disk surface, tracking group, and pit, information is reproduced by sensing this amount of fluctuation in a closed-loop system.
なお、ＳＴＭ技術においては、表面の凸凹を測定するの
に大きく分けて次の２つのモードがある。In addition, in the STM technology, there are two main modes for measuring surface irregularities:
（１）定電流モードと呼ばれるもので、変動するトンネ
ル電流が一定になるように、探針と試料表面の距離を圧
電駆動装置を用いて制御するもの、
（２）可変電流モードと呼ばれるもので、探針と試料表
面間にあらかじめ選択された距離空間にセットされ、変
動するトンネル電流を距離変化に変換するもの、
メモリとしての用途を考えた場合、高転送レートを得る
ためにはディスク表面を高速走査する必要があるため、
上記の（２）の可変電流モードを用いるのがよい。(1) Constant current mode, in which the distance between the probe and the sample surface is controlled using a piezoelectric drive device so that the fluctuating tunnel current remains constant; (2) Variable current mode, in which the distance between the probe and the sample surface is controlled using a piezoelectric drive device. , which is set at a preselected distance space between the tip and the sample surface, and converts the fluctuating tunnel current into a change in distance.When considering the use as a memory, in order to obtain a high transfer rate, it is necessary to Because it is necessary to scan at high speed,
It is preferable to use the variable current mode (2) above.
次に、本発明の一実施例を図面を参照して詳細に説明す
る。第２図は本発明の一実施例の記録装置の概念的構成
図である。Next, one embodiment of the present invention will be described in detail with reference to the drawings. FIG. 2 is a conceptual block diagram of a recording apparatus according to an embodiment of the present invention.
図において、１はガラス、プラスチックあるいはＳｉ等
表面が平坦かつ滑らかな基板である。２は導電膜であり
、その材料としてスパッタ率の大きいＡｕやＡｇ等の貴
金属が適している。該材料を用いると、スパッタリング
により均一性の良い導電膜か形成される。導電膜２の厚
さは特に厳密でなく、表面が滑らかであればよい。３は
イオンビーム発生装置であり（Ｆ Ｉ ８機器）、極細
イオンビームを５０〜１００ｋｅＶのエネルギで発生さ
せる。４はイオンビーム収束装置であり、イオンビーム
の直径を３０ｎｍ程度に集束する。５はビーム変調器で
あり、記録信号に応じてイオンビームの強度を制御する
。６はディスク回転用モータであり、７は真空室、８は
真空ポンプである。In the figure, 1 is a substrate with a flat and smooth surface, such as glass, plastic, or Si. Reference numeral 2 represents a conductive film, and its material is preferably a noble metal such as Au or Ag, which has a high sputtering rate. When this material is used, a conductive film with good uniformity can be formed by sputtering. The thickness of the conductive film 2 is not particularly critical, as long as the surface is smooth. 3 is an ion beam generator (F I 8 equipment), which generates an extremely fine ion beam with an energy of 50 to 100 keV. 4 is an ion beam focusing device, which focuses the ion beam to a diameter of about 30 nm. 5 is a beam modulator, which controls the intensity of the ion beam according to the recording signal. 6 is a disk rotation motor, 7 is a vacuum chamber, and 8 is a vacuum pump.
記録にあたっては、まず真空ポンプ８により真空室７内
を約ｌＸ１０’Ｐａ程度に排気する。基板１および導電
膜２よりなるディスクは回転用モータ６によって回転さ
れ、記録信号に応じて変調器５によって強度変調された
Ｇａ イオンビームが導膜膜２上に照射される。この
時、ビーム径は集束装置４によって約３０ｎｍ程度に集
束される。For recording, first, the inside of the vacuum chamber 7 is evacuated to about 1×10'Pa using the vacuum pump 8. A disk consisting of a substrate 1 and a conductive film 2 is rotated by a rotation motor 6, and the conductive film 2 is irradiated with a Ga 2 ion beam whose intensity is modulated by a modulator 5 in accordance with a recording signal. At this time, the beam diameter is focused by the focusing device 4 to about 30 nm.
イオンビームは導電膜２をエツチングし、巾約３０ｎｍ
、深さ約１ｎｍ、ピッチ約［５Ｑｎｍのトラッキンググ
ループおよび前記トラッキンググループ内に、巾約３０
ｎｍ、深さ約１ｎｍのピットを形成する。The ion beam etches the conductive film 2 to a width of about 30 nm.
