JPH01120810A - Microwave plasma production device - Google Patents
Microwave plasma production deviceInfo
- Publication number
- JPH01120810A JPH01120810A JP62278465A JP27846587A JPH01120810A JP H01120810 A JPH01120810 A JP H01120810A JP 62278465 A JP62278465 A JP 62278465A JP 27846587 A JP27846587 A JP 27846587A JP H01120810 A JPH01120810 A JP H01120810A
- Authority
- JP
- Japan
- Prior art keywords
- reactor
- gas supply
- supply chamber
- gas
- dielectric panel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title description 2
- 239000002184 metal Substances 0.000 claims abstract description 12
- 239000003989 dielectric material Substances 0.000 claims description 8
- 238000000034 method Methods 0.000 abstract description 6
- 239000000758 substrate Substances 0.000 abstract description 3
- 239000000498 cooling water Substances 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000010408 film Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 239000005297 pyrex Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は主としてＣＶＤ装置等として用いられるプラズ
マ発生装置の改良に関するものである。DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to an improvement of a plasma generation device mainly used as a CVD device or the like.
（従来の技術）
−ｍに低温プラズマを発生さるための励起手段としては
、ＲＦを用いる場合とマイクロ波を用いる場合があるが
、後者の方が、■より低温で高密度のプラズマが得られ
ること、■電極による汚染がないこと、■装置の構造が
簡単になること、等の利点がある。(Prior art) There are two ways to use excitation means to generate low-temperature plasma: RF and microwave; however, the latter method produces a lower temperature and higher density plasma than ■. There are advantages such as: (1) there is no contamination due to electrodes; (2) the structure of the device is simplified.
ところで、従来よりよく用いられているマイクロ波プラ
ズマ処理装置は、導波管中に石英管を貫通させ、石英管
中でプラズマを発生させて試料室に引き出す構造になっ
ていた。By the way, microwave plasma processing apparatuses that have been commonly used have a structure in which a quartz tube is passed through a waveguide, and plasma is generated in the quartz tube and drawn out to a sample chamber.
しかし、このような構造のものは、■プラズマ生成部が
導波管の大きさで限定されるため、多数処理や大型試料
を処理することができない、■プラズマに対してマイク
ロ波が垂直に入射するため、マイクロ波の反射が大きく
、プラズマも不均一にな′りやすい、という欠点があっ
た。However, with this type of structure, ■The plasma generation part is limited by the size of the waveguide, so it is not possible to process large numbers of samples or large samples.■The microwave is incident perpendicularly to the plasma. As a result, the microwaves are reflected heavily and the plasma tends to become non-uniform.
そこで、近時にあってはマイクロ波プラズマを用いて極
めて大きな面積を処理できる装置として、はしご状の周
期構造を利用する方式（Ｒ，Ｇ、Ｂｏｓｉｓｉｏ。Therefore, recently, a method using a ladder-like periodic structure (R, G, Bosisio) has been developed as a device that can treat an extremely large area using microwave plasma.
Ｃ，Ｆ、 Ｗｅｉｓｓｆｌｏｃｈ、 Ｍ、 Ｒ，Ｗｅｒ
ｔｈｅｉｍｅｒ ： Ｊｏｕｒｎａｌｏｆ Ｍｉｃｒｏ
ｗａｖｅ Ｐｏｗｅｒ、 ７（４）、 Ｐ３２５〜３
４６．１９７２）や、本出願人が特願昭６０−１４３０
３６号及び同じく特願昭６０−２４００７０号等で提案
した誘電体被覆線路を用いる方式等が試みられている。C, F., Weissfloch, M., R., Wer.
theimer: Journal of Micro
wave Power, 7(4), P325-3
46.1972), and the applicant filed a patent application in 1986-1430.
Attempts have been made to use a dielectric covered line as proposed in No. 36 and Japanese Patent Application No. 60-240070.
（発明が解決しようとする問題点）
上記した周期構造方式や誘電体被覆線路方式は、処理面
積を広く設定できる反面、プラズマ用のガスを被処理物
に対して側方から導入し側方へ排気するため、処理能率
や処理の均一性を十分高めることが困難であった。(Problems to be Solved by the Invention) The above-mentioned periodic structure method and dielectric covered line method can set a wide processing area, but on the other hand, the plasma gas is introduced from the side of the object to be processed. Because of exhaustion, it was difficult to sufficiently improve processing efficiency and processing uniformity.
