JPH0110925Y2 - - Google Patents
Info
- Publication number
- JPH0110925Y2 JPH0110925Y2 JP1981144931U JP14493181U JPH0110925Y2 JP H0110925 Y2 JPH0110925 Y2 JP H0110925Y2 JP 1981144931 U JP1981144931 U JP 1981144931U JP 14493181 U JP14493181 U JP 14493181U JP H0110925 Y2 JPH0110925 Y2 JP H0110925Y2
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- mounting part
- processing liquid
- running water
- slope
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000007788 liquid Substances 0.000 claims description 19
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 18
- 239000000758 substrate Substances 0.000 claims description 7
- 238000004381 surface treatment Methods 0.000 claims description 2
- 230000000630 rising effect Effects 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000009194 climbing Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 238000011282 treatment Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Landscapes
- Weting (AREA)
Description
【考案の詳細な説明】
本考案は、半導体ウエハー基板等の一方の面に
処理液を供給してその面を処理すると共に他方の
面が該処理液に侵されないようにした処理装置の
新規な構造に関するものである。[Detailed description of the invention] The present invention is a novel processing device that supplies a processing liquid to one side of a semiconductor wafer substrate, etc., processes that side, and prevents the other side from being attacked by the processing liquid. It's about structure.
半導体装置は一般に、半導体ウエハーの表面に
種々の処理を施こして回路を形成される。その
際、例えば、ウエハー表面への不純物拡散、絶縁
膜成長、Al配線の形成及びカバー用PSG膜（リ
ン・シリケート・ガラス）の形成等を施こした
後、ウエハーの裏面側にAu蒸着を施こす工程が
ある。その場合、Au蒸着を行なう前の前処理と
して、裏面表面の酸化膜等を取り除くために処理
液を裏面に供給する工程がある。 Semiconductor devices generally have circuits formed by performing various treatments on the surface of a semiconductor wafer. At that time, for example, after performing impurity diffusion on the wafer surface, growth of an insulating film, formation of Al wiring, and formation of a PSG film (phosphorus silicate glass) for the cover, Au evaporation is performed on the back side of the wafer. There is a rubbing process. In that case, as a pretreatment before performing Au vapor deposition, there is a step of supplying a processing liquid to the back surface in order to remove an oxide film and the like on the back surface.
この工程では処理液をウエハー裏面にのみ供給
し、表面には供給されないようにする必要があ
る。それは、処理液によりウエハー表面に形成し
た前述のAl配線やPSG膜が侵されたりするから
である。 In this step, it is necessary to supply the processing liquid only to the back surface of the wafer and not to the front surface. This is because the above-mentioned Al wiring and PSG film formed on the wafer surface are attacked by the processing liquid.
従来そのような処理装置として水槽の表面の台
の上にウエハーを載置し、ウエハー表面は水面下
に裏面は水面上に位置せしめて、処理液を供給す
るものがあつた。しかしながらそのような装置で
は処理液がウエハー表面側に供給されるのを十分
防ぐことができず、また作業性も悪いものであつ
た。 Conventionally, such a processing apparatus has one in which a wafer is placed on a stand on the surface of a water tank, the front surface of the wafer is positioned below the water surface, and the back surface is positioned above the water surface, and a processing liquid is supplied to the wafer. However, such an apparatus cannot sufficiently prevent the processing liquid from being supplied to the wafer surface side, and has poor workability.
本考案のウエハー表面処理装置は上記従来の欠
点を除去するもので、その特徴は上面に搭載した
基板を吸着固定し所定の方向に回転される逆円す
い状の搭載部と、該搭載部の上面上に設けられた
処理液供給口と、該搭載部の斜面に流水を供給す
る流水供給口とを有し、該搭載部の斜面の該流水
が供給される部分に該搭載部の回転方向に対し逆
方向に上昇する溝が形成されてなることにある。 The wafer surface processing apparatus of the present invention eliminates the above-mentioned drawbacks of the conventional technology, and its features include an inverted conical mounting section that fixes the substrate mounted on the upper surface by suction and rotates in a predetermined direction, and the upper surface of the mounting section. It has a processing liquid supply port provided above and a running water supply port that supplies running water to the slope of the mounting part, and a part of the slope of the mounting part to which the running water is supplied is provided with a processing liquid supply port provided on the slope of the mounting part in the rotational direction of the mounting part. In contrast, grooves are formed that rise in the opposite direction.
以下本考案の一実施例を図面に従つて詳述す
る。 An embodiment of the present invention will be described below in detail with reference to the drawings.
図面は本実施例の基板表面処理装置の概略構造
図である。１は半導体ウエハー基板で、素子が形
成されている面を下にして搭載部２の上面３に搭
載されている。搭載部２は逆円すい形をなし、中
央部にウエハー１を真空吸着するための孔４が形
成され、矢印５の如く真空ポンプ等により吸引さ
れる。６はウエハー１の表面にエツチング等の処
理を施こすための処理液を供給する処理液供給口
である。 The drawing is a schematic structural diagram of the substrate surface treatment apparatus of this embodiment. Reference numeral 1 denotes a semiconductor wafer substrate, which is mounted on the upper surface 3 of the mounting section 2 with the side on which elements are formed facing down. The mounting portion 2 has an inverted conical shape, and a hole 4 for vacuum suctioning the wafer 1 is formed in the center thereof, and the wafer 1 is suctioned by a vacuum pump or the like as shown by an arrow 5. Reference numeral 6 denotes a processing liquid supply port for supplying processing liquid for performing etching or other processing on the surface of the wafer 1.