, a tracking group with a depth of about 1 nm, a pitch of about [5Q nm, and a width of about 30 nm in the tracking group.
pits with a depth of approximately 1 nm.
第３図（ａ）は導電膜２表面上に形成されたトラッキン
ググループおよび四部（ビットに相当する）の一部拡大
平面図であり、同図（ｂ）および同図（ｅ）は同図（ａ
）におけるｂ−ｂ’線位置およびＣ−Ｃ’線位置におけ
る縦断側面図である。FIG. 3(a) is a partially enlarged plan view of the tracking group and four parts (corresponding to bits) formed on the surface of the conductive film 2, and FIG. 3(b) and FIG. a
) is a vertical cross-sectional side view taken along line bb' and line C-C'.
トラッキンググループ９部ではイオンビーム強度を弱く
、ピット部１０ではイオンビーム強度を強くすることに
よりトラッキンググループ内にピットを形成することが
できる。再生時にはこのトラッキンググループ９に沿っ
て再生用探針が走査し、正確に情報を読み取ることがで
きる。By lowering the ion beam intensity in the tracking group 9 portion and increasing the ion beam intensity in the pit portion 10, pits can be formed within the tracking group. During reproduction, the reproduction probe scans along this tracking group 9, allowing accurate reading of information.
前記第３図（ｂ）、（ｅ）において、ｆｌ：Ｆ２−約３
０ｎｍ、１３−約５ＱｎｍＳｈｌ−約１ｎｍ。In FIGS. 3(b) and (e), fl:F2-about 3
0 nm, 13 - about 5 Qnm Shl - about 1 nm.
ｈ２−約２ｎｍである。h2 - approximately 2 nm.
第１図は本発明の一実施例の再生装置の概念的構成図で
ある。図において、１１は導電性探針、１２は圧電駆動
装置、１３は電流電圧変換器、１４は増幅器、１５は対
数変換器、１６は比較器、１７は電流センサを示す。FIG. 1 is a conceptual diagram of a reproducing apparatus according to an embodiment of the present invention. In the figure, 11 is a conductive probe, 12 is a piezoelectric drive device, 13 is a current-voltage converter, 14 is an amplifier, 15 is a logarithmic converter, 16 is a comparator, and 17 is a current sensor.
前記導電性探針１１はｐｔ、ｗ等の金属から構成されて
いる。その先端は機械的に研摩され、先端半径は約１１
００ｎ程度に構成されている。The conductive probe 11 is made of metal such as PT and W. Its tip is mechanically polished and the tip radius is approximately 11
00n.
なお、該先端半径Ｒと水平分解能δとの間にはδキＲ１
１２の関係があるので、ピット径が約３０ｎｍのピット
を読取るためには、その先端半径Ｒを、Ｒ＜９００ｎｍ
とすればよい。Note that there is a distance δkiR1 between the tip radius R and the horizontal resolution δ.
Since there is a relationship of 12, in order to read a pit with a pit diameter of approximately 30 nm, the tip radius R must be
And it is sufficient.
また、前記圧電駆動装置１２は、チタン酸ジルコン酸鉛
系セラミックスから構成されており、ディスクの半径方
向および垂直方向の２次元に変位可能に構成されている
。The piezoelectric drive device 12 is made of lead zirconate titanate ceramics, and is configured to be able to be displaced two-dimensionally in the radial direction and the vertical direction of the disk.
次に、該再生装置の動作を説明する。Next, the operation of the playback device will be explained.
前記導電性探針１１は、前記圧電駆動装置１２を用いて
、情報が凸凹により記録されたディスク１の導電膜２上
に、約１ｎｍの距離をおいて配置されている。そして、
該導電性探針１１と導電膜２間に、約ＩＶ程度の直流電
圧が印加されている。The conductive probe 11 is placed at a distance of about 1 nm on the conductive film 2 of the disk 1 on which information is recorded in a concave and convex manner using the piezoelectric drive device 12. and,
A DC voltage of about IV is applied between the conductive probe 11 and the conductive film 2.