本発明は、かかる問題点に鑑みて成されたものであり、
大面積にマイクロ波プラズマを発生させ、しかも処理能
率及び処理の均一性を向上させることのできるマイクロ
波プラズマ発生装置を提供せんとするものである。The present invention has been made in view of such problems,
It is an object of the present invention to provide a microwave plasma generator capable of generating microwave plasma over a large area and improving processing efficiency and uniformity of processing.
（問題点を解決するための手段）
本発明は、マイクロ波発振器からのマイクロ波を伝送す
る導波管に連通された誘電体で少なくとも一壁面を形成
した反応器と、前記誘電体を境にして反応器と相対向す
べく配置されたガス供給室、を具備して成り、前記誘電
体にはガス供給室内のガスを反応器内に導くための複数
の貫通孔を設けると共に、ガス供給室側の表面には前記
貫通孔部を除いて金属板を貼設したことを要旨とするマ
イクロ波プラズマ発生装置である。(Means for Solving the Problems) The present invention provides a reactor in which at least one wall is formed of a dielectric material connected to a waveguide that transmits microwaves from a microwave oscillator, and a gas supply chamber disposed to face the reactor; the dielectric body is provided with a plurality of through holes for guiding the gas in the gas supply chamber into the reactor; This microwave plasma generator is characterized in that a metal plate is pasted on the side surface except for the through hole portion.
（作 用）
本発明に係るマイクロ波プラズマ発生装置は、マイクロ
波発振器からのマイクロ波を伝送する導波管に連通され
た誘電体で少なくとも一壁面を形成した反応器と、前記
誘電体を境にして反応器と相対向すべく配置されたガス
供給室を具備して成り、前記誘電体にはガス供給室内の
ガスを反応器内に導くための複数の貫通孔を設けると共
に、ガス供給室側の表面には前記貫通孔部を除いて金属
板を貼設したものであり、ガス供給室内のガスは複数の
貫通孔を通して反応器内の被処理物に対して垂直に流れ
るためガス流れが均一化して均一処理が可能となると共
に処理能率も向上する。また本発明では誘電体のガス供
給室側の表面に金属を貼設したので、マイクロ波がガス
供給室側に漏れてガス供給室内でプラズマが発生するこ
ともない。(Function) The microwave plasma generation device according to the present invention includes a reactor in which at least one wall is formed of a dielectric material that is connected to a waveguide that transmits microwaves from a microwave oscillator, and a reactor that has a boundary between the dielectric material and the reactor. The dielectric body is provided with a plurality of through holes for guiding the gas in the gas supply chamber into the reactor, and the dielectric body is provided with a plurality of through holes for guiding the gas in the gas supply chamber into the reactor. A metal plate is pasted on the side surface except for the through holes, and the gas in the gas supply chamber flows perpendicularly to the object to be treated in the reactor through the multiple through holes, so the gas flow is This makes uniform processing possible and improves processing efficiency. Further, in the present invention, since metal is pasted on the surface of the dielectric on the gas supply chamber side, microwaves will not leak to the gas supply chamber side and plasma will not be generated within the gas supply chamber.
（実 施 例）
以下本発明を添付図面に示す一実施例に基づいて説明す
る。(Example) The present invention will be described below based on an example shown in the accompanying drawings.
図面において、１はマイクロ波発振器（図示せず）で発
生したマイクロ波を伝送する導波管であり、その終端に
は例えば石英ガラスやパイレックスガラス等の誘電損失
の小さな誘電体２が連通されている。In the drawing, 1 is a waveguide that transmits microwaves generated by a microwave oscillator (not shown), and a dielectric material 2 with low dielectric loss, such as quartz glass or Pyrex glass, is connected to the end of the waveguide. There is.
３は前記誘電体２を天井壁とし、他の壁面は金属で気密
状態に形成された反応器であり、本実施例では周囲側壁
を二重構造として内部に冷却水用の通流室４を備えた構
成のものを示している。Reference numeral 3 designates a reactor in which the dielectric 2 is used as a ceiling wall, and the other walls are made of metal and formed in an airtight state. In this embodiment, the surrounding side walls have a double structure and a flow chamber 4 for cooling water is provided inside. The configuration shown is as follows.
５は前記誘電体２を境にして反応器３と相対向すべく、
すなわち本実施例では誘電体２の上部に配置された金属
製のガス供給室であり、このガス供給室５と反応器３と
は誘電体２に開設した複数の貫通孔６によって連通せし
められている。そして、誘電体２のガス供給室５側の表
面には貫通孔６部を除いて金属板７を貼設し、マイクロ
波がガス供給室５側に漏れないようになっている。5 faces the reactor 3 with the dielectric 2 as a boundary,
That is, in this embodiment, the gas supply chamber 5 is made of metal and is placed above the dielectric body 2, and the gas supply chamber 5 and the reactor 3 are communicated with each other through a plurality of through holes 6 formed in the dielectric body 2. There is. A metal plate 7 is attached to the surface of the dielectric 2 on the gas supply chamber 5 side except for the through hole 6 portion, so that microwaves do not leak to the gas supply chamber 5 side.