搭載部２の上面にウエハー１を吸着固定し矢印
７の如く搭載部２を回転させた状態で、処理液を
上方より滴下する。処理液は遠心力によりウエハ
ー１表面で周囲に向つて均一に拡がる。（一点鎖
線１３）
本実施例ではさらに搭載部２の斜面に流水を供
給する流水口８を設け、点線９の如く流水を供給
している。逆円すい状の搭載部２は回転している
ため、流水は搭載部２の斜面をはい上り、やがて
ウエハー１の下面から外側へ流れる。 The wafer 1 is suctioned and fixed on the upper surface of the mounting section 2, and the processing liquid is dropped from above while the mounting section 2 is rotated as shown by arrow 7. The processing liquid spreads uniformly toward the periphery on the surface of the wafer 1 due to centrifugal force. (One-dot chain line 13) In this embodiment, a water outlet 8 for supplying running water is further provided on the slope of the mounting portion 2, and the running water is supplied as shown by a dotted line 9. Since the inverted cone-shaped mounting section 2 is rotating, the running water crawls up the slope of the mounting section 2 and eventually flows outward from the lower surface of the wafer 1.
この流水９により処理液１３がウエハー１の下
面に回り込むのが防止される。（図中１１）
本実施例では、流水９のはい上りを良くするた
めに、搭載部２の斜面に、回転方向７に対し逆方
向に上昇する溝１０を形成している。さらに１２
は処理水１３や流水９の散乱を防ぐためのシール
ド板である。 This flowing water 9 prevents the processing liquid 13 from going around to the lower surface of the wafer 1. (11 in the figure) In this embodiment, in order to improve the climbing of the flowing water 9, a groove 10 that rises in the opposite direction to the rotation direction 7 is formed on the slope of the mounting portion 2. 12 more
is a shield plate for preventing the treated water 13 and running water 9 from scattering.
以上説明したように本考案によれば、ウエハー
の一方の面にのみ処理液を供給することができ
る。またウエハーを回転しつつ処理液を供給する
のでウエハー面に均一に処理液を供給することが
でき、均一な処理が可能である。 As explained above, according to the present invention, the processing liquid can be supplied only to one side of the wafer. Further, since the processing liquid is supplied while rotating the wafer, the processing liquid can be uniformly supplied to the wafer surface, and uniform processing is possible.
図面は本考案の一実施例を示す装置へ概略構造
図である。
図中、１はウエハー基板、２は搭載部、６は処
理液供給部、８は流水供給部、１０は溝である。
The drawing is a schematic structural diagram of an apparatus showing an embodiment of the present invention. In the figure, 1 is a wafer substrate, 2 is a mounting section, 6 is a processing liquid supply section, 8 is a running water supply section, and 10 is a groove.
Claims (1)
回転される逆円すい状の搭載部と、 該搭載部の上面上に設けられた処理液供給口
と、 該搭載部の斜面に流水を供給する流水供給口と
を有し、 該搭載部の斜面の該流水が供給される部分に該
搭載部の回転方向に対し逆方向に上昇する溝が形
成されてなることを特徴とする基板表面処理装
置。[Scope of Claim for Utility Model Registration] An inverted cone-shaped mounting part that suctions and fixes a substrate mounted on the upper surface and rotates in a predetermined direction; a processing liquid supply port provided on the upper surface of the mounting part; and the mounting part. a running water supply port for supplying running water to a slope of the mounting part, and a groove rising in a direction opposite to the rotational direction of the mounting part is formed in a part of the slope of the mounting part to which the running water is supplied. A substrate surface treatment device characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14493181U JPS5849437U (en) | 1981-09-29 | 1981-09-29 | Substrate surface treatment equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14493181U JPS5849437U (en) | 1981-09-29 | 1981-09-29 | Substrate surface treatment equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5849437U JPS5849437U (en) | 1983-04-04 |
| JPH0110925Y2 true JPH0110925Y2 (en) | 1989-03-29 |
Family
ID=29937879
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14493181U Granted JPS5849437U (en) | 1981-09-29 | 1981-09-29 | Substrate surface treatment equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5849437U (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5042698U (en) * | 1973-08-17 | 1975-04-30 | ||
| JPS55124232A (en) * | 1979-03-20 | 1980-09-25 | Matsushita Electric Ind Co Ltd | Application method of substrate treatment solution and the device therefor |
| JPS5660021A (en) * | 1979-10-19 | 1981-05-23 | Fujitsu Ltd | Etching for semiconductor device |
-
1981
- 1981-09-29 JP JP14493181U patent/JPS5849437U/en active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5042698U (en) * | 1973-08-17 | 1975-04-30 | ||
| JPS55124232A (en) * | 1979-03-20 | 1980-09-25 | Matsushita Electric Ind Co Ltd | Application method of substrate treatment solution and the device therefor |
| JPS5660021A (en) * | 1979-10-19 | 1981-05-23 | Fujitsu Ltd | Etching for semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5849437U (en) | 1983-04-04 |
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