JPH01122594A - Thin film type electroluminescence element - Google Patents
Thin film type electroluminescence elementInfo
- Publication number
- JPH01122594A JPH01122594A JP62279033A JP27903387A JPH01122594A JP H01122594 A JPH01122594 A JP H01122594A JP 62279033 A JP62279033 A JP 62279033A JP 27903387 A JP27903387 A JP 27903387A JP H01122594 A JPH01122594 A JP H01122594A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type semiconductor
- emitting layer
- light
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010409 thin film Substances 0.000 title claims description 6
- 238000005401 electroluminescence Methods 0.000 title description 2
- 239000004065 semiconductor Substances 0.000 claims abstract description 33
- 230000005684 electric field Effects 0.000 claims abstract description 16
- 239000000758 substrate Substances 0.000 abstract description 13
- 239000011521 glass Substances 0.000 abstract description 9
- 230000000694 effects Effects 0.000 abstract description 6
- 238000009413 insulation Methods 0.000 abstract description 6
- 229910052751 metal Inorganic materials 0.000 abstract description 4
- 239000002184 metal Substances 0.000 abstract description 4
- 238000005036 potential barrier Methods 0.000 abstract description 4
- 230000002195 synergetic effect Effects 0.000 abstract description 2
- 238000002513 implantation Methods 0.000 abstract 1
- 239000010408 film Substances 0.000 description 22
- OMZSGWSJDCOLKM-UHFFFAOYSA-N copper(II) sulfide Chemical group [S-2].[Cu+2] OMZSGWSJDCOLKM-UHFFFAOYSA-N 0.000 description 17
- 238000004544 sputter deposition Methods 0.000 description 14
- 229910052984 zinc sulfide Inorganic materials 0.000 description 13
- 238000000034 method Methods 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 8
- 229910001936 tantalum oxide Inorganic materials 0.000 description 8
- 239000011572 manganese Substances 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 239000000203 mixture Substances 0.000 description 5
- 239000012300 argon atmosphere Substances 0.000 description 3
- -1 halogen anion Chemical class 0.000 description 3
- 238000004020 luminiscence type Methods 0.000 description 3
- 238000001451 molecular beam epitaxy Methods 0.000 description 3
- 229920006395 saturated elastomer Polymers 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910021591 Copper(I) chloride Inorganic materials 0.000 description 2
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- 229910003781 PbTiO3 Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- AQCDIIAORKRFCD-UHFFFAOYSA-N cadmium selenide Chemical compound [Cd]=[Se] AQCDIIAORKRFCD-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- OXBLHERUFWYNTN-UHFFFAOYSA-M copper(I) chloride Chemical compound [Cu]Cl OXBLHERUFWYNTN-UHFFFAOYSA-M 0.000 description 2
- 229940045803 cuprous chloride Drugs 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- NDVLTYZPCACLMA-UHFFFAOYSA-N silver oxide Chemical compound [O-2].[Ag+].[Ag+] NDVLTYZPCACLMA-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910020187 CeF3 Inorganic materials 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910004299 TbF3 Inorganic materials 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- 239000005083 Zinc sulfide Substances 0.000 description 1
- 229910008253 Zr2O3 Inorganic materials 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 229910000416 bismuth oxide Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 229910000428 cobalt oxide Inorganic materials 0.000 description 1
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- 229910000365 copper sulfate Inorganic materials 0.000 description 1
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- LSXDOTMGLUJQCM-UHFFFAOYSA-M copper(i) iodide Chemical compound I[Cu] LSXDOTMGLUJQCM-UHFFFAOYSA-M 0.000 description 1
- OPQARKPSCNTWTJ-UHFFFAOYSA-L copper(ii) acetate Chemical compound [Cu+2].CC([O-])=O.CC([O-])=O OPQARKPSCNTWTJ-UHFFFAOYSA-L 0.000 description 1
- QYCVHILLJSYYBD-UHFFFAOYSA-L copper;oxalate Chemical compound [Cu+2].[O-]C(=O)C([O-])=O QYCVHILLJSYYBD-UHFFFAOYSA-L 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 1
- 230000005518 electrochemistry Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- GNVXPFBEZCSHQZ-UHFFFAOYSA-N iron(2+);sulfide Chemical compound [S-2].[Fe+2] GNVXPFBEZCSHQZ-UHFFFAOYSA-N 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- XCAUINMIESBTBL-UHFFFAOYSA-N lead(ii) sulfide Chemical compound [Pb]=S XCAUINMIESBTBL-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- MMKQUGHLEMYQSG-UHFFFAOYSA-N oxygen(2-);praseodymium(3+) Chemical compound [O-2].[O-2].[O-2].[Pr+3].[Pr+3] MMKQUGHLEMYQSG-UHFFFAOYSA-N 0.000 description 1
- 229910003447 praseodymium oxide Inorganic materials 0.000 description 1
- GGYFMLJDMAMTAB-UHFFFAOYSA-N selanylidenelead Chemical compound [Pb]=[Se] GGYFMLJDMAMTAB-UHFFFAOYSA-N 0.000 description 1
- 150000003346 selenoethers Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910001923 silver oxide Inorganic materials 0.000 description 1
- FSJWWSXPIWGYKC-UHFFFAOYSA-M silver;silver;sulfanide Chemical compound [SH-].[Ag].[Ag+] FSJWWSXPIWGYKC-UHFFFAOYSA-M 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 150000004763 sulfides Chemical class 0.000 description 1
- DDJAGKOCVFYQOV-UHFFFAOYSA-N tellanylideneantimony Chemical compound [Te]=[Sb] DDJAGKOCVFYQOV-UHFFFAOYSA-N 0.000 description 1
- AFNRRBXCCXDRPS-UHFFFAOYSA-N tin(ii) sulfide Chemical compound [Sn]=S AFNRRBXCCXDRPS-UHFFFAOYSA-N 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- LKNRQYTYDPPUOX-UHFFFAOYSA-K trifluoroterbium Chemical compound F[Tb](F)F LKNRQYTYDPPUOX-UHFFFAOYSA-K 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Abstract
Description
【発明の詳細な説明】
［産業上の利用分野］
本発明は、発光層に交流電界を印加することにより発光
を示す薄膜エレクトロルミネッセンス素子（以下、ＥＬ
と略記する）であって、特に低電圧でも駆動するＥＬに
関するものである。Detailed Description of the Invention [Industrial Application Field] The present invention relates to a thin film electroluminescent device (hereinafter referred to as EL) that emits light by applying an alternating current electric field to a light emitting layer.
