JPH01112226A - Optical logic element - Google Patents
Optical logic elementInfo
- Publication number
- JPH01112226A JPH01112226A JP27114987A JP27114987A JPH01112226A JP H01112226 A JPH01112226 A JP H01112226A JP 27114987 A JP27114987 A JP 27114987A JP 27114987 A JP27114987 A JP 27114987A JP H01112226 A JPH01112226 A JP H01112226A
- Authority
- JP
- Japan
- Prior art keywords
- refractive index
- quantum well
- well layer
- light
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 18
- 239000004065 semiconductor Substances 0.000 claims abstract description 12
- 230000001154 acute effect Effects 0.000 claims abstract description 4
- 238000010030 laminating Methods 0.000 claims description 2
- 239000000758 substrate Substances 0.000 abstract description 5
- 230000004888 barrier function Effects 0.000 abstract description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 2
- 238000010521 absorption reaction Methods 0.000 description 3
- 230000010365 information processing Effects 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F3/00—Optical logic elements; Optical bistable devices
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Optics & Photonics (AREA)
Abstract
Description
【発明の詳細な説明】 （産業上の利用分野） 本発明は光情報処理等に用いる光論理素子に関する。[Detailed description of the invention] (Industrial application field) The present invention relates to an optical logic element used for optical information processing and the like.
（従来の技術）
近年、光の持つ高度な並列情報伝達、処理特性を利用し
たデジタル情報処理が注目を集めている。このような光
によるデジタル情報処理を実現するには、光を２次元的
に制御するいわゆる固型論理素子の開発が必要である。(Prior Art) In recent years, digital information processing that utilizes the highly parallel information transmission and processing characteristics of light has attracted attention. In order to realize such digital information processing using light, it is necessary to develop so-called solid-state logic elements that control light two-dimensionally.
そのうちの一つとして光信号を光によりオンオフする光
ゲートがある。従来、直型の光ゲートとして第２図に示
す構造がアプライド・フィジクス・レターズ（Ａｐｐｌ
ｉｅｄＰｈｙｓｉｃｓ Ｌｅｔｔｅｒｓ） ４６．９１
８． （１９８５）においてシュウエル（Ｊｅｗｅｌｌ
、 Ｊ、 Ｌ、 ）等によって報告されている。この
光ゲートはファブリ・ペロ共振器２１の内部に量子井戸
層１２をはきんだ構造である。第３図に示すようなファ
ブリ・ベロ共振器の共振特性を一利用して光によるスイ
ッチングを行っている。制御光１７が入射しない時には
第３図３１に示すように信号光１６に対して高透過状態
にある。制御光１７が入射すると量子井戸層１２による
吸収が制御光１７によって飽和して量子井戸層１２の屈
折率が変化して３２のようになり信号光１６に対して低
透過状態になって出力光１８の強度がスイッチングきれ
る。One of these is an optical gate that turns on and off optical signals using light. Conventionally, the structure shown in Figure 2 as a direct type optical gate was published in Applied Physics Letters (Appl.
iedPhysics Letters) 46.91
8. (1985), Jewell (1985).
, J, L, ) et al. This optical gate has a structure in which a quantum well layer 12 is placed inside a Fabry-Perot resonator 21. Optical switching is performed by making full use of the resonance characteristics of a Fabry-Béro resonator as shown in FIG. When the control light 17 is not incident, the signal light 16 is in a highly transparent state as shown in FIG. 31. When the control light 17 is incident, the absorption by the quantum well layer 12 is saturated by the control light 17, and the refractive index of the quantum well layer 12 changes to become 32, resulting in a low transmission state for the signal light 16, resulting in output light. 18 intensities can be switched.
（発明が解決しようとする問題点）
以上に述べた構造には、ファブリ・ペロ共振器の共振特
性を利用して光によるスイッチングを行っているから信
号光の波長をファブリ・ペロ共振器の共振特性に精密に
合せなければならないという問題点がある。本発明の目
的は、このような問題点を除去し、用いることのできる
光の波長範囲の大きな固型光ゲートを提供することにあ
る。(Problems to be Solved by the Invention) The structure described above uses the resonance characteristics of the Fabry-Perot resonator to perform optical switching, so the wavelength of the signal light is The problem is that it must be precisely matched to the characteristics. An object of the present invention is to eliminate such problems and provide a solid optical gate that can be used in a wide wavelength range of light.
（問題点を解決するための手段）
前述の問題点を解決するために本発明が提供する光論理
素子は、量子井戸層上にこの量子井戸層より禁制帯幅が
大きく、屈折率の大きな高屈折率半導体層を積層してな
り、前記高屈折率半導体層には、信号光が入射される面
と、この入射面から入射された前記信号光が前記量子井
戸層と前記高屈折率半導体層との界面で反射されたとき
に出射する面とが設けてあり、前記入射面および出射面
は前記界面に対して鋭角をなしていることを特徴とする
。(Means for Solving the Problems) In order to solve the above-mentioned problems, the optical logic element provided by the present invention has a high-density layer on the quantum well layer, which has a larger forbidden band width than the quantum well layer and has a large refractive index. The high refractive index semiconductor layer has a surface onto which signal light is incident, and the signal light incident from this incident surface is formed by stacking refractive index semiconductor layers on the quantum well layer and the high refractive index semiconductor layer. A surface from which light is emitted when reflected at an interface with the light beam is provided, and the incident surface and the light exit surface form an acute angle with respect to the interface.