なお、図面中８は反応器３の底壁に設けられたガス排気
口、９は反応器３内に位置せしめられた被処理物である
基板を示す。In the drawings, reference numeral 8 indicates a gas exhaust port provided on the bottom wall of the reactor 3, and reference numeral 9 indicates a substrate, which is an object to be processed, located within the reactor 3.
以上述べた如く構成した本発明に係るマイクロ波プラズ
マ発生装置では、反応器３内を排気し、低圧下において
ガス供給室５にガスを供給するとガスは誘電体２の複数
の貫通孔６を通って基板９に垂直に供給され、かかる状
態で誘電体２にマイクロ波を導入すると誘電体２から反
応器３内へプラズマを発生させることができる。In the microwave plasma generator according to the present invention configured as described above, when the inside of the reactor 3 is evacuated and gas is supplied to the gas supply chamber 5 under low pressure, the gas passes through the plurality of through holes 6 of the dielectric 2. If microwaves are introduced into the dielectric 2 in this state, plasma can be generated from the dielectric 2 into the reactor 3.
次に具体例について述べる。Next, a specific example will be described.
マイクロ波は２．４５ＧＩ１．の周波数のものを使用し
た。また反応器３の天井壁を構成する誘電体２には厚さ
２０ｍ、幅３００＋ｎ、孔径φ２Ｎの貫通孔６′を２４
個開設した石英ガラス板を採用した。更に、反応器３の
内側寸法は、マイクロ波の進行方向の長さ３６３Ｎ、幅
２００寵、高さ２００ｎとし、ＴＥモードのマイクロ波
を用いた場合、反応器３内がマイクロ波に対して共振器
構造となるようにした。The microwave is 2.45GI1. I used a frequency of . In addition, 24 through holes 6' with a thickness of 20 m, a width of 300+n, and a hole diameter of φ2N are formed in the dielectric material 2 constituting the ceiling wall of the reactor 3.
A separately made quartz glass plate was used. Furthermore, the inside dimensions of the reactor 3 are as follows: length in the direction of microwave propagation: 363N, width: 200cm, height: 200n; when using TE mode microwaves, the inside of the reactor 3 resonates with the microwaves. It was designed to have a container structure.
以上のような寸法の本発明装置の反応器３内を排気した
後、ガス供給室５よりＳ’ｉＨ，を反応器３内へ供給し
てアモルファスＳｉの作製を行った。After evacuating the inside of the reactor 3 of the apparatus of the present invention having the above dimensions, S'iH was supplied into the reactor 3 from the gas supply chamber 5 to produce amorphous Si.
この場合、ガス圧を０．１ｔｏｒｒ 、ガス流量は５０
ｓｃｃｒａに設定し、基板９として１２０ｍｍＸ２４０
Ｉｍのガラス板を設置した。In this case, the gas pressure is 0.1 torr and the gas flow rate is 50 torr.
120mm x 240 as the board 9.
A glass plate of Im was installed.
しかして、マイクロ波発振器よりマイクロ波を導入する
と石英ガラス板下にプラズマが発生し、基板９上にはほ
ぼ均一な薄膜が１着された。When microwaves were introduced from a microwave oscillator, plasma was generated under the quartz glass plate, and a substantially uniform thin film was deposited on the substrate 9.
なお、本発明装置は、上記した実施例の他にＳｉＮ膜の
作製、有機モノマーを用いた有機重合膜の形成等にも適
用し得ることは勿論である。In addition to the embodiments described above, the apparatus of the present invention can of course be applied to the production of SiN films, the formation of organic polymer films using organic monomers, and the like.