(abbreviated as ), and particularly relates to EL that can be driven even at low voltages.
［従来の技術］
ＺｎＳやＺｎ５ｅ等の化合物半導体にＭｎ等の発光中心
を添加したものに高電界を印加することで発光するエレ
クトロルミネッセンスの現象は占°くから知られる。近
年、２重絶縁層型ＥＬの開発［ニス・アイ・デイ、７４
ダイジェスト・オブ・テクニカル・ペーパーズ（Ｓ
ＩＤ７４ Ｄｉｇｅｓｔ ｏｌ’ Ｔｅｃｈｊｎｉｃａ
ｌ Ｐａｐｅｒｓ） 、 ８４頁、１９７４年；ジ
ャーナル・オプ・エレクトロケミカルやソサエティ（Ｊ
ｏｕｒｎａｌ ｏｆ ＥＩｅｃＬｒｏｃｈｅｍｉｃａｌ
Ｓｏｃｉｅｔｙ） 、 １１４巻、ＩＯ！頁、 １
．９８７年コにより、輝度および寿命が飛躍的に向上し
、薄膜ＥＬは薄型デイスプレィに応用されるようになり
、市販されるまでになった。第７図は、２重絶縁型ＥＬ
の断面構造を示す。[Prior Art] The phenomenon of electroluminescence, in which light is emitted by applying a high electric field to a compound semiconductor such as ZnS or Zn5e doped with a luminescent center such as Mn, has been known for some time. In recent years, the development of double insulating layer type EL [Nis.I.D., 74
Digest of Technical Papers (S
ID74 Digest ol' Techjnica
Journal of Electrochemistry and Society (J Papers), 84 pages, 1974;
our own of EIecLrochemical
Society), Volume 114, IO! Page, 1
．． In 1987, brightness and lifespan were dramatically improved, and thin film EL came to be applied to thin displays and became commercially available. Figure 7 shows a double insulation type EL
The cross-sectional structure of is shown.
ガラス等の基板１１の上にインジウム・スズ酸化物（以
下ＩＴＯと略記する）等の透明電極１２、第１絶縁層１
３、発光層１４、第２絶縁層１５、背面電極１Ｇが順次
積層されている。発光層１４はＺｎ５ＳＺｎＳｅＳＣａ
Ｓ、ＳｒＳ等の半導体に適当な発光中心が添加されてい
る。発光中心としてＭｎを添加した場合には黄橙色、Ｔ
ｂを添加した場合には緑色の発光を得ることかできる。A transparent electrode 12 made of indium tin oxide (hereinafter abbreviated as ITO) or the like and a first insulating layer 1 are formed on a substrate 11 made of glass or the like.
3. The light emitting layer 14, the second insulating layer 15, and the back electrode 1G are laminated in this order. The light emitting layer 14 is Zn5SZnSeSCa
Suitable luminescent centers are added to semiconductors such as S and SrS. When Mn is added as a luminescent center, yellow-orange color, T
When b is added, green light emission can be obtained.
発光は、電界により加速された電子が発光中心を衝突励
起することで生ずると説明される。It is explained that light emission occurs when electrons accelerated by an electric field collide and excite a luminescent center.
発光層を両側からはさんだ絶縁層１３．１５は高電圧印
加時に発光層に局所的に過大電流が流れ絶縁破壊゛に至
るのを防止するのと、湿気による素子劣化を防止する二
つの役割を有する。絶縁層としてはＹ２Ｏ３、ＳｉＯ２
、Ｔａ２０５等の絶縁体薄膜が用いられる。The insulating layers 13 and 15, which sandwich the light emitting layer from both sides, have two roles: to prevent excessive current from flowing locally in the light emitting layer and resulting in dielectric breakdown when high voltage is applied, and to prevent element deterioration due to moisture. have Y2O3, SiO2 as the insulating layer
, Ta205, or the like is used.
このような構造を有する従来のＥＬは十分な輝度を得る
には高電圧で駆動しなければならない。そのため、この
ＥＬを用いた薄型デイスプレィを駆動するのには、特別
に設計された高耐圧のＩＣを用いる必要があり、装置が
高価になる欠点を有していた。そこで、通常のＩＣが使
用できる、低電圧で駆動するＥＬの開発が望まれている
。A conventional EL having such a structure must be driven at a high voltage to obtain sufficient brightness. Therefore, in order to drive a thin display using this EL, it is necessary to use a specially designed high-voltage IC, which has the drawback of making the device expensive. Therefore, it is desired to develop an EL that can be driven at a low voltage and that can be used with ordinary ICs.
ＥＬを低電圧で駆動するために、絶縁層にＰｂＴｉＯ３
等の高誘電率物質を用いる方法や発光層に電子供給層で
あるＮ−型半導体を接合する方法（特開昭５９−２１４
１９９）か試みられている。しかし、前者は高絶縁性の
ＰｂＴｉ０：＋膜を作成するのには、基板を６００°Ｃ
以上の高温に加熱する必要があり、しかも、高温加熱に
より発光層が悪影響を受ける欠点も有している。さらに
、このようにして得られた素子の駆動電圧は上記目的の
ためには、また高く不十分である。In order to drive EL at low voltage, PbTiO3 is used in the insulating layer.