（作用）
量子井戸層面に対して垂直方向の電場ベクトルを持つ光
（ｐ偏光）が信号光として入射する。制御光がないとき
、高屈折率半導体層と量子井戸層との界面での信号光の
反射率は小さい。−実制御光が入射すると量子井戸層の
信号光に対する屈折率が減少する。この時、信号光の進
行方向は量子井戸層との界面に対しほぼ臨界角となるか
ら、信号光は全反射する。本発明は、界面での屈折率変
化による反射率の変化を利用し、ファブリ・ペロ共振器
の共振特性を利用していない。そこで、本発明の光論理
素子が用いることのできる光の波長範囲は前述の第２図
の光ゲートより大きい。(Operation) Light (p-polarized light) having an electric field vector perpendicular to the plane of the quantum well layer enters as signal light. When there is no control light, the reflectance of the signal light at the interface between the high refractive index semiconductor layer and the quantum well layer is small. - When the actual control light is incident, the refractive index of the quantum well layer with respect to the signal light decreases. At this time, since the traveling direction of the signal light is approximately at a critical angle with respect to the interface with the quantum well layer, the signal light is totally reflected. The present invention utilizes a change in reflectance due to a change in refractive index at an interface, and does not utilize the resonance characteristics of a Fabry-Perot resonator. Therefore, the wavelength range of light that can be used by the optical logic element of the present invention is larger than that of the optical gate shown in FIG. 2 described above.
（実施例） 第１図は本発明の一実施例の構成を示す断面図である。(Example) FIG. 1 is a sectional view showing the configuration of an embodiment of the present invention.
この実施例は、ＩｎＰの基板１１と、このＩｎＰ基板１
１の上に厚ｄ １０層ｍのＩｎｏ、５ｓＧａｏ、ａｙＡ
３からなるウェル層１２１と〃さ１５ｎｍのＩｎＰから
なるバリア層１２２とを交互に８０層ずつ積層してなる
量子井戸層１２と、この量子井戸層１２の上に厚さ１０
−に積層してなるＧａＡｓの高屈折率層１３とからなる
。高屈折率！１３は、反応性イオンビームによるエツチ
ングで、頂角が４０″のプリズム状に成形されており、
符号１４の面が入射面、符号工５の面が出射面をなして
いる。信号光１６を入射面１４に垂直に、また制御光１
７は量子井戸層面に垂直にそれぞれ入射する。This embodiment includes an InP substrate 11 and an InP substrate 1.
Ino, 5sGao, ayA with thickness d 10 layer m on top of 1
A quantum well layer 12 is formed by alternately laminating 80 well layers 121 made of InP with a thickness of 15 nm and barrier layers 122 made of InP with a thickness of 15 nm.
- a high refractive index layer 13 of GaAs laminated on the substrate. High refractive index! 13 is formed into a prism shape with an apex angle of 40" by etching with a reactive ion beam,
The surface 14 is the incident surface, and the surface 5 is the exit surface. The signal light 16 is directed perpendicularly to the incident plane 14, and the control light 1
7 are incident perpendicularly to the plane of the quantum well layer.
信号光１６は高屈折率層１３と量子井戸層１２の界面に
対してｐ偏光であり、またそのエネルギーは０、８９５
ＱＶで量子井戸層１２の励起子のエネルギーに相当する
。制御光１７のエネルギーは０．９ｅＶである。制御光
１７の強度が小言い場合、量子井戸層１２の信号光１５
に対する屈折率は３．３３である。高屈折率層１３の信
号光１６に対する屈折率は３．４であるから、高屈折率
層１３と量子井戸層１２の間の界面における反射率は１
％である。制御光１７の強度が６５５Ｗ ／ ｏｎ ”
に達すると量子井戸層１２における励起子吸収の飽和に
より、量子井戸層１２の屈折率が３．２に減少する。こ
のとき、高屈折率［１３と量子井戸層１２の界面の臨界
角は７０″であるから信号光１６は全反射される。以上
のように制御光１７の強度により、出射面１５から出射
する反射光の強度がスイッチングされる。このときの信
号光１６のエネルギーは量子井戸層１２の励起子吸収付
近であればよいから、本実施例ではファブリ・ペロ共振
器において必要だった精密なチューニングは必要でない
。The signal light 16 is p-polarized light with respect to the interface between the high refractive index layer 13 and the quantum well layer 12, and its energy is 0.895
QV corresponds to the energy of excitons in the quantum well layer 12. The energy of the control light 17 is 0.9 eV. When the intensity of the control light 17 is low, the signal light 15 of the quantum well layer 12
Its refractive index is 3.33. Since the refractive index of the high refractive index layer 13 for the signal light 16 is 3.4, the reflectance at the interface between the high refractive index layer 13 and the quantum well layer 12 is 1.