（発明の効果）
以上説明したように本発明に係るマイクロ波プラズマ発
生装置は、マイクロ波発振器からのマイクロ波を伝送す
る導波管に連通された誘電体で少なくとも一壁面を形成
した反応器と、前記誘電体を境にして反応器と相対向す
べく配置されたガス供給室を具備して成り、前記誘電体
にはガス供給室内のガスを反応器内に導くための複数の
貫通孔を設けると共に、ガス供給側の表面には前記貫通
孔部を除いて金属板を貼設したものであり、ガス供給室
内のガスは複数の貫通孔を通して反応器内の被処理物に
対して垂直に流れるためガス流れが均一化して均一処理
が可能となると共に処理能率も向上するという従来あっ
た問題点を解決できる優れた発明である。(Effects of the Invention) As explained above, the microwave plasma generator according to the present invention includes a reactor having at least one wall formed of a dielectric material and connected to a waveguide that transmits microwaves from a microwave oscillator. , comprising a gas supply chamber arranged to face the reactor with the dielectric as a boundary, and the dielectric has a plurality of through holes for guiding gas in the gas supply chamber into the reactor. In addition, a metal plate is pasted on the surface of the gas supply side except for the through-hole section, and the gas in the gas supply chamber is passed through the plurality of through-holes perpendicularly to the object to be treated in the reactor. This is an excellent invention that can solve the conventional problems in that the gas flow becomes uniform, making uniform processing possible and improving processing efficiency.
図面は本発明の一実施例を断面して示す模式図である。
１は導波管、２は誘電体、３は反応器、５はガス供給室
、６は貫通孔。The drawing is a schematic cross-sectional view of an embodiment of the present invention. 1 is a waveguide, 2 is a dielectric, 3 is a reactor, 5 is a gas supply chamber, and 6 is a through hole.
Claims (1)
波管に連通された誘電体で少なくとも一壁面を形成した
反応器と、前記誘電体を境にして反応器と相対向すべく
配置されたガス供給室を具備して成り、前記誘電体には
ガス供給室内のガスを反応器内に導くための複数の貫通
孔を設けると共に、ガス供給室側の表面には前記貫通孔
部を除いて金属板を貼設したことを特徴とするマイクロ
波プラズマ発生装置。(1) A reactor having at least one wall formed of a dielectric material connected to a waveguide that transmits microwaves from a microwave oscillator, and a reactor arranged to face the reactor with the dielectric material as a boundary. The dielectric body is provided with a plurality of through holes for guiding the gas in the gas supply chamber into the reactor, and the surface on the gas supply chamber side is provided with a plurality of through holes excluding the through holes. A microwave plasma generator characterized by having a metal plate attached.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62278465A JPH0644558B2 (en) | 1987-11-04 | 1987-11-04 | Microwave plasma generator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62278465A JPH0644558B2 (en) | 1987-11-04 | 1987-11-04 | Microwave plasma generator |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01120810A true JPH01120810A (en) | 1989-05-12 |
| JPH0644558B2 JPH0644558B2 (en) | 1994-06-08 |
Family
ID=17597707
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62278465A Expired - Fee Related JPH0644558B2 (en) | 1987-11-04 | 1987-11-04 | Microwave plasma generator |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0644558B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5914051A (en) * | 1990-09-26 | 1999-06-22 | Hitachi, Ltd. | Microwave plasma processing method and apparatus |
| EP1244214A1 (en) * | 2001-03-23 | 2002-09-25 | STMicroelectronics Limited | Phase control digital frequency divider |
| KR100416308B1 (en) * | 1999-05-26 | 2004-01-31 | 동경 엘렉트론 주식회사 | Plasma process device |
| JP2014075493A (en) * | 2012-10-04 | 2014-04-24 | Tokyo Electron Ltd | Deposition method and deposition device |
-
1987
- 1987-11-04 JP JP62278465A patent/JPH0644558B2/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5914051A (en) * | 1990-09-26 | 1999-06-22 | Hitachi, Ltd. | Microwave plasma processing method and apparatus |
| KR100416308B1 (en) * | 1999-05-26 | 2004-01-31 | 동경 엘렉트론 주식회사 | Plasma process device |
| US6830652B1 (en) | 1999-05-26 | 2004-12-14 | Tokyo Electron Limited | Microwave plasma processing apparatus |
| US7520245B2 (en) | 1999-05-26 | 2009-04-21 | Tadahiro Ohmi | Plasma processing apparatus |
| US7819082B2 (en) | 1999-05-26 | 2010-10-26 | Tadahiro Ohmi | Plasma processing apparatus |
| EP1244214A1 (en) * | 2001-03-23 | 2002-09-25 | STMicroelectronics Limited | Phase control digital frequency divider |
| US6696870B2 (en) | 2001-03-23 | 2004-02-24 | Stmicroelectronics Limited | Phase control digital frequency divider |
| JP2014075493A (en) * | 2012-10-04 | 2014-04-24 | Tokyo Electron Ltd | Deposition method and deposition device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0644558B2 (en) | 1994-06-08 |
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