A method of using a high dielectric constant material such as a method of bonding an N-type semiconductor, which is an electron supply layer, to a light emitting layer (Japanese Patent Laid-Open No. 59-214
199) has been attempted. However, the former requires heating the substrate to 600°C to create a highly insulating PbTi0:+ film.
It is necessary to heat to a higher temperature than that, and the light emitting layer also has the disadvantage that the high temperature heating adversely affects the light emitting layer. Furthermore, the driving voltage of the device thus obtained is also high and insufficient for the above purpose.
後者も、ＩＯＶ程度の低電圧シフトは得られるものの、
不十分である。Although the latter can also achieve a low voltage shift of about IOV,
Not enough.
別の方法として、絶縁層を片側だけにして低電圧化を図
ることが試みられている（特開昭５９−１．４１１．９
４）。しかし、片側絶縁型素子は印加電圧に対する輝度
の立ち上がりが鈍く、発光輝度が低い欠点を有する。ま
た、駆動電圧の低電圧化も不十分である。As another method, an attempt has been made to reduce the voltage by using an insulating layer only on one side (Japanese Patent Laid-Open No. 59-1.411.9
4). However, the one-sided insulation type element has the disadvantage that the luminance rises slowly with respect to the applied voltage and the luminance is low. Furthermore, lowering of the driving voltage is also insufficient.
絶縁層を持たない直流駆動のＥＬも多く研究されている
［応用物理、第５１巻、第３号、３７２頁、 １９８２
年、ジャパニーズ・ジャーナル・オブ・アプライド・フ
ィジックス（Ｊａｐａｎｅｓｅ Ｊｏｕｒｎａｌ ｏｒ
Ａｐｐｌｉｅｄ Ｐｈｙｓｉｃｓ ） 、 ２５巻、
Ｌ ９６１頁。Many studies have also been conducted on DC-driven ELs that do not have an insulating layer [Applied Physics, Vol. 51, No. 3, p. 372, 1982
Japanese Journal of Applied Physics (Japanese Journal or
Applied Physics), Volume 25,
L 961 pages.
１９８６年］。しかし、直流駆動素子ではＩＯＶ程度の
低電圧で発光する例もあるが、素子に流れる電流量が大
きいため、消費電力が大きく、さらに、寿命が短いとい
う欠点を有する。1986]. However, although there are examples of direct current driven elements that emit light at a voltage as low as IOV, they have the drawbacks of high power consumption and short lifespan because the amount of current flowing through the element is large.
［発明が解決しようとする問題点コ
上述″したように、従来のＥＬでは低電圧で高輝度を得
るのが難しい。そのため、ＥＬを用いたデイスプレィの
駆動回路には、特別に設計された高耐圧ＩＣが使用され
ている。しかし、高耐圧ＩＣは高価であり、デイスプレ
ィが高価になるという問題がある。通常のＩＣ駆動に適
した、７０Ｖ以下の電圧で高輝度を示す素子の開発が望
まれている。[Problems to be Solved by the Invention] As mentioned above, it is difficult to obtain high brightness at low voltage with conventional EL.Therefore, a specially designed high brightness is required for the drive circuit of a display using EL. High-voltage ICs are used. However, high-voltage ICs are expensive, and there is a problem in that the display becomes expensive. It is desirable to develop elements that are suitable for normal IC driving and exhibit high brightness at a voltage of 70 V or less. It is rare.
本発明は、通常のＩＣを用いて駆動できる、低電圧駆動
ＥＬを提供するものである。The present invention provides a low voltage drive EL that can be driven using a normal IC.
［問題点を解決するための手段］
かかる状況下において、本発明者らは、低電圧で十分な
輝度の発光を示す発光層構造について鋭意研究を重ねた
結果、発光層にＰ型半導体を接合することにより、発光
しきい電圧を１００Ｖ前後低電圧化できる驚くべき現象
を見出し、本発明を成すに至った。[Means for Solving the Problems] Under such circumstances, the inventors of the present invention have conducted intensive research on a light emitting layer structure that emits light with sufficient brightness at low voltage, and as a result, they have discovered that a P-type semiconductor is bonded to the light emitting layer. By doing so, we have discovered a surprising phenomenon in which the emission threshold voltage can be lowered to around 100V, and have accomplished the present invention.
すなわち、本発明は、少なくとも一方か透明である一対
の電界印加用電極間に発光層を有し、発光層と電界印加
用電極間の少なくとも一方に絶縁層を有する交流電界の
印加に応じて発光する薄膜型エレクトロルミネッセンス
素子において、前記発光層にＰ型半導体あるいはＰ型半
導体を含有する薄層を有する薄膜型エレクトロルミネッ
センス素子である。That is, the present invention has a light-emitting layer between a pair of electrodes for applying an electric field, at least one of which is transparent, and an insulating layer between the light-emitting layer and the electrode for applying an electric field, and emits light in response to application of an alternating current electric field. In the thin film electroluminescent device, the light emitting layer includes a P-type semiconductor or a thin layer containing a P-type semiconductor.