%. The intensity of the control light 17 is 655W/on”
When this reaches, the refractive index of the quantum well layer 12 decreases to 3.2 due to saturation of exciton absorption in the quantum well layer 12. At this time, since the critical angle of the interface between the high refractive index [13 and the quantum well layer 12 is 70'', the signal light 16 is totally reflected.As described above, due to the intensity of the control light 17, it is emitted from the output surface 15 The intensity of the reflected light is switched.The energy of the signal light 16 at this time only needs to be around the exciton absorption of the quantum well layer 12, so in this example, the precise tuning required in the Fabry-Perot resonator is Not necessary.
（発明の効果）
以上に詳述したように、本発明では、量子井戸の屈折率
変化による臨界角の変化を利用するから、用いることの
できる光の波長範囲は従来の光ゲートより大きい。(Effects of the Invention) As detailed above, in the present invention, since the change in the critical angle due to the change in the refractive index of the quantum well is utilized, the usable wavelength range of light is wider than that of the conventional optical gate.
【図面の簡単な説明】
第１図は本発明の一実施例の構成を示す断面図、第２図
は従来例の構成図、第３図はその従来例の透過率特性を
示す図である。
１１・・・基板、１２・・・量子井戸層、１３・・・高
屈折率層、１４・・・入射面、１５・・・出射面、１６
・・・信号光、１７・・・制御光、１２１・・・ウェル
層、１２２・・・バリア層、２１・・・ファブリ・ペロ
共振器、２０１ 、２０２・・・レンズ、２０３・・・
偏光ビームスプリッタ、２０４・・・半波長板、２０５
．２０６・・・鏡、３１は制御光のない場合のファブリ
・ペロ共振器の共振特性線、３２は制御光のある場合の
共振特性線。[BRIEF DESCRIPTION OF THE DRAWINGS] FIG. 1 is a sectional view showing the configuration of an embodiment of the present invention, FIG. 2 is a configuration diagram of a conventional example, and FIG. 3 is a diagram showing transmittance characteristics of the conventional example. . DESCRIPTION OF SYMBOLS 11... Substrate, 12... Quantum well layer, 13... High refractive index layer, 14... Incidence surface, 15... Output surface, 16
... Signal light, 17... Control light, 121... Well layer, 122... Barrier layer, 21... Fabry-Perot resonator, 201, 202... Lens, 203...
Polarizing beam splitter, 204...half-wave plate, 205
．． 206...Mirror, 31 is the resonance characteristic line of the Fabry-Perot resonator in the absence of control light, and 32 is the resonance characteristic line in the presence of control light.
Claims (1)
屈折率の大きな高屈折率半導体層を積層してなり、前記
高屈折率半導体層には、信号光が入射される面と、この
入射面から入射された前記信号光が前記量子井戸層と前
記高屈折率半導体層との界面で反射されたときに出射す
る面とが設けてあり、前記入射面および出射面は前記界
面に対して鋭角をなしていることを特徴とする光論理素
子。On the quantum well layer, the forbidden band width is larger than this quantum well layer.
It is formed by laminating high refractive index semiconductor layers having a large refractive index, and the high refractive index semiconductor layer has a surface on which signal light is incident, and the signal light incident from this incident surface is transmitted to the quantum well layer and the semiconductor layer. 1. An optical logic element comprising: a surface that emits light when reflected at an interface with a high refractive index semiconductor layer; the incident surface and the exit surface form an acute angle with respect to the interface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27114987A JPH01112226A (en) | 1987-10-26 | 1987-10-26 | Optical logic element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27114987A JPH01112226A (en) | 1987-10-26 | 1987-10-26 | Optical logic element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01112226A true JPH01112226A (en) | 1989-04-28 |
Family
ID=17496010
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27114987A Pending JPH01112226A (en) | 1987-10-26 | 1987-10-26 | Optical logic element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01112226A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0359549A (en) * | 1989-07-21 | 1991-03-14 | American Teleph & Telegr Co <Att> | Semiconductor optical processing element and optical processor comprising the same |
| WO2010061736A1 (en) | 2008-11-25 | 2010-06-03 | 日鉱金属株式会社 | Copper foil for printed circuit |
| WO2011078077A1 (en) | 2009-12-24 | 2011-06-30 | Jx日鉱日石金属株式会社 | Surface-treated copper foil |
| WO2011138876A1 (en) | 2010-05-07 | 2011-11-10 | Jx日鉱日石金属株式会社 | Copper foil for printed circuit |
-
1987
- 1987-10-26 JP JP27114987A patent/JPH01112226A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0359549A (en) * | 1989-07-21 | 1991-03-14 | American Teleph & Telegr Co <Att> | Semiconductor optical processing element and optical processor comprising the same |
| WO2010061736A1 (en) | 2008-11-25 | 2010-06-03 | 日鉱金属株式会社 | Copper foil for printed circuit |
| WO2011078077A1 (en) | 2009-12-24 | 2011-06-30 | Jx日鉱日石金属株式会社 | Surface-treated copper foil |
| WO2011138876A1 (en) | 2010-05-07 | 2011-11-10 | Jx日鉱日石金属株式会社 | Copper foil for printed circuit |
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