ディスク１をモータ６により回転させることにより、導
電性探針１１はディスク表面上を走査し、導電性探針１
１と導電膜２に形成された凸凹間の距離に応じたトンネ
ル電流が流れる。記録された情報（表面の凸凹）によっ
て変動するトンネル電流は、電流センサ１７を介して、
電流電圧変換器１３により電圧の変動に変換される。こ
こで、トンネル電流は導電性探針１１と導電膜２の凸凹
間の距離に対して指数関数的に変動するため、増幅器１
４の後には対数変換器１５によって変動をリニアとし、
標準電源電圧との比較を比較器１６によって行ない、凸
凹に応じたデジタル情報を再生する。By rotating the disk 1 by the motor 6, the conductive probe 11 scans the surface of the disk, and the conductive probe 1
A tunnel current flows in accordance with the distance between the unevenness formed on the conductive film 1 and the conductive film 2. The tunnel current, which varies depending on the recorded information (surface irregularities), is transmitted via the current sensor 17 to
The current-voltage converter 13 converts the voltage into voltage fluctuations. Here, since the tunneling current varies exponentially with the distance between the conductive probe 11 and the unevenness of the conductive film 2, the amplifier 1
After 4, the variation is made linear by a logarithmic converter 15,
Comparison with the standard power supply voltage is performed by a comparator 16, and digital information corresponding to the unevenness is reproduced.
また、高さ制御信号ａにより、導電性探針１１と導電膜
２との空間距離を設定し、導電性探針１１と導電膜２の
空間距離の許容範囲内への再設定およびトンネル電流の
異常時の際に導電性探針１１を退避させるために、増幅
器１４後の信号すを圧電駆動装置１２ヘフイードバツク
させる。In addition, the spatial distance between the conductive probe 11 and the conductive film 2 is set using the height control signal a, and the spatial distance between the conductive probe 11 and the conductive film 2 is reset to within the allowable range and the tunnel current is In order to evacuate the conductive probe 11 in the event of an abnormality, the signal after the amplifier 14 is fed back to the piezoelectric drive device 12.
なお、本実施例においてはイオンビームにより導電膜を
直接エツチングして記録する方法を示したが、基板上に
ＰＭＭＡ等のレジストを塗布し、レジスト露光により記
録を行なうこともできる。Although this embodiment shows a method of recording by directly etching the conductive film with an ion beam, it is also possible to apply a resist such as PMMA on the substrate and perform recording by exposing the resist.
本実施例によれば、ピット径を約３０ｎｍ、トラックピ
ッチを約６０ｎｍ、ディスク径を約１０ｃｍとした場合
、約１００Ｇバイトの記録容量が得られる。According to this embodiment, when the pit diameter is about 30 nm, the track pitch is about 60 nm, and the disk diameter is about 10 cm, a recording capacity of about 100 Gbytes can be obtained.
本実施例では外乱を抑止するために、室７を真空排気し
ているが、トンネル電流は大気中でも生じることは明白
であり、必ずしも真空排気は必要でない。In this embodiment, the chamber 7 is evacuated in order to suppress disturbances, but it is clear that tunnel current occurs even in the atmosphere, so evacuating is not necessarily necessary.
（発明の効果）
本発明によれば、記録面密度を現在の光ディスクの約１
０３倍に向上でき、高密度大容量の再生装置および記録
再生装置を提供することができる。(Effects of the Invention) According to the present invention, the recording surface density can be reduced to about 1 that of current optical discs.
It is possible to provide a high-density, large-capacity reproducing device and recording/reproducing device.
第１図は本発明の一実施例の再生装置の概念的構成図、
第２図は本発明の実施例の記録装置の概念的構成図、第
３図はディスク表面の平面図および断面図を示す。
１・・・基板、２・・・導電膜、３・・・イオンビーム
発生装置、４・・・イオンビーム収束装置、５・・・ビ
ーム変調器、６・・・ディスク回転用モータ、７・・・
真空室、８・・・真空ポンプ、１１・・・導電性探針、
１２・・・圧電駆動装置、１３・・・電流電圧変換器、
１４・・・増幅器、１５・・・対数変換器、１６・・・
比較器、１７・・・電流センサFIG. 1 is a conceptual configuration diagram of a playback device according to an embodiment of the present invention;
FIG. 2 is a conceptual block diagram of a recording apparatus according to an embodiment of the present invention, and FIG. 3 is a plan view and a sectional view of a disk surface. DESCRIPTION OF SYMBOLS 1... Substrate, 2... Conductive film, 3... Ion beam generator, 4... Ion beam focusing device, 5... Beam modulator, 6... Disk rotation motor, 7...・・・
Vacuum chamber, 8... Vacuum pump, 11... Conductive probe,
12... Piezoelectric drive device, 13... Current voltage converter,
14... Amplifier, 15... Logarithmic converter, 16...