絶縁層を持たない直流駆動型ＥＬでは、硫化銅等のＰ型
半導体を発光層に接合した構造のものが従来存在する（
特公昭５８−４２９８０）。しかし、硫化銅層を有する
直流駆動ＥＬは、他の構造の直流駆動ＥＬにくらべて、
特別に低電圧で作動することはなく、また、作動機構的
にも、逆バイアス電圧を印加して、直流電流を流す必要
があると考えられており［シン・ソリッド・フイルムズ
（Ｔｈｉｎ ５ｏｌｉｄ Ｆｉｌｍｓ） 、 １１０
巻９３頁。Conventionally, DC-driven ELs without an insulating layer have a structure in which a P-type semiconductor such as copper sulfide is bonded to a light-emitting layer (
Special Publication No. 58-42980). However, compared to DC driven ELs with other structures, the DC driven EL having a copper sulfide layer has
It does not operate at a particularly low voltage, and in terms of its operating mechanism, it is thought that it is necessary to apply a reverse bias voltage to flow a direct current [Thin Solid Films] , 110
Volume 93 pages.
１９８３年；ジャパニーズ・ジャーナル・オブ・アブラ
イド壷フィジックス（Ｊａｐａｎｅｓｅ Ｊｏｕｒｎａ
ｌｏｆ’ Ａｐｐｌｉｅｄ Ｐｈｙｓｊｃｓ） 、
２５巻、 Ｌ ９６１頁、 １．９８６年］、絶
縁層を持つ交流駆動ＥＬの発光層にＰ型半導体を接合す
ることは行われていない。絶縁層を有するＥＬにおいて
、原理的に有効に機能しな゛いと考えられていた、硫化
銅等のＰ型半導体の発光層への接合により、前述のＮ型
半導体を接合した素子よりもはるかに大きな効果が得ら
れるのは驚くべき事である。1983; Japanese Journal of Ablide Bottle Physics
lof' Applied Physjcs),
25, L 961, 1.986], a P-type semiconductor has not been bonded to the light emitting layer of an AC-driven EL having an insulating layer. In EL with an insulating layer, bonding of a P-type semiconductor such as copper sulfide to the light-emitting layer, which was thought not to function effectively in principle, is much more effective than the device with the aforementioned N-type semiconductor bonded. It's amazing how great the effect can be.
本発明におけるＰ型半導体は特に限定はされないが、硫
化銅（ＣｕＳ、ＣｕＩ２ Ｓ、Ｃｕｔ Ｓ）、酸化ニッ
ケル（Ｎｉｐ）、酸化銅（ＣｕＩ２０）、セレン化カド
ミウム（ＣｄＳｅ）、セレン化鉛（ＰｂＳｅ）、テルル
化アンチモン（Ｓｂ２Ｔｅ３）、酸化クロム（ＣｒＯ：
＋）、酸化マンガン（Ｍｎ２０３）、酸化鉄
（Ｆｅｄ、）、硫化鉄（ＦｅＳ）、酸化コバルト（Ｃｏ
ｏ）、酸化プラセオジウム（Ｐｒ２０：＋）、ヨウ化銅
（ＣｕＩ）、酸化銀（Ａｇ２０）、硫化スズ（ＳｎＳ）
、酸化モリブデン（Ｍｏ０２）、酸化ビスマス
（Ｂ ｌ ２０３） 、硫化銀（Ａｇ２Ｓ）、硫化鉛（
ＰｂＳ）、炭化ケイ素（Ｓ ｉ Ｃ） 、およびアクセ
プターレベルを形成する不純物をドープした、シリコン
（Ｓｉ）、ゲルマニウム（Ｇｅ）、リン化ガリウム（Ｇ
ａＰ）、ヒ化ガリウム（ＧａＡｓ）、リン化インジウム
（ＩｎＰ）などを例示することができる。中でも硫化銅
は特に好ましい。P-type semiconductors in the present invention are not particularly limited, but include copper sulfide (CuS, CuI2S, CutS), nickel oxide (Nip), copper oxide (CuI20), cadmium selenide (CdSe), lead selenide (PbSe). , antimony telluride (Sb2Te3), chromium oxide (CrO:
+), manganese oxide (Mn203), iron oxide (Fed, ), iron sulfide (FeS), cobalt oxide (Co
o), praseodymium oxide (Pr20:+), copper iodide (CuI), silver oxide (Ag20), tin sulfide (SnS)
, molybdenum oxide (Mo02), bismuth oxide (B l 203), silver sulfide (Ag2S), lead sulfide (
PbS), silicon carbide (S i C), and silicon (Si), germanium (Ge), gallium phosphide (G
aP), gallium arsenide (GaAs), and indium phosphide (InP). Among them, copper sulfide is particularly preferred.
本発明の硫化銅はＣＬＩＳ％ Ｃｕｚ Ｓ、または両者
の混合物でもよく、一般にＣｕ ｘ Ｓで表わされ、Ｘ
は１≦Ｘ≦２の範囲である。Ｘが１より小さいか、ある
いは２より大きくて、化学量論比から大きくずれると、
均質な膜となりにくくなる。発光層に接合する層として
は、Ｐ型半導体単体、あるいは２種以上の混合物、ある
いはＰ型半導体と発光層母体材料との混合物からなる。The copper sulfide of the present invention may be CLIS% Cuz S, or a mixture of both, generally represented by Cu x S and X
is in the range 1≦X≦2. If X is smaller than 1 or larger than 2 and deviates significantly from the stoichiometric ratio,
It becomes difficult to form a homogeneous film. The layer bonded to the light-emitting layer is made of a single P-type semiconductor, a mixture of two or more types, or a mixture of a P-type semiconductor and a light-emitting layer matrix material.