Comparator, 17... current sensor
Claims (7)
報の再生を行なう高密度再生装置において、前記記録媒
体表面からあらかじめ選択された空間距離に設けられ、
かつ該記録媒体を半径方向に走査する導電性探針と、該
導電性探針と前記記録媒体間に電位を与える手段と、前
記導電性探針と前記記録媒体との間に生じるトンネル電
流の変動を検知し、デジタル再生情報を出力する手段と
を具備し、前記記録媒体表面に形成された前記突起ある
いはくぼみに応じて変動するトンネル電流により情報の
再生を行なうようにしたことを特徴とする高密度再生装
置。(1) In a high-density reproduction device that reads protrusions or depressions on a recording medium to reproduce information, the device is installed at a preselected spatial distance from the surface of the recording medium,
and a conductive probe that scans the recording medium in a radial direction, a means for applying a potential between the conductive probe and the recording medium, and a means for applying a potential between the conductive probe and the recording medium, and a means for controlling a tunnel current generated between the conductive probe and the recording medium. It is characterized by comprising means for detecting fluctuations and outputting digital reproduction information, and reproduction of information is performed by means of a tunnel current that varies according to the protrusions or depressions formed on the surface of the recording medium. High-density playback equipment.
Ｓｉからなる元素の群の中から選ばれた元素であること
を特徴とする前記特許請求の範囲第１項記載の高密度再
生装置。(2) The high-density playback device according to claim 1, wherein the surface of the recording medium is made of an element selected from the group of elements consisting of Au, Ag, Cu, and Si. .
徴とする前記特許請求の範囲第１項または第２項記載の
高密度再生装置。(3) The high-density playback device according to claim 1 or 2, wherein the recording medium has a disk shape.
を行い、該記録媒体上の突起あるいはくぼみを読取って
情報の再生を行う高密度記録再生装置において、 記録情報に応じて強度変調されたイオンビームを放出す
るイオン銃と、前記イオンビームを集束し偏向する電磁
光学系とからなる記録装置と、前記記録媒体表面からあ
らかじめ選択された空間距離に設けられ、かつ該記録媒
体を半径方向に走査する導電性探針と、該導電性探針と
前記記録媒体間に電位を与える手段と、前記導電性探針
と前記記録媒体との間に生じるトンネル電流の変動を検
知し、デジタル再生情報を出力する手段とからなる再生
装置とを具備し、 前記イオンビームを前記記録媒体表面に照射して高密度
記録を行い、該記録媒体表面に形成された情報の再生を
行うようにしたことを特徴とする高密度記録再生装置。(4) In a high-density recording/reproducing device that performs recording by forming protrusions or depressions on a recording medium and reproduces information by reading the protrusions or depressions on the recording medium, the intensity is modulated according to the recorded information. a recording device comprising an ion gun that emits an ion beam; an electromagnetic optical system that focuses and deflects the ion beam; A scanning conductive probe, a means for applying a potential between the conductive probe and the recording medium, and a means for detecting fluctuations in tunnel current generated between the conductive probe and the recording medium, and detecting digital reproduction information. and a reproducing device comprising a means for outputting the ion beam, the ion beam is irradiated onto the surface of the recording medium to perform high-density recording, and the information formed on the surface of the recording medium is reproduced. A high-density recording and reproducing device with special features.
、Ｒｂ、Ｃｓ、Ｇａからなる元素の群の中から選ばれた
元素であることを特徴とする前記特許請求の範囲第４項
記載の高密度記録再生装置。(5) The high density according to claim 4, wherein the element of the ion beam used in the recording is an element selected from the group of elements consisting of Rb, Cs, and Ga. Recording and playback device.
Ｓｉからなる元素の群の中から選ばれた元素であること
を特徴とする前記特許請求の範囲第４または５項記載の
高密度記録再生装置。(6) The high density according to claim 4 or 5, wherein the surface of the recording medium is made of an element selected from the group of elements consisting of Au, Ag, Cu, and Si. Recording and playback device.
徴とする前記特許請求の範囲第４ないし６項記載の高密
度記録再生装置。(7) The high-density recording and reproducing apparatus according to any one of claims 4 to 6, wherein the recording medium has a disk shape.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31153187A JPH01151035A (en) | 1987-12-09 | 1987-12-09 | High density reproducing device and recording and reproducing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31153187A JPH01151035A (en) | 1987-12-09 | 1987-12-09 | High density reproducing device and recording and reproducing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01151035A true JPH01151035A (en) | 1989-06-13 |
Family
ID=18018358
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP31153187A Pending JPH01151035A (en) | 1987-12-09 | 1987-12-09 | High density reproducing device and recording and reproducing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01151035A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0271439A (en) * | 1988-09-07 | 1990-03-12 | Canon Inc | Recording and reproducing device |
| JPH02282945A (en) * | 1989-04-25 | 1990-11-20 | Canon Inc | Recording and reproducing device |
| JPH03278341A (en) * | 1990-03-28 | 1991-12-10 | Canon Inc | Fine probe electrode employed recording/reproducing device |
| US5199021A (en) * | 1990-04-18 | 1993-03-30 | Canon Kabushiki Kaisha | Method of access to recording medium, and apparatus and method for processing information |
| US5255259A (en) * | 1990-04-18 | 1993-10-19 | Canon Kabushiki Kaisha | Method of access to recording medium, and apparatus and method for processing information |
| US5446720A (en) * | 1990-03-09 | 1995-08-29 | Canon Kabushiki Kaisha | Information recording method and apparatus recording two or more changes in topographical and electrical states |
| US5581364A (en) * | 1991-03-06 | 1996-12-03 | Canon Kabushiki Kaisha | Method for recording and/or reproducing image signals and an apparatus therefor utilizing two dimensional scanning of a recording medium by a probe |
| CN105940228A (en) * | 2014-01-31 | 2016-09-14 | 株式会社海莱客思 | Connection mechanism |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6180536A (en) * | 1984-09-14 | 1986-04-24 | ゼロツクス コーポレーシヨン | Apparatus and method for recording and reading atom-size density information |
| JPS6396756A (en) * | 1986-10-13 | 1988-04-27 | Nippon Telegr & Teleph Corp <Ntt> | Storage device |
| JPH01116940A (en) * | 1987-10-29 | 1989-05-09 | Hitachi Ltd | Method for recording and reproducing information |
-
1987
- 1987-12-09 JP JP31153187A patent/JPH01151035A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6180536A (en) * | 1984-09-14 | 1986-04-24 | ゼロツクス コーポレーシヨン | Apparatus and method for recording and reading atom-size density information |
| JPS6396756A (en) * | 1986-10-13 | 1988-04-27 | Nippon Telegr & Teleph Corp <Ntt> | Storage device |
| JPH01116940A (en) * | 1987-10-29 | 1989-05-09 | Hitachi Ltd | Method for recording and reproducing information |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0271439A (en) * | 1988-09-07 | 1990-03-12 | Canon Inc | Recording and reproducing device |
| JPH02282945A (en) * | 1989-04-25 | 1990-11-20 | Canon Inc | Recording and reproducing device |
| US5446720A (en) * | 1990-03-09 | 1995-08-29 | Canon Kabushiki Kaisha | Information recording method and apparatus recording two or more changes in topographical and electrical states |
| JPH03278341A (en) * | 1990-03-28 | 1991-12-10 | Canon Inc | Fine probe electrode employed recording/reproducing device |
| US5199021A (en) * | 1990-04-18 | 1993-03-30 | Canon Kabushiki Kaisha | Method of access to recording medium, and apparatus and method for processing information |
| US5255259A (en) * | 1990-04-18 | 1993-10-19 | Canon Kabushiki Kaisha | Method of access to recording medium, and apparatus and method for processing information |
| US5581364A (en) * | 1991-03-06 | 1996-12-03 | Canon Kabushiki Kaisha | Method for recording and/or reproducing image signals and an apparatus therefor utilizing two dimensional scanning of a recording medium by a probe |
| CN105940228A (en) * | 2014-01-31 | 2016-09-14 | 株式会社海莱客思 | Connection mechanism |
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