発光層にＰ型半導体あるいはＰ型半導体を含有する層を
接合する方法には、スパッタ法、抵抗加熱蒸着法など一
般公知の蒸着法が用いられる。あるいは、発光層を金属
イオンを溶解した液に浸漬して、イオン化傾向の差によ
り、発光層表面にＰ型半導体層を析出させる方法も適用
できる。発光層がＺｎＳを母体とする場合は、発光層を
硫酸銅、酢酸銅、しゅう酸銅、塩化銅などの溶液中に浸
漬することにより、発光層表面に硫化銅層を形成するこ
とができる。As a method for bonding a P-type semiconductor or a layer containing a P-type semiconductor to the light emitting layer, a generally known vapor deposition method such as a sputtering method or a resistance heating vapor deposition method is used. Alternatively, a method can also be applied in which the light-emitting layer is immersed in a liquid containing dissolved metal ions, and a P-type semiconductor layer is deposited on the surface of the light-emitting layer based on the difference in ionization tendency. When the light-emitting layer is based on ZnS, a copper sulfide layer can be formed on the surface of the light-emitting layer by immersing the light-emitting layer in a solution of copper sulfate, copper acetate, copper oxalate, copper chloride, or the like.
Ｐ型半導体あるいはＰ型半導体を含有する層の膜厚は、
薄すぎると効果がなく、厚すぎてもむだであるために、
好ましくは５０λ〜１０，０００人、より好ましくは１
００λ〜５，０００人の範囲である。The thickness of the P-type semiconductor or the layer containing the P-type semiconductor is
If it's too thin, it's ineffective, and if it's too thick, it's useless.
Preferably 50λ to 10,000 people, more preferably 1
The range is from 00λ to 5,000 people.
本発明で用いる発光層の材料としては特に限定されない
が、Ｚｎ５ＳＺｎＳｅ、ＣｄＳ。The material for the light-emitting layer used in the present invention is not particularly limited, but includes Zn5SZnSe and CdS.
ＣｄＳｅ、Ｃａ５ＳＳｒＳＳＢａＳ等の硫化物およびセ
レン化物が好ましい。中でもＺｎＳは特に好ましい。Sulfides and selenides such as CdSe and Ca5SSrSSBaS are preferred. Among them, ZnS is particularly preferred.
本発明の発光中心は特に限定されないが、Ｍｎ、Ｃｅ、
Ｐ ｒ、Ｎｄ、Ｓｍ５ＥｕＳＴｂ。The luminescent center of the present invention is not particularly limited, but includes Mn, Ce,
P r, Nd, Sm5EuSTb.
Ｄｙ５Ｅｒ、ＨｏＳＴｍ、Ｌｕ、ＣｕＳＡｇ等−９＝
を挙げることができる。発光中心の濃度は、系に応じた
好ましい範囲が選ばれる。共付活剤としてフッ素や塩素
等のハロゲンアニオンを添加することもできる。ＺｎＳ
母体にＭｎまたはＴｂＦ３を添加した系は発光輝度が高
く特に好ましい。Dy5Er, HoSTm, Lu, CuSAg, etc.-9= can be mentioned. The concentration of the luminescent center is selected within a preferable range depending on the system. A halogen anion such as fluorine or chlorine can also be added as a co-activator. ZnS
A system in which Mn or TbF3 is added to the matrix is particularly preferable because it has high luminance.
発光層はスパッタ、電子ビーム蒸着、ＣＶＤ（ケミカル
・ペーパー・デポジション）、ＭＯＣＶＤ （有機金属
ケミカル・ペーパー・デポジション） 、ＭＢＥ （モ
レキュラー◆ビーム・エピタキシー）等の公知技術によ
り作成できる。The light-emitting layer can be formed by known techniques such as sputtering, electron beam evaporation, CVD (chemical paper deposition), MOCVD (organometallic chemical paper deposition), and MBE (molecular beam epitaxy).
発光層の膜厚は特に限定されないが、薄すぎると発光輝
度が低く、厚すぎると発光しきい電圧が高くなるため、
好ましくは、５００λ〜３０，０００人の範囲であり、
より好ましくはｌ 、 ０００ Ａ〜１５．０００人の
範囲である。The thickness of the light-emitting layer is not particularly limited, but if it is too thin, the luminance will be low, and if it is too thick, the threshold voltage will be high.
Preferably, it is in the range of 500λ to 30,000 people,
More preferably, it is in the range of 1,000 A to 15,000 people.
本発明の絶縁層は特に限定はされない。例示すれば、５
ｉ０２、Ｙ２Ｏ３、ＴｉＯ２、Ａｌ２Ｏ３、ＨｆＯ２、
Ｔａ２０５、
ＢａＴａ２０５．５ｒＴｉＯｚ、ＰｂＴｉＯ３、＝ １
０−
Ｓｉ３Ｎ４、Ｚｒ２Ｏ３等やこれらの混合膜または２種
以上の積層膜を挙げることができる。The insulating layer of the present invention is not particularly limited. For example, 5
i02, Y2O3, TiO2, Al2O3, HfO2,
Ta205, BaTa205.5rTiOz, PbTiO3, = 1
Examples include 0-Si3N4, Zr2O3, etc., a mixed film thereof, or a laminated film of two or more thereof.
作成方法−とじてはスパッタ、電子ビーム蒸着、ＣＶＤ
、ＭＢＥ、ＭＯＣＶＤ等の公知方法を挙げることができ
る。絶縁層の膜厚は特に限定されない゛が薄いと絶縁性
が悪く、厚いと発光しきい電圧が高くなるので、好まし
くは５００人〜２０．０００人、より好ましくは １，
０００人〜１０，０００人の範囲である。絶縁層は発光
層の両側に存在させても、片側だけに存在させてもよい
。Creation method: Sputtering, electron beam evaporation, CVD
, MBE, MOCVD, and other known methods. The thickness of the insulating layer is not particularly limited, but if it is thin, the insulation will be bad, and if it is thick, the emission threshold voltage will be high, so it is preferably 500 to 20,000 people, more preferably 1.
The number ranges from 000 to 10,000 people. The insulating layer may be present on both sides of the light emitting layer or only on one side.
電界印加用電極の少なくとも一方は、
ＳｎＯ２やＩ ｎ２０３または、これらの混合膜等の透
明電極が用いられる。透明でない電極としてはＡＩ、Ａ
ｕ５Ｎｉ等、通常の金属が用いられ、特に限定されない
。At least one of the electrodes for applying an electric field is a transparent electrode made of SnO2, In203, or a mixture thereof. AI, A are used as non-transparent electrodes.
Usual metals such as u5Ni are used, and there are no particular limitations.
素子を駆動する交流電界としては、波形はＳｉｎ波、矩
形波、パルス波、ノコギリ波等、特に限定されない。周
波数についても特に限定されないが、あまり低周波だと
輝度が低く、また必要以上に高周波である必要はなく、
通常３〇１１ｚ〜１００ｋｌｌｚの範囲が使用される。The waveform of the alternating current electric field for driving the element is not particularly limited, and may be a sine wave, a rectangular wave, a pulse wave, a sawtooth wave, or the like. The frequency is not particularly limited either, but if the frequency is too low, the brightness will be low, and there is no need to use a higher frequency than necessary.
Usually a range of 3011z to 100kllz is used.
次に、本発明の素子の構造の一例を第１〜３図に示す。Next, an example of the structure of the element of the present invention is shown in FIGS. 1 to 3.
２１はガラス基板、２２は透明電極、２３は絶縁層、２
４は発光層、２５はＰ型半導体層、２６は金属電極であ
る。素子はガラス基板上に各層を順次積層することによ
り作成される。Ｐ型半導体層は発光層の片側面のみに作
成しても、両側に作成しても、又、発光層の中間に作成
してもよい。さらに、Ｐ型半導体層−発光層の繰り返し
からなる積層構造にしてもよい。21 is a glass substrate, 22 is a transparent electrode, 23 is an insulating layer, 2
4 is a light emitting layer, 25 is a P-type semiconductor layer, and 26 is a metal electrode. The device is fabricated by sequentially laminating each layer on a glass substrate. The P-type semiconductor layer may be formed only on one side of the light emitting layer, on both sides, or in the middle of the light emitting layer. Furthermore, a stacked structure consisting of a P-type semiconductor layer and a light emitting layer may be used.
［作 用コ
発光層にＰ型半導体層を接合させることにより、発光し
きい電圧が大きく低下する詳細な機構は不明であるが、
以下のように推定される。[Function] Although the detailed mechanism by which the emission threshold voltage is greatly reduced by bonding the P-type semiconductor layer to the light-emitting layer is unknown,
It is estimated as follows.
Ｐ型半導体と発光層の界面に両者の仕事関数差にもとす
く電位障壁が形成され、外部から電圧を印加した場合に
界面に局部的な高電界が印加される。Ｐ型半導体層から
適当な数の電子がトンネル効果により電位障壁を通って
発光層に注入され、高電界により加速される。すなわち
、局所的な高電界の印加と電子の注入の相乗作用により
、極めて大きな効果がもたらされるものと推定される。A potential barrier is formed at the interface between the P-type semiconductor and the light-emitting layer due to the work function difference between the two, and when a voltage is applied from the outside, a localized high electric field is applied to the interface. An appropriate number of electrons are injected from the P-type semiconductor layer into the light-emitting layer through the potential barrier due to the tunneling effect, and are accelerated by the high electric field. That is, it is estimated that the synergistic effect of the local application of a high electric field and the injection of electrons brings about an extremely large effect.
［実施例］
以下、実施例によって本発明を具体的に説明する。゛
実施例１
スパッタ法により、ガラス基板上に厚さ約１．０００人
のＩＴＯ（インジウム・スズ酸化物）透明電極を形成す
る。[Examples] Hereinafter, the present invention will be specifically explained with reference to Examples. Example 1 An ITO (indium tin oxide) transparent electrode having a thickness of approximately 1,000 wafers is formed on a glass substrate by sputtering.
更に、スパッタ法により厚さ約５，０００人の酸化タン
タル（Ｔａ２０ｓ）膜を形成し、絶縁層とする。Furthermore, a tantalum oxide (Ta20s) film with a thickness of approximately 5,000 yen is formed by sputtering to serve as an insulating layer.
続いて、ＭｎをドープしたＺｎＳをターゲットとしたス
パッタ法により、基板温度２５０°Ｃで厚さ約１ｏ、ｏ
ｏｏｘのＭｎを発光中心とする、ＺｎＳ発光層を形成し
、アルゴン雰囲気中５５０℃、２時間の熱処理を行う。Subsequently, by sputtering using Mn-doped ZnS as a target, a film with a thickness of approximately 1.
A ZnS light-emitting layer with Mn in oox as the emission center is formed, and heat treatment is performed at 550° C. for 2 hours in an argon atmosphere.
次に８０℃の塩化第一銅飽和水溶液中に３０秒間浸漬す
ることにより、発光層表面に硫化銅層（Ｃｕｔ、ｇＳ）
を形成する。Next, by immersing it in a cuprous chloride saturated aqueous solution at 80°C for 30 seconds, a copper sulfide layer (Cut, gS) is formed on the surface of the light emitting layer.
form.
水洗、乾燥の後、スパッタ法により、厚さ約５．０００
＆の酸化タンタル膜を形成し絶縁層とする。After washing with water and drying, the thickness is approximately 5,000 mm by sputtering method.
A tantalum oxide film of & is formed as an insulating layer.
最後にＡＩを真空蒸着して背面電極を形成して第１図に
示すＥＬを作成する。Finally, AI is vacuum-deposited to form a back electrode to create the EL shown in FIG.
第４図に実施例１の素子（線Ａ）と硫化銅層が存在しな
いことだけを除き他は実施例１と同様に作成した素子（
線Ｂ）の発光特性を示す。FIG. 4 shows the device of Example 1 (line A) and the device prepared in the same manner as Example 1 except that the copper sulfide layer was not present (
The light emission characteristics of line B) are shown.
素子の駆動には５ｋＨｚのサイン波を用いた。硫化銅層
を接合した素子は、硫化銅層を持たな０素子に比べて、
約１２０ｖ低電圧より発光が開始することが示されてい
る。A 5 kHz sine wave was used to drive the element. A device with a copper sulfide layer bonded has a
It has been shown that light emission starts at a low voltage of about 120V.
実施例２
第５図において、実施例１と同様にしてガラス基板３１
上にＩＴＯ透明電極３２ ： １，０００人、酸化タン
タル膜 ３３ ： ５，０００人、酸化ケイ素（Ｓｉ０
２）膜３４：］−、５００人を順次形成する。Example 2 In FIG. 5, a glass substrate 31 is prepared in the same manner as in Example 1.
ITO transparent electrode 32: 1,000 people, tantalum oxide film 33: 5,000 people, silicon oxide (Si0
2) Films 34: ]-, 500 are formed in sequence.
そのうえに基板温度２５０℃でＺｎＳ膜３８：２．００
０人をスパッタ法で形成する。In addition, the ZnS film is 38:2.00 at a substrate temperature of 250°C.
0 person is formed by sputtering method.
次に、８０℃の塩化第一銅飽和水溶液中に６０秒間浸漬
することにより、ＺｎＳ層表面に硫化銅層３５を形成す
る。Next, a copper sulfide layer 35 is formed on the surface of the ZnS layer by immersing it in a cuprous chloride saturated aqueous solution at 80° C. for 60 seconds.
水洗、乾燥の後、基板温度２５０℃で厚さ約１．０，０
ＯＯＸのＭｎを発光中心とするＺｎＳ発光層３６を形成
し、アルゴン雰囲気中５５０℃、２時間の熱処理を行う
。After washing with water and drying, the thickness is approximately 1.0,0 at a substrate temperature of 250℃.
A ZnS light-emitting layer 36 whose light emission center is Mn in OOX is formed, and heat treatment is performed at 550° C. for 2 hours in an argon atmosphere.
次にスパッタ法により、厚さ約１，５００人の酸化ケイ
素膜３４、厚さ約５，０００人の酸化タンタル膜３３を
順次形成する。Next, a silicon oxide film 34 with a thickness of about 1,500 thick and a tantalum oxide film 33 with a thickness of about 5,000 thick are sequentially formed by sputtering.
最後にＡ１を真空蒸着して背面電極３７を形成する。Finally, A1 is vacuum deposited to form the back electrode 37.
第６図に実施例２の素子（線Ａ）と硫化銅層だけを除き
他は実施例２と同様に作成した素子（線Ｂ）の発光特性
を示す。FIG. 6 shows the luminescence characteristics of the device of Example 2 (line A) and the device (line B) prepared in the same manner as in Example 2 except for the copper sulfide layer.
素子の駆動には５ｋｌｌｚのサイン波を用いた。硫化銅
層を接合した素子は硫化銅層を持たない素子に比べて、
約１００Ｖ低電圧より発光が開始することが明らかであ
る。A 5kllz sine wave was used to drive the element. A device with a copper sulfide layer bonded has a
It is clear that light emission starts at a low voltage of about 100V.
実施例３
ガラス基板上にＩＴＯ透明電極： １ 、０００ Ｘ
、酸化タンタル： ２，０００Ｘｓ酸化ケイ素５００
人、Ｍｎを発光中心に持つＺｎＳ膜： ３，０ＯＯＡ
を順次形成し、０．１％Ｈ２Ｓ（アルゴン希釈）雰囲気
中７００℃、２時間の熱処理を行う。Example 3 ITO transparent electrode on glass substrate: 1,000×
, tantalum oxide: 2,000Xs silicon oxide 500
ZnS film with Mn as the luminescent center: 3,0OOA
are sequentially formed and heat treated at 700° C. for 2 hours in a 0.1% H2S (argon diluted) atmosphere.
次にＣＬＩ２ＳとＺｎＳの等モル混合物をターゲットと
したスパッタ法により、Ｃｕ２ ＳとＺｎＳの混合膜：
１，００（Ｄを形成する。Next, a mixed film of Cu2S and ZnS was formed by sputtering using an equimolar mixture of CLI2S and ZnS as a target:
1,00 (form D.
その後、スパッタ法により、厚さ ５００人の酸化ケイ
素膜、厚さ ２．０００人の酸化タンタル膜を順次形成
する。Thereafter, a 500-thickness silicon oxide film and a 2,000-thick tantalum oxide film are successively formed by sputtering.
最後にＡＩを真空蒸着して背面電極を形成する。５ｋＨ
ｚのサイン波を用いて発光特性を調べたところ、発光開
始電圧は２０Ｖであり、５０Ｖでほぼ飽和輝度に達した
。Finally, AI is vacuum deposited to form a back electrode. 5kH
When the light emitting characteristics were investigated using a z sine wave, the light emission starting voltage was 20V, and almost saturated brightness was reached at 50V.
実施例４
実施例１と同様にしてガラス基板上にＩＴＯ透明電極：
Ｌ、０００人、酸化タンタル： ５，０００人を
順次形成する。Example 4 An ITO transparent electrode was formed on a glass substrate in the same manner as in Example 1:
L, 000 people, tantalum oxide: 5,000 people are formed sequentially.
続いて、ＣｅＦ３をドープしたＳｒＳをターゲットとし
たスパッタ法により、基板温度２５０℃で厚さ約１０，
０００人のＣｅを発光中心とする、ＳｒＳ発光層を形成
し、アルゴン雰囲気中６５０℃、２時間の熱処理を行う
。Subsequently, by sputtering using SrS doped with CeF3 as a target, a film with a thickness of approximately 10 mm was formed at a substrate temperature of 250°C.
A SrS light-emitting layer having a luminescence center of 0,000% Ce is formed, and heat treatment is performed at 650° C. for 2 hours in an argon atmosphere.
次に、Ｃｕ２Ｓをターゲットとしたスパッタ法によ゛す
、硫化銅膜： １ 、０００ Ｘを形成する。Next, a copper sulfide film of 1,000X is formed by sputtering using Cu2S as a target.
その後、スパッタ法により厚さ １，５００人の酸化ケ
イ素膜、厚さ ５，０ＯＯＸの酸化タンタル膜を順次形
成する。Thereafter, a silicon oxide film with a thickness of 1,500 mm and a tantalum oxide film with a thickness of 5,000 mm are successively formed by sputtering.
最後にＡＩを真空蒸着して背面電極を形成する。Finally, AI is vacuum deposited to form a back electrode.
５ ｋ ｔ（ｚのサイン波を用いて発光特性を調べたと
ころ、硫化銅膜だけを除き他は実施例４と同様に作成し
た素子に比べ、発光開始電圧か約８０Ｖ低電圧シフトす
ることが認められた。When the luminescence characteristics were investigated using a sine wave of 5kt(z), it was found that the luminescence starting voltage was shifted to a lower voltage by about 80 V compared to a device prepared in the same manner as in Example 4 except for the copper sulfide film. Admitted.
［発明の効果］
本発明によれば、従来素子にくらべ極めて低電圧で高輝
度な発光を示し、消費電力も少なく、長寿命のＥＬを提
供できる。本発明のＥＬの駆動回路には通常の低耐圧Ｉ
Ｃを用いることかでき、安価な表示装置を提供できる。[Effects of the Invention] According to the present invention, it is possible to provide an EL device that emits light with high brightness at an extremely low voltage compared to conventional elements, consumes less power, and has a long life. The EL drive circuit of the present invention has a conventional low breakdown voltage I.
C can be used, and an inexpensive display device can be provided.
第１．２．３．５図は本発明のＥＬ素子の一実施例の断
面図、
第４．６図はＥＬ素子の発光特性を示すグラフ、
第７図は従来型の２重絶縁型ＥＬ素子の断面図である。
＋ １． 、２１ 、３１・・・ガラス基板、１２，２
２．３２・・・透明電極、１３・・・第１絶縁層、１５
・・・第２絶縁層、２３．８３・・・絶縁層、１．４，
２４．３６・・・発光層、３４・・・酸化ケイ素層、
２５．３５・・・Ｐ型半導体層（硫化銅層）、２６・・
・金属電極、１．６ 、３７・・・背面電極、３８・・
・硫化亜鉛層。
特許出願人 旭化成工業株式会社
代理人 弁理士 小 松 秀 岳Figure 1.2.3.5 is a cross-sectional view of one embodiment of the EL element of the present invention, Figure 4.6 is a graph showing the light emitting characteristics of the EL element, and Figure 7 is a conventional double insulation type EL. FIG. 3 is a cross-sectional view of the element. +1. , 21 , 31... glass substrate, 12, 2
2.32... Transparent electrode, 13... First insulating layer, 15
...Second insulating layer, 23.83...Insulating layer, 1.4,
24.36...Light emitting layer, 34...Silicon oxide layer, 25.35...P type semiconductor layer (copper sulfide layer), 26...
・Metal electrode, 1.6, 37... Back electrode, 38...
・Zinc sulfide layer. Patent applicant Asahi Kasei Industries Co., Ltd. agent Patent attorney Hide Komatsu
Claims (1)
に発光層を有し、発光層と電界印加用電極間の少なくと
も一方に絶縁層を有する、交流電界の印加に応じて発光
する薄膜型エレクトロルミネッセンス素子において、前
記発光層にＰ型半導体あるいはＰ型半導体を含有する薄
層を有することを特徴とする薄膜型エレクトロルミネッ
センス素子。A thin film type electroluminescent device that has a light emitting layer between a pair of electric field applying electrodes, at least one of which is transparent, and has an insulating layer between the light emitting layer and the electric field applying electrode, and emits light in response to application of an alternating current electric field. 1. A thin film electroluminescent device, characterized in that the light emitting layer has a P-type semiconductor or a thin layer containing a P-type semiconductor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62279033A JPH01122594A (en) | 1987-11-06 | 1987-11-06 | Thin film type electroluminescence element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62279033A JPH01122594A (en) | 1987-11-06 | 1987-11-06 | Thin film type electroluminescence element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01122594A true JPH01122594A (en) | 1989-05-15 |
Family
ID=17605459
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62279033A Pending JPH01122594A (en) | 1987-11-06 | 1987-11-06 | Thin film type electroluminescence element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01122594A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007100020A1 (en) * | 2006-03-02 | 2007-09-07 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, light-emitting device, lighting device, and electronic appliance |
| JP2015065176A (en) * | 2004-05-21 | 2015-04-09 | 株式会社半導体エネルギー研究所 | Light-emitting device |
-
1987
- 1987-11-06 JP JP62279033A patent/JPH01122594A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2015065176A (en) * | 2004-05-21 | 2015-04-09 | 株式会社半導体エネルギー研究所 | Light-emitting device |
| WO2007100020A1 (en) * | 2006-03-02 | 2007-09-07 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting element, light-emitting device, lighting device, and electronic appliance